JPH01290222A - Semiconductor vapor growth method - Google Patents

Semiconductor vapor growth method

Info

Publication number
JPH01290222A
JPH01290222A JP12087588A JP12087588A JPH01290222A JP H01290222 A JPH01290222 A JP H01290222A JP 12087588 A JP12087588 A JP 12087588A JP 12087588 A JP12087588 A JP 12087588A JP H01290222 A JPH01290222 A JP H01290222A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
raw material
compound semiconductor
material gas
substance
alkylated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12087588A
Inventor
Koji Mochizuki
Nobuyuki Otsuka
Masashi Ozeki
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Abstract

PURPOSE: To execute epitaxy of an atomic layer of a compound semiconductor at a low temperature by a method wherein a raw material gas containing a specific alkylated substance and a raw material gas of another element constituting the compound semiconductor are supplied alternately to a growth apparatus.
CONSTITUTION: An alkylated substance of at least one element constituting a compound semiconductor is expressed by a formula (C4H9)nH3-nM (where M represents a metal element and n is 1 to 3); a raw material gas containing this alkylated substance and a raw material gas of another element constituting the compound semiconductor are supplied alternately to a growth apparatus. That is to say, while the gases flow continuously at a definite flow rate from individual supply sources, they are switched by means of valves 5, 5' and supplied to a reaction tube 1. By this setup, epitaxy of an atomic layer is executed at a substrate temperature; which is by several tens of °C lower than a conventional temperature; epitaxial growth having a steep heterointerface can be executed.
COPYRIGHT: (C)1989,JPO&Japio
JP12087588A 1988-05-18 1988-05-18 Semiconductor vapor growth method Pending JPH01290222A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12087588A JPH01290222A (en) 1988-05-18 1988-05-18 Semiconductor vapor growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12087588A JPH01290222A (en) 1988-05-18 1988-05-18 Semiconductor vapor growth method

Publications (1)

Publication Number Publication Date
JPH01290222A true true JPH01290222A (en) 1989-11-22

Family

ID=14797119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12087588A Pending JPH01290222A (en) 1988-05-18 1988-05-18 Semiconductor vapor growth method

Country Status (1)

Country Link
JP (1) JPH01290222A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7732325B2 (en) 2002-01-26 2010-06-08 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US7781326B2 (en) 2001-02-02 2010-08-24 Applied Materials, Inc. Formation of a tantalum-nitride layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781326B2 (en) 2001-02-02 2010-08-24 Applied Materials, Inc. Formation of a tantalum-nitride layer
US7732325B2 (en) 2002-01-26 2010-06-08 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers

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