JPH01287482A - Semiconductor device measurement system - Google Patents
Semiconductor device measurement systemInfo
- Publication number
- JPH01287482A JPH01287482A JP63117369A JP11736988A JPH01287482A JP H01287482 A JPH01287482 A JP H01287482A JP 63117369 A JP63117369 A JP 63117369A JP 11736988 A JP11736988 A JP 11736988A JP H01287482 A JPH01287482 A JP H01287482A
- Authority
- JP
- Japan
- Prior art keywords
- signal
- electrical
- semiconductor device
- optical
- electric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000005259 measurement Methods 0.000 title claims abstract description 30
- 238000012360 testing method Methods 0.000 claims abstract description 39
- 230000003287 optical effect Effects 0.000 claims description 29
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000008054 signal transmission Effects 0.000 claims description 3
- 239000000523 sample Substances 0.000 abstract description 10
- 239000013307 optical fiber Substances 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、光入力により半導体装置のテストを行うこ
とができる半導体装置測定システムに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor device measurement system that can test semiconductor devices by inputting light.
第３図は高周波ウェハテストを行うための従来から用い
られている半導体ｉ＊ｍ定システムを示す構成図である
。図において、１はウェハ内の測定チップ、２は信号を
発生したり受信したり、データ処理を行う電気特性試験
装置である。FIG. 3 is a block diagram showing a conventional semiconductor i*m determination system for performing high frequency wafer testing. In the figure, reference numeral 1 indicates a measurement chip within the wafer, and reference numeral 2 indicates an electrical property testing device that generates and receives signals and processes data.
高周波プローブ針３は、電気特性試験装Ｍ２から高周波
信号線４を介して与えられた高周波信号を測定チップ１
上のテスト用コンタクト部１ａに伝える。The high-frequency probe needle 3 transmits a high-frequency signal given from the electrical property tester M2 via the high-frequency signal line 4 to the measuring chip 1.
This is transmitted to the upper test contact section 1a.
プローブ針５は、高周波信号が与えられることにより測
定チップ１内の諸回路から発生される電気信号を電気特
性試験装Ｈ２に信号線６を介し伝達する。The probe needle 5 transmits electrical signals generated from various circuits in the measurement chip 1 to the electrical property testing device H2 via the signal line 6 when a high frequency signal is applied.
次に動作について説明する。電気特性試験装置２により
発生された高周波信号は、高周波信号線４及び高周波プ
ローブ針３を介し測定チップ１上のテスト用コンタクト
部１ａに与えられる。Next, the operation will be explained. The high frequency signal generated by the electrical property testing device 2 is applied to the test contact portion 1a on the measurement chip 1 via the high frequency signal line 4 and the high frequency probe needle 3.
そして、高周波信号が測定チップ１内の諸回路に入力さ
れ、諸回路は、高周波信号に応じた電気信号を出力する
。この諸回路により出力された電気信号はプローブ針５
及び信号線６を介し電気特性試験装置２に入力される。Then, the high frequency signal is input to various circuits within the measurement chip 1, and the various circuits output electrical signals according to the high frequency signal. The electrical signals output by these circuits are transmitted to the probe needle 5.
and is input to the electrical property testing device 2 via the signal line 6.
そして、電気特性試験装置２は、この電気信号により測
定チップ１の緒特性を測定する
〔発明が解決しようとする課題〕
従来の半導体装置測定システムは以上のように構成され
、高周波信号は高周波プローブ針５を介し、測定チップ
１上のテスト用コンタクト部１ａに与えられているので
、高周波プローブ針５と測定チップ１との間に発生する
コンタクト抵抗、高周波信号線４及び高周波プローブ針
５が有する容量等により高周波成分が減衰したり、また
高周波プローブ針３とテスト用コンタクト部１ａの接点
を介しノイズを受けやすいため測定チップ１の試験を高
精度に行うのが困難であるという問題点があった。Then, the electrical property testing device 2 measures the electrical properties of the measurement chip 1 using this electrical signal. [Problem to be Solved by the Invention] The conventional semiconductor device measurement system is configured as described above, and the high frequency signal is transmitted to the high frequency probe. Since the contact resistance is applied to the test contact portion 1a on the measurement chip 1 through the needle 5, the contact resistance generated between the high frequency probe needle 5 and the measurement chip 1, and the high frequency signal line 4 and the high frequency probe needle 5 have There are problems in that it is difficult to test the measurement chip 1 with high precision because the high frequency component is attenuated due to capacitance etc. and it is susceptible to noise through the contact between the high frequency probe needle 3 and the test contact part 1a. Ta.
この発明は上記のような問題点を解決するためになされ
たもので、半導体装置の試験を高精度に行うことができ
る半導体装置測定システムを得ることを目的とする。The present invention was made to solve the above-mentioned problems, and an object of the present invention is to obtain a semiconductor device measurement system that can test semiconductor devices with high accuracy.
この発明に係る半導体装置測定システムは、半導体装置
の緒特性を測定する半導体装置測定システムであって、
前記半導体装置にテスト用信号としての電気信号を与え
るとともに、前記電気信号に応答し前記半導体装置より
生じる信号を感知し、前記半導体装置の緒特性を測定す
る電気特性試験装置と、前記電気信号が入力され、前記
電気信号を光信号に変換する電気−光変換手段と、前記
電気−光変換手段からの光信号を前記半導体装置に照射
する光照射手段と、前記光照射手段に、前記電気−９光
変換手段からの光信号を伝達する光信号伝達手段と、前
記半導体装置内の所定の場所に設けられ、前記光照射手
段からの光信号を電気信号に変換する光−電気変換手段
とを備え、前記電気特性試験装置からの電気信号を光信
号に変換し、前記光−電気変換手段に与えることにより
生じる電気信号を前記電気特性試験装置により感知し、
前記半導体装置の試験を行なうことができるよう構成し
ている。A semiconductor device measurement system according to the present invention is a semiconductor device measurement system that measures the characteristics of a semiconductor device, and includes:
an electrical property testing device that applies an electrical signal as a test signal to the semiconductor device, senses a signal generated by the semiconductor device in response to the electrical signal, and measures the physical characteristics of the semiconductor device; an electric-to-optical conversion means for converting the electric signal into an optical signal; a light irradiation means for irradiating the semiconductor device with the optical signal from the electric-to-optical conversion means; 9 optical signal transmission means for transmitting the optical signal from the optical conversion means; and optical-to-electrical conversion means provided at a predetermined location within the semiconductor device and for converting the optical signal from the light irradiation means into an electrical signal. comprising: converting the electrical signal from the electrical property testing device into an optical signal, and sensing the electrical signal generated by applying it to the optical-to-electrical conversion means with the electrical property testing device;
The configuration is such that the semiconductor device can be tested.
この発明における電気−光変換手段は、電気特性試験装
置からの電気信号を光信号に変換し、光信号伝達手段は
光信号を光照射手段に伝達し、光照射手段は光信号を半
導体装置上の光−電気変換手段に照射する。光−電気変
換手段は光信号を電気信号に変換し、半導体装置内の諸
回路に伝達し、電気特性試験装置は、半導体装置内の諸
回路からの出力を受は半導体装置の緒特性を測定する。The electrical-to-optical conversion means in this invention converts the electrical signal from the electrical property testing device into an optical signal, the optical signal transmission means transmits the optical signal to the light irradiation means, and the light irradiation means transmits the optical signal onto the semiconductor device. irradiate the light-to-electrical conversion means of. The optical-to-electrical conversion means converts the optical signal into an electrical signal and transmits it to various circuits within the semiconductor device, and the electrical characteristic testing device receives outputs from the various circuits within the semiconductor device and measures the electrical characteristics of the semiconductor device. do.
（実施例） 第１図は、この発明の一実施例を示す構成図である。(Example) FIG. 1 is a block diagram showing an embodiment of the present invention.
図において、第１図に示した従来の半導体装置測定シス
テムとの相違点は、測定チップ１内に従来のテスト用コ
ンタクト１１ａの代りにフォトダイオードＰＤを設けた
こと、高周波プローブ針３をなくし、新たに電気信号を
光信号に変換する電気−光変換器（以下ｒＥ１０変換器
」という。）７、Ｅ１０変換器７の出力を伝達する光フ
ァイバー８、光ファイバー８を介して入力される光信号
を集光するコリメータレンズ９を設けたことである。In the figure, the differences from the conventional semiconductor device measurement system shown in FIG. An electric-to-optical converter (hereinafter referred to as rE10 converter) 7 that converts electrical signals into optical signals, an optical fiber 8 that transmits the output of the E10 converter 7, and an optical fiber that collects the optical signals input through the optical fiber 8. This is because a collimator lens 9 that emits light is provided.
次に動作について説明する。Ｅ１０変換器７は、電気特
性試験装置２からの高周波信号を光信号に変換し、光フ
ァイバー８を介しコリメータレンズ９に伝達する。コリ
メータレンズ９は、第２図に示すように光信号を集光し
、測定チップ１内のフォトダイオードＰＤに光を照射す
る。そして、フォトダイオードＰＤはコリメータレンズ
８からの光信号を電気信号に変換し測定チップ１内の諸
回路に伝達する。そして、測定チップ１内の開回路は入
力される電気信号に応じた電気信号を発生し、この信号
がプローブ針５．信号線６を介し電気特性試験装置２に
入力される。電気特性試験装置２はこの信号により測定
チップ１の測定結果を出力する。Next, the operation will be explained. The E10 converter 7 converts the high frequency signal from the electrical property testing device 2 into an optical signal and transmits it to the collimator lens 9 via the optical fiber 8. The collimator lens 9 condenses the optical signal as shown in FIG. 2, and irradiates the photodiode PD within the measurement chip 1 with the light. The photodiode PD converts the optical signal from the collimator lens 8 into an electrical signal and transmits it to various circuits within the measurement chip 1. Then, the open circuit inside the measurement chip 1 generates an electric signal corresponding to the input electric signal, and this signal is transmitted to the probe needle 5. The signal is input to the electrical property testing device 2 via the signal line 6. The electrical property testing device 2 outputs the measurement results of the measurement chip 1 based on this signal.
なお、上記実施例ではテスト用信号に高周波信号を用い
た場合について説明したが、微少電流等のようにノイズ
等の外乱による影響が大きい信号をテスト用信号に用い
た場合についても同様の効果を奏する。Note that although the above embodiment describes the case where a high frequency signal is used as the test signal, the same effect can be obtained when the test signal is a signal such as a minute current that is greatly affected by disturbances such as noise. play.
また、上記実施例では、従来のテスト用コンタクト部１
ａの代りにフォトダイオードＰＤを用いたが、フォトダ
イオードＰＤにその他の光１１０回路及び光信号処理回
路を付加することにより、より安定して測定チップ１の
試験を行うことができる。Furthermore, in the above embodiment, the conventional test contact section 1
Although a photodiode PD was used in place of a, the measurement chip 1 can be tested more stably by adding other optical 110 circuits and optical signal processing circuits to the photodiode PD.
さらに、フォトダイオードＰＤは、測定チップ１上の必
要部分に任意に付加できるため、部分的な回路テストも
できる。Furthermore, since the photodiode PD can be added to any necessary part on the measurement chip 1, a partial circuit test can be performed.
以上のようにこの発明によれば、電気信号を光信号に変
換する電気−光変換手段、前記電気−光変換手段からの
光信号を被測定半導体装置に照射する光照射手段及び前
記電気−光変換手段からの光信号を前記光照射手段に伝
達する光伝達手段を設けるとともに、半導体装置内の所
定の場所に光−電気変換手段を設けたので、従来のよう
に被測定半導体装置にテスト用信号を与える場合にコン
タクト抵抗が生じることなく、ノイズ等の外乱の影響を
少なくすることができ、半導体装置の試験を高精度に行
なうことができるという効果がある。As described above, according to the present invention, there is provided an electro-optical conversion means for converting an electrical signal into an optical signal, a light irradiation means for irradiating an optical signal from the electrical-optical conversion means onto a semiconductor device to be measured, and the electro-optical In addition to providing an optical transmission means for transmitting the optical signal from the conversion means to the light irradiation means, an optical-to-electrical conversion means is also provided at a predetermined location within the semiconductor device, so that the semiconductor device under test can be used for testing as in the conventional method. When applying a signal, there is no contact resistance, the influence of disturbances such as noise can be reduced, and semiconductor devices can be tested with high precision.
第１図はこの発明の一実施例を示す構成図、第２図は光
伝達部分の拡大図、第３図は従来の半導体装置測定シス
テムを示す構成図である。
図において、２は電気特性試験装置、７は電気−光変換
器、８は光ファイバー、９はコリメータレンズ、ＰＤは
フォトダイオードである。
なお、各図中同一符号は同一または相当部分を示す。FIG. 1 is a block diagram showing an embodiment of the present invention, FIG. 2 is an enlarged view of a light transmission section, and FIG. 3 is a block diagram showing a conventional semiconductor device measurement system. In the figure, 2 is an electrical property testing device, 7 is an electric-optical converter, 8 is an optical fiber, 9 is a collimator lens, and PD is a photodiode. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
ステムであって、 前記半導体装置にテスト用信号としての電気信号を与え
るとともに、前記電気信号に応答し前記半導体装置より
生じる信号を感知し、前記半導体装置の諸特性を測定す
る電気特性試験装置と、前記電気信号が入力され、前記
電気信号を光信号に変換する電気−光変換手段と、 前記電気−光変換手段からの光信号を前記半導体装置に
照射する光照射手段と、 前記光照射手段に、前記電気−光変換手段からの光信号
を伝達する光信号伝達手段と、 前記半導体装置内の所定の場所に設けられ、前記光照射
手段からの光信号を電気信号に変換する光−電気変換手
段とを備え、 前記電気特性試験装置からの電気信号を光信号に変換し
、前記光−電気変換手段に与えることにより生じる電気
信号を前記電気特性試験装置により感知し、前記半導体
装置の試験を行なうことを特徴とする半導体装置測定シ
ステム。(1) A semiconductor device measurement system for measuring various characteristics of a semiconductor device, which applies an electric signal as a test signal to the semiconductor device and senses a signal generated by the semiconductor device in response to the electric signal; an electrical property testing device for measuring various characteristics of the semiconductor device; an electrical-to-optical converter to which the electrical signal is input and converts the electrical signal into an optical signal; a light irradiation means for irradiating a semiconductor device; an optical signal transmission means for transmitting an optical signal from the electrical-to-optical conversion means to the light irradiation means; an optical-to-electrical converting means for converting an optical signal from the means into an electrical signal, converting an electrical signal from the electrical characteristic testing device into an optical signal, and converting the electrical signal generated by supplying the optical signal to the optical-to-electrical converting means. A semiconductor device measurement system, characterized in that the semiconductor device is tested by sensing with the electrical property testing device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63117369A JPH01287482A (en) | 1988-05-13 | 1988-05-13 | Semiconductor device measurement system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63117369A JPH01287482A (en) | 1988-05-13 | 1988-05-13 | Semiconductor device measurement system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01287482A true JPH01287482A (en) | 1989-11-20 |
Family
ID=14709956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63117369A Pending JPH01287482A (en) | 1988-05-13 | 1988-05-13 | Semiconductor device measurement system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01287482A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007013386A1 (en) * | 2005-07-26 | 2007-02-01 | Matsushita Electric Industrial Co., Ltd. | Method for inspecting semiconductor device, semiconductor device, semiconductor integrated circuit, method and equipment for testing semiconductor integrated circuit |
| JP2007266345A (en) * | 2006-03-29 | 2007-10-11 | Kawasaki Microelectronics Kk | Test method of semiconductor device, and probe card and semiconductor device used for test method |
| JP2011242216A (en) * | 2010-05-17 | 2011-12-01 | Advantest Corp | Testing device, testing method, and device interface |
| TWI448704B (en) * | 2011-10-12 | 2014-08-11 | Advantest Corp | Test device, test method and device interface |
| EP3660563A1 (en) * | 2018-11-30 | 2020-06-03 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Integrated photonic circuit test |
-
1988
- 1988-05-13 JP JP63117369A patent/JPH01287482A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007013386A1 (en) * | 2005-07-26 | 2007-02-01 | Matsushita Electric Industrial Co., Ltd. | Method for inspecting semiconductor device, semiconductor device, semiconductor integrated circuit, method and equipment for testing semiconductor integrated circuit |
| JP2007266345A (en) * | 2006-03-29 | 2007-10-11 | Kawasaki Microelectronics Kk | Test method of semiconductor device, and probe card and semiconductor device used for test method |
| JP2011242216A (en) * | 2010-05-17 | 2011-12-01 | Advantest Corp | Testing device, testing method, and device interface |
| TWI448704B (en) * | 2011-10-12 | 2014-08-11 | Advantest Corp | Test device, test method and device interface |
| EP3660563A1 (en) * | 2018-11-30 | 2020-06-03 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Integrated photonic circuit test |
| FR3089344A1 (en) * | 2018-11-30 | 2020-06-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Integrated photonic circuit test |
| US11131710B2 (en) | 2018-11-30 | 2021-09-28 | Commissariat à l'énergie atomique et aux énergies alternatives | Integrated photonic test circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1132374A (en) | System for measuring optical waveguide fiber diameter | |
| Vallan et al. | Displacement and acceleration measurements in vibration tests using a fiber optic sensor | |
| WO2011079664A1 (en) | System and method for detecting magneto-optic with optical fiber | |
| US9618563B2 (en) | Semiconductor device inspection device and semiconductor device inspection method | |
| CN104898037A (en) | Test apparatus, calibration device, calibration method and test method | |
| US8773119B2 (en) | System for fiber DC magneto-optic detection and method thereof | |
| KR102207008B1 (en) | Apparatus for frequency analyzing a measurement target and method of frequency analyzing a measurement target | |
| RU2553831C1 (en) | Automated system for testing electronic components for radiation resistance | |
| JPH01287482A (en) | Semiconductor device measurement system | |
| US6690454B2 (en) | Method, apparatus and system for testing one or more waveguides of an optical device | |
| CN108337044B (en) | High-sensitivity optical cable census device and method based on white light interference | |
| KR100913490B1 (en) | Apparatus for inspecting electrical condition of image sensor | |
| KR102535830B1 (en) | A system for testing optical converter | |
| CN117233457B (en) | Method and equipment for testing high-speed modulation current of laser | |
| US20230358637A1 (en) | Apparatuses and methods for analyzing multiple optical signals in parallel | |
| KR102146983B1 (en) | Apparatus for Probing Optical Device | |
| JPS63133068A (en) | Apparatus for detecting voltage of circuit | |
| JP2002009327A (en) | Photosensitive ic frequency characteristic screening apparatus and photosensitive ic frequency characteristic screening method | |
| JPH0540133A (en) | Signal-waveform measuring apparatus | |
| JPH0787211B2 (en) | Integrated circuit test equipment | |
| WO2019230147A1 (en) | Optical difference detector and inspection device | |
| JP2837933B2 (en) | Signal waveform detector | |
| CN116907561A (en) | Pulse responsiveness test method and device for photoelectric detector | |
| RU2077754C1 (en) | Method and device for detection of physical characteristics of semiconductor plate | |
| SU1700510A1 (en) | Medium transparency determining method |