JPH01286938A - Metallizing composition for substrate having low thermal expansion - Google Patents
Metallizing composition for substrate having low thermal expansionInfo
- Publication number
- JPH01286938A JPH01286938A JP63113615A JP11361588A JPH01286938A JP H01286938 A JPH01286938 A JP H01286938A JP 63113615 A JP63113615 A JP 63113615A JP 11361588 A JP11361588 A JP 11361588A JP H01286938 A JPH01286938 A JP H01286938A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- weight
- parts
- substrate
- thermal expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 title abstract description 18
- 239000000843 powder Substances 0.000 claims abstract description 43
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 238000001465 metallisation Methods 0.000 claims description 19
- 239000011521 glass Substances 0.000 abstract description 13
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract description 4
- 238000013329 compounding Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 description 21
- 238000005219 brazing Methods 0.000 description 15
- 239000000919 ceramic Substances 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 g-row is used Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Glass Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は結晶化ガラス、アルミナ−ガラス複合体、Ｓｉ
Ｃ，ＳｉＪ＋、 Ａ Ｉ Ｎなど熱膨張係数α＝５．
０×１０−ｂ／℃以下の低熱膨張係数の材料を基板材料
としたＩＣ搭載用多層基板、パッケージなどにおいて用
いられるメタライズ組成物に関する。Detailed Description of the Invention (Industrial Application Field) The present invention relates to crystallized glass, alumina-glass composite, Si
C, SiJ+, A I N, etc. Thermal expansion coefficient α=5.
The present invention relates to a metallizing composition used in multilayer substrates for mounting ICs, packages, etc., in which the substrate material is a material with a low coefficient of thermal expansion of 0x10-b/°C or less.
（従来の技術）
近年電子機器の小形化等の進展に伴ない、回路基板上の
半導体素子（ＩＣ等）の実装密度が高くなってきており
、更にパワー半導体等の搭載などを考えると回路基板上
での発熱量は一層大きくなってきている。(Prior art) In recent years, with the progress of miniaturization of electronic devices, the packaging density of semiconductor elements (IC, etc.) on circuit boards has become higher, and when considering the mounting of power semiconductors, etc. The amount of heat generated at the top is increasing.
このため基板材料としても熱膨張係数α＝５．０ＸＩＯ
−６／を以下（室温〜４００℃）のものが使用されてお
り出願人の特願昭５７−２０００２０号にはＳｉＯ□。Therefore, as a substrate material, the thermal expansion coefficient α=5.0XIO
-6/ or less (room temperature to 400°C) is used, and the applicant's Japanese Patent Application No. 57-200020 describes SiO□.
Ａ １２０．、 ＭｇＯ，ＺｒＯ，からなる主成分にＢ
２Ｏ３及び／又はＰ２Ｏ３を添加して結晶化ガラス成分
を粉砕してフリット化し成形後再度結晶化させたものが
、特開昭５９−８３９５７号にはＳｉＯ□、 八β２０
３９Ｍｇ０． Ｂｚ０３゜Ｃａｂ、 ＺｒＯ，からなる
結晶化ガラス成分を粉砕してフリット化し成形後再度結
晶化したものが、特開昭５９−１３７３４１号公報には
Ｓｉｎ、、 Ａ ｌ 、０．、 Ｙ、Ｏ，。A 120. , B is the main component consisting of MgO, ZrO,
JP-A No. 59-83957 discloses SiO□, 8β20, which is obtained by adding 2O3 and/or P2O3, crushing the crystallized glass component, making it into a frit, and crystallizing it again after molding.
39Mg0. JP-A-59-137341 discloses a crystallized glass component consisting of Bz03°Cab, ZrO, which is crushed into a frit, molded, and then crystallized again. , Y, O,.
ＭｇＯからなる主成分にＢ２Ｏ３及び／又はＰ２Ｏ，を
添加した結晶化ガラス成分を粉砕してフリット化し、成
形後再度焼成結晶化させたものが、特開昭５９−６４５
４５号公報には熱膨張係数５〜４．５ Ｘｌ０−６の結
晶化ガラスの表面にＳｉＯ□被膜を持たせたセラミック
粒子を５〜６０容量％分散させたガラス−セラミック複
合体などがあげられている。A crystallized glass component containing B2O3 and/or P2O added to the main component consisting of MgO is pulverized into a frit, molded and fired again to crystallize it, as disclosed in JP-A-59-645.
Publication No. 45 mentions a glass-ceramic composite in which 5 to 60% by volume of ceramic particles having a SiO□ film are dispersed on the surface of crystallized glass with a coefficient of thermal expansion of 5 to 4.5 Xl0-6. ing.
又、その他の材料としては、ＳｔＣ＋ ５ｉＪｔ＋ Ａ
ＩＮ等があげられる。In addition, other materials include StC+ 5iJt+ A
Examples include IN.
このような低熱膨張率の多層基板、パッケージには通常
へＵメタライズを使用し、このメタライズ上にＡｕ／Ｓ
ｎおよびＡｕ／Ｓｉのロー材およびＩｎ／Ｐｂ等の半田
を利用して金具の接合を行なっていた。U metallization is usually used for such multilayer substrates and packages with low coefficient of thermal expansion, and Au/S is applied on top of this metallization.
Metal fittings have been joined using brazing materials such as n and Au/Si and solders such as In/Pb.
特に結晶化ガラスは焼成温度が９００℃〜１０００℃で
あるために、従来のアルミナパッケージのメタライズ材
料として利用されているＷ、 Ｍｏは使用することがで
きない。In particular, since the firing temperature of crystallized glass is 900° C. to 1000° C., W and Mo, which are conventionally used as metallizing materials for alumina packages, cannot be used.
（発明が解決しようとする課題）
上記のようなロー材および半田を利用した金具の接合方
法では、ＩＣチップの接合時（グイマウント時）に再び
加熱されてロー材の軟化が生じるため、作業性と信頼性
に問題があった。そこでさらに高温のロー材（例えば純
Ａｇロー）を使用して金具を接合する必要が生じるが、
基板のメタライズもこれに対応できるものでなければな
らない。(Problems to be Solved by the Invention) In the method of joining metal fittings using brazing material and solder as described above, the brazing material is heated again when IC chips are bonded (during mounting), and the brazing material becomes softened. There were problems with quality and reliability. Therefore, it becomes necessary to use even higher temperature brazing material (for example, pure Ag brazing material) to join the metal fittings.
The metallization of the substrate must also be compatible with this.
従来の基板等に用いられているＡｕメタライズは、純Ａ
ｇローの如き高温ロー材を使用すると、Ａｕと軟化した
ロー材とが合金化する。そのためセラミック表面にメタ
ライズされたＡｕがロー材中に拡散して接着強度が低下
し、好ましい値に維持できなくなり、ロー材喰われ現象
を呈する問題がある。The Au metallization used in conventional substrates is pure A.
When a high-temperature brazing material such as g-row is used, Au and the softened brazing material become alloyed. Therefore, the Au metallized on the ceramic surface diffuses into the brazing material, lowering the adhesive strength, making it impossible to maintain it at a desirable value, and causing the problem of the brazing material being eaten away.
その対策として我々は先に特願昭６２−４７４３９号（
Ｐｄメタライズ組成物）及び特願昭６２−−４７４４０
号（Ｐｔメタライズ組成物）を生み出した。As a countermeasure, we first applied for patent application No. 62-47439 (
Pd metallized composition) and patent application No. 62-47440
(Pt metallized composition).
しかしながら貴金属であるＰｄやｐｔを主材とするので
依然高価であることは避けられず、貴金属を用いなくて
もＰｄ、 Ｐｔを主材とする組成物と同様な接着強度を
持ち、しかも低価格であるメタライズ組成物の出現が待
望されていた。本発明はこのような要求に応えるメタラ
イズ組成物を目的とするものである。However, since the main materials are precious metals such as Pd and PT, they are still expensive. The appearance of a metallized composition has been long awaited. The object of the present invention is to provide a metallizing composition that meets these demands.
（課題を解決するための手段）
本発明は上記の実情に鑑みてなされたもので、その概要
は以下のとおりである。(Means for Solving the Problems) The present invention has been made in view of the above circumstances, and the outline thereof is as follows.
■ Ｆｅ粉末、 Ｆｅ、０３粉末、 Ｎｉ粉末＋ Ｎｉ
Ｏ粉末からなるＦｅ／Ｎｉ系粉末１００重量部に対し低
膨張フリット２〜３０重量部、 Ａｇ粉末５重量部以下
、 ＣｕＯ粉末０．１〜１０重量部よりなる低熱膨張基
板用メタライズ組成物。■ Fe powder, Fe, 03 powder, Ni powder + Ni
A metallizing composition for a low thermal expansion substrate comprising: 2 to 30 parts by weight of a low expansion frit, 5 parts by weight or less of an Ag powder, and 0.1 to 10 parts by weight of a CuO powder, based on 100 parts by weight of a Fe/Ni-based powder consisting of an O powder.
■ Ｆｅ粉末、 Ｆｅ２Ｏ３粉末ｒ Ｎｔ粉末、 Ｎｉ
Ｏ粉末からなるＦｅ／Ｎｉ系粉末１００重量部に対し、
低膨張フリット２〜３０重量部、ＣｕＯ粉末０．１〜１
０重量部よりなる低熱膨張基板用メタライズ組成物。■ Fe powder, Fe2O3 powder Nt powder, Ni
For 100 parts by weight of Fe/Ni powder consisting of O powder,
Low expansion frit 2-30 parts by weight, CuO powder 0.1-1
A metallizing composition for low thermal expansion substrates consisting of 0 parts by weight.
このような組成のメタライズペーストを低膨張セラミッ
クに適用して基板やパッケージを作った場合、高温ロー
材（例えば純Ａｇロー）でリード金具をロー付けしても
ロー材の喰われがなく、接着強度が高いという成果を得
た。When a substrate or package is made by applying a metallizing paste with such a composition to a low-expansion ceramic, even if the lead metal fittings are brazed with high-temperature brazing material (for example, pure Ag brazing material), the brazing material will not be eaten away and the adhesion will be maintained. The result was high strength.
ここにこれを表示すれば第１表のとおりである。This is shown in Table 1 here.
第１表 （作 用） 以下本発明のペーストの組成について詳述する。Table 1 (for production) The composition of the paste of the present invention will be explained in detail below.
Ｆｅ／Ｆｅ２Ｏｔ及びＮｉ／ＮｉＯはＣｕＯとともに必
要な導電性を確保し、かつ高温においても殆ど酸化還元
に影響されず、３体全体としての体積変化率を一層低く
している。Together with CuO, Fe/Fe2Ot and Ni/NiO ensure the necessary conductivity and are hardly affected by redox even at high temperatures, making the volume change rate of the three as a whole even lower.
本発明ではＦｅ／Ｆｅｚｅｓ ＊ Ｎｉ／ＮｉＯの４種
の成分を有することにより焼成工程をバランスよく行な
い体積変化を防ぐものである。即ち大気中７５０℃に仮
焼でのＦｅ、 Ｎｉの酸化による体積膨張をＦｅ２Ｏ３
゜ＮｉＯにより制限し、基板からの剥離を防止する。In the present invention, by having four types of components: Fe/Fezes*Ni/NiO, the firing process can be performed in a well-balanced manner and volume change can be prevented. In other words, the volume expansion due to the oxidation of Fe and Ni during calcination at 750°C in the atmosphere is
゜Limited by NiO to prevent peeling from the substrate.
又、Ｆｅ２Ｏ＝、 ＮｉＯの還元焼成工程での体積収
縮（これのみではポーラスになる）を防止する。Also, Fe2O= prevents the volumetric shrinkage of NiO (which alone would result in porousness) during the reduction firing process.
更に非酸化性雰囲気での焼成でＰｅとＮｉの合金化によ
りち密なメタライズを構成する。Furthermore, by firing in a non-oxidizing atmosphere, a dense metallization is formed by alloying Pe and Ni.
ここに（八）Ｆｅ／Ｆｅ２Ｏ＋ と（Ｂ）Ｎｉ／ＮｉＯ
の好ましい配合比は５／９５≦Ａ／Ｂ≦８０／２０であ
る。Here (8) Fe/Fe2O+ and (B) Ni/NiO
The preferred blending ratio is 5/95≦A/B≦80/20.
しかし、ＦｅとＦｅ２Ｏ３の比率並びにＮｉとＮｉＯの
比率は共に１／２〜２／１とすることによりセラミック
パッケージの仮焼、還元焼成、本焼成をｉｉｌして体積
変化を来さず好ましい。However, it is preferable to set the ratio of Fe to Fe2O3 and the ratio of Ni to NiO to 1/2 to 2/1 so that no volume change occurs during the calcination, reduction sintering, and main sintering of the ceramic package.
結晶化ガラスフリフト（低膨張フリット）はメタライズ
ペーストとセラミック基板又はパッケージの接着性を向
上するために必要でこれが２重量部より少ない場合は接
着強度が低下し過ぎ、３０重量部を超えるとメタライズ
表面にガラスが浮き出して純Ａｇローが濡れず好ましく
ない。Crystallized glass frit (low expansion frit) is necessary to improve the adhesion between the metallization paste and the ceramic substrate or package. If it is less than 2 parts by weight, the adhesive strength will decrease too much, and if it exceeds 30 parts by weight, the metallization will fail. The glass stands out on the surface and the pure Ag raw material does not get wet, which is not preferable.
Ａｇ粉を５重量部以下（場合により０）とする理由はこ
れがないとメタライズの焼結が不完全となり易く、５重
量部を超えるとセラミック表面にＡｇが拡散する問題を
生じる。The reason for setting the Ag powder to 5 parts by weight or less (or 0 in some cases) is that without it, the sintering of the metallization tends to be incomplete, and if it exceeds 5 parts by weight, a problem arises in which Ag diffuses onto the ceramic surface.
ＣｕＯを０．１〜１０重量部としたのは接着強度を保持
し、適当な熱収縮率とするためであり、０．１重量部未
満では接着が不十分となり、逆に１０重量部を超えると
焼成工程で最終的に金属Ｃｕになって、Ｆｅ／Ｎｉ メ
タライズ中にＣｕを多量に含むことになり、後工程の金
属ロー材は時にロー材たるＡｇ金属と合金化し接着強度
の低下を招くので好ましくない。The reason why CuO is set at 0.1 to 10 parts by weight is to maintain adhesive strength and achieve an appropriate heat shrinkage rate; less than 0.1 parts by weight will result in insufficient adhesion, and conversely if it exceeds 10 parts by weight. In the firing process, Cu is finally turned into metal, and the Fe/Ni metallization contains a large amount of Cu, and the metal brazing material in the subsequent process sometimes becomes alloyed with the Ag metal, which is the brazing material, resulting in a decrease in bond strength. So I don't like it.
次にペーストを作るためにはＦｅ／Ｆｅ、０３／Ｎｉ／
Ｎｊ０１００重量部に対し樹脂を３重量部添加する。Next, to make a paste, Fe/Fe, 03/Ni/
Add 3 parts by weight of resin to 100 parts by weight of Nj0.
次にペーストの作り方について述べれば、各粉末を所定
量だけ秤量し、メノウ乳鉢に入れ、メノウ乳棒で約１時
間微粉砕し混合して粉末同志を均質に分散させ、そこへ
予め別にブチルカルピトールとアセトンの混合溶剤に溶
解したエチルセルロース（樹脂）を注入して、乳棒でよ
く掻き混ぜながら、アセトンを揮散させ乾燥すると同時
に樹脂と粉末とを約１時量子分に練り合わせる。Next, to explain how to make the paste, weigh a predetermined amount of each powder, put it in an agate mortar, grind it finely with an agate pestle for about an hour, mix it to homogeneously disperse the powders, and add butyl calpitol separately in advance. Ethyl cellulose (resin) dissolved in a mixed solvent of and acetone is injected, and while stirring well with a pestle, the acetone is evaporated and dried, and at the same time, the resin and powder are kneaded together for about 1 hour.
（実施例）
以下本発明のメタライズ組成物を使用したテストピース
の製造工程の概略を説明する。(Example) The outline of the manufacturing process of a test piece using the metallizing composition of the present invention will be described below.
ｆｌ） 本出願人の出願に係る特開昭５９−９２９４
３号公報記載の発明「結晶化ガラス体」 （前述のＦＣ
−０１である。）に開示された実施例隘５と同様に重量
比でＺｎ０４％、 ＭｇＯ１３％、 Ａｌ２Ｏ３２３％
、 Ｓｉ０□５８％、ＢＪｓ及びＰ２Ｏ，各１％の組成
となるように、Ｚｎ０１ ＭｇＣ０：＋＋ Ａｌ（ＯＨ
）：Ｉ、 ｓｉｏ、、 Ｈ３ＢＯｚ＋ 及び１１．ＰＯ
４を秤量し、ライカイ機にて混合し、アルミナ坩堝を用
いて１４５０℃で溶融せしめた後、水中に投入し、急冷
してガラス化した後、アルミナ製ボールミルにて平均粒
径２μに粉砕してフリットを製造。fl) Japanese Patent Application Laid-Open No. 59-9294 filed by the applicant
Invention “crystallized glass body” described in Publication No. 3 (the above-mentioned FC
-01. ) Zn04%, MgO13%, Al2O3 23% in weight ratio as in Example No. 5 disclosed in
, Zn01 MgC0:++ Al(OH
): I, sio, H3BOz+ and 11. P.O.
4 was weighed, mixed in a Raikai machine, melted at 1450°C in an alumina crucible, poured into water, rapidly cooled and vitrified, and then ground to an average particle size of 2μ in an alumina ball mill. manufacture frits.
（２）上記フリットに有機質バインダーと溶剤を混合し
てスラリー化し、ドクターブレード法によって厚さ０．
６ ｍのグリーンシートを製造。(2) Mix the above frit with an organic binder and a solvent to form a slurry, and use the doctor blade method to form a slurry with a thickness of 0.
Manufactures 6m green sheets.
（３）平均粒径２〜３μｍのＦｅと、平均粒径２〜３ｐ
ｍのＦｅ２Ｏ，、と、平均粒径０．５ μｍのＮｉと、
平均粒径２〜３μｍのＮｉＯと、平均粒径２〜３μｍの
ＣｕＯと、平つ粒径２〜１０μｍのＡｇと平均粒径２〜
４μｍのＣｕＯとをメタライズ組成物として第１表の組
成に混合し、有機質バインダー（エチルセルロースと溶
剤ブチルカルピトール）とを配合してメノウ乳鉢で混合
しメタライズペースト（本発明）を製造。(3) Fe with an average particle size of 2 to 3 μm and an average particle size of 2 to 3 p
m of Fe2O,, and Ni with an average particle size of 0.5 μm,
NiO with an average grain size of 2 to 3 μm, CuO with an average grain size of 2 to 3 μm, Ag with a flat grain size of 2 to 10 μm, and average grain size of 2 to 3 μm.
4 μm of CuO was mixed as a metallization composition according to the composition shown in Table 1, and an organic binder (ethyl cellulose and solvent butyl calpitol) was blended and mixed in an agate mortar to produce a metallization paste (the present invention).
（４） 前記（２）の結晶化ガラスからなるグリーン
シートの表面に、上記（３）のメタライズペーストを用
い、焼成後に一辺１．６ ｎ＋の正方形となるようなパ
ターンをスクリーン印刷。(4) On the surface of the green sheet made of the crystallized glass of (2) above, using the metallizing paste of (3) above, screen print a pattern that will become a square with sides of 1.6 n+ after firing.
（５） スクリーン印刷したグリーンシートを６枚と
ベースとなる肉厚のシート１枚を積層し、熱圧着したの
ち、５０１１×５０１１に切断。(5) Six screen-printed green sheets and one thick base sheet were laminated, heat-pressed and then cut into 5011 x 5011 pieces.
（６）切断した積層体を大気中８時間で７５０℃まで昇
温、加熱し、０．２〜１時間保持。(6) The cut laminate was heated to 750° C. for 8 hours in the atmosphere and held for 0.2 to 1 hour.
（７）次いで積層体を水素雰囲気中に移し、常温より０
．５℃／分の昇温速度で３５０℃まで加熱せしめ、続い
て０．５〜１．５時間保持し、水素雰囲気中又は中性雰
囲気中で９５０℃で焼成。(7) Next, move the laminate into a hydrogen atmosphere and
．． The sample was heated to 350°C at a temperature increase rate of 5°C/min, held for 0.5 to 1.5 hours, and fired at 950°C in a hydrogen atmosphere or a neutral atmosphere.
実施例と比較例の組成と接着強度は第２表に示すとおり
である。The compositions and adhesive strengths of Examples and Comparative Examples are shown in Table 2.
次に第１図に本発明のメタライズ組成物を用いたＰＧＡ
パッケージを示す。図において低温焼成セラミック２を
段状に構成した基板の露出部分に本発明のＦｅ／Ｎｅ系
メタライズ１を施し、各（Ｆ面）にはＣｕメタライズ４
を施し、スルーホール６にはＰｔ／Ｃｕ、Ｐｄ／Ｃｕ、
Ｎｉ、Ｐｔ、Ｐｄ、Ｃｕなどを充填し、かつメタライズ
１の上には純Ａｇロー３を介し４２アロイピン５を設け
である。Next, FIG. 1 shows a PGA using the metallizing composition of the present invention.
Show package. In the figure, the Fe/Ne metallization 1 of the present invention is applied to the exposed part of the substrate in which the low-temperature fired ceramic 2 is structured in steps, and each (F side) has Cu metallization 4.
Pt/Cu, Pd/Cu,
It is filled with Ni, Pt, Pd, Cu, etc., and 42 alloy pins 5 are provided on the metallized layer 1 via a pure Ag row 3.
次に本発明のメタライズを用いた多層基板について気密
性および環境試験を行った。Next, airtightness and environmental tests were conducted on the multilayer substrate using the metallization of the present invention.
気密性はＨｅのディテクターを用い測定したところいず
れの試料も１．ＯＸ １０−”Ｓｔｄ ｃｃ／ｓｅｃ
以下であり、環境試験後の劣化もなかった。但し環境試
験条件は以下のとおりである。The airtightness was measured using a He detector and all samples were 1. OX 10-”Std cc/sec
and there was no deterioration after the environmental test. However, the environmental test conditions are as follows.
■温度サイクル（−６５℃〜２００℃）１０サイクル■
熱 衝 撃 （０℃〜１００℃）１５サイクル〃（−５
５℃〜１２５℃）１５サイクル〃（−６５℃〜１５０℃
）１００サイクルなお本発明の実施に当り特開昭５９−
９２９４３号公報に記載されたものの外、特開昭５９−
８３９５７号公報、特開昭５９−１３７３４１号公報、
特開昭５９−１２９４４１号公報に記載された結晶化ガ
ラス体を用いて基板とする場合も同様に本発明のメタラ
イズ組成物が有効であり又一般に低温焼成基板にも有効
である。■Temperature cycle (-65℃~200℃) 10 cycles■
Thermal shock (0℃~100℃) 15 cycles〃(-5
5℃~125℃) 15 cycles〃(-65℃~150℃
) 100 cycles In carrying out the present invention, Japanese Patent Application Laid-open No. 1983-
In addition to what is described in Publication No. 92943, JP-A-59-
No. 83957, JP-A-59-137341,
The metallizing composition of the present invention is similarly effective when the crystallized glass body described in JP-A-59-129441 is used as a substrate, and is also generally effective for low-temperature fired substrates.
（発明の効果）
本発明によれば、Ｆｅ／Ｆｅ２Ｏ：＋、 Ｎｉ／ＮｉＯ
を主体とするのメタライズにして、結晶化ガラスセラミ
ックの低誘電率と低膨張率に適したメタライズであり、
高価な貴金属を用いていないので低コストであり、多層
基板のパッケージに用いたときにメタライズの気密性に
著るしい向上を発揮することができる。(Effect of the invention) According to the invention, Fe/Fe2O:+, Ni/NiO
It is a metallization mainly based on , and is suitable for the low dielectric constant and low expansion coefficient of crystallized glass ceramics.
Since no expensive precious metals are used, the cost is low, and when used in a multilayer substrate package, it can significantly improve the airtightness of metallization.
第１図は本発明のメタライズ組成物を用いて製造したＰ
ＧＡパッケージの断面図を示す。
１・・・Ｆｅ／Ｎ ｉ系メタライズ、２・・・低温焼成
セラミック、３・・・純Ａｇロー、４・・・Ｃｕメタラ
イズ、５・・・４２アロイビン、６・・・スルーホール
代理人 弁理士 竹 内 守Figure 1 shows P produced using the metallizing composition of the present invention.
A cross-sectional view of the GA package is shown. 1...Fe/Ni-based metallization, 2...Low temperature fired ceramic, 3...Pure Ag low, 4...Cu metallization, 5...42 alloy vinyl, 6...Through hole agent patent attorney Mamoru Takeuchi
Claims (2)
Ｏ粉末からなるＦｅ／Ｎｉ系粉末１００重量部と、焼結
助剤として低膨張フリット２〜３０重量部と、Ａｇ粉末
５重量部以下と、ＣｕＯ粉末０．１〜１０重量部とから
なることを特徴とするメタライズ組成物(1) Fe powder, Fe_2O_3 powder, Ni powder, Ni
Consists of 100 parts by weight of Fe/Ni-based powder consisting of O powder, 2 to 30 parts by weight of low expansion frit as a sintering aid, 5 parts by weight or less of Ag powder, and 0.1 to 10 parts by weight of CuO powder. A metallized composition characterized by
Ｏ粉末からなるＦｅ／Ｎｉ系粉末１００重量部と、焼結
助剤として低膨張フリット２〜３０重量部と、ＣｕＯ粉
末０．１〜１０重量部とからなることを特徴とするメタ
ライズ組成物。(2) Fe powder, Fe_2O_3 powder, Ni powder, Ni
1. A metallization composition comprising 100 parts by weight of Fe/Ni-based powder consisting of O powder, 2 to 30 parts by weight of low expansion frit as a sintering aid, and 0.1 to 10 parts by weight of CuO powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63113615A JPH0772111B2 (en) | 1988-05-12 | 1988-05-12 | Metallized composition for low thermal expansion substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63113615A JPH0772111B2 (en) | 1988-05-12 | 1988-05-12 | Metallized composition for low thermal expansion substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01286938A true JPH01286938A (en) | 1989-11-17 |
| JPH0772111B2 JPH0772111B2 (en) | 1995-08-02 |
Family
ID=14616703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63113615A Expired - Fee Related JPH0772111B2 (en) | 1988-05-12 | 1988-05-12 | Metallized composition for low thermal expansion substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0772111B2 (en) |
-
1988
- 1988-05-12 JP JP63113615A patent/JPH0772111B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0772111B2 (en) | 1995-08-02 |
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