JPH01286319A - Vapor growth method - Google Patents
Vapor growth methodInfo
- Publication number
- JPH01286319A JPH01286319A JP11564388A JP11564388A JPH01286319A JP H01286319 A JPH01286319 A JP H01286319A JP 11564388 A JP11564388 A JP 11564388A JP 11564388 A JP11564388 A JP 11564388A JP H01286319 A JPH01286319 A JP H01286319A
- Authority
- JP
- Japan
- Prior art keywords
- dadbs
- teoa
- thermal decomposition
- mixed gas
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 12
- BUZKVHDUZDJKHI-UHFFFAOYSA-N triethyl arsorite Chemical compound CCO[As](OCC)OCC BUZKVHDUZDJKHI-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 10
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 9
- OPARTXXEFXPWJL-UHFFFAOYSA-N [acetyloxy-bis[(2-methylpropan-2-yl)oxy]silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)(C)C)OC(C)(C)C OPARTXXEFXPWJL-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 15
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- COHDHYZHOPQOFD-UHFFFAOYSA-N arsenic pentoxide Chemical compound O=[As](=O)O[As](=O)=O COHDHYZHOPQOFD-UHFFFAOYSA-N 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 229910052681 coesite Inorganic materials 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 238000001179 sorption measurement Methods 0.000 abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000006227 byproduct Substances 0.000 abstract description 2
- 238000006116 polymerization reaction Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 5
- 238000011109 contamination Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 150000002902 organometallic compounds Chemical class 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000000045 pyrolysis gas chromatography Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- OIDLZWQUPGLUTN-UHFFFAOYSA-N [acetyloxy-[(2-methylpropan-2-yl)oxy]silyl] acetate Chemical compound CC(=O)O[SiH](OC(C)=O)OC(C)(C)C OIDLZWQUPGLUTN-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 102200163533 rs387906929 Human genes 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/02—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、砒素ガラス（Ａｓ５Ｇ）を形成するための気
相成長方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vapor phase growth method for forming arsenic glass (As5G).
本発明は、砒素ガラスの気相成長方法において、互いに
熱分解温度の近いジアセトキシ・ジターシャリイ・ブト
キシ・シラン（口ＡＤＢＳ ）とトリエトキシアルシン
（ＴＨＯＡ）の混合ガスを熱分解することによって、ス
テップカバレージの良い砒素ガラスを形成できるように
したものである。In the vapor phase growth method of arsenic glass, the present invention improves step coverage by thermally decomposing a mixed gas of diacetoxy ditertiary butoxy silane (ADBS) and triethoxyarsine (THOA), which have similar thermal decomposition temperatures. This makes it possible to form good arsenic glass.
商集積半導体装置等において、その凹凸を有する半導体
基体にｎ十不純物のドーピングを行う場合には固相拡散
が一般的である。この場合、拡散源としてステップカバ
レージの良いＡｓ５ＧＩＩ５ｔ！ （５ｉ（ｈ＋ＡＳ２
０６ ：砒素ガラス）が求められている。Solid phase diffusion is generally used when doping n0 impurities into a semiconductor substrate having irregularities in a commercially integrated semiconductor device or the like. In this case, As5GII5t with good step coverage is used as the diffusion source! (5i(h+AS2
06: Arsenic glass) is in demand.
従来の八５ｓＧｌｐＪの形成は、例えばＳｌ）＋４ ＋
ＡＳＣ１３を用いた以下の反応により得ていた。The conventional formation of 85sGlpJ is, for example, Sl)+4+
It was obtained by the following reaction using ASC13.
５ｉ）１４＋ ０２ → ５ｉ（ｈ ＋ ８２
・・・（１）八ｓＣｈ ＋ Ｈ２＝ ＡＳ）
＋３ ＋ ＨＣＩ ・ ・ １２１八ＳＨ３＋
０２ − Ａｓ２Ｏ５＋ Ｈ２・ ・
１３１また、５ＩＨ４＋ ΔｓＨｈを用い上記（１１
、（３１式でΔ５ＳＧ１１９！を得る方法も知られてい
る。5i) 14+ 02 → 5i(h + 82
...(1) 8sCh + H2= AS)
+3 + HCI ・ ・ 1218 SH3+
02 - As2O5+ H2・・
131 Also, the above (11
, (A method of obtaining Δ5SG119! using Equation 31 is also known.
さらに、ＴＥＯＳ （（Ｃ２Ｈ５０） ４ Ｓｔ ：テ
トラエトキシシランテ及びＴＥＯＡ （Ａｓ （ＯＣ２
Ｈ５）］ ： トリエトキシアルシン）の熱分解反応Ｔ
ＨＯＳ＋ＴＩＡ＋０２− ＳｉＯ２＋ Ａｓ２Ｏｓ ＋
Ｃ２ＨＩ３０Ｃ２Ｈｓを用いてＡｓ５Ｇ膜を形成する
方法も知られている。Furthermore, TEOS ((C2H50) 4 St :tetraethoxysilante and TEOA (As (OC2
H5)]: thermal decomposition reaction T of triethoxyarsine)
HOS+TIA+02- SiO2+ As2Os +
A method of forming an As5G film using C2HI30C2Hs is also known.
ところで、上述の例えばＳｉＨ４＋ ０２ ＋ ＡｓＣ
ｈ系（！ＩＩち（１１ｆ２１ ＋３１式）で得られた＾
５ｓＧＩＱは、ハロゲン糸のＡｓＣｈを用いている為、
反応生成物のＨＣＩがＡ３５Ｇ膜中に数ｗｔ％取り込ま
れやすく、Ｓｉ界面で気胞を生じたり、リフロー膜に用
いた場合へｌ配線の信頼性を悪化しやすかった。By the way, for example, the above-mentioned SiH4+ 02 + AsC
Obtained with h system (!IIchi (11f21 +31 formula)^
5sGIQ uses halogen thread AsCh, so
Several wt % of HCI, a reaction product, was likely to be incorporated into the A35G film, causing air bubbles at the Si interface and deteriorating the reliability of the wiring when used in a reflow film.
一方、 ５１１１４ ＋ ＾ＳＨ３を用いて（１１（
３１式で得られる八５ｓｃｌＪは、ハロゲンのｔ号染が
なくなるが、 八ＳＨ３の取り扱いに注意する必要があ
り、安全面でコスト高となるものであった。On the other hand, using 51114 + ^SH3 (11(
Although the 85sclJ obtained from Type 31 eliminates the halogen T dyeing, it is necessary to handle the 8SH3 with care, resulting in high costs from a safety standpoint.
また、上記のＡｓ５Ｇは凹凸部のステップカバレージが
悪く、 ５ｉｆｔ４＋０２系（７）ＣＶＤＳｉＯ２膜よ
りも悪化しやすい。従って段差部への均一なｎ＋不純物
の拡散に不向きであり、またリフロー膜に用いた場合、
フロー時に「す」が発生しやすかった。Furthermore, the As5G described above has poor step coverage of uneven parts, which is more likely to deteriorate than the 5ift4+02 series (7) CVDSiO2 film. Therefore, it is not suitable for uniformly diffusing n+ impurities into the stepped portion, and when used in a reflow film,
“Su” was more likely to occur during flow.
また、ＴＩ！ＯＳ＋ＴＥＯＡ＋ ０２− Ｓｉｏ２＋Ａ
ｓ２ｏｓ ＋Ｃ２ＨＧ ０Ｃ２Ｈ５の反応系を用いた場
合、Ｔｈ１ｓとＴｌ４ＯＡとの熱分解温度が大幅に異な
る為（第１図のＴＥＯＡ（Ａｓ （ＯＣ２Ｈ５）］）の
熱分解ガスクロマトグラフィーテデータび第２図ノＴＥ
Ｏ５（Ｓｔ （ＯＣ２Ｈ５）４ ） （７）熱分解ガス
クロマトグラフィーデータを参照） 、１’ＥＯ３の熱
分解温度でＴＨＯＡが基体に吸着する前の気相状態で熱
分解してしまうのでＡＳ２０５が堆積しにくくなり、へ
ｓ’ｔｌｌｔ、度が高濃度に入りにくい。又、バッチ方
式の横型炉や縦型炉を用いた場合、へｓ濃度の制御がむ
ずかしい。Also, TI! OS+TEOA+ 02- Sio2+A
When using the reaction system of s2os +C2HG 0C2H5, the thermal decomposition temperatures of Th1s and Tl4OA are significantly different (TEOA (As (OC2H5)) in Figure 1), so the thermal decomposition gas chromatography data and Figure 2. T.E.
O5 (St (OC2H5)4 ) (7) Refer to pyrolysis gas chromatography data), AS205 is deposited because THOA is thermally decomposed in the gas phase before adsorbing to the substrate at the thermal decomposition temperature of 1'EO3. It becomes difficult to get into high concentrations. Furthermore, when a batch-type horizontal furnace or vertical furnace is used, it is difficult to control the hesium concentration.
本発明は、上述の問題点を改善し良好なへｓＳＧ股を形
成できる気相成長方法を提供するものである。The present invention provides a vapor phase growth method that can improve the above-mentioned problems and form a good sSG crotch.
〔課題を解決するための手段」
本発明は、砒素ガラスの気相成長方法において、ジアセ
トキシ・シターシャリイ・ブトキシ・シラン（ＤＡＤＢ
Ｓ ）とトリエトキシアルシン（ＴｈＯＡ）の混合ガス
を熱分解して砒素ガラスを形成することを特徴とする。[Means for Solving the Problems] The present invention provides a vapor phase growth method for arsenic glass using diacetoxy-tertiary-butoxy-silane (DADB).
It is characterized by forming arsenic glass by thermally decomposing a mixed gas of S ) and triethoxyarsine (ThOA).
本発明によれば、０ＡＤＢＳ及びＴＥＯＡの混合ガスの
基体上への吸着−重合−熱分解という反応を経て、すな
わちＤＡＤＢＳ ＋ ＴＨＯＡ＋ Ｃｈ” ５ｔｏ２
＋４５２０５ ＋Ｃ２Ｈ５０Ｃ２Ｈｓの熱分解反１６に
よってＡｓ５ＧＩＱが形成される。 ５１０２の形成で
はＤＡＤＢＳ （、（八Ｇｏ）２ｓｉ（ＯｔＢｕ）ｚ
）を用いるので３５０℃〜６５０℃程度でＳｉＯ２に熱
分解できる。＾５２０５の形成ではＴＨＯＡ（八ｓ （
０Ｃ２Ｈ５）３）で行うので３５０℃〜５５０℃（つま
りＤＡＤＢＳの熱分解温度とほとんど同じ温度）で八５
２０５に熱分解し、Ｃ２Ｈａ ０Ｃ２Ｈｓ等の副生成物
を気化する（第１図参照）。According to the present invention, a mixed gas of 0ADBS and TEOA is adsorbed onto a substrate through a reaction of adsorption, polymerization, and thermal decomposition, that is, DADBS + THOA + Ch" 5to2
As5GIQ is formed by pyrolysis reaction 16 of +45205 +C2H50C2Hs. In the formation of 5102, DADBS (, (8Go)2si(OtBu)z
), it can be thermally decomposed into SiO2 at about 350°C to 650°C. In the formation of ^5205, THOA (8s (
Since it is carried out at 0C2H5)3), it is heated at 350℃ to 550℃ (that is, almost the same temperature as the thermal decomposition temperature of DADBS).
205 and vaporize by-products such as C2Ha 0C2Hs (see Figure 1).
不法では０ＡＤＢＳとＴＥＯへの熱分解温度が互いに近
いのでＡｓ４度が高濃度に入り且つ均一な八５ｓＧＩＱ
が得られる。In the illegal case, the thermal decomposition temperatures to 0ADBS and TEO are close to each other, so As4C enters a high concentration and has a uniform 85sGIQ.
is obtained.
有機金属化合物（ＯＡＤＢＳ、ＴＨＯＡ）を用いる為、
凹凸部でも吸着−重合−熱分解の反応を経ており、得ら
れたＡ ｓ Ｓ ＧＭ９！のステップカバレージは良い
。また、Ａｓ濃度の制御はＴＥＯＡの吸着効率の高い温
度３５０℃〜５５０℃で行えるので制御しやすい。さら
に、塩素を用いないので、従来のようなＡｓ５Ｇ膜のＣ
Ｉ汚染は生ぜず、Ｓｉ界面を荒すことがない。Because organometallic compounds (OADBS, THOA) are used,
The adsorption-polymerization-thermal decomposition reaction also occurred on the uneven parts, and the obtained A s S GM9! The step coverage is good. Furthermore, the As concentration can be easily controlled at a temperature of 350° C. to 550° C. at which TEOA adsorption efficiency is high. Furthermore, since chlorine is not used, C
No I contamination occurs and the Si interface is not roughened.
通常のＣＶＤ装置を用い、０ＡＤＢＳ （（ＡＣＯ）
２Ｓｉ （０ＬＢＬＩ）２ ）とＴＥＯＡ （Ａｓ
（０Ｃ２Ｈ５）ｘ ）のガスを制御できるガス供給系を
設置し、囲１１Ｂｓと１’ ＩＥ ＯＡのガスを熱分解
炉に任意の分圧で導き、熱分解する。0ADBS ((ACO)
2Si (0LBLI)2 ) and TEOA (As
A gas supply system capable of controlling the gas of (0C2H5)
特に、キャリアガスに０２．Ｎ２又はＡｒ等、或はこれ
らの組合せガスを同時に流してもよい。但し、ＤＡＤＢ
ＳとＴＥＯＡのみでも可能である。トータルのガス圧力
は１０〜５００ Ｐａとし、０ＡＤＢＳの流量は１０〜
５００ ＳＣＣＭ、ＴＥＯへの流量は１〜５００３ＣＣ
Ｍとすることができる。またウェーハ温度は例えは減圧
ＣＶＤ方式のときには３５０℃〜５５０℃で行い、プラ
ズマＣＶＤ方式のときには１００°Ｃ〜４００℃で行う
を可とする。In particular, the carrier gas has 02. Gases such as N2 or Ar, or a combination thereof may be flowed simultaneously. However, DADB
It is also possible to use only S and TEOA. The total gas pressure is 10 to 500 Pa, and the flow rate of 0ADBS is 10 to 500 Pa.
500 SCCM, flow rate to TEO is 1~5003CC
It can be M. Further, the wafer temperature may be, for example, 350° C. to 550° C. when using the low pressure CVD method, and 100° C. to 400° C. when using the plasma CVD method.
形成法は、常圧ＣＶＤ、減圧ＣＶＩ）、プラズマＣＶＤ
のいずれで行っても良い。但し、ＤＡＤＢＳも、１’Ｅ
ＯＡも液体ソースであるので、減圧ＣＶＤか、プラズマ
ＣＶＤの方がガスの蒸気圧が得られ易く、好ましい。減
圧ＣＶＤ方式は、横型炉、縦型炉、等温球体炉、コール
ドウオール炉、枚葉式でも良い。Formation methods include normal pressure CVD, low pressure CVI), plasma CVD
You can go either way. However, DADBS also has 1'E
Since OA is also a liquid source, low pressure CVD or plasma CVD is preferable because it is easier to obtain the vapor pressure of the gas. The reduced pressure CVD method may be a horizontal furnace, a vertical furnace, an isothermal spherical furnace, a cold wall furnace, or a single wafer type.
そして、上記のＩ）ＡＪＢＳとＴＨＯＡの混合ガスの熱
分解ＤＡＤＢＳ ＋ＴＥ０八＋０２−５ｉ０２ 十
八５２０ｓ ＋Ｃ２Ｈ５０Ｃ２Ｈ６によってΔ５ｓＧ
ＩＱが形成される。And the above I) Pyrolysis of mixed gas of AJBS and THOADADBS +TE08+02-5i02
Δ5sG by 8520s +C2H50C2H6
IQ is formed.
上述のＡｓ５ＧＩＱの形成方法によれば、互いに熱分）
Ｗ温度が近いｌｌＡｌ］１３ｓとＴＨＯＡの有機金属化
合物を用いることにより、Ａｓａ度の高い且つ均一な八
５ｓＧＩＩＱを形成することができる。またＩＩＡＤＢ
ｓとＴＨＯＡの熱分解温度が近い為、特に反応炉構造を
変更せずにるので、濃度制御がしやすく、バッチ式の減
圧ＣＶＤ炉で行っても、ウェーハ間のバラツキを低く抑
えることができる。即ち各ウェーハにおいて均一なＡｓ
５Ｇ膜を形成することができる。また、塩素系ガスを用
いないので、従来のＳｉＨ４＋ ０２ ＋ ＡｓＣｈ系
の場合のような膜中のＣＩ汚染がなく、Ｓｉ界面を荒ら
すことがない。さらに、従来の５ｉ）Ｉ４＋Ｑ□系では
ステップカバレージが悪く、微細パターンでは「す」が
出来やすかったが、不法ではＤＡＤＢＳ系を用いている
為に凹凸部でも吸着−市合一熱分解という反応を経てお
り、Ａｓ５Ｇ膜のステソプバレージが良くなる。従って
微細パターンでも「す」が出来ない。According to the above-mentioned method of forming As5GIQ, mutual heat content)
By using an organometallic compound of 11Al]13s and THOA, which have similar W temperatures, it is possible to form a uniform 85sGIIQ with a high Asa degree. Also IIADB
Since the thermal decomposition temperatures of s and THOA are close, there is no need to change the reactor structure, making it easy to control the concentration, and even when using a batch-type low-pressure CVD furnace, variations between wafers can be kept low. . That is, uniform As in each wafer
A 5G film can be formed. Furthermore, since no chlorine-based gas is used, there is no CI contamination in the film unlike in the case of the conventional SiH4+ 02 + AsCh system, and there is no possibility of roughening the Si interface. Furthermore, the conventional 5i)I4+Q□ system had poor step coverage and was prone to forming "s" in fine patterns, but since the illegal DADBS system is used, the reaction of adsorption-market-thermal decomposition occurs even on uneven surfaces. As a result, the stethop coverage of the As5G film improves. Therefore, even with fine patterns, "su" cannot be formed.
上述の本発明によれば、０ＡＤＢＳと１’ Ｅ ＯＡの
有機金属化合物を用いている為に凹凸部でもステップカ
バレージの良い＾５ｓＧ１９！を形成することができる
。According to the present invention described above, since the organometallic compound of 0ADBS and 1'EOA is used, step coverage is good even on uneven parts^5sG19! can be formed.
しかも、０ＡＤＢＳとＴＥＯ＾の熱分解温度が互いに近
い温度であるのでＡｓ４度の高い且つ均一な＾ｓＳＧ膜
を形成することができる。また、Ａｓ′ａ度の制御が１
゛ＥＯ＾の吸着効率の篩い温度で行えるので例えばバッ
チ式の減圧ＣＶＩ）炉で行ってもウェーハ間のバラツキ
を低く抑えることができ、均一にＡｓ２Ｏ３％を形成で
き′る。さらに、Ａｓ５Ｇ膜のＣＩ汚染がな（、Ｓｉ界
面を荒すこともない。従って、本発明は凹凸を有する半
導体体上に拡散源としてのＡｓ５Ｇ膜を形成する場合に
通用して好適ならしめるものである。Furthermore, since the thermal decomposition temperatures of 0ADBS and TEO^ are close to each other, it is possible to form a uniform^sSG film with a high As4 degree. In addition, the control of As'a degree is 1
Since the adsorption can be carried out at a temperature that satisfies the adsorption efficiency of ``EO,'' even if it is carried out in a batch-type low-pressure CVI (CVI) furnace, for example, variations between wafers can be kept low, and As2O3% can be uniformly formed. Furthermore, there is no CI contamination of the As5G film (and the Si interface is not roughened. Therefore, the present invention is applicable and suitable for forming an As5G film as a diffusion source on a semiconductor body having unevenness. be.
第１図はＴＥＯＡの熱分解ガスクロマトグラフィーデー
タを示す線図、第２図はＴＥ０１の熱分解ガスクロマト
グラフィーデータを示す線図である。FIG. 1 is a diagram showing the pyrolysis gas chromatography data of TEOA, and FIG. 2 is a diagram showing the pyrolysis gas chromatography data of TE01.
Claims (1)
ＡＤＢＳ）とトリエトキシアルシン（ＴＥＯＡ）の混合
ガスを熱分解して砒素ガラスを形成することを特徴とす
る気相成長方法。[Claims] In the vapor phase growth method of arsenic glass, diacetoxy ditertiary butoxy silane (D
A vapor phase growth method characterized by forming arsenic glass by thermally decomposing a mixed gas of ADBS) and triethoxyarsine (TEOA).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11564388A JP2663508B2 (en) | 1988-05-12 | 1988-05-12 | Vapor growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11564388A JP2663508B2 (en) | 1988-05-12 | 1988-05-12 | Vapor growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01286319A true JPH01286319A (en) | 1989-11-17 |
| JP2663508B2 JP2663508B2 (en) | 1997-10-15 |
Family
ID=14667720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11564388A Expired - Lifetime JP2663508B2 (en) | 1988-05-12 | 1988-05-12 | Vapor growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2663508B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006013503A (en) * | 2004-06-29 | 2006-01-12 | Internatl Business Mach Corp <Ibm> | Doped nitride film, doped oxide film, and other doped films |
-
1988
- 1988-05-12 JP JP11564388A patent/JP2663508B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006013503A (en) * | 2004-06-29 | 2006-01-12 | Internatl Business Mach Corp <Ibm> | Doped nitride film, doped oxide film, and other doped films |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2663508B2 (en) | 1997-10-15 |
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