JPH01283859A - Manufacture of trench capacitor insulating film - Google Patents
Manufacture of trench capacitor insulating filmInfo
- Publication number
- JPH01283859A JPH01283859A JP11283788A JP11283788A JPH01283859A JP H01283859 A JPH01283859 A JP H01283859A JP 11283788 A JP11283788 A JP 11283788A JP 11283788 A JP11283788 A JP 11283788A JP H01283859 A JPH01283859 A JP H01283859A
- Authority
- JP
- Japan
- Prior art keywords
- trench
- reactive ion
- ion etching
- residue
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000003990 capacitor Substances 0.000 title claims description 7
- 238000001020 plasma etching Methods 0.000 claims abstract description 18
- 238000005121 nitriding Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000007781 pre-processing Methods 0.000 abstract 2
- 208000037998 chronic venous disease Diseases 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はＤＲＡＭにおけるトレンチキャパシタの製造
方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a trench capacitor in a DRAM.
第２図は従来のトレンチキャパシタの製造過程を示した
もので、図において、（１）はシリコン基板、（２）は
マスク、（８）はトレンチ、（４）は反応性イオンエツ
チングによる残留物、（６）はトレンチコーナー部、（
７）はＣＶＤ処理による窒化膜、（８）不所望な酸化膜
である。Figure 2 shows the manufacturing process of a conventional trench capacitor. In the figure, (1) is a silicon substrate, (2) is a mask, (8) is a trench, and (4) is a residue from reactive ion etching. , (6) is the trench corner part, (
7) is a nitride film formed by CVD treatment, and (8) is an undesired oxide film.
次に製造方法について説明する。ｆａｔにおいて、シリ
コン基板（１）をマスク（２）を通じそ、反応性イオン
エツチングによりトレンチ（８）を形成する。このとき
に、トレンチ（８）の内壁に反応性イオンエツチングに
よる残留物（４）が付着し、そして、トレンチコーナー
部（５）のエツジが残っている。反応性イオンエツチン
グによる残留物（４）を除去するために前処理を行った
後、（１）ｌのようにＣＶＤ処理により窒化膜（７ンを
形成する。この窒化膜（γンは、前処理により除去でき
なかった反応性イオンエツチングによる残留物（４）、
自然酸化や、巻込み酸化により形成された不所望な酸化
膜（８）の上に形成されている。Next, the manufacturing method will be explained. A trench (8) is formed by reactive ion etching in the silicon substrate (1) through a mask (2). At this time, residue (4) from reactive ion etching adheres to the inner wall of the trench (8), and the edges of the trench corner portions (5) remain. After performing pretreatment to remove the residue (4) caused by reactive ion etching, a nitride film (7) is formed by CVD treatment as in (1)l. Residues from reactive ion etching that could not be removed by treatment (4);
It is formed on an undesired oxide film (8) formed by natural oxidation or entrainment oxidation.
このとき、トレンチコーナー部（６）のエツジは残って
いる。At this time, the edges of the trench corner portions (6) remain.
従来の製造方法は以上のように構成されているので、ト
レンチ内壁についた反応性イオンエツチングによる残留
物（４）を前処理により完全に除去できない、不所望な
酸化膜（８）が形成されたままである、そして、トレン
チコーナー部（５）が残るために、トレンチキャパシタ
絶縁膜の信頼性を低下させるという問題点かあつ九。Since the conventional manufacturing method is configured as described above, the residue (4) caused by reactive ion etching on the inner wall of the trench cannot be completely removed by pretreatment, and an undesired oxide film (8) is formed. Furthermore, since the trench corner portions (5) remain, there is a problem in that the reliability of the trench capacitor insulating film is reduced.
この発明は上記のような問題点を解消するためになされ
たもので、不所望な酸化膜、トレンチエツチングによる
残留物を取り除き、トレンチのコーナー部を丸めること
のできる方法を得ることを目的としているう
〔課題を解決するための手段〕
この発明に係る方法は、シリコン基板のプラズマ窒化を
用いることにより、反応性イオンエツチングの残留物、
不所望な酸化膜が除去して、かつ、トレンチコーナー部
を丸める。This invention was made to solve the above-mentioned problems, and aims to provide a method that can remove undesired oxide films and residues from trench etching and round the corners of trenches. [Means for Solving the Problems] The method according to the present invention uses plasma nitridation of a silicon substrate to remove reactive ion etching residues,
Undesired oxide film is removed and trench corners are rounded.
この発明によれば、プラズマ窒化を用いることにより、
処理中、プラズマの効果により、反応性イオンエツチン
グの残留物、不所望な酸化膜を除去し、そして、トレン
チのコーナー部を丸めることができる。According to this invention, by using plasma nitriding,
During processing, the plasma effect can remove reactive ion etch residues, undesired oxide layers, and round the corners of the trench.
以下、この発明の一実施例を図について説明する。第１
図において、（１）はシリコン基板、（２）はマスク、
（８）はトレンチ、（４）は反応性イオンエツチングに
よる残留物、（５）はトレンチコーナー部、（６）はプ
ラズマ窒化による窒化膜である。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, (1) is a silicon substrate, (2) is a mask,
(8) is a trench, (4) is a residue from reactive ion etching, (5) is a trench corner portion, and (6) is a nitride film formed by plasma nitridation.
第１図（ａｌでは、従来技術と同様に、反応性イオンエ
ツチングによりトレンチ（８）を形成する。この後、前
処理により、反応性イオンエツチングの残留物（４）を
除去するために行うが、完全に除去できないのは、従来
と同様である。また、トレンチコーナー部（５）のエツ
ジも残ったままである。前処理の後、（ｂｌに示すよう
に、プラズマ窒化により窒化膜（６）を形成する。この
ときに、処理中のプラズマの作用により、反応性イオン
エツチングによる残留物（４）を除去し、不所望な酸化
膜も形成されず、そしてトレンチコーナ部（６）が丸め
られる。In FIG. 1 (al), a trench (8) is formed by reactive ion etching as in the prior art. After this, a pretreatment is performed to remove the residue (4) of the reactive ion etching. , as in the conventional case, cannot be completely removed.Also, the edges of the trench corner portions (5) remain.After the pretreatment, as shown in (bl), the nitride film (6) is removed by plasma nitriding. At this time, due to the action of plasma during processing, the residue (4) caused by reactive ion etching is removed, an undesired oxide film is not formed, and the trench corner portion (6) is rounded. .
以上のように、この発明によれば、トレンチキャパシタ
絶縁膜をプラズマ窒化により作製するので、反応性イオ
ンエツチングの残留物や不所望な酸化膜を除去し、トレ
ンチのコーナ部を丸める効果がある。As described above, according to the present invention, since the trench capacitor insulating film is manufactured by plasma nitridation, it is effective to remove reactive ion etching residues and undesired oxide films and to round the corners of the trench.
第１図のこの発明の一実施例によるトレンチキャパシタ
の製造過程図、第２図は従来方法による製造過程図を示
す。（１）はシリコン基板、（２）はマスク、（８）は
トレンチ、（４）は反応性イオンエツチングによる残留
物、（５）はトレンチコーナー部、（６）はプラズマ窒
化による窒化膜、（７）はＯｖＤ処理による窒化膜、（
８）は不所望な酸化膜である。
なお、図中、同一符号は同一、又は相当部分を示す。FIG. 1 shows a manufacturing process diagram of a trench capacitor according to an embodiment of the present invention, and FIG. 2 shows a manufacturing process diagram using a conventional method. (1) is a silicon substrate, (2) is a mask, (8) is a trench, (4) is a residue from reactive ion etching, (5) is a trench corner, (6) is a nitride film formed by plasma nitridation, ( 7) is a nitride film by OvD treatment, (
8) is an undesired oxide film. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
イオンエッチングの残留物、不所望な酸化膜を除去し、
トレンチのコーナー部を丸めたこと特徴とするトレンチ
キャパシタ絶縁膜の製造方法。Plasma nitriding is used to remove reactive ion etching residues and undesired oxide films due to the plasma effect.
A method for manufacturing a trench capacitor insulating film characterized by rounding the corners of the trench.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11283788A JPH01283859A (en) | 1988-05-10 | 1988-05-10 | Manufacture of trench capacitor insulating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11283788A JPH01283859A (en) | 1988-05-10 | 1988-05-10 | Manufacture of trench capacitor insulating film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01283859A true JPH01283859A (en) | 1989-11-15 |
Family
ID=14596773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11283788A Pending JPH01283859A (en) | 1988-05-10 | 1988-05-10 | Manufacture of trench capacitor insulating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01283859A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7479688B2 (en) | 2003-05-30 | 2009-01-20 | International Business Machines Corporation | STI stress modification by nitrogen plasma treatment for improving performance in small width devices |
-
1988
- 1988-05-10 JP JP11283788A patent/JPH01283859A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7479688B2 (en) | 2003-05-30 | 2009-01-20 | International Business Machines Corporation | STI stress modification by nitrogen plasma treatment for improving performance in small width devices |
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