JPH01280382A - Semiconductor substrate having superconductor layer - Google Patents

Abstract

PURPOSE:To obtain a semiconductor substrate having, on a semiconductor single-crystal substrate, a composite oxide superconductor thin-film Iayer whose superconducting characteristics including a critical temperature are excellent by a method wherein the thin-film layer composed of a composite oxide superconductor is formed on a substrate provided with a buffer layer composed of ZrO2 or MgO formed on a diamond single crystal. CONSTITUTION:A thin-film layer composed of a composite oxide superconductor is formed on a substrate provided with a buffer layer composed of ZrO2 or MgO formed on a diamond single crystal. It is desirable that the ZrO2 buffer layer or the MgO buffer layer is formed on a (100) plane of the diamond single- crystal substrate. In addition, it is desirable that the ZrO2 or MgO buffer layer is formed by using a method of sputtering, ion plating, molecular beam epitaxy, CVD or the like; it is desirable that its film thickness is 50 to 1000Angstrom . In addition, it is desirable that also the composite oxide superconductor layer is formed by using the method of sputtering, ion plating, molecular beam epitaxy, CVD or the like.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to semiconductor substrates. More specifically, the present invention relates to a semiconductor single crystal substrate having at least one superconductor layer.

The semiconductor substrate of the present invention not only uses the above-mentioned superconductor as a line material for a semiconductor integrated circuit, but also a Josephson element in which a Josephson bond is formed in the superconductor, a superconducting transistor in which a superconductor and a semiconductor are combined, and a hot electron It can be used as a material for elements such as transistors.

Conventional technology Conventional semiconductor integrated circuits are made by forming an insulating film on a semiconductor single crystal substrate such as silicon, patterning it, doping with impurities by thermal diffusion, ion implantation, etc. to fabricate the necessary elements, and then metal. Wiring is done by vapor deposition.

Since the metal wiring pattern is formed by vapor deposition, its cross-sectional area is extremely small, resulting in loss of signal current.

Furthermore, although integrated circuit elements such as superconducting transistors and hot electron transistors that combine superconductors and semiconductors have been conceptually proposed, none have been manufactured using composite oxide superconducting materials specifically.

Problems to be Solved by the Invention The metal wiring patterns of semiconductor integrated circuits are formed by vapor deposition or the like, so their cross-sectional area is minute, and loss of signal current is unavoidable. Furthermore, in order to improve the operating speed of a semiconductor integrated circuit, it is important to improve the operating speed of the element itself, but it is also necessary to improve the signal propagation speed in wiring.

However, in conventional semiconductor integrated circuits, there is a limit to improving the signal propagation speed due to loss in the wiring portion. Furthermore, as the degree of integration of elements increases due to loss in wiring portions and density increases, power consumption increases, and the heat generated thereby naturally limits the degree of integration.

Furthermore, when forming elements such as superconducting transistors, hot electron transistors, and FETs that combine superconductors and semiconductors, a substrate with a uniform layer of superconducting material formed on a semiconductor single crystal substrate is essential. Among the Nb-based superconducting materials, there has been no one in which a layer of superconducting material is uniformly formed on a semiconductor substrate. Furthermore, metal-based superconductors have low critical temperatures and are not practical.

An object of the present invention is to solve the above problems and provide a semiconductor substrate having a composite oxide superconductor thin film layer having excellent superconducting properties including critical temperature on a semiconductor single crystal substrate.

Means for Solving the Problems According to the present invention, a thin film layer made of a composite oxide superconductor is formed on a substrate provided with a buffer layer made of 2rO□ or lJg○ formed on a diamond single crystal. A semiconductor substrate having a superconductor layer is provided.

In the present invention, the thickness of the ZrO□ or MgO buffer layer is preferably 50 to 1000. Further, the crystal structure of the ZrO□ or MgO buffer layer is preferably one of the following.

1.2rO□ or! The 4gO buffer layer has an amorphous structure.

2. The ZrO□ buffer layer is tetragonal and (100)
It has an orientation in which the plane is the surface, or it is a single crystal in which the (100) plane is the surface.

3.2r○2 buffer layer is cubic crystal, (100)
It has an orientation in which the plane is the surface, or it is a single crystal in which the (100) plane is the surface.

4. The MgO2 buffer layer has an orientation with the (100) plane as the surface, or is a single crystal with the (100) plane as the surface.

5. The MgCh buffer layer has an orientation with the (111) plane as the surface, or is a single crystal with the (111) plane as the surface.

According to the invention, the superconductor is preferably formed of a composite oxide superconducting material.

Any known material can be used as this composite oxide superconducting material. For example, the formula: (αl-Uβ) ryoz (where α is an element included in Group IIa of the periodic table,
β is an element included in group ma of the periodic table, T is at least one element selected from groups Ib, [b, 1lJb, ■a, and ■a of the periodic table, and x, y, and z are each 0.1≦X≦0.9.0.4≦y≦3.0.1≦2≦
A composite oxide that is considered to be mainly composed of a perovskite-type or pseudo-perovskite-type oxide represented by the formula (a number satisfying 5) is preferable.

Examples of the Group IIa element α of the periodic table include Ba and Sr.

CaXMg, Be, etc. are preferable, for example, Ba, S
r, and 10 to 80% of this element α is M
g, Ca.

It can also be replaced with one or two elements selected from Sr. In addition to Y, the group ma elements β of the periodic table include aSSc, Ce5Gd, l(o, Er,
T+TI.

Lanthanoid elements such as Yb and Lu are preferred, for example Y
lLa,,Ho, and among this element β,
It is also possible to substitute 10 to 80% with one or two elements selected from Sc or lanthanide elements.

The element T is generally Cu, but a part of it may be replaced with other elements selected from groups Ib, ■b, I[b, IVa, and ■a of the periodic table, for example, T1, V, etc. can. Specifically, Y 13a2CII30i-xs La+Ba2Cu
307-Xsshia+5r2cus 07-XN)I
O+BazCu307-X1Nd+Ba2Cu307-
X, S+r++Ba2Cut Ch-xsFiu1Ba
zCu+ Ch-x, Gd 1Ba2Cu307-X
sDy, Ba2Cu3Ch-x, Er+BazCLI3
07-x, Yl]+Ba2Cu:+07-X (where X is a number satisfying Q<x<1) is preferable.

Moreover, in the present invention, the formula: D L (E + - n, Can) ficul'
l Op+* (where D is Bi or TI and E
is Sr when D is B], and Ba when D is TI.
, 1=4, m satisfies 6≦m≦10, and n
satisfies 4≦n≦8, p = (31+2m+2n)
/ 2, # satisfies O<#< 1, * represents a number satisfying 12≦*≦2) B14Sr4(:a4cL160zo** (where *
represents a number that satisfies -2≦*≦+2) B12Sr2Ca2CII30 to-* (However, *
represents a number satisfying 12≦*≦+2) T l 4Ba , Ca 4Cu 6020+* (
However, * represents a number that satisfies -2≦*≦+2) or T12Ba2Ca2Cu301o, * (however, * represents a number that satisfies -2≦*≦+2), etc. It is considered to be a mixed phase mainly composed of complex oxides. Although it is also preferable to use a superconductor made of 100% oxide, a single phase of any of the above-mentioned composite oxides may be used.

Advantageously, the ZrO□ or Mg○ buffer layer is formed on the (100) plane of the diamond substrate.

The main feature of the semiconductor substrate having a superconductor layer of the present invention is that a composite oxide superconductor layer is formed on a semiconductor single crystal substrate via a buffer layer made of ZrO□ or MgO. . That is, unlike conventional ones, the semiconductor substrate having a superconductor layer of the present invention is not only a combination of a semiconductor and a composite oxide superconductor;
It includes a buffer layer that improves the interface state between the semiconductor and the composite oxide superconductor.

A conventional semiconductor substrate having a superconductor layer is simply a composite oxide superconductor thin film formed on a semiconductor substrate. Therefore, the interface state between the semiconductor and the composite oxide superconductor is unstable, and most devices do not function as a semiconductor device or have poor characteristics.

In the present invention, ZrO□ or M is deposited on a semiconductor single crystal.
By providing a buffer layer made of gO and further forming a composite oxide superconductor thin film on top of it, the interface condition has been significantly improved compared to conventional ones, and the characteristics as a semiconductor device have also been improved. .

In the present invention, the crystal structure of ZrO2 or MgO forming the buffer layer is preferably one of the following.

1, ZrO, or! The 4gO buffer layer has an amorphous structure.

2.2rO□ buffer layer is tetragonal, (100)
It has an orientation in which the plane is the surface, or it is a single crystal in which the (100) plane is the surface.

3. The ZrO2 buffer layer is cubic crystal, (100)
It has an orientation in which the plane is the surface, or it is a single crystal in which the (100) plane is the surface.

4. The MgO2 buffer layer has an orientation with the (100) plane as the surface, or is a single crystal with the (100) plane as the surface.

5. The MgO2 buffer layer has an orientation with the (111) plane as the surface, or is a single crystal with the (111) plane as the surface.

This is to improve the crystallinity of the composite oxide superconductor, and in the composite oxide superconductor thin film formed on the buffer layer with the above crystal structure, the C-axis of the crystal is close to parallel to the substrate deposition surface. Since it has an orientation that is aligned at an angle, the critical current density Jc in a specific surface direction and depth direction is improved.

The semiconductor substrate having the superconductor layer of the present invention can not only be used as a semiconductor integrated circuit board in which the wiring part is replaced with a composite oxide superconductor from conventional metal, but also can be used as a semiconductor integrated circuit board in which the wiring part is replaced with a composite oxide superconductor. It can also be used as a device material for forming semiconductor devices or new semiconductor elements such as superconducting transistors and thermionic transistors in which a semiconductor substrate and a superconductor are combined.

The composite oxide superconductor used in the semiconductor substrate having a superconductor layer of the present invention includes YBCO (YBCO), B
a2Cu307-,! A composite oxide superconductor having a multilayer perovskite crystal structure as represented by B14Sr4Ca4Cu602o+* (where * represents a number satisfying -2≦*≦+2), or T14Ba4C
a4CU6C)2o+* (However, * is one 2≦*≦+2
A composite oxide superconductor represented by the following formula is preferable. However, the superconductor used in the present invention is not limited to these, and any known superconductor can be used.

In addition, ZrO2 or 14g08 is provided to improve the state of the interface between the semiconductor single crystal substrate and the composite oxide superconductor.
To form the 777 layer, it is preferable to use a method such as sputtering, ion blasting, molecular beam epitaxy, or CVD (chemical vapor phase reaction), and the film thickness is 50 Å to improve the interface condition. In addition, in order for the superconducting proximity effect between the semiconductor and the insulator to occur, it is preferably 10008 or less.

Furthermore, in order to fabricate a semiconductor substrate having a superconductor layer of the present invention, sputtering, ion blasting, molecular beam epitaxy, CVD (chemical vapor phase It is preferable to form the composite oxide superconductor layer by a vapor deposition method such as a reaction method or a method similar to a vapor deposition method. At that time, it is preferable to form the composite oxide superconductor layer at a substrate temperature of 700° C. or lower so as not to impair the physical properties of the semiconductor single crystal.

Furthermore, the above ZrCh buffer layer or MgO buffer layer is preferably formed on the (100) plane of the diamond single crystal substrate. This is because the buffer layer easily takes the crystal structure described above, and the buffer layer formed on the above-mentioned surface of the diamond single-crystal substrate easily takes the crystal structure preferable in the present invention described above, and the interface condition It is also advantageous for improving

EXAMPLES Hereinafter, the present invention will be specifically explained by examples, but the following are merely examples of the present invention, and it goes without saying that the scope of the present invention is not similarly limited by the following disclosure. be.

ZrO2 as a buffer layer on a diamond single crystal substrate
A composite oxide superconductor layer was formed on the buffer layer to produce a semiconductor substrate having a superconductor layer of the present invention. The ZrO2 buffer layer was formed using a sputtering method at a temperature of 450° C. on a diamond single crystal substrate.

Using commercially available B12O3 powder, SrCO3 powder, CaCO5 powder, and CuO powder, the atomic ratio of Bi, Sr, Ca, and Cu was 1.4:1: Bi:Sr:Ca:Cu:
Bi-3r-Ca-Cu-0 composite oxide, YB, made by sintering raw material powder with a ratio of 1:1.5 according to a conventional method.
a2Cu4-s Ox sintered body powder and HOBa2.
A diamond semiconductor single crystal substrate (100
) A composite oxide superconductor layer is formed on the surface. Paying special attention to the positional relationship between the substrate and target and the magnitude of high-frequency power, sputtering is performed at a substrate temperature of 700° C. to grow a composite oxide superconductor layer of up to 1000 layers and use it as a sample. For comparison, a composite oxide superconductor layer was formed under exactly the same conditions on the (100) plane of a diamond semiconductor single crystal substrate on which no buffer layer was formed.

All of the above semiconductor substrates having a superconductor layer of the present invention have good interface conditions between the semiconductor and the buffer layer, and between the buffer layer and the superconductor layer, and have excellent properties as semiconductor device materials.

Further, the superconducting critical temperature and critical current at 77K of the superconducting layer of each sample are shown below.

As explained above, the semiconductor substrate having the superconductor layer of the present invention is very effective as a substrate for semiconductor devices.

Effects of the Invention The present invention provides a semiconductor substrate having a superconductor layer that is very effective as a novel semiconductor device material.

The present invention further promotes higher speed and higher density of semiconductor devices. Further, unlike Josephson devices, the present invention can be applied to semiconductor devices using superconductors having three or more terminals.

Patent applicant: Sumitomo Electric Industries, Ltd.

Claims (1)

[Claims] A semiconductor substrate having a superconductor layer, characterized in that a thin film layer made of a composite oxide superconductor is formed on a substrate provided with a buffer layer made of ZrO_2 or MgO formed on a diamond single crystal.