JPH01270591A - Process for forming dielectric film - Google Patents
Process for forming dielectric filmInfo
- Publication number
- JPH01270591A JPH01270591A JP9762988A JP9762988A JPH01270591A JP H01270591 A JPH01270591 A JP H01270591A JP 9762988 A JP9762988 A JP 9762988A JP 9762988 A JP9762988 A JP 9762988A JP H01270591 A JPH01270591 A JP H01270591A
- Authority
- JP
- Japan
- Prior art keywords
- film
- dielectric film
- atomic layer
- epitaxial process
- molecular beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Inorganic materials [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical group [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は誘電体膜の基板上への形成方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for forming a dielectric film on a substrate.
従来、基板上への誘電体膜の形成方法としては、ＣＶＤ
（Ｃｈｅｍｉｃａｌ Ｖａｐｏｕｒ Ｄｅｐｏｓｉｔ
ｉｏｎ）法やスパッタ法等が用いられていた。Conventionally, CVD has been used as a method for forming dielectric films on substrates.
(Chemical Vapor Deposit
ion) method, sputtering method, etc. were used.
しかし、上記従来技術によると、例えは酸化シリコンの
場合、Ｓ ｊＯ２と云う組成が最も安定である（すなわ
ちストイキオメトリ−である）にもかかわらすＳ ｊＯ
２と云う組成から少しずれた（すなわち酸素過多、シリ
コン過多等のアンストイキオメトリ−である）組成とな
り、その為に、誘電体膜や強誘電体膜の誘電率が一定ぜ
す、又、これら誘電体膜や強誘電体膜に電圧を印加した
場合に、誘電体膜中に電流が流れ易くなり、すなわちリ
ーク電流が発生し絶縁性が保てず、例えばこれら誘電体
膜や強誘電体膜を用いた電気容重体の′載荷保持特性が
悪くなる等の課題があった。However, according to the above-mentioned prior art, in the case of silicon oxide, for example, although the composition S jO2 is the most stable (that is, it has stoichiometry), S jO
The composition slightly deviates from the composition 2 (i.e., an stoichiometry with too much oxygen, too much silicon, etc.), and therefore the dielectric constant of the dielectric film and ferroelectric film is constant, and these When a voltage is applied to a dielectric film or ferroelectric film, current tends to flow through the dielectric film, that is, leakage current occurs, and insulation cannot be maintained. There were problems such as poor load retention characteristics of the electrocapacitive body using this method.
本発明は、かかる従来技術の課題を解決し、誘電率か安
定で、かつリーク電流の発生を抑制できる誘電体膜ある
いは強誘電体膜の新らしい形成方法を提供する事を目的
とする。It is an object of the present invention to solve the problems of the prior art and to provide a new method for forming a dielectric film or ferroelectric film that has a stable dielectric constant and can suppress the generation of leakage current.
上記課題を解決するために、本発明は誘電体膜の形成法
に係り、基板りに誘電体膜あるいは強誘電体膜を原子層
エピタキシャル法又は分子線エピタキシャル法にて形成
する手段をとる事を基本とする。In order to solve the above problems, the present invention relates to a method for forming a dielectric film, and involves forming a dielectric film or a ferroelectric film on a substrate using an atomic layer epitaxial method or a molecular beam epitaxial method. Basic.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示ず５ｉｎ２膜の原子層エ
ピタキシャル法である。FIG. 1 does not show one embodiment of the present invention, but shows an atomic layer epitaxial method for a 5 in 2 film.
すなわち、絶縁体や半導体あるいは金属・ａ金体等から
成る基板１の表面に、まつシリコン層２をＳ ｉ Ｈ４
力ス吸着後のＨ原子放出処理により形成し、次て酸素カ
ス中に配して、酸素層３を形成する操作を繰り返し、５
ｉｎ２膜となず訳である。That is, a silicon layer 2 is formed on the surface of a substrate 1 made of an insulator, a semiconductor, a metal, etc.
The process of forming the oxygen layer 3 by H atom release treatment after adsorption of force gas, and then disposing it in the oxygen scum, is repeated to form the oxygen layer 3.
It is called in2 membrane.
勿論、Ｓ ｉ Ｏ２分子を一分子層つつ積層する分子線
エピタキシャル法によ−）でＳ ｉ Ｏ２膜を形成して
も良く、更には、Ｓ ｉ ０２１模とＡ、Ｑ２０．層あ
るいは３４（ＩＮ＜層を分子層をプＶ７クラムして形成
する事もてきる。Of course, the SiO2 film may be formed by the molecular beam epitaxial method in which SiO2 molecules are laminated one molecular layer at a time. A layer or 34 (IN< layer) can also be formed by multiplying a molecular layer.
又、チタン酸バリウム膜の場合には、チタン原子とバリ
ウム原子を原子層エピタキシャル法にて形成後、酸化処
理するか、チタン原子層と酸素原子層を形成後、バリウ
ム原子層と酸素原子層を形成する操作を繰り返して膜と
なすか、あるいは酸化チタン分子と酸化バリウム分子を
交互に積Ｉ−する分子線エピタキシャル法にて形成する
事もてきる。In the case of a barium titanate film, titanium atoms and barium atoms are formed by an atomic layer epitaxial method and then oxidized, or a titanium atomic layer and an oxygen atomic layer are formed, and then a barium atomic layer and an oxygen atomic layer are formed. The film can be formed by repeating the forming operation, or by a molecular beam epitaxial method in which titanium oxide molecules and barium oxide molecules are alternately multiplied.
更に、ｐ ｚ ”Ｖと称されるｊ）トシルコニウム・チ
タン酸膜の場合も、釦、ジルコニウム、チタン原子及び
酸素原子の原子層毎の積み重ねや釦、ジルコニラ１＼及
びチタン原子の原子層毎の積み重ね後の酸化処理や、あ
るいは、酸化錯分子、酸化ジルコニウム分子、酸化チタ
ン分子の積層による分子線エピタキシャル法や、あるい
は原子層エピタキシャル法と分子線エピタキシャル法の
混合法によっても形成する事ができる。Furthermore, in the case of j) tosylconium titanate film called p z "V, the stacking of each atomic layer of button, zirconium, titanium atoms and oxygen atoms and the stacking of button, zirconyl 1\ and titanium atoms It can also be formed by oxidation treatment after stacking, or by a molecular beam epitaxial method by stacking oxide complex molecules, zirconium oxide molecules, and titanium oxide molecules, or by a mixed method of atomic layer epitaxial method and molecular beam epitaxial method.
本発明により誘電率か〃：定で、［↓つリーク電流の少
ない、高いストイキオメトり一性を有する誘電体膜及び
強誘電体膜を形成する事ができる効果がある。The present invention has the effect of forming dielectric films and ferroelectric films with a constant dielectric constant, low leakage current, and high stoichiometric uniformity.
第１図は本発明の一実施例を示す誘電体膜の形成方法を
示す図である。
１・・・基板
２・・・シリコン層
３・・・酸素層
り Ｆ
出願人 セイコーエプソン株式会社
代理人 弁理士 上 柳 雅 誉（他１名）−．−４
−−−
へり
句＼FIG. 1 is a diagram showing a method of forming a dielectric film according to an embodiment of the present invention. 1...Substrate 2...Silicon layer 3...Oxygen layer F Applicant Seiko Epson Co., Ltd. Agent Patent attorney Masayoshi Kamiyanagi (1 other person) -. -4
−−− Heli-haiku＼
Claims (2)
等の誘電体膜を原子層エピタキシャル法又は分子線エピ
タキシャル法にて形成する事を特徴とする誘電体膜の形
成方法。(1) A method for forming a dielectric film, characterized in that a dielectric film such as a silicon oxide film or an aluminum oxide film is formed on a substrate by an atomic layer epitaxial method or a molecular beam epitaxial method.
ウム・チタン酸化物膜等の強誘電体膜を原子層エピタキ
シャル法又は分子線エピタキシャル法にて形成する事を
特徴とする誘電体膜の形成方法。(2) Formation of a dielectric film characterized by forming a ferroelectric film such as a barium titanate film or a lead/strontium/titanium oxide film on the substrate using an atomic layer epitaxial method or a molecular beam epitaxial method. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9762988A JPH01270591A (en) | 1988-04-20 | 1988-04-20 | Process for forming dielectric film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9762988A JPH01270591A (en) | 1988-04-20 | 1988-04-20 | Process for forming dielectric film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01270591A true JPH01270591A (en) | 1989-10-27 |
Family
ID=14197468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9762988A Pending JPH01270591A (en) | 1988-04-20 | 1988-04-20 | Process for forming dielectric film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01270591A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1096042A1 (en) * | 1999-10-25 | 2001-05-02 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| KR20020064624A (en) * | 2001-02-02 | 2002-08-09 | 삼성전자 주식회사 | Dielectric layer for semiconductor device and method of fabricating the same |
| KR100451037B1 (en) * | 2000-12-08 | 2004-10-02 | 주식회사 하이닉스반도체 | Method of forming a gate electrode in a semiconductor device |
| JP6980324B1 (en) * | 2021-03-08 | 2021-12-15 | 株式会社クリエイティブコーティングス | Method for manufacturing barium titanate film |
-
1988
- 1988-04-20 JP JP9762988A patent/JPH01270591A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1096042A1 (en) * | 1999-10-25 | 2001-05-02 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| KR100451037B1 (en) * | 2000-12-08 | 2004-10-02 | 주식회사 하이닉스반도체 | Method of forming a gate electrode in a semiconductor device |
| KR20020064624A (en) * | 2001-02-02 | 2002-08-09 | 삼성전자 주식회사 | Dielectric layer for semiconductor device and method of fabricating the same |
| JP6980324B1 (en) * | 2021-03-08 | 2021-12-15 | 株式会社クリエイティブコーティングス | Method for manufacturing barium titanate film |
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