JPH0127015B2 - - Google Patents

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Publication number
JPH0127015B2
JPH0127015B2 JP56067965A JP6796581A JPH0127015B2 JP H0127015 B2 JPH0127015 B2 JP H0127015B2 JP 56067965 A JP56067965 A JP 56067965A JP 6796581 A JP6796581 A JP 6796581A JP H0127015 B2 JPH0127015 B2 JP H0127015B2
Authority
JP
Japan
Prior art keywords
composition
pbzro
temperature
present
porcelain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56067965A
Other languages
Japanese (ja)
Other versions
JPS57183364A (en
Inventor
Masatomo Yonezawa
Tomotoshi Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56067965A priority Critical patent/JPS57183364A/en
Publication of JPS57183364A publication Critical patent/JPS57183364A/en
Publication of JPH0127015B2 publication Critical patent/JPH0127015B2/ja
Granted legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Ceramic Capacitors (AREA)
  • Inorganic Insulating Materials (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は、磁器組成物、特に高誘電率で焼結温
度の低い磁器組成物に関するものである。 従来高誘電率系誘電体として、チタン酸バリウ
ム〔BaTiO3〕を主成分とするものが広く実用化
されていることは周知のとおりである。しかしな
がら、BaTiO3を主成分とするものは焼結温度が
通常1300℃〜1400℃の高温であり、特に積層コン
デンサの場合には、この焼結温度に適した内部電
極として、主成分が白金またはパラジウム等の高
価な貴金属を使用しなければならないという欠点
を有していた。 このため銀、ニツケル等を主成分とする安価な
内部電極を使用可能とするためには、焼結温度が
できるだけ低温、特に1000℃以下の温度で焼結で
きる誘電体が強く要望されていた。 本発明の目的は、1000℃以下の温度で焼結で
き、誘電率が高く、誘電損失が小さく、しかも比
抵抗の高い組成物を提供することにある。 更に本発明の目的は、焼結磁器のの粒径成長を
抑制し、かつ焼結密度を高めて、機械的強度を増
大させ、信頼性の高い積層コンデンサー用組成物
を提供することにある。すなわち、チツプコンデ
ンサの場合は、基板に実装した時の、基板とセラ
ミツクの熱膨張係数の違いにより、チツプコンデ
ンサに機械的な歪がかかり、微少なクラツクの発
生やひどい場合にはチツプコンデンサが破損する
場合が生じる。またエポキシ樹脂等を外装したデ
イツプコンデンサの場合も外装樹脂の応力で磁器
にクラツクを発生させる場合がある。いずれの場
合も磁器の抗折強度が低いほどクラツクが入りや
すく、破損しやすく、信頼性が低くなる。したが
つて、セラミツクの機械的強度をできるだけ増大
させることは実用上、極めて重要なことである。 ところで、1000℃以下の低温で焼結できる磁器
組成物の一つとしてPb(Fe2/3W1/3)O3
PbZrO3からなる二成分組成物は既に提案されて
いる。しかしながら上記二成分物組成物は誘電損
失が高く、しかも比抵抗が低く、より改善が望ま
れていた。このため第三成分としてPb(Mn2/
3W1/3)O3等を添加し、上記欠点を改善する
提案がなされている(特開昭55−23058)。しかし
ながら上記Pb(Fe2/3W1/3)O3―PbZrO3およ
びこれにPb(Mn2/3W1/3)O3等を添加したも
のはいずれも磁器の抗折強度が低く、積層コンデ
ンサ用組成物としての用途は自ら狭い範囲に限定
せざるを得なかつた。 本発明は、Pb(Fe2/3W1/3)O3、PbZrO3
よびPb(Zn1/3Nb2/3)O3からなり、上記欠点
をすべて改良したものである。すなわち、本発明
の三成分系を〔Pb(Fe2/3W1/3)O3X
〔PbZrO3Y(Pb(Zn1/3Nb2/3)O3Zと表わし
たときに、(ただし、X+Y+Z=1.00)配合比
X、Y、Zがこの三成分組成図において(X=
0.792、Y=0.198、Z=0.01)、(X=0.40、Y=
0.10、Z=0.50)、(X=0.25、Y=0.25、Z=
0.50)及び(X=0.495、Y=0.495、Z=0.01)
の4組成点を結ぶ線上並びにこの線の範囲内にあ
ることを特徴とするものであり、1000℃以下の温
度で焼結でき、機械的強度が高く、しかも誘電率
が高く、誘電率の温度変化率が良好で、誘電損失
が小さく、比抵抗も高いという秀れた特性を保持
し、かつ信頼性の高い、量産性に富む材料を提供
するものである。 以下本発明を実施例にて詳細に説明する。 出発原料として、酸化鉛(PbO)、酸化鉄
(Fe2O3)、酸化タングステン(WO3)、酸化ジル
コニウム(ZrO2)、酸化ニオブ(Nb2O5)および
酸化亜鉛を使用し、所定の配合比に秤量する。次
にボールシル中で湿式混合した後700℃〜800℃で
予焼し、その後0.7ton/cm2の圧力で、直径16mm、
厚さ約10mmの円柱状に加圧成形し、800℃〜950℃
で焼結した。 得られた焼結体を切断し、1mmの円板4枚と
0.5mmの円板5枚を得た。1mmの円板の両面に銀
電極を焼付け電気的特性を評価した。誘電率およ
び誘電損失は周波数1kHz、温度20℃で測定した。
絶縁抵抗は50Vの電圧を印加し、1分後、温度20
℃で測定した。 温度特性は、室温20℃を基準として+85℃での
容量変化率を求めた。 機械的性質を抗折強度で評価するため、0.5mm
の円板から巾2mm、長さ約13mmの矩形板を切り出
した。支点間距離を9mmにとり三点法で破壊荷重
Pm〔Kg〕を測定し、γ=3Pml/2Wt2〔Kg/cm2〕 なる式により抗折強度を求めた。ただし、lは支
点間距離、tは試料の厚み、Wは試料の巾であ
る。
The present invention relates to a ceramic composition, particularly a ceramic composition with a high dielectric constant and a low sintering temperature. It is well known that as a conventional high permittivity dielectric material, a material containing barium titanate [BaTiO 3 ] as a main component has been widely put into practical use. However, the sintering temperature of products whose main component is BaTiO 3 is usually between 1300°C and 1400°C, and especially in the case of multilayer capacitors, internal electrodes whose main component is platinum or This method has the disadvantage of requiring the use of expensive noble metals such as palladium. Therefore, in order to make it possible to use inexpensive internal electrodes mainly composed of silver, nickel, etc., there has been a strong demand for a dielectric material that can be sintered at as low a sintering temperature as possible, particularly at a temperature of 1000° C. or lower. An object of the present invention is to provide a composition that can be sintered at a temperature of 1000°C or lower, has a high dielectric constant, low dielectric loss, and high specific resistance. A further object of the present invention is to provide a composition for a multilayer capacitor that suppresses grain size growth of sintered porcelain, increases sintered density, increases mechanical strength, and has high reliability. In other words, when a chip capacitor is mounted on a board, mechanical strain is applied to the chip capacitor due to the difference in thermal expansion coefficient between the board and ceramic, which can cause minute cracks or, in severe cases, damage to the chip capacitor. There are cases where this happens. Furthermore, in the case of dip capacitors coated with epoxy resin or the like, cracks may occur in the porcelain due to the stress of the coated resin. In either case, the lower the bending strength of the porcelain, the more likely it is to crack, break, and become less reliable. Therefore, it is extremely important in practice to increase the mechanical strength of ceramics as much as possible. By the way, Pb(Fe2/3W1/3)O 3 - is one of the porcelain compositions that can be sintered at low temperatures below 1000℃.
Two-component compositions consisting of PbZrO 3 have already been proposed. However, the above two-component composition has a high dielectric loss and a low specific resistance, and further improvement has been desired. Therefore, the third component is Pb (Mn2/
3W1/3) A proposal has been made to improve the above drawbacks by adding O 3 etc. (Japanese Patent Laid-Open No. 55-23058). However, both the above-mentioned Pb(Fe2/3W1/3)O 3 -PbZrO 3 and those to which Pb(Mn2/3W1/3)O 3 etc. are added have low bending strength of porcelain, and are not suitable as compositions for multilayer capacitors. had no choice but to limit its use to a narrow range. The present invention is composed of Pb(Fe2/3W1/3)O 3 , PbZrO 3 and Pb(Zn1/3Nb2/3)O 3 and has improved all the above-mentioned drawbacks. That is, the ternary system of the present invention is [Pb(Fe2/3W1/3)O 3 ]
When expressed as [PbZrO 3 ] Y (Pb(Zn1/3Nb2/3)O 3 ] Z (however, X+Y+Z=1.00), the compounding ratios X, Y, and Z in this ternary composition diagram (X=
0.792, Y=0.198, Z=0.01), (X=0.40, Y=
0.10, Z=0.50), (X=0.25, Y=0.25, Z=
0.50) and (X=0.495, Y=0.495, Z=0.01)
It is characterized by being located on the line connecting the four composition points of The present invention provides a material that maintains excellent properties such as a good rate of change, low dielectric loss, and high specific resistance, is highly reliable, and is easily mass-produced. The present invention will be explained in detail below with reference to Examples. Lead oxide (PbO), iron oxide (Fe 2 O 3 ), tungsten oxide (WO 3 ), zirconium oxide (ZrO 2 ), niobium oxide (Nb 2 O 5 ), and zinc oxide are used as starting materials, and the specified Weigh according to the mixing ratio. Next, after wet mixing in a ball sill, pre-baking at 700℃~800℃, then under a pressure of 0.7ton/ cm2 ,
Pressure molded into a cylindrical shape with a thickness of about 10 mm and heated at 800℃ to 950℃
Sintered with The obtained sintered body was cut into four 1 mm disks.
Five 0.5 mm disks were obtained. Silver electrodes were baked on both sides of a 1 mm disk to evaluate the electrical characteristics. The dielectric constant and dielectric loss were measured at a frequency of 1 kHz and a temperature of 20°C.
For insulation resistance, apply a voltage of 50V, and after 1 minute, the temperature will decrease to 20V.
Measured at °C. Regarding the temperature characteristics, the rate of change in capacity at +85°C was determined based on the room temperature of 20°C. 0.5 mm to evaluate mechanical properties by bending strength
A rectangular plate with a width of 2 mm and a length of about 13 mm was cut out from the disk. Determine the breaking load using the three-point method with a distance between fulcrums of 9 mm.
Pm [Kg] was measured, and the bending strength was determined using the formula: γ=3Pml/2Wt 2 [Kg/cm 2 ]. However, l is the distance between the supporting points, t is the thickness of the sample, and W is the width of the sample.

【表】【table】

【表】 電気的特性は試料4点の平均値、抗折強度は試
料10点の平均値より求めた。このようにして得ら
れた磁器の配合比と諸特性の関係を表及び第1図
〜第6図に示す。図中の横軸はPb(Zn1/3Nb2/
3)O3またはPbZrO3のモル分率を示し、表に示
した組成に該当する部分に表の試料番号を明示し
ている。また図中の曲線aは誘電率、bは誘電損
失、cは比抵抗、dは温度特性、eは抗折強度の
特性を各々示している。 この結果から明らかなように、本発明のPb
(Fe2/3W1/3)O3―PbZrO3―Pb(Zn1/
3Nb2/3)O3からなる三成分系磁器は1000℃以
下の低温で焼結でき、誘電率が高く、その温度特
性が良好で、誘電損失が小さく、比抵抗が高く、
抗折強度が大きい。すなわち優れた特性をもち、
かつ信頼性の高い横層コンデンサ用の高誘電率磁
器組成物が得られることがわかる。 なお本発明の組成物は〔Pb(Fe2/3W1/3)
O3X〔PbZrO3Y〔Pb(Zn1/3Nb2/3)O3Z
表わした時に、第7図に示した如くX、Y、Zが
それぞれ、この三成分組成図において(X=
0.792、Y=0.198、Z=0.01)、(X=0.40、Y=
0.10、Z=0.50)、(X=0.25、Y=0.25、Z=
0.50)及び(X=0.495、Y=0.495、Z=0.01)
の4組成点を結ぶ線上並びにこの線の範囲内に限
定される。尚、第7図中の数字1〜25は表に示し
た試料番号を示している。 X>0.792の範囲と、Y<0.2で本発明の範囲外
の部分ではキユリー温度が実用温度範囲より低
く、X<0.25の範囲とY>0.25で本発明の範囲外
の部分ではキユリー温度が実用温度範囲より高
く、いづれも室温での誘電率が低下する。一方Z
<0.01では抗折強度が低くなり、比抵抗が低下
し、誘電損失が増大する。Z>0.50では誘電損失
が大きくなる。 以上の理由により上記組成範囲に限定される。
[Table] Electrical properties were determined from the average value of 4 samples, and bending strength was determined from the average value of 10 samples. The relationship between the blending ratio and various properties of the porcelain thus obtained is shown in the table and FIGS. 1 to 6. The horizontal axis in the figure is Pb (Zn1/3Nb2/
3) The mole fraction of O 3 or PbZrO 3 is shown, and the sample number in the table is clearly indicated in the part corresponding to the composition shown in the table. Further, in the figure, curve a shows the dielectric constant, b shows the dielectric loss, c shows the specific resistance, d shows the temperature characteristic, and e shows the bending strength. As is clear from this result, the Pb of the present invention
(Fe2/3W1/3)O 3 ―PbZrO 3 ―Pb(Zn1/
The ternary porcelain consisting of 3Nb2/3) O3 can be sintered at low temperatures below 1000℃, has a high dielectric constant, good temperature characteristics, low dielectric loss, high specific resistance,
High bending strength. In other words, it has excellent properties,
It can be seen that a highly reliable high dielectric constant ceramic composition for horizontal layer capacitors can be obtained. The composition of the present invention is [Pb(Fe2/3W1/3)
When expressed as O 3 ] X [PbZrO 3 ] Y [Pb(Zn1/3Nb2/3)O 3 ] Z , as shown in Figure 7, =
0.792, Y=0.198, Z=0.01), (X=0.40, Y=
0.10, Z=0.50), (X=0.25, Y=0.25, Z=
0.50) and (X=0.495, Y=0.495, Z=0.01)
It is limited to the line connecting the four composition points and within the range of this line. Note that the numbers 1 to 25 in FIG. 7 indicate the sample numbers shown in the table. The Curie temperature is lower than the practical temperature range in the range of X>0.792 and the part where Y<0.2 is outside the range of the present invention, and the Kyrie temperature is lower than the practical temperature range in the range of X<0.25 and the part where Y>0.25 is outside the range of the present invention. The dielectric constant at room temperature decreases in both cases. On the other hand Z
When it is <0.01, the bending strength becomes low, the specific resistance decreases, and the dielectric loss increases. When Z>0.50, the dielectric loss becomes large. For the above reasons, the composition is limited to the above composition range.

【図面の簡単な説明】[Brief explanation of drawings]

第1図から第6図までは表の各組成とその特性
の関係を示した図である。図中の曲線のaは誘電
率、bは誘電損失、cは比抵抗、dは温度変化、
eは抗折強度の特性をそれぞれ示している。第7
図は本発明の組成範囲と実施例に示した配合比の
組成点を示す図である。
FIG. 1 to FIG. 6 are diagrams showing the relationship between each composition in the table and its characteristics. In the curve in the figure, a is the dielectric constant, b is the dielectric loss, c is the specific resistance, d is the temperature change,
e indicates the characteristic of bending strength. 7th
The figure shows the composition range of the present invention and the composition points of the compounding ratios shown in the examples.

Claims (1)

【特許請求の範囲】 1 鉄・タングステン酸鉛〔Pb(Fe2/3W1/3)
O3〕、ジルコン酸鉛〔PbZrO3〕および亜鉛・ニ
オブ酸鉛〔Pb(Zn1/3Nb2/3)O3〕からなる三
成分組成物を(Pb(Fe2/3W1/3)O3X
〔PbZrO3Y(Pb(Zn1/3Nb2/3)O3Zと表わし
たときに(ただしX+Y+Z=1.00)、この三成
分組成図において配合比X、Y、Zがそれぞれ
(X=0.792、Y=0.198、Z=0.01)、(X=0.40、
Y=0.10、Z=0.50)、(X=0.25、Y=0.25、Z
=0.50)及び(X=0.495、Y=0.495、Z=0.01)
の4組成点を結ぶ線で囲まれた領域内(線上も含
む)にあることを特徴とする磁器組成物。
[Claims] 1. Iron/lead tungstate [Pb (Fe2/3W1/3)
A ternary composition consisting of lead zirconate [PbZrO 3 ], lead zirconate [PbZrO 3 ], and zinc-lead niobate [Pb(Zn1/3Nb2 / 3)O 3 ] (Pb(Fe2/3W1/3)O 3 )
[PbZrO 3 ] Y (Pb(Zn1/3Nb2/3)O 3 ) When expressed as Z (X+Y+Z=1.00), in this three-component composition diagram, the compounding ratios X, Y, and Z are respectively (X=0.792, Y=0.198, Z=0.01), (X=0.40,
Y=0.10, Z=0.50), (X=0.25, Y=0.25, Z
=0.50) and (X=0.495, Y=0.495, Z=0.01)
A porcelain composition characterized by being located within a region surrounded by a line connecting four composition points (including on the line).
JP56067965A 1981-05-06 1981-05-06 Ceramic composition Granted JPS57183364A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56067965A JPS57183364A (en) 1981-05-06 1981-05-06 Ceramic composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56067965A JPS57183364A (en) 1981-05-06 1981-05-06 Ceramic composition

Publications (2)

Publication Number Publication Date
JPS57183364A JPS57183364A (en) 1982-11-11
JPH0127015B2 true JPH0127015B2 (en) 1989-05-26

Family

ID=13360185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56067965A Granted JPS57183364A (en) 1981-05-06 1981-05-06 Ceramic composition

Country Status (1)

Country Link
JP (1) JPS57183364A (en)

Also Published As

Publication number Publication date
JPS57183364A (en) 1982-11-11

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