JPH01264220A - Reduction projection aligner - Google Patents
Reduction projection alignerInfo
- Publication number
- JPH01264220A JPH01264220A JP63093942A JP9394288A JPH01264220A JP H01264220 A JPH01264220 A JP H01264220A JP 63093942 A JP63093942 A JP 63093942A JP 9394288 A JP9394288 A JP 9394288A JP H01264220 A JPH01264220 A JP H01264220A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- reduction projection
- shot
- substrate
- mountain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 12
- 241000257465 Echinoidea Species 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、LSI製造における縮小投影露光装置に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a reduction projection exposure apparatus for LSI manufacturing.
図2に示したように、縮小投影露光装置ではレジストを
塗布したウェハ(6)上に、レチクルパターンを縮小し
て投影する。投影する面積は、例えばニコン製ステッパ
ーで最大15X15ff”であり、5インチウェハには
30〜40シ讐ツトをステップアンドリピート法で行な
う。オートフォーカスはショットごとにシッット中心に
焦点゛を合わせ、ウェハの厚みに増減があっても、ショ
ットの中心部に焦点が合うようになっている。As shown in FIG. 2, the reduction projection exposure apparatus projects a reduced reticle pattern onto a wafer (6) coated with resist. The projected area is, for example, a maximum of 15 x 15 ff" with a Nikon stepper, and 30 to 40 shots are performed on a 5-inch wafer using the step-and-repeat method. Autofocus focuses on the center of the shot for each shot, and Even if the thickness of the image increases or decreases, the center of the shot remains in focus.
従来の縮小投影露光装置は、第3図に示したように基板
載置台(7)上に異物(5)が付着している場合、ウェ
ハ(6)は真空吸着により異物のある位雪を山頂とする
起伏を描く。焦点が合うのはしラット中心のみであるか
ら中心と周辺に高低差■があると周辺部はデフォーカス
となる。しかもこの轟物の発見はむずかしく、量産時に
は大量の製品がデフォーカぶのまま処理されてしまうと
いう問題点があった。In the conventional reduction projection exposure apparatus, when a foreign object (5) is attached to the substrate mounting table (7) as shown in FIG. Draw the ups and downs. Since only the center of the rat is in focus, if there is a height difference between the center and the periphery, the periphery will be out of focus. Moreover, it was difficult to discover this product, and there was a problem in that during mass production, a large amount of products were processed without being defocused.
この発明は上記のような問題点を解消するためになされ
たもので、オートフォーカス機構を利用し自動的に載置
台の異物を検出できる縮小投影露光装置を得ることを目
的とする。The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a reduction projection exposure apparatus that can automatically detect foreign objects on a mounting table using an autofocus mechanism.
この発明に係る縮小投影露光装置は基板載置台に真空吸
着によって載置された基板の平担度をオートフォーカス
機構を利用して測定し、載置台上の異物を自動検出する
ようにしたものである。The reduction projection exposure apparatus according to the present invention uses an autofocus mechanism to measure the flatness of a substrate placed on a substrate mounting table by vacuum suction, and automatically detects foreign objects on the mounting table. be.
この発明による基板載置台上の異物の自動検出は、ステ
ップアンドリピート法による露光時に、焦点位習の変位
が一定値を越えたときに異物の存在を確認する。The automatic detection of a foreign object on a substrate mounting table according to the present invention confirms the presence of a foreign object when the displacement of the focal point exceeds a certain value during exposure using the step-and-repeat method.
息下、この発明の一実施例を図について説明する。第1
図において(1)は光源、(2)はマスク%(3)は縮
小レンズ、(4)はウニへの高さを検出するオートフォ
ーカス光学系、(5)はウェハチャック上に付着した異
物、(61はウェハ、(7)は真空吸着によりウェハを
固定するウェハチャック、(8)はウニへの高さに合わ
せてチャックを上下させる駆動装置、(9)は異物の無
い場所とある場所に焦点を合わせたときの焦点距離の変
位Δlである。An embodiment of the present invention will now be described with reference to the drawings. 1st
In the figure, (1) is the light source, (2) is the mask percentage, (3) is the reduction lens, (4) is the autofocus optical system that detects the height of the sea urchin, and (5) is the foreign matter attached to the wafer chuck. (61 is a wafer, (7) is a wafer chuck that fixes the wafer by vacuum suction, (8) is a drive device that moves the chuck up and down according to the height of the sea urchin, and (9) is a place where there is no foreign object and a place where there is This is the displacement Δl of the focal length when focusing.
m1図に示すようにウェハチャック(n上に異物(5)
が付!するとウェハ(6)に山が生じる。今回のショッ
ト位置ではオートフォーカス光学系(4)によもウェハ
の平らな部分に焦点を合わせている。次のショットでは
ショット中心にウェハの山があるためにFB駆動装置8
)によりウェハチャック(7)を△lだけ昇降させ焦点
を合わせる。この値△1(9)が規格値δを越えたとき
に異物の存在を認識し、警報を発する。As shown in figure m1, there is a foreign object (5) on the wafer chuck (n).
Attached! Then, a mountain forms on the wafer (6). At this shot position, the autofocus optical system (4) focuses on the flat part of the wafer. In the next shot, there is a mountain of wafers in the center of the shot, so the FB drive device 8
) to raise and lower the wafer chuck (7) by Δl to focus. When this value Δ1 (9) exceeds the standard value δ, the presence of a foreign object is recognized and an alarm is issued.
以上のように、この発明によれば基板載置台上に付着し
た異物をオートフォーカス機構を利用して自動的に検出
できるので、デフォーカスのまま基板を露光することが
ない精度の高い縮小投影露光装置が得られる。As described above, according to the present invention, foreign matter adhering to the substrate mounting table can be automatically detected using the autofocus mechanism, so that highly accurate reduction projection exposure can be performed without exposing the substrate in a defocused state. A device is obtained.
第1図はこの発明の一実施例による縮小投影露光装置の
断面図、第2図は従来の縮小投影露光装置の斜視図であ
る。第3図は従来の縮小投影露光装置の断面図である。
(1]は光源、(2)はマスク、(3)は縮小レンズ、
(4)はオートフォーカス光学系、(5)は異物、f6
’lはウニへ、(7)はウェハチャック、(8)はチャ
ック駆aufi!、(9)は変位△l、αGは投影シ冒
ット、α男は高低差である。
図中同一符号は同一または相当部分を示す。FIG. 1 is a sectional view of a reduction projection exposure apparatus according to an embodiment of the present invention, and FIG. 2 is a perspective view of a conventional reduction projection exposure apparatus. FIG. 3 is a sectional view of a conventional reduction projection exposure apparatus. (1) is a light source, (2) is a mask, (3) is a reduction lens,
(4) is autofocus optical system, (5) is foreign object, f6
'l is for sea urchin, (7) is for wafer chuck, (8) is for chuck aufi! , (9) is the displacement Δl, αG is the projected shot, and α is the height difference. The same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
小投影露光装置において露光時、焦点距離の変化量によ
り基板載置台に付着した異物を自動検出することを特徴
とする縮小投影露光装置A reduction projection exposure apparatus that is equipped with a function to automatically adjust the focal length with the substrate and is characterized in that during exposure, foreign matter attached to the substrate mounting table is automatically detected based on the amount of change in the focal length.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63093942A JPH01264220A (en) | 1988-04-14 | 1988-04-14 | Reduction projection aligner |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63093942A JPH01264220A (en) | 1988-04-14 | 1988-04-14 | Reduction projection aligner |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01264220A true JPH01264220A (en) | 1989-10-20 |
Family
ID=14096488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63093942A Pending JPH01264220A (en) | 1988-04-14 | 1988-04-14 | Reduction projection aligner |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01264220A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020066667A (en) * | 2001-02-13 | 2002-08-21 | 삼성전자 주식회사 | Semiconductor exposure system and method for detecting and warning unevenness of wafer |
US6897949B2 (en) | 1998-10-19 | 2005-05-24 | Canon Kabushiki Kaisha | Exposure apparatus and a device manufacturing method using the same |
JP2007088465A (en) * | 2005-09-20 | 2007-04-05 | Asml Netherlands Bv | Photolithography apparatus, particle inspection system, particle inspection method, and device manufacturing method |
JP2007123872A (en) * | 2005-10-18 | 2007-05-17 | Asml Netherlands Bv | Lithography apparatus |
US8558990B2 (en) | 2010-05-13 | 2013-10-15 | Elpida Memory, Inc. | Method of exposing a semiconductor wafer and exposure apparatus |
-
1988
- 1988-04-14 JP JP63093942A patent/JPH01264220A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6897949B2 (en) | 1998-10-19 | 2005-05-24 | Canon Kabushiki Kaisha | Exposure apparatus and a device manufacturing method using the same |
US7339662B2 (en) | 1998-10-19 | 2008-03-04 | Canon Kabushiki Kaisha | Exposure apparatus and a device manufacturing method using the same |
KR20020066667A (en) * | 2001-02-13 | 2002-08-21 | 삼성전자 주식회사 | Semiconductor exposure system and method for detecting and warning unevenness of wafer |
JP2007088465A (en) * | 2005-09-20 | 2007-04-05 | Asml Netherlands Bv | Photolithography apparatus, particle inspection system, particle inspection method, and device manufacturing method |
JP2007123872A (en) * | 2005-10-18 | 2007-05-17 | Asml Netherlands Bv | Lithography apparatus |
JP4588010B2 (en) * | 2005-10-18 | 2010-11-24 | エーエスエムエル ネザーランズ ビー.ブイ. | Lithographic apparatus |
US8558990B2 (en) | 2010-05-13 | 2013-10-15 | Elpida Memory, Inc. | Method of exposing a semiconductor wafer and exposure apparatus |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4899195A (en) | Method of exposing a peripheral part of wafer | |
EP1039511A1 (en) | Projection exposure method and projection aligner | |
JP2003007608A (en) | Alignment method, aligner, and method of manufacturing device | |
JP3172085B2 (en) | Peripheral exposure equipment | |
JPH09199406A (en) | Position detecting device and manufacture of semiconductor element using thereof | |
US5734462A (en) | Exposure apparatus and exposure method | |
JP2009182334A (en) | Aligner and device manufacturing method | |
JP2001168024A (en) | Aligner and device producing method | |
US7199878B2 (en) | Scan exposure apparatus and method, and device manufacturing method | |
JPH01264220A (en) | Reduction projection aligner | |
JPH1097083A (en) | Projection aligner and its method | |
JP3244783B2 (en) | Alignment apparatus and method, and exposure apparatus and semiconductor device manufacturing method using the same | |
JP2000021768A (en) | Plane position detector and scanning type projection aligner using the detector | |
JPS6022319A (en) | Semiconductor exposure apparatus | |
JP3408118B2 (en) | Projection exposure method and apparatus | |
JP2010206175A (en) | Manufacturing method for semiconductor device | |
JP2000164498A (en) | Scanning projection aligner | |
JPH1140493A (en) | Scanning type alinger and manufacture of device | |
JPH11176726A (en) | Aligning method, lithographic system using the method and method for manufacturing device using the aligning method | |
JPS62114222A (en) | Exposing apparatus | |
JP2003203855A (en) | Exposure method and aligner, and device manufacturing method | |
JP2759898B2 (en) | Focus detection method in film exposure apparatus | |
USH1463H (en) | Method for detecting positions of photomask and substrate | |
JP2946637B2 (en) | Projection exposure method | |
JPH0620923A (en) | Exposing method |