JPH01264220A - Reduction projection aligner - Google Patents

Reduction projection aligner

Info

Publication number
JPH01264220A
JPH01264220A JP63093942A JP9394288A JPH01264220A JP H01264220 A JPH01264220 A JP H01264220A JP 63093942 A JP63093942 A JP 63093942A JP 9394288 A JP9394288 A JP 9394288A JP H01264220 A JPH01264220 A JP H01264220A
Authority
JP
Japan
Prior art keywords
wafer
mountain
substrate stage
foreign body
reduction projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63093942A
Other languages
Japanese (ja)
Inventor
Masashi Osaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63093942A priority Critical patent/JPH01264220A/en
Publication of JPH01264220A publication Critical patent/JPH01264220A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70691Handling of masks or wafers

Abstract

PURPOSE: To obtain a high-accuracy apparatus which does not expose a substrate in a deformed state by automatically detecting a foreign body which has adhered to a substrate stage by referring to a changed amount of a focal distance during an exposure operation.
CONSTITUTION: When a foreign body 5 adheres to a substrate stage 7, a mountain is formed on a wafer 6. At a shot position of this time, a flat part of the wafer is in focus by means of an autofocus optical system 4. At a next shot operation, a wafer chuck 7 is raised or lowered by Δl by using a driving gear 8 because the mountain of the wafer is situated in the center of this shot operation. When this value Δl exceeds a standard value δ, the existence of the foreign substance is recognized and an alarm is given.
COPYRIGHT: (C)1989,JPO&Japio
JP63093942A 1988-04-14 1988-04-14 Reduction projection aligner Pending JPH01264220A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63093942A JPH01264220A (en) 1988-04-14 1988-04-14 Reduction projection aligner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63093942A JPH01264220A (en) 1988-04-14 1988-04-14 Reduction projection aligner

Publications (1)

Publication Number Publication Date
JPH01264220A true JPH01264220A (en) 1989-10-20

Family

ID=14096488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63093942A Pending JPH01264220A (en) 1988-04-14 1988-04-14 Reduction projection aligner

Country Status (1)

Country Link
JP (1) JPH01264220A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020066667A (en) * 2001-02-13 2002-08-21 삼성전자 주식회사 Semiconductor exposure system and method for detecting and warning unevenness of wafer
US6897949B2 (en) 1998-10-19 2005-05-24 Canon Kabushiki Kaisha Exposure apparatus and a device manufacturing method using the same
JP2007088465A (en) * 2005-09-20 2007-04-05 Asml Netherlands Bv Photolithography apparatus, particle inspection system, particle inspection method, and device manufacturing method
JP2007123872A (en) * 2005-10-18 2007-05-17 Asml Netherlands Bv Lithography apparatus
US8558990B2 (en) 2010-05-13 2013-10-15 Elpida Memory, Inc. Method of exposing a semiconductor wafer and exposure apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897949B2 (en) 1998-10-19 2005-05-24 Canon Kabushiki Kaisha Exposure apparatus and a device manufacturing method using the same
US7339662B2 (en) 1998-10-19 2008-03-04 Canon Kabushiki Kaisha Exposure apparatus and a device manufacturing method using the same
KR20020066667A (en) * 2001-02-13 2002-08-21 삼성전자 주식회사 Semiconductor exposure system and method for detecting and warning unevenness of wafer
JP2007088465A (en) * 2005-09-20 2007-04-05 Asml Netherlands Bv Photolithography apparatus, particle inspection system, particle inspection method, and device manufacturing method
JP2007123872A (en) * 2005-10-18 2007-05-17 Asml Netherlands Bv Lithography apparatus
JP4588010B2 (en) * 2005-10-18 2010-11-24 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus
US8558990B2 (en) 2010-05-13 2013-10-15 Elpida Memory, Inc. Method of exposing a semiconductor wafer and exposure apparatus

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