JPH01264220A - Reduction projection aligner - Google Patents

Reduction projection aligner

Info

Publication number
JPH01264220A
JPH01264220A JP63093942A JP9394288A JPH01264220A JP H01264220 A JPH01264220 A JP H01264220A JP 63093942 A JP63093942 A JP 63093942A JP 9394288 A JP9394288 A JP 9394288A JP H01264220 A JPH01264220 A JP H01264220A
Authority
JP
Japan
Prior art keywords
wafer
reduction projection
shot
substrate
mountain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63093942A
Other languages
Japanese (ja)
Inventor
Masashi Osaka
昌史 大坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63093942A priority Critical patent/JPH01264220A/en
Publication of JPH01264220A publication Critical patent/JPH01264220A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a high-accuracy apparatus which does not expose a substrate in a deformed state by automatically detecting a foreign body which has adhered to a substrate stage by referring to a changed amount of a focal distance during an exposure operation. CONSTITUTION:When a foreign body 5 adheres to a substrate stage 7, a mountain is formed on a wafer 6. At a shot position of this time, a flat part of the wafer is in focus by means of an autofocus optical system 4. At a next shot operation, a wafer chuck 7 is raised or lowered by DELTAl by using a driving gear 8 because the mountain of the wafer is situated in the center of this shot operation. When this value DELTAl exceeds a standard value delta, the existence of the foreign substance is recognized and an alarm is given.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、LSI製造における縮小投影露光装置に関
するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a reduction projection exposure apparatus for LSI manufacturing.

〔従来の技術〕[Conventional technology]

図2に示したように、縮小投影露光装置ではレジストを
塗布したウェハ(6)上に、レチクルパターンを縮小し
て投影する。投影する面積は、例えばニコン製ステッパ
ーで最大15X15ff”であり、5インチウェハには
30〜40シ讐ツトをステップアンドリピート法で行な
う。オートフォーカスはショットごとにシッット中心に
焦点゛を合わせ、ウェハの厚みに増減があっても、ショ
ットの中心部に焦点が合うようになっている。
As shown in FIG. 2, the reduction projection exposure apparatus projects a reduced reticle pattern onto a wafer (6) coated with resist. The projected area is, for example, a maximum of 15 x 15 ff" with a Nikon stepper, and 30 to 40 shots are performed on a 5-inch wafer using the step-and-repeat method. Autofocus focuses on the center of the shot for each shot, and Even if the thickness of the image increases or decreases, the center of the shot remains in focus.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の縮小投影露光装置は、第3図に示したように基板
載置台(7)上に異物(5)が付着している場合、ウェ
ハ(6)は真空吸着により異物のある位雪を山頂とする
起伏を描く。焦点が合うのはしラット中心のみであるか
ら中心と周辺に高低差■があると周辺部はデフォーカス
となる。しかもこの轟物の発見はむずかしく、量産時に
は大量の製品がデフォーカぶのまま処理されてしまうと
いう問題点があった。
In the conventional reduction projection exposure apparatus, when a foreign object (5) is attached to the substrate mounting table (7) as shown in FIG. Draw the ups and downs. Since only the center of the rat is in focus, if there is a height difference between the center and the periphery, the periphery will be out of focus. Moreover, it was difficult to discover this product, and there was a problem in that during mass production, a large amount of products were processed without being defocused.

この発明は上記のような問題点を解消するためになされ
たもので、オートフォーカス機構を利用し自動的に載置
台の異物を検出できる縮小投影露光装置を得ることを目
的とする。
The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a reduction projection exposure apparatus that can automatically detect foreign objects on a mounting table using an autofocus mechanism.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係る縮小投影露光装置は基板載置台に真空吸
着によって載置された基板の平担度をオートフォーカス
機構を利用して測定し、載置台上の異物を自動検出する
ようにしたものである。
The reduction projection exposure apparatus according to the present invention uses an autofocus mechanism to measure the flatness of a substrate placed on a substrate mounting table by vacuum suction, and automatically detects foreign objects on the mounting table. be.

〔作用〕[Effect]

この発明による基板載置台上の異物の自動検出は、ステ
ップアンドリピート法による露光時に、焦点位習の変位
が一定値を越えたときに異物の存在を確認する。
The automatic detection of a foreign object on a substrate mounting table according to the present invention confirms the presence of a foreign object when the displacement of the focal point exceeds a certain value during exposure using the step-and-repeat method.

〔発明の実施例〕[Embodiments of the invention]

息下、この発明の一実施例を図について説明する。第1
図において(1)は光源、(2)はマスク%(3)は縮
小レンズ、(4)はウニへの高さを検出するオートフォ
ーカス光学系、(5)はウェハチャック上に付着した異
物、(61はウェハ、(7)は真空吸着によりウェハを
固定するウェハチャック、(8)はウニへの高さに合わ
せてチャックを上下させる駆動装置、(9)は異物の無
い場所とある場所に焦点を合わせたときの焦点距離の変
位Δlである。
An embodiment of the present invention will now be described with reference to the drawings. 1st
In the figure, (1) is the light source, (2) is the mask percentage, (3) is the reduction lens, (4) is the autofocus optical system that detects the height of the sea urchin, and (5) is the foreign matter attached to the wafer chuck. (61 is a wafer, (7) is a wafer chuck that fixes the wafer by vacuum suction, (8) is a drive device that moves the chuck up and down according to the height of the sea urchin, and (9) is a place where there is no foreign object and a place where there is This is the displacement Δl of the focal length when focusing.

m1図に示すようにウェハチャック(n上に異物(5)
が付!するとウェハ(6)に山が生じる。今回のショッ
ト位置ではオートフォーカス光学系(4)によもウェハ
の平らな部分に焦点を合わせている。次のショットでは
ショット中心にウェハの山があるためにFB駆動装置8
)によりウェハチャック(7)を△lだけ昇降させ焦点
を合わせる。この値△1(9)が規格値δを越えたとき
に異物の存在を認識し、警報を発する。
As shown in figure m1, there is a foreign object (5) on the wafer chuck (n).
Attached! Then, a mountain forms on the wafer (6). At this shot position, the autofocus optical system (4) focuses on the flat part of the wafer. In the next shot, there is a mountain of wafers in the center of the shot, so the FB drive device 8
) to raise and lower the wafer chuck (7) by Δl to focus. When this value Δ1 (9) exceeds the standard value δ, the presence of a foreign object is recognized and an alarm is issued.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば基板載置台上に付着し
た異物をオートフォーカス機構を利用して自動的に検出
できるので、デフォーカスのまま基板を露光することが
ない精度の高い縮小投影露光装置が得られる。
As described above, according to the present invention, foreign matter adhering to the substrate mounting table can be automatically detected using the autofocus mechanism, so that highly accurate reduction projection exposure can be performed without exposing the substrate in a defocused state. A device is obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例による縮小投影露光装置の
断面図、第2図は従来の縮小投影露光装置の斜視図であ
る。第3図は従来の縮小投影露光装置の断面図である。 (1]は光源、(2)はマスク、(3)は縮小レンズ、
(4)はオートフォーカス光学系、(5)は異物、f6
’lはウニへ、(7)はウェハチャック、(8)はチャ
ック駆aufi!、(9)は変位△l、αGは投影シ冒
ット、α男は高低差である。 図中同一符号は同一または相当部分を示す。
FIG. 1 is a sectional view of a reduction projection exposure apparatus according to an embodiment of the present invention, and FIG. 2 is a perspective view of a conventional reduction projection exposure apparatus. FIG. 3 is a sectional view of a conventional reduction projection exposure apparatus. (1) is a light source, (2) is a mask, (3) is a reduction lens,
(4) is autofocus optical system, (5) is foreign object, f6
'l is for sea urchin, (7) is for wafer chuck, (8) is for chuck aufi! , (9) is the displacement Δl, αG is the projected shot, and α is the height difference. The same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims]  基板との焦点距離を自動的に合わせる機能を備えた縮
小投影露光装置において露光時、焦点距離の変化量によ
り基板載置台に付着した異物を自動検出することを特徴
とする縮小投影露光装置
A reduction projection exposure apparatus that is equipped with a function to automatically adjust the focal length with the substrate and is characterized in that during exposure, foreign matter attached to the substrate mounting table is automatically detected based on the amount of change in the focal length.
JP63093942A 1988-04-14 1988-04-14 Reduction projection aligner Pending JPH01264220A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63093942A JPH01264220A (en) 1988-04-14 1988-04-14 Reduction projection aligner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63093942A JPH01264220A (en) 1988-04-14 1988-04-14 Reduction projection aligner

Publications (1)

Publication Number Publication Date
JPH01264220A true JPH01264220A (en) 1989-10-20

Family

ID=14096488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63093942A Pending JPH01264220A (en) 1988-04-14 1988-04-14 Reduction projection aligner

Country Status (1)

Country Link
JP (1) JPH01264220A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020066667A (en) * 2001-02-13 2002-08-21 삼성전자 주식회사 Semiconductor exposure system and method for detecting and warning unevenness of wafer
US6897949B2 (en) 1998-10-19 2005-05-24 Canon Kabushiki Kaisha Exposure apparatus and a device manufacturing method using the same
JP2007088465A (en) * 2005-09-20 2007-04-05 Asml Netherlands Bv Photolithography apparatus, particle inspection system, particle inspection method, and device manufacturing method
JP2007123872A (en) * 2005-10-18 2007-05-17 Asml Netherlands Bv Lithography apparatus
US8558990B2 (en) 2010-05-13 2013-10-15 Elpida Memory, Inc. Method of exposing a semiconductor wafer and exposure apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897949B2 (en) 1998-10-19 2005-05-24 Canon Kabushiki Kaisha Exposure apparatus and a device manufacturing method using the same
US7339662B2 (en) 1998-10-19 2008-03-04 Canon Kabushiki Kaisha Exposure apparatus and a device manufacturing method using the same
KR20020066667A (en) * 2001-02-13 2002-08-21 삼성전자 주식회사 Semiconductor exposure system and method for detecting and warning unevenness of wafer
JP2007088465A (en) * 2005-09-20 2007-04-05 Asml Netherlands Bv Photolithography apparatus, particle inspection system, particle inspection method, and device manufacturing method
JP2007123872A (en) * 2005-10-18 2007-05-17 Asml Netherlands Bv Lithography apparatus
JP4588010B2 (en) * 2005-10-18 2010-11-24 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus
US8558990B2 (en) 2010-05-13 2013-10-15 Elpida Memory, Inc. Method of exposing a semiconductor wafer and exposure apparatus

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