JPH01259158A - Method for improving durability of electrode tip - Google Patents
Method for improving durability of electrode tipInfo
- Publication number
- JPH01259158A JPH01259158A JP8612988A JP8612988A JPH01259158A JP H01259158 A JPH01259158 A JP H01259158A JP 8612988 A JP8612988 A JP 8612988A JP 8612988 A JP8612988 A JP 8612988A JP H01259158 A JPH01259158 A JP H01259158A
- Authority
- JP
- Japan
- Prior art keywords
- welding
- nitride
- carbide
- electrode tip
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 9
- 238000003466 welding Methods 0.000 claims abstract description 38
- 239000000919 ceramic Substances 0.000 claims abstract description 10
- 150000004767 nitrides Chemical class 0.000 claims abstract description 10
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 7
- 238000007733 ion plating Methods 0.000 claims abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 3
- 239000000956 alloy Substances 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052796 boron Inorganic materials 0.000 claims abstract 2
- 239000011195 cermet Substances 0.000 claims abstract 2
- 229910052804 chromium Inorganic materials 0.000 claims abstract 2
- 229910052878 cordierite Inorganic materials 0.000 claims abstract 2
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims abstract 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052839 forsterite Inorganic materials 0.000 claims abstract 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052863 mullite Inorganic materials 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract 2
- 229910052719 titanium Inorganic materials 0.000 claims abstract 2
- 229910052882 wollastonite Inorganic materials 0.000 claims abstract 2
- 239000010456 wollastonite Substances 0.000 claims abstract 2
- 229910052845 zircon Inorganic materials 0.000 claims abstract 2
- 229910052726 zirconium Inorganic materials 0.000 claims abstract 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 239000010937 tungsten Substances 0.000 claims description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 150000001247 metal acetylides Chemical class 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 20
- 239000002184 metal Substances 0.000 abstract description 19
- 239000000945 filler Substances 0.000 abstract description 7
- 239000011261 inert gas Substances 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 3
- 238000005520 cutting process Methods 0.000 abstract description 2
- 239000002904 solvent Substances 0.000 abstract 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 239000000047 product Substances 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 description 6
- 239000001569 carbon dioxide Substances 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 5
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 4
- 239000013065 commercial product Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 4
- -1 hafnium nitride Chemical class 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000003763 carbonization Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 239000010802 sludge Substances 0.000 description 3
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910026551 ZrC Inorganic materials 0.000 description 2
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- SKKMWRVAJNPLFY-UHFFFAOYSA-N azanylidynevanadium Chemical compound [V]#N SKKMWRVAJNPLFY-UHFFFAOYSA-N 0.000 description 2
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- 229910003470 tongbaite Inorganic materials 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 241001414489 Hyas Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- WDEOTCWPXLWTRP-UHFFFAOYSA-N [C+4].[O-2].[Al+3] Chemical compound [C+4].[O-2].[Al+3] WDEOTCWPXLWTRP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0205—Non-consumable electrodes; C-electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Arc Welding In General (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
この方法は、金属の溶接及び切断時に於ける電極チップ
の消耗、劣化防止に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> This method relates to prevention of wear and deterioration of electrode tips during welding and cutting of metals.
〈従来の技術〉
従来、溶接については高品質、自動化、の要求に対応し
て、色々な方法が採られて来た。最も一般的な被覆アー
ク溶接棒を用いた金属アーク溶接は、融接する金属心線
に被覆線を塗付し、アークの安定をはかったもので、さ
らに被覆剤によって空気中の酸素・窒素・水素の害を除
き、溶接金属の性質を改善する作用を持たせ、被覆アー
ク溶接棒の改良・発達によって、従来きわめて困難とさ
れていた特殊鋼や特殊金属などの溶接も可能とした。さ
らに、昨今、不活性ガスや炭酸ガスなどのガスを用いて
、アークを包みなから空気を遮断し溶接する不活化ガス
溶接法や炭酸ガス溶接法などが開発され高速・高能率な
溶接が可能になった。<Prior Art> Conventionally, various methods have been adopted for welding in response to demands for high quality and automation. In metal arc welding using the most common coated arc welding rod, a coated wire is applied to the metal core wire to be fusion welded to stabilize the arc. The improvement and development of coated arc welding rods has made it possible to weld special steels and special metals, which had previously been considered extremely difficult. Furthermore, recently, inert gas welding methods and carbon dioxide welding methods have been developed that use gases such as inert gases and carbon dioxide gas to weld by enclosing the arc but blocking air, making it possible to perform high-speed and highly efficient welding. Became.
〈発明が解決しようとする問題点〉
しかしながら、高速・高能率化に伴い、使用アークも強
力なものが使われるようになり、溶接ノズル及び電極チ
ップの溶解または摩耗による消耗及 □びスパッタ金属
粒の付着によるガス流の乱れ、チップからの溶加材の均
一な供給が損なわれることによる連続的な高品質溶接が
出来な(なる、という問題が未解決であった。<Problems to be solved by the invention> However, as speeds and efficiency increase, more powerful arcs are used, leading to wear and tear due to melting or abrasion of welding nozzles and electrode tips, and spattered metal particles. The problem of continuous high-quality welding being impossible due to the turbulence of the gas flow due to adhesion and the impairing the uniform supply of filler metal from the chip has remained unresolved.
く問題解決のための手段〉
そこで本発明者らは、上記問題点を解決するために、高
耐摩耗性であるセラミックの細いパイプを、電極チップ
先端に埋め込み、溶加材としての溶接ワイヤーによるチ
ップの摩耗を防止、更にドライコーティング法によって
、溶接電極チップ表面に高耐熱性で、溶解金属に濡れに
くい金属及び金属の窒化物や炭化物で構成される薄膜を
形成する事を思い付き鋭意研究した結果、スパッタリン
グ、イオンプレーティング、プラズマCVD法で薄膜を
形成した場合、上記問題点を解決出来ることを見いだし
本発明は完成した。 即ち、本発明の方法は金属製電導
体チップの先端に、セラミックス製のパイプを埋め込み
表面にハフニウム、タンタル、タングステン、窒化ホウ
素、窒化アルミニュウム、窒化ケイ素、窒化チタン、窒
化バナジウム、窒化クロム、窒化ジルコニウム、窒化ハ
フニウム、窒化タンタル、窒化タングステン及び炭化ア
ルミ、炭化ケイ素、炭化チタン、炭化バナジウム、炭化
クロム、炭化ジルコニウム1、炭化ハフニウム、炭化タ
ンタル、炭化タングステン、及び上記金属元素の合金組
成の窒化物または、炭化物を0.1〜10μmの厚さに
ドライコートすることによって耐熱・耐摩耗のスパッタ
付着防止効果の大きい被覆を形成することによる、電極
チップの耐久性向上を果たした。In order to solve the above problems, the present inventors embedded a thin ceramic pipe with high wear resistance at the tip of the electrode tip and used a welding wire as a filler metal. As a result of intensive research, we came up with the idea of preventing tip wear and using a dry coating method to form a thin film on the surface of the welding electrode tip that is highly heat resistant and difficult to wet with molten metal, and is composed of metals and metal nitrides and carbides. The present invention has been completed by discovering that the above problems can be solved when a thin film is formed by sputtering, ion plating, or plasma CVD. That is, the method of the present invention embeds a ceramic pipe at the tip of a metal conductor chip and fills the surface with hafnium, tantalum, tungsten, boron nitride, aluminum nitride, silicon nitride, titanium nitride, vanadium nitride, chromium nitride, zirconium nitride. , hafnium nitride, tantalum nitride, tungsten nitride and aluminum carbide, silicon carbide, titanium carbide, vanadium carbide, chromium carbide, zirconium carbide 1, hafnium carbide, tantalum carbide, tungsten carbide, and nitrides having an alloy composition of the above metal elements, or By dry coating the carbide to a thickness of 0.1 to 10 μm, a heat-resistant, abrasion-resistant coating with a large sputter adhesion prevention effect is formed, thereby improving the durability of the electrode chip.
以上の発明について、より詳細に説明する。−般的にク
ロム銅合金で構成される電極チップ先端の溶加材ワイヤ
ー供給穴に、セラミックスで作られたパイプを埋め込む
。セラミックスパイプの穴内径として、使用する溶加材
ワイヤー直径の100〜115%のものを用いる。10
0%以下ではワイヤーの供給が抵抗なく行われず、11
5%以上では、溶接しようとする位置に、正確に溶加材
ワイヤーを供給することが出来なくなる。セラミックス
の肉厚は0.5mm以上あれば良く、長さにおいても1
.0〜5.0mmあれば十分である。肉厚0.5闘以下
では、耐久性に問題を残し、またセラミックスパイプ製
造においてコストがかかる欠陥がある。長さにおいても
i、0mm以下では強度的に不十分で、5.0−以上で
は溶加材ワイヤーと電極チップとの通電性が阻害される
。このセラミックスバイブ埋め込み電極チップに被覆す
るため表面を清浄化する、一般的にはトリクレン、トリ
フロン、トリエタン等の有機溶剤を用いて油゛脂類の除
去を行い、次いで、真空容器のなかでアルボガスなどの
不活性ガスにてプラズマ洗浄を行い、表面を活性化し、
被覆にあてる。 被覆はスパッタリング、イオンプレー
ティング、プラズマCVDのいずれの方法でも良く、密
着の高い被覆を得ることが出来る。コーテイング膜の膜
厚については、0.1μm以下では耐熱、スパッタ防止
などにたいする効果が十分得られず、10μm以4以
上では、膜の内部応力の蓄積による膜質の低下及び着膜
の為に時間を要し生産性に問題を生ずる、スパッタリン
グ条件は、通常真空度1×10〜3XIOtorr、ア
ルゴン圧 1×10〜1×l□ torrs電圧35
0〜550■、放電電流10〜100Aである。真空度
がlXl0 torr未満では、真空度の到達に時間
を要し生産゛−4
性に問題を生じ、axio torrを超えるとスパ
ッタ膜の色調が暗色化し、膜組成に酸素を含み望ましく
ない。 アルゴン圧が、lXl0 torr未満では
、放電維持が困難となり、IXIQ−” t o r
rを超えると良質のスパッタ膜を得難い。電圧が、35
0■未満では放電が不安定となり、550■を超えると
電流効率が低下して生産性に問題を生じる。The above invention will be explained in more detail. - A pipe made of ceramic is embedded in the filler wire supply hole at the tip of the electrode tip, which is generally made of a chromium-copper alloy. The inner diameter of the hole in the ceramic pipe is 100 to 115% of the diameter of the filler wire used. 10
If it is less than 0%, the wire will not be supplied without resistance, and 11
If it exceeds 5%, it becomes impossible to accurately supply the filler metal wire to the position to be welded. The thickness of the ceramic should be at least 0.5 mm, and the length should also be 1.
.. 0 to 5.0 mm is sufficient. If the wall thickness is less than 0.5mm, there will be problems with durability and there will be defects that increase costs in ceramic pipe manufacturing. In terms of length, if i is less than 0 mm, the strength is insufficient, and if it is more than 5.0 mm, the electrical conductivity between the filler metal wire and the electrode tip is inhibited. In order to coat this ceramic vibe embedded electrode chip, the surface is cleaned. Generally, oil and fat are removed using an organic solvent such as trichlene, triflon, or triethane, and then arbogas etc. are removed in a vacuum container. Perform plasma cleaning with inert gas to activate the surface,
Apply to the coating. The coating may be performed by sputtering, ion plating, or plasma CVD, and a coating with high adhesion can be obtained. Regarding the film thickness of the coating film, if it is less than 0.1 μm, sufficient effects such as heat resistance and spatter prevention cannot be obtained, and if it is 10 μm or more, the film quality will deteriorate due to the accumulation of internal stress in the film, and it will take time to deposit the film. The sputtering conditions that cause problems in productivity are usually a vacuum level of 1 x 10 to 3 x IO torr, an argon pressure of 1 x 10 to 1 x 1 torr, and a voltage of 35 torr.
0 to 550 cm, and a discharge current of 10 to 100 A. If the degree of vacuum is less than 1X10 torr, it takes time to reach the degree of vacuum, which causes problems in productivity, and if it exceeds axio torr, the color tone of the sputtered film becomes dark and the film composition contains oxygen, which is undesirable. If the argon pressure is less than 1X10 torr, it will be difficult to maintain the discharge, and IXIQ-" torr
If it exceeds r, it will be difficult to obtain a good quality sputtered film. The voltage is 35
If it is less than 0■, the discharge becomes unstable, and if it exceeds 550■, the current efficiency decreases, causing problems in productivity.
放電電流がIOA未満では、放電が不安定となり100
Aを超えるとスパッタ膜の膜厚がバラツキやすくなる。If the discharge current is less than IOA, the discharge will become unstable and 100%
If it exceeds A, the thickness of the sputtered film tends to vary.
・ ′
また、スパッタリングに際し、使用するターゲットの種
類によって高周波(13,56MHz)電流を用いる事
も出来る。また、反応性スバ、タリングにおいて窒化物
・炭化物を着膜させるためには、反応性ガスをスパック
圧に対し101〜1:1の分圧とし、スパンタソングす
る。−船釣に窒化の場合には、反応ガスとして窒素カス
及びアンモニアカスを用い、炭化の場合には、アセチレ
ンカスを用いた。・' Also, during sputtering, high frequency (13, 56 MHz) current can be used depending on the type of target used. In addition, in order to deposit nitrides and carbides in reactive spacing and taring, the reactive gas is made to have a partial pressure of 101 to 1:1 with respect to the spack pressure, and is subjected to spantasong. - In the case of nitriding on a boat, nitrogen sludge and ammonia sludge were used as the reaction gas, and in the case of carbonization, acetylene sludge was used.
イオンプレーティングの条件は、蒸発源として電子ビー
ムを用い、カス圧(窒化 窒素、炭化:ハイアス 30
0V〜1500Vにて行った。The conditions for ion plating are as follows: an electron beam is used as the evaporation source, and the gas pressure (nitride, carbonization: Hyas 30
The voltage was 0V to 1500V.
プラズマCVDの条件は、真空度1×10torr、カ
ス圧 5XIQ torr RfIKw (13,
56M) 、処理温度 400’C1使用カスは、4塩
化チタン、4水素化ケイ素、アーI−L/ン、アンモニ
アをモチイタ。The conditions for plasma CVD are: vacuum level 1 x 10 torr, gas pressure 5 x IQ torr RfIKw (13,
56M), treatment temperature 400'C1 The residue used was moiety of titanium tetrachloride, silicon tetrahydride, aluminum, and ammonia.
〈実施例■〉
市販の炭酸ガスアーク溶接用電極チップの先端穴に、ア
ルミナで出来た内径 1.25mm、外径2.25mm
、長さ3 mmのパイプを嵌め込んだ電極チップを用い
て、 高融点金属である、ハフニウム、タンタル及びタ
ングステンのコーティングをDCマグネトロンスパッタ
リングにて被覆する。<Example ■> The tip hole of a commercially available carbon dioxide arc welding electrode tip was made of alumina and had an inner diameter of 1.25 mm and an outer diameter of 2.25 mm.
A coating of high melting point metals such as hafnium, tantalum and tungsten is applied by DC magnetron sputtering using an electrode tip fitted with a 3 mm long pipe.
その膜厚は5μmで以下のスパッタリング条件S
にて形成した。 真空度lXl0 torr、スバッ
タリングアルゴン圧5X10 torr、放電電圧D
C450V、放電電流2OA、この金属被覆トーチと一
般市販品に於いて溶接試験を行った。自動溶接機にて溶
接電流25OA、毎分2゜5メートルの溶接速度で溶接
する、電極チップの交換まてに溶接出来た溶接ワイヤー
(1,2mmDS−1)の重量で評価した
被 覆 ワイヤー重量
ブランク(市販品) 6Kgタングステン被
覆品 56Kg
タンタル 被覆品 58Kg
ハフニウム 被覆品 65Kg
この結果に於いて明らかなように、本発明による改良製
品は、従来品に比べ著しく寿命が優れていることが分か
る。The film thickness was 5 μm and was formed under the following sputtering conditions S. Vacuum degree 1X10 torr, sputtering argon pressure 5X10 torr, discharge voltage D
A welding test was conducted at C450V and a discharge current of 2OA using this metal-coated torch and a commercially available torch. Welding was performed using an automatic welding machine at a welding current of 25 OA and a welding speed of 2.5 meters per minute.Coating wire weight evaluated based on the weight of welding wire (1.2 mm DS-1) that could be welded before replacing the electrode tip. Blank (commercial product) 6Kg Tungsten coated product 56Kg Tantalum coated product 58Kg Hafnium coated product 65Kg As is clear from these results, it can be seen that the improved product according to the present invention has a significantly longer life than the conventional product.
〈実施例■〉
市販の炭酸ガスアーク溶接用電極チップの先端穴に、ア
ルミナで出来た、内径125mm、外径2.25mm、
長さ3 mmのパイプを嵌め込んだ電極チップを用いて
、反応性スパッタリング(反応性ガスの分圧は、窒素ま
たはアセチレンを用い3×10 torrにて被覆)
によって、以下の窒化物・炭化物を2μmの厚みに被覆
し、溶接試験に供した。 溶接試験は、 自動溶接機に
て250A、2.5m/分、 1.2mmDS−1
をもちいてチップ交換までに処理出来たワイヤー重量に
て比較した。<Example ■> The tip hole of a commercially available carbon dioxide gas arc welding electrode tip was made of alumina and had an inner diameter of 125 mm and an outer diameter of 2.25 mm.
Reactive sputtering using an electrode tip fitted with a 3 mm long pipe (the partial pressure of the reactive gas was 3 x 10 torr using nitrogen or acetylene).
The following nitride/carbide was coated with a thickness of 2 μm and subjected to a welding test. The welding test was performed using an automatic welding machine at 250A, 2.5m/min, 1.2mmDS-1.
We compared the weight of wire that could be processed before replacing the tip using the .
被 覆 ワイヤー重量
ブランク(市販品) 6Kg
窒化ホウ素 53Kg
窒化アルミニウム 48Kg
窒化チタン 25Kg
窒化バナジウム 27Kg
窒化クロム 22Kg
窒化ジルコニウム 30Kg
窒化ハフニウム 42Kg
窒化タンタル 38Kg
窒化タングステン 34Kg
炭化ホウ素 58Kg
炭化アルミニウム 42Kg
炭化ケイ素 58Kg
炭化チタン 45Kg
炭化バナジウム 39Kg
炭化クロム 34 K g炭化ジルコニウ
ム 42Kg
炭化ハフニウム 53Kg
炭化タンタル 58Kg
炭化タングステン 47Kg
窒化・Ti、AI、V 38Kg
窒化・Ti、AI 41Kg
本発明による被覆製品は、無被覆の従来品に比へ著しい
効果を示し優れている。Covering Wire weight blank (commercially available) 6Kg Boron nitride 53Kg Aluminum nitride 48Kg Titanium nitride 25Kg Vanadium nitride 27Kg Chromium nitride 22Kg Zirconium nitride 30Kg Hafnium nitride 42Kg Tantalum nitride 38Kg Tungsten nitride 34Kg Boron carbide 58Kg Carbon Aluminum oxide 42Kg Silicon carbide 58Kg Titanium carbide 45Kg Carbonization Vanadium 39Kg Chromium carbide 34Kg Zirconium carbide 42Kg Hafnium carbide 53Kg Tantalum carbide 58Kg Tungsten carbide 47Kg Nitride/Ti, AI, V 38Kg Nitride/Ti, AI 41Kg The coated product according to the present invention has a remarkable effect over conventional uncoated products. Shows excellent results.
〈実施例■〉
市販の炭酸ガスア−り溶接用電極チップの先端穴に、ア
ルミナで出来た、内径125mm、外径2.25mm、
長さ3Mのパイプを嵌め込んだ電極チップに高周波プラ
ズマCVDによって以下の被覆を行い、溶接試験に供し
た。CVDの条件は、キャリアガスに水素を用い四水素
化ケイ素、または、四塩化チタンをバブリングしたもの
と、アセチレンまたはアンモニアを、1:1の比率で混
合し、CVDガス圧5xlQ torr、Rf :
IKw、処理温度400’Cにて膜厚3μmに被覆した
。溶接試験条件は、自動溶接にて250A、溶接速度2
.5m/min、1.2mmDS−1ワイヤー使用、チ
ップ更新までに溶接出来たワイヤー重量を比較した。<Example ■> The tip hole of a commercially available carbon dioxide gas arc welding electrode tip was made of alumina and had an inner diameter of 125 mm and an outer diameter of 2.25 mm.
An electrode tip fitted with a 3M long pipe was coated with the following coating by high frequency plasma CVD and subjected to a welding test. The CVD conditions were as follows: using hydrogen as a carrier gas, bubbling silicon tetrahydride or titanium tetrachloride, and acetylene or ammonia at a ratio of 1:1, CVD gas pressure 5xlQ torr, Rf:
It was coated to a film thickness of 3 μm at IKw and treatment temperature of 400'C. Welding test conditions were automatic welding at 250A and welding speed at 2.
.. 5m/min, 1.2mm DS-1 wire was used, and the weight of the wire that could be welded before the tip was replaced was compared.
被 覆 ワイヤー重量
市販品(ブランク) 6Kg
窒化ケイ素 22Kg
窒化チタン 19Kg
炭化ケイ素 3.8 K g炭化チタン
30Kg
本発明品は、比較品に比べ優れた効果を示して居る。Covering Wire weight Commercial product (blank) 6Kg Silicon nitride 22Kg Titanium nitride 19Kg Silicon carbide 3.8 Kg Titanium carbide
30Kg The product of the present invention shows superior effects compared to comparative products.
〈実施例■〉
市販の炭酸ガスアーク溶接用電極チップの先端穴に、ア
ルミナで出来た内径、125mm、外径2.25mm、
長さ3IIIff+のパイプを嵌め込んだ電極チップに
イオンプレーティング法によって窒化チタン、炭化チタ
ンの被覆を行い、溶接試験を行った。イオンプレーティ
ングの条件は、イオンビーム法でガス圧(窒素またはア
セチレン)IXIO’torr、バイアス電圧
800Vにて3μmに被覆した。溶接試験条件は自動溶
接にて、25OA、 溶接速度2.5m/分、1.
2mmDS−1’ワイヤーを用い、チノフ交換までのワ
イヤー使用重量で比較した。<Example ■> The tip hole of a commercially available carbon dioxide arc welding electrode tip was made of alumina with an inner diameter of 125 mm and an outer diameter of 2.25 mm.
An electrode tip fitted with a pipe having a length of 3IIIff+ was coated with titanium nitride and titanium carbide by an ion plating method, and a welding test was conducted. The ion plating conditions were ion beam method, gas pressure (nitrogen or acetylene) IXIO'torr, bias voltage 800V, and coating to a thickness of 3 μm. Welding test conditions were automatic welding, 25OA, welding speed 2.5m/min, 1.
A 2mm DS-1' wire was used and the weight of the wire used until Chinov replacement was compared.
被 覆 ワイヤー重量
市販品(ブランク) 6Kg
窒化チタン 30Kg
炭化チタン 50Kg
本発明による。被覆品は、明らかに無処理市販品に比べ
優れて居ることが分かる。Coating Wire weight Commercial product (blank) 6Kg Titanium nitride 30Kg Titanium carbide 50Kg According to the present invention. It can be seen that the coated product is clearly superior to the untreated commercial product.
Claims (1)
ップの耐久性向上法において、 (a)電極チップ先端のワイヤー接触部に、ステアタイ
ト、フォルステライト、ワラストナイト、ムライト、ジ
ルコン、スポンジユメン、コーデイエライト、アルミナ
、ジルコニア、炭化ケイ素、窒化ケイ素、などのセラミ
ックス、及びサーメットにて構成されるパイプを埋め込
む。 (b)さらに電極表面へホウ素、アルミニュム、ケイ素
、チタン、バナジウム、クロム、ジルコニウム、ハフニ
ウム、タンタル、タングステンの単体、合金、及びその
窒化物、または炭化物を1〜10μm被覆。 (c)前記被覆を行うに際し、スパッタリング、イオン
プレーティング、プラズマCVDのいずれかのドライコ
ーティングを用いる事を特徴とする電極の耐久性向上法
。[Claims] In a method for improving the durability of an electrode tip in arc welding, gas welding, and plasma welding, (a) steatite, forsterite, wollastonite, mullite, Embed a pipe made of ceramics such as zircon, sponge membrane, cordierite, alumina, zirconia, silicon carbide, silicon nitride, or cermet. (b) Furthermore, the electrode surface is coated with boron, aluminum, silicon, titanium, vanadium, chromium, zirconium, hafnium, tantalum, tungsten alone, alloys, and their nitrides or carbides in a thickness of 1 to 10 μm. (c) A method for improving the durability of an electrode, which comprises using dry coating such as sputtering, ion plating, or plasma CVD when performing the coating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8612988A JPH01259158A (en) | 1988-04-07 | 1988-04-07 | Method for improving durability of electrode tip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8612988A JPH01259158A (en) | 1988-04-07 | 1988-04-07 | Method for improving durability of electrode tip |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01259158A true JPH01259158A (en) | 1989-10-16 |
Family
ID=13878098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8612988A Pending JPH01259158A (en) | 1988-04-07 | 1988-04-07 | Method for improving durability of electrode tip |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01259158A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995011107A1 (en) * | 1993-10-20 | 1995-04-27 | Orbit Technologies, Inc. | Coating for a resistance welding device |
US5789085A (en) * | 1996-11-04 | 1998-08-04 | Blohowiak; Kay Y. | Paint adhesion |
-
1988
- 1988-04-07 JP JP8612988A patent/JPH01259158A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995011107A1 (en) * | 1993-10-20 | 1995-04-27 | Orbit Technologies, Inc. | Coating for a resistance welding device |
US5789085A (en) * | 1996-11-04 | 1998-08-04 | Blohowiak; Kay Y. | Paint adhesion |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6302318B1 (en) | Method of providing wear-resistant coatings, and related articles | |
US5364663A (en) | Thermally spraying metal/solid lubricant composites using wire feedstock | |
JP5047590B2 (en) | Method for coating metal and system for coating metal | |
JP2601754B2 (en) | Method for improving corrosion and wear resistance of substrates | |
US4788077A (en) | Thermal spray coating having improved addherence, low residual stress and improved resistance to spalling and methods for producing same | |
KR910009163B1 (en) | High volume fraction refractory oxide thermal shock resistant coatings | |
JPH0474423B2 (en) | ||
US20070178247A1 (en) | Method for forming a protective coating with enhanced adhesion between layers | |
US5254359A (en) | Method of forming titanium nitride coatings on carbon/graphite substrates by electric arc thermal spray process using titanium feed wire and nitrogen as the atomizing gas | |
US5352523A (en) | Graphite/carbon articles for elevated temperature service and method of manufacture | |
JPH01259158A (en) | Method for improving durability of electrode tip | |
CN104726815B (en) | The heat-resisting preparation method of composite coating that stainless steel watch surface build-up welding and spraying are combined | |
US5014768A (en) | Chill plate having high heat conductivity and wear resistance | |
JP3029405B2 (en) | Manufacturing method of wear-resistant coated parts | |
JP4146112B2 (en) | Water cooling lance for metallurgy and manufacturing method thereof | |
JP2006111929A (en) | Thermal spraying powder, thermal spraying method and sprayed coating | |
US5618456A (en) | Improvement of surface property of tip and nozzle for gas welder made of copper and copper alloys by chemical conversion coating treatment | |
JP2877058B2 (en) | Film formation method | |
JPS6315343B2 (en) | ||
JPH0337471B2 (en) | ||
JPH0353070A (en) | Surface coated tool member having excellent wear resistance | |
KR20030071413A (en) | properties elevation on the high-sound part of piano frame by thermal sprayed ceramics coating | |
JPH0442066Y2 (en) | ||
US6099915A (en) | Method of coating materials | |
JPS62187572A (en) | Padding method |