JPH0125403Y2 - - Google Patents
Info
- Publication number
- JPH0125403Y2 JPH0125403Y2 JP18387281U JP18387281U JPH0125403Y2 JP H0125403 Y2 JPH0125403 Y2 JP H0125403Y2 JP 18387281 U JP18387281 U JP 18387281U JP 18387281 U JP18387281 U JP 18387281U JP H0125403 Y2 JPH0125403 Y2 JP H0125403Y2
- Authority
- JP
- Japan
- Prior art keywords
- electron
- emitting surface
- electron beam
- electron emitting
- metal column
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
- Electron Beam Exposure (AREA)
Description
【考案の詳細な説明】
本考案はエミツシヨン面各部からの熱電子放出
が一様な電子ビーム源に関する。[Detailed Description of the Invention] The present invention relates to an electron beam source in which thermionic emission from various parts of the emission surface is uniform.
最近、LSI素子や超LSI素子の製作手段として
電子ビーム露光装置が注目を浴びている。特に、
多角形の孔を有する複数枚のスリツト板と、該各
スリツト板間に配置され上方スリツト板の孔を通
過した電子ビームを偏向させる偏向系を備え、所
定の大きさと形状(大方、正方形か長方形)の断
面を有する電子ビームを得ようとする可変面積型
電子ビーム露光装置はスポツト状ビームで描画す
べきパターンを塗り潰す方式の露光装置に比べ、
パターンの大きさや形状に応じた断面のビームで
1回で又は複数回の繋合わせでパターンを描画す
る(面積露光と称す)ので描画スピードや描画精
度の点で著しく勝れていることから有望視されて
いる。さて、この様な可変面積型電子ビーム露光
装置では各方正形ビームの電流密度分布を一様に
する必要から、電子の放出面(エミツシヨン面と
称す)の広い陰極を持つ電子ビーム源が望まれ
る。所が、従来の電子ビーム源では棒状の陰極材
料を加熱し、該材料のエミツシヨン面から熱電子
を放出させる方式がとられているが、エミツシヨ
ン面の場所毎で熱放散量が異なる為、エミツシヨ
ン面の全面に亙り加熱温度を一様にすることが困
難となり、エミツシヨン面各部からの熱電子放出
量を一様にすることが出来なかつた。この様なエ
ミツシヨン面から放出された電子ビームから所定
形状と大きさと有する断面のビームを作つても、
エミツシヨン面の場所毎で放出電子密度が異なる
為、一様な電流密度のビームを得ることは困難と
なる。この様な場合、試料上に直接パターンを描
く為に該ビームを試料上に塗布されたレジスト面
へ照射し現像すると、例えばポジ型レジストを使
用した時、該レジストの持つ感度以下の電流密度
を有するビームが当つた所がそのまま残つたり、
感度以上の電流密度を有するビームが当ると近接
効果(特願昭51−133898号参照)によりパターン
のエツヂ部の近傍にパターン部と一緒に現像され
てしまう部分が生じる。従つて、パターン描画精
度が著しく低下してしまう。 Recently, electron beam exposure equipment has been attracting attention as a means of manufacturing LSI devices and VLSI devices. especially,
It is equipped with a plurality of slit plates having polygonal holes and a deflection system placed between each of the slit plates to deflect the electron beam that has passed through the holes in the upper slit plate. ) variable area electron beam exposure equipment that attempts to obtain an electron beam with a cross section of
It is considered promising because it is significantly superior in terms of drawing speed and accuracy, as the pattern is written in one shot or by connecting multiple beams (referred to as area exposure) with a cross-section that corresponds to the size and shape of the pattern. has been done. Now, in such a variable area electron beam exposure system, it is necessary to make the current density distribution of each square beam uniform, so an electron beam source with a cathode with a wide electron emission surface (referred to as the emission surface) is desired. . However, conventional electron beam sources heat a rod-shaped cathode material and emit thermoelectrons from the emission surface of the material. It became difficult to make the heating temperature uniform over the entire surface, and it was not possible to make the amount of thermionic electrons emitted from each part of the emission surface uniform. Even if a beam with a predetermined shape and size and cross section is created from the electron beam emitted from such an emission surface,
Since the emitted electron density differs depending on the location on the emission surface, it is difficult to obtain a beam with a uniform current density. In such cases, in order to draw a pattern directly on the sample, if the beam is irradiated onto the resist surface coated on the sample and developed, for example, when using a positive resist, the current density may be lower than the sensitivity of the resist. The area where the beam hit will remain as it is,
When a beam having a current density higher than the sensitivity is applied, a portion near the edge of the pattern is developed together with the pattern due to the proximity effect (see Japanese Patent Application No. 51-133898). Therefore, pattern drawing accuracy is significantly reduced.
本考案は斯くの如き点に鑑みてなされたもの
で、平面状の電子放出面を有し、中心に行くに従
つて厚くなる様な電子放出部材を有する熱陰極
と、前記電子放出部材全体に電流を流す手段とを
具備し、前記熱陰極の電子放出面各部からの熱電
子放出量を一様にした新規な電子ビーム源を提供
するものである。 The present invention was made in view of the above points, and includes a hot cathode having a flat electron emitting surface and an electron emitting member that becomes thicker toward the center, and a hot cathode having an electron emitting member that becomes thicker toward the center. The object of the present invention is to provide a novel electron beam source, which is equipped with a means for passing an electric current, and has a uniform amount of thermionic electrons emitted from each part of the electron emitting surface of the hot cathode.
第1図は本考案の一実施例を示した電子ビーム
源の熱陰極部を示したものである。該熱陰極部は
中空円筒部1と電子放出部材2と該部材の中心部
において該部材から直立する中心金属柱3を有
し、これら中空円筒部1、電子放出部材2及び中
心金属柱3はいずれもタンタルの如き金属から成
つている。中心金属柱3の部分と中空円筒部1に
おいては基本的に発熱する必要が無いため、この
実施例のように前記3個の部分を同一の材料で形
成する場合には、中心金属柱3と中空円筒部1の
抵抗が小さくなるよう、これらの部分の断面積を
充分大きくとることが望ましい。又、中心金属柱
3の部分の抵抗が過大になり、それにより電子放
出面の中心のみ加熱される事態を回避するため、
中心金属柱3の断面積と中空円筒部1の断面積は
同一にされている。該陰極部の外には図示しない
が、前記中心金属柱3と外周壁との間に加熱電流
Iを流し該部材を加熱する為の加熱電源、前記電
子放出部材2の下方に配置された陽極(図示せ
ず)と該部材間に該部材の電子放出面Eから放出
された熱電子を加速する為の加速電源が設けられ
ている。さて、前記電子放出部材2の形状は次の
様に設定される。 FIG. 1 shows a hot cathode section of an electron beam source showing an embodiment of the present invention. The hot cathode part has a hollow cylindrical part 1, an electron emitting member 2, and a central metal column 3 standing upright from the member at the center of the member. Both are made of metals such as tantalum. Basically, there is no need to generate heat in the central metal column 3 and the hollow cylindrical portion 1, so when the three portions are made of the same material as in this embodiment, the central metal column 3 and the hollow cylindrical portion 1 are It is desirable that the cross-sectional area of these parts be sufficiently large so that the resistance of the hollow cylindrical part 1 is small. In addition, in order to avoid a situation where the resistance of the central metal column 3 becomes excessive and only the center of the electron emitting surface is heated,
The cross-sectional area of the central metal column 3 and the cross-sectional area of the hollow cylindrical portion 1 are made the same. Although not shown outside the cathode part, there is a heating power source for passing a heating current I between the central metal column 3 and the outer peripheral wall to heat the member, and an anode disposed below the electron emitting member 2. (not shown) and an acceleration power source for accelerating thermoelectrons emitted from the electron emitting surface E of the member is provided between the member and the member. Now, the shape of the electron emitting member 2 is set as follows.
第2図aは電子放出部材2を下から見た図、即
ち電子放出面Eを示す図、第2図bは該部材を横
から見た図、第2図cは第2図bの一部拡大図で
ある。例えば電子放出面の中心からr〜r+dr間
の単位面積当りの発熱量Cは、加熱電流をI、電
流密度をJ、底面部の抵抗率をρ、底面部の厚さ
をhとすれば、単位体積当りの発熱量はρJ2=ρ
(I/2πrh)2であることから
C=2πrhdrρ(I/2πrh)2/2πrdr=ρI2/4π2r2h
となる。この式ρI2/4π2r2hにおいて、ρI2及び4π2
は
一定値である。従つて、電子放出面Eのどの部分
の発熱量も一定にする為にはr2hの値が一定にな
る様に前記部材2の形状を設定すれば良い。この
様にして設定された前記部材の形状は、電子放出
面Eが平面に、該電子放出面と反対側の面がh∝
1/r2の式に沿つた中心軸に対称な曲面状に形成さ
れる。 FIG. 2a is a view of the electron-emitting member 2 viewed from below, that is, a view showing the electron-emitting surface E, FIG. 2b is a view of the member viewed from the side, and FIG. 2c is a view of FIG. 2b. It is an enlarged view of the part. For example, the amount of heat C per unit area between r and r+dr from the center of the electron emission surface is given by the heating current I, the current density J, the resistivity of the bottom part ρ, and the thickness of the bottom part h: The calorific value per unit volume is ρJ 2 = ρ
(I/2πrh) 2 , so C=2πrhdrρ(I/2πrh) 2 /2πrdr=ρI 2 /4π 2 r 2 h. In this formula ρI 2 /4π 2 r 2 h, ρI 2 and 4π 2
is a constant value. Therefore, in order to make the amount of heat generated at any part of the electron emission surface E constant, the shape of the member 2 should be set so that the value of r 2 h is constant. The shape of the member set in this way is such that the electron emitting surface E is flat and the surface opposite to the electron emitting surface is h∝
It is formed into a curved surface symmetrical about the central axis in accordance with the formula 1/r 2 .
この様に電子放出部材を形成し、中心金属柱2
と外周壁との間に加熱電流を流せば、該部材の電
子放出面Eの各部からの発熱量、即ち熱放散量が
一様となる為、電子放出面の全面に亙り加熱温度
を一様にすることが出来、電子放出面各部から同
一の量の熱電子を放出することが出来る。尚加熱
電流を流す方向は、金属柱3から中空円筒部1の
方向あるいは中空円筒部1から金属柱3の方向の
いずれでも良い。 In this way, the electron emitting member is formed, and the central metal column 2
When a heating current is passed between the E and the outer peripheral wall, the amount of heat generated from each part of the electron emitting surface E of the member, that is, the amount of heat dissipated, becomes uniform, so the heating temperature is uniform over the entire surface of the electron emitting surface. The same amount of thermoelectrons can be emitted from each part of the electron emitting surface. Note that the direction in which the heating current is passed may be either from the metal column 3 to the hollow cylindrical portion 1 or from the hollow cylindrical portion 1 to the metal column 3.
又、前記熱陰極部の側部となる中空円筒形状部
の端部をスダレ状に分割しても良い。更に、中心
金属柱の代りにリード線を設けても良い。 Further, the end portion of the hollow cylindrical portion forming the side portion of the hot cathode portion may be divided into a sagging shape. Furthermore, a lead wire may be provided instead of the central metal pillar.
本考案によれば、電子放出面の各部からの熱電
子放出量が一様な陰極部を有する電子ビーム源を
実現することが出来るので、電子ビーム露光にお
けるパターン描画精度が向上する。又、本考案の
電子ビーム源は著しく簡単な構成である。 According to the present invention, it is possible to realize an electron beam source having a cathode portion in which the amount of thermionic electrons emitted from each part of the electron emission surface is uniform, thereby improving pattern drawing accuracy in electron beam exposure. Furthermore, the electron beam source of the present invention has an extremely simple construction.
第1図は本考案の一実施例を示した電子ビーム
源の熱陰極部、第2図aは前記熱陰極部の電子放
出面を下から見た図、第2図bは同じ電子放出面
を横から見た図、第2図cは第2図bの一部拡大
図である。
1:中空円筒部、2:電子放出部材、3:中心
金属柱、E:エミツシヨン部。
FIG. 1 is a hot cathode section of an electron beam source showing an embodiment of the present invention, FIG. 2 a is a bottom view of the electron emitting surface of the hot cathode section, and FIG. 2 b is the same electron emitting surface. FIG. 2c is a partially enlarged view of FIG. 2b. 1: Hollow cylinder part, 2: Electron emission member, 3: Central metal column, E: Emission part.
Claims (1)
この円筒の中心軸に沿つて前記底部から直立する
中心金属柱からなる熱陰極、及び前記電子放出部
材全体に電流を流す手段とを具備した電子ビーム
源において、前記電子放出面の温度が一定となる
ように電子放出部材の厚さが中心からの距離に応
じて変化したことを特徴とする電子ビーム源。 An electron-emitting device comprising: a hot cathode consisting of a hollow cylinder having a flat electron-emitting surface at the bottom; a central metal column standing upright from the bottom along the central axis of the cylinder; and means for passing a current through the entire electron-emitting member. An electron beam source characterized in that the thickness of the electron emitting member changes depending on the distance from the center so that the temperature of the electron emitting surface is constant.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18387281U JPS5887252U (en) | 1981-12-10 | 1981-12-10 | electron beam source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18387281U JPS5887252U (en) | 1981-12-10 | 1981-12-10 | electron beam source |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5887252U JPS5887252U (en) | 1983-06-13 |
JPH0125403Y2 true JPH0125403Y2 (en) | 1989-07-31 |
Family
ID=29983520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18387281U Granted JPS5887252U (en) | 1981-12-10 | 1981-12-10 | electron beam source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5887252U (en) |
-
1981
- 1981-12-10 JP JP18387281U patent/JPS5887252U/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5887252U (en) | 1983-06-13 |
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