JPH01251536A - Manufacture of shadow mask - Google Patents

Manufacture of shadow mask

Info

Publication number
JPH01251536A
JPH01251536A JP7932588A JP7932588A JPH01251536A JP H01251536 A JPH01251536 A JP H01251536A JP 7932588 A JP7932588 A JP 7932588A JP 7932588 A JP7932588 A JP 7932588A JP H01251536 A JPH01251536 A JP H01251536A
Authority
JP
Japan
Prior art keywords
water
shadow mask
film
photo
organic solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7932588A
Other languages
Japanese (ja)
Inventor
Yutaka Tanaka
裕 田中
Makoto Kudo
誠 工藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP7932588A priority Critical patent/JPH01251536A/en
Publication of JPH01251536A publication Critical patent/JPH01251536A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a high precision shadow mask with middle to high fine grains by, after exposing a photo-sensitive membrane to light having a prescribed pattern and developing it, washing it with an organic solvent with a polar radical and having a vapor pressure higher than that of water. CONSTITUTION:A photosensitive solution with a water soluble polymer as a membrane-forming agent is applied onto the surface of a shadow mask material and dried to form a photo-sensitive membrane. Then, this photo-sensitive membrane, after being exposed to light having a prescribed pattern and developed, is washed with an organic solvent with an polar radical and having a vapor pressure higher than that of water. As the organic solvent with a polar radical is so soluble in water that it is readily replaced with the developing solution, and also provided with a vapor pressure higher than that of water so that it rapidly evaporates, thereby suppressing development of blurring of the photo-sensitive membrane to minimum. With this procedure it is possible to produce a high precision shadow mask with middle to high fine grains.

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、カラーブラウン管に使用するシャドウマスク
の製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a method for manufacturing a shadow mask used in a color cathode ray tube.

(従来の技術) カラーブラウン管に使用するシャドウマスクは、一般に
、写真製版法を用いて製造されている。
(Prior Art) Shadow masks used in color cathode ray tubes are generally manufactured using photolithography.

そして、特に、中精細度、高精細度のシャドウマスクの
製造は、脱脂−水洗一感光液塗布一乾燥一露光一現像一
硬膜一水洗一水切り−バーニングー肌出し一第一腐蝕一
水洗一乾燥一ニス塗布−乾燥−第二腐蝕−水洗一剥膜一
水洗一乾燥等の多くの工程を経て行なわれている。
In particular, the production of medium-definition and high-definition shadow masks involves degreasing, washing with water, application of photosensitive liquid, drying, exposure, development, hardening, washing with water, draining, burning, skin exposure, first corrosion, washing with water, and drying. This process is carried out through many steps such as first varnish application, drying, second corrosion, washing with water, peeling, washing with water, and drying.

以下、上記、中精細度、高精細度シャドウマスクの製造
方法の一例を説明する。
An example of a method for manufacturing the medium-definition and high-definition shadow masks described above will be described below.

まず、純鉄軟鋼板やアンバー材等からなるシャドウマス
ク素材の両主面を脱脂、洗浄により清浄にして乾燥させ
た後、両主面にカゼインと重クロム酸アンモニウムを主
成分とする感光液を塗布し、90℃で約2.5分間乾燥
させて約6μmの感光膜を形成する。次に、この両感光
膜に、所定のネガ原版を密着させ、5にνの水銀ランプ
で、約1mの位置から30秒間程度露光させる。
First, both main surfaces of the shadow mask material made of pure mild steel plate, amber material, etc. are cleaned by degreasing, washing and drying, and then a photosensitive liquid containing casein and ammonium dichromate as main components is applied to both main surfaces. It is coated and dried at 90° C. for about 2.5 minutes to form a photoresist film with a thickness of about 6 μm. Next, a predetermined negative master plate is brought into close contact with both of the photoresist films, and exposed for about 30 seconds from a position of about 1 m using a mercury lamp of 5.5V.

この露光工程において、感光膜の露光部では、重クロム
酸塩の光化学反応によって6価クロム化合物が3価クロ
ム化合物に還元され、この3価クロム化合物が成膜剤で
あるカゼインと結合することによって架橋硬化し、水に
不溶性になる。
In this exposure process, in the exposed area of the photosensitive film, hexavalent chromium compounds are reduced to trivalent chromium compounds by a photochemical reaction of dichromate, and this trivalent chromium compound combines with casein, a film-forming agent. Cures by crosslinking and becomes insoluble in water.

次いで、感光膜に、約45℃の温水を約1分間スプレイ
噴霧して未感光部すなわち電子ビーム通過孔部形成位置
の感光膜を溶解除去する。
Next, hot water at about 45° C. is sprayed onto the photoresist film for about 1 minute to dissolve and remove the photoresist film in the unexposed area, that is, the position where the electron beam passage hole is formed.

この後、未露光部のレジストが極力滲み出さないように
約0.5〜5重量%の無水クロム酸で両主面をぬぐい水
洗する、いわゆる硬膜処理を行なう。
Thereafter, a so-called hardening process is performed in which both main surfaces are wiped with about 0.5 to 5% by weight of chromic anhydride and washed with water so that the resist in unexposed areas does not bleed out as much as possible.

この硬膜処理工程では、現像後の未反応カゼインが無水
クロム酸または重クロム酸アンモニウムで強制的に硬化
され、以後の滲み出しが抑制される。
In this hardening process, unreacted casein after development is forcibly hardened with chromic anhydride or ammonium dichromate, thereby suppressing subsequent oozing.

次に界面活性剤(たとえばドライウェル[商品名]等)
の0.2%溶液で水切りを迅速に行い、約150℃で均
一にバーニングを行う。
Next, a surfactant (for example, Drywell [product name], etc.)
Drain quickly with a 0.2% solution of and burn uniformly at about 150°C.

しかる後、現像後に、未露光部にわずかに残存するレジ
ストを除去して素材上に原版ネガパターンと同一の寸法
をできるだけ正確に再現させるために、肌出し処理を行
う。
Thereafter, after development, a roughening process is performed to remove the slight amount of resist remaining in the unexposed areas and to reproduce the same dimensions as the original negative pattern on the material as accurately as possible.

この肌出し処理は、例えば、蓚酸と過酸化水素水と濃硫
酸の混液からなる肌出し液で処理したり、過マンガン酸
カリウムと苛性ソーダ溶液の混液からなる肌出し液で処
理した後、蓚酸溶液で処理することにより行なわれる。
This skin-exfoliating treatment can be performed, for example, by treating with a skin-exfoliating solution consisting of a mixture of oxalic acid, hydrogen peroxide, and concentrated sulfuric acid, or after treating with a skin-exfoliating solution consisting of a mixture of potassium permanganate and caustic soda solution. This is done by processing.

これらの肌出し液の各成分は、緩衡剤、素材の清浄剤、
溶出したカゼインの分解剤として作用する。
The ingredients in these skin care solutions include a buffering agent, a cleaning agent for the material,
Acts as a decomposition agent for eluted casein.

肌出し処理の後、両主面を水洗して第一の腐蝕処理を行
う。
After the bare surface treatment, both main surfaces are washed with water and subjected to a first corrosion treatment.

この後、電子銃側孔径のレジストを一旦剥離し、乾燥後
ニスコーティングを行って再び乾燥する。
Thereafter, the resist on the electron gun side hole diameter is once removed, and after drying, varnish coating is applied and drying is performed again.

次に第二の腐蝕を蛍光面孔径側より行ない、最終の剥膜
、水洗、乾燥工程を経て、多数の電子ビーム通過孔部の
穿設された中精細度、高精細度のシャドウマスクが得ら
れる。
Next, a second corrosion process is performed from the pore diameter side of the phosphor screen, and after a final peeling, washing, and drying process, a medium-definition or high-definition shadow mask with a large number of electron beam passage holes is obtained. It will be done.

ところで、近時、各種モニター、デイスプレィ管の開発
に伴いシャドウマスクの電子ビーム通過孔部は極めて微
細となり、かつその断面形状の品質も、厳密な寸法精度
等が要求されるようになってきている。
Incidentally, in recent years, with the development of various monitors and display tubes, the electron beam passage hole in the shadow mask has become extremely fine, and the quality of its cross-sectional shape is also required to have strict dimensional accuracy. .

上記製造工程で製造されるシャドウマスクの寸法精度を
厳密にコントロールするには、原版ネガパターン寸法を
、できるだけシャドウマスク原板に忠実に再現する必要
がある。特に前述した製造工程の中の、現像工程直後の
現像硬膜処理は、レジストの滲み出し防止のために行な
うものであり、また、バーニング工程後の肌出し工程も
、素材上に残存するレジストを除去する目的で行うもの
であるから、いずれも寸法精度を厳密にコントロールす
るうえで、すなわち素材上に原版パターン寸法を忠実に
再現するうえで重要な工程であって、従来、これらの工
程の両方または一方゛を製造工程中に組込むことは中精
細度ならびに高精細度のシャドウマスクを製造する場合
に、必須のものとされていた。
In order to strictly control the dimensional accuracy of the shadow mask manufactured in the above manufacturing process, it is necessary to reproduce the original negative pattern dimensions as faithfully as possible to the shadow mask original plate. In particular, in the manufacturing process mentioned above, the development hardening process immediately after the developing process is performed to prevent the resist from bleeding out, and the exposing process after the burning process also removes the resist remaining on the material. Because they are performed for the purpose of removal, they are both important processes for strictly controlling dimensional accuracy, that is, for faithfully reproducing the original pattern dimensions on the material. Incorporating one or the other into the manufacturing process has been considered essential when manufacturing medium-definition and high-definition shadow masks.

(発明が解決しようとする課題) しかしながら、このような従来の硬膜処理工程および肌
出し工程を含むシャドウマスクの製造方法には、次のよ
うな問題があった。
(Problems to be Solved by the Invention) However, the conventional shadow mask manufacturing method including the hardening process and the skin exposure process has the following problems.

■ 硬膜処理工程において未露光部のレジストが極力滲
み出さないように、約0.5〜5%の無水クロム酸でぬ
ぐう際に、塗布跡(−様に浸透して行かない現象)が発
生し易く、腐蝕工程でこれがムラとなって現れる。
■ During the hardening process, when wiping with approximately 0.5 to 5% chromic acid anhydride to prevent unexposed areas of the resist from seeping out, traces of the coating (a phenomenon in which the resist does not penetrate) occur. This tends to cause unevenness and appears as unevenness during the corrosion process.

■ 感光膜が、この工程に現像水を持込んでしまうため
、無水クロム酸の濃度コントロールが非常に困難である
■ It is very difficult to control the concentration of chromic anhydride because the photosensitive film brings development water into this process.

■ 処理液を使い捨てる場合には、公害処理、廃水処理
の問題が生ずる。
■ If the treatment liquid is disposable, problems will arise in terms of pollution treatment and wastewater treatment.

■ 肌出し工程においては、残存するレジストを完全に
除去しようとすると、露光されたレジスト膜も同時に一
様に侵されてしまうため、膜減り現象を起し、感光膜が
化学的、機械的に弱くなり、変形孔、傷等も発生し易く
歩留りが非常に低いものとなる。
■ In the exposure process, if you try to completely remove the remaining resist, the exposed resist film will also be uniformly attacked, resulting in film thinning phenomenon and damage to the photoresist film due to chemical and mechanical damage. It becomes weak, and deformed holes, scratches, etc. are likely to occur, resulting in a very low yield.

すなわち、従来の硬膜処理および肌出し処理を行なうシ
ャドウマスクの製造方法では、素材上に原版パターン寸
法を精度よく再現する反面、硬膜処理、肌出し処理にお
いて上記したような特有の困難さや欠点が生じるという
問題があった。
In other words, while the conventional shadow mask manufacturing method that performs hardening and skinning processes accurately reproduces the dimensions of the original pattern on the material, it suffers from the above-mentioned difficulties and drawbacks in hardening and skinning processes. There was a problem that this occurred.

本発明は、このような従来のシャドウマスクの製造方法
における硬膜処理、肌出し処理に対陣する問題を解消す
べくなされたもので、上記硬膜処理工程および肌出し処
理工程が不要で、精度の高い中、高精細シャドウマスク
の製造を可能にしたシャドウマスクの製造方法を提供す
ることを目的とする。
The present invention has been made to solve the problems of the hardening process and the skin exposure process in the conventional shadow mask manufacturing method, and eliminates the need for the hardening process and skin exposure process. It is an object of the present invention to provide a method for manufacturing a shadow mask that enables manufacturing of a high-definition shadow mask with high accuracy.

[発明の構成] (課題を解決するための手段) 本発明のシャドウマスクの製造方法は、シャドウマスク
素材の表面に水溶性高分子を成膜剤とする感光液を塗布
し、乾燥させて感光膜を形成し、次いでこの感光膜に所
定のパターンを露光し、現像させた後、水より蒸気圧の
高い極性基を有する有機溶剤を用いて洗浄することを特
徴としている。
[Structure of the Invention] (Means for Solving the Problems) The method for manufacturing a shadow mask of the present invention is to apply a photosensitive solution containing a water-soluble polymer as a film-forming agent to the surface of a shadow mask material, dry it, and expose it to light. The method is characterized in that a film is formed, then a predetermined pattern is exposed on this photosensitive film, developed, and then washed using an organic solvent having a polar group having a higher vapor pressure than water.

本発明に使用する上記有機溶剤としては、メタノール、
エタノール、プロパツールのようなアルコール類、メチ
ルエチルケトンのようなケトン類、メチルエチルエーテ
ルのようなエーテル類が例示される。これらは1種また
は2種以上で使用されるが、必要に応じて50重量部%
以下の水を添加して引火点を高くして使用するようにし
てもよい。
The organic solvent used in the present invention includes methanol,
Examples include alcohols such as ethanol and propatool, ketones such as methyl ethyl ketone, and ethers such as methyl ethyl ether. These may be used alone or in combination of two or more, but if necessary, 50 parts by weight
The following water may be added to raise the flash point for use.

なお、火災の危険を避けるために、この工程を窒素のよ
うな不活性気体中で行なうようにしてもよい。
It should be noted that this step may be carried out under an inert gas such as nitrogen to avoid the risk of fire.

これらの有機溶剤の内、危険性、毒性が小さく、比較的
安価な点でエチルアルコールが最も本発明に適している
Among these organic solvents, ethyl alcohol is most suitable for the present invention because it is less dangerous, less toxic, and relatively inexpensive.

なお、本発明においては、現像工程において素材を垂直
に走行させることにより現像水を迅速に流し去るように
し、さらに未露光部分を現像する時間を従来の約2倍程
度にするが、または現像能力を従来の2倍程度にするこ
とが望ましい。
In addition, in the present invention, by running the material vertically in the developing process, the developing water is quickly washed away, and the time to develop the unexposed areas is approximately twice that of the conventional method. It is desirable to make it about twice the conventional value.

(作用) 本発明の製造方法においては、極性基ををする有機溶剤
は水に溶解するので現像液と速やかに置換し、かつ蒸気
圧が水より高いので、迅速に揮散して感光膜の滲みだし
が最小限に押えられる。
(Function) In the manufacturing method of the present invention, since the organic solvent having a polar group is dissolved in water, it is quickly replaced by the developer, and since its vapor pressure is higher than that of water, it is quickly volatilized and prevents bleeding of the photosensitive film. Dashi is kept to a minimum.

したがって、従来の問題は全て解消、もしくは改善され
、硬膜処理、肌出し処理したものと何等変らない寸法精
度の良好な中、高精細シャドウマスクを製造することが
できる。
Therefore, all of the conventional problems are solved or improved, and it is possible to manufacture a high-definition shadow mask with good dimensional accuracy that is no different from those that have been subjected to hardening treatment or surface exposure treatment.

(実施例) 以下、本発明を、13’円形孔タイプシャドウマスク(
ピッチ0.2711%電子銃側孔径0.130sv 、
蛍光面側孔径0.25+1m)の製作に適用した実施例
について詳細に説明する。
(Example) Hereinafter, the present invention will be described as a 13' circular hole type shadow mask (
Pitch 0.2711% Electron gun side hole diameter 0.130sv,
An example applied to manufacturing a phosphor screen side hole diameter (0.25+1 m) will be described in detail.

純鉄アルミキルド鋼からなる素材を脱脂、洗浄、乾燥し
た後、カゼインを主成分とする感光溶液(感光剤:重ク
ロム酸アンモニウム)を塗布し、90℃で約2.5分間
乾燥させて約6μ瓢の膜厚の感光膜を形成させた。次に
、この感光膜上にネガ原版(蛍光面側0.15mm、電
子銃側0.04av、原版製作機: Gerber社製
Photo Plotter )を密着させ、約1mの
距離から 5kWの水銀ランプで約40秒間露光させた
After degreasing, washing, and drying a material made of pure iron-aluminum killed steel, a photosensitive solution containing casein as a main component (photosensitizer: ammonium dichromate) is applied, and the material is dried at 90°C for about 2.5 minutes to form a film of about 6 μm. A photoresist film with the thickness of a gourd was formed. Next, a negative original plate (0.15 mm on the phosphor screen side, 0.04 av on the electron gun side, original plate making machine: Photo Plotter manufactured by Gerber) was brought into close contact with the photoresist film, and it was exposed to light using a 5 kW mercury lamp from a distance of about 1 m. Exposure was made for 40 seconds.

次に、約45℃の温純水によりスプレィ圧約1kg/C
シで約1分間スプレィ噴霧して未感光部すなわち電子ビ
ーム通過孔部形成位置の感光膜を溶解除去した。なお、
このとき素材は垂直式走行とし、スプレィノズルを取付
けたマニフォルドは約±20″の角度でスイングするよ
うにしてスプレィ噴霧を行なった。しかる後、室温のエ
チルアルコールに浸漬し直ちに引上げて水切りを行った
。この後、150℃の雰囲気中で約30秒間乾燥させ、
続いて、200℃の雰囲気中で約30秒間バーニング処
理を行なった。
Next, spray with warm pure water of about 45℃ at a pressure of about 1kg/C.
The photoresist film was sprayed for about 1 minute with a gun to dissolve and remove the unexposed areas, that is, the positions where electron beam passage holes were formed. In addition,
At this time, the material was moved vertically, and the manifold with the spray nozzle attached was swung at an angle of approximately ±20" to perform spraying. After that, it was immersed in ethyl alcohol at room temperature and immediately pulled up and drained. After that, it was dried for about 30 seconds in an atmosphere of 150°C.
Subsequently, a burning process was performed for about 30 seconds in an atmosphere of 200°C.

バーニング処理後、素材表面を観察したところ、滲み出
したカゼインは、はとんど認められず、あったとしても
寸法精度に影響を及ぼさない程度の量であることが確認
できた。
When the surface of the material was observed after the burning process, it was confirmed that there was hardly any oozing casein, and even if there was, it was in an amount that did not affect the dimensional accuracy.

次に、蛍光面側孔をポリスチレンフィルムで腐蝕されな
いように遮蔽して、電子銃側孔を約4分間腐蝕させた(
PeCfl z溶液:85℃、比重1.4BD、液圧1
kg/ci:スタイネンノズル使用)。
Next, the hole on the side of the phosphor screen was covered with a polystyrene film to prevent corrosion, and the hole on the side of the electron gun was allowed to corrode for about 4 minutes (
PeCfl z solution: 85°C, specific gravity 1.4BD, liquid pressure 1
kg/ci: using Steinen nozzle).

続いて、さらに電子銃側孔のレジスト膜をアルカリ溶液
(Na01160℃、濃度約6x1スプレイ圧1kg/
c))で完全剥離し、水洗して乾燥させた。乾燥後、蛍
光面側孔を遮蔽していたフィルムを取除き、電子銃側孔
にのみニスコータマシンでニス(カゼイン11エポキシ
樹脂1、水1の比率の混合物)を塗布し、約140℃の
雰囲気中で約4分間乾燥させて約lOμ膳厚に成膜させ
た。
Subsequently, the resist film on the side hole of the electron gun was further coated with an alkaline solution (Na01160℃, concentration approximately 6x1, spray pressure 1kg/
c)) It was completely peeled off, washed with water, and dried. After drying, remove the film that was shielding the holes on the side of the phosphor screen, apply varnish (a mixture of 1 part casein, 1 part epoxy resin, and 1 part water) only to the electron gun side hole using a varnish coater machine, and heat it at about 140°C. It was dried in an atmosphere for about 4 minutes to form a film with a thickness of about 10 μm.

しかる後、蛍光面側孔から約12分間腐蝕させた(Fe
Cl23溶液62℃、比重1.485 、液圧1kg/
cd :スタイネンノズル使用)。そして水洗、レジス
ト剥離(NaOH90℃、濃度8%、スプレィ圧力1k
g/c7、処理時間約2分間)を行い、水洗後乾燥して
、13’円形孔タイプシャドウマスク(ピッチ0.27
n+m。
After that, the side holes of the phosphor screen were etched for about 12 minutes (Fe
Cl23 solution 62℃, specific gravity 1.485, liquid pressure 1kg/
cd: using Steinen nozzle). Then, wash with water and remove the resist (NaOH 90℃, concentration 8%, spray pressure 1k)
g/c7, processing time approximately 2 minutes), washed with water, dried, and made into a 13' circular hole type shadow mask (pitch 0.27
n+m.

電子銃側孔径0.130■、蛍光面側孔径0.25m5
+)を得た。
Electron gun side hole diameter 0.130■, phosphor screen side hole diameter 0.25m5
+) was obtained.

この実施例で得られた高精細マスクの寸法精度は、近傍
値で±2μm 、13’の面積内で±3μ慣に十分に入
ることが確認され、カラー受像管の機能を十分に満足す
ることが確認された。
It has been confirmed that the dimensional accuracy of the high-definition mask obtained in this example is within ±2 μm in the neighborhood and ±3 μm within the area of 13', and fully satisfies the function of a color picture tube. was confirmed.

なお、以上の実施例では、シャドウマスクとして純鉄ア
ルミギルド鋼からなる素材を用いた例について説明した
が、本発明は、かかる実施例に限定されるものではなく
、一般民生用シャドウマスクは勿論、FSタイプ中高精
細管の主流となるアンバーマスクについても十分に適用
可能である。
In the above embodiments, an example was explained in which a material made of pure iron/aluminum guild steel was used as a shadow mask, but the present invention is not limited to such embodiments, and can of course be used as a shadow mask for general consumer use. It is also fully applicable to amber masks, which are the mainstream for FS type medium and high definition tubules.

[発明の効果] 以上説明したように、本発明のシャドウマスクの製造方
法によれば、硬膜処理工程および肌出し処理工程が不要
となるので、生産性が向上する他、次のような多くの効
果を得ることができる。
[Effects of the Invention] As explained above, according to the method for producing a shadow mask of the present invention, the hardening process and the skin exposure process are not required, so productivity is improved and the following many advantages are achieved. effect can be obtained.

■ 硬膜処理工程において無水クロム酸でぬぐうために
生ずる塗布跡が発生せず、したがって腐蝕工程でこれに
よるムラの発生がない。
■ There are no coating marks caused by wiping with chromic anhydride during the hardening process, and therefore no unevenness occurs during the corrosion process.

■ 硬膜処理工程における無水クロム酸の調整や処理液
を廃棄する場合の問題がなくなる。
■ Eliminates the problems of adjusting chromic acid anhydride and disposing of the processing solution during the hardening process.

■ 肌出し工程における膜減り現象がなくなり、変形孔
、傷等の発生が減少して歩留りが向上する。
■ The film thinning phenomenon during the exposing process is eliminated, the occurrence of deformed holes, scratches, etc. is reduced, and the yield is improved.

Claims (1)

【特許請求の範囲】[Claims] (1)シャドウマスク素材の表面に水溶性高分子を成膜
剤とする感光液を塗布し、乾燥させて感光膜を形成し、
次いでこの感光膜に所定のパターンを露光し、現像させ
た後、水より蒸気圧の高い極性基を有する有機溶剤を用
いて洗浄することを特徴とするシャドウマスクの製造方
法。
(1) Applying a photosensitive solution containing a water-soluble polymer as a film forming agent to the surface of the shadow mask material and drying it to form a photosensitive film;
A method for manufacturing a shadow mask, which comprises exposing the photoresist film to a predetermined pattern, developing the film, and cleaning the film using an organic solvent having a polar group having a vapor pressure higher than that of water.
JP7932588A 1988-03-31 1988-03-31 Manufacture of shadow mask Pending JPH01251536A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7932588A JPH01251536A (en) 1988-03-31 1988-03-31 Manufacture of shadow mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7932588A JPH01251536A (en) 1988-03-31 1988-03-31 Manufacture of shadow mask

Publications (1)

Publication Number Publication Date
JPH01251536A true JPH01251536A (en) 1989-10-06

Family

ID=13686730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7932588A Pending JPH01251536A (en) 1988-03-31 1988-03-31 Manufacture of shadow mask

Country Status (1)

Country Link
JP (1) JPH01251536A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0512996A (en) * 1991-07-02 1993-01-22 Dainippon Printing Co Ltd Manufacture of shadow mask
JP2001064785A (en) * 1999-08-25 2001-03-13 The Inctec Inc Draining agent
US20160348266A1 (en) * 2014-11-21 2016-12-01 Shenzhen China Star Optoelectronics Technology Co. Shadow mask cleaning method and cleaning device thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0512996A (en) * 1991-07-02 1993-01-22 Dainippon Printing Co Ltd Manufacture of shadow mask
JP2001064785A (en) * 1999-08-25 2001-03-13 The Inctec Inc Draining agent
US20160348266A1 (en) * 2014-11-21 2016-12-01 Shenzhen China Star Optoelectronics Technology Co. Shadow mask cleaning method and cleaning device thereof

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