JPH01249692A - Molecular beam epitaxy device - Google Patents

Abstract

PURPOSE:To provide the above device with which the simplification of the device and the prolonged life of materials are simultaneously attained by disposing a group V evaporation source nearer a substrate holder than the other evaporation sources among plural pieces of the evaporation sources disposed in such a manner that the axial lines face the substrate holder and abolishing the shutter of the group V evaporation source. CONSTITUTION:Plural pieces of the evaporation sources 5a, 5b, 5c... are disposed to the bottom of a growth chamber 2 in such a manner that the axial lines (a), (b), (c)... thereof face the center of the substrate holder 3. Particularly the evaporation source 5a contg. the group V element such as As is disposed diametrically opposite to the holder 3. In addition, the evaporation source 5a is disposed nearer the holder 3 than the other evaporation sources and a shutter is abolished. On the other hand, the apertures of the other evaporation sources 5b, 5c... are so constituted as to be opened and closed by shutters 7. Since the above-mentioned group V evaporation source 5a is disposed nearer the holder 3 than the other evaporation sources, the wasteful scattering of molecular beams into the growth chamber 2 is prevented.

Description

[Detailed description of the invention]

[Industrial use! l! i'] This invention relates to a molecular cotton epic 1-silicon device, and more particularly to one that achieves the simplification of the device and the efficient use of the group-grown H-silicon. [Prior Art] In the manufacturing process of m--v group compound semiconductors, the molecular beam evictor 1-c method is used as a method for epitaxially growing l1l-V group elements on a C single-crystal substrate.
This is a type of vacuum evaporation method,
Gariuno, G+i, Almuuno, Δ1, Injiuno,
o) n+ group elements such as In, and arsenic As, sip
Group V elements, such as
a As , At G, ]8s, lnr' or In
G: i l' Tl1-V group compound led tree 4i
! 1. ．． Sa-Uru force l left C
be. Like this 41′ molecule #+l! Since the Epicu 1-C method includes 1, 0) 7□ in an ultra-high vacuum container,
7. Contamination of impurities from residual residue is very low. (<-
Group (1) The surface can be kept clean, ■ A large surface Ji'i can be uniformly and atomically... Chawaka speed 11
Since it is possible to always slow down the height and control it to a positive 4'n], the thickness j1 can be controlled to several people ii'lj;i ``i'
- Multi-component mixed crystal films that can be controlled with high precision on the order of -J and G (can be easily controlled in 1N) Ninari Jj: IN
Table jTij, ah? , or about the growth conditions from the molecular beam: 1.
'1. directly into 4)]5. - You can take advantage of the advantages of being able to control Soyidhanok. The I of the present invention that follows! I! In order to facilitate f44', an outline of the molecular beam epitaxial apparatus for carrying out the molecular 11f epitaxial method as described above is shown in Figure 2.
4 General 111: i J11! This will be explained using a diagram. Super, 1', (Connect it to the empty pump I?; ε, 1,!, (The handling voltage 3 is placed in the center of 2, which is,)
, (Crystal of plate; Ujigami Q 11 hair), 5'L)ノ and J-
4 tameni 1! ,"times'j: -(: 3 Zr A, sea urchin - (there.
Become 1! , (A heater is installed to heat the board to the desired temperature of 1M1 degree.
On one side of the chamber 2, there are several phosphorescence d+,t ) ... is placed.The evaporation source 5 ・is also connected to the hot air detected by the temperature sensor.
(The heater controlled by
11. It's like it's going to be done. In addition, each evaporation source 5 has a liquid nitrogen filtration source 71, so that the evaporation sources 5 are not influenced by each other or dyed with liquid nitrogen. Start of crystal growth and ('r' 1m II, each Jl
The opening and closing of the shack 7 disposed in front of the opening 1-1 of the pump 4, especially 3F', is performed. For example, Ga As Ii'4;
,,In order to grow Ga8 IN], 1
, an evaporation source filled with Ga and an evaporation source filled with As (while heating the source 5 to a predetermined temperature), (
Board boulder 3'/! Set the appropriate temperature to 4 degrees.
, ), -1- each red light/J! ,'t 5's Sha, Ri7
is set to a predetermined II effect; jl lj4 state. When Δ1 is evaporated to -tit, G+ly:AI, -%Δ5I
F7 is growing. When Ga and 81 evaporate j, l
o) By controlling the ratio J:Ill t', the A11l component X can be controlled. :I, T, To make the growth layer r)-shaped, Sl,
Sn, etc. were adjudicated by the same It;, -1. This is the p-form, ]) (・, M I: i, ().

[Problem to be solved by the present invention, 1, .] In this conventional molecule-ray evitor device, the present invention is also shown in FIG. J, sea urchin, or JP-A-62-6
2512υ-Ko (Do, 1, Q, Ekikai 61--53
7 ] No. 6 public + old ζ color 3J, regardless of group Ill elements and group V elements, evaporation source 5, which grows all elements with 4,1 stones, is no. A shutter 7 for shielding and opening the molecular beam from the evaporation source 5 to the evaporation source 5 is provided at 6. 41M like this
Conveniently, ], A) and rotating gloss, 4N] are the most consumed in the evening and evening.
, ; There is a limit to the size of the stem growth for group ■ elements such as A and H, and the life is shortened by +411 noj, and the number of times is 11.
As a result, the device has 11 turns or a short turn.
There is a problem. It is known that the foil coefficient of a group element that is 1 to a group II element is determined by the presence of a group Ill element on the substrate 1. For example, , [;J1ΔS
To board-1 0) As i J'``s'i 4i number ε''
, Ga, or 81 is present, it is 1, and if not, it is O. In the conventional device, the tea source for Group II elements is placed at a predetermined distance from the substrate holder, similar to the evaporation source for Group II elements.
It is thought that this was done in consideration of the uniformity of the a and j groups of the group elements, but this is not the case for the group group elements G, j, and the group V elements mentioned above. This is reasonable when considering the −1 adhesion coefficient. The 41.iYl of the group ■ element to the substrate is determined by the (=J adhesion of the llt group element, and the group III element is the group 41M+ (= 19 deviation is because group V elements also follow it (=19). The temperature of the group V element during operation of the device is ε; I:
The temperature is about 300°0, which is 1 M, which is lower than that of other caustic sources.In addition to this temperature control, it is relatively easy to start and stop the light, so it is difficult to use conventional methods. It cannot be said that the sheet, which is installed in the equipment and also as an evaporation source for group (I) elements, is absolutely essential. This invention ε:l, -1- Based on the knowledge mentioned above, the problems of conventional molecular beam epitaxy equipment can be solved in one go, and the equipment can be simplified and the life of materials can be extended at the same time. Every time I accomplish something, I count it as myself on that day.

[Means to solve the problem]

In order to solve the conventional problems, the present invention has the following technical means. However, the invention described in claim 1 of the present application has the following features: 1. A growth chamber connected to an ultra-high vacuum pump, a substrate holder disposed inside this growth JJ6 chamber, and a (axis line) located on one side of the growth JJ6 chamber. In a molecular beam Epic 1-Shi device that can accommodate a plurality of evaporation sources arranged in one direction, the substrate holder is directed to the substrate holder. The evaporation source (hereinafter referred to as ■ group stem origin i1j; i) used as the material for growth) A is compared to 1g of other evaporation ゛(2□(i!L
In addition to placing the V-group phosphorescent source in a two-way device, a shutter for shielding and opening the emission is installed on each block of the V group phosphorescent source. , invention number stated in claim 2 of the present application,'', -1-
In the molecular beam epitaxy device described in i2, the group Δ≦() is placed in the growth chamber at a position facing the LJ2+ substrate holder at a position: ?, 'j'. At the same time, the other evaporation sources are arranged in an annular shape centered on the axis of the Group 1-C evaporation source as 4.1.

[Operation] In the invention of the present application, basically, the multiple evaporation sources arranged so that the axis "KtJ!" faces the substrate inside the growth tube, Other evaporation sources
3 when placed closer to the board boulder than in
Both of them are in L7, where Sha and Yu, which originate from Gono ■ Tribes, are abolished. Group V element number, 11. ．． 11 (Plate I-(Is it a group III element? I'2i)" According to this start and stop, the - tag allows the family 24<
The molecular beam fl・I from the raw source of the l group principal is applied to them (
=1 as long as it is controlled by the gloss set
11: (S, 1-ni/jllll171'A'ノ, I, 1
[form the body] In addition, the second invention'(1; l, \th5, pui (
emission i++:j is compared to other evaporation sources U7], (44,'v
To Bolda, l! L1'i< (-z and arrangement jj:'j',
Since there is "C", many surplus molecules are formed into f<"knee to jll old friendship 9rgoto 4f<, J, Daka is fiJ. [Effect of the invention] I-As mentioned above, the invention of jl (L; l:, V h
'＞Tobi" Since we have abolished the luster of the k source, J, (
Considering the V-group evaporation source, which has a large consumption bj and ilQ, considering +, l, and li configurations of the shutter, it is possible to increase the size and increase the capacity without (δ), and (Aλ″ -1 noj
It is possible to prolong life and extend the continuous operation of 11 groups. And ζ, based on the source of the V-group nomaru (nearly anti-Boulder, the power of the dead, C4Fl's 1, Dakahafu LJ, Gonogoto Motoki 1'1ノJ life extension] This C1 two people (wealth - 1j. Also, ■hmunoi, ′: release i11; Since the shutter of j was omitted, the structure of the device ξ is [: r1 abbreviation ′4 In addition, the frequency of maintenance and the frequency of maintenance and the occurrence of troubles/LIJi melons will decrease. Since it is placed at the center facing the substrate holder and the other evaporation sources are arranged in a ring around it, the size of the group Ⅰ evaporation source is determined by the size of the other 7' sources. The growth chamber can be expanded to the center, and the inner surface of one side of the growth chamber can be effectively utilized. The molecular beam copier 4 in this example has a vertical growth chamber 2.
However, the basic configuration of the molecular beam apparatus is the same as the conventional example shown in FIG. The growth chamber 2 has a vertical cylindrical shape as a whole, and has an LTi shaft 1 on a top plate 8. G3I on the ++ supported shaft 9, horizontal! A boss portion 11 of a rotary gauge 10 having a 15-plate boulder 3 at its lower end is rotatably supported. The rotation of the rotation cage 10 is controlled by meshing the gear A 12 fixed to the boss portion 11 with the pyon 14 of the output shaft of the external motor 13. A heater 10 located 11 Nr behind the substrate boulder 3 is installed at the tip of the spindle ORj, and the substrate 13 held in place by the base 1 + anti-boulder 3 is applied to this heater 10. In addition, there is 1 on the inner periphery of the side wall of the liquid nitrogen sear.
1. 4, absorbs impurities during degassing; The bottom of the growth chamber 2 is shaped like a dome with γ1" at the center, and there are several 0 Lua sources in this part. 1°5b, 5cm is its axis Xrk zJ, b,
c is arranged so as to face the center of the 1-base handling polder 3. In the present invention, in particular, an evaporation source 5a whose growth material is a Group I element such as arsenic As is placed opposite to the substrate holder 3. In this example, the axis of the evaporation source 53I is arranged so that it coincides with the vertical center 4jl of the growth chamber 2, and the other evaporation sources i1+;
j5b, 5F is 1-the axis of the group V evaporation source 5a,
” are placed around the circumference of the circle. In Figure 1, 6.
1. In order to avoid ``AU'' in the figure, group a5QAGl
5 a Wolin-(7+'J4:z anti-3Lfj!ll
D (H'+ two luminescent sources tl 1.'), 5c
In fact, there are 5 to 7 evaporation sources of various sizes, each axis 4:l! ) 1 (They are arranged in an annular shape so as to face the center of the plate volta 3. Now, each of the above-mentioned evaporation sources 5 a , 5 b , 5
c... is 1-5:;i fixed to the bottom pa+' of the growth chamber 2).
Each crucible 4 filled with one color is placed in a device Qi' (L
-(+t7i. Then, the present invention C is -1
- The Group II evaporation sources 5 and 1 are placed closer to the substrate boulder 3 than other evaporation ills, but in this example, II dirt is removed from the crucible 4 that is placed in each container. By setting the length in the direction of the force as specified, it is possible to do this against a and ζ.
The crucible 4 (, 1) of the evaporation source 53 is larger in diameter and length than other evaporation sources, especially the crucible 4 (7) , ,
One end of the crucible 4 protrudes from the bottom wall of the growth chamber 2 toward the substrate boulder 3.
・In addition to the desired degree of IJA, a heater (not shown in the figure) placed in the M section of each container containing the crucible 4 is added to the desired degree of IJA. (liquid nitrogen) Lau 16... is formed integrally to prevent each evaporation source 5a, 5b, 5c... from being exposed to heat shadow or contamination from each other.Growth chamber 2 Assuming that ultra-high vacuum is one major condition, Zara I, board 13 and 3J,
and each evaporation source 5 a, 5 b, 5 c... to a predetermined /l! ! r degree''-(5y'/!!), the formation of a foreign source 5a, 51), 5...1 ((A) hits the surface of the substrate in the form of atoms or molecular beams, and crystals are formed on the substrate 10. , but the start and stop of this growth 1, the present invention G31, the evaporation of sources other than 5. This is done by opening and closing the shutter 7. The shutter 7 is connected to each of the emission sources 51), 5(... 31 i) of the barley 1,) which was placed in position 11 and i) respectively, fix the shack plate 7b which can hold 1 in the closed position and 2'( +, , , +7 is formed. In this example, (,1, the axis 7) < p, the shutter 7 opens and closes the shutter 7.
b, 5ζ, · axis N) i) Takumi For C, from the opening 11 of the evaporation source to the no □ (handling boulder 3:1:. ,(
Mulberry 1]: Then, ] 2 The evaporation sources 5b, 5c... are tilted greatly to the side. So・)shi, this, 1,・)6. Biaxial line β is 11. l'
A circular ivy plate 71 is fixed to the shaft 7a so that it can cover the opening 1 of the evaporation source 5 in parallel with the shaft 7a. I wanted to (, 輼7,
The angle of the angle of the Nyanota plate 7b with respect to 1) is the axis 1) of the evaporation source 51) and 5C. This is the angle obtained by subtracting the intersection angle between C and the axis p of the support 7a from the right angle. In this way, when the shirt flap plate 7b is in the closed position (not shown by the solid line in FIG. J, 4 In the case of being close to the inner wall of the chamber 2, and at any rotational position other than the tilted position, the rotation plate 7b will move away from the inner wall of the chamber 2. C+J on the wood row, and shutter 7 Φ
The mountain 7.1 is divided into two parts i'l'll +'ili, and the cylindrical part of the tab ridge 16 is also connected by connecting the flanges 17a and +7b through the support 7a. ), and the first part 721' on the motor side of the shaft 7a and the second part 7 on the shirt plate side, TI, and the flanks 17a and I7b as a part 1i.
i11 In the state where the outside of the IJ room is connected, there is a
The rotating shaft of 11- is introduced through the growth chamber, and the tip of the shaft is inserted into the growth chamber. j ni sha, ri (
ji (-1
In the case of the sorting ivy board 51 mulberry n, ', h, 'l, it was necessary to put the board from the boat into the JQ room and do complicated work such as tightening the screws, but in this example, (11
, -1-, 1, ) axis 7. ] From U7k onwards, one connection of the shank plate 7 is always simple or one-sided, so that the connections can be made substantially outside the growth chamber. It is clear from FIG. 1 that the present invention ((,1,
V group 74 sources 5. '' has been omitted, so for the shutter's 77, i formation - (''; to do 1.51j) It is possible to extend the lifetime of Jl, growth +, I!In addition, compared to other evaporation sources, growth +, I!Jl can be extended. Since the molecular beam is arranged as
Is it possible to crawl indoors?
(Also, in case 11 of clouds, other stem sources ?ll:i are arranged in a circular manner around the group ■ group source 5a.
1, the inner wall of the growth chamber 2 can be used effectively and the equipment can be integrated into a compact C. In addition, in the illustrated example of the four vertical growth chamber, if the i1+; is directly below■
It is said that the origin of the family's origin is considered to be a nku summon!There is a thought, but in fact -1x, ■The emission source functions at low temperature, so even if other elements enter Of course, the scope of the present invention is not limited to the above embodiments. For example, Tonota's J, -
One unit (I11 configuration, etc., various details of the device have been changed iiJ
It is Noh. Example 1: Although the embodiment has a vertical growth chamber, it is also possible to configure the growth chamber in the shape of 47. Figure 1 is a vertical cross-sectional view showing an embodiment of the present invention, and Figure 2 is a schematic configuration diagram showing a conventional example. 2 Growth chamber, 3 - Substrate boulder, 5HI V group element is used as a growth J'L+A material. Evaporation source, 5b, 5 (... (other) evaporation source, 7... shutter,

Claims (2)

[Claims] (1) A growth chamber connected to an ultra-high vacuum pump, a substrate holder placed inside this growth chamber, and a plurality of evaporation sources placed on one side of the growth chamber so that their axes face the substrate holder. Among the evaporation sources, an evaporation source that uses a group V element as a growth material is placed closer to the substrate holder than other evaporation sources; A molecular beam epitaxy apparatus characterized in that a shutter is provided for shielding and opening an opening of each evaporation source other than the evaporation source used as a growth material. (2) In the molecular beam epitaxy apparatus according to claim 2, an evaporation source using the Group V element as a growth material is disposed at a position facing the substrate holder in the growth chamber, and another evaporation source is provided. A molecular beam epitaxy apparatus characterized in that the apparatus is arranged approximately in a ring shape centered on the axis of an evaporation source that uses the Group V element as a growth material.