JPH01248610A - Zinc selenide - Google Patents
Zinc selenideInfo
- Publication number
- JPH01248610A JPH01248610A JP63077839A JP7783988A JPH01248610A JP H01248610 A JPH01248610 A JP H01248610A JP 63077839 A JP63077839 A JP 63077839A JP 7783988 A JP7783988 A JP 7783988A JP H01248610 A JPH01248610 A JP H01248610A
- Authority
- JP
- Japan
- Prior art keywords
- zn5e
- epitaxial film
- substrate
- type
- zinc selenide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 239000002019 doping agent Substances 0.000 claims abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052711 selenium Inorganic materials 0.000 abstract description 4
- 239000011701 zinc Substances 0.000 abstract description 3
- 229910052725 zinc Inorganic materials 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 238000000103 photoluminescence spectrum Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、セレン化亜鉛（Ｚｎ５ｅ）に関し、特に、そ
の伝導型の制御に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to zinc selenide (Zn5e), and particularly to control of its conductivity type.
本発明のセレン化亜鉛は、ドーパントとして酸素を含有
し、これによってｐ型のセレン化亜鉛を得ることができ
る。The zinc selenide of the present invention contains oxygen as a dopant, thereby making it possible to obtain p-type zinc selenide.
Ｚｎ５ｅはＩＩ−Ｖｌ族化合物半導体の一種であり、青
色の発光素子材料として注目されている。このＺｎ５ｓ
は通常の結晶成長ではｎ型のものしか得られず、二のた
め従来よりＰ型のＺｎ５ｅを得る試みが種々なされてい
る。従来、このｐ型Ｚｎ５ｅを得るためのｐ型ドーパン
トとして、リチウム（Ｌｉ）、ナトリウム（Ｎａ） 、
ヒ素（Ａｓ）、リン（Ｐ）、窒素（Ｎ）等の使用が試み
られている。Zn5e is a type of II-Vl group compound semiconductor and is attracting attention as a material for blue light emitting devices. This Zn5s
Only n-type Zn5e can be obtained by normal crystal growth, and for this reason various attempts have been made to obtain P-type Zn5e. Conventionally, lithium (Li), sodium (Na),
Attempts have been made to use arsenic (As), phosphorus (P), nitrogen (N), and the like.
しかしながら、Ｌｉ及びＮａは■結晶中で動きやすい、
■結晶の格子間サイトに入りドナーとして働く等の欠点
がある。また、Ａｓ及びＰはアクセプタ準位が深いため
、そのドープ量を多くする必要があり、この結果いわゆ
るＳ Ａ （ｓｅｌｆ−ａｃｔｉｖａｔｅｄ）欠陥（Ｚ
ｎ空孔と不純物との複合欠陥）が発生しやすいという欠
点がある。さらに、Ｎはアクセプタ準位は約１１０ｍｅ
Ｖと比較的浅いが、このＮはＺｎ５ｅの結晶成長時に結
晶中に取り込まれる率が小さく、ドーピングしにくいと
いう欠点がある。具体例を挙げると、成長時のＮ分圧が
Ｉ Ｘ １０−’Ｔｏｒｒ程度でも、Ｚｎ５ｅ中のＮ濃
度は１０−鳳５〜１０゛鳳−ｃｍ−’程度である。However, Li and Na are easily mobile in the crystal.
■It has drawbacks such as entering the interstitial sites of the crystal and acting as a donor. Furthermore, since As and P have deep acceptor levels, it is necessary to increase their doping amount, resulting in so-called self-activated (SA) defects (Z
It has the disadvantage that compound defects (combined defects of n-vacancies and impurities) are likely to occur. Furthermore, the acceptor level of N is about 110me
Although the depth is relatively shallow compared to V, this N has a drawback that the ratio of N incorporated into the crystal during crystal growth of Zn5e is small and it is difficult to dope. To give a specific example, even if the N partial pressure during growth is about I x 10-' Torr, the N concentration in Zn5e is about 10-5 to 10' Torr.
以上のように、従来使用が試みられているｐ型ドーパン
トはいずれも問題があり、この結果、ｐ型のＺｎ５ｅを
得ることは困難であった。As described above, all of the p-type dopants that have been attempted to be used in the past have had problems, and as a result, it has been difficult to obtain p-type Zn5e.
従って本発明の目的は、ｐ型のＺｎ５ｅを得ることにあ
る。Therefore, an object of the present invention is to obtain p-type Zn5e.
本発明は、ドーパントとして酸素（０）を含有するセレ
ン化亜鉛（ＺｎＳｅ）である。The present invention is zinc selenide (ZnSe) containing oxygen (0) as a dopant.
〔作用］
上記した手段によれば、酸素（０）はセレン（Ｓｅ）と
等原子価のドーパントであることから、そのアクセプタ
準位は約９０ｍｅＶと浅い。このため、ドーパントとし
ての酸素のドープ量を減少させることができるので、Ｓ
Ａ大欠陥発生しにくくなる。また、この酸素は結晶中で
動きにくく、しかも結晶成長時に結晶中に取り込まれや
すい。[Function] According to the above-described means, since oxygen (0) is a dopant with an equivalency as selenium (Se), its acceptor level is as shallow as about 90 meV. Therefore, since the amount of oxygen doped as a dopant can be reduced, S
A Major defects are less likely to occur. Furthermore, this oxygen is difficult to move in the crystal, and moreover, it is easily incorporated into the crystal during crystal growth.
以上により、ｐ型のセレン化亜鉛を得ることができる。Through the above steps, p-type zinc selenide can be obtained.
以下、本発明の一実施例について図面を参照しながら説
明する。An embodiment of the present invention will be described below with reference to the drawings.
第１図に示すように、本実施例においては、超高真空状
態に保たれた分子線エピタキシー（ＭＢＥ）装置ｌ内に
例えばｎ型のガリウムヒ素（ＧａＡｓ ）基板２を配置
し、それぞれＺｎＳＳｅ及びＺｎＯの蒸発源を構成する
クヌードセンセル（Ｋｎｕｄｓｅｎ Ｃｅ１ｌ）ＣＩ、
ＣＩ及びＣ３により発生されるＺｎ、 Ｓｅ及びＺｎＯ
の分子線を上記ＧａＡｓ基板２に照射する。これによっ
て、このＧａＡｓ基板２上に０ドープのＺｎ５ｅエピタ
キシヤル膜３が成長される。なお、このＭＢＥ装置１の
ベース圧力は例えばｉ ｏ−１０〜１０−”Ｔｏｒｒ、
基板温度は例えば２５０″Ｃ程度である。また、クヌー
ドセンセルＣ１、ＣＩ及びＣ３の標準的な温度はそれぞ
れ例えば２５０°Ｃ１１３０°Ｃ及び７００″Ｃである
。この場合、ＺｎＯの分圧は例えばＩ Ｘ １０−’Ｔ
ｏｒｒ程度である。また、成長時間は例えば２時間であ
り、これによって成長されるＺｎ５ｅエピタキシヤル膜
３の膜厚は例えば３μｍ程度である。As shown in FIG. 1, in this example, an n-type gallium arsenide (GaAs) substrate 2, for example, is placed in a molecular beam epitaxy (MBE) apparatus l maintained in an ultra-high vacuum state, and ZnSSe and Knudsen cell (Knudsen Ce1l) CI, which constitutes the evaporation source of ZnO,
Zn, Se and ZnO generated by CI and C3
The GaAs substrate 2 is irradiated with the molecular beam. As a result, a zero-doped Zn5e epitaxial film 3 is grown on the GaAs substrate 2. Note that the base pressure of this MBE apparatus 1 is, for example, i o-10 to 10-''Torr,
The substrate temperature is, for example, about 250"C. The standard temperatures of the Knudsen cells C1, CI and C3 are, for example, 250C, 1130C and 700"C, respectively. In this case, the partial pressure of ZnO is, for example, I x 10-'T
It is about orr. Further, the growth time is, for example, 2 hours, and the thickness of the Zn5e epitaxial film 3 grown thereby is, for example, about 3 μm.
第２図は、上述のようにして成長された０ドープＺｎ５
ｅエピタキシヤル膜３のフォトルミネッセンススペクト
ルの一例を示す、また、第３図は、イオン注入されたＮ
をドーパントとして用いたＮドープＺｎ５ｅエピタキシ
ヤル膜のフォトルミネッセンススペクトルの一例を示し
、第２図との比較のために測定されたものである。これ
らのフォトルミネッセンススペクトルは、励起光源とし
てＨｅ−Ｃｄレーザー（波長３２５０人）を用いて測定
されたものであり、測定は４にで行われた。これらのフ
ォトルミネッセンススペクトルにおいて、ピークａは束
縛励起子（エキシトン）による発光であり、ピークｂは
いわゆるドナー−アクセプタ遷移による発光である。な
お、このピークｂよりも長波長（低エネルギー）側に現
れているピークｃ ”−ｅはいわゆるフォノンレプリカ
である。Figure 2 shows zero-doped Zn5 grown as described above.
FIG. 3 shows an example of the photoluminescence spectrum of the e-epitaxial film 3.
An example of the photoluminescence spectrum of an N-doped Zn5e epitaxial film using Zn5e as a dopant is shown, and was measured for comparison with FIG. These photoluminescence spectra were measured using a He-Cd laser (wavelength: 3250 nm) as an excitation light source, and the measurements were carried out in 4 days. In these photoluminescence spectra, peak a is light emission due to bound excitons, and peak b is light emission due to so-called donor-acceptor transition. Note that the peak c''-e appearing on the longer wavelength (lower energy) side than the peak b is a so-called phonon replica.
第２図と第３図とを比較すると、ピークｂは第３図では
波長約４６００人に現れているのに対し、第２図では波
長４５５０人付近に現れており、約５０人（エネルギー
に換算して約２７ｍｅＶ程度）だけ短波長（高エネルギ
ー）側にシフトしているのがわかる。このことは、０ド
ープＺｎ５ｅエピタキシ中ル膜３中の０のアクセプタ準
位がＮドープＺｎ５ｅエピタキシヤル膜中ＯＮのアクセ
プタ準位よりも約２７ｍｅＶ程度浅いことを示す。従っ
て、Ｏのアクセプタ準位は約９０ｍｅＶ程度と浅い。Comparing Figures 2 and 3, peak b appears at a wavelength of about 4,600 people in Figure 3, whereas it appears at a wavelength of around 4,550 people in Figure 2, and about 50 people (at an energy level). It can be seen that the wavelength is shifted to the shorter wavelength (higher energy) side by about 27 meV (converted to about 27 meV). This indicates that the acceptor level of 0 in the 0-doped Zn5e epitaxial film 3 is about 27 meV shallower than the acceptor level of ON in the N-doped Zn5e epitaxial film. Therefore, the acceptor level of O is as shallow as about 90 meV.
このようにアクセプタ準位が浅いことがら、０のドープ
量を減少させることができ、従ってこの分だけＳＡ大欠
陥発生しにくくなる。Since the acceptor level is shallow in this way, the amount of 0 doping can be reduced, and therefore the SA large defect is less likely to occur.
次に、第４図は上述のようにして成長された０ ゛ドー
プＺｎ５ｅエピタキシャル膜３中の０の分布プロファイ
ルを二次イオン質量分析（ＳＩＭＳ）により測定した結
果を示す。なお、−次イオンとしてはＣｓ″″を用いた
。Next, FIG. 4 shows the results of measuring the zero distribution profile in the zero doped Zn5e epitaxial film 3 grown as described above by secondary ion mass spectrometry (SIMS). Note that Cs″″ was used as the negative ion.
この第４図より、基板温度２５０″Ｃで２時間のエピタ
キシャル成長条件では、Ｚｎ５ｅエピタキシヤル膜３中
の０は成長中にほとんど拡散していないと考えられる。From FIG. 4, it is considered that under the epitaxial growth conditions of 2 hours at a substrate temperature of 250''C, almost no 0 in the Zn5e epitaxial film 3 is diffused during growth.
すなわち、Ｚｎ５ｅエピタキシャル膜３中のＯは動きに
くいことがわかる。また、二次イオンＣ”Ｏ−） の
強度が９．３Ｘ１０’ ｃ／ｓであることから、このＺ
ｎ５ｅエピタキシヤル膜３中の０の濃度は約３． ６
Ｘ １０ ”ｃ′ｍ−’であることがわかる。本実施例
においては、ＺｎＯの分圧が上述のようにＩ Ｘ １０
−’Ｔｏｒｒ程度と低いにもかかわらずこのように高濃
度に０をドーピングすることができ、従ってドーピング
が容易であることがわかる。That is, it can be seen that O in the Zn5e epitaxial film 3 is difficult to move. Also, since the intensity of the secondary ion C''O-) is 9.3X10' c/s, this Z
The concentration of 0 in the n5e epitaxial film 3 is approximately 3. 6
It can be seen that X 10 "c'm-'. In this example, the partial pressure of ZnO is I
It can be seen that 0 can be doped at such a high concentration despite being as low as -'Torr, and therefore doping is easy.
以上より、本実施例によるＺｎ５ｅエピタキシヤル膜３
はｐ型ドーパントとしてＯを含有しているので、従来得
ることが困難であったｐ型のＺｎ５ｅエピタキシヤル膜
３を得ることができる。From the above, the Zn5e epitaxial film 3 according to this example
Since it contains O as a p-type dopant, it is possible to obtain a p-type Zn5e epitaxial film 3, which has been difficult to obtain in the past.
以上、本発明の実施例につき具体的に説明したが、本発
明は、上述の実施例に限定されるものではなく、本発明
の技術的思想に基づく各種の変形が可能である。Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above-described embodiments, and various modifications can be made based on the technical idea of the present invention.
例えば、上述の実施例においてはＭＢＥ法によりＺｎ５
ｅエピタキシヤル膜３の成長を行っているが、この成長
法としては有機金属気相成長（ＭＯＣＶＤ）法を用いる
ことも可能である。また、０を供給するための原料とし
てＯｔを用いることも可能である。さらに、上述の実施
例で用いたｎ型ＧａＡｓ基板２の代わりにｐ型ＧａＡｓ
基板を用いることが可能であることは勿論、例え＆ｆＧ
ｅ基板を用いることも可能である。For example, in the above example, Zn5
Although the e-epitaxial film 3 is grown, it is also possible to use a metal organic chemical vapor deposition (MOCVD) method as this growth method. It is also possible to use Ot as a raw material for supplying 0. Furthermore, a p-type GaAs substrate 2 was used instead of the n-type GaAs substrate 2 used in the above embodiment.
Of course, it is possible to use a substrate, for example &fG
It is also possible to use an e-board.
本発明によれば、ドーパントとして酸素を含有している
ので、アクセプタ準位が浅く、従ってドープ量を減少さ
せることができることによりＳＡ大欠陥発生しにくくな
るとともに、この酸素は結晶中で動きに（く、しかもド
ーピングを容易に行うことができる。これによって、ｐ
型のセレン化亜鉛を得ることができる。According to the present invention, since oxygen is contained as a dopant, the acceptor level is shallow and the amount of doping can be reduced, making it difficult to generate large SA defects. Moreover, doping can be easily performed.
type of zinc selenide can be obtained.
第１図は本発明の一実施例によるｐ型Ｚｎ５ｅエピタキ
シャル膜の成長方法を説明するための断面図、第２図は
第１図に示す方法により成長された０ドープＺｎ５ｅエ
ピタキシヤル膜のフォトルミネッセンススペクトルの一
例を示すグラフ、第３図はＮドープＺｎ５ｅエピタキシ
ヤル膜のフォトルミネッセンススペクトルの一例を示す
グラフ、第４図は第１図に示す方法により成長されたＯ
ドープＺｎ５ｅエピタキシャル膜中の０の分布プロファ
イルをＳＩＭＳにより測定した結果を示すグラフである
。
図面における主要な符号の説明
１：ＭＢＥ装置、 ２：ＧａＡｓ基板、 ３：Ｚｎ５ｅ
エピタキシヤル膜、 Ｃ，〜Ｃ１：クヌードセンセル。
代理人 弁理士 杉 浦 正 知
−鴬抛）列
第１図
４３５０．００ ４４６２．５０ ４５７５．００
４６８７．５０ ４８００．００シ皮長（λ）
７オトルミ狛ン乞ンススベクトｌし
４３５０．００ ４４６２．５０ ４５７５．
００ ４６Ｊ３７．５０ ４８０Ｃ１００シ戻
長（入）
フォＹルミλツ℃ンススベクＹルFIG. 1 is a cross-sectional view for explaining a method of growing a p-type Zn5e epitaxial film according to an embodiment of the present invention, and FIG. 2 is a photoluminescence diagram of a zero-doped Zn5e epitaxial film grown by the method shown in FIG. A graph showing an example of the spectrum, FIG. 3 is a graph showing an example of the photoluminescence spectrum of an N-doped Zn5e epitaxial film, and FIG. 4 is a graph showing an example of the photoluminescence spectrum of an N-doped Zn5e epitaxial film.
3 is a graph showing the results of measuring the distribution profile of 0 in a doped Zn5e epitaxial film by SIMS. Explanation of main symbols in the drawings 1: MBE device, 2: GaAs substrate, 3: Zn5e
Epitaxial film, C, ~ C1: Knudsen cell. Agent Patent Attorney Masaru Sugiura (Tomo - Ogura) Column 1 4350.00 4462.50 4575.00
4687.50 4800.00 Skin length (λ) 7 Otorumi Komabei Suvekkutshi 4350.00 4462.50 4575.
00 46J37.50 480C100 Return length (in)
Claims (1)
レン化亜鉛。Zinc selenide characterized by containing oxygen as a dopant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7783988A JP2712257B2 (en) | 1988-03-30 | 1988-03-30 | How to grow zinc selenide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7783988A JP2712257B2 (en) | 1988-03-30 | 1988-03-30 | How to grow zinc selenide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01248610A true JPH01248610A (en) | 1989-10-04 |
| JP2712257B2 JP2712257B2 (en) | 1998-02-10 |
Family
ID=13645217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7783988A Expired - Fee Related JP2712257B2 (en) | 1988-03-30 | 1988-03-30 | How to grow zinc selenide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2712257B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04234136A (en) * | 1990-08-24 | 1992-08-21 | Minnesota Mining & Mfg Co <3M> | Doping method of group iib - via semicon- conductor, transistor constituted of doped iib - via semiconductor |
-
1988
- 1988-03-30 JP JP7783988A patent/JP2712257B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04234136A (en) * | 1990-08-24 | 1992-08-21 | Minnesota Mining & Mfg Co <3M> | Doping method of group iib - via semicon- conductor, transistor constituted of doped iib - via semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2712257B2 (en) | 1998-02-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3725749A (en) | GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES | |
| US20070126021A1 (en) | Metal oxide semiconductor film structures and methods | |
| Münch et al. | Silicon carbide light-emitting diodes with epitaxial junctions | |
| JP2002503394A (en) | Method for producing p-type and n-type electrically conductive semiconductor nitrogen compounds A (bottom 3) B (bottom 5) | |
| WO2006105281A2 (en) | Metal oxide semiconductor films, structures and methods | |
| US20160099382A1 (en) | Ultraviolet light emitting device doped with boron | |
| JP2908815B2 (en) | Method for doping a wide bandgap semiconductor crystal having a bandgap of at least 1.4 eV | |
| Kolodziejski et al. | Wide-Bandgap II-VI Heterostructures for Blue/Green Optical Sources: Key Materials Issues | |
| KR100421800B1 (en) | Method of manufacturing zinc oxide semiconductor | |
| JPH01248610A (en) | Zinc selenide | |
| Götz et al. | Shallow and deep level defects in GaN | |
| US3873382A (en) | Process for the preparation of semiconductor materials and devices | |
| Asahi et al. | Properties of Molecular Beam Epitaxial InxGa1-xAs (x≈ 0.53) Layers Grown on InP Substrates | |
| US3951700A (en) | Method of manufacturing a gallium phosphide light-emitting device | |
| He et al. | Improved internal quantum efficiency of photoluminescence in zinc ion-implanted ZnO bulk crystals | |
| US3746943A (en) | Semiconductor electronic device | |
| Cederberg et al. | Oxygen-related defects in low phosphorous content GaAs 1− y P y grown by metal organic vapor phase epitaxy | |
| Heath et al. | Cathodoluminescence assessment of GaAs1− x Px for light emitting diodes | |
| Toyama et al. | Green and Red Electroluminescences from Diffused Gallium Phosphide pn Junctions | |
| Scholz et al. | Movpe of Rare Earth Doped III-V Semiconductors | |
| Wu | HgCdTe MBE technology: A focus on chemical doping | |
| Smith et al. | Selenium doping of molecular beam epitaxial GaAs using SnSe2 | |
| WO2007067166A1 (en) | Metal oxide semiconductor devices and film structures and methods | |
| Chang et al. | Fabrication of n-ZnSe/p-Si/n-Si heterojunction phototransistor using IR furnace chemical vapour deposition and its optical properties analysis | |
| USRE29648E (en) | Process for the preparation of electroluminescent III-V materials containing isoelectronic impurities |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |