JPH01245567A - Semiconductor light-receiving device and manufacture thereof - Google Patents
Semiconductor light-receiving device and manufacture thereofInfo
- Publication number
- JPH01245567A JPH01245567A JP63071896A JP7189688A JPH01245567A JP H01245567 A JPH01245567 A JP H01245567A JP 63071896 A JP63071896 A JP 63071896A JP 7189688 A JP7189688 A JP 7189688A JP H01245567 A JPH01245567 A JP H01245567A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- receiving device
- conductivity type
- semiconductor
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 8
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims abstract description 3
- 239000012535 impurity Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 9
- -1 boron ions Chemical class 0.000 abstract description 6
- 238000005468 ion implantation Methods 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 4
- 229910052796 boron Inorganic materials 0.000 abstract description 3
- 238000001459 lithography Methods 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 1
- 125000002524 organometallic group Chemical group 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910052714 tellurium Inorganic materials 0.000 description 4
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical compound [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 description 3
- ILXWFJOFKUNZJA-UHFFFAOYSA-N ethyltellanylethane Chemical compound CC[Te]CC ILXWFJOFKUNZJA-UHFFFAOYSA-N 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229940008718 metallic mercury Drugs 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
この発明は、改良された半導体受光装置の製造方法に関
する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an improved method of manufacturing a semiconductor light receiving device.
（従来の技術）
従来の製造方法による半導体受光装置に第５図に示す構
成のものがおる。即ち、Ｐ形ＣｄＨｇＴｅ （以下、カ
ドミウム・マーキュリ（Ｈｇ）・テルル略してＣ）ＩＴ
と称する）基板（１）上に）ｆＢＥ法により厚さ約０．
２μｍのＣｄＴｅ層（２）が形成される。次に、このＣ
ｄＴｅ１幣（２）上にＩｎを蒸着し信号電極（３）とす
るとともに、熱処理を加えることによって前記ＣＨＴ
ｌ板（１）内にＮ影領域（１１）が形成されている。基
板（１）の他方の下面には、Ａｕ層が蒸着形成されアー
スミ極（４）を構成する。(Prior Art) A semiconductor light receiving device manufactured by a conventional manufacturing method has a structure shown in FIG. That is, P-type CdHgTe (hereinafter, cadmium mercury (Hg) tellurium abbreviated as C)IT
A substrate (1) with a thickness of about 0.0 mm is formed by the fBE method.
A 2 μm CdTe layer (2) is formed. Next, this C
In is vapor-deposited on the dTe1 plate (2) to form a signal electrode (3), and heat treatment is applied to the CHT.
N shadow regions (11) are formed within the L plate (1). On the other lower surface of the substrate (1), an Au layer is formed by vapor deposition to constitute an earth mine pole (4).
以上の構成のもとで、ＣｄＴｅ１Ｗ （２）側から赤外
線を入射すると、Ｃ）ｉＴ ｌ板（１）内で電子・正孔
対が形成され、これが信号電荷となってＰＮ接合面の空
乏層領域を通過し、信号電極（３）から信号が取出され
る。しかしながら、このような構成の半導体受光装置は
Ｉｎが拡散したＣｄＴｅ層（２）もＮ影領域化されるた
め、受光装置としての良好な特性が得られなかった。With the above configuration, when infrared rays are incident from the CdTe1W (2) side, electron-hole pairs are formed in the C)iT l plate (1), which become signal charges and form a depletion layer on the PN junction surface. A signal is extracted from the signal electrode (3). However, in a semiconductor light receiving device having such a configuration, the CdTe layer (2) in which In is diffused also becomes an N shadow region, so that good characteristics as a light receiving device cannot be obtained.
（発明が解決しようとする課題）
以上のように、従来の半導体受光装置はＣｃｆＴｅ層表
面にＰＮ接合面が現れ、変換効率が損なわれるという問
題かめった。(Problems to be Solved by the Invention) As described above, the conventional semiconductor light-receiving device suffers from the problem that a PN junction surface appears on the surface of the CcfTe layer, impairing conversion efficiency.
この発明は、ＣｄＴｅ層に表面保護機能を維持させつつ
、受光装置特性としても良好な機能を持つ半導体受光装
置及びその製造方法を提供することを目的とする。An object of the present invention is to provide a semiconductor light receiving device and a method for manufacturing the same, which have a CdTe layer that maintains a surface protection function and has good light receiving device characteristics.
Ｆ発明の構成１
（課題を解決するための手段）
この発明は、第１に、−導電形化合物半導体Ｃｄ１ＨＪ
Ｔｅ基板と、この基板の表面側の一部に設けられた逆導
電形半導体層と、この半導体層の周囲の前記基板上に設
けられたＣｄＴｅ層とを備えた半導体受光装置において
、前記逆導電形半導体の厚さを、中央部で厚く、その周
囲で薄く構成し、この薄く構成した半導体層の表面を含
んで前記ＣｄＴｅ１層を形成したことを特徴とする。Structure 1 of the F Invention (Means for Solving the Problems) This invention firstly provides a - conductivity type compound semiconductor Cd1HJ.
In a semiconductor light receiving device comprising a Te substrate, a reverse conductivity type semiconductor layer provided on a part of the surface side of this substrate, and a CdTe layer provided on the substrate around this semiconductor layer, the reverse conductivity type semiconductor layer is provided on the substrate. The CdTe1 layer is characterized in that the thickness of the shaped semiconductor is thick at the center and thin at the periphery, and the CdTe1 layer is formed including the surface of this thin semiconductor layer.
また、前記半導体層の厚い部分の表面不純物濃度を、薄
い部分の表面不純物濃度より高くしたこと。または、前
記半導体層の厚い部分の表面の高さを、薄い部分の高さ
より低くしたことを特徴とする。Further, the surface impurity concentration of the thick portion of the semiconductor layer is higher than the surface impurity concentration of the thin portion. Alternatively, the height of the surface of the thick portion of the semiconductor layer is lower than the height of the thin portion.
第２に、この発明の半導体受光装置の製造方法は、−導
電形化合物半導体Ｃｄ１１ｇＴｅ塁板の上にＣｄＴｅ層
を形成する工程と、この工程の後に前記ＣｄＴｅ層の一
部を前記塁仮内に達する深さまでエツチング除去する工
程と、この工程の後に前記エツチング除去された領域及
びそのエツチング除去された領域の周囲の前記ＣｄＴｅ
１ｉに不純物をイオン注入する工程とからなることを特
徴とする。Second, the method for manufacturing a semiconductor light receiving device of the present invention includes a step of forming a CdTe layer on a conductivity type compound semiconductor Cd11gTe base plate, and after this step, a part of the CdTe layer is placed in the base plate. a step of etching the CdTe to a depth of about 100 nm, and after this step etching the CdTe to a depth of
1i.
（作 用）
この発明による半導体受光装置及びその製造方法により
、逆導電形半導体層の厚さを、中央部で厚く、その周囲
で薄く構成された。従って、ＣｄＴｅ層の存在により、
ＰＮ接合部が直接用ることが少なく、また、ＣｄＴｅ層
に接した逆導電形半導体層の面がイオン注入時のダメー
ジが小さく結晶性が損なわれないので、リーク電流が少
ない。更にまた、逆導電形半導体層の厚い部分が中央部
に止まり、周辺部まで広がらないことは、それだけ量子
効率が良くなる作用がある。(Function) According to the semiconductor light receiving device and the manufacturing method thereof according to the present invention, the thickness of the opposite conductivity type semiconductor layer is made thicker at the center and thinner at the periphery. Therefore, due to the presence of the CdTe layer,
Since the PN junction is rarely used directly, and the surface of the opposite conductivity type semiconductor layer in contact with the CdTe layer is less damaged during ion implantation and crystallinity is not impaired, leakage current is small. Furthermore, the fact that the thick portion of the opposite conductivity type semiconductor layer remains in the center and does not extend to the periphery has the effect of improving the quantum efficiency accordingly.
（実施例）
以下、この発明による半導体受光装置の製造方法の一実
施例を図面を参照して詳細に説明する。(Example) Hereinafter, an example of a method for manufacturing a semiconductor light receiving device according to the present invention will be described in detail with reference to the drawings.
第１図はこの発明による製造方法の一実施例による半導
体受光装置を示す構成断面図である。第１図は赤外線セ
ンサーとしての半導体受光装置を示すものである。即ち
、製造手順を説明すれば、Ｃｄの組成成分の割合いをＸ
として表したとぎ、Ｘ＝約０．２のＰ形Ｃｄ、Ｈ（］１
．丁ｅ単結晶基板、即ちＣＨＴ ｌ板■上に）ＩＯｃＶ
Ｄ （有機金属化学気相成長）法により、ＣｄＴｅ層（
２）を約０．２μｍの薄い厚さにエピタキシャル成長に
より形成する。Ｃｄ Ｔｅ層（２）の形成に当たっては
、Ｃｄを原料としてジメチルカドミウムを、Ｔｅを原料
としてジエチルテルル又はジイソプロピルテルルを夫々
使用し、キャリアガスとしては水素ガスを用いる。なお
、このときの基板成長温度は３４０〜３９０℃とした。FIG. 1 is a sectional view showing a structure of a semiconductor light receiving device according to an embodiment of the manufacturing method according to the present invention. FIG. 1 shows a semiconductor light receiving device as an infrared sensor. That is, to explain the manufacturing procedure, the proportion of the Cd composition is
When expressed as, P-type Cd with X=about 0.2, H(]1
．． IOcV on a single crystal substrate, that is, a CHT plate
A CdTe layer (
2) is formed by epitaxial growth to a thin thickness of about 0.2 μm. In forming the Cd Te layer (2), dimethyl cadmium is used as a raw material for Cd, diethyl tellurium or diisopropyl tellurium is used as a raw material for Te, and hydrogen gas is used as a carrier gas. Note that the substrate growth temperature at this time was 340 to 390°C.
次に、レジストをおき、ＣｄＴｅ層（２）の一部をリソ
グラフィ技術を用いて直径的７００μｍ、深さ約０．５
μｍで前記Ｃ）ＩＴ領領域達する所までエツチング除去
する。Next, a resist is placed and a part of the CdTe layer (2) is 700 μm in diameter and approximately 0.5 in depth using lithography technology.
Etching is performed to reach the C) IT region in micrometers.
そこで一般に、不純物のイオン注入によりＰＮ接合領域
を形成するとき、第２図に示すように、その加速電圧の
増加とともにキャリア数の最大値は深い位置に移動する
ので、加速電圧の制御によってＣｄＴｅ層（２）のキャ
リア数をそれ程増加さぜることなく、即ち高抵抗を維持
した状態でＣト汀層〔１）だけを逆導電形に変換可能で
ある。Generally, when a PN junction region is formed by ion implantation of impurities, the maximum number of carriers moves to a deeper position as the accelerating voltage increases, as shown in Figure 2. Therefore, by controlling the accelerating voltage, the CdTe layer It is possible to convert only the C top layer [1] to the opposite conductivity type without significantly increasing the number of carriers in (2), that is, while maintaining high resistance.
従って、エツチングで除去後、８１０マスクによリ、そ
の除去領域とは同心円をなした半径的９００μｍの大き
さの領域にホウ素イオンを注入し、Ｎ影領域（１１）を
形成する。このとぎのイオン注入条件は、力ｌ速電圧１
５０ＫｅＶ、イオン）開度Ｉ Ｘ １０１４ｃｍ−２と
した。Therefore, after removal by etching, boron ions are implanted into a region having a radius of 900 μm and concentric with the removed region using an 810 mask to form an N shadow region (11). The next ion implantation conditions are force l speed voltage 1
50 KeV, ion) opening degree I x 1014 cm-2.
この結果、第１図に示したように、逆導電形のＮ形半導
体領域（１１）の中央部を厚く、その周囲で薄く溝成し
、この薄く構成した半導体層の表面を含んで前記ＣｄＴ
ｅ層（２）が形成される。As a result, as shown in FIG. 1, the central part of the N-type semiconductor region (11) of the opposite conductivity type is thick, and a thin groove is formed around it, and the CdT
An e-layer (2) is formed.
従って、ＣｄＴｅ層に接する逆導電形半導体層のイオン
注入時の結晶破壊少なくリーク電流が少なく４ｒる効果
がある。また、逆導電形半導体層の厚い部分が中央部に
止まり、周辺部まで広からないことは、それだけ量子効
率が良くなる効果が得られる。Therefore, there is an effect of less crystal breakdown during ion implantation of the opposite conductivity type semiconductor layer in contact with the CdTe layer, and less leakage current. Furthermore, the fact that the thick portion of the opposite conductivity type semiconductor layer remains in the center and does not extend to the periphery has the effect of improving the quantum efficiency.
また、Ｎ形領域電極即ち信号電極（３）にはＩｎ。In addition, the N-type region electrode, that is, the signal electrode (3) is made of In.
Ｐ形領域電極即ちアース電極（４）には酊を使用した。The P-type area electrode, ie, the ground electrode (4), was made of porcelain.
この結果、赤外線センサーとしての性能を表すピロバイ
アス時のダイオード抵抗面積積（１？ｏ Ａ）は絶対温
度７７１（のとのきに１０００・ｃｔｒｒに、また、分
光相対感度は第３図に示したようになり、そのカットオ
フ波長は約１０．４μｍであった。As a result, the diode resistance area product (1?o A) at pyrobias, which indicates the performance as an infrared sensor, is 1000 ctrr at an absolute temperature of 771 (and the relative spectral sensitivity is shown in Figure 3). The cutoff wavelength was approximately 10.4 μm.
この発明方法による半導体受光装置は、上記の構成とな
るので、赤外線センサーのＰＮ接合部分が直接的には大
気にさらされない等の結果、漏れ（リーク）電流が少な
く、量子効率も良く、また、ＲＯＡ値が大きく良好なも
のが得られる。Since the semiconductor light receiving device according to the method of this invention has the above configuration, the PN junction part of the infrared sensor is not directly exposed to the atmosphere, resulting in low leakage current and good quantum efficiency. A good product with a large ROA value can be obtained.
第４図はこの発明方法の他の実施例で得られた半導体受
光装置を示す構成断面図でおる。第３図において、まず
、ＣｄＴｅ単結晶基板（５）にＨＯＣＶ Ｄ法により、
Ｘが約０．２のＰ形ＣｄＨｇ Ｔｅ層即ちＣＨ８×１
０ｘ
基板（１）を気相成長にて形成する。Ｃ）ｆＴ基板（１
）の成長形成には、Ｃｄを原料としてジメチルカドミウ
ムを、ｌ１ｇを原料としては金属水銀を、また、Ｔｅを
原料としてはジエチルテルル又はジイソプロピルテルル
を用いた。なお、このときの基板成長温度は３６０〜４
２０℃で成長膜厚は約１０μｍであった。FIG. 4 is a cross-sectional view showing the structure of a semiconductor light receiving device obtained by another embodiment of the method of this invention. In FIG. 3, first, a CdTe single crystal substrate (5) was coated by the HOCV D method.
P-type CdHg Te layer with X about 0.2, i.e. CH8×1
0x Substrate (1) is formed by vapor phase growth. C) fT substrate (1
), dimethyl cadmium was used as a raw material for Cd, metallic mercury was used as a raw material for l1g, and diethyl tellurium or diisopropyl tellurium was used as a raw material for Te. Note that the substrate growth temperature at this time was 360 to 4
The film thickness grown at 20° C. was approximately 10 μm.
ＣＨＴ ｌ板（１）の成長形成に続いて、ＣｄＴｅ層（
２）を積層する。ＣＣｌＴｅ層〔２）の積層には、同様
にＣｄを原料としてジメチルカドミウムを、１ｅを原料
としてはジエチルテルル又はジイソプロピルテルルを用
いた。なお、このときの基板成長温度は３４０〜３９０
°Ｃで成長膜厚は約０．２μｍであった。Following the growth formation of the CHT l plate (1), the CdTe layer (
2) is laminated. For laminating the CClTe layer [2), dimethyl cadmium was similarly used as the raw material for Cd, and diethyl tellurium or diisopropyl tellurium was used as the raw material for 1e. Note that the substrate growth temperature at this time was 340 to 390°C.
The film thickness grown at °C was about 0.2 μm.
そこで、ｃｄｒｅ層（２）の一部を同様にリソグラノイ
技術を用いて直径約７００μｍ、深さ約０．５μｍでＣ
）ＩＴ層（１）に達する所までエツチング除去し、エツ
チング除去後、その除去領域とは同心円をなした半径的
９００μｍの大きさの領域にホウ素イオンを注入し、逆
導電形のＮ影領域（１１）を形成する。Therefore, a part of the cdre layer (2) was also coated with carbon dioxide using lithography technology to form a layer with a diameter of approximately 700 μm and a depth of approximately 0.5 μm.
) The etching is removed until it reaches the IT layer (1), and after the etching removal, boron ions are implanted into a 900 μm radius region concentric with the removed region to form an N shadow region of the opposite conductivity type ( 11).
このときのイオン注入条件は、加速電圧１５０にｅＶ。The ion implantation conditions at this time were an acceleration voltage of 150 eV.
イオン濃度１ ）＜１０１４ｃｍ−２とした。また、信
号電極（３）にはＩｎ、アース電極〔４）にはＡｕを使
用した。Ion concentration 1)<1014 cm-2. Furthermore, In was used for the signal electrode (3), and Au was used for the ground electrode [4].
この結果、赤外線センサーとしての性能を表すゼロバイ
アス時のダイオード抵抗面積積（Ｒｏ Ａ）は７７にの
とのきに１５０Ω・ｃｔｒｔ、また、分光感度特性によ
るカットオフ波長は約９．５μｍであり、前記実施例と
同様な効果が１４られた。As a result, the diode resistance area product (Ro A) at zero bias, which indicates the performance as an infrared sensor, is 150 Ω・ctrt at 77, and the cutoff wavelength according to the spectral sensitivity characteristics is approximately 9.5 μm. , 14 effects similar to those of the previous example were obtained.
なお、この発明の装置及び製造方法は上記各実施例に限
るものではなく、例えば、ＣｄＴｅ層（５）の成分の中
に微量の亜鉛を混入させ、ＣＨＴ層（１）と格子定数の
一致を図り、不整合割合いを０．１％以下とするなど、
更に優れた半導体受光装置を（ｑることが可能である。Note that the apparatus and manufacturing method of the present invention are not limited to the above embodiments; for example, a trace amount of zinc may be mixed into the components of the CdTe layer (5) to match the lattice constant with the CHT layer (1). We aim to reduce the inconsistency rate to 0.1% or less, etc.
It is possible to create an even better semiconductor photodetector.
［発明の効果］
以上説明のように、この発明による半導体受光装置は、
逆導電形半導体層の厚さを、中央部で厚く、その周囲で
薄く構成した結果、リーク電流が少なく、また量子効率
が良好なものが得られる等実用上の効果大である。[Effects of the Invention] As explained above, the semiconductor light receiving device according to the present invention has the following effects:
As a result of configuring the opposite conductivity type semiconductor layer to be thick at the center and thin at the periphery, there are great practical effects such as less leakage current and good quantum efficiency.
第１図はこの発明による半導体受光装置の一実施例を示
す構成図、第２図は第１図に示した装置のキャリア）開
度特性図、第３図は第１図に示した装置の分光特性図、
第４図はこの発明による半導体受光装置の他の実施例を
示す構成図、第５図は従来の半導体受光装置のを示す構
成図でおる。
（ｔ） ・ｐ形Ｃｄ１ｌ（ｌＴｅ基板
（１１）・・・Ｎ影領域
（２）・・・ＣｄＴＯ層
（３）・・・信号電極
（４）・・・アース電極FIG. 1 is a block diagram showing an embodiment of a semiconductor light receiving device according to the present invention, FIG. 2 is a carrier opening characteristic diagram of the device shown in FIG. 1, and FIG. 3 is a diagram of the opening degree characteristic of the device shown in FIG. Spectral characteristic diagram,
FIG. 4 is a block diagram showing another embodiment of the semiconductor light receiving device according to the present invention, and FIG. 5 is a block diagram showing a conventional semiconductor light receiving device. (t) ・P-type Cd1l (lTe substrate (11)...N shadow area (2)...CdTO layer (3)...signal electrode (4)...earth electrode
Claims (4)
基板の表面側の一部に設けられた逆導電形半導体層と、
この半導体層の周囲の前記基板上に設けられたＣｄＴｅ
層とを備えた半導体受光装置において、前記逆導電形半
導体の厚さを、中央部で厚く、その周囲で薄く構成し、
この薄く構成した半導体層の表面を含んで前記ＣｄＴｅ
層を形成したことを特徴とする半導体受光装置。(1) a one conductivity type compound semiconductor CdHgTc substrate, an opposite conductivity type semiconductor layer provided on a part of the surface side of this substrate,
CdTe provided on the substrate around this semiconductor layer
In the semiconductor light receiving device comprising a layer, the opposite conductivity type semiconductor is thick at the center and thin at the periphery,
The CdTe including the surface of this thinly structured semiconductor layer
A semiconductor light receiving device characterized by forming a layer.
い部分の表面不純物濃度より高くしたことを特徴とする
請求項１記載の半導体受光装置。(2) The semiconductor light receiving device according to claim 1, wherein the surface impurity concentration of the thick portion of the semiconductor layer is higher than the surface impurity concentration of the thin portion.
分の高さより低くしたことを特徴とする請求項１記載の
半導体受光装置。(3) The semiconductor light receiving device according to claim 1, wherein the height of the surface of the thick portion of the semiconductor layer is lower than the height of the thin portion.
ｄＴｅ層を形成する工程と、この工程の後に前記ＣｄＴ
ｅ層の一部を前記基板内に達する深さまでエッチング除
去する工程と、この工程の後に前記エッチング除去され
た領域及びそのエッチング除去された領域の周囲の前記
ＣｄＴｅ層に不純物をイオン注入する工程とからなる半
導体受光装置の製造方法。(4) C on one conductivity type compound semiconductor CdHgTe substrate
A step of forming a dTe layer, and after this step, the CdT layer is formed.
a step of etching away a part of the e-layer to a depth that reaches into the substrate; and a step of ion-implanting impurities into the etched region and the CdTe layer surrounding the etched region after this step; A method of manufacturing a semiconductor light receiving device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63071896A JP2798927B2 (en) | 1988-03-28 | 1988-03-28 | Semiconductor light receiving device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63071896A JP2798927B2 (en) | 1988-03-28 | 1988-03-28 | Semiconductor light receiving device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01245567A true JPH01245567A (en) | 1989-09-29 |
| JP2798927B2 JP2798927B2 (en) | 1998-09-17 |
Family
ID=13473753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63071896A Expired - Fee Related JP2798927B2 (en) | 1988-03-28 | 1988-03-28 | Semiconductor light receiving device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2798927B2 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5279893A (en) * | 1975-12-23 | 1977-07-05 | Telecommunications Sa | Semiconductor device and method of assembling same |
| JPS5753633A (en) * | 1980-07-30 | 1982-03-30 | Telecommunications Sa | Photoelectromotive detector sensitive to near infrared region |
| JPS6332970A (en) * | 1986-07-25 | 1988-02-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS6354778A (en) * | 1986-08-25 | 1988-03-09 | Fujitsu Ltd | Infrared ray detector |
| JPS63237484A (en) * | 1987-03-25 | 1988-10-03 | Mitsubishi Electric Corp | Semiconductor device |
-
1988
- 1988-03-28 JP JP63071896A patent/JP2798927B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5279893A (en) * | 1975-12-23 | 1977-07-05 | Telecommunications Sa | Semiconductor device and method of assembling same |
| JPS5753633A (en) * | 1980-07-30 | 1982-03-30 | Telecommunications Sa | Photoelectromotive detector sensitive to near infrared region |
| JPS6332970A (en) * | 1986-07-25 | 1988-02-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS6354778A (en) * | 1986-08-25 | 1988-03-09 | Fujitsu Ltd | Infrared ray detector |
| JPS63237484A (en) * | 1987-03-25 | 1988-10-03 | Mitsubishi Electric Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2798927B2 (en) | 1998-09-17 |
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