JPH01243547A - Electronic device - Google Patents

Abstract

PURPOSE:To eliminate the occurrence of electromigration or stress migration and a hillock in an electronic device by a method wherein an aluminum film or the like manufactured by a prescribed thermal CVD method is used for a wiring part of the device. CONSTITUTION:An aluminum film or an aluminum alloy film 17 whose flatness is good is formed on a silicon substrate 11. The alloy film 17 is a film manufactured by a thermal CVD method used to form a film on the surface of the substrate 11 due to a second-stage thermal change on the surface of the heated substrate 11. By this setup, electromigration or stress migration and a hillock are not caused in a device.

Description

[Detailed description of the invention]

(Industrial Application Field) The present invention is directed to the improvement of electronic devices such as sensors, memories, semiconductor integrated circuits for information processing, and optoelectronic devices that use aluminum films or aluminum alloy films as wiring materials. (Conventional technology and problems to be solved) Many conventional electronic devices use aluminum films made by vacuum evaporation or sputtering as wiring materials because of their low resistivity and good stability. It is used after cleaning. However, when an aluminum film fabricated by the above method is used as a wiring material in a silicon semiconductor device, interdiffusion between silicon and aluminum in the substrate becomes large, resulting in poor stability at the contact area (this is called penetration) and electromagnetic interference. Since migration and stress migration occur, an aluminum-silicon alloy film is used as the wiring material to prevent this. Here, the aluminum-silicon alloy includes a film in which silicon is segregated between aluminum-silicon branes. For example, FIG. 4 shows a conventionally known N-type silicon gate MOS (Metal Oxi[le Sem1
This figure shows a structural diagram of Ct, or・). 11 is a p-type silicon substrate doped with boron; 12 is the substrate 11 in a high-temperature atmosphere; when the silicon is grown, 13 is buttered with silicon oxide film 12; 14 is a silicon oxide film grown on the N'' layer 13 by CVD method, and 15 is a silicon oxide film grown in a high temperature oxygen atmosphere after buttering the silicon oxide film 14. 16 is a polysilicon gate layer grown on the gate oxide film 15; 17 is aluminum as a wiring material formed on the entire surface of the substrate 11 by vapor deposition, sputtering, thermal CVD, etc. film or aluminum silicon alloy film (hereinafter referred to as aluminum film etc.), 18 is an aluminum film etc. 170 silicon tungsten film formed by CVD method or sputtering method to reduce surface reflectance;
19 is a passivation film such as silicon nitride. The film thickness of the aluminum film 17 formed by vapor deposition or sputtering as a wiring material for a semiconductor device having the above-mentioned structure is normally about 1 μin when used as a wiring material for an electronic device. : As shown here 1.
A brane 20 of around 511m is formed. When two lanes 20 are formed, electromigration occurs from the joints between the lanes 20, which changes the characteristics of the electronic device and, in some cases, causes disconnection or short-circuiting of the wiring. Furthermore, hillocks (
A hill-like protrusion) may appear. Therefore, in recent years, attempts have been made to improve the characteristics of the joint by adding steel to this aluminum-silicon alloy and segregating this copper at the joint of the brain, thereby preventing the occurrence of electromigration and stress migration. It is being However, when copper is added as described above, copper remains as an etching residue when dry etching is performed for buttering the aluminum-silicon-steel alloy film. Therefore, ion sputter etching can be used in combination to remove this copper, but this may damage the resist or cause changes in device characteristics due to high-energy ion irradiation. On the other hand, attempts have been made to reduce the grain size, and when nitrogen is introduced and added during sputtering, the grain size becomes approximately 0.5 μn1, which can be reduced somewhat compared to the conventional method. However, there is a strong possibility that the nitrogen may be mixed into the film, and this cannot be essentially improved. Further, the growth of aluminum films etc. 17 by thermal CVD is introduced in the following literature by Hashigashi. (1) rLPCVD ALUMINUM FORV
LSI PROC'ESSINGJR, A, Levy
and M, L, GreenJ, Electro
chem, Soc, 134 (1987) P37c(2)
rLPCV of Aluminum and A
l-5i A11oysfor Sem1condu
ctor MetallizationJM, J, Co
oke R, A, 1 (einecke R, C
,5ternSolid 5tateTechnol
ogyDecember1982 PO2-65 The thermal CVD methods shown in the above documents (1) and (2) both use a similar hot wall type CVD apparatus. That is,
A reaction chamber made of quartz glass tube; the substrate is heated in a furnace or the like from outside the quartz glass tube, and the process gas is flowed in the axial direction of the quartz glass tube. This creates an aluminum film. This improves step coverage, but since the surface of the fabricated film is rough (10-20% reflectance), bonding between the branes is poor and electromigration and stress migration occur.Furthermore, The cluster ion beam evaporation method and magnetron plasma CVD method introduced in the following documents are known as methods that can produce aluminum films with good surface flatness: (3) AI film formation and crystallization by rlcB method "Sex Control" Yamada, Takagi Monthly Sem1conductor World (Japanese board) March issue (1987) P75 The method shown in the document generates clusters in a high vacuum by heating a crucible containing aluminum, The cluster beam is ionized by electron bombardment and then irradiated onto the substrate as a −r-on cluster beam to form a film. However, the aluminum film produced by this method is different from the cross-sectional view shown in As shown in Figure 2, there is a risk of wire breakage due to the poor coverage of the stepped portion 21, and it cannot be used for wiring of electronic devices. (Japanese version) March issue (1987) P84 The method shown in this document is to ground a rotating N-pole and S-pole magnet on the back side of a substrate holder at ground potential, and to attach a magnet at a position opposite to the substrate. Magnetron plasma CVD is performed by applying high-frequency power to the gas blowing part. According to this method, carbon is mixed in the aluminum film on the order of several percent, and the resistivity is low. is 4-10
It is large as μΩ・em. For this reason, the low specific resistance (2.7 μΩ·cm), which is an original feature of aluminum wiring, cannot be effectively used, and aluminum is not suitable as a wiring material. (Objective of the present invention) An object of the present invention is to reduce electromigration and stress by using an aluminum film, etc., which has few branes, good surface flatness, and excellent step coverage as a wiring material for electronic devices. The object of the present invention is to prevent migration and hillocks and provide a stable electronic device. (Means for Solving the Problems) In order to achieve the above object, the present invention is configured as follows. That is, in an electronic device having a wiring material made of an aluminum film or an aluminum alloy film, the aluminum film or aluminum alloy film heats a predetermined gas to cause a first thermal change, and then the substrate surface is heated. The film is produced by a thermal CVD method in which the film is formed on the surface of the substrate by a second stage of thermal change on the surface of the substrate. (Example) Figure 1 shows the state of an aluminum film etc. produced as a wiring material for an electronic device according to the present invention.
The figure is a sectional view showing step coverage of an aluminum film, etc., and FIG. 3 is a front sectional view of a thermal CVD apparatus used for producing the aluminum film, etc. The structure of the electronic device according to this embodiment is the same as that of the conventional device shown in FIG. 4, so a description thereof will be omitted. Further, the same reference numerals are used for the same components as in FIG. 4. As shown in FIG. 1, an aluminum film or the like 17 with good flatness is formed on the silicon substrate 11. In order to fabricate this aluminum film etc. 17, heat C as shown in FIG.
Use a VD device. Reference numeral 1 denotes a processing chamber, which has an airtight structure. 3 is inside the processing chamber 1: the installed substrate 11
This is a substrate holder that holds the temperature of the substrate 11 and adjusts the temperature of the substrate 11. To explain the configuration of the temperature adjustment mechanism 20 that adjusts the temperature of the substrate holder 3, 4 is a heater that heats the gas holder 3 by resistance heating (this may also be done by other heating methods such as radiation heating), A thermocouple 5 monitors the temperature of the substrate holder 3. A temperature measuring resistor may be used instead of the thermocouple 5 as a temperature monitor. The signal measured by the thermocouple 5 is controlled by PID control (not shown), PI
The power is input to a control circuit such as control, ON-OFF control, etc., and the input power to the heater 40 is adjusted using a thyristor or relay to adjust the temperature of the substrate holder 3. When necessary, the substrate holder 3 can be cooled and the temperature can be adjusted by both heating and cooling methods. A predetermined gas 8 is introduced into the processing chamber 1 from a gas supply device (not shown) through a valve 7. In order to uniformly supply this gas 8 to the gas surface, there are multiple gas passages and Speech bubble. A distribution plate 31 with one hole is provided. A temperature adjustment mechanism 40 is embedded in this distribution plate 31. The temperature adjustment mechanism 40 mainly includes a heating means 41 provided on the distribution plate 31, a temperature monitor 42, and a feedback control means (not shown).
The distribution plate 31 is heated from the atmospheric pressure side by resistance heating using a heater 32. The same effect can be obtained even if radiation heating is performed using a halogen lamp or the like instead of resistance heating. Heater 32 is insulated from distribution plate 31 using insulating powder 34 . The insulating powder 34 may be alumina or the like, but in consideration of the conductivity of heat from the heater, it is better to use magnesia powder. Although the feedback control means is not shown, the signal obtained by measuring with the thermocouple 33 is fed back to the control circuit such as PID control, PI sub-control 0N-OFF control, etc., and the peak 320 input is performed using a thyristor or relay. A configuration is adopted in which the temperature of the distribution plate 31 is controlled by adjusting the electric power. Note that 35 is a lid for fixing the insulating powder 34. In order to produce the aluminum film 17 as a wiring material using the apparatus having the above-mentioned configuration, it is performed under the following film-forming conditions, for example. The pressure inside the processing chamber 1 was set to 2 Torr, triisobutylaluminum was used as the introduced gas, argon (flow rate 50 to 200 sec cm) was used as the carrier gas, the gas cylinder was set at 50 to 90°C, and the distribution plate 31 was set at 230°C. The temperature is set to give a "first stage thermal change" to triisobutylaluminum, and then it is supplied to the surface of the substrate 11 which is heated to 350 to 400°C. As a result, a "second stage thermal change" occurs on the surface of the substrate 110, and the aluminum film 17 can be formed on the substrate 11 at a rate of 1 μm/min. The surface of the film 170 is extremely flat compared to the conventional examples (1) and (2) related to thermal CVD described above. That is, the surface reflectance of the films produced by Conventional Examples (1) and (2) is approximately 10 to 20%, and the surface is extremely uneven and rough when observed by SEN. On the other hand, the aluminum film etc. according to the present invention has a film thickness of 1
At 220-8001 m light in μm, the surface reflectance is
It is over 95%. This has better flatness than the film produced by the conventional sputtering method. Furthermore, as shown in FIG. 1, the aluminum film 17 formed on the substrate 11 is different from a sputtered film in SEM observation, and the film is so thick that the branes 20 as shown in FIG. 5 cannot be observed. Can be done. Furthermore, when fabricated under the above film formation conditions, Si (crystal orientation 1
11 plane) It is possible to epitaxially grow AI (crystal orientation 111 plane) on a substrate, and a streak pattern can be obtained by RHEED. Alternatively, it is possible to epitaxially grow Al-5i (crystal orientation 100) on a St (crystal orientation 100) substrate. Furthermore, as shown in Fig. 2, in the case of Fig. 6 where the film was formed by the cluster ion beam evaporation method, the level difference 2 was significantly reduced compared to the case shown in Fig. 6.
The coverage of all wires was improved, and there was no risk of wire breakage. Furthermore, by controlling the parameters of the specific resistance of the film using the above-mentioned apparatus, a specific resistance of 2.7 μΩ·0 can be easily obtained even with a film thickness of 1 μm with good flatness. Further, the amount of carbon mixed in is also low, at about 20 ppm or less. This film was heated at 430°C for 4 hours in a N2 atmosphere.
Although annealing was performed for 0 minutes, no hillocks were observed. This is a very superior feature compared to films produced by sputtering. The aluminum film etc. produced by the above-mentioned apparatus has good flatness, little impurity contamination, and excellent step coverage and crystallinity, making it ideal as a wiring material for electronic devices. When manufacturing an electronic device, the method described above is used; after forming an aluminum film as a wiring material for the device, etching and buttering the film, and applying a conventional 2-wire wire on top of the film. As in the case of the aluminum material, about 200 tungsten silicon films 18 are deposited by CVD or sputtering. This is done in order to lower the surface reflectance so that exposure and patterning will not become impossible due to the high reflectance of the aluminum film and the like. In the above embodiments, a semiconductor device using an aluminum film or the like as a wiring material has been described, but the present invention is not necessarily limited to this, and includes a wide variety of electronic devices such as optoelectronic devices. (Effect of the invention) According to the claim, a predetermined thermal CVD process is applied to the wiring of an electronic device.
By using an aluminum film or the like produced by this method, electromigration, stress migration, and hillocks will not occur in the device.

[Brief explanation of the drawing]

Figure 1 is a partial perspective view of an aluminum film etc. produced as a wiring material for an electronic device according to the present invention, and Figure 2 is a thermal CVD
FIG. 3 is a cross-sectional view showing step coverage of an aluminum film, etc. produced by the method, and FIG. 3 is a front sectional view of a CVD apparatus used for producing the aluminum film, etc., and FIG. Fig. 5 is a partial perspective view of an aluminum film fabricated by sputtering, and Fig. 6 is a cross section showing step coverage of an aluminum film fabricated by cluster ion beam evaporation. It is a diagram. 11...Substrate, 12...Silicon oxide film, 13...
- No, 17-... Aluminum film or aluminum-silicon alloy film. Patent Applicant Nichiden Anelva Co., Ltd. Agent Patent Attorney Murakami 1st Year 10 Dandai 6th Dai 2nd Year 30 Ya 4th Tanya 50 Procedural Amendment (Method) % Formula % 1. Indication of Case Patent Application 1986- 71160 No. 2, Title of the invention Electronic device 3, Relationship to the amended person's case Patent applicant address 5-8-1 Yotsuya, Fuchu-shi, Tokyo Name Nichiden Anelva Co., Ltd. Representative An 1) Shin 4, Agent. Address: 5-8-1 Yotsuya, Fuchu-shi, Tokyo - 5, Date of amendment order: -4j 1939
June 28, 3rd year (shipment date) 6. Subject of amendment: Meiji Charter. Electronic Device 2, Claims In an electronic device having a wiring material made of an aluminum film or an aluminum alloy film, the aluminum film or aluminum alloy film first causes a first stage of mature womanization by heating a predetermined body. 1. An electronic device characterized in that the film is produced by a thermal CVD method, in which the film is supplied to the surface of a substrate after heating, and the film is formed on the surface of the substrate by a second-stage thermal change on the surface of the heated substrate. 3. Detailed Description of the Invention (Field of Industrial Application) The present invention relates to electronic devices such as sensors, semiconductor integrated circuits that perform memory information processing, photoelectronic devices, etc. that use aluminum films or aluminum alloy films as wiring materials. We are currently working on improving this. (Conventional technology and problems to be solved) Most conventional electronic devices are patterned using aluminum films made by vacuum evaporation or sputtering as wiring materials because of their low resistivity and good stability. It is used as However, when an aluminum film fabricated by the above method is used as a wiring material in a silicon semiconductor device, interdiffusion between silicon and aluminum in the substrate becomes large, resulting in poor stability at the contact area (this is called penetration) and electromagnetic interference. Since migration and stress migration occur, an aluminum-silicon alloy film is used as the wiring material to prevent this. Here, the aluminum-silicon alloy includes a film in which silicon is precipitated between aluminum-silicon branes. For example, the fourth [! l is a conventionally known N-type silicon gate MOS (Metal Oxide SEM
1 conduct, or) structure I! 1 is shown. 11 is a P-type silicon substrate doped with boron, 12 is a silicon oxide film grown by exposing the substrate 11 to a high-temperature atmosphere, and 13 is a silicon oxide film 12 that has been patterned. N″ formed by ion implantation of phosphorus
The layer 14 is a silicon oxide film grown on the N'' layer 13 by the CVD method, 15 is a gate oxide film grown by exposing it to a high temperature oxygen atmosphere after patterning the silicon oxide film 14, and 1G is a silicon oxide film grown on the N'' layer 13 by CVD. A polysilicon gate layer 17 grown on the gate oxide film 15 is deposited on the entire surface of the substrate 1.
Formed from here using sputtering method, thermal C, VD method, etc.
18 is an aluminum film, etc. 170 CV is used to reduce the surface reflectance.
A silicon tungsten film is formed by the D method or the sputtering method, and 19 is a padding film made of silicon nitride or the like. The film thickness of the aluminum film 17 formed by vapor deposition or sputtering as a wiring material for a semiconductor device having the above structure is usually about 1 μm, but the thickness of the aluminum film 17 is usually about 1 μm. As shown in the figure, ζ is 1.5
A brane 20 of approximately μm size is formed. When such branes 20 are formed, electromigration occurs from the joints between the branes 20, which may change the characteristics of the electronic device or, in some cases, cause wire breakage or short circuit. Furthermore, hillocks (hill-shaped protrusions) may occur on the aluminum wiring due to annealing required in a post-process. Therefore, in recent years, attempts have been made to improve the characteristics of the joint by adding steel to this aluminum-silicon alloy and segregating this copper at the joint of the brain, thereby preventing the occurrence of electromigration and stress migration. It is being However, when copper is added as described above, when dry etching is performed for patterning the aluminum-silicon-copper alloy film, the steel remains as etching residue. Therefore, ion sputter etching can be used in combination to remove this copper, but this may damage the resist or cause changes in device characteristics due to high energy ion irradiation. On the other hand, attempts are also being made to reduce the grain size.
When nitrogen is introduced and added during sputtering, the brain size becomes approximately 0.5 μm, which can be made somewhat smaller than the conventional method. However, there is a strong possibility that the nitrogen may be mixed into the film, and this cannot be essentially improved. Further, the growth of aluminum film 17 by thermal CVD is introduced in the following literature. (1) rLPCVD ALUMINUM F
ORVLSI PROCESSINGJR,A,Le
vy and M, L, GreenJ, EIec.
Trochem, Soc, 134 (1987) P37
c(2) r LPC\' of Alumi
num and Al-5i A11o>5fo
r Sem1conduct, or Metaliz
ationJM,j, Cooke R,A,)le
inecke R, C, 5ternSolid S
t,ate TechnologyDecember1
982 PO2-G5 The thermal CVD methods shown in the above documents (1) and (2) are both similar hot wall CVD methods.
using the device. That is, the substrates are arranged in a reaction chamber made of a quartz glass tube, and a process gas for heating the substrates in a furnace is flowed from outside the quartz glass tube in the axial direction of the quartz glass tube. When an aluminum film is fabricated using this method, the step coverage is improved, but because the surface of the fabricated film is rough (resilience rate of about 10-20%), the bonding between the branes is poor and electromigration and stress migration problems occur. will occur. Furthermore, cluster ion beam evaporation and magnetron plasma CVD, which are introduced in the following literature, are methods that can produce aluminum films with good surface flatness.
The law is known. That is, (3) A1 film formation and crystallinity control by rICB method,” Yamada, Takagi Monthly Sem1conductor World (Japanese version) March issue (1987) P75 The method shown in this document uses a crucible containing aluminum. Clusters are generated in a high vacuum by heating, the resulting cluster beam is ionized by electron impact, and the ion cluster beam is irradiated onto the substrate to form a film. However, as shown in the cross-sectional view of FIG. 6, the aluminum film produced by this method cannot be used for wiring of electronic devices because there is a risk of wire breakage due to poor coverage of the stepped portion 21. . (4) Formation of At film by rMPcVD” Heating, Ito Monthly Sem1conductor World, (Japanese edition) March issue (19B?) P84 The method shown in this document is to attach an N pole to the back of the substrate holder at ground potential, The S-pole magnet is rotated and grounded, and high-frequency power is applied to the gas blowing part opposite the substrate.5, magnetron plasma CVD is performed.
It was designed to do this. According to this method, carbon is mixed in the aluminum film formed on the order of several percent, and the resistivity is 4 to 10.
It is large as μΩ・(A). For this reason, the low specific resistance (2.7μΩ・Crn
) cannot be used effectively and is not suitable as a wiring material. (Objective of the present invention) An object of the present invention is to reduce electromigration and stress migration by using an aluminum film, etc., which has few branes, good surface flatness, and excellent step coverage as a wiring material for electronic devices. and to provide a stable electronic device by preventing the occurrence of hillocks. (Means for Solving the Problems) In order to achieve the above object, the present invention is configured as follows. That is, in an electronic device having a wiring material made of an aluminum film or an aluminum alloy film,
The aluminum film or aluminum alloy film is supplied to the substrate surface after heating a predetermined gas to cause a first-stage thermal change, and a second-stage thermal change on the heated substrate surface causes the substrate surface to change. Thermal CV to perform film formation
It is characterized by being a film produced by method D. (Example) Fig. 1 shows the state of an aluminum film etc. produced as a wiring material for an electronic device according to the present invention, and Fig. 2 is a cross-sectional view showing step coverage of the aluminum film etc. Furthermore, FIG. 3 shows a front cross-sectional view of a thermal CVD apparatus used for producing an aluminum film and the like. The structure of the electronic device according to this embodiment is shown in FIG. 4; the explanation thereof will be omitted since it is the same as that of the conventional device shown in FIG. As shown in FIG. 1, an aluminum film etc. 17 with good flatness is fabricated on the silicon substrate 11. In order to fabricate this aluminum film etc. 17, vA shown in FIG.
Use CVD equipment. Reference numeral 1 denotes a processing chamber, which has a structure that can be kept airtight. 3 is installed here in the processing chamber 1, and the substrate 11 is 1
This is a substrate holder that holds the substrate 11 and adjusts the temperature of the substrate 11. To explain the configuration of the temperature adjustment mechanism 20 that adjusts the temperature of the substrate holder 3, 4 is a heater that heats the gas holder 3 by resistance heating (this may also be done by a heating method such as radiation heating), A thermocouple 5 monitors the temperature of the substrate holder 3. A temperature measuring resistor may be used instead of the thermocouple 5 as a temperature monitor. The old model measured with thermocouple 5 is PID control (not shown), PI
The power is input to a control circuit such as a sub-control ON-OFF control, and the input power to the heater 40 is adjusted using a thyristor or relay to adjust the temperature of the substrate holder 3. When necessary, the substrate holder 3 can be cooled and the temperature can be adjusted by both heating and cooling methods. A predetermined amount of gas 108 is introduced into the processing chamber 1 through a valve 7 from a gas supply device (not shown). Distribution plate 31 with gas passage/blowout pores
is provided. This distribution plate 31 has a temperature adjustment mechanism 4.
Incorporates 0. The temperature adjustment mechanism 40 mainly includes a heating means 41 provided on the distribution plate 31, a temperature monitor 42, and a feedback control means (not shown).
1, the distribution plate 31 is heated from the atmospheric pressure side by resistance heating using a heater 32. The same effect can be obtained even if radiation heating is performed using a halogen lamp or the like instead of resistance heating. Heater 32 is insulated from distribution plate 31 using insulating powder 34 . The insulating powder 34 may be alumina or the like, but in consideration of the conductivity of heat from the heater, it is better to use magnesia powder. Although the feedback control means is not shown, one word obtained by measuring with the thermocouple 33 is controlled by PID control, PIfi
'Jial], ON -OF control i, [ll, etc.) control circuit ffff1 is fed back, and the input power of the heater 32 is adjusted using a sirisk or a relay, and the distribution plate 3
A configuration that controls the temperature of 1 is adopted. Note that 35 is a lid for fixing the insulating powder 34. In order to produce the aluminum film 17 as a wiring material using the apparatus having the above-mentioned configuration, it is performed under the following film-forming conditions, for example. The pressure inside the processing chamber 1 was set to 2 Torr, triisobutylaluminum was used as the introduced gas, argon (flow rate 50 to 200 sec) was used as the carrier gas, the gas cylinder was set at 50 to 90°C, and the distribution plate 31 was set at 230°C. Triisobutylaluminum is subjected to a "first stage thermal change" and then supplied to the surface of the substrate 11 which is heated to 350 to 400°C. This allows the board 1
A "second stage thermal change" occurs on the surface of the substrate 1, and the aluminum film 17 can be formed on the substrate 11 at a rate of 1 μm/min. The surface of the film 170 is extremely flat compared to the conventional examples (1) and (2) related to thermal CVD described above. That is, the surface reflectance of the films produced by Conventional Examples (1) and (2) is about 10 to 20%, and the film has a very uneven and rough surface when observed by SEM. On the other hand, the aluminum film etc. according to the present invention has a film thickness of 1
The surface reflectance is 95% or more for 220 to 800 ntn light in μtn. This has better flatness than the film produced by the conventional sputtering method. In addition, as shown in FIG. 1, 1. The aluminum film or the like 17 formed on the substrate 11 is different from a sputtered film in SEN observation, and can be obtained in such a way that the brane 20 shown in FIG. 5 cannot be observed. Furthermore, when fabricated under the above film formation conditions, Si (crystal orientation 1
It is possible to epitaxially grow AI (crystal orientation 111 plane) on a substrate (11 plane), and it is possible to obtain a RHEED leak pattern. Or Si (crystal orientation 100 plane)
At-9i (crystal orientation 100 plane) epitaxial growth is possible on a substrate. Furthermore, as shown in FIG. 2, compared to the case of FIG. 6 in which the film was formed by cluster ion beam evaporation, the coverage at the stepped portion 21 was much better, and there was no fear of wire breakage. Furthermore, by controlling the parameters of the specific resistance of the film using the above-mentioned apparatus, a specific resistance of 2.7 μΩ can be easily obtained even for a film thickness of 1 μm with good flatness. Further, the amount of carbon mixed in is also low, at about 20 ppm or less. This film was heated at 430°C for 4 hours in a N2 atmosphere.
Although annealing was performed for 0 minutes, no hillocks were observed. This is a very superior feature compared to films produced by sputtering. The aluminum film etc. produced by the above-mentioned apparatus has good flatness, little impurity contamination, and excellent step coverage and crystallinity, making it ideal as a wiring material for electronic devices. be. When manufacturing an electronic device, after forming an aluminum film as a wiring material for the device using the method described above,
This is etched and patterned, and on the film,
As in the case of ordinary aluminum material for wiring, about 200 tungsten silicon films 18 are deposited by CVD or sputtering. This is done in order to lower the surface reflection fS so that exposure and patterning will not become impossible due to the high reflectance of the aluminum film and the like. In addition, in the above embodiment, 1. Regarding semiconductor devices that use aluminum films etc. as wiring materials. Although explained, it is not necessarily limited to this.
It also broadly includes electronic devices such as optoelectronic devices. (Effect of the invention) According to the claim, the wiring of an electronic device has a predetermined thermal CV.
By using an aluminum film or the like produced by the D method, electromigration, stress migration, and hillocks will not occur in the device.

[Brief explanation of the drawing]

Figure 1 is a partial perspective view of an aluminum film etc. produced as a wiring material for an electronic device according to the present invention. Figure 2 is a thermal CVD
FIG. 3 is a cross-sectional view showing step coverage of an aluminum film etc. produced by the method, and FIG. 3 is a front sectional view of a CVD apparatus used for producing the aluminum film etc., and FIG. N-type silicon gate 1-
A structural diagram of the MOS, FIG. 5 is a partial perspective view of an aluminum film produced by sputtering, and FIG. 6 is a cross-sectional view showing step coverage of an aluminum film produced by cluster ion beam evaporation. 11...Substrate, 12...Silicon oxide film, 13...
・N゛, 17...φ aluminum film or aluminum-silicon alloy film. Patent applicant: Nichiden Anelva Co., Ltd. Patent attorney: Kenji Murakami

Claims (1)

[Claims] In an electronic device having a wiring material made of an aluminum film or an aluminum alloy film, the aluminum film or aluminum alloy film is supplied to the substrate surface after heating a predetermined gas to first cause a first stage thermal change; An electronic device characterized in that the film is produced by a thermal CVD method in which a film is formed on the surface of a heated substrate by a second stage thermal change on the surface of the substrate.