JPH01243530A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To optimize a contact resistance between a source-drain region and a metal wiring part and to stabilize a characteristic by a method wherein the damage caused during formation of the metal wiring part is restored by a treatment using a plasma of H2 at 400 deg.C or lower. CONSTITUTION:A wafer 3 whose metal wiring part has been formed is set on a lower-part electrode 2 inside a chamber 7 whose temperature has been controlled at 400 deg.C. The inside of the chamber 7 is evacuated through evacuation ports 6 to produce a vacuum; H2 gas, NH3 gas or the like is introduced from a gas introduction port 5. A high frequency 4 is applied to an upper-part electrode 1 or the lower-part electrode 2; a plasma of hydrogen is generated. The wafer 2 whose temperature has been controlled at 400 deg.C or lower is treated with a prescribed plasma of H2. By this setup, a contact resistance between a source-drain region and the metal wiring part can be optimized; a characteristic can be stabilized.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly to improvements in H2 ginter technology.

[Summary of the invention]

The present invention is a method for manufacturing a semiconductor device, in which damage caused during the formation of full-figure wiring can be significantly reduced at a relatively low temperature by performing H1 treatment in plasma after forming full-figure wiring. .

[Conventional technology]

Conventionally, H and sintering after the entire wiring has been formed has been carried out using an electric furnace at a temperature of about 450°C.

[Problem to be solved by the invention]

This 14. Sintering has two purposes: to obtain good contact between the source and drain regions of the transistor and the full wiring, and to recover from damage caused during the formation of the full wiring. For the recovery of
Conventional electric furnaces require a temperature of 450°C fX [f]. However, in order to achieve good contact between the source, drain/region and the entire wiring in the former case, a temperature of about 400°C is necessary for Δ, and conversely, if the temperature is raised to 450°C, the contact between the source, drain/region and the wiring in the entire wiring is Δ. A problem arises in that the contact resistance increases due to the precipitation of 81 at the contact portion. Semiconductor devices are getting smaller and smaller every year, and the diameter of the contact hole used to connect the source and drain regions to the entire wiring is also becoming smaller, and increased contact resistance due to Si precipitation has become a serious problem. It is becoming.

The present invention solves the problems of the conventional semiconductor device manufacturing method, and aims to provide a semiconductor device manufacturing method that can accommodate higher integration and has stable characteristics. There it is.

[Means to solve the problem]

In the method for manufacturing a semiconductor device of the present invention, after forming the entire diagram wiring,
It is characterized by H and plasma treatment at a temperature of 00°C or lower.

〔Example〕

FIG. 1 is a schematic diagram of a semiconductor device in an embodiment of the present invention.

The wafer 3 after complete wiring is placed in the chamber 7 at 400°C.
It is set on the lower electrode 2 whose temperature is controlled to 'C. Then, the inside of the chamber 7 is evacuated from the exhaust port 6, and H
, gas or NH, gas, etc. are introduced through the gas inlet 5, and a high frequency wave 4 is applied to the upper electrode 1 or the lower electrode 2 to generate hydrogen plasma. Process.

FIG. 2 shows recovery from damage during full wiring formation using the threshold voltage (V th ) of the N-type transistor as a parameter. As is clear from FIG. 2, the predetermined Vth (0,
7V) is obtained by plasma treatment at 400''C for 30 minutes (DH!).On the other hand, in the case of a conventional electric furnace, as shown in Fig. 3, the predetermined Vth (
0.7V) was not obtained and required treatment at 450°C for 30 minutes.

〔Effect of the invention〕

As described above, according to the present invention, damage recovery during the formation of full-figure wiring can be performed by H, plasma treatment at 400"C or less, so that the contact resistance between the source, drain/region and full-figure wiring can be reduced. Optimization is improved, and the yield of semiconductor devices and the stabilization and improvement of characteristics become f1 possible.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of a semiconductor device according to an embodiment of the present invention. FIG. 2 is a graph using the threshold voltage of an N-type transistor as a parameter for the time taken to recover from damage according to the present invention. Figure 3 is a graph using the threshold voltage of an N-type transistor as a parameter for the time it takes to recover from damage caused by a conventional electric furnace. ■... Upper electrode 2... Lower electrode 3... Wafer 4... High frequency 5... Gas inlet 6.
...Exhaust lower...Chamber and above Applicant: Seiko Epson Corporation A1 Port 1st color 3rd eye

Claims (1)

[Claims] 1. A method for manufacturing a semiconductor device, comprising the step of forming full wiring on the surface of a semiconductor substrate and then performing H_2 gintering in plasma at a low temperature of 400° C. or lower.