JPH01241884A - Multiple quantum well semiconductor laser - Google Patents
Multiple quantum well semiconductor laserInfo
- Publication number
- JPH01241884A JPH01241884A JP7002688A JP7002688A JPH01241884A JP H01241884 A JPH01241884 A JP H01241884A JP 7002688 A JP7002688 A JP 7002688A JP 7002688 A JP7002688 A JP 7002688A JP H01241884 A JPH01241884 A JP H01241884A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mqw
- semiconductor laser
- quantum well
- type inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- 239000012535 impurity Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical group [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 3
- 229910052785 arsenic Inorganic materials 0.000 claims 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 3
- 229910052733 gallium Inorganic materials 0.000 claims 3
- 229910052738 indium Inorganic materials 0.000 claims 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 8
- 239000007924 injection Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000000370 acceptor Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000005253 cladding Methods 0.000 description 10
- 239000011701 zinc Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- BLJHFCVPKWOHJX-UHFFFAOYSA-N ethylgallium Chemical compound CC[Ga] BLJHFCVPKWOHJX-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005639 quantum mechanical wave Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光通信に用いられる石英ガラスファイバーの低
損失波長領域１．３μｍ−１，６５μｍ （長波長帯）
の光源となる半導体レーザに関するものであり、詳しく
は低しきい超電流の多重量子井戸（以下ＭＱＷと記す）
レーザに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention applies to the low loss wavelength range of 1.3 μm to 1,65 μm (long wavelength band) of silica glass fiber used in optical communications.
This relates to a semiconductor laser that serves as a light source, and in detail, a low-threshold supercurrent multiple quantum well (hereinafter referred to as MQW).
It is related to lasers.
従来の技術
近年、活性層に工ｎＧａＡｓＰの材料を用いた長波長帯
の半導体レーザが実用化される様になってきた。この半
導体レーザは活性層の厚さが０．１μｍ〜０．２μｍと
厚く、この活性層をｎ型とｐ型のＩｎＰのクラッド層で
はさんだダブルへテロ（ＤＨ）構造となっている。光通
信用光源として利用する半導体レーザには、低しきい超
電流、良好な温度特性、動的単一モード化および高い信
頼性等が要求される。特に長波長帯レーザは砒化ガリウ
ム（ＧａＡｓ ）系の短波長帯レーザに比べて発振しき
い超電流の温度特性が悪く、温度特性の改善が最大の課
題となっている。BACKGROUND OF THE INVENTION In recent years, long-wavelength semiconductor lasers using nGaAsP materials for their active layers have come into practical use. This semiconductor laser has a thick active layer of 0.1 μm to 0.2 μm, and has a double hetero (DH) structure in which the active layer is sandwiched between n-type and p-type InP cladding layers. Semiconductor lasers used as light sources for optical communications are required to have low threshold supercurrent, good temperature characteristics, dynamic single mode, and high reliability. In particular, long-wavelength lasers have worse temperature characteristics of oscillation threshold supercurrent than short-wavelength lasers based on gallium arsenide (GaAs), and the greatest challenge is to improve the temperature characteristics.
３１、−７
この問題を解決する方法として、ＭＱＷレーザが注目さ
れている。電子や正孔をド・ブロイ波長と同程鶏（数百
へ）以下の幅のポテンシャル井戸（量子井戸）に閉じ込
めると、電子や正孔が量子力学的な波動としてのふる捷
いを示すため、量子化された離散的なエネルギー準位が
形成される。31,-7 MQW lasers are attracting attention as a method to solve this problem. When electrons and holes are confined in a potential well (quantum well) with a width equal to the de Broglie wavelength (up to several hundred) or less, the electrons and holes exhibit oscillation as quantum mechanical waves. , quantized discrete energy levels are formed.
その結果、状態密度関数は階段状となる。この量子井戸
を活性層とす半導体レーザを作成すると、高いエネルギ
ーを持った余分なキャリアの数が減少し、小さな注入電
流密度で発振するとともに、利得係数の温度変化が小さ
く、しきい値電流の温度安定性もよい。しかし、活性層
の厚さが極めて薄いために光の閉じ込め係数が減少し、
逆にしきい値が増大する。光閉じ込め係数を改善するた
めに、多数の量子井戸を隣接して並べたのがＭＱＷ構造
である。As a result, the state density function becomes step-like. When a semiconductor laser is created using this quantum well as an active layer, the number of extra carriers with high energy is reduced, and it oscillates with a small injection current density, the temperature change in the gain coefficient is small, and the threshold current is It also has good temperature stability. However, because the thickness of the active layer is extremely thin, the light confinement coefficient decreases.
Conversely, the threshold increases. The MQW structure has a large number of quantum wells arranged next to each other in order to improve the optical confinement coefficient.
長波長帯レーザではウェル層（井戸層）としてＩｎＧａ
ＡｓＰまたはＩｎＧａＡＳが、バリア層（障壁層）とし
て、ＩｎＰまだはウェル層よシも禁制帯幅（バンドギャ
ップ）が大きいＩｎＧａＡｓＰが用いられる。In a long wavelength band laser, InGa is used as a well layer.
AsP or InGaAS is used as a barrier layer (barrier layer), and InGaAsP has a larger forbidden band width (band gap) than that of a well layer.
一般に通常のＤＨレーザやＭＱＷレーザでは、活性層は
アンドープとなっている。Generally, in a normal DH laser or MQW laser, the active layer is undoped.
発明が解決しようとする課題
しかしながら、Ｇ ａ Ａ ｓ系短波長帯のＭＱＷレー
ザは極めて良好な特性が実現きれているにもかかわらず
、ＩｎＰ系の長波長帯ＭＱＷレーザでは、通常のＤＨレ
ーザに比べ温度特性は改善されているものの、低しきい
値化は達成されていない。これはクラッド層から注入を
れたキャリアが、多数のバリア層を超える必要があるた
め、注入効率が悪くなっていることが原因である。特に
電子に比べて正孔の有効質量は約１桁大きく、拡散しに
くいため、正孔の注入効率が悪い。Problems to be Solved by the Invention However, although GaAs-based short-wavelength band MQW lasers have achieved extremely good characteristics, InP-based long-wavelength band MQW lasers are inferior to ordinary DH lasers. Although the temperature characteristics have been improved in comparison, lower threshold values have not been achieved. This is because carriers injected from the cladding layer have to pass through multiple barrier layers, resulting in poor injection efficiency. In particular, the effective mass of a hole is about one order of magnitude larger than that of an electron, and it is difficult to diffuse, so the injection efficiency of holes is poor.
本発明は上記従来の問題点を解決するもので、低しきい
値電流の長波長帯半導体レーザを提供することを目ｎ勺
とする。The present invention is intended to solve the above-mentioned conventional problems, and its primary purpose is to provide a long wavelength band semiconductor laser with a low threshold current.
課題を解決するだめの手段
この目的を達成するために、本発明のＭＱＷレーザは、
バリア層となるＩｎＰ層捷たはＩｎＧａＡｓＰ層に亜鉛
（Ｚｎ）等のアクセプタ不純物をドーピン５７、−７
グするとともに、その濃度を結晶性が悪化しない程度に
高濃度にしたものである。Means for Solving the Problem In order to achieve this object, the MQW laser of the present invention:
The InP layer or InGaAsP layer serving as the barrier layer is doped with an acceptor impurity such as zinc (Zn), and the concentration is set to be high enough not to deteriorate the crystallinity.
作 用
この構造の半導体レーザでは、ＭＱＷのバリア層にドー
ピングされたアクセプタ不純物から価電子帯に熱的励起
した正孔が隣接したバンドギャップの小さいウェル層に
落ち込む。発光領域はウェル層であり、バリア層への高
濃度不純物ドーピングのため発光効率が低下することは
ない。寸だ発光波長に対してバリア層は透明であシ、不
純物の光吸収損失は小さい。さらにクラッド層からＭＱ
Ｗに注入される正孔の注入効率は悪くても、あらかじめ
正孔がウェル層に均一に存在するため、注入された電子
との再結合確率は高（、ＭＱＷレーザの低しきｂ値を達
成することができる。Function: In a semiconductor laser having this structure, holes thermally excited to the valence band from the acceptor impurity doped in the MQW barrier layer fall into the adjacent well layer having a small band gap. The light emitting region is a well layer, and the light emitting efficiency does not decrease because the barrier layer is doped with impurities at a high concentration. The barrier layer is transparent to light emission wavelengths, and light absorption loss due to impurities is small. Furthermore, MQ from the cladding layer
Even though the injection efficiency of holes injected into W is low, the holes are uniformly present in the well layer in advance, so the probability of recombination with injected electrons is high (achieving a low b value for MQW lasers). can do.
実施例
以下本発明の実施例について、図面を参照しながら説明
する。長波長帯のＭＱＷレーザの作成には、ヘテロ界面
の急峻性、膜厚の均一性および薄膜の制御性に優れた有
機金属気相成長法（ＭＯＣＶＤ６ ヘ一〕
法）を採用し、まだ、原料ガスとしてトリメチルインジ
ウム（ＴＭＩ）、）リエチルガリウム（ＴＥＧ）、アル
シン（ＡｓＨ３）およびホスフィン（ＰＨ３）を用い、
さらに、不純物としてセレン化水素（Ｈ２Ｓｅ）とジエ
チル亜鉛（ＤＥＺ）にょシそれぞれＳｅとＺｎをドーピ
ングしたつ第１図は本発明のＭＱＷレーザの断面構造を
示すもので、右上にそのＭＱＷ活性層の拡大図をＵ［せ
て示す。単一横モード化と電流を効率良く活性層へ導く
ため、埋込型構造となっている。EXAMPLES Hereinafter, examples of the present invention will be described with reference to the drawings. To create a long-wavelength MQW laser, we adopted the metal organic chemical vapor deposition method (MOCVD6 method), which has excellent hetero-interface steepness, uniform film thickness, and thin film controllability. Using trimethylindium (TMI), ethylgallium (TEG), arsine (AsH3) and phosphine (PH3) as gases,
Furthermore, hydrogen selenide (H2Se) and diethylzinc (DEZ) were doped as impurities with Se and Zn, respectively. The enlarged view is shown by U. The buried structure is used to achieve a single transverse mode and to efficiently guide current to the active layer.
まずｎ型ＩｎＰ基板（１００）面１上に、ｎ型ＩｎＰク
ラッド層２を成長したのち、ＭＱＷ活性層として、厚さ
２００人のＩｎＧａＡｓＰ ウｘ ル層３と厚き２０
０人のＩｎＰバリア層４を交互に成長し、さらにｐ型Ｉ
ｎＰクラッド層７の一部を薄く成長した。ウェル層３の
層数は６層でアンドープであシ、バリア層４にばＺｎを
ドーピングした。First, an n-type InP cladding layer 2 is grown on the (100) surface 1 of the n-type InP substrate, and then an InGaAsP layer 3 with a thickness of 200 nm and an InGaAsP layer 3 with a thickness of 200 nm are formed as an MQW active layer.
0 InP barrier layers 4 are grown alternately, and further p-type I
A part of the nP cladding layer 7 was grown thinly. The well layer 3 had six layers and was undoped, and the barrier layer 4 was doped with Zn.
次に上記ウェハのく０１１〉方向に８１０２膜のストラ
イプを形成し、これに覆われることのない部分を臭素メ
タノール溶液および塩酸、リン酸溶７７、−７
液でエツチングすることによシ、メサ状ストライプ形状
を作成した。なお、この処理で形成するＭＱＷ活性層の
幅は約２μｍに設定した。続いて２回目のＭＯＣＶＤ成
長により、ＭＱＷ活性層の両側に、ｐ型ＩｎＰ埋込層５
およびｎ型ＩｎＰ埋込層６を順次成長し電流ブロック層
とした。Next, stripes of the 8102 film are formed in the 011> direction of the wafer, and the areas not covered by the stripes are etched with a bromine methanol solution and a hydrochloric acid/phosphoric acid solution 77, -7 to form a mesa. A stripe shape was created. Note that the width of the MQW active layer formed by this process was set to about 2 μm. Subsequently, by second MOCVD growth, p-type InP buried layers 5 are formed on both sides of the MQW active layer.
and an n-type InP buried layer 6 were sequentially grown to form a current blocking layer.
さらに、上記ＳｉＯ２膜のストライプを除去した後、３
回目のＭＯＣＶＤ成長によってｐ型ＩｎＰクラッド層７
およびｐ型ＩｎＧａＡ８Ｐコンタクト層８を順次成長し
た。Furthermore, after removing the stripes of the SiO2 film, 3
The p-type InP cladding layer 7 is formed by the second MOCVD growth.
and p-type InGaA8P contact layer 8 were successively grown.
この様な構造のＭＱＷレーザにおける発振しきい値電流
のＩｎＰバリア層４中のＺｎ濃度依存性を第２図に示す
。なお、ｎ型ＩｎＰクラッド層２のＳｅ濃度は２Ｘ１０
Ｃ７ｎ 、ｐ型ＩｎＰクラッド層７のＺｎ濃度は
７ Ｘ １０１７０ｆｆ−５である。ＩｎＰバリア層４
のＺｎ濃度が１×１０１８（７）−３以下特に７Ｘ１０
１７１ ”のところではアンドープの場合と大差がなり
、Ｚｎドーピングの効果が見られなかった。寸だ、Ｚｎ
濃度が２．５ Ｘ １０１８Ｃ７１＋−５以上になると
、結晶性が悪化し、ヘテロ界面の劣化から逆にしきい値
電流が上昇した。また、ＩｎＰバリア層４にＳｅを１．
７Ｘｌ○１８Ｃ２ｎ−３ドーピングした場合は、発振し
きい値電流は５ｏ〜ｅｏｍＡと上昇し、ＭＱＷへの電子
の注入効率よシ正孔の注入効率が問題であることが判明
した。正孔の注入効率の改善にはＩｎＰバリア層４への
Ｚｎドーピングが効果的であり、その最適Ｚｎ濃度は１
×１０ ｃｍ から２．５ Ｘ １０１８１−３の範
囲である。Ｚｎ濃度をこの範囲に設定することにより、
低しきい値電流の長波長帯ＭＱＷレーザが作製できるこ
とが確認された。FIG. 2 shows the dependence of the oscillation threshold current on the Zn concentration in the InP barrier layer 4 in an MQW laser having such a structure. Note that the Se concentration of the n-type InP cladding layer 2 is 2×10
The Zn concentration of the C7n, p-type InP cladding layer 7 is 7×10170ff−5. InP barrier layer 4
Zn concentration of 1×1018(7)-3 or less, especially 7×10
At 171", there was a big difference from the undoped case, and no effect of Zn doping could be seen.
When the concentration exceeded 2.5×1018C71+-5, the crystallinity deteriorated and the threshold current increased due to the deterioration of the hetero interface. In addition, 1.0% of Se was added to the InP barrier layer 4.
In the case of 7Xl○18C2n-3 doping, the oscillation threshold current increased to 50 to eomA, and it was found that the hole injection efficiency was more important than the electron injection efficiency into the MQW. Zn doping to the InP barrier layer 4 is effective for improving the hole injection efficiency, and the optimum Zn concentration is 1.
x 10 cm to 2.5 x 10181-3. By setting the Zn concentration within this range,
It was confirmed that a long wavelength band MQW laser with a low threshold current can be fabricated.
なお、実施例では、ウェル層３は４元混晶のＩｎＧａＡ
ｓＰとしたが、３元混晶のＩｎＧａＡｓとしてもよく、
寸だバリア層４はＩｎＰとしたが、ウェル層よりも禁制
帯幅の大きいＩｎＧａＡｓＰとしてもよいととは言うま
でもない。In the embodiment, the well layer 3 is made of quaternary mixed crystal InGaA.
sP, but ternary mixed crystal InGaAs may also be used.
Although the barrier layer 4 is made of InP, it goes without saying that InGaAsP, which has a wider forbidden band width than the well layer, may also be used.
発明の効果
以上のように本発明は多重量子井戸（ＭＱＷ）のバリア
層に１．０Ｘ１０ ｃｍ から２．５×１Ｑ１８０
ｎ″′３の濃度範囲でアクセプタ不純物をドーピングし
だ９、−ノ
ものであって、この構造により、低しきい値電流の長波
長帯ＭＱＷ半導体レーザを実現することができる。Effects of the Invention As described above, the present invention provides a multi-quantum well (MQW) barrier layer with a thickness of 1.0×10 cm to 2.5×1Q180.
The acceptor impurity is doped in the concentration range of n'''3, and with this structure, a long wavelength band MQW semiconductor laser with a low threshold current can be realized.
第１図は本発明の一実施例におけるＭＱＷ半導体レーザ
の断面図、第２図はＭＱＷ半導体レーザのしきい値電流
とバリア層中のＺｎドーピング濃度の関係を示す図であ
る。
１・・・・・・ＩｎＰ基板、２・・・・・・ｎ型ＩｎＰ
クラッド層、３・・・・・ＭＱＷのウェル層、４・・・
・ＭＱＷのバリア層、５・・・・・・ｐ型ＩｎＰ埋込層
、６・・・・・・ｎ型ＩｎＰ埋込層、７・・・ ｐ型Ｉ
ｎＰクラッド層、８・・・・・・ｐ型ＪｎＧａＡｓＰコ
ンタクト層。FIG. 1 is a cross-sectional view of an MQW semiconductor laser according to an embodiment of the present invention, and FIG. 2 is a diagram showing the relationship between the threshold current of the MQW semiconductor laser and the Zn doping concentration in the barrier layer. 1... InP substrate, 2... n-type InP
Cladding layer, 3...MQW well layer, 4...
・MQW barrier layer, 5... p-type InP buried layer, 6... n-type InP buried layer, 7... p-type I
nP cladding layer, 8... p-type JnGaAsP contact layer.
Claims (3)
ＧａＡｓＰ）もしくは３元混晶インジウム、ガリウム、
砒素（ＩｎＧａＡｓ）を材料とするウェル層と、インジ
ウム燐（ＩｎＰ）もしくはウェル層の材料より禁制帯幅
の大きいインジウム、ガリウム、砒素、燐（ＩｎＧａＡ
ｓＰ）を材料とするバリア層とからなる多重量子井戸を
活性層に有し、上記バリア層にアクセプタ不純物がドー
ピングされていることを特徴とする多重量子井戸半導体
レーザ。(1) Quaternary mixed crystal indium, gallium, arsenic, phosphorus (In
GaAsP) or ternary mixed crystal indium, gallium,
A well layer made of arsenic (InGaAs) and a material made of indium phosphide (InP) or indium, gallium, arsenic, phosphorus (InGaA), which has a larger forbidden band than the material of the well layer.
1. A multiple quantum well semiconductor laser, characterized in that the active layer has a multiple quantum well including a barrier layer made of sP), and the barrier layer is doped with an acceptor impurity.
１０＾１＾８ｃｍ＾−＾３から２．５×１０＾１＾８ｃ
ｍ＾−＾３の範囲に選定されていることを特徴とする特
許請求の範囲第１項に記載の多重量子井戸半導体レーザ
。(2) Doping concentration of acceptor impurity is 1.0×
10^1^8cm^-^3 to 2.5x10^1^8c
The multi-quantum well semiconductor laser according to claim 1, wherein the laser diode is selected in the range of m^-^3.
徴とする特許請求の範囲第１項に記載の多重量子井戸半
導体レーザ。(3) The multi-quantum well semiconductor laser according to claim 1, wherein the acceptor impurity is zinc (Zn).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7002688A JPH01241884A (en) | 1988-03-24 | 1988-03-24 | Multiple quantum well semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7002688A JPH01241884A (en) | 1988-03-24 | 1988-03-24 | Multiple quantum well semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01241884A true JPH01241884A (en) | 1989-09-26 |
Family
ID=13419678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7002688A Pending JPH01241884A (en) | 1988-03-24 | 1988-03-24 | Multiple quantum well semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01241884A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01292874A (en) * | 1988-05-20 | 1989-11-27 | Hitachi Ltd | Semiconductor laser element |
-
1988
- 1988-03-24 JP JP7002688A patent/JPH01241884A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01292874A (en) * | 1988-05-20 | 1989-11-27 | Hitachi Ltd | Semiconductor laser element |
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