JPH01238590A - Production organosilicon compound - Google Patents
Production organosilicon compoundInfo
- Publication number
- JPH01238590A JPH01238590A JP62088871A JP8887187A JPH01238590A JP H01238590 A JPH01238590 A JP H01238590A JP 62088871 A JP62088871 A JP 62088871A JP 8887187 A JP8887187 A JP 8887187A JP H01238590 A JPH01238590 A JP H01238590A
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- compound
- catalyst
- bond
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 150000003961 organosilicon compounds Chemical class 0.000 title claims description 8
- 239000003054 catalyst Substances 0.000 claims abstract description 24
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 11
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims abstract description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 6
- -1 ethylene, propylene, butene Chemical class 0.000 claims abstract description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims abstract description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims abstract description 3
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 3
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 claims abstract 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract 4
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical compound CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 claims abstract 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims abstract 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910017052 cobalt Inorganic materials 0.000 claims abstract 2
- 239000010941 cobalt Substances 0.000 claims abstract 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052742 iron Inorganic materials 0.000 claims abstract 2
- 229910052759 nickel Inorganic materials 0.000 claims abstract 2
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical compound CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052703 rhodium Inorganic materials 0.000 claims abstract 2
- 239000010948 rhodium Substances 0.000 claims abstract 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 22
- 150000001343 alkyl silanes Chemical class 0.000 claims description 5
- 238000006459 hydrosilylation reaction Methods 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 6
- 150000002739 metals Chemical class 0.000 abstract description 4
- 239000006087 Silane Coupling Agent Substances 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 230000003197 catalytic effect Effects 0.000 abstract description 2
- 239000000470 constituent Substances 0.000 abstract 1
- 229910000765 intermetallic Inorganic materials 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 21
- 239000002994 raw material Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 9
- 150000001336 alkenes Chemical class 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000012071 phase Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000001345 alkine derivatives Chemical class 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000008282 halocarbons Chemical class 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 238000007259 addition reaction Methods 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011949 solid catalyst Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- HASWNCHYBAFUSB-PMACEKPBSA-N (3s,6s)-3,6-bis[(5-hydroxy-1h-indol-3-yl)methyl]piperazine-2,5-dione Chemical compound C1=C(O)C=C2C(C[C@H]3C(=O)N[C@H](C(N3)=O)CC3=CNC4=CC=C(C=C43)O)=CNC2=C1 HASWNCHYBAFUSB-PMACEKPBSA-N 0.000 description 1
- 125000004973 1-butenyl group Chemical group C(=CCC)* 0.000 description 1
- 125000004974 2-butenyl group Chemical group C(C=CC)* 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- 239000007818 Grignard reagent Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910021638 Iridium(III) chloride Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910020828 NaAlH4 Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- NBWIIOQJUKRLKW-UHFFFAOYSA-N chloro(phenyl)silane Chemical class Cl[SiH2]C1=CC=CC=C1 NBWIIOQJUKRLKW-UHFFFAOYSA-N 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 108010087681 cyclo(5-hydroxytryptophyl-5-hydroxytryptophyl) Proteins 0.000 description 1
- 238000006298 dechlorination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 150000004795 grignard reagents Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- SIAPCJWMELPYOE-UHFFFAOYSA-N lithium hydride Chemical compound [LiH] SIAPCJWMELPYOE-UHFFFAOYSA-N 0.000 description 1
- 229910000103 lithium hydride Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229940050176 methyl chloride Drugs 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- DANYXEHCMQHDNX-UHFFFAOYSA-K trichloroiridium Chemical compound Cl[Ir](Cl)Cl DANYXEHCMQHDNX-UHFFFAOYSA-K 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/52—Improvements relating to the production of bulk chemicals using catalysts, e.g. selective catalysts
Landscapes
- Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
- Catalysts (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、SiH,と、アルケンあるいはアルキン化合
物とを触媒の存在下においてヒドロシリル化反応(付加
反応)させ、アルキルシラン類あるいはアルケニルシラ
ン類を製造する方法に関する。[Detailed Description of the Invention] [Technical Field] The present invention relates to a method for producing alkylsilanes or alkenylsilanes by subjecting SiH and an alkene or alkyne compound to a hydrosilylation reaction (addition reaction) in the presence of a catalyst. Regarding.
有機ケイ素化合物とは、一般に5t−C結合を有する化
合物の総称であり、現在シリコーン(ポリオルガノシロ
キサン)に代表されるように、有機ケイ素化学工業の発
展はすさまじい、有機ケイ素化金物の製造法はいくつか
知られ、代表的なものとして以下の方法があげられる。Organosilicon compounds are generally a general term for compounds having a 5t-C bond, and the organosilicon chemical industry is currently undergoing rapid development, as typified by silicone (polyorganosiloxane), and methods for producing organosiliconized metals are rapidly changing. There are several known methods, and the following methods are representative.
(1) Si+RCJ! → RzSiCh 、R
zSiCl、 R31CI3、Si[(、l。(1) Si+RCJ! → RzSiCh, R
zSiCl, R31CI3, Si[(,l.
(2) nRMgX +5iC14→R11SiCI
4−、 +nMgXC1(3) Na+RC1+Ei
Si−CI −+ 5t−R+ NaCI(4) C
HzSiHClz + RCH=CHz→R−CHzC
HtSi(CHs)Ch(5)○+)Is iC13−
σ5iCI、+H。(2) nRMgX +5iC14→R11SiCI
4-, +nMgXC1(3) Na+RC1+Ei
Si-CI −+ 5t-R+ NaCI(4) C
HzSiHClz + RCH=CHz→R-CHzC
HtSi(CHs)Ch(5)○+)Is iC13-
σ5iCI, +H.
(6) 〈区E>−CI + CHコ31)IC1z
→CHツ (<E>)st C1宜 十HCI(1
)は、Rocho−の直接法で、金属ケイ素とハロゲン
化炭化水素とから直接有機ケイ素化合物を製造するもの
で、現在の有機ケイ素工業において最も重要な基幹原料
であるアルキルクロロシランを製造する方法である。ハ
ロゲン化炭化水素RC2としては、メチルクロライドや
クロルベンゼンが工業化されていて、これ以外のハロゲ
ン化炭化水素は収率も低(工業的ではない。(6) <Ward E>-CI + CH ko31) IC1z
→CH Tsu (<E>) st C1 1 1 HCI (1
) is Rocho's direct method, which directly produces organosilicon compounds from metallic silicon and halogenated hydrocarbons, and is a method for producing alkylchlorosilanes, which are the most important basic raw materials in the current organosilicon industry. . As the halogenated hydrocarbon RC2, methyl chloride and chlorobenzene have been industrialized, and other halogenated hydrocarbons have low yields (not industrial).
一方、(2)はグリニヤール法、(3)は金属ナトリウ
ムによる脱塩素反応であり、任意のアルキル基を導入で
きるが、グリニヤール試薬、金属ナトリウムが高価で経
済的でない。On the other hand, (2) is a Grignard method, and (3) is a dechlorination reaction using metallic sodium, and although any alkyl group can be introduced, the Grignard reagent and metallic sodium are expensive and are not economical.
しかして、(4)は本発明に類似する方法であるが原料
はHSiChや直接法で副生するC15SiHC1□な
どに限定されると云う大きな問題点がある。Although (4) is a method similar to the present invention, there is a major problem in that the raw materials are limited to HSiCh and C15SiHC1□, which is a by-product of the direct method.
その他、(5)、(6)はいずれも高温反応で、原料も
O,0OCI 、CI!−CHC11H3ICh、や
(:HsSiHClを等のごく限られたものに限定され
る。In addition, (5) and (6) are both high-temperature reactions, and the raw materials are O,0OCI, CI! -CHC11H3ICh, and (:HsSiHCl).
以上述べたように現在の有機ケイ素工業の基礎原料はメ
チルあるいはフェニルクロロシラン類が大部分であり、
これらのケイ素化合物を出発原料に用いて、種々のシリ
コーン、シランカップリング剤、シリル化剤などの機能
性物質が開発されてきた。As mentioned above, the basic raw materials in the current organosilicon industry are mostly methyl or phenylchlorosilanes.
Using these silicon compounds as starting materials, various functional substances such as silicones, silane coupling agents, and silylating agents have been developed.
しかしながら、クロロシラン類を基礎原料とする従来の
有機ケイ素工業プロセスの問題点は、概して、■塩化水
素の発生を伴うなどクロル系であるためプロセス腐食が
大きいこと、■反応工程が多く複雑であること、■原料
的制約からメチル系が中心で、アルキル基の少なくとも
一個はメチル基を含むものであること、等である。However, the problems with conventional organosilicon industrial processes that use chlorosilanes as basic raw materials are: (1) high process corrosion due to the chlorine-based nature, including the generation of hydrogen chloride; (2) high complexity of reaction steps; , (2) Due to raw material constraints, methyl-based materials are mainly used, and at least one of the alkyl groups must contain a methyl group.
しかして、本発明は、かかる問題点を解決するためにな
されたもので、近年半導体産業の発展に伴い安価に工業
生産されるようになった5in4を出発物質とする経済
的で、機能性にすぐれた、有機ケイ素化合物原料の新し
い製造法を提供するものである。The present invention was made to solve these problems, and is an economical and highly functional product using 5in4 as a starting material, which has become industrially produced at low cost with the development of the semiconductor industry in recent years. This provides an excellent new method for producing organic silicon compound raw materials.
SiLとアルケンあるいはアルキンとのヒドロシリル化
反応(付加反応)により、アルキルシランやアルケニル
シランを合成する方法については、従来5iHaの入手
が困難で高価であったことからその研究例も少なかった
。わずかに、ツアイトシュリフト ヒエア ナチュール
フォルシェンク (Z。Regarding the method of synthesizing alkylsilanes and alkenylsilanes by hydrosilylation reaction (addition reaction) between SiL and alkenes or alkynes, there have been few research examples because 5iHa has been difficult to obtain and expensive. Slightly, Z.
Naturforsch、) 、56444(195
0);同、76.207(1952);ツァイトシュリ
フト フェア アノルガニッシェ ラント アルゲマイ
ネ ヘミ−(Z、Anorg。Naturforsch, ), 56444 (195
0); Ibid., 76.207 (1952); Zeitschrift Fair Anorganische Land Allgemeine Hemi (Z, Anorg.
Allgam、Chem、)273,275(1953
) ; ジャーナル オプ アメリカン ケミカル
ソサイアテイ(J、Am。Allgam, Chem, ) 273, 275 (1953
); Journal of American Chemical
Society (J, Am.
Chem、Soc、)76.3897(1954) ;
U、S、Pat、2786862(1957)等に報
告例が散見されるに過ぎない、これらの報告によれば、
反応温度が400乃至 500℃と高く、無触媒、熱分
解反応である。かつ収率も低く、生成するシラン化合物
の選択性のコントロールも不十分であった。Chem, Soc, ) 76.3897 (1954);
According to these reports, there are only a few cases reported in U.S. Pat, 2786862 (1957), etc.
The reaction temperature is as high as 400 to 500°C, and it is a non-catalytic thermal decomposition reaction. In addition, the yield was low, and the selectivity of the silane compound produced was insufficiently controlled.
本発明は、有機ケイ素工業用原料としてSignに着目
、5iHaから有機ケイ素化合物を合成する工業的ルー
トの開発に鋭意努力し、本発明に達することができたの
である。The present invention focused on Sign as an industrial organosilicon raw material, and made earnest efforts to develop an industrial route for synthesizing organosilicon compounds from 5iHa, and was able to arrive at the present invention.
すなわち本発明は、5i)1.と、
分子内に少なくとも一個の、炭素と炭素の二重結合(C
−C)および/または炭素と炭素の三重結合(C; C
)を有する炭化水素化合物とを、周期律表における第1
族、第VIA族、第VIIA族の金属からなる触媒ある
いは該金属の化合物を触媒構成成分に含む触媒の存在下
に、0℃乃至400℃の温度範囲でヒドロシリル化反応
させることを特徴とするケイ素−炭素結合(Si−C)
を有する有機ケイ素化合物の製造方法であり、さらに云
えば、
有機ケイ素化合物が一般式JSiH4−a(ただしRは
炭化水素基でnは1,2.3あるいは4を表す)で表さ
れるアルキルシラン類あるいはアルケニルシラン類であ
る製造方法である。That is, the present invention provides 5i)1. and at least one carbon-carbon double bond (C
-C) and/or carbon-carbon triple bond (C; C
) is the first hydrocarbon compound in the periodic table.
Silicon, characterized by carrying out a hydrosilylation reaction in the temperature range of 0 ° C. to 400 ° C. in the presence of a catalyst consisting of a metal of Group VIA, Group VIIA, or a catalyst containing a compound of the metal as a catalyst component. -Carbon bond (Si-C)
More specifically, the organosilicon compound is an alkylsilane represented by the general formula JSiH4-a (where R is a hydrocarbon group and n is 1, 2.3 or 4). This is a method for producing alkenylsilanes or alkenylsilanes.
以下、本発明の詳細な説明する。 The present invention will be explained in detail below.
本発明において原料として用いられるSiH4は、近年
の半導体産業の著しい発展に伴い、半導体用ガスとして
大量生産され、最近、工業的に安価に入手できるように
なったものである。SiH4の製造方法としては、例え
ば、ケイ素のマグネシウム合金(MgzSi等)をハロ
ゲン化水素酸の水溶液と反応させる方法、四塩化ケイ素
を水素化リチウム等の還元剤で還元する方法、トリクロ
ロシランの不均化反応による方法等が公知であるが、例
えば、本発明においては、この何れの方法で生産された
ものも好適に使用することが可能である。SiH4 used as a raw material in the present invention has been mass-produced as a semiconductor gas due to the remarkable development of the semiconductor industry in recent years, and has recently become available industrially at low cost. Methods for producing SiH4 include, for example, a method in which a magnesium alloy of silicon (MgzSi, etc.) is reacted with an aqueous solution of hydrohalic acid, a method in which silicon tetrachloride is reduced with a reducing agent such as lithium hydride, and a method in which asymmetric trichlorosilane is used. Methods such as chemical reactions are well known, and for example, in the present invention, products produced by any of these methods can be suitably used.
もうひとつの原料は分子内に少なくとも一個の、炭素と
炭素の二重結合(C−C)および/または炭素と炭素の
三重結合 (CIC)を有する化合物、すなわちアルケ
ンあるいはアルキンであって、等の官能基を有すること
もできる。具体例としては、
CHt−CHt 、 CHz−CH−CHs、 C
Hz−CI−CJs −CHz−C(CHi) z、C
Hg=CH−CH−CHz 、CHz−CH−CsHt
、CHg=CH−C4H9、CHz−C)l−CsH+
+、 CL =C冨CHz、CHz−CH−CHz−C
H−CH−CHs、CI(二〇)l、 CH二C−CH
,、CHzIICHCISCL−CH−CHzCl
−CTo−CH−CHz−NHz、CHz=CHCHt
NHCONHz、 CHz−CHCHJCO,0CI(
−CTo、HtC−IC−ecH=cHt、 0−C(
CHz)=CHzCHI−C−Cア0co、、へDCH
ICI、CH,翼CHecH寞C1、、CHx−CH−
CHt訃@CH*−CI =CH(J ICHz CH
J Hz 、および
などがあげられる、勿論これらは2種類以上同時に用い
ることもできる。Another raw material is a compound having at least one carbon-to-carbon double bond (C-C) and/or carbon-to-carbon triple bond (CIC) in its molecule, such as an alkene or an alkyne. It can also have a functional group. Specific examples include CHt-CHt, CHz-CH-CHs, C
Hz-CI-CJs -CHz-C(CHi) z,C
Hg=CH-CH-CHz, CHz-CH-CsHt
, CHg=CH-C4H9, CHz-C)l-CsH+
+, CL = C max CHz, CHz-CH-CHz-C
H-CH-CHs, CI(20)l, CH2C-CH
,,CHzIICHCISCL-CH-CHzCl
-CTo-CH-CHz-NHz, CHz=CHCHt
NHCONHz, CHz-CHCHJCO,0CI(
-CTo, HtC-IC-ecH=cHt, 0-C(
CHz)=CHzCHI-C-Ca0co,,DCH
ICI, CH, Wing CHecH寞C1,, CHx-CH-
CHt訃@CH*-CI =CH(J ICHz CH
J Hz, and the like. Of course, two or more types of these can be used at the same time.
次に本発明において用いられる触媒とは、周期律表(新
実験化学講座、丸善株式会社発行(1977))におけ
る第1族、第VIA族、第VIIA族の金属からなる触
媒あるいは該金属の化合物を触媒構成成分に含む触媒で
あり、例えば、具体的には、Fe、CO5Ni、 Ru
5Rh、 Pd、 Os、 Ir%Pt、 Cr、 M
o、−1Mn、 Tc、 Re などの金属;、Fe
(Go) s、Cot(CO)s、LJi(オレフィ
ン)、
LtNiClt 、 RIIClx 、L*RhCl、
La1d、 LzPdClz 。Next, the catalyst used in the present invention is a catalyst consisting of a metal of Group 1, Group VIA, or Group VIIA in the Periodic Table (New Experimental Chemistry Course, published by Maruzen Co., Ltd. (1977)) or a compound of the metal. It is a catalyst containing as a catalyst component, for example, specifically, Fe, CO5Ni, Ru
5Rh, Pd, Os, Ir%Pt, Cr, M
o, -1 Metals such as Mn, Tc, Re;, Fe
(Go)s, Cot(CO)s, LJi (olefin), LtNiClt, RIIClx, L*RhCl,
La1d, LzPdClz.
IrCl3 、L4Pt、 ((オレフィン)PtC
h)z、HiPtCli ・6HtO1R4(Co)z
、RuC1t(Pφ、)1、Cr(Co)i 、Mn
t(Go)to 、 (ただしφはフェニル、LはPR
h3あるいはPH1)などの金属錯体; Pt/C。IrCl3, L4Pt, ((olefin)PtC
h)z, HiPtCli ・6HtO1R4(Co)z
, RuC1t(Pφ,)1, Cr(Co)i, Mn
t(Go)to, (where φ is phenyl and L is PR
metal complexes such as h3 or PH1); Pt/C.
Pd/Cなどの活性炭に担持させた金属などがあげられ
る。触媒は均−系又は不均一系のものであり、これらは
大部分は市販されていて容易に入手可能である。また勿
論、容易に合成することも出来る。本発明は上述の金属
あるいはその化合物を触媒の必須成分とするもので、こ
れ以外の触媒成分を同時に含むことは勿論可能である。Examples include metals supported on activated carbon such as Pd/C. Catalysts can be homogeneous or heterogeneous, and most of them are commercially available and readily available. Of course, it can also be easily synthesized. In the present invention, the above-mentioned metal or its compound is an essential component of the catalyst, and it is of course possible to include other catalyst components at the same time.
本発明は、5i14と上述の炭化水素とを上記の如き触
媒の存在下に0℃乃至400″Cで反応させるものであ
る。In the present invention, 5i14 and the above-mentioned hydrocarbon are reacted at 0°C to 400''C in the presence of the above-mentioned catalyst.
該反応は、上記の反応温度と触媒を使用することを除く
と特に制限はなく、気相、液相のいずれでも行い得る。The reaction is not particularly limited except for the use of the above-mentioned reaction temperature and catalyst, and can be carried out in either a gas phase or a liquid phase.
反応温度はO′C乃至400℃で、好ましくは50℃乃
至200’Cの範囲であり、触媒は均一、不均一のいず
れでも良い。The reaction temperature ranges from O'C to 400C, preferably from 50C to 200C, and the catalyst may be either homogeneous or heterogeneous.
反応方法の具体例をあげると、例えば気相で行う場合に
は、5iHaとガス状アルケン、アルキン等の炭化水素
化合物を固体触媒表面に導入し反応させる方法、液相で
行う場合には、触媒を含む液状の炭化水素化合物にSi
H4を吹き込むなどの方法が採用でき、後者の場合には
、ベンゼン、ヘプタン、ヘキサン、トルエンなどのSi
H4あるいはアルケン、アルキン化合物と反応しない有
機化合物を溶媒に用いることができる。反応圧には特に
制限はないが、平衡上高圧であることが望ましく、また
水素、アルゴン、窒素、ヘリウムなどのガス共存下で行
うこともできる。To give specific examples of reaction methods, for example, when carried out in a gas phase, 5iHa and a hydrocarbon compound such as a gaseous alkene or alkyne are introduced onto the surface of a solid catalyst and reacted, and when carried out in a liquid phase, a method is used in which 5iHa and a hydrocarbon compound such as a gaseous alkene or alkyne are introduced onto the surface of a solid catalyst. Si in a liquid hydrocarbon compound containing
Methods such as blowing H4 can be adopted, and in the latter case, Si such as benzene, heptane, hexane, toluene, etc.
An organic compound that does not react with H4 or an alkene or alkyne compound can be used as a solvent. Although there is no particular restriction on the reaction pressure, a high pressure is desirable for equilibrium purposes, and the reaction can also be carried out in the coexistence of a gas such as hydrogen, argon, nitrogen, or helium.
本発明における反応式は、例えば一般に下式のように示
される。The reaction formula in the present invention is generally shown, for example, as shown in the following formula.
SiH4+nC)12−CH−R−+ (R−CHz
−CHx)n SiHn−aSig4+ ncH1=C
−R−’ (R−CHz−CHz)n 5iHa−n
nは反応温度、反応圧、反応時間、触媒の種類、5iH
nと炭化水素との仕込みモル比などの反応条件によって
任意にコントロールすることができる。SiH4+nC)12-CH-R-+ (R-CHz
-CHx)n SiHn-aSig4+ ncH1=C
-R-' (R-CHz-CHz)n 5iHa-n
n is reaction temperature, reaction pressure, reaction time, type of catalyst, 5iH
It can be arbitrarily controlled by reaction conditions such as the molar ratio of n and hydrocarbon.
反応温度は上記したごとくO″C乃至400℃5反応圧
力反応の平衡上、高圧であることが望ましいが、通常0
乃至1000気圧、好ましくは0乃至100気圧である
。また仕込モル比は目的とする生成物の種類により、任
意に変更することが可能であり、特に臨界的に制限する
ものではないが、通常、(不飽和炭化水素/5iHa
)・0.01乃至100気圧の範囲である。また反応時
間は、数分乃至数十時間δ範囲で任意に選択することが
可能である。As mentioned above, the reaction temperature ranges from 0''C to 400℃.5Reaction pressureIn view of the equilibrium of the reaction, high pressure is desirable, but it is usually 0.
The pressure is from 1000 atmospheres to 1000 atmospheres, preferably from 0 to 100 atmospheres. In addition, the charging molar ratio can be arbitrarily changed depending on the type of target product, and is not particularly critical, but it is usually (unsaturated hydrocarbon/5iHa
)・The range is from 0.01 to 100 atmospheres. Further, the reaction time can be arbitrarily selected within the range δ from several minutes to several tens of hours.
以上のごとくして得られたアルキルシランやアルケニル
シランは反応性に冨む5t−H結合を含有しており、こ
の反応性を利用することで、シリコーン、シランカップ
リング剤、シリル化剤、ポリマー用モノマーなどとして
の用途が期待でき、機能性材料の開発に大きく貢献でき
る新規な有機ケイ素化合物である。The alkylsilanes and alkenylsilanes obtained as described above contain highly reactive 5t-H bonds, and by utilizing this reactivity, silicones, silane coupling agents, silylating agents, polymers, etc. It is a novel organosilicon compound that can be expected to be used as a functional monomer and can greatly contribute to the development of functional materials.
これらの化合物は、従来、アルキルクロロシラン類をL
iAIH,、NaAlH4、NaBHnなどの高価な還
元剤で還元することで得る以外に方法は無く、従って、
極めて高価なものとなっていたため、その用途開発は殆
どされていなかった6本発明はかかる欠点を根本的に解
決したもので、機能性モノマーを安価に生産する新規な
方法を提供するものである。Conventionally, these compounds have been prepared by converting alkylchlorosilanes into L
There is no other way than to obtain it by reducing it with an expensive reducing agent such as iAIH, NaAlH4, NaBHn, etc., and therefore,
Because it was extremely expensive, there was almost no development of its uses.6 The present invention fundamentally solves these drawbacks and provides a new method for producing functional monomers at low cost. .
以下、本発明を実施例によって説明する。Hereinafter, the present invention will be explained by examples.
叉施■上
21、のオートクレーブに、34Haを40susol
、アセチレンを180mmol、触媒として活性炭に
ptを0.5wtχ担持させたものを1.6g仕込み、
撹拌しながら反応温度100℃で6時間反応させた。反
応終了後、揮発性化合物は気相成分をそのまま、非揮発
成分はトルエン溶液としてガスクロマトグラフで分析し
た。Add 40 susol of 34 Ha to the autoclave of 21.
, 180 mmol of acetylene and 1.6 g of 0.5 wt χ of PT supported on activated carbon as a catalyst were charged.
The reaction was carried out for 6 hours at a reaction temperature of 100° C. while stirring. After the reaction was completed, volatile compounds were analyzed as gas phase components as they were, and non-volatile components were analyzed as a toluene solution using gas chromatography.
生成物はC0−CH−5iHs 13.2nol(S
iベースでの収率33z)、(CHz−CH)g Si
n< 9.2m1nol (23χ)、H*5i−C
Hz−CHz−3iHs 0.8mmol(4χ)、
およびその他微量の生成物が認められた。The product is C0-CH-5iHs 13.2nol (S
i based yield 33z), (CHz-CH)g Si
n< 9.2m1nol (23χ), H*5i-C
Hz-CHz-3iHs 0.8 mmol (4χ),
and trace amounts of other products were observed.
叉施五主
500m1のオートクレーブにプロピレン100100
O!、ヘプタン20kl 、触媒として(Pφs) J
hClを0.5g仕込んだ後、温度を80℃とし、これ
にSiHa120mmolを8時間かけて装入した6反
応終了後、気相および液相成分の分析をガスクロマトグ
ラフで行った。Propylene 100100 in a 500m1 autoclave
O! , heptane 20kl, as catalyst (Pφs) J
After charging 0.5 g of hCl, the temperature was raised to 80° C., and 120 mmol of SiHa was charged over 8 hours. After completion of six reactions, gas phase and liquid phase components were analyzed using a gas chromatograph.
生成物はCHsCH2SiHs 16.8mmol(
Siベースでの収率14χ)、(CHsCHzCHz)
t 5iHa 40.8mmol (34χ) (
C1hCHtCIbh 5iH414,4mmol (
12χ)およびその他@量の生成物が認められた。The product is CHsCH2SiHs 16.8 mmol (
Yield on Si basis 14χ), (CHsCHzCHz)
t 5iHa 40.8 mmol (34χ) (
C1hCHtCIbh 5iH414,4mmol (
12χ) and other quantities of products were observed.
ス1lIL
500鋼lのオートクレーブに、1.3−フ゛タジェン
を850mmol 、キシレンを200m1. 触媒
としてRuC1z(Pφ、)、を0.5g仕込んだ後、
温度を105℃とし、これに5iHa 90a+mol
を6時間かけて装入した0反応終了後、気相および液相
成分の分析をガスクロマトグラフで行った。In a 500 ml autoclave, add 850 mmol of 1,3-phytagene and 200 ml of xylene. After charging 0.5 g of RuC1z (Pφ, ) as a catalyst,
The temperature was set to 105℃, and 5iHa 90a+mol
After the completion of the 0 reaction, which took 6 hours to charge, the gas phase and liquid phase components were analyzed using a gas chromatograph.
生成物はR’5iHz 10.8mmol(R’は1
−あるいは2−ブテニル基、Siベースでの収率12χ
)、R’zSiHz 27.Offimol(30χ)
、R’5SiH2,7mmol(3χ)およびその他
少量の高沸点の副生成分が認められた。The product is R'5iHz 10.8 mmol (R' is 1
- or 2-butenyl group, yield 12χ based on Si
), R'zSiHz 27. Offimol (30χ)
, R'5SiH2, 7 mmol (3χ) and other small amounts of high boiling point by-products were observed.
l五立肱果
本発明は、近年の反導体産業の発展に伴い大量生産され
、安価に入数できるようになったSiH4を出発原料に
用い、新たな有機ケイ素工業用原料として期待されるア
ルキルシラン類、あるいはアルケニルシラン類の経済的
で新規な合成ルートを提供するものである0本発明にか
かわるシラン類は、従来のアルキルクロロシラン系の基
礎原料に好適に代替え可能なものであり、5i−H結合
の高い反応性に起因して高機能性の付与が可能であり、
また非クロル系で腐食の心配がないなど多くの利点を有
する有機ケイ素工業プロセスの開発を実現させるもので
ある。The present invention uses SiH4, which has been mass-produced and can be obtained at low cost with the recent development of the anticonductor industry, as a starting material, and uses alkyl alkyl, which is expected to be a new industrial raw material for organosilicon. The silanes related to the present invention, which provide an economical and new synthetic route for silanes or alkenylsilanes, can be suitably substituted for conventional alkylchlorosilane-based basic raw materials, and are 5i- It is possible to impart high functionality due to the high reactivity of H bonds,
It also enables the development of an organic silicon industrial process that has many advantages such as being non-chlorine-based and free from corrosion.
Claims (5)
=C)および/または炭素と炭素の三重結合(C≡C)
を有する炭化水素化合物とを、周期律表における第VII
I族、第VIA族、第VIIA族の金属からなる触媒あるいは
該金属の化合物を触媒構成成分に含む触媒の存在下に、
0℃乃至400℃の温度範囲でヒドロシリル化反応させ
ることを特徴とするケイ素−炭素結合(Si−C)を有
する有機ケイ素化合物の製造方法。(1) SiH_4 and at least one carbon-carbon double bond (C
=C) and/or carbon-carbon triple bond (C≡C)
A hydrocarbon compound having a number VII in the periodic table
In the presence of a catalyst consisting of a metal of Group I, Group VIA, or Group VIIA, or a catalyst containing a compound of the metal as a catalyst component,
A method for producing an organosilicon compound having a silicon-carbon bond (Si-C), which comprises carrying out a hydrosilylation reaction in a temperature range of 0°C to 400°C.
_n(ただしRは炭化水素基でnは1、2、3あるいは
4を表す)で表されるアルキルシラン類あるいはアルケ
ニルシラン類である特許請求の範囲第1項記載の方法。(2) The organosilicon compound has the general formula R_nSiH_4_-
The method according to claim 1, which is an alkylsilane or an alkenylsilane represented by _n (where R is a hydrocarbon group and n represents 1, 2, 3 or 4).
ン、プロピレン、ブテン、イソブテン、ブタジエンある
いはスチレンである特許請求の範囲第1項記載の方法。(3) The method according to claim 1, wherein the compound having a carbon-carbon double bond is ethylene, propylene, butene, isobutene, butadiene, or styrene.
ンあるいはプロピンである特許請求の範囲第1項記載の
方法。(4) The method according to claim 1, wherein the compound having a carbon-carbon triple bond is acetylene or propyne.
ル、ルテニウあるいはロジウムもしくはその化合物であ
る特許請求の範囲第1項記載の方法。(5) The method according to claim 1, wherein the catalyst is platinum, palladium, iron, cobalt, nickel, ruthenium, rhodium, or a compound thereof.
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62088871A JPH0764855B2 (en) | 1987-04-13 | 1987-04-13 | Method for producing organosilicon compound |
PCT/JP1988/000065 WO1988005779A1 (en) | 1987-01-28 | 1988-01-28 | Processes for preparing organosilicon compounds and silicon carbide |
KR1019900702572A KR920001354B1 (en) | 1987-01-28 | 1988-01-28 | Process for preparing organosilicon compounds and silicon carbide |
KR1019900702573A KR910008295B1 (en) | 1987-01-28 | 1988-01-28 | Production of silicon carbide |
DE3855646T DE3855646T2 (en) | 1987-01-28 | 1988-01-28 | METHOD FOR PRODUCING ORGANIC SILICON COMPOUNDS AND SILICON CARBIDE |
EP88901299A EP0301099B1 (en) | 1987-01-28 | 1988-01-28 | Processes for preparing organosilicon compounds and silicon carbide |
KR1019880701187A KR910001078B1 (en) | 1987-01-28 | 1988-01-28 | Process for preparing organosilicon compounds and silicon carbide |
CA000559220A CA1340699C (en) | 1987-02-20 | 1988-02-18 | Preparation process of organosilicon compounds and production process of silicon carbide |
US08/383,712 US5596117A (en) | 1987-01-28 | 1995-02-03 | Preparation process of organo silicon compounds and production process of silicon |
US08/413,115 US5508363A (en) | 1987-01-28 | 1995-03-29 | Preparation process of organosilicon compounds and production of silicon carbide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62088871A JPH0764855B2 (en) | 1987-04-13 | 1987-04-13 | Method for producing organosilicon compound |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01238590A true JPH01238590A (en) | 1989-09-22 |
JPH0764855B2 JPH0764855B2 (en) | 1995-07-12 |
Family
ID=13955073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62088871A Expired - Lifetime JPH0764855B2 (en) | 1987-01-28 | 1987-04-13 | Method for producing organosilicon compound |
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Country | Link |
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JP (1) | JPH0764855B2 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5242873A (en) * | 1975-10-03 | 1977-04-04 | Agency Of Ind Science & Technol | Process for preparation of pyrpolidone containing silicon |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2537763A (en) | 1950-02-08 | 1951-01-09 | Gen Electric | Preparation of organosilanes |
-
1987
- 1987-04-13 JP JP62088871A patent/JPH0764855B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5242873A (en) * | 1975-10-03 | 1977-04-04 | Agency Of Ind Science & Technol | Process for preparation of pyrpolidone containing silicon |
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