JPH01235190A - Manufacture of electroluminescence element - Google Patents
Manufacture of electroluminescence elementInfo
- Publication number
- JPH01235190A JPH01235190A JP63059962A JP5996288A JPH01235190A JP H01235190 A JPH01235190 A JP H01235190A JP 63059962 A JP63059962 A JP 63059962A JP 5996288 A JP5996288 A JP 5996288A JP H01235190 A JPH01235190 A JP H01235190A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- temperature
- heating
- manufacturing
- temperature sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000005401 electroluminescence Methods 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 8
- 230000020169 heat generation Effects 0.000 abstract description 15
- 230000004044 response Effects 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000011521 glass Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 235000020004 porter Nutrition 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Bipolar Transistors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明はエレクトル・ルミネッセンス素子（以下、ＥＬ
素子とする）の製造方法の改善に関するものである。[Detailed Description of the Invention] [Industrial Field of Application]
This invention relates to an improvement in the manufacturing method of the device.
［従来の技術］
ＥＬ素子の製造工程では１発光層などの膜を形成すると
きは、基板を一定の温度範囲まで加熱しなければならな
い。[Prior Art] In the manufacturing process of an EL element, when forming a film such as a light emitting layer, a substrate must be heated to a certain temperature range.
従来、このようなＥＬ素子の加熱に用いる装置としては
、例えば第４図に示す構成のものがあった。Conventionally, as an apparatus used for heating such an EL element, there has been one having the configuration shown in FIG. 4, for example.
図で、１はＥＬ素子が形成される基板、２は内部に基板
１が支持される基板ポルター、３は基板ホルダー２内で
基板１の基板面に対向して配置されているタングステン
線等を用いたヒータ、４は基板１の側面に接触していて
基板の温度を検出する熱な対、５は熱電対４の検出温度
をもとにヒータ３の駆動を制御して基板１を目標加熱温
度にするコントローラ、６は基板１に形成する膜材料の
蒸気を発生する蒸着源である。In the figure, 1 is a substrate on which an EL element is formed, 2 is a substrate porter in which the substrate 1 is supported, and 3 is a tungsten wire, etc., which is placed in the substrate holder 2 facing the substrate surface of the substrate 1. The heater used, 4 is a thermal pair that is in contact with the side surface of the substrate 1 and detects the temperature of the substrate, and 5 is a heater that controls the drive of the heater 3 based on the temperature detected by the thermocouple 4 to heat the substrate 1 to a target temperature. A temperature controller 6 is a vapor deposition source that generates vapor of a film material to be formed on the substrate 1.
この装置では、コントローラ５により基板１が目標加熱
温度になったところで、蒸着源６から基板１に膜材料が
蒸着されてＥＬ素子を構成する膜が形成される。In this apparatus, when the substrate 1 reaches a target heating temperature by the controller 5, a film material is evaporated onto the substrate 1 from the evaporation source 6 to form a film constituting the EL element.
［発明が解決しようとする問題点］ しかし、この装置では次の問題点があった。[Problem that the invention attempts to solve] However, this device had the following problems.
■基板の温度検出手段として熱電対を使用しているため
、熱な対が基板に確実に接触しなかっなり、接触してい
ても基板面内の温度を正確にモニタできない。このため
、出来上がったＥＬ素子の発光中心濃度が均一にならず
、輝度むらを生じたり、また製造条件を同じにしても同
一特性のＦ、 Ｌ索子が得られない。■Since a thermocouple is used as a means for detecting the temperature of the board, the hot couple does not reliably contact the board, and even if it does, the temperature within the board surface cannot be accurately monitored. For this reason, the luminescent center concentration of the completed EL device is not uniform, resulting in uneven brightness, and even if the manufacturing conditions are the same, F and L cells with the same characteristics cannot be obtained.
■基板を加熱する手段として、発熱抵抗線を用いたし−
タを基板と別個に設けているなめ、装置が大がかりにな
る。また、基板とヒータは離れているため、基板の熱応
答が悪く、温度コントロールが難しくなる。■We used a heat-generating resistance wire as a means to heat the board.
The equipment is large-scale because the data center is provided separately from the board. Furthermore, since the substrate and the heater are separated, the thermal response of the substrate is poor, making temperature control difficult.
本発明はこのような問題点を解決するなめになされたも
のであり、均一な基板を再現性良く形成でき、装置が大
がかりにならず、しかも基板の温度コントロールが容易
なＥＬ素子の製造方法を実現することを目的とする。The present invention has been made to solve these problems, and provides a method for manufacturing an EL element that can form a uniform substrate with good reproducibility, does not require large-scale equipment, and can easily control the temperature of the substrate. The purpose is to realize this.
［課題を解決するための手段］
本発明は、
Δ板の温度を検出する温度検出手段と、基板を加熱する
加熱手段を有し、前記温度検出手段の検出温度に応じて
コントローラにより前記加熱手段を制御し、前記基板を
所定の温度にした状態で基板上にエレクトロ・ルミネッ
センス素子を形成するエレクトロ・ルミネッセンス素子
の製造方法において、
基板上にエレクトロ・ルミネッセンス素子を形成する前
に、前記基板又はこの基板に接合した基板に温度センサ
回路と熱発生源回路の両方又は−方を予め作り込んでお
くことを特徴とするエレクトロ・ルミネッセンス素子の
製造方法である。[Means for Solving the Problems] The present invention includes a temperature detection means for detecting the temperature of the Δ plate and a heating means for heating the substrate, and the heating means is controlled by a controller according to the detected temperature of the temperature detection means. In the method for manufacturing an electroluminescent element, the electroluminescent element is formed on a substrate while the substrate is heated to a predetermined temperature. This method of manufacturing an electroluminescent device is characterized in that both or both of a temperature sensor circuit and a heat generation source circuit are formed in advance on a substrate bonded to the substrate.
［実施例コ 以下、図面を用いて本発明を説明する。[Example code] The present invention will be explained below using the drawings.
第１図は本発明にかかる方法を実施するために用いる装
置の構成例を示した図である。第１図で第４図と同一の
ものは同一符号を付ける。FIG. 1 is a diagram showing an example of the configuration of an apparatus used to carry out the method according to the present invention. Components in FIG. 1 that are the same as those in FIG. 4 are given the same reference numerals.
第１図で、１１はＥＬ素子が形成されるガラス基板であ
る。このガラス基板１１は、歪点の温度がプロセスの最
高温度よりも高いものでなければならない。プロセスの
最高温度が例えば約１２００℃である場合は、ガラス基
板としては、サファイア、スピネル等で構成されたもの
が必要になる。In FIG. 1, 11 is a glass substrate on which an EL element is formed. This glass substrate 11 must have a strain point temperature higher than the maximum temperature of the process. If the maximum temperature of the process is, for example, about 1200° C., a glass substrate made of sapphire, spinel, etc. is required.
１２はガラス基板１１のＥ Ｌ素子の形成面とは反対側
の面に５ＯＩ（Ｓｉｌｉｃｏｎ ＯｎＩ ｎ Ｓ ｕ
１ ａ ｔ ｅ ｒ ）技術によりエピタキシャル成
長させられたシリコン層である。12 is a 5OI (Silicon OnI n S u
This is a silicon layer epitaxially grown using the 1 a ter ) technique.
１３と１４はシリコン７１１２に半導体プロセスにより
作り込まれた温度センサ回路と熱発生源回路である。熱
発生源回路１４としては例えばパワートランジスタが用
いられる。パワートランジスタはシリコン層１２に半導
体プロセスにより形成される。Reference numerals 13 and 14 designate a temperature sensor circuit and a heat generation source circuit that are fabricated in silicon 7112 using a semiconductor process. As the heat generation source circuit 14, for example, a power transistor is used. The power transistor is formed in the silicon layer 12 by a semiconductor process.
なお、ガラス基板１１として歪点が約６００°Ｃの無ア
ルカリガラスで構成されたものを用いる場合は、シリコ
ン基板に温度センサ回路１３と熱発生源回路１４を作り
込み、このシリコン基板を熱硬化性の接着剤等によりガ
ラス基板１１と接着する。または、使用する際に分離で
きるようにシリコン基板とガラス基板を治具等により挟
むことによって重ね合せてもよい。In addition, when using a glass substrate 11 made of alkali-free glass with a strain point of about 600°C, the temperature sensor circuit 13 and the heat generation source circuit 14 are built into the silicon substrate, and the silicon substrate is thermally hardened. It is bonded to the glass substrate 11 using an adhesive or the like. Alternatively, the silicon substrate and the glass substrate may be placed on top of each other by being sandwiched between them using a jig or the like so that they can be separated during use.
次に、ガラス基板に膜を形成するまでの手順を説明する
。Next, the steps up to forming a film on a glass substrate will be explained.
ガラス基板１１のＥＬ素子形成面と反対側の面にシリコ
ン層１２をエピタキシャル成長する。A silicon layer 12 is epitaxially grown on the surface of the glass substrate 11 opposite to the surface on which the EL element is formed.
次に、半導体プロセスにより、このシリコン層に温度セ
ンサ回路１３と熱発生源回路１４を作り込む。Next, a temperature sensor circuit 13 and a heat generation source circuit 14 are formed in this silicon layer by a semiconductor process.
その後、カラス基板１１を基板ホルダ２に取付け、基板
の温度を温度センサ回路１３で検出し、検出温度をもと
にコントローラ５で熱発生源回路１４の駆動を制御し、
基板の温度を目標加熱温度に制御する。After that, the glass substrate 11 is attached to the substrate holder 2, the temperature of the substrate is detected by the temperature sensor circuit 13, and the drive of the heat generation source circuit 14 is controlled by the controller 5 based on the detected temperature,
Control the temperature of the substrate to the target heating temperature.
目標温度になったところで、蒸着源６を用いて基板１１
上にＥ、Ｌ素子を構成する膜を蒸着する。When the target temperature is reached, the substrate 11 is heated using the vapor deposition source 6.
A film constituting the E and L elements is deposited thereon.
以下は通常のＥ［、素子の製造工程と同様である。The following steps are the same as the normal E[, element manufacturing process.
なお、温度センサ回路１３と熱発生源回路１４の一方の
みが設けられていてもよい、第２図は温度センサ回路の
みを設けたもので、第３図は熱発生源回路のみを設けた
ものである。Note that only one of the temperature sensor circuit 13 and the heat generation source circuit 14 may be provided; FIG. 2 shows an example in which only a temperature sensor circuit is provided, and FIG. 3 shows an example in which only a heat generation source circuit is provided. It is.
第２図の装置では、熱発生源回路１４の代りに巻線抵抗
のヒータ３を用い、シリコン基板１１に温度センサ回路
１３のみを作り込んだ構成になっている。In the device shown in FIG. 2, a wire-wound resistance heater 3 is used in place of the heat generation source circuit 14, and only the temperature sensor circuit 13 is built into the silicon substrate 11.
第３図の装置では、温度センサ回路１３の代りに熱電対
４を用い、シリコン基板１１に熱発生源回路１４のみを
作り込んだ構成になっている。In the device shown in FIG. 3, a thermocouple 4 is used instead of the temperature sensor circuit 13, and only a heat generation source circuit 14 is built into the silicon substrate 11.
また、温度センサ回路１３は異なる位置に複数個設けら
れていてもよい、これによって、基板面内での温度分布
を検出することが可能になり、基板面内で部分的に加熱
、冷却をすれば、きわめて均一な発光層を形成できるこ
とになる。Further, a plurality of temperature sensor circuits 13 may be provided at different positions. This makes it possible to detect the temperature distribution within the substrate surface, and to avoid heating or cooling partially within the substrate surface. This means that an extremely uniform light-emitting layer can be formed.
また、温度センサ回路１３と熱発生源回路１４は、ガラ
ス基板に直接形成されていてもよい、温度センサ回路と
パワートランジスタを用いた熱発生源回路はＳｏｌ技術
によりガラス基板に形成することができる。Further, the temperature sensor circuit 13 and the heat generation source circuit 14 may be formed directly on the glass substrate, and the temperature sensor circuit and the heat generation source circuit using power transistors can be formed on the glass substrate using Sol technology. .
また、シリコン層１２にコントローラ５の集積回路を形
成してもよい。Further, an integrated circuit of the controller 5 may be formed on the silicon layer 12.
［効果コ 本発明によれば次の効果が得られる。[Effect Co. According to the present invention, the following effects can be obtained.
■基板に直接又は間接的に温度センサ回路が作り込まれ
ているため、基板の温度を正確に検出できる。これによ
って、所望の膜を再現性良く形成できる。■Since the temperature sensor circuit is built directly or indirectly into the board, the temperature of the board can be detected accurately. With this, a desired film can be formed with good reproducibility.
■基板に直接又は間接的に熱発生源回路が作り込まれて
いるため、基板と別に加熱する手段を設ける必要がなく
装置が大かかりにならない、また、基板の熱応答性が良
くなるため、温度制御が容易になる。複数個の熱発生源
回路を設けると、基板を部分的に加熱、冷却でき、きわ
めて均一な膜を形成できる。■Since the heat generation source circuit is built directly or indirectly into the board, there is no need to provide a means for heating separately from the board, so the equipment does not become bulky, and the thermal responsiveness of the board is improved. Temperature control becomes easier. By providing a plurality of heat generating circuits, the substrate can be heated and cooled locally and a highly uniform film can be formed.
第１図〜第３図はは本発明にかかる方法の実施に用いる
装置の構成例を示した図、第４図は従来におけるＥＬ素
子の製造に用いる装置の一例を示した図である。
５・・・コントローラ、１１・・・基板、１２・・・シ
リコン層、１３・・・温度センサ回路、１４・・・熱発
生源回路。1 to 3 are diagrams showing an example of the configuration of an apparatus used for implementing the method according to the present invention, and FIG. 4 is a diagram showing an example of an apparatus used for manufacturing a conventional EL element. 5... Controller, 11... Substrate, 12... Silicon layer, 13... Temperature sensor circuit, 14... Heat generation source circuit.
Claims (3)
熱する加熱手段を有し、前記温度検出手段の検出温度を
もとにコントローラにより前記加熱手段を制御し、前記
基板を所定の温度にした状態で基板上にエレクトロ・ル
ミネッセンス素子を形成するエレクトロ・ルミネッセン
ス素子の製造方法において、 基板上にエレクトロ・ルミネッセンス素子を形成する前
に、前記基板又はこの基板と接合する基板に温度センサ
回路を予め作り込んでおくことを特徴とするエレクトロ
・ルミネッセンス素子の製造方法。(1) It has a temperature detection means for detecting the temperature of the substrate and a heating means for heating the substrate, and the heating means is controlled by a controller based on the temperature detected by the temperature detection means, and the substrate is heated to a predetermined temperature. In the method for manufacturing an electroluminescent device, which forms an electroluminescent device on a substrate in a state where the electroluminescent device is A method for manufacturing an electroluminescent element, characterized in that it is manufactured in advance.
熱する加熱手段を有し、前記温度検出手段の検出温度に
応じてコントローラにより前記加熱手段を制御し、前記
基板を所定の温度にした状態で基板上にエレクトロ・ル
ミネッセンス素子を形成するエレクトロ・ルミネッセン
ス素子の製造方法において、 基板上にエレクトロ・ルミネッセンス素子を形成する前
に、前記基板又はこの基板に接合した基板に熱発生源回
路を予め作り込んでおくことを特徴とするエレクトロ・
ルミネッセンス素子の製造方法。(2) It has a temperature detection means for detecting the temperature of the substrate and a heating means for heating the substrate, and the heating means is controlled by a controller according to the temperature detected by the temperature detection means to bring the substrate to a predetermined temperature. In the method for manufacturing an electroluminescent element, in which an electroluminescent element is formed on a substrate in a state where the electroluminescent element is Electro, which is characterized by being prepared in advance.
A method for manufacturing a luminescent element.
熱する加熱手段を有し、前記温度検出手段の検出温度に
応じてコントローラにより前記加熱手段を制御し、前記
基板を所定の温度にした状態で基板上にエレクトロ・ル
ミネッセンス素子を形成するエレクトロ・ルミネッセン
ス素子の製造方法において、 基板上にエレクトロ・ルミネッセンス素子を形成する前
に、前記基板又はこの基板に接合した基板に温度センサ
回路と熱発生源回路を予め作り込んでおくことを特徴と
するエレクトロ・ルミネッセンス素子の製造方法。(3) It has a temperature detection means for detecting the temperature of the substrate and a heating means for heating the substrate, and the heating means is controlled by a controller according to the temperature detected by the temperature detection means to bring the substrate to a predetermined temperature. In the method for manufacturing an electroluminescent device, in which an electroluminescent device is formed on a substrate in a state where the electroluminescent device is A method for manufacturing an electroluminescent device, characterized by preparing a source circuit in advance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63059962A JPH01235190A (en) | 1988-03-14 | 1988-03-14 | Manufacture of electroluminescence element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63059962A JPH01235190A (en) | 1988-03-14 | 1988-03-14 | Manufacture of electroluminescence element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01235190A true JPH01235190A (en) | 1989-09-20 |
Family
ID=13128298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63059962A Pending JPH01235190A (en) | 1988-03-14 | 1988-03-14 | Manufacture of electroluminescence element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01235190A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003056880A3 (en) * | 2001-12-24 | 2004-02-12 | Saint Gobain | Laminated glass plane with electrically controlled functional element |
-
1988
- 1988-03-14 JP JP63059962A patent/JPH01235190A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003056880A3 (en) * | 2001-12-24 | 2004-02-12 | Saint Gobain | Laminated glass plane with electrically controlled functional element |
| US7009156B2 (en) | 2001-12-24 | 2006-03-07 | Saint-Gobain Glass France | Laminated glass plane with electrically controlled functional element |
| CZ307923B6 (en) * | 2001-12-24 | 2019-08-21 | Saint-Gobain Glass France | Laminated pane with electric functional element |
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