JPH01233911A - Operating method for photoelectric switch - Google Patents

Operating method for photoelectric switch

Info

Publication number
JPH01233911A
JPH01233911A JP5941588A JP5941588A JPH01233911A JP H01233911 A JPH01233911 A JP H01233911A JP 5941588 A JP5941588 A JP 5941588A JP 5941588 A JP5941588 A JP 5941588A JP H01233911 A JPH01233911 A JP H01233911A
Authority
JP
Japan
Prior art keywords
semiconductor laser
light
drive circuit
output
adjustment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5941588A
Other languages
Japanese (ja)
Inventor
Shiro Ogata
司郎 緒方
Shigeru Aoyama
茂 青山
Tokuo Inoue
井上 十九男
Maki Yamashita
山下 牧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP5941588A priority Critical patent/JPH01233911A/en
Publication of JPH01233911A publication Critical patent/JPH01233911A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electronic Switches (AREA)

Abstract

PURPOSE:To strengthen an output light at the adjustment so as to facilitate the adjustment and to weaken the output light at the activation so as to offer a long service life for the semiconductor laser by adopting the constitution so that an optional output luminous intensity is obtained in a photoelectric switch employing the semiconductor laser for its projection section. CONSTITUTION:An output control circuit 2 of the semiconductor laser 1 has a pulse light drive circuit 21 and a DC light drive circuit 22. Then the circuits 21, 22 are connected to a power supply 3 by a changeover switch 4. In case of the optical axis adjustment or the like, the changeover switch 4 is connected to the DC light drive circuit 22 and the semiconductor laser 1 is stimulated continuously by the continuous drive. After the end of the optical axis adjustment when normal detection is to be implemented, the switch 4 is thrown to the position of the pulse light drive circuit 21. The drive circuit 21 consists, e.g., of an oscillation circuit and a switching transistor(TR) and the oscillated output of the oscillation circuit applies turn-on/turn-off control to the switching TR, thereby intermitting the drive current of the semiconductor laser 1. The duty ratio is given by b/a in figure.

Description

【発明の詳細な説明】 発明の要約 半導体レーザを投光部に用いた光電スイッチにおいて、
出力光を連続発振とパルス発振に切り換えできるように
する。またはパルス発振のデユーティ比を任意に設定で
きるようにする。このことにより、任意の出力光強度を
得られる構成とし。
[Detailed Description of the Invention] Summary of the Invention In a photoelectric switch using a semiconductor laser in a light projecting section,
To enable output light to be switched between continuous oscillation and pulse oscillation. Alternatively, the duty ratio of pulse oscillation can be set arbitrarily. This makes it possible to obtain any output light intensity.

調整時には出力光を強くして調整容易に、動作時には出
力光を弱くして半導体レーザを長寿命化する効果を得る
During adjustment, the output light is strengthened to facilitate adjustment, and during operation, the output light is weakened to prolong the life of the semiconductor laser.

発明の背景 この発明は、半導体レーザを光源に用いた光電スイッチ
の動作方法、とくに光軸調整のための動作方法に関する
BACKGROUND OF THE INVENTION The present invention relates to a method of operating a photoelectric switch using a semiconductor laser as a light source, and particularly to a method of operating a photoelectric switch for adjusting an optical axis.

光電スイッチ、とくに投光器と受光器とを対向配置する
透過形の光電スイッチの設置時や調整時におけ不光軸調
整は困難な作業の1つである。光電スイッチからの投射
光が弱いと投射光が見えないかまたは見えにくいので光
軸調整作業に長い時間がかかる。とくに投射光が赤外光
または近赤外光の場合にはたいへんやりずらい。
Adjustment of the non-optical axis is one of the difficult tasks when installing or adjusting a photoelectric switch, especially a transmission type photoelectric switch in which a light emitter and a light receiver are arranged facing each other. If the projected light from the photoelectric switch is weak, the projected light cannot be seen or is difficult to see, so it takes a long time to adjust the optical axis. This is especially difficult when the projected light is infrared or near-infrared light.

一方、光電スイッチの投射光強度を大きくすると、投射
光が見えるまたは見えやすくなるので。
On the other hand, if the intensity of the projected light of the photoelectric switch is increased, the projected light becomes visible or easier to see.

光軸調整はその分やりやすくなる。しかしながら、光源
としての半導体レーザを大電流で駆動することになるの
でその寿命が短くなる。また。
Optical axis adjustment becomes easier. However, since the semiconductor laser serving as the light source is driven with a large current, its lifespan is shortened. Also.

レーザ光はビーム径が比較的小さくエネルギが大きいの
で高強度のレーザ光は人体とくに目に対して危険である
Since laser light has a relatively small beam diameter and high energy, high-intensity laser light is dangerous to the human body, especially the eyes.

発明の概要 この発明は上記実情に鑑み、光軸調整が容易でしかも長
寿命化を図りかつ安全な光電スイッチの動作方法を提供
することを目的とする。
SUMMARY OF THE INVENTION In view of the above-mentioned circumstances, an object of the present invention is to provide a method for operating a photoelectric switch that facilitates optical axis adjustment, extends life, and is safe.

半導体レーザを光源とする光電スイッチのこの発明によ
る動作方法は、光電スイッチの調整、設置にさいしては
半導体レーザを連続発光またはデユーティ比が相対的に
大きなパルス発光により駆動して出力光強度を相対的に
大きく設定し5通常動作時には半導体レーザをデユーテ
ィ比が相対的に小さなパルス発光駆動することにより出
力光強度を相対的に小さく設定することを特徴とする。
The operating method of a photoelectric switch using a semiconductor laser as a light source according to the present invention is to drive the semiconductor laser with continuous light emission or pulsed light emission with a relatively large duty ratio to adjust the output light intensity when adjusting and installing the photoelectric switch. 5. During normal operation, the output light intensity is set relatively low by driving the semiconductor laser to emit pulses with a relatively small duty ratio.

この発明によると、yJ整、設置時における光軸調整に
さいしては光源としての半導体レーザを連続発振または
デユーティ比の大きなパルス発振にすることにより出力
光強度を大きくしている。したがって、投射光ビームが
目視できるかまたは目視しやすくなるので、光軸調整が
容易となる。他方、動作時にはパルス発振またはデユー
ティ比の小さなパルス発振にすることにより、半導体レ
ーザの寿命を長<シ、かつ出力光強度が弱いので。
According to this invention, for yJ adjustment and optical axis adjustment during installation, the output light intensity is increased by using a semiconductor laser as a light source to perform continuous oscillation or pulse oscillation with a large duty ratio. Therefore, the projected light beam is visible or easy to see, making it easy to adjust the optical axis. On the other hand, by using pulse oscillation or pulse oscillation with a small duty ratio during operation, the life of the semiconductor laser can be extended and the output light intensity is low.

直接光に対しても安全となる。It is also safe against direct light.

とくにこの発明は、フレネル・レンズを採用した光電ス
イッチについて有用である。通常の凸レンズを用いた場
合には半導体レーザ光はあまり(たとえば直径5rII
m程度)絞ることはできないが、フしネル・レンズを用
いると極端に小さく(たとえば1mm程度)接続ること
が可能となり。
This invention is particularly useful for photoelectric switches that employ Fresnel lenses. When a normal convex lens is used, the semiconductor laser light is not very strong (for example, the diameter is 5rII
Although it is not possible to narrow down the aperture (approximately 1 mm), it is possible to make the connection extremely small (for example, approximately 1 mm) using a finnel lens.

投射レーザ光の単位面積当りのエネルギは強大となる。The energy per unit area of the projected laser beam becomes strong.

したがって、このレーザ光は人体に対して危険である。Therefore, this laser light is dangerous to the human body.

この発明では通常動作時はデユーティ比の比較的大きな
パルス発振としているので、比較的安全となる。また半
導体レーザ光が近赤外光の場合にはレーザ・ビームを連
続発振またはデユーティ比の大きなパルス発振とし、か
つ小さく絞ると見えるようになり、光軸調整が容易とな
る。
In the present invention, pulse oscillation with a relatively large duty ratio is used during normal operation, so it is relatively safe. Further, when the semiconductor laser light is near-infrared light, the laser beam can be made into continuous oscillation or pulse oscillation with a large duty ratio, and it can be seen by narrowing down to a small size, making it easier to adjust the optical axis.

この発明は透過形のみならず反射形の光電スイッチに対
してももちろん適用可能である。
This invention is of course applicable not only to transmission type photoelectric switches but also to reflective type photoelectric switches.

実施例の説明 第1図は、光電スイッチの光源としての半導体レーザを
調整時(設置時を含む)には連続発振とし1通常の検知
動作時にはパルス発振したときの出力光強度の様子を示
すものである。
Description of Examples Figure 1 shows the output light intensity when the semiconductor laser as the light source of the photoelectric switch is continuous oscillation during adjustment (including installation) and pulse oscillation during normal detection operation. It is.

このような制御はたとえば第2図に示す構成によって実
現できる。この図において、半導体レーザ1の出力制御
回路2はパルス点灯駆動回路21と直流点灯駆動回路2
2とを含んでいる。そして、これらの回路2r、 22
は切換スイッチ4によって電源3に接続される。
Such control can be realized, for example, by the configuration shown in FIG. In this figure, the output control circuit 2 of the semiconductor laser 1 includes a pulse lighting drive circuit 21 and a DC lighting drive circuit 2.
2. And these circuits 2r, 22
is connected to the power source 3 by a changeover switch 4.

光軸調整等にさいしては切換スイッチ4は直流点灯駆動
回路22に接続され、半導体レーザ1は連続駆動により
連続発振する。光軸調整等が終了。
For optical axis adjustment and the like, the changeover switch 4 is connected to a DC lighting drive circuit 22, and the semiconductor laser 1 is continuously driven to oscillate continuously. Optical axis adjustment etc. are completed.

通常の検知動作を行なわせるときにはスイッチ4をパル
ス点灯駆動回路21側に切換える。この駆動回路21は
たとえば発振回路とスイッチング・トランジスタとを含
み2発振回路の発振出力によってスイッチング・トラン
ジスタをオン、オフ制御し、半導体レーザ1の駆動電流
を断続する。
When performing a normal detection operation, the switch 4 is switched to the pulse lighting drive circuit 21 side. This drive circuit 21 includes, for example, an oscillation circuit and a switching transistor, and controls the switching transistor to be turned on and off by the oscillation outputs of the two oscillation circuits, thereby intermittent the drive current of the semiconductor laser 1.

デユーティ比は第1図においてb / aで与えられる
The duty ratio is given by b/a in FIG.

第3図および第4図は、半導体レーザに、調整時にはデ
ユーティ比の大きなパルス発振を、動作時には小さなパ
ルス発振をさせたときの出力光強度の様子を示すもので
ある。
FIGS. 3 and 4 show the output light intensity when the semiconductor laser is caused to emit pulses with a large duty ratio during adjustment and emit small pulses during operation.

第3図はパルス周期を一定としてデユーティ比を変え゛
たものである。調整時のデユーティ比b/a>動作時1
のデユーティ比b1/a1〉動作時2のデユーティ比b
/a、の関係にある。動作時1と2は必要に応じて切換
えればよい。
In FIG. 3, the pulse period is kept constant and the duty ratio is varied. Duty ratio b/a during adjustment > 1 during operation
duty ratio b1/a1> duty ratio b of 2 during operation
The relationship is /a. During operation, 1 and 2 may be switched as necessary.

第4図はパルス111(オン時間)を一定としてデユー
ティ比を変えたものであり、調整時、動作時1,2にお
けるデユーティ比の関係は第3図に示すものと同じであ
る。
In FIG. 4, the pulse 111 (on time) is kept constant and the duty ratio is changed, and the relationship between the duty ratios during adjustment and during operation 1 and 2 is the same as that shown in FIG.

このような動作制御は第5図に示す回路を用いて実現で
きる。この図において第2図に示すものと同一物には同
一符号が付けられている。パルス点灯駆動回路21に含
まれている可変抵抗5を変えることにより1発振のパル
ス中や周波数を変えるまたは切換えることができる。
Such operation control can be realized using the circuit shown in FIG. In this figure, the same parts as shown in FIG. 2 are given the same reference numerals. By changing the variable resistor 5 included in the pulse lighting drive circuit 21, it is possible to change or switch the pulse duration or frequency of one oscillation.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は第1実施例を示し、第1図は出力
信号波形図、第2図は動作制御回路を示すブロック図で
ある。 第3図から第5図は第2の実施例を示し、第3図および
第4図は出力信号波形図、第5図は動作制御回路のブロ
ック図である。 1・・・半導体レーザ、  2・・・出力制御回路。 3・・・電源、      4・・・切換スイッチ5・
・・可変抵抗。 21・・・パルス点灯駆動回路。 22・・・直流点灯駆動回路。 以  上 第1図 第2図
1 and 2 show a first embodiment, FIG. 1 is an output signal waveform diagram, and FIG. 2 is a block diagram showing an operation control circuit. 3 to 5 show the second embodiment, FIGS. 3 and 4 are output signal waveform diagrams, and FIG. 5 is a block diagram of the operation control circuit. 1... Semiconductor laser, 2... Output control circuit. 3...Power supply, 4...Selector switch 5.
...Variable resistance. 21...Pulse lighting drive circuit. 22...DC lighting drive circuit. Above Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] 半導体レーザを光源とする光電スイッチにおいて、光電
スイッチの調整、設置にさいしては半導体レーザを連続
発光またはデューティ比が相対的に大きなパルス発光に
より駆動して出力光強度を相対的に大きく設定し、通常
動作時には半導体レーザをデューティ比が相対的に小さ
なパルス発光駆動することにより出力光強度を相対的に
小さく設定することを特徴とする光電スイッチの動作方
法。
In a photoelectric switch that uses a semiconductor laser as a light source, when adjusting and installing the photoelectric switch, drive the semiconductor laser with continuous light emission or pulsed light emission with a relatively large duty ratio to set the output light intensity relatively high. A method for operating a photoelectric switch, characterized in that during normal operation, the output light intensity is set relatively low by driving a semiconductor laser to emit pulses with a relatively small duty ratio.
JP5941588A 1988-03-15 1988-03-15 Operating method for photoelectric switch Pending JPH01233911A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5941588A JPH01233911A (en) 1988-03-15 1988-03-15 Operating method for photoelectric switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5941588A JPH01233911A (en) 1988-03-15 1988-03-15 Operating method for photoelectric switch

Publications (1)

Publication Number Publication Date
JPH01233911A true JPH01233911A (en) 1989-09-19

Family

ID=13112617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5941588A Pending JPH01233911A (en) 1988-03-15 1988-03-15 Operating method for photoelectric switch

Country Status (1)

Country Link
JP (1) JPH01233911A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6342213A (en) * 1986-08-07 1988-02-23 Hokuyo Automatic Co Photoelectric switch

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6342213A (en) * 1986-08-07 1988-02-23 Hokuyo Automatic Co Photoelectric switch

Similar Documents

Publication Publication Date Title
KR101573953B1 (en) Method and apparatus for reducing optical signal speckle
JP2020100398A (en) Vehicular lighting device and lighting device system
JPH08136955A (en) Automatic antidazzle mirror
CN101754555A (en) Driving method for discharge lamp, driving device for discharge lamp, light source device, and image display apparatus
JPH01233911A (en) Operating method for photoelectric switch
JPS607840B2 (en) optical signal device
JP2531111B2 (en) Laser pointer
US20200378577A1 (en) Vehicular lighting device
US6084896A (en) Laser light-source apparatus and method of producing light beam
JP2500753B2 (en) Small laser pointer
RU2097223C1 (en) Method of and device for preventing blinding of on-coming drivers (versions)
JPH1114358A (en) Laser surveying instrument
JP2005083790A (en) Laser level
WO2006090294A1 (en) Light-emitting unit and light-emitting method thereof
JPH08194446A (en) High brightness light-emitting diode flickering device
KR200297496Y1 (en) Automatic control apparatus of intensity of illumination for traffic light
CN213342775U (en) MEMS laser headlamp
JP2782450B2 (en) Laser pointer device
KR0151295B1 (en) Multi-function lcd projector
JPH1197196A (en) Dimming device for liquid crystal display
JP3093743U (en) Lamp lighting control circuit
JPH06171420A (en) Headlamp device for vehicle
JP3548816B2 (en) Photoelectric sensor and light emitting method thereof
JPH08330088A (en) Flash illuminator
JPH0254898A (en) Lighting device