JPH01233786A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH01233786A JPH01233786A JP63060886A JP6088688A JPH01233786A JP H01233786 A JPH01233786 A JP H01233786A JP 63060886 A JP63060886 A JP 63060886A JP 6088688 A JP6088688 A JP 6088688A JP H01233786 A JPH01233786 A JP H01233786A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- substrate
- light emitting
- waveguide
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 3
- 230000035515 penetration Effects 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、高速データ転送用光デイスク装置の光ヘッド
の光源等に用いられる安定した複数光ビームが得られる
半導体レーザ装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor laser device capable of producing a plurality of stable light beams, which is used as a light source of an optical head of an optical disk device for high-speed data transfer.
光デイスク装置のデータ転送速度の向上のため、複数の
光ビームで光デイスク上の複数のトラックを同時にトレ
ースし、複数のトラックに並列に情報の記録や再生を行
う方法が知られている。In order to improve the data transfer speed of optical disk devices, a method is known in which multiple tracks on an optical disk are simultaneously traced using multiple light beams, and information is recorded and reproduced in parallel on the multiple tracks.
このとき、光ヘッドの光源として、同一パッケージ内に
複数の発光点を有する半導体レーザを用いることが光ヘ
ッドの部品点数を削減、小型化、軽量化の点で有利であ
る。また情報の記録または再生動作を安定に信頼性よく
行うためには、個々の発光点の光出力を独立にモニター
し制御する必要がある。装置め小型化のためには、光出
力のモニターは通常の1ビームの半導体レーザで行われ
ているようにレーザパッケージ内部に収めることが望ま
しい。At this time, it is advantageous to use a semiconductor laser having a plurality of light emitting points in the same package as the light source of the optical head in terms of reducing the number of parts, making the optical head smaller, and making it lighter. Furthermore, in order to stably and reliably perform information recording or reproducing operations, it is necessary to independently monitor and control the optical output of each light emitting point. In order to miniaturize the device, it is desirable to house the optical output monitor inside the laser package, as is done with ordinary one-beam semiconductor lasers.
複数の光ビームを発する半導体レーザ装置は、従来、第
3図(a)、(b)((a)は平面図。Conventionally, a semiconductor laser device that emits a plurality of light beams is shown in FIGS. 3(a) and 3(b) ((a) is a plan view.
(b)′は側面図)に示すように、発光点1a。(b)' is a side view), the light emitting point 1a.
lb、lcを複数配列したアレイ型の半導体レーザの後
発光点の直後に他の発光点からの出射光が回り込まない
ように壁またはトンネル状の導波管5を基板2に形成し
、その導波管5を出射した光を導波管端部に設置した複
数個の光検出器4にてそれぞれ検出する構造となってい
る。A wall or tunnel-shaped waveguide 5 is formed on the substrate 2 immediately after a light emitting point of an array type semiconductor laser in which a plurality of lbs and lcs are arranged to prevent the emitted light from other light emitting points from going around. The structure is such that the light emitted from the waveguide 5 is detected by a plurality of photodetectors 4 installed at the ends of the waveguide.
半導体レーザの後発光点の直後に壁またはトンネル状の
導波管を形成し、その導波管を出射した光を複数の光検
出器にて検出する場合、半導体レーザの発光点と導波管
の入射端の距離、及び導波管の光出射口と光検出器の間
の距離を近接させる必要があり、またその位置も精度が
必要である。When a wall or tunnel-shaped waveguide is formed immediately after the light emitting point of the semiconductor laser and the light emitted from the waveguide is detected by multiple photodetectors, the light emitting point of the semiconductor laser and the waveguide It is necessary to make the distance between the input end of the waveguide and the distance between the light exit port of the waveguide and the photodetector close, and the position also needs to be accurate.
このような半導体レーザ装置は形が小さいため正確に位
置決めするのが難しく、クロストークは避は難い、この
結果、正確なモニターができず、出射光が不安定になる
。Since such a semiconductor laser device is small in size, it is difficult to accurately position it, and crosstalk is inevitable.As a result, accurate monitoring is not possible and the emitted light becomes unstable.
本発明は上述の問題点を解決して安定な出力光が得られ
る半導体レーザ装置を得ることにある。The object of the present invention is to solve the above-mentioned problems and provide a semiconductor laser device that can provide stable output light.
本発明の半導体レーザは、独立駆動可能な複数個の発光
点を有する半導体レーザと、前記半導体レーザからの出
射光をその発光点ごとに独立に伝搬させる複数の導波管
と、前記導波管の内部を伝搬した光の強度を検出する複
数の光検出器を備え、前記半導体レーザと、前記導波管
と、前記光検出器を同一のパッケージ内に収め、前記導
波管は、表面に複数のストライプ状凸部を有する基板の
凸部のある面をヒートシンク上に接着または融着した基
板の凸部とヒートシンクとで囲まれた領域で構成し、前
記光検出器は前記導波管内部の基板面に設けた構造とな
っている。The semiconductor laser of the present invention includes a semiconductor laser having a plurality of light emitting points that can be driven independently, a plurality of waveguides that propagate light emitted from the semiconductor laser independently for each light emitting point, and the waveguide. The semiconductor laser, the waveguide, and the photodetector are housed in the same package, and the waveguide is A surface of a substrate having a plurality of striped convex portions is bonded or fused onto a heat sink, and a region surrounded by the convex portions of the substrate and the heat sink is configured, and the photodetector is located inside the waveguide. It has a structure that is provided on the substrate surface.
本発明においては、複数個の発光点から出射した光はそ
れぞれ異なる導波管内部を伝搬し、導波管内部に構成さ
れたそれぞれ異なる光検出器にて検出される。したがっ
て個々の光出力の独立検出が低ストロークで可能となる
。また光検出器を外付けにする必要がないので、位置合
わせの必要がなく調整の手間が減る。In the present invention, light emitted from a plurality of light emitting points propagates inside different waveguides, and is detected by different photodetectors configured inside the waveguides. Independent detection of the individual light outputs is therefore possible with low strokes. Furthermore, since there is no need to attach an external photodetector, there is no need for positioning, which reduces the effort required for adjustment.
第1図に本発明の実施例を示す。第1図(a)は本発明
の半導体レーザ装置の上面図、第1図(b)は側面図で
ある。複数の発光点1a、、1b。FIG. 1 shows an embodiment of the present invention. FIG. 1(a) is a top view of the semiconductor laser device of the present invention, and FIG. 1(b) is a side view. A plurality of light emitting points 1a, 1b.
ICを有する半導体レーザ1をヒートシンク3の上に融
着し、この半導体レーザ1の端面直後に複数の溝を有す
る基板2を設けている。導波管、5は基板2の溝の両側
の凸部とヒートシンク3によって形成されるトンネル状
の部分から成っている。A semiconductor laser 1 having an IC is fused onto a heat sink 3, and a substrate 2 having a plurality of grooves is provided immediately after the end face of the semiconductor laser 1. The waveguide 5 consists of a tunnel-shaped portion formed by the convex portions on both sides of the groove of the substrate 2 and the heat sink 3.
光検出器4は、第1図(b)に示すように導波管5内部
の基板面に融着して設けられた。このとき半導体レーザ
1の端面と基板2の入射端面を近接して設置することに
より他の発光点からの光の回り込みを抑えることができ
る。The photodetector 4 was provided by being fused to the substrate surface inside the waveguide 5, as shown in FIG. 1(b). At this time, by placing the end face of the semiconductor laser 1 and the incident end face of the substrate 2 close to each other, it is possible to suppress light from going around from other light emitting points.
第2図は第1図における導波管を持つ基板の一例の斜視
図である。基板の材質としては、例えばシリコン、ゲル
マニウム、インジウムガリウムヒ素などが用いられる。FIG. 2 is a perspective view of an example of a substrate having a waveguide in FIG. 1. As the material of the substrate, silicon, germanium, indium gallium arsenide, etc. are used, for example.
第2図(a)は、基板表面にエツチングまたは機械的な
加工などにより溝を形成し、その溝の内面に拡散または
イオン注入などによりpn接合を形成して光検出器を構
成した例である。第2図(b)は、基板表面にアレイ状
に光検出器を構成しその上にアレイ状光検出器の分割線
上に印刷などの手法をもちいて遷択的に膜をつけ、段差
を形成した例である。なお光検出器の電極は基板2にス
ルーホールを設け、段差のある面の反対側の面でとるか
、あるいは基板2上の段差の上の部分に電極を引出し、
ヒートシンク上にパターニングされた電極とコンタクト
するという方法が採られる。Figure 2(a) shows an example in which a photodetector is constructed by forming a groove on the substrate surface by etching or mechanical processing, and forming a pn junction on the inner surface of the groove by diffusion or ion implantation. . In Figure 2(b), photodetectors are arranged in an array on the substrate surface, and then a film is selectively applied on the dividing line of the arrayed photodetector using a method such as printing to form a step. This is an example. Note that the electrode of the photodetector can be provided by providing a through hole in the substrate 2 and taking it on the surface opposite to the surface with the step, or by drawing out the electrode above the step on the substrate 2.
The method used is to make contact with an electrode patterned on a heat sink.
なお本実施例においては3個の発光点を有する半導体レ
ーザについて述べたが、発光点を2個または4個以上有
する半導体レーザの場合についても同様である。In this embodiment, a semiconductor laser having three light emitting points has been described, but the same applies to a semiconductor laser having two or four or more light emitting points.
以上説明したように、本発明の半導体レーザ装置では、
導波管内に光検出器が設置しであるため複数の発光点を
持つ半導体レーザからの出射光はそれぞれ異なる導波管
内部を伝搬し、導波管内部のそれぞれ異なる光検出器に
て検出される。したがって個々の光出力の独立検出が低
クロストークで可能という効果がある。As explained above, in the semiconductor laser device of the present invention,
Since the photodetector is installed inside the waveguide, the light emitted from the semiconductor laser with multiple light emitting points propagates through different waveguides and is detected by different photodetectors inside the waveguide. Ru. Therefore, there is an effect that independent detection of each optical output is possible with low crosstalk.
第1図は本発明の一実施例を示す上面図及び側面図、第
2図は基板上の段差および先出器の構成を示す図、第3
図は従来の例を示す上面図および側面図である。
1・・・半導体レーザ、2・・・基板、3・・・ヒート
シンク、4・・・光検出器、5・・・導波管。FIG. 1 is a top view and side view showing one embodiment of the present invention, FIG.
The figures are a top view and a side view showing a conventional example. DESCRIPTION OF SYMBOLS 1... Semiconductor laser, 2... Substrate, 3... Heat sink, 4... Photodetector, 5... Waveguide.
Claims (1)
と、前記半導体レーザからの出射光をその発光点ごとに
独立に伝搬させる複数の導波管と、前記導波管の内部を
伝搬した光の強度を検出する複数の光検出器を備え、前
記半導体レーザと、前記導波管と、前記光検出器を同一
のパッケージ内に収め、前記導波管は、表面に複数のス
トライプ状の凸部を有する基板の凸部のある面をヒート
シンク上に接着または融着した基板の凸部とヒートシン
クとで囲まれた領域で構成し、前記光検出器は前記導波
管内部の基板面に設けたことを特徴とする半導体レーザ
装置。A semiconductor laser having a plurality of light emitting points that can be driven independently; a plurality of waveguides that propagate light emitted from the semiconductor laser independently for each light emitting point; The semiconductor laser, the waveguide, and the photodetector are housed in the same package, and the waveguide has a plurality of striped protrusions on its surface. The surface of the substrate having a convex portion is bonded or fused onto a heat sink, and the photodetector is provided on the surface of the substrate inside the waveguide. A semiconductor laser device characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6088688A JP2681980B2 (en) | 1988-03-14 | 1988-03-14 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6088688A JP2681980B2 (en) | 1988-03-14 | 1988-03-14 | Semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01233786A true JPH01233786A (en) | 1989-09-19 |
JP2681980B2 JP2681980B2 (en) | 1997-11-26 |
Family
ID=13155299
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6088688A Expired - Lifetime JP2681980B2 (en) | 1988-03-14 | 1988-03-14 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2681980B2 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5433046A (en) * | 1977-08-19 | 1979-03-10 | Oki Electric Ind Co Ltd | Production of optical branching element using optical fibers |
JPS59217380A (en) * | 1983-05-25 | 1984-12-07 | Fujitsu Ltd | Method of mounting light emitting element array |
JPS6379666U (en) * | 1986-11-12 | 1988-05-26 |
-
1988
- 1988-03-14 JP JP6088688A patent/JP2681980B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5433046A (en) * | 1977-08-19 | 1979-03-10 | Oki Electric Ind Co Ltd | Production of optical branching element using optical fibers |
JPS59217380A (en) * | 1983-05-25 | 1984-12-07 | Fujitsu Ltd | Method of mounting light emitting element array |
JPS6379666U (en) * | 1986-11-12 | 1988-05-26 |
Also Published As
Publication number | Publication date |
---|---|
JP2681980B2 (en) | 1997-11-26 |
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