JPH01232038A - Electret polymer sheet like article and preparation thereof - Google Patents
Electret polymer sheet like article and preparation thereofInfo
- Publication number
- JPH01232038A JPH01232038A JP63058805A JP5880588A JPH01232038A JP H01232038 A JPH01232038 A JP H01232038A JP 63058805 A JP63058805 A JP 63058805A JP 5880588 A JP5880588 A JP 5880588A JP H01232038 A JPH01232038 A JP H01232038A
- Authority
- JP
- Japan
- Prior art keywords
- polymer sheet
- electret
- film
- plasma
- charge density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 26
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 16
- -1 silane compound Chemical class 0.000 claims abstract description 12
- 229910000077 silane Inorganic materials 0.000 claims abstract description 9
- 150000002222 fluorine compounds Chemical class 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000000178 monomer Substances 0.000 abstract description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 description 38
- 229910052799 carbon Inorganic materials 0.000 description 33
- 239000004744 fabric Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000004745 nonwoven fabric Substances 0.000 description 4
- 229920000728 polyester Polymers 0.000 description 4
- 150000003377 silicon compounds Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- IDYHGSXNTVTKAC-UHFFFAOYSA-N 2-methoxyethenyl(dimethyl)silane Chemical compound COC=C[SiH](C)C IDYHGSXNTVTKAC-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- 208000010201 Exanthema Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- CBVJWBYNOWIOFJ-UHFFFAOYSA-N chloro(trimethoxy)silane Chemical compound CO[Si](Cl)(OC)OC CBVJWBYNOWIOFJ-UHFFFAOYSA-N 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- HBWGDHDXAMFADB-UHFFFAOYSA-N ethenyl(triethyl)silane Chemical compound CC[Si](CC)(CC)C=C HBWGDHDXAMFADB-UHFFFAOYSA-N 0.000 description 1
- WACOZNZTFMHMOG-UHFFFAOYSA-N ethenyl(trifluoro)silane Chemical compound F[Si](F)(F)C=C WACOZNZTFMHMOG-UHFFFAOYSA-N 0.000 description 1
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 1
- 201000005884 exanthem Diseases 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 1
- 229920005615 natural polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 206010037844 rash Diseases 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001059 synthetic polymer Polymers 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は表面高電荷密度を有する高分子シート、特に高
分子シートがポリエステルのフィルム又は織編物又は不
織布である高分子シート状物に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a polymer sheet having a high surface charge density, particularly to a polymer sheet in which the polymer sheet is a polyester film, woven or knitted fabric, or non-woven fabric.
(従来の技術)
現在エレクトレット化品はマイクロホン、ヘッドホン、
補聴器、拡声電話機など静電型電気音響トランスデユー
サ−としての応用が進んでいるが、エレクトレット化す
る膜厚を薄くできればそれだけ表面電荷密度が上り、エ
レクトレットの静電場を利用するにはより効果的である
。またエレクトレットの池の大きな用途として、不織布
等をエレクトレット化したフィルターが効率よく集じん
できるということで注目をあびている。これらの用途の
なかで、従来エレクトレット化しにくいもの、又はエレ
クトレット化してもその性能の持続性が悪いものをエレ
クトレット化したいという要望もある。例えばポリエス
テルのエレクトレット化などがこの例である。(Conventional technology) Currently, electret products include microphones, headphones,
Applications as electrostatic electroacoustic transducers in hearing aids, loudspeaker telephones, etc. are progressing, but the thinner the electret film is, the higher the surface charge density becomes, making it more effective in utilizing the electrostatic field of the electret. It is. Additionally, electret filters made from non-woven fabrics are attracting attention as a major use for electret ponds, as they can efficiently collect dust. Among these uses, there is also a desire to convert into electret materials that are conventionally difficult to convert into electrets, or those whose performance does not last long even if they are converted into electrets. An example of this is converting polyester into electret.
(発明が解決しようとする課題)
即ち本発明の課題は、フィルム、織編物、不織布等の高
分子シート状物のエレクトレット化にあるが、特にその
素材がポリエステルの場合にも表面電荷密度が著しく高
(かつ持続性のあるエレクトレット化高分子シート状物
を得んとするものである。(Problems to be Solved by the Invention) That is, the problem of the present invention is to convert polymer sheet-like materials such as films, woven or knitted fabrics, and non-woven fabrics into electrets, but especially when the material is polyester, the surface charge density is extremely high. The purpose is to obtain an electret-formed polymer sheet with high (and long-lasting) properties.
(課題を解決するための手段)
即ち、本発明は、
[l 高分子シートの少な(とも片面の表面にシラン系
化合物又はフッ素系化合物よりなる膜厚0.03〜0.
5μの架橋構造膜を有し、該薄膜がエレクトレット化し
ていることを特徴とする高分子シート状物。(Means for Solving the Problems) That is, the present invention has the following features: [l) A polymer sheet having a film thickness of 0.03 to 0.00 mm (both of which are made of a silane compound or a fluorine compound on one surface).
A polymeric sheet-like material having a crosslinked structure film of 5 μm, the thin film being an electret.
2 高分子シートの少なくとも片面の表面にプラズマ重
合によりシラン系化合物又はフッ素系化合物を用いて架
橋構造膜を形成させ、その膜厚を0.03〜0.5μと
し、その後直流の高電圧電源により該薄膜をエレクトレ
ット化することを特徴とする高分子シート状物の製造方
法。 」
に関する。2. A crosslinked structure film is formed on at least one surface of the polymer sheet using a silane compound or a fluorine compound by plasma polymerization, and the film thickness is set to 0.03 to 0.5μ, and then a high voltage DC power source is used to form a crosslinked structure film on at least one surface of the polymer sheet. A method for producing a polymer sheet, which comprises converting the thin film into an electret. ” regarding.
本発明で言う高分子シートとは、フィルム、織編物、不
織布等のシート状物を言う。高分子には特に限定はなく
、天然高分子、再生高分子、合成高分子等をさす。一般
に最も汎用性に富むポリエステルはエレクトレット化し
にくくその持続性も悪いことから本発明の手法はポリエ
ステルには特に有効と考えられる。The polymer sheet referred to in the present invention refers to sheet-like materials such as films, woven and knitted fabrics, and nonwoven fabrics. The polymer is not particularly limited, and includes natural polymers, recycled polymers, synthetic polymers, etc. Since polyester, which is generally the most versatile, is difficult to convert into electret and has poor sustainability, the method of the present invention is considered to be particularly effective for polyester.
本発明で言う少なくとも片面とは、高分子シートの一表
面または両表面を言う。高分子シート表面には、電極な
どの目的として金属等の導電物質がコート、蒸着、スパ
ッタリング、イオンブレーティング等で付着していても
よい。At least one side in the present invention refers to one or both surfaces of the polymer sheet. A conductive material such as a metal may be attached to the surface of the polymer sheet by coating, vapor deposition, sputtering, ion blasting, etc. for the purpose of an electrode or the like.
本発明に使用するシラン系化合物又はフッ素系化合物モ
ノマーについて説明する。The silane compound or fluorine compound monomer used in the present invention will be explained.
プラズマ重合法に使用されるフッ素系化合物モノマーと
は、C,F、、 C,F、で代表されるCnHmC&p
Ftn−s−pタイプ(a≧0、l≧o、 p≧0.2
n−s−p≧1の整数”) 、CF、、C,F、、C3
F@で代表されるCnHaC12pBrQFgnat−
1−P−Qタイプ (n≧1. m≧0、p≧o、
q≧0. 2n+2−s+−’p−q≧1の整数)
、C−F3で代表されるCn8mC29F*n−m−p
の環状タイプ(n≧3、m≧0、p≧012n−m−p
≧lの整数)、C,F、で代表されるCnHmC12p
Ftn−t−m−pの二重結合を有する環状タイプ(n
≧4、謄≧01門≧0.2n−2−m−p≧1の整数)
、C−FsOで代表されるタイプ、NFl、SF、、
IIFgで代表されるタイプ等、各種のものが存在する
。The fluorine compound monomers used in the plasma polymerization method are CnHmC&p, which is represented by C,F, C,F,
Ftn-s-p type (a≧0, l≧o, p≧0.2
n-s-p≧1 integer”) , CF, , C, F, , C3
CnHaC12pBrQFgnat- represented by F@
1-P-Q type (n≧1. m≧0, p≧o,
q≧0. 2n+2-s+-'p-q≧1 integer)
, Cn8mC29F*n-m-p represented by C-F3
cyclic type (n≧3, m≧0, p≧012n-m-p
≧l integer), C, F, CnHmC12p
Cyclic type (n
≧4, integer ≧01 gate≧0.2n-2-m-p≧1)
, type represented by C-FsO, NFl, SF, .
There are various types, such as the type represented by IIFg.
これらの中で成膜速度が大きく工業的に好ましいものと
してはC,F、、C3FいC3Fs、C,F、、C,F
、OlC,)1.F、等であるが、運搬上の安全性、成
膜速度などからさらに好ましくは、C3F、、C4Fs
、C,F、0である。Among these, C, F, C3F, C3Fs, C, F, C, F are industrially preferable due to their high film formation speed.
, OlC,)1. F, etc., but C3F, C4Fs are more preferable from the viewpoint of transportation safety, film formation speed, etc.
,C,F,0.
またこれらのフッ素系化合物の中には単独では成膜能力
の低い物も、少量の水素ガスまたは非重合性ガスと混合
してプラズマ重合させると成膜速度の著しく向上するも
のがある。水素ガスとの混合で成膜速度が著しく向上す
るものとして、CF、、C4s、C,F、、CtH−F
*が代表的であり、非重合性ガスと混合して成膜速度が
向上するものとして、C,F、、C,F、、C4F、、
C5F−0等が代表的である。Furthermore, some of these fluorine-based compounds have low film-forming ability when used alone, but when mixed with a small amount of hydrogen gas or non-polymerizable gas and subjected to plasma polymerization, the film-forming rate can be significantly improved. CF, , C4s, C,F, , CtH-F can significantly improve the film formation rate when mixed with hydrogen gas.
* is typical, and C, F, , C, F, , C4F, , C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,, C, F,
C5F-0 etc. are representative.
非重合性ガスの内効果の大きいのは不活性ガス類であり
、アルゴンガスは特に効果的である。フッ素系化合物は
、水素、塩素、臭素等の原子を含んでもさしつかえない
。Among the non-polymerizable gases, inert gases are most effective, and argon gas is particularly effective. The fluorine-based compound may contain atoms such as hydrogen, chlorine, and bromine.
また本発明で使用するケイ素糸化合物モ/マーとは、 p。In addition, the silicon thread compound mo/mer used in the present invention is p.
Kり CH,、C山、CL=CH,H%Q。Kri CH,, C mountain, CL=CH, H%Q.
のいずれか)で表わされるアルコキシシラン系ケイ素化
合物、
に3
0、−cI2、Cl2CH*のいずれか)で表わされる
クロロシラン系化合物、
れか、Rはアルキル基、XはOCH3、0CtHsのい
ずれか)
で表わされるシランカップリング系ケイ素化合物、(但
しR1−R1はH,、CH3、CtHs、5i(CHt
)*、いずれか)
であるシラザン系ケイ素化合物、
(但しRは7 /l/キル基、XはCQ、 NHt、で
ある反応性シロキサンオリゴマー系ケイ素化合物、を言
う。代表的なものに、トリメトキシシラン、トリメトキ
シビニルシラン、トリエトキシシラン、トリエトキシビ
ニルシラン、トリメトキシクロルシラン、トリメチルメ
トキシシラン、〜ジメトキシビニルシラン、ジメチルメ
トキシビニルシラン、トリメチルビニルシラン、トリエ
チルビニルシラン、ビニルトリフロロシラン、ヘキサメ
チルジシラザン、ジメチルトリメチルシリルアミン、ア
ミノシロキサン、クロロシロキサン、等がある。an alkoxysilane-based silicon compound represented by any of the following), a chlorosilane-based compound represented by any of the following (30, -cI2, Cl2CH*), where R is an alkyl group, and X is either OCH3 or 0CtHs) A silane coupling silicon compound represented by (where R1-R1 is H, CH3, CtHs, 5i(CHt
) *, any) (where R is a 7/l/kill group, and X is CQ, NHt).Reactive siloxane oligomer silicon compounds that are Methoxysilane, trimethoxyvinylsilane, triethoxysilane, triethoxyvinylsilane, trimethoxychlorosilane, trimethylmethoxysilane, ~dimethoxyvinylsilane, dimethylmethoxyvinylsilane, trimethylvinylsilane, triethylvinylsilane, vinyltrifluorosilane, hexamethyldisilazane, dimethyltrimethylsilylamine , aminosiloxane, chlorosiloxane, etc.
ケイ素化合物をプラズマ装置内に供給する場合、キャリ
アーガスとしてアルゴンチッ素等の不活性ガスと混合し
て使用してもさしつかえないし、さらに緻密な膜を形成
させるために酸素等と混合してもよい。When a silicon compound is supplied into a plasma device, it may be mixed with an inert gas such as argon nitrogen as a carrier gas, or may be mixed with oxygen or the like in order to form a more dense film.
本発明で言うプラズマ重合とは、低温プラズマ放電を利
用した重合法をいい、放電時に重合法モノマーを1種以
上供給しながら重合膜を形成させる方法を言う。Plasma polymerization in the present invention refers to a polymerization method using low-temperature plasma discharge, and refers to a method of forming a polymer film while supplying one or more polymerization monomers during discharge.
低温プラズマとは、放電中に生成されるプラズマが平均
電子エネルギー10eV (lo’〜lO’K) 、電
子密度1G”〜1G”am−’で特徴づけられると同時
に、電子温度とガス温度との間に平衡が成立しない故に
非平衡プラズマとも言われる。Low-temperature plasma is a plasma generated during discharge that is characterized by an average electron energy of 10 eV (lo'~lO'K) and an electron density of 1 G''~1 G''am-', and at the same time, the plasma generated during discharge is characterized by a change in electron temperature and gas temperature. It is also called non-equilibrium plasma because no equilibrium is established between the two.
プラズマ重合を行う装置としては特に制約がな(、連続
式、バッチ式、内部電極式、外部74極式いずれでも良
い。There are no particular restrictions on the apparatus for plasma polymerization (it may be a continuous type, a batch type, an internal electrode type, or an external 74-electrode type).
通常放電時の真空度はO,O1= 0.5Torr程度
に保たれ、出力はO,1w/c+i”〜5w/aI11
”程度である。処理時間は数秒〜数分が一般的であり、
膜厚を0.03〜05μ程度にすることが望ましい。膜
厚が0.03μ以下だとエレクトレット効果が少なく、
膜厚が0.5μをこえると膜自体が硬くもろくなる傾向
にあり望ましくない。Normally, the degree of vacuum during discharge is kept at about O, O1 = 0.5 Torr, and the output is O,1w/c+i''~5w/aI11
"Processing time is generally several seconds to several minutes,
It is desirable that the film thickness is about 0.03 to 0.05 μm. If the film thickness is less than 0.03μ, the electret effect will be small;
If the film thickness exceeds 0.5μ, the film itself tends to become hard and brittle, which is not desirable.
膜厚の測定はスライドガラス上にカバーグラスをおいた
ものを、プラズマ処理装置のサンプルをセットした電極
上におき、プラズマ、重合後カバーグラスを除去し、ス
ライドグラスにできた段差を干渉顕微鏡により測定する
。To measure the film thickness, place a cover glass on a slide glass and place it on the electrode set with the sample in the plasma processing device. After plasma and polymerization, remove the cover glass and examine the steps created on the slide glass using an interference microscope. Measure.
エレクトレット化はプラズマ薄膜をエレクトレット化す
るものであり、高分子シートの両面にプラズマ薄膜が存
在する場合は、両面を同極性にエレクトレット化しても
、異極性にエレクトレット化してもよ(、さらに−面の
みをエレクトレット化してもよい。また高分子シートの
一表面のみにプラズマ薄膜が存在す、る場合はその薄膜
をエレクトレット化する。Electretization is the process of converting a plasma thin film into an electret. When plasma thin films exist on both sides of a polymer sheet, both sides can be made into electrets with the same polarity or with different polarities (and even with negative polarity). Alternatively, if a plasma thin film exists only on one surface of the polymer sheet, that thin film may be made into an electret.
エレクトレット化する装置は通常のもので良い。An ordinary device may be used for electretization.
すなわち数十kvの高電圧を発生させる直流電源と、試
料が接触するロール状電極(適状アースされる)と対電
極(針状電極)よりな条装置で行われる。That is, it is carried out using a DC power source that generates a high voltage of several tens of kilovolts, a strip device that includes a rolled electrode (suitably grounded) with which the sample comes into contact, and a counter electrode (needle electrode).
エレクトレット化の効率を上げるためにロールは加熱で
きるようになっているものが良い。また簡便タイプとし
て、コロナ放電が行われる装置でもよい。In order to increase the efficiency of electretization, it is preferable that the roll be heated. Alternatively, as a simple type, a device that performs corona discharge may be used.
エレクトレットの程度は、被処理物と電圧、処理速度、
電極間距−、ロール温度により任意に選択できるが、高
電圧をかけすぎると、シートが破れたり溶融したりする
ので注意が必要である。エレクトレット化の程度として
は、表面電荷密度としてlXl0″10c/cl!以上
好ましくは3X 1G−10c/c+a’が好ましい。The degree of electret depends on the processed material, voltage, processing speed,
The distance between the electrodes can be arbitrarily selected depending on the roll temperature, but care must be taken since applying too high a voltage may cause the sheet to tear or melt. The degree of electretization is preferably 1X10''10c/cl! or more as a surface charge density, preferably 3X1G-10c/c+a'.
表面電荷密度の測定は第1図の方法により行なった。試
料lをアースした金属板2上に置き、他の金属電極板(
4cm径)3を上方から試料lに接触させて、試料電荷
を金属電極板3に誘導させて、それを既知コンデンサー
4にためて、コンデンサー4の電位を電位計5で測定す
る。The surface charge density was measured by the method shown in FIG. Place the sample 1 on the grounded metal plate 2, and place it on the other metal electrode plate (
(4 cm diameter) 3 is brought into contact with the sample 1 from above to induce sample charge to the metal electrode plate 3, which is stored in a known capacitor 4, and the potential of the capacitor 4 is measured with an electrometer 5.
表面電荷密度(c/am’) = Cx V x SC
:コンデンサー容量(ファラッド)
■=電圧(ボルト)
S:金属電極板面接(am”)
以下実施例にしたがって説明する。Surface charge density (c/am') = Cx V x SC
: Capacitance of capacitor (Farad) ■ = Voltage (Volt) S: Surface of metal electrode plate (am'') The following will be explained according to Examples.
実施例1
ポリエチレンテレフタレートからなる2軸延伸フイルム
(厚さlOμ)の両面にC,F、モノマ−30CC/分
の流量で真空度6.3Torr出力0.177)/ca
+”で120秒間プラズマ重合処理を行ない、膜厚O,
tSμの架橋された薄膜を形成させた。Example 1 Both sides of a biaxially stretched film (thickness lOμ) made of polyethylene terephthalate were coated with C, F, and monomers at a flow rate of 30 CC/min and a vacuum level of 6.3 Torr and an output of 0.177)/ca.
+” for 120 seconds, and the film thickness was O,
A crosslinked thin film of tSμ was formed.
高周波電源: 13.56MHz
電極 :平行平板電極
このシートの片面に、50KVの直流電源により■の電
荷をもたせた。High frequency power source: 13.56 MHz Electrode: Parallel plate electrode One side of this sheet was given a charge of 2 by a 50 KV DC power source.
電極開用l1ll 5cm
シートが接する側の電極温度 12 G ’C処理時間
5秒
印加電圧 30KV
次にフィルムを裏返しにし同様の要領で1つの電荷を持
たせるように電源部を一部調整しエレクトレット化した
。Electrode opening l1ll 5cm Electrode temperature on the side in contact with the sheet 12 G 'C Processing time 5 seconds Applied voltage 30KV Next, turn the film over and adjust the power supply part in the same way so that it has one charge and convert it into an electret. did.
比較例としてプラズマ重合処理してないポリエチレンテ
レフタレートフィルムを同様に裏表エレクトレット化し
た。As a comparative example, a polyethylene terephthalate film that had not been subjected to plasma polymerization treatment was similarly made into an electret on both sides.
プラズマ重合薄膜を有するフィルムの表面電荷密度は@
7X 10−@c/c+*’、(96,5X 10−
”c/co+”であり、プラズマ重合処理していないフ
ィルムの表面電荷密度はe5x 10−”c/am”、
θ4X 10−”c/c11”であった。The surface charge density of a film with plasma polymerized thin film is @
7X 10-@c/c+*', (96,5X 10-
"c/co+", and the surface charge density of the film not subjected to plasma polymerization treatment is e5x 10-"c/am",
θ4X 10-"c/c11".
プラズマ重合薄膜のエレクトレット化維持性を調べるた
めに、10 G ’Cの雰囲気中に100時間入れてお
いた後表面電荷密度を測定したが、Φ6.7x10−’
c/cm”、e 6.4X 10−”c/cm”と初期
性能を維持していた。In order to investigate the retention of electretization of the plasma polymerized thin film, the surface charge density was measured after it was placed in a 10 G'C atmosphere for 100 hours.
c/cm", e 6.4X 10-"c/cm", maintaining the initial performance.
実施例2
ポリエチレンテレフタレートの50デニール96フイラ
メントよりなる延伸糸をタテ糸、ココ糸に用い高密度タ
ック織物を繊った。この織物を糊抜き−精練−プリセッ
ト(tgo℃1分間)−染色−仕上と従来の工程を通し
た。Example 2 A high-density tuck fabric was woven using drawn yarns made of 50 denier 96 filaments of polyethylene terephthalate as warp yarns and coco yarns. The fabric was subjected to the conventional steps of desizing-scouring-presetting (TGO°C for 1 minute)-dying-finishing.
この織物をビニルトリメトキシシランモノマーによりプ
ラズマ重合薄膜を一表面に施こした。A plasma polymerized thin film was applied to one surface of this fabric using vinyltrimethoxysilane monomer.
プラズマ重合条件、装置は実施例1と同様のものを使用
した。この時の膜厚は0.12μであった。The same plasma polymerization conditions and equipment as in Example 1 were used. The film thickness at this time was 0.12μ.
この織物を実施例1と同様の条件でエレクトレット化し
た。エレクトレット化とはプラズマ重合表面のみとし、
■の電荷をもたせた。This fabric was made into an electret under the same conditions as in Example 1. Electretization refers to only the plasma polymerized surface.
It was given a charge of ■.
この織物を使用し、防塵衣を作成した。エレクトレット
化した面が外側(体にされらない面)になるように服を
作った。対照にプラズマ重合処理をしてい゛ない織物を
使い同様にエレクトレット化防塵衣を作成した。
−これらの服を着て1時間デスクワークを
した時の体からの発塵量をはだかで行なった場合と比較
して調べた。発しん量は、はだかでデスクワークした時
をlOOとすると、プラズマ重合処理せスニエレクトレ
ット化した服を着用した場合がlol プラズマ重合処
理してエレクトレット化した服を着用した場合が2、と
著しくからだからの発塵量を ゛おさえることができた
。Dustproof clothing was made using this fabric. The clothes were made so that the electret side was on the outside (the side that was not attached to the body). As a control, electret dustproof clothing was similarly prepared using a fabric that had not been subjected to plasma polymerization treatment.
-We investigated the amount of dust emitted from the body when working at a desk for an hour wearing these clothes, compared to when doing it naked. The amount of rash produced when working at a desk naked is 100, and when wearing clothes made of plasma polymerized electret, it is 2.0 when wearing clothes made of electret treated by plasma polymerization. We were able to suppress the amount of dust generated.
第1図は表面電荷密度の測定を行なうための説明図であ
る。
特許出願人 株式会社 り ラ し
代 理 人 弁理士 本多 堅FIG. 1 is an explanatory diagram for measuring surface charge density. Patent applicant: Rira Co., Ltd. Agent: Ken Honda, patent attorney
Claims (1)
合物又はフッ素系化合物よりなる膜厚0.03〜0.5
μの架橋構造膜を有し、該薄膜がエレクトレット化して
いることを特徴とする高分子シート状物。 2 高分子シートの少なくとも片面の表面にプラズマ重
合によりシラン系化合物又はフッ素系化合物を用いて架
橋構造膜を形成させ、その膜厚を0.03〜0.5μと
し、その後直流の高電圧電源により該薄膜をエレクトレ
ット化することを特徴とする高分子シート状物の製造方
法。[Claims] 1. A film made of a silane compound or a fluorine compound on at least one surface of the polymer sheet with a thickness of 0.03 to 0.5
1. A polymer sheet-like material having a crosslinked structure film of μ, the thin film being an electret. 2. A crosslinked structure film is formed on at least one surface of the polymer sheet using a silane compound or a fluorine compound by plasma polymerization, and the film thickness is set to 0.03 to 0.5μ, and then a high voltage DC power source is used to form a crosslinked structure film on at least one surface of the polymer sheet. A method for producing a polymer sheet, which comprises converting the thin film into an electret.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63058805A JPH01232038A (en) | 1988-03-11 | 1988-03-11 | Electret polymer sheet like article and preparation thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63058805A JPH01232038A (en) | 1988-03-11 | 1988-03-11 | Electret polymer sheet like article and preparation thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01232038A true JPH01232038A (en) | 1989-09-18 |
Family
ID=13094813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63058805A Pending JPH01232038A (en) | 1988-03-11 | 1988-03-11 | Electret polymer sheet like article and preparation thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01232038A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0523503A2 (en) * | 1991-07-15 | 1993-01-20 | Matsushita Electric Industrial Co., Ltd. | Ultra thin polymer film electret and method of manufacturing the same |
US6397458B1 (en) | 1998-07-02 | 2002-06-04 | 3M Innovative Properties Company | Method of making an electret article by transferring fluorine to the article from a gaseous phase |
US6419871B1 (en) * | 2000-05-25 | 2002-07-16 | Transweb, Llc. | Plasma treatment of filter media |
US6524360B2 (en) | 2000-02-15 | 2003-02-25 | Hollingsworth & Vose Company | Melt blown composite HEPA filter media and vacuum bag |
US7244291B2 (en) * | 2005-05-02 | 2007-07-17 | 3M Innovative Properties Company | Electret article having high fluorosaturation ratio |
US7244292B2 (en) * | 2005-05-02 | 2007-07-17 | 3M Innovative Properties Company | Electret article having heteroatoms and low fluorosaturation ratio |
-
1988
- 1988-03-11 JP JP63058805A patent/JPH01232038A/en active Pending
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0523503A2 (en) * | 1991-07-15 | 1993-01-20 | Matsushita Electric Industrial Co., Ltd. | Ultra thin polymer film electret and method of manufacturing the same |
EP0523503A3 (en) * | 1991-07-15 | 1994-02-16 | Matsushita Electric Ind Co Ltd | |
US6562112B2 (en) * | 1998-07-02 | 2003-05-13 | 3M Innovative Properties Company | Fluorinated electret |
US6660210B2 (en) | 1998-07-02 | 2003-12-09 | 3M Innovative Properties Company | Method of making fluorinated electrets |
US6409806B1 (en) | 1998-07-02 | 2002-06-25 | 3M Innovative Properties Company | Fluorinated electret |
US6953544B2 (en) * | 1998-07-02 | 2005-10-11 | 3M Innovative Properties Company | Method of making a respirator that has a fluorinated electret |
US6432175B1 (en) | 1998-07-02 | 2002-08-13 | 3M Innovative Properties Company | Fluorinated electret |
US6808551B2 (en) * | 1998-07-02 | 2004-10-26 | 3M Innovative Properties Company | Method of using fluorinated electrets |
US6397458B1 (en) | 1998-07-02 | 2002-06-04 | 3M Innovative Properties Company | Method of making an electret article by transferring fluorine to the article from a gaseous phase |
US6398847B1 (en) | 1998-07-02 | 2002-06-04 | 3M Innovative Properties Company | Method of removing contaminants from an aerosol using a new electret article |
US6524360B2 (en) | 2000-02-15 | 2003-02-25 | Hollingsworth & Vose Company | Melt blown composite HEPA filter media and vacuum bag |
US6419871B1 (en) * | 2000-05-25 | 2002-07-16 | Transweb, Llc. | Plasma treatment of filter media |
US7244291B2 (en) * | 2005-05-02 | 2007-07-17 | 3M Innovative Properties Company | Electret article having high fluorosaturation ratio |
US7244292B2 (en) * | 2005-05-02 | 2007-07-17 | 3M Innovative Properties Company | Electret article having heteroatoms and low fluorosaturation ratio |
JP2008540856A (en) * | 2005-05-02 | 2008-11-20 | スリーエム イノベイティブ プロパティズ カンパニー | Electret articles having a high fluoro saturation ratio |
JP2008540855A (en) * | 2005-05-02 | 2008-11-20 | スリーエム イノベイティブ プロパティズ カンパニー | Electret articles having heteroatoms and low fluoro saturation |
JP4944100B2 (en) * | 2005-05-02 | 2012-05-30 | スリーエム イノベイティブ プロパティズ カンパニー | Electret articles having a high fluoro saturation ratio |
JP4944099B2 (en) * | 2005-05-02 | 2012-05-30 | スリーエム イノベイティブ プロパティズ カンパニー | Electret articles having heteroatoms and low fluoro saturation |
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