JPH01231077A - Fixing device and recorder - Google Patents
Fixing device and recorderInfo
- Publication number
- JPH01231077A JPH01231077A JP5609888A JP5609888A JPH01231077A JP H01231077 A JPH01231077 A JP H01231077A JP 5609888 A JP5609888 A JP 5609888A JP 5609888 A JP5609888 A JP 5609888A JP H01231077 A JPH01231077 A JP H01231077A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- fixing device
- fixing
- conductive
- substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 19
- 239000002131 composite material Substances 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 21
- 239000000126 substance Substances 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 10
- 230000003287 optical effect Effects 0.000 abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 4
- 239000004020 conductor Substances 0.000 abstract description 3
- 230000035699 permeability Effects 0.000 abstract description 3
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 2
- 238000004904 shortening Methods 0.000 abstract description 2
- 238000001179 sorption measurement Methods 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 description 17
- 239000007789 gas Substances 0.000 description 9
- 238000000465 moulding Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005245 sintering Methods 0.000 description 6
- 238000005121 nitriding Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- -1 TiC9ZrN Chemical compound 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 241001459693 Dipterocarpus zeylanicus Species 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004533 TaB2 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910033181 TiB2 Inorganic materials 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- 229910007948 ZrB2 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 229940126214 compound 3 Drugs 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 229920000548 poly(silane) polymer Chemical class 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000001454 recorded image Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229940082569 selenite Drugs 0.000 description 1
- MCAHWIHFGHIESP-UHFFFAOYSA-L selenite(2-) Chemical compound [O-][Se]([O-])=O MCAHWIHFGHIESP-UHFFFAOYSA-L 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G15/00—Apparatus for electrographic processes using a charge pattern
- G03G15/20—Apparatus for electrographic processes using a charge pattern for fixing, e.g. by using heat
- G03G15/2003—Apparatus for electrographic processes using a charge pattern for fixing, e.g. by using heat using heat
- G03G15/2014—Apparatus for electrographic processes using a charge pattern for fixing, e.g. by using heat using heat using contact heat
- G03G15/2053—Structural details of heat elements, e.g. structure of roller or belt, eddy current, induction heating
- G03G15/2057—Structural details of heat elements, e.g. structure of roller or belt, eddy current, induction heating relating to the chemical composition of the heat element and layers thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Fixing For Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、窒素反応結合セラミックス例えば高強度Si
3N+結合SiCを利用した。電子写真及び光プリンタ
、静電プリンタ、磁気プリンタ等の定着装置と、それを
利用した電子写真及び光プリンタ、静電プリンタ、磁気
プリンタ等の装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to nitrogen reaction bonded ceramics such as high-strength Si
3N+ bonded SiC was utilized. The present invention relates to fixing devices for electrophotographic and optical printers, electrostatic printers, magnetic printers, etc., and devices using the same, such as electrophotographic and optical printers, electrostatic printers, and magnetic printers.
従来、電子写真、光プリンタ、静電プリンタ。 Conventional, electrophotographic, optical printer, electrostatic printer.
磁気プリンタ等、トナーによる現像プロセスを供なうト
ナーの定着プロセスは通常加熱ロールによる定着方式が
採用されている。その主なものは、アルミドラムにシリ
コン、テフロン等のコーテイングを行ない、このアルミ
ドラムの内部よりハロゲンランプによる瞬間加熱装置に
よる間接的加熱方式が採用されているもの、あるいは[
電子写真用直接加熱セラミックヒートロール」電子写真
学会第59回研究i、を地金(87年度)予稿p】14
〜p118に堤案されたものとしてセラミックにプラズ
マ溶射により抵抗体を形成し、これに直接電流を印加し
、発熱させ、この表面に絶縁膜を設は直接ドラムを加熱
するもの等がある。2. Description of the Related Art A toner fixing process that involves a toner development process in magnetic printers and the like usually employs a fixing method using a heating roll. The main types are those in which an aluminum drum is coated with silicone, Teflon, etc., and an indirect heating method is adopted from inside the aluminum drum using an instantaneous heating device using a halogen lamp, or [
``Direct heating ceramic heat roll for electrophotography'' Electrophotography Society 59th Research I, Bullion (1987) Proceedings p] 14
As proposed on page 118, a resistor is formed on ceramic by plasma spraying, a current is directly applied to the resistor to generate heat, and an insulating film is provided on the surface of the resistor to directly heat the drum.
上記の2つの従来技術について更に詳細に検討すると、
前音は間接加熱でありハロゲンランプの光は軸受部分か
ら外部に洩れ、感光体に悪い影響を与えるので構造上の
配慮が必要など装置を複雑化し、またアルミドラl、白
身強度に耐えるため薄さの制限があり熱容量も大きく、
発熱立上り時定数が短かくならないという欠点を有して
いる。Considering the above two conventional technologies in more detail,
The front sound is indirect heating, and the light from the halogen lamp leaks to the outside from the bearing part, which has a negative effect on the photoreceptor, so structural considerations are required, making the device complicated. has a large heat capacity,
It has the disadvantage that the heat generation rise time constant cannot be shortened.
また、後者も間接加熱から直接加熱となるため熱時定数
の向上が期待できるが、母材は金属のパイプであり、ま
た結合材、絶録材、抵抗体など複数の層状構造となって
いるため複3イ[である。In addition, the latter is also expected to improve the thermal time constant because it changes from indirect heating to direct heating, but the base material is a metal pipe and has a multi-layered structure including binding material, insulation material, and resistor. Tame compound 3 I [is.
定着ドラムとしての性質は、第1に速やかな加熱、即ち
熱時定数を短かくすることで、第2は、均一な定着性と
その1〜ナーとの剥離性の良好なこと、第3は、熱損失
が少なく熱効率が高いこと、第4は、電子写真プロセス
に余分な輻射、あるいは物理化学的悪影響を与えないこ
となどが必要となるが、現状は、低速、中速、高速など
色々な電子写真あるいは、各種トナープロセスなど、ト
ナ一定着プロセスを含む各種工程において十分満足なも
のとは言い難い状況である。The properties of the fixing drum are: firstly, rapid heating, that is, shortening the thermal time constant; secondly, uniform fixing properties and good releasability from the toner; and thirdly, , low heat loss and high thermal efficiency, and fourthly, it is necessary to avoid unnecessary radiation or adverse physical and chemical effects on the electrophotographic process. The situation is far from satisfactory in various processes including toner fixation processes, such as electrophotography and various toner processes.
本発明の目的は定着に必要なi+13記4つの性質に関
し、熱時定数も短かく、また剥離性が良好で、熱効率も
高く、また各種電子写真、光プリンタ記録、静電記録、
磁気記録など1〜ナープロセスを含む各種プロセスに物
理化学的悪影響を与えろこともなく、各種プロセス速度
に上背耐用性を持つ新たな定着装置及びその応用装置を
提供することにある。The purpose of the present invention is to have a short thermal time constant, good releasability, high thermal efficiency, and various types of electrophotography, optical printer recording, electrostatic recording, etc., regarding the four properties necessary for fixing.
It is an object of the present invention to provide a new fixing device and an application device thereof that have durability at various process speeds without having any adverse physicochemical effects on various processes including 1-ner processes such as magnetic recording.
上記、電子写真、光プリンタ、静電記録、磁気記録など
、各種のトナープロセスにおける定着手段において、定
着の4つの基本的性質を満足するために窒素・反応結合
セラミック例えばSi3N4結合SiCセラミックス複
合体を母材とする材を刊本構体とするセラミックスを使
えば、定着に必要なドラム、あるいはドラム以外の複雑
な形状も作ることが可能で強度も強<350MPa以上
の曲げ強度を持ち、更に寸法精度の極めて良好な定着構
造物を作ることができる。このセラミックスの焼結時の
寸法変化率は0.13%以下で、従来のセラミックス材
では作り得ない定着構造物を作り得る。In the fixing means in various toner processes such as electrophotography, optical printers, electrostatic recording, and magnetic recording, nitrogen/reactive bonded ceramics such as Si3N4 bonded SiC ceramic composites are used to satisfy the four basic properties of fixing. By using ceramics whose base material is the book structure, it is possible to make drums necessary for fixing, or complex shapes other than drums, and it has a bending strength of over 350 MPa, and it also has a high dimensional accuracy. A very good anchoring structure can be made. The dimensional change rate of this ceramic during sintering is 0.13% or less, and it is possible to create a fixing structure that cannot be created with conventional ceramic materials.
また導電粒子を必要に応じて353N4で結合すれば、
導電セラミックとなり先の構造物の表面に一体焼結すれ
ば良好な導電被膜となり、強力な定着用被眼を得ること
ができる。また熱膨張係数が2 、9 X 10−6/
’Cと小さいため、急速な温度上昇にも耐え、定着立上
り時定数を大幅に短縮できる。Also, if conductive particles are bonded with 353N4 as necessary,
If it becomes a conductive ceramic and is integrally sintered onto the surface of the structure, it becomes a good conductive coating and a strong fixing coating can be obtained. Also, the coefficient of thermal expansion is 2,9 x 10-6/
Because it is as small as 'C, it can withstand rapid temperature rises and can significantly shorten the fixing start-up time constant.
また熱効率も、母体となる構体の熱拡散係数が9.77
X 10−8/’Cと金属よりはるかに小さいため不
要な部分へ熱の拡散をしないため表面導電層を効率良く
加熱できる。この焼結体はN2 (窒素)雰囲気中で
作る以前に成形用樹脂剤が適正量添加されるため導電処
理膜が形成される場合にも″須焼゛′の状態に近く微細
な多孔性及び含浸性の優れた性質を保持している。従っ
て、定着用の離形性剤としての油性物質、シリコン系、
フ化物系物質等との親和性を確保することができる。In addition, regarding thermal efficiency, the thermal diffusion coefficient of the base structure is 9.77.
X 10-8/'C, which is much smaller than metals, prevents heat from diffusing to unnecessary parts, allowing efficient heating of the surface conductive layer. Since this sintered body is made in an N2 (nitrogen) atmosphere, an appropriate amount of molding resin is added to it, so even when a conductive treatment film is formed, it is close to a "sintered" state and has fine porosity and It maintains excellent impregnating properties.Therefore, it can be used as a releasing agent for fixing, such as oil-based substances, silicone-based substances,
Compatibility with fluoride substances etc. can be ensured.
また、焼結された窒素反応セラミックスSj 3N4結
合SiCは極めて化学的にも安定で、耐熱、耐酸化性も
優れ、それ自身変質も少なく、トナープロセスに有害物
質も出すこともなく、また特別な高温部を持たないため
、余分な放射束を発生することもない。In addition, the sintered nitrogen-reactive ceramic Sj 3N4 bonded SiC is extremely chemically stable, has excellent heat resistance and oxidation resistance, has little deterioration, does not emit harmful substances in the toner process, and has special properties. Since it does not have a high temperature part, it does not generate excess radiant flux.
以上述べたように本材料を使った定着装置は。As mentioned above, the fixing device using this material.
従来より考えられる理想に近い定=着構体を提供できる
ものである。It is possible to provide a fixed structure that is close to the ideal conventionally considered.
更に、本発明の窒素反応結合セラミック複合体について
詳細述べる。Further, the nitrogen reaction bonded ceramic composite of the present invention will be described in detail.
本セラミックス複合体は、電気抵抗率の異なるセラミッ
クスを一体成形、一体焼結し、金属SiまたはフェロS
jから生成した5iaN4,5i2NzO。This ceramic composite is made by integrally molding and sintering ceramics with different electrical resistivities, and is made of metal Si or ferro S.
5iaN4,5i2NzO produced from j.
5iOzの少なくとも1種の粒子またはウィスカで結合
したものである。5iOz bound by at least one particle or whisker.
本セラミックス複合体は、隣り合うセラミックスの電気
抵抗率が異なり、電気抵抗率を変えるための導電性化合
物は非酸化物系の導電材であり、LHa、IVa、Va
、 ■al■族の窒化物、炭化物。In this ceramic composite, adjacent ceramics have different electrical resistivities, and the conductive compound for changing the electrical resistivity is a non-oxide conductive material, including LHa, IVa, and Va.
, ■al■ group nitrides and carbides.
ホウ化物、ケイ化物であり、特にTiN、TiC。Borides, silicides, especially TiN, TiC.
TiB2.TiSi2.ZrN、ZrC,ZrB2゜Z
r5iz、HfN、l−1fC,TaN、TaC。TiB2. TiSi2. ZrN, ZrC, ZrB2゜Z
r5iz, HfN, l-1fC, TaN, TaC.
Ta B2.Ta S iz、MO2N、MO2C,M
OB。TaB2. Ta S iz, MO2N, MO2C, M
OB.
Cr2N、Cr3C2,CrB、Cr5iz、NbN。Cr2N, Cr3C2, CrB, Cr5iz, NbN.
NbC,Nb5iz、VN、VC,WC,WSizが主
に用いられる。NbC, Nb5iz, VN, VC, WC, and WSiz are mainly used.
特に、TiN、TiC9ZrN、ZrC。In particular, TiN, TiC9ZrN, ZrC.
Cr 2N 、 Cr 3C2は耐酸化性に優れており
好適である。Cr 2N and Cr 3C2 have excellent oxidation resistance and are suitable.
また、電気抵抗率を小さくするための焼結体中の導電性
粒子の含有量は80■oQ%以下とするのが好ましい。Further, the content of conductive particles in the sintered body to reduce the electrical resistivity is preferably 80 oQ% or less.
なぜなら80voQ%より多くなるとセラミックスの機
械的強度、耐熱衝撃性、耐酸化性などの特性が低下する
からである。This is because when the content exceeds 80 voQ%, the properties such as mechanical strength, thermal shock resistance, and oxidation resistance of the ceramic deteriorate.
さらに、焼結体の電気抵抗率は、焼結体中の導電性粒子
を5〜80vo(1%と変化させることにより、任意に
変化させることができる。また、電気絶縁性粒子を焼結
体中に含有させることにより。Furthermore, the electrical resistivity of the sintered body can be arbitrarily changed by changing the conductive particles in the sintered body from 5 to 80vo (1%). By containing it inside.
1014Ω■から10−5Ω艶の範囲で任意に作製でき
る。It can be produced arbitrarily within the range of 1014 Ω■ to 10 −5 Ω luster.
本セラミックス複合体は、金属SiまたはフェロSiか
ら生成したS i 3N4. S i 2N20.S
i 02の少なくとも一種で導電性粒子または絶縁性粒
子を結合したもので、焼結時の体積変化率が小さく、変
形もない。また、電気抵抗率の異なる層の2層間を金属
SiまたはフェロSiから生成した5iaN4.S 1
2Nz○、またはSiO2で結合されており、結合界面
は母体と同様に耐熱、耐熱仕j撃性に優れている。This ceramic composite is S i 3N4. produced from metallic Si or ferro-Si. S i 2N20. S
It is made by combining conductive particles or insulating particles with at least one type of i02, and the volume change rate during sintering is small and there is no deformation. In addition, 5iaN4.2 made of metal Si or ferro-Si is used between two layers having different electrical resistivities. S1
It is bonded with 2Nz○ or SiO2, and the bonding interface has excellent heat resistance and heat attack resistance like the base material.
本焼結体は、その気孔率を5〜40%とするのが好まし
い。気孔率が40%を越えると機械的強度が低下すると
共に抵抗率を小さくするのが困難である。また気孔率が
5%より小さいと金属Si、またはフェロSiが反応す
るための窒化性ガスや酸化性ガスなどの通気抵抗が大き
くなり良好な焼結体を得ることが難しい。なぜなら導電
性化合物や絶縁性化合物と金属SiまたはフェロSiが
窒化性ガスや酸化性ガスなどと反応して5iaN+。It is preferable that the sintered body has a porosity of 5 to 40%. When the porosity exceeds 40%, the mechanical strength decreases and it is difficult to reduce the resistivity. Furthermore, if the porosity is less than 5%, the resistance to ventilation of nitriding gas, oxidizing gas, etc. due to reaction of metal Si or ferro-Si increases, making it difficult to obtain a good sintered body. This is because a conductive compound or an insulating compound and metal Si or ferro-Si react with a nitriding gas or an oxidizing gas to form 5 iaN+.
SiO2,または5izNz○相に変化させMi性化合
物や導電性化合物を結合するために、上記のガスが成形
体中を通過する通気孔が必要である。In order to convert the gas into the SiO2 or 5izNz○ phase and to bond the Mi compound or the conductive compound, vent holes are required for the gas to pass through the molded body.
焼結体中に気孔を5〜40%存在させることにより電気
抵抗率の異なるセラミックスの各層の熱膨張係数の違い
による応力を緩和するので焼結体のクラック発生を防止
できる。By allowing 5 to 40% of pores to exist in the sintered body, stress caused by differences in thermal expansion coefficients of the ceramic layers having different electrical resistivities is alleviated, thereby preventing cracks in the sintered body.
また、金JiSiまたはフェロSiの平均粒径を5μm
以下とするのが好ましい。なぜなら、平均粒径が5μm
よりも大きくなると窒化時間が長くなると共に残留Si
が存在するようになるからである。In addition, the average particle size of gold JiSi or ferro-Si was 5 μm.
The following is preferable. This is because the average particle size is 5 μm.
If it is larger than , the nitriding time becomes longer and the residual Si
This is because it comes to exist.
以上の複合体の成形用バインダとしては例えばポリビニ
ルブチラールやポリエチレンなどの熱可塑性樹脂物や、
シリコンイミド化合物やポリシラン化合物などの有機S
i高分子化合物などが用いられ、その配合量は2〜20
重量部添加し、成形体の相対密度を60%以上とするの
が好ましい。Examples of binders for molding the above composites include thermoplastic resins such as polyvinyl butyral and polyethylene;
Organic S such as silicon imide compounds and polysilane compounds
i high molecular compounds etc. are used, and the blending amount is 2 to 20
It is preferable to add it in parts by weight so that the relative density of the molded product is 60% or more.
また、成形体は窒素、アンモニア、酸素(必要に応じて
水素、アルゴン、ヘリウム、−酸化炭素などのガスを加
える)などの窒化性、酸化性、酸窒化性ガス雰囲気で少
なくとも1350℃まで加熱する。In addition, the compact is heated to at least 1350°C in a nitriding, oxidizing, or oxynitriding gas atmosphere such as nitrogen, ammonia, or oxygen (add gases such as hydrogen, argon, helium, or carbon oxide as necessary). .
前記金属Si、フェロSi、絶縁性化合物および導電性
化合物は市販のものをそのまま用いることができる。な
お、ミルなどにより枠砕し、丸みを帯びた粒子を使用す
るのがより好ましい。As the metal Si, ferro-Si, insulating compound, and conductive compound, commercially available ones can be used as they are. Note that it is more preferable to use rounded particles obtained by crushing the particles using a mill or the like.
予めウィスカを原料に混合1分散させた場合は、全ての
ウィスカが粒子と結合されず、塊状のウィスカや単独で
存在するウィスカが焼結体粒子間に残る。これに対し本
複合体は粒子間の空隙を成形体中の粒子から生成した多
数の針状のウィスカがほぼ真直ぐに交差することにより
結合し、耐熱衝撃性、高強度に゛大きく寄与する。When whiskers are mixed and dispersed in the raw material in advance, not all of the whiskers are combined with the particles, and lumpy whiskers or individual whiskers remain between the particles of the sintered body. On the other hand, in the present composite, the voids between the particles are bonded together by a large number of needle-like whiskers generated from the particles in the molded body, which intersect almost straight, which greatly contributes to the thermal shock resistance and high strength.
このセラミックスによれば、絶縁性化合物および導電性
化合物の粒子及び/又はウィスカ間の空隙を、成形体中
のSi粒子から生成した多数のウィスカにより3次元的
に結合されており、結合状態でないウィスカがほとんど
存在しないので高じん性、高温強度の優れた焼結体が得
られる。According to this ceramic, the gaps between the particles and/or whiskers of the insulating compound and the conductive compound are three-dimensionally bonded by a large number of whiskers generated from the Si particles in the molded body, and the whiskers that are not in a bonded state are Since there is almost no carbon, a sintered body with excellent toughness and high-temperature strength can be obtained.
前記絶縁性化合物および導電性化合物の粒子の平均粒径
は、100μm以下とするのが好ましい。The average particle size of the particles of the insulating compound and the conductive compound is preferably 100 μm or less.
なぜなら100μmより大きくなると焼結体の強度を低
ドさせる。また絶縁性化合物および導電性化合物の既製
のウィスカを用いるときは、平均アスペクト比2〜50
.長さ0.2〜100μm が好ましい。アスペクト比
が2未満、長さが0.2μm未満だとウィスカとしての
効果がないし、またアスペク1へ比が50を超え、長さ
が100μm超えると原料の混合が難しく、分散性が悪
くなる。This is because when the thickness exceeds 100 μm, the strength of the sintered body decreases. Also, when using ready-made whiskers of insulating and conductive compounds, the average aspect ratio is 2 to 50.
.. The length is preferably 0.2 to 100 μm. If the aspect ratio is less than 2 and the length is less than 0.2 μm, there will be no effect as a whisker, and if the aspect ratio is more than 50 and the length is more than 100 μm, it will be difficult to mix the raw materials and the dispersibility will be poor.
なぜならば、焼結体中の生成粒子およびウィスカに対し
てウィスカが1〜70voQ%(好ましくは10〜30
voΩ%)含まれる複合セラミックスでは、上記範囲外
では効果が得られないからである。This is because whiskers account for 1 to 70 voQ% (preferably 10 to 30 voQ%) of the generated particles and whiskers in the sintered body.
This is because the effect cannot be obtained with the composite ceramics containing voΩ%) outside the above range.
成形方法は、射出成形、鋳込み成形、ラバープレス成形
、押出し成形2金型成形など形状と要求特性に応じて成
形方法を選択する。The molding method is selected depending on the shape and required characteristics, such as injection molding, cast molding, rubber press molding, extrusion molding, or two-mold molding.
この成形体から成形助剤等を除去させた後、ウィスカ生
成熱処理を行う。生成する粒子またはウィスカは、5i
aN+が最も好ましい。After removing molding aids and the like from this molded body, whisker generation heat treatment is performed. The particles or whiskers produced are 5i
aN+ is most preferred.
本複合セラミックスにおいて、導電性化合物のうちケイ
化物、ホウ化物は窒化性ガス中において窒素と反応する
ために、焼結時間が不適切であると焼結体にクラックが
入りやすいので、窒化物。In this composite ceramic, among the conductive compounds, silicides and borides react with nitrogen in nitriding gas, so if the sintering time is inappropriate, cracks tend to occur in the sintered body, so nitrides are used.
炭化物を用いるのが最も好ましい。Most preferably, carbides are used.
本複合セラミックスにおいて生成するウィスカは、Si
粒子から生成するウィスカ以外に、原料として5iaN
+、SiCなどのウィスカを混合してもよい。但し、多
く混合すると不均質になり好ましくない。また、絶縁性
化合物、導電性化合物にウィスカを使用しても良い。The whiskers generated in this composite ceramic are Si
In addition to whiskers generated from particles, 5iaN is used as a raw material.
+, whiskers such as SiC may be mixed. However, mixing too much will result in non-uniformity, which is not preferable. Further, whiskers may be used as an insulating compound or a conductive compound.
更に、焼結体の気孔率を5%より小さくするために、焼
結した焼結体を再焼結することも可能である。再焼結は
、ホラ+へプレスや熱間静水圧プレスまたは焼結助剤を
利用した常圧による二次焼結が可能である。これにより
、ウィスカが焼結体中に3次元に存在するため高熱性の
セラミックス複合体カ得られる。但し、熱膨張係数の差
をできる限り小さくしないとクラックが入る可能性があ
る。Furthermore, it is also possible to re-sinter the sintered body in order to reduce the porosity of the sintered body to less than 5%. For resintering, secondary sintering can be performed using a hora+he press, hot isostatic press, or normal pressure using a sintering aid. As a result, whiskers exist three-dimensionally in the sintered body, so a highly heat-resistant ceramic composite can be obtained. However, cracks may occur unless the difference in thermal expansion coefficients is made as small as possible.
本発明によV窒素反応セラミックス5iaN4結合Si
C焼結体を使った定着装置及びその応用である電子写真
装置、光プリンタ装置、静電記り装置、磁気プリンタ装
置に於いては、トナープロセス立上り時間の短縮化の均
−化及び、優れた剥離性、熱効率の向上、有害輻射の防
止など理想とする定着装置が提供できると同時にその応
用装置においても、電力の低減、記録画質の向上とその
安定化が達成される。According to the present invention V nitrogen reactive ceramics 5iaN4 bonded Si
In fixing devices using C sintered bodies and their applications such as electrophotographic devices, optical printer devices, electrostatic writing devices, and magnetic printer devices, it is possible to uniformly shorten and improve the toner process start-up time. It is possible to provide an ideal fixing device with improved peelability, improved thermal efficiency, and prevention of harmful radiation, and at the same time, in applied devices, it is possible to reduce power consumption, improve recorded image quality, and stabilize it.
以下、本発明の一実施例を第1図、第2図により説明す
る。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.
第1図において1は、窒素反応結合セラミックスS i
3N4結合SjCセラミックドラム、2はSi3N4結
合導電性セラミック、3は給電のための給電スリップリ
ングである。In FIG. 1, 1 is a nitrogen reaction bonded ceramic S i
3N4 bonded SjC ceramic drum, 2 is Si3N4 bonded conductive ceramic, and 3 is a power supply slip ring for power supply.
本ドラムは、両端が中央部より外径寸法より小形に作ら
れ、その部分迄導電セラミック2を付け、スリップリン
グ3によって外部から電圧が加えられるように構成され
る。This drum is constructed such that both ends are made smaller than the outer diameter than the central part, a conductive ceramic 2 is attached to these parts, and a voltage is applied from the outside by a slip ring 3.
第2図は、別の実施例で、l、2.3の各構成は、第1
図と同じであるが、4の浸透性の離形オイルがドラム内
面に充填しである。この作用は、ドラムを浸透した離形
剤が窒素反応セラミックを通り表面に浸み出し、トナ一
定着に対し離形性を発揮し、トナーの定着時に不要な固
着を定着トラム表面に残さない。FIG. 2 shows another embodiment, in which each configuration of 1 and 2.3 is
It is the same as the figure, but the inner surface of the drum is filled with 4 permeable mold release oil. In this action, the release agent that has permeated the drum passes through the nitrogen-reactive ceramic and seeps out to the surface, exhibiting release properties against fixed toner adhesion, and does not leave unnecessary adhesion on the surface of the fixing tram when toner is fixed.
一般にトナーの定着のとき生ずる定着ドラムへのトナー
の付着は、定着温度が低過ぎて生ずるコールドオフセッ
ト、温度が高いとき生ずる高温オフセントの2つが問題
となるが、この双方の温度差が大きいほど1−ナーを定
着という面で1〜ナー側からいうと良好のトナーと考え
られる。Generally speaking, toner adhesion to the fixing drum that occurs during toner fixation is caused by two problems: cold offset, which occurs when the fixing temperature is too low, and high temperature offset, which occurs when the temperature is high. - From the viewpoint of fixing the toner, it is considered to be a good toner from a 1 to toner side.
これに対し、定着ロール側から見ると離形性の良好な定
着ドラムはこの許容温度範囲を拡大する作用を有し1本
発明によるドラムの浸透性を利用するとこの特性の大幅
な改良になる。On the other hand, when viewed from the fixing roll side, a fixing drum with good release properties has the effect of expanding this permissible temperature range, and if the permeability of the drum according to the present invention is utilized, this property can be greatly improved.
一方、定着ドラム内面からの浸透だけでなく、定着ドラ
ムへの離形剤の塗布も、この浸透性は良好に働き、前記
内面形にも匹適する効果を持つ。On the other hand, this permeability not only permeates from the inner surface of the fixing drum, but also works well when applying the release agent to the fixing drum, and has an effect comparable to the above-mentioned inner surface shape.
更に別の応用として、前記微細多孔性な″類焼″状態の
まま定着ドラムを通常の含浸軸受と同様離形剤で十分含
浸させ、熱定着ロールとして使用すれば、含浸状態が続
く間は外部、又は内部より新たな含浸をすることなくと
もトナーのオフセットの生じない定着が続けられる。In yet another application, if the fixing drum is sufficiently impregnated with a release agent in the microporous "sintered" state and used as a heat fixing roll in the same way as a normal impregnated bearing, the external, Alternatively, fixing without causing toner offset can be continued without new impregnation from the inside.
第3図は、この発明の定着構体をドラム状とした定着ド
ラムを、トナープロセスを含む光プリンタに応用した例
である。FIG. 3 is an example in which a fixing drum having a drum-shaped fixing structure according to the present invention is applied to an optical printer including a toner process.
1は感光ドラム、通常の光プリンタの場合、セレン、セ
レンテルル、有機光電導体(opc)等が利用される。1 is a photosensitive drum, and in the case of a normal optical printer, selenium, selenite, organic photoconductor (OPC), etc. are used.
2の帯電器によって3の正電荷の帯電を行ない′、4の
LEDヘッドにより静電画像を形成し5の現像器によっ
て6の1−ナーにより7の現像トナー像を感光体への上
に得る。8の紙カセットから9給紙ロールにより記録紙
の供給を受は紙ガイド10により転写部11によって記
録紙14の上に転写像を得る。12は第1図或は第2図
の定着ロール及び13の圧着ロールにより熱定着され1
5の定着トナーを得る。記録紙14はトナーの定着後ス
タッカ16に入り一記録工程を完成する。この12の定
着ロールはオフセラ1へ特性が良く、また不要な輻射も
ないので比較的小型装置にもまとめられ、また熱効率も
良く装置の全電力も小さくできる。A charger No. 2 performs positive charging at No. 3, an electrostatic image is formed using an LED head No. 4, and a developed toner image No. 7 is obtained on the photoreceptor by a developing device No. 5 using a one-toner No. 6. . Recording paper is supplied from a paper cassette No. 8 by a paper feed roll No. 9, and a transfer image is obtained on a recording paper 14 by a transfer unit 11 using a paper guide 10. 12 is thermally fixed by the fixing roll shown in FIG. 1 or 2 and the pressure roll 13.
5 fixed toner is obtained. After fixing the toner, the recording paper 14 enters the stacker 16 to complete one recording process. These 12 fixing rolls have good characteristics for the offset roller 1, and since they do not emit unnecessary radiation, they can be assembled into a relatively compact device, and have good thermal efficiency, allowing the total power of the device to be reduced.
本発明によれば、熱時定数が短縮され、また、N i反
応セラミックスに直接反応導体が形成されているため均
一な発熱と、類焼の吸着、浸透特性を利用した離形側効
果を十二分に発揮でき良好な画像が得られ、また熱効率
の高い定着性が得られる。不要な輻射、物理化学作用も
ほとんどないので、装置にまとめる場合の制約も著しく
軽減できる。According to the present invention, the thermal time constant is shortened, and since the reaction conductor is formed directly on the Ni reaction ceramic, uniform heat generation is achieved, and the mold release effect using the adsorption and permeation characteristics of burning is improved. It is possible to obtain good images in minutes, and to obtain fixing properties with high thermal efficiency. Since there is almost no unnecessary radiation or physico-chemical action, the restrictions when integrating into a device can be significantly reduced.
第1図は本発明の実施例を示す定着ドラムを示す図、第
2図は更に離形剤をドラム内に充填した定着ドラムを示
す図、第3図はそれを光プリンタに応用した実施例を示
す図である。
1・・・5iaNn結合SiCセラミックスドラム、2
・・5iaNi結合導電セラミックス、3・・・給電ス
リップリング、4・・・充填した離形性液体。Fig. 1 is a diagram showing a fixing drum showing an embodiment of the present invention, Fig. 2 is a diagram showing a fixing drum further filled with a release agent inside the drum, and Fig. 3 is an example in which the same is applied to an optical printer. FIG. 1...5iaNn bonded SiC ceramic drum, 2
... 5iaNi bonded conductive ceramics, 3... Power supply slip ring, 4... Filled mold release liquid.
Claims (1)
おいて、少なくとも高強度の窒素・反応結合セラミック
ス複合体を構成体とする発熱体を用いることを特徴とし
た熱定着装置。 2、第1項においてセラミック複合体としてSi_3N
_4を構成要素に含む熱定着装置。 3、第1項記載の上記熱定着装置が、ドラム状の形状で
あることを特徴とする定着装置。4、第2項のドラム表
面付近に現像剤の離形性を良くする液状又は固状の離形
性の材料を塗布、吸着、接着、溶着含浸等を行なうこと
を特徴とした定着装置。 5、第1項における発熱体の表面が電気的絶縁層である
ことを特徴とした定着装置。 6、窒素反応結合セラミック複合体の開気孔を利用し、
ドラム内面より液状のトナー離形剤を供給するか又はあ
らかじめ塗布又は含浸したことを特徴とする定着装置。 7、第6項において窒素反応結合セラミックがSi_3
N_4結合SiCにより構成された定着装置。 8、第1項より第6項の定着装置を含むトナー定着装置
を用いたトナープロセスを含む記録装置。[Scope of Claims] 1. A heat fixing device characterized in that a heating element having at least a high-strength nitrogen/reactively bonded ceramic composite is used in a heat fixing step in a toner process such as electrophotography. 2. In item 1, Si_3N is used as a ceramic composite.
A heat fixing device containing _4 as a component. 3. The fixing device according to item 1, wherein the heat fixing device has a drum-like shape. 4. A fixing device characterized by applying, adsorbing, adhering, welding, impregnating, etc. a liquid or solid releasable material that improves the releasability of the developer near the drum surface as described in item 2. 5. The fixing device according to item 1, wherein the surface of the heating element is an electrically insulating layer. 6. Utilizing the open pores of the nitrogen reaction bonded ceramic composite,
A fixing device characterized in that a liquid toner release agent is supplied from the inner surface of the drum, or is coated or impregnated in advance. 7. In item 6, the nitrogen reaction bonded ceramic is Si_3
A fixing device made of N_4 bonded SiC. 8. A recording device including a toner process using a toner fixing device including the fixing device of Items 1 to 6.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63056098A JP2515840B2 (en) | 1988-03-11 | 1988-03-11 | Thermal fixing device |
EP89103889A EP0332105A3 (en) | 1988-03-11 | 1989-03-06 | Fixing device and recording device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63056098A JP2515840B2 (en) | 1988-03-11 | 1988-03-11 | Thermal fixing device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01231077A true JPH01231077A (en) | 1989-09-14 |
JP2515840B2 JP2515840B2 (en) | 1996-07-10 |
Family
ID=13017634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63056098A Expired - Lifetime JP2515840B2 (en) | 1988-03-11 | 1988-03-11 | Thermal fixing device |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0332105A3 (en) |
JP (1) | JP2515840B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0506046A2 (en) * | 1991-03-26 | 1992-09-30 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Fixing device and heat roller therefor |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997006118A1 (en) * | 1995-08-03 | 1997-02-20 | Nimtz Guenter | Electroceramic material with adjustable electric conductivity |
JPH0963749A (en) * | 1995-08-28 | 1997-03-07 | Riken Corp | Heat roller and its manufacture |
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JPS5816273A (en) * | 1981-07-21 | 1983-01-29 | Canon Inc | Fixing device |
JPS6080884A (en) * | 1983-10-11 | 1985-05-08 | Fuji Xerox Co Ltd | Fixing device |
JPS60118868A (en) * | 1983-11-30 | 1985-06-26 | Ricoh Co Ltd | Heat fixing device |
JPS60260077A (en) * | 1984-06-06 | 1985-12-23 | Sumitomo Electric Ind Ltd | Fixing heating roller |
JPS63132975U (en) * | 1987-02-20 | 1988-08-31 |
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DE3107290A1 (en) * | 1980-03-03 | 1982-01-07 | Canon K.K., Tokyo | HEATING DEVICE |
JPS58194074A (en) * | 1982-05-10 | 1983-11-11 | Konishiroku Photo Ind Co Ltd | Fixing device |
JPS58217975A (en) * | 1982-06-14 | 1983-12-19 | Ricoh Co Ltd | Heat fixation device |
JPS58220165A (en) * | 1982-06-16 | 1983-12-21 | Ricoh Co Ltd | Heat fixing device |
JPS60163071A (en) * | 1984-02-06 | 1985-08-24 | Hitachi Ltd | Heat roll fixing device |
-
1988
- 1988-03-11 JP JP63056098A patent/JP2515840B2/en not_active Expired - Lifetime
-
1989
- 1989-03-06 EP EP89103889A patent/EP0332105A3/en not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5816273A (en) * | 1981-07-21 | 1983-01-29 | Canon Inc | Fixing device |
JPS6080884A (en) * | 1983-10-11 | 1985-05-08 | Fuji Xerox Co Ltd | Fixing device |
JPS60118868A (en) * | 1983-11-30 | 1985-06-26 | Ricoh Co Ltd | Heat fixing device |
JPS60260077A (en) * | 1984-06-06 | 1985-12-23 | Sumitomo Electric Ind Ltd | Fixing heating roller |
JPS63132975U (en) * | 1987-02-20 | 1988-08-31 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0506046A2 (en) * | 1991-03-26 | 1992-09-30 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Fixing device and heat roller therefor |
US5286950A (en) * | 1991-03-26 | 1994-02-15 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Fixing device and heat roller therefor |
EP0506046A3 (en) * | 1991-03-26 | 1994-04-13 | Kanegafuchi Chemical Ind | |
US5362943A (en) * | 1991-03-26 | 1994-11-08 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Fixing device and heat roller therefor |
US5420392A (en) * | 1991-03-26 | 1995-05-30 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Fixing device and heat roller therefor |
EP0769731A3 (en) * | 1991-03-26 | 1997-07-16 | Kanegafuchi Chemical Ind | Heat roller for a fixing device |
Also Published As
Publication number | Publication date |
---|---|
EP0332105A3 (en) | 1990-05-30 |
EP0332105A2 (en) | 1989-09-13 |
JP2515840B2 (en) | 1996-07-10 |
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