JPH01229924A - Temperature probe - Google Patents

Temperature probe

Info

Publication number
JPH01229924A
JPH01229924A JP5591088A JP5591088A JPH01229924A JP H01229924 A JPH01229924 A JP H01229924A JP 5591088 A JP5591088 A JP 5591088A JP 5591088 A JP5591088 A JP 5591088A JP H01229924 A JPH01229924 A JP H01229924A
Authority
JP
Japan
Prior art keywords
electrodes
thermistor
substrate
film
thermistor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5591088A
Other languages
Japanese (ja)
Inventor
Tomonobu Suzuki
鈴木 友信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP5591088A priority Critical patent/JPH01229924A/en
Publication of JPH01229924A publication Critical patent/JPH01229924A/en
Pending legal-status Critical Current

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  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Thermistors And Varistors (AREA)

Abstract

PURPOSE:To make connection work efficient by also completing the connection with electrodes simultaneously with the formation of a thermistor film, by forming the thermistor film to the electrodes exposed to the end part of an insulating substrate between the terminal parts thereof. CONSTITUTION:A thermistor material is bonded to the electrodes 5, 6 exposed to the end part of an insulating substrate 1 between the terminal parts thereof by a sputtering method to form a thermistor film 10. At this time, the connection of the thermistor film with the electrodes 5, 6 is also completed simultaneously with the formation of said thermistor film 10 and working efficiency can be improved markedly. Since the thermistor film 10 is bonded not only to the electrodes 5, 6 but also to the substrate 1, sufficient bonding strength can be secured against vibration or a shock. Further, since the outer surface of the thermistor film is covered with a protective film 11 and the electrodes 5, 6 are embedded in the substrate 1, there is no possibility such that moisture or harmful gas penetrates in this probe, and the thermistor film and the electrodes can be perfectly protected even under the severe environment for a temp. measuring part.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は先端にサーミスタを有する温度プローブに関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a temperature probe having a thermistor at its tip.

〔従来技術とその問題点〕[Prior art and its problems]

従来、この種の温度プローブとしては、プローブ本体の
内部に導線を配線するとともに、プローブ本体の先端部
にサーミスタを固定し、サーミスタの電極と上記導線と
を接続したものがある。
Conventionally, this type of temperature probe includes one in which a conductor is wired inside a probe body, a thermistor is fixed to the tip of the probe body, and the electrode of the thermistor is connected to the conductor.

しかしながら、上記構成ではサーミスタと導線との接続
部が温度測定部に近接するため、温度測定部の厳しい環
境の影響を受けやすく、半田付けのような簡便な接続方
法は採用できず、ワイヤーポンディングやロウ付けのよ
うな接続方法に限られる。したがって、製造工程が非能
率的で、接続部の接合強度も不足する問題があった。し
かも、サーミスタまたは導線の外部を完全に保護できな
いため、温度測定部の水分や有害ガスなどの影響を受け
てサーミスタが劣化したり導線が腐食するおそれがあり
、耐久性に優れた温度プローブが得られなかった。
However, in the above configuration, the connection part between the thermistor and the conductor is close to the temperature measurement part, so it is easily affected by the harsh environment of the temperature measurement part, and simple connection methods such as soldering cannot be used, and wire bonding Connection methods such as brazing and brazing are limited. Therefore, there were problems in that the manufacturing process was inefficient and the bonding strength of the connection portion was insufficient. Furthermore, since the outside of the thermistor or conductor cannot be completely protected, the thermistor may deteriorate or the conductor may corrode due to the influence of moisture or harmful gases in the temperature measuring section, making it difficult to obtain a temperature probe with excellent durability. I couldn't.

〔発明の目的〕[Purpose of the invention]

本発明は上記問題点に鑑みてなされたもので、その目的
は、測定環境の影響を受けにくく、耐久性に優れ、かつ
製造の容易な温度プローブを提供することにある。
The present invention has been made in view of the above problems, and its purpose is to provide a temperature probe that is less susceptible to the influence of the measurement environment, has excellent durability, and is easy to manufacture.

〔発明の構成〕[Structure of the invention]

本発明の温度プローブは、絶縁基板の内部に互いに導通
しない少なくとも2層の電極を埋設し、上記基板の一端
面に露出した上記電極の端部間にサーミスタ膜を形成し
、該サーミスタ膜の外面に絶縁材料よりなる保護膜を被
着することにより、上記目的を達成する。
The temperature probe of the present invention has at least two layers of electrodes that are not electrically conductive embedded in an insulating substrate, a thermistor film is formed between the ends of the electrodes exposed on one end surface of the substrate, and an outer surface of the thermistor film is provided. The above object is achieved by applying a protective film made of an insulating material to the substrate.

〔作用〕[Effect]

即ち、絶縁基板の端部に露出した電極の端部間に、サー
ミスタ材料をスパック法などにより付着させることによ
りサーミスタ膜を形成したので、サーミスタを形成する
と同時に電極との接続も完了し、従来のようにワイヤー
ボンディングやロウ付けのような面倒な接続作業を解消
でき、格段に作業能率を改善できる。また、サーミスタ
膜は電極だけでなく基板にも付着するので、振動や衝撃
に対しても充分な接合強度を確保できる。さらに、サー
ミスタの外面は保護膜で被覆され、電極は基板の内部に
埋設されているので、水分や有害ガスなどが内部に浸入
するおそれがなく、温度測定部の厳しい環境下でもサー
ミスタおよび電極を完全に保護できる。
That is, since the thermistor film was formed by attaching the thermistor material between the ends of the electrodes exposed at the ends of the insulating substrate by the spacing method, the connection with the electrodes was completed at the same time as the thermistor was formed. This eliminates troublesome connection work such as wire bonding and brazing, and greatly improves work efficiency. Furthermore, since the thermistor film adheres not only to the electrodes but also to the substrate, sufficient bonding strength can be ensured against vibrations and shocks. Furthermore, since the outside surface of the thermistor is covered with a protective film and the electrodes are buried inside the substrate, there is no risk of moisture or harmful gases entering the inside, and the thermistor and electrodes can be used even in the harsh environment of the temperature measurement part. Fully protected.

(実施例〕 第1図5第2図は本発明にかかる温度プローブの一例を
示し、セラミンクなどの絶縁材料からなる棒状の基板1
と、この基板lの内部に形成された互いに導通しない2
層の電極5,6と、基板1の基端部の上下面に形成され
た電極バッド8,9と、基板lの先端面に露出した上記
電極5,6の端部間に付着形成されたサーミスタ膜lO
と、サーミスタ膜lOの外面を覆うように被着された絶
縁材料よりなる保護膜11とで構成されている。
(Example) Fig. 1 and Fig. 2 show an example of a temperature probe according to the present invention, in which a rod-shaped substrate 1 made of an insulating material such as ceramic
2 formed inside this substrate l that are not electrically conductive to each other.
The electrodes 5 and 6 of the layer, the electrode pads 8 and 9 formed on the upper and lower surfaces of the proximal end of the substrate 1, and the electrodes 5 and 6 formed adheringly between the ends of the electrodes 5 and 6 exposed on the distal end surface of the substrate l. Thermistor film lO
and a protective film 11 made of an insulating material and deposited to cover the outer surface of the thermistor film IO.

上記基板1は、第3図に示すように焼成前の3枚のセラ
ミック基板2,3.4を重ね合わせ、同時焼成すること
により形成されている。中央のセラミック基板3の上下
面には上記の帯状電極5゜6が形成されており、これら
電極5.6の一端部はセラミック基板3の先端面まで延
在しており、他端部はセラミック基板3の基端面より手
前で終端となっている。また、上下のセラミック14反
2゜4の基端部には上下に貫通する透孔2a、4aが形
成されており、これら透孔2a、4aは3枚のセラミン
ク基板2,3.4を重ね合わせたときに上記電極5.6
の基端部に対応する。上記基板lを焼成した後、基板l
の基端部に導電メツキを施すことにより、透孔2a+4
aの内面にスルーホール7が形成されるとともに、基端
部上下面に電極バンド8゜9が形成される。これにより
、電極パッド8,9と上記電極5.6とがスルーホール
7を介して電気的に接続される。上記電極バンド8,9
には外部導線(図示せず)が半田付は等によって接続さ
れる。
As shown in FIG. 3, the substrate 1 is formed by stacking three ceramic substrates 2, 3.4 before firing and firing them simultaneously. The above-mentioned band-shaped electrodes 5.6 are formed on the upper and lower surfaces of the central ceramic substrate 3, and one end of these electrodes 5.6 extends to the tip surface of the ceramic substrate 3, and the other end is made of ceramic. It terminates before the base end surface of the substrate 3. In addition, through holes 2a and 4a are formed in the base end portions of the upper and lower ceramics 14 by 2°4, and these through holes 2a and 4a are used to stack three ceramic substrates 2 and 3.4. When combined, the above electrode 5.6
Corresponds to the proximal end of. After firing the above substrate l,
By applying conductive plating to the base end of the through hole 2a+4
A through hole 7 is formed on the inner surface of a, and electrode bands 8.9 are formed on the upper and lower surfaces of the proximal end. Thereby, the electrode pads 8 and 9 and the electrode 5.6 are electrically connected via the through hole 7. The above electrode bands 8, 9
An external conductor (not shown) is connected to the terminal by soldering or the like.

上記のごとく基板lを焼成した段階で基板1の先端面に
は電極5,6が露出し、この先端面にSiCやMn、N
i、Coなどの遷移金属酸化物よりなるサーミスタ材料
をスパック法などによって付着させ、サーミスタ膜10
を形成する。これにより、サーミスタ膜lOが基板lに
一体に固定されるとともに、電極5.6と電気的に接続
される。サーミスタ膜10の初期抵抗値は中央のセラミ
ンク基板3の厚みと電極5.6の幅とで決定されるが、
これら厚みや幅を変更することにより初期抵抗値を容易
に変更できる。
When the substrate 1 is fired as described above, the electrodes 5 and 6 are exposed on the tip surface of the substrate 1.
A thermistor material made of a transition metal oxide such as i, Co, etc. is deposited by a spuck method or the like to form the thermistor film 10.
form. Thereby, the thermistor film IO is integrally fixed to the substrate 1 and electrically connected to the electrode 5.6. The initial resistance value of the thermistor film 10 is determined by the thickness of the central ceramic substrate 3 and the width of the electrode 5.6.
By changing these thicknesses and widths, the initial resistance value can be easily changed.

なお、電極5.6の熱収縮率がセラミック基板2.3.
4より大きいと、基板lを焼成したときに電極5,6が
基板lの先端面に露出せず、サーミスタ材料をスパッタ
しても電極5.6と接続できない場合があるので、この
場合には基板lの先端面を鏡面に研磨すればよい、基板
1の先端面を研磨することにより、電極5,6を確実に
露出させることができ、かつサーミスタ材料をスパッタ
した時の基板1との付着性も良好となる。
Note that the thermal shrinkage rate of the electrode 5.6 is that of the ceramic substrate 2.3.
If it is larger than 4, the electrodes 5 and 6 may not be exposed to the tip surface of the substrate 1 when the substrate 1 is fired, and it may not be possible to connect the thermistor material to the electrodes 5 and 6 even if the thermistor material is sputtered. It is only necessary to polish the tip end surface of the substrate 1 to a mirror surface. By polishing the tip end surface of the substrate 1, the electrodes 5 and 6 can be exposed reliably, and the adhesion to the substrate 1 can be prevented when the thermistor material is sputtered. The properties are also improved.

基4Fi、Iの先端面にサーミスタ膜10を形成した後
、サーミスタ膜10を覆うようにAj!zch、Siユ
N4などの絶縁材料からなる保護膜11を形成する。
After forming the thermistor film 10 on the tip surface of the groups 4Fi, I, Aj! is formed so as to cover the thermistor film 10. A protective film 11 made of an insulating material such as ZCH, Si-N4, etc. is formed.

これにより、サーミスタlI!10は外部と完全に隔離
され、温度測定部の厳しい環境下でもサーミスタ膜10
のt負傷や劣化を防止できる。
This allows the thermistor lI! 10 is completely isolated from the outside, and the thermistor film 10 can be used even under the harsh environment of the temperature measurement part.
tInjury and deterioration can be prevented.

上記実施例では1個の温度プローブの製造方法について
説明したが、実際には次のように多数個の温度プローブ
を同時に製造する。即ち、幅広な3枚のセラミック基板
を用意し、中央のセラミック基板の上下両面に多数本の
電極を形成しておく。
In the above embodiment, a method for manufacturing one temperature probe has been described, but in reality, a large number of temperature probes are manufactured simultaneously as follows. That is, three wide ceramic substrates are prepared, and a large number of electrodes are formed on both upper and lower surfaces of the central ceramic substrate.

そして、3枚のセラミック基板を重ね合わせて焼成した
後、基板を1個ずつ切断し、各基板の基部上下面にスル
ーホールおよび電極バンドを形成する。次に、第4図の
ように複数枚の基板lをスペーサ12を間にして、この
スペーサ12の端面が基板1の端面よりやや奥に入り込
んだ状態に重ね合わせ、基板lとスペーサ12とで形成
される凹部にワックス等13を注入して固めた後、基板
lの端面を鏡面に研磨する。そして、この基板1の端面
にサーミスタ材ギ4をスパンタ法等により付着させた後
、端面のワックス13のみをl容剤等によって除去し、
サーミスタ膜に絶縁材料を被着させることにより保護膜
を形成する。上記のような手順で製造すれば、温度プロ
ーブを量産化できる。
After stacking the three ceramic substrates and firing them, the substrates are cut one by one to form through holes and electrode bands on the upper and lower surfaces of the base of each substrate. Next, as shown in FIG. 4, a plurality of substrates 1 are placed one on top of the other with spacers 12 in between, with the end surfaces of the spacers 12 being slightly deeper than the end surfaces of the substrates 1, and the substrates 1 and spacers 12 After wax or the like 13 is injected into the formed recess and hardened, the end surface of the substrate 1 is polished to a mirror finish. Then, after attaching the thermistor material 4 to the end face of this substrate 1 by a spanner method or the like, only the wax 13 on the end face is removed with a lubricant or the like.
A protective film is formed by depositing an insulating material on the thermistor film. By manufacturing according to the procedure described above, temperature probes can be mass-produced.

なお、上記実施例では3枚のセラミック基板を重ね合わ
せることにより絶縁基板を形成したが、樹脂等の他の絶
縁材料を使用してもよく、電極の形成方法も上記実施例
に限らない。また、電極と外部導線とを接続するために
、絶縁基板の基端部にスルーホールと電極パッドを形成
したものに限らない。
In the above embodiment, the insulating substrate was formed by stacking three ceramic substrates, but other insulating materials such as resin may be used, and the method of forming the electrodes is not limited to the above embodiment. Furthermore, the present invention is not limited to the one in which through holes and electrode pads are formed at the base end of the insulating substrate in order to connect the electrodes and external conductive wires.

〔発明の効果〕〔Effect of the invention〕

以上の説明で明らかなように、本発明によれば絶縁基板
の端部に露出した電極の端部間にサーミスタ膜を形成し
たので、サーミスタ膜を形成すると同時に電極との接続
も完了し、接続作業を従来に比べて格段に能率化できる
とともに、充分な接合強度も確保できる。
As is clear from the above explanation, according to the present invention, since the thermistor film is formed between the ends of the electrodes exposed at the ends of the insulating substrate, the connection with the electrodes is completed at the same time as the thermistor film is formed, and the connection is completed. Work can be made much more efficient than before, and sufficient joint strength can be ensured.

また、サーミスタ膜の外面は保護膜で被覆され、電極は
基板の内部に埋設されているので、水分や有害ガスなど
によってサーミスタまたは電極が侵食されるおそれがな
く、温度測定部の厳しい環境下でも耐久性に優れかつ安
定した温度プローブを提供できる。
In addition, the outer surface of the thermistor film is covered with a protective film and the electrodes are buried inside the substrate, so there is no risk of the thermistor or electrodes being eroded by moisture or harmful gases, even in the harsh environment of the temperature measurement part. A highly durable and stable temperature probe can be provided.

さらに、サーミスタ膜および保31!膜を薄肉に形成で
きるので、熱容量を充分小さくでき、熱応答性の良好な
温度プローブが得られる。
In addition, the thermistor film and protection 31! Since the film can be formed thin, the heat capacity can be sufficiently reduced, and a temperature probe with good thermal responsiveness can be obtained.

なお、基板をある程度長くし、電極のサーミスタ膜側と
は反対側の端部に外部導線を接続するようにすれば、こ
の接続部を温度測定部より離れた安定な環境下にもって
来ることができるので、半田付けのような簡便な接続方
法を採用でき、接続方法に制限がなくなる。
Note that by making the board a certain length and connecting the external conductor to the end opposite to the thermistor film side of the electrode, this connection can be placed in a stable environment away from the temperature measurement part. Therefore, a simple connection method such as soldering can be used, and there are no restrictions on connection methods.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明にかかる温度プローブの一例の斜視図、
第2図は第1図の■−■線断面図、第3図は基板の焼成
前の分解斜視図、第4図番よ多数の温度プローブを製造
する場合の断面図である。 l・・・基板、2.3.4・・・セラミ・ツク基板、5
゜6・・・電極、7・・・スルーホール、8,9・・・
電極/< 7ド、10・・・サーミスタ膜、11・・・
保護膜。
FIG. 1 is a perspective view of an example of a temperature probe according to the present invention;
2 is a cross-sectional view taken along the line ■--■ in FIG. 1, FIG. 3 is an exploded perspective view of the substrate before firing, and FIG. 4 is a cross-sectional view when a large number of temperature probes are manufactured. l...Substrate, 2.3.4...Ceramic substrate, 5
゜6...electrode, 7...through hole, 8,9...
Electrode/<7 de, 10... thermistor film, 11...
Protective film.

Claims (1)

【特許請求の範囲】[Claims] 絶縁基板の内部に互いに導通しない少なくとも2層の電
極を埋設し、上記基板の一端面に露出した上記電極の端
部間にサーミスタ膜を形成し、該サーミスタ膜の外面に
絶縁材料よりなる保護膜を被着したことを特徴とする温
度プローブ。
At least two layers of electrodes that are not electrically conductive to each other are buried inside an insulating substrate, a thermistor film is formed between the ends of the electrodes exposed on one end surface of the substrate, and a protective film made of an insulating material is provided on the outer surface of the thermistor film. A temperature probe characterized by being coated with.
JP5591088A 1988-03-09 1988-03-09 Temperature probe Pending JPH01229924A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5591088A JPH01229924A (en) 1988-03-09 1988-03-09 Temperature probe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5591088A JPH01229924A (en) 1988-03-09 1988-03-09 Temperature probe

Publications (1)

Publication Number Publication Date
JPH01229924A true JPH01229924A (en) 1989-09-13

Family

ID=13012268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5591088A Pending JPH01229924A (en) 1988-03-09 1988-03-09 Temperature probe

Country Status (1)

Country Link
JP (1) JPH01229924A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020523581A (en) * 2017-07-21 2020-08-06 テーデーカー エレクトロニクス アーゲー Contact temperature measurement probe

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020523581A (en) * 2017-07-21 2020-08-06 テーデーカー エレクトロニクス アーゲー Contact temperature measurement probe

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