JPH01229497A - Nonvolatile semiconductor memory - Google Patents

Nonvolatile semiconductor memory

Info

Publication number
JPH01229497A
JPH01229497A JP5525588A JP5525588A JPH01229497A JP H01229497 A JPH01229497 A JP H01229497A JP 5525588 A JP5525588 A JP 5525588A JP 5525588 A JP5525588 A JP 5525588A JP H01229497 A JPH01229497 A JP H01229497A
Authority
JP
Japan
Prior art keywords
column
memory
semiconductor memory
memory cell
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5525588A
Inventor
Masanori Hayashigoshi
Kazuo Kobayashi
Yoshikazu Miyawaki
Takeshi Nakayama
Yasushi Terada
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5525588A priority Critical patent/JPH01229497A/en
Publication of JPH01229497A publication Critical patent/JPH01229497A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To avoid the delay of access time at the time of reading/writing despite the large capacity of the title memory sharing a column latch in divided column lines.
CONSTITUTION: A nonvolatile semiconductor memory contains a memory cell array consisting of memory cells allocated in both row and column directions in the form of an array and the column latches set for each column line. Then the semiconductor memory is divided into two memory cell arrays MA11 and MA12 (MA21, MA22) of (m/2×n) constitution respectively and these cell arrays share a column latch CL1. Thus the wiring capacity can be halved for the column lines (bit line, control gate line) of a memory cell array. As a result, the time required for charging/discharging the column lines can be extremely reduced and the access time is shortened to satisfactorily cope with the large capacity.
COPYRIGHT: (C)1989,JPO&Japio
JP5525588A 1988-03-08 1988-03-08 Nonvolatile semiconductor memory Pending JPH01229497A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5525588A JPH01229497A (en) 1988-03-08 1988-03-08 Nonvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5525588A JPH01229497A (en) 1988-03-08 1988-03-08 Nonvolatile semiconductor memory

Publications (1)

Publication Number Publication Date
JPH01229497A true JPH01229497A (en) 1989-09-13

Family

ID=12993488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5525588A Pending JPH01229497A (en) 1988-03-08 1988-03-08 Nonvolatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPH01229497A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08227587A (en) * 1994-12-12 1996-09-03 Samsung Electron Co Ltd Data protective circuit for nonvolatile memory
US6272042B1 (en) 1992-07-06 2001-08-07 Hitachi, Ltd Nonvolatile semiconductor memory
US7688643B2 (en) 1991-07-26 2010-03-30 Sandisk Corporation Device and method for controlling solid-state memory system

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8125834B2 (en) 1991-07-26 2012-02-28 Sandisk Technologies Inc. Device and method for controlling solid-state memory system
US7688643B2 (en) 1991-07-26 2010-03-30 Sandisk Corporation Device and method for controlling solid-state memory system
US7092296B2 (en) 1992-07-06 2006-08-15 Hitachi, Ltd. Nonvolatile semiconductor memory
US6370059B2 (en) 1992-07-06 2002-04-09 Hitachi, Ltd. Nonvolatile semiconductor memory
US6510086B2 (en) 1992-07-06 2003-01-21 Hitachi, Ltd. Nonvolatile semiconductor memory
US6538926B2 (en) 1992-07-06 2003-03-25 Hitachi, Ltd. Nonvolatile semiconductor memory system with capability of starting a new program operation while an existing program operation is being performed
US6738310B2 (en) 1992-07-06 2004-05-18 Renesas Technology Corp. Nonvolatile semiconductor memory
US6335880B2 (en) 1992-07-06 2002-01-01 Hitachi, Ltd. Nonvolatile semiconductor memory
US7110320B2 (en) 1992-07-06 2006-09-19 Renesas Technology Corp. Nonvolatile semiconductor memory
US7173853B2 (en) 1992-07-06 2007-02-06 Renesas Technology Corp. Nonvolatile semiconductor memory
US7366016B2 (en) 1992-07-06 2008-04-29 Solid State Storage Solutions, Llc Nonvolatile semiconductor memory
US6272042B1 (en) 1992-07-06 2001-08-07 Hitachi, Ltd Nonvolatile semiconductor memory
US7746697B2 (en) 1992-07-06 2010-06-29 Solid State Storage Solutions, Inc. Nonvolatile semiconductor memory
US8072809B2 (en) 1992-07-06 2011-12-06 Solid State Storage Solutions, Inc. Nonvolatile semiconductor memory
JPH08227587A (en) * 1994-12-12 1996-09-03 Samsung Electron Co Ltd Data protective circuit for nonvolatile memory

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