JPH01227485A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH01227485A JPH01227485A JP5339688A JP5339688A JPH01227485A JP H01227485 A JPH01227485 A JP H01227485A JP 5339688 A JP5339688 A JP 5339688A JP 5339688 A JP5339688 A JP 5339688A JP H01227485 A JPH01227485 A JP H01227485A
- Authority
- JP
- Japan
- Prior art keywords
- window
- layer
- laser
- resonator
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 238000003776 cleavage reaction Methods 0.000 claims abstract 2
- 230000010355 oscillation Effects 0.000 claims abstract 2
- 230000007017 scission Effects 0.000 claims abstract 2
- 230000007704 transition Effects 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 7
- 230000031700 light absorption Effects 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 abstract description 4
- 230000005855 radiation Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 55
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 238000005253 cladding Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000008832 photodamage Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体レーザ装置に関し、特にその高出力
化のための改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor laser device, and particularly to improvements for increasing the output thereof.
第２図は従来の窓構造を有する半導体レーザ装置の一例
を示す図であり、図において、１はｐ−ＧａＡｓ （０
０１）基板、２はｎ−ＧａＡｓ電流ブ０７り層、３はｐ
−Ａｊｌ、Ｇａ、−、Ａｓ第１クラフト層、４はＡｌ、
Ｇａ、−、Ａａ活性層、５はｎ−Ａｊ、Ｇａ５−Ｘ／ｌ
ｋｓ第２クラッド層、６はｎ−ＧａＡｓコンタクト層、
７は窓構造部、８は共振器端面での光の出射部である。FIG. 2 is a diagram showing an example of a conventional semiconductor laser device having a window structure. In the figure, 1 is p-GaAs (0
01) Substrate, 2 is n-GaAs current barrier layer, 3 is p
-Ajl, Ga, -, As first craft layer, 4 is Al,
Ga, -, Aa active layer, 5 is n-Aj, Ga5-X/l
ks second cladding layer, 6 an n-GaAs contact layer,
Reference numeral 7 indicates a window structure, and reference numeral 8 indicates a light emitting section at the end face of the resonator.
ここで活性層、クラッド層のＡ１組成比はｘ＞ｙとなる
ように設定されている。Here, the A1 composition ratio of the active layer and the cladding layer is set so that x>y.
次に動作について説明する。Next, the operation will be explained.
本従来例における窓構造６は、基板１の共振器端面に当
たる部分に凹部を形成しておき、この上に各層を形成す
ることにより形成される。The window structure 6 in this conventional example is formed by forming a recess in a portion of the substrate 1 corresponding to the end face of the resonator, and forming each layer thereon.
このような構造をもつ半導体レーザ装置に電流を印加す
ると、レーザチリブ内部では光は活性層４を中心とする
導波領域で導波してレーザ光増幅が行なわれる。そして
共振器端面では、活性層４よりもエネルギーバンドギャ
ップの大きな第２クラッド層で形成された出射部８より
光出射が行なわれるため、端面での光の吸収による発熱
が従来の活性層付近から光出射されるものに比して少な
（、端面の光損傷を大幅に低減でき、レーザ光出射の高
出力化に極めて効果がある。When a current is applied to a semiconductor laser device having such a structure, light is guided in a waveguide region centered on the active layer 4 inside the laser chilib, and laser light is amplified. At the resonator end face, light is emitted from the output part 8 formed of the second cladding layer with a larger energy bandgap than the active layer 4, so that heat generated by absorption of light at the end face is transferred from the vicinity of the conventional active layer. The amount of light damage to the end face can be significantly reduced compared to that of the laser beam emitted, and it is extremely effective in increasing the output of laser light emission.
従来のｉ構造を有する半導体レーザ装置は以上のように
構成されており、その窓構造の形成は、レーザ基本構造
を含む結晶成長社よるところが殆どであるが、この方法
による形成では、特に窓部での活性層の折れ曲がり形状
を安定に実現することは極めて困難であるという問題点
があった。また、窓領域７を形成するための基板ｌの凹
部のように、結晶軸が（００１）面からズした面上への
結晶成長は、（００１）面上への結晶成長に比して、成
長速度、キャリア濃度等結晶成長特性が異なるため、窓
構造の一設計はこの結晶成長性で限定される場合が多く
、所望の窓構造が得られ難いという問題点があった。A conventional semiconductor laser device having an i-structure is constructed as described above, and the formation of the window structure is mostly performed by Crystal Growth Co., Ltd., which includes the basic laser structure. There was a problem in that it was extremely difficult to stably realize the bent shape of the active layer. Furthermore, crystal growth on a plane where the crystal axis is deviated from the (001) plane, such as on a concave portion of the substrate l for forming the window region 7, is more difficult than crystal growth on the (001) plane. Since the crystal growth characteristics such as growth rate and carrier concentration are different, the design of a window structure is often limited by the crystal growth characteristics, and there is a problem that it is difficult to obtain a desired window structure.
この発明は、上記のような問題点を解消するためになさ
れたもので、従来の窓構造を持たない構造の半導体レー
ザの特性をそのまま有した状態で、良品の窓構造を安定
に形成できる半導体レーザ装置を得ることを目的とする
。This invention was made to solve the above-mentioned problems, and it is a semiconductor laser that can stably form a good window structure while retaining the characteristics of a conventional semiconductor laser without a window structure. The purpose is to obtain a laser device.
この発明に係る半、導体レーザ装置は、半導体レーザ基
本構造の襞間により形成、した共振器端面に、該半導体
レーザの活性層のバンドギャップエネルギーより高いバ
ンドギャップエネルギーを有する材質による薄膜を平面
状に分子線エピタキシャル法あるい気相成長法により結
晶成長して形成し、窓層としたものである。The semi-conductor laser device according to the present invention has a planar thin film made of a material having a bandgap energy higher than that of the active layer of the semiconductor laser, on the resonator end face formed between the folds of the basic structure of the semiconductor laser. The window layer is formed by crystal growth using molecular beam epitaxial method or vapor phase growth method.
この発明においては、レーザ基本構造の形成と、全く別
の結晶成長により窓層を形成したから、レーザ媒質内で
の光翼波を乱すことなく、任意の先導波方向の長さを有
する窓構造を安定した結晶性で実現することができる。In this invention, since the window layer is formed by crystal growth that is completely different from the formation of the laser basic structure, the window layer can have a length in any leading wave direction without disturbing the optical wing wave within the laser medium. can be realized with stable crystallinity.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例による半導体レーザ装置を示
す図であり、図において、ｌはｐ−ＧａＡｓ（００１）
基板、２はｎ−ＧａＡｓ電流ブロック層、３はｐ−Ａ１
１ｓ Ｇａ（−ｗ Ａｓ第１クラッド層、４はＡｌｙ
Ｇａｔ−ｙ Ａ’活、性層、５はｎ−Ａ ｌ ＊ Ｇ
ａ ＋−ｘ Ａ ｓ第２クラッド層、６はｎ−ＧａＡｓ
コンタクト層、１０は半絶縁性Ａ１ｍＧａ＋−ｇＡｓ窓
層、１１はレーザ光出射領域である。FIG. 1 is a diagram showing a semiconductor laser device according to an embodiment of the present invention, in which l represents p-GaAs (001).
Substrate, 2 is n-GaAs current blocking layer, 3 is p-A1
1s Ga(-w As first cladding layer, 4 is Aly
Gat-y A' active, sexual layer, 5 is n-A l * G
a + -x A s second cladding layer, 6 is n-GaAs
A contact layer 10 is a semi-insulating A1mGa+-gAs window layer, and 11 is a laser beam emitting region.
本実施例の窓層１０を除く基本レーザ構造は、従来の窓
構造を持たない構造の半導体レーザの基本レーザ構造と
同様である。従ってその製造も全く同様の工程で実現す
ることができる。即ち、基板ｌ上に電流ブロック層２を
形成した後、該ブロック層２をストライプ状に除去する
。その後、第１クラツド層３．活性層４．第２クラフト
層５゜及びコンタクト層６を順次形成し、襞間を行なう
ことにより基本レーザ構造が得られる。このようにして
得られた基本レーザ構造の共振器両端面に活性層４を構
成するＡｌ１ＸＧａ１−ヨＡ３よりエネルギーバンドギ
ャップの大きなＡ １．Ｇ ａ ＋−ｓ＾Ｓを結晶感長
して窓層ｌＯを形成することにより第１図に示す本実施
例の半導体レーザ装置ができあがる。ここで、窓層１０
の形成においては窓層結晶成長時にレーザ結晶中の不純
物拡散等の影響を最小限に抑える必要があり、また共振
器端面以外での成長を・抑制した選択成長を行なう必要
があるので、低温で良品な結晶ができ、かつ結晶成長面
の選択性の高い、ＭＢＥ （分子線エピタキシー）法ま
たは気相成長法によりこれを形成する。The basic laser structure of this embodiment except for the window layer 10 is similar to the basic laser structure of a conventional semiconductor laser having no window structure. Therefore, its manufacture can be realized through completely similar steps. That is, after forming the current blocking layer 2 on the substrate 1, the blocking layer 2 is removed in stripes. Thereafter, the first cladding layer 3. Active layer 4. A basic laser structure is obtained by sequentially forming the second craft layer 5° and the contact layer 6 and performing the interfolding. In the basic laser structure thus obtained, the active layer 4 is formed on both end faces of the resonator.A1 has a larger energy bandgap than A3.1. The semiconductor laser device of this embodiment shown in FIG. 1 is completed by crystallizing G a + -s^S to form a window layer IO. Here, window layer 10
In the formation of window layer crystals, it is necessary to minimize the influence of impurity diffusion in the laser crystal during crystal growth, and it is also necessary to perform selective growth that suppresses growth on areas other than the cavity end faces. This is formed by the MBE (molecular beam epitaxy) method or the vapor phase growth method, which produces good quality crystals and has high selectivity of crystal growth planes.
次に動作について説明する。Next, the operation will be explained.
上述のようにして形成された本実施例の半導体レーザ装
置に電流を印加すると、窓層１０蔀以外の基本レーザ構
造部では光は活性Ｎ４を中心とする導波領域で導波して
レーザ光増幅が行なわれる。When a current is applied to the semiconductor laser device of this example formed as described above, in the basic laser structure other than the window layer 10, light is guided in a waveguide region centered on active N4 and becomes a laser beam. Amplification takes place.
そして共振器端面には活性Ｍ４よりもエネルギーバンド
ギャップの大きな窓層１０が形成されており、この窓７
１１０が形成された出射部１１より光出射が行なわれる
ため、端面での光の吸収による発熱を抑え、端面の光損
傷を大幅に低減でｉるため、高出力でレーザ光出射を行
なえる。A window layer 10 having a larger energy bandgap than the active M4 is formed on the resonator end face, and this window 7
Since light is emitted from the emitting portion 11 in which the laser beam 110 is formed, heat generation due to absorption of light at the end face is suppressed, and optical damage to the end face is significantly reduced, so that laser light can be emitted with high output.
このように本実施例では、基本レーザ構造を形成し、何
間して形成した端面にＭＢＥ法または気相成長法により
、該基本レーザ構造の活性層を構成するＡＩ、ｃ、ａ、
−、Ａｓよりエネルギーバンドギャップブの高いＡＩｔ
、Ｇａ１−、Ａｓ （ｚ＞ｙ）による窓層を形成した
から、レーザの高出力化を図ることができるとともに、
窓層の形成により基本的レーザ構造を乱すことは全くな
（先導波に対する窓構造の影響を極めて小さく抑えるこ
とができる。さらに、上記窓層は単一平面上の結晶成長
で結晶性良（、しかも窓部の厚みを精度よく制御して形
成できるため品質の高い窓構造を持った半導体レーザ装
置を得ることができる。In this example, a basic laser structure is formed, and then AI, c, a,
−, AIt with higher energy bandgap than As
, Ga1-, As (z>y), the laser output can be increased, and
The formation of the window layer does not disturb the basic laser structure at all (the influence of the window structure on the leading wave can be suppressed to an extremely small level. Furthermore, the window layer has good crystallinity due to crystal growth on a single plane ( Furthermore, since the thickness of the window portion can be controlled and formed with high accuracy, a semiconductor laser device having a high quality window structure can be obtained.
なお、上記実施例では窓層形成後、該窓層に対して何ら
加工を施していないが、窓層形成後、第１図に示すレー
ザ光出射領域１１を中心に外部からレーザ光等の光照射
により該窓層を部分的または全面的に加熱してアニール
することにより窓層の結晶性を向上するようにすれば、
レーザ光高出力特性を得る上でさらに効果がある。Note that in the above example, no processing was performed on the window layer after the window layer was formed, but after the window layer was formed, light such as a laser beam was applied from outside around the laser beam emitting area 11 shown in FIG. If the crystallinity of the window layer is improved by partially or entirely heating and annealing the window layer by irradiation,
This is further effective in obtaining high output laser beam characteristics.
また、窓層の上にさらにＡ ｌ ｔ ＯｓやＳ ｉ Ｏ
。In addition, Al t Os and Si O are further applied on the window layer.
.
の単層膜または多層膜によるパッシベーションを施して
やれば共振器端面光出射部の劣化を抑制するうえで掘め
て効果がある。Passivation using a single-layer film or a multi-layer film is effective in suppressing deterioration of the resonator end face light emitting portion.
以上のように、この発明によれば半導体レーザ装置にお
いて、基本レーザ構造を形成し、何間して形成した端面
にＭＢＥ法または気相成長法により、該基本レーザ構造
の活性層材質よりエネルギーバンドギャップの高い材質
による高抵抗の窓層を形成した構成としたから、レーザ
の高出力化を図ることができるとともに、窓層の形成で
基本的レーザ構造を乱すことは全くなく先導波に対する
窓構造の影響を極めて小さく抑えることができ、さらに
、上記窓層は単一平面上の結晶成長で結晶性良（、さら
に窓部の厚みを精度よく制御して形成できるため品質の
高い窓構造を持った半導体レーザ装置を得ることができ
る効果がある。As described above, in a semiconductor laser device according to the present invention, a basic laser structure is formed, and an energy band that is higher than that of the active layer material of the basic laser structure is formed by MBE or vapor phase epitaxy on the formed end face. Since the configuration has a high-resistance window layer made of a material with a high gap, it is possible to increase the output of the laser, and the formation of the window layer does not disturb the basic laser structure at all, creating a window structure for the leading wave. In addition, the above window layer has good crystallinity due to crystal growth on a single plane (furthermore, the window thickness can be precisely controlled and formed, resulting in a high-quality window structure). This has the effect of making it possible to obtain a semiconductor laser device with improved performance.
第１図はこの発明の一実施例による半導体レーザ装置を
示す図、第２図は従来の窓構造を有する半導体レーザ装
置を示す図である。
１はｐ−ＧａＡｓ （００１）基板、２はｎ−ＧａＡｓ
電流ブロック層、３はｐ−ＡＩｔ、Ｇａ、−。
Ａｓ第１クラッド層、４はＡ１．Ｇａｔ−、Ａｓ活性層
、５はｎ−Ａｌｘ Ｇａ、−、Ａｓ第２クラフト層、６
はｎ−ＧａＡＳコンタクト層、ｌＯは半絶縁性Ａ １
＠ Ｇ ａ Ｉ−ｍ Ａ ！窓層、１１はレーザ光出射
領域。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a diagram showing a semiconductor laser device according to an embodiment of the present invention, and FIG. 2 is a diagram showing a semiconductor laser device having a conventional window structure. 1 is p-GaAs (001) substrate, 2 is n-GaAs
Current blocking layer 3 is p-AIt, Ga, -. As first cladding layer, 4 is A1. Gat-, As active layer, 5 is n-Alx Ga,-, As second craft layer, 6
is the n-GaAS contact layer, lO is the semi-insulating A 1
@G a I-m A! A window layer, 11 is a laser beam emitting area. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
成し、 劈開法により共振器端面を形成し、 その後、上記共振器端面に垂直な方向に分子線エピタキ
シャル法あるいは気相成長法を行ない、上記共振器端面
上に、上記レーザ基本構造中の活性層材質の発光遷移準
位間のエネルギーギャップより大きなエネルギーギャッ
プを有する材質により、高抵抗薄膜を結晶成長し、光吸
収の少ない窓層を形成したことを特徴とする半導体レー
ザ装置。(1) Form the basic structure necessary for laser oscillation by crystal growth, form the resonator end face by cleavage method, and then perform molecular beam epitaxial method or vapor phase growth method in the direction perpendicular to the resonator end face, A high-resistance thin film is crystal-grown on the cavity end face using a material having a larger energy gap than the energy gap between the emission transition levels of the active layer material in the basic laser structure to form a window layer with low light absorption. A semiconductor laser device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5339688A JPH01227485A (en) | 1988-03-07 | 1988-03-07 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5339688A JPH01227485A (en) | 1988-03-07 | 1988-03-07 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01227485A true JPH01227485A (en) | 1989-09-11 |
Family
ID=12941664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5339688A Pending JPH01227485A (en) | 1988-03-07 | 1988-03-07 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01227485A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0450902A2 (en) * | 1990-04-02 | 1991-10-09 | Sharp Kabushiki Kaisha | A method for the production of a semiconductor laser device |
| EP0477033A2 (en) * | 1990-09-21 | 1992-03-25 | Sharp Kabushiki Kaisha | A semiconductor laser device |
| JPH04130786A (en) * | 1990-09-21 | 1992-05-01 | Sharp Corp | Semiconductor laser element and manufacture thereof |
| JPH04216688A (en) * | 1990-12-18 | 1992-08-06 | Sharp Corp | Manufacture of semiconductor device |
| JPH0897506A (en) * | 1994-09-28 | 1996-04-12 | Sharp Corp | Manufacture of end face growth window type semiconductor laser element |
| US6590920B1 (en) | 1998-10-08 | 2003-07-08 | Adc Telecommunications, Inc. | Semiconductor lasers having single crystal mirror layers grown directly on facet |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6058692A (en) * | 1983-09-12 | 1985-04-04 | Nec Corp | Manufacture of semiconductor laser element |
| JPH01166588A (en) * | 1987-12-23 | 1989-06-30 | Hitachi Ltd | Semiconductor laser |
-
1988
- 1988-03-07 JP JP5339688A patent/JPH01227485A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6058692A (en) * | 1983-09-12 | 1985-04-04 | Nec Corp | Manufacture of semiconductor laser element |
| JPH01166588A (en) * | 1987-12-23 | 1989-06-30 | Hitachi Ltd | Semiconductor laser |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0450902A2 (en) * | 1990-04-02 | 1991-10-09 | Sharp Kabushiki Kaisha | A method for the production of a semiconductor laser device |
| EP0477033A2 (en) * | 1990-09-21 | 1992-03-25 | Sharp Kabushiki Kaisha | A semiconductor laser device |
| JPH04130786A (en) * | 1990-09-21 | 1992-05-01 | Sharp Corp | Semiconductor laser element and manufacture thereof |
| EP0697756A2 (en) * | 1990-09-21 | 1996-02-21 | Sharp Kabushiki Kaisha | A semiconductor laser device and a method for producing the same |
| EP0697756A3 (en) * | 1990-09-21 | 1996-07-17 | Sharp Kk | A semiconductor laser device and a method for producing the same |
| JPH04216688A (en) * | 1990-12-18 | 1992-08-06 | Sharp Corp | Manufacture of semiconductor device |
| JPH0897506A (en) * | 1994-09-28 | 1996-04-12 | Sharp Corp | Manufacture of end face growth window type semiconductor laser element |
| US6590920B1 (en) | 1998-10-08 | 2003-07-08 | Adc Telecommunications, Inc. | Semiconductor lasers having single crystal mirror layers grown directly on facet |
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