JPH01226159A - Method and apparatus for cleaning silicon substrate surface - Google Patents
Method and apparatus for cleaning silicon substrate surfaceInfo
- Publication number
- JPH01226159A JPH01226159A JP5279488A JP5279488A JPH01226159A JP H01226159 A JPH01226159 A JP H01226159A JP 5279488 A JP5279488 A JP 5279488A JP 5279488 A JP5279488 A JP 5279488A JP H01226159 A JPH01226159 A JP H01226159A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon substrate
- gas
- processing tank
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 44
- 239000010703 silicon Substances 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 238000004140 cleaning Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims description 20
- 239000007789 gas Substances 0.000 claims abstract description 33
- 239000011261 inert gas Substances 0.000 claims abstract description 13
- 238000010574 gas phase reaction Methods 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 239000000126 substance Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000003321 atomic absorption spectrophotometry Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、シリコン基板表面の清浄化方法及び清浄化
装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method and apparatus for cleaning the surface of a silicon substrate.
（従来の技術）
シリコン基板は従来、過酸化水素水、アンモニア水及び
水で湿式洗浄した後、この洗浄後のシリコン基板を回転
水切装置にかけたり、或いはアルコール等有機化合物を
用いたりして乾燥し清浄化していた。(Prior Art) Conventionally, silicon substrates have been wet-cleaned with hydrogen peroxide, ammonia, and water, and then dried by placing the cleaned silicon substrate in a rotary drainer or using an organic compound such as alcohol. It was being cleaned.
そして、上記湿式洗浄後の酸化膜の厚さは数人程度てあ
り、その後、酸化膜が雰囲気中において数１０人程度ま
で自然醇化により成長し安定化するものであることが知
られている。It is known that the thickness of the oxide film after the above-mentioned wet cleaning is on the order of several tens of people, and then the oxide film grows and becomes stable in an atmosphere by natural liquefaction to a thickness of about several tens of people.
（発明か解決しようとする課題）
シリコン基板の表面は化学的に活性てあり、空気等から
なる雰囲気中の不純物、例えは金属や有搬物微粒子を自
然酸化膜中に取り込み、或いは空気中に存在する水酸基
、酸素、窒素等と反応を起し、自然酸化膜の成長にむら
を生じて清浄な表面が得難いという問題があった。(Problem to be solved by the invention) The surface of the silicon substrate is chemically active, and impurities in the atmosphere such as air, such as metals and particles, can be incorporated into the natural oxide film or into the air. There is a problem in that it reacts with existing hydroxyl groups, oxygen, nitrogen, etc., causing uneven growth of a natural oxide film, making it difficult to obtain a clean surface.
本発明は、上記問題点を解決するシリコン基板表面の清
浄化方法を提案するとともに、同方法に使用する清浄化
装置を提供する目的でなされたものである。The present invention has been made for the purpose of proposing a method for cleaning the surface of a silicon substrate that solves the above-mentioned problems, and also providing a cleaning device for use in the method.
（課題を解決するための手段）
すなわち本発明方法は、概ね、シリコン基板表面の酸化
膜及び表面シリコン層を化学処理により除去する気相反
応の第１工程と、その後の化学処理によりシリコン基板
表面にシリコン酸化膜を形成する第２工程を有する構成
とされ、本発明装着は、シリコン基板を収脱可能とし且
つ気密保持可能な処理槽に、酸化膜除去ガス送給管、不
活性ガス送給管及び酸化膜形成ガス送給管並びに排気管
を具備させた構成とされている。(Means for Solving the Problem) That is, the method of the present invention generally includes a first step of a gas phase reaction in which an oxide film and a surface silicon layer on the surface of a silicon substrate are removed by chemical treatment, and a subsequent chemical treatment to remove the oxide film and surface silicon layer on the surface of the silicon substrate. The present invention is equipped with a second step of forming a silicon oxide film on the substrate, and the mounting according to the present invention includes an oxide film removal gas supply pipe, an inert gas supply pipe, and a processing tank in which the silicon substrate can be taken in and taken out and kept airtight. The structure includes a pipe, an oxide film forming gas supply pipe, and an exhaust pipe.
（作 用）
本発明方法は上述した如く、まず第１工程において気相
反応でシリコン基板表面の酸化膜を除去しく乾式）、続
く第２工程においてその後のシリコン基板表面に積極的
に化学反応を進行させて酸化膜を形成するものである。(Function) As described above, in the method of the present invention, first, in the first step, an oxide film on the surface of the silicon substrate is removed by a gas phase reaction (dry method), and then in the second step, a chemical reaction is actively carried out on the surface of the silicon substrate. This process forms an oxide film.
従って、第１工程、第２工程がともに気相反応となり、
第１工程と第２工程とに連続性を付与できる。Therefore, both the first step and the second step are gas phase reactions,
Continuity can be provided between the first step and the second step.
そして、第２工程で化学的処理により積極的に酸化膜を
成長させることにより、酸化膜形成のスピードを向上さ
せることができ、用いる薬品の純度保持により不純物の
混入を防止できる。By actively growing the oxide film through chemical treatment in the second step, the speed of oxide film formation can be improved, and the purity of the chemicals used can be maintained to prevent contamination of impurities.
また、本発明装置では、不活性ガス送給管を処理槽に接
続しているので、不活性ガスの送給を介装して、第１工
程て使用するガスと、第２工程で使用するガスを順次送
り込み、第１工程と第２工程を同一装置により行い得る
。In addition, in the apparatus of the present invention, since the inert gas supply pipe is connected to the processing tank, the inert gas supply is interposed between the gas used in the first step and the gas used in the second step. The first step and the second step can be performed by the same device by feeding the gases sequentially.
（実施例）
以下、本発明装置を、例示図面に基いて説明し、続いて
同装置を用いた本発明方法を説明する。(Example) Hereinafter, the apparatus of the present invention will be explained based on illustrative drawings, and then the method of the present invention using the same apparatus will be explained.
第１図は本発明方法のフローチャート、第２図は本発明
装置の一実施例を示す断面図である。FIG. 1 is a flowchart of the method of the present invention, and FIG. 2 is a sectional view showing an embodiment of the apparatus of the present invention.
図において、１はシリコン基板２の化学処理を行う処理
槽で、該処理槽１はウェーハキャリア３を収脱可能に収
め、且つ気密保持可能な構成とされている。In the figure, reference numeral 1 denotes a processing tank for chemically processing a silicon substrate 2, and the processing tank 1 has a structure in which a wafer carrier 3 can be retractably housed therein, and the wafer carrier 3 can be kept airtight.
そして、上記処理槽１は、その内部において第１工程Ａ
の化学処理と第２工程Ｂの化学処理かともに行い得る構
成とされている。The processing tank 1 has a first step A inside thereof.
The structure is such that both the chemical treatment in step B and the chemical treatment in second step B can be performed.
すなわち、上記処理槽１に、酸化膜除去ガス送給管４、
不活性ガス送給管５及び酸化膜形成ガス送給管６並びに
排気管７を連接し、上記それぞれの管４，５，６．７に
バルブ４ａ、５ａ、６ａ。That is, the processing tank 1 is provided with an oxide film removal gas supply pipe 4,
The inert gas supply pipe 5, the oxide film forming gas supply pipe 6, and the exhaust pipe 7 are connected, and valves 4a, 5a, 6a are provided in the respective pipes 4, 5, 6.7.
７ａを設け、さらに、排気管７にはポンプ８を介装し、
それぞれの送給管４，５．６には、ガス発生装置４ｂ、
５ｂ、６ｂを付設している。7a, and furthermore, a pump 8 is interposed in the exhaust pipe 7,
Each of the feed pipes 4, 5.6 includes a gas generator 4b,
5b and 6b are attached.
上述の本発明装置は、本発明方法を実施するのに適して
いる。The device according to the invention described above is suitable for carrying out the method according to the invention.
具体的には、ウェーハキャリア３にシリコン基板２を載
設し、該ウェーハキャリア３を処理槽１内に収めて該処
理槽１を気密状態となし、次に不活性ガス送給管５のバ
ルブ５ａ及び排気管７のバルブ７ａを開いてポンプ８を
駆動し、処理槽１内の空気を抜き取ると同時に処理槽ｌ
内に窒素若しくはアルゴンガスを送り込む。かくして処
理槽１内の空気が窒素等の不活性ガスにとってかわられ
たく第１工程に入る準備が整った）ならば、不活性ガス
送給管５のバルブ５ａを閉じるとともに酸化膜除去ガス
送給管４のバルブ４ａを開き、ガス発生装置４ｂからフ
ッ化水素ガス若しくはフッ化水素酸の蒸気等酸化膜除去
ガスを処理槽１内に送り込み、該処理槽１内のシリコン
基板２を上記酸化膜除去ガスにさらす。この結果、シリ
コン基板２表面の酸化膜は酸化膜除去ガスによって除去
され第１工程Ａが、終了する。Specifically, the silicon substrate 2 is mounted on the wafer carrier 3, the wafer carrier 3 is placed in the processing tank 1 to make the processing tank 1 airtight, and then the valve of the inert gas supply pipe 5 is closed. 5a and the valve 7a of the exhaust pipe 7 to drive the pump 8, and at the same time remove the air from the processing tank 1.
Inject nitrogen or argon gas into the tank. When the air in the treatment tank 1 is ready to be replaced with an inert gas such as nitrogen and is ready to enter the first step, the valve 5a of the inert gas supply pipe 5 is closed and the oxide film removing gas is supplied. The valve 4a of the pipe 4 is opened, and an oxide film removing gas such as hydrogen fluoride gas or hydrofluoric acid vapor is sent from the gas generator 4b into the processing tank 1, and the silicon substrate 2 in the processing tank 1 is coated with the oxide film. Expose to removal gas. As a result, the oxide film on the surface of the silicon substrate 2 is removed by the oxide film removal gas, and the first step A is completed.
第１工程Ａが終了したならば酸化膜除去ガス送給管４の
バルブ４ａを閉じるとともに不活性ガス送給管５のバル
ブ５ａを開き、処理槽１内に残存している酸化膜除去ガ
スを窒素等の不活性ガスで置換し第２工程Ｂに入る準備
を整える。When the first step A is completed, close the valve 4a of the oxide film removal gas supply pipe 4 and open the valve 5a of the inert gas supply pipe 5 to remove the oxide film removal gas remaining in the processing tank 1. The gas is replaced with an inert gas such as nitrogen to prepare for entering the second step B.
続いて第乏工程Ｂに入る。つまりガス発生装着６ｂから
フィルター９、バルブ１０を通して酸素ガスをオゾン発
生装置１１に送り込み、ここで成長したオゾンを酸化膜
形成送給管６を介して処理室１に送り込み、該処理室１
内のシリコン基板２表面に積極的に酸化膜を形成する。Next, the process enters the poor process B. That is, oxygen gas is sent from the gas generation attachment 6b through the filter 9 and the valve 10 to the ozone generator 11, and the ozone grown here is sent to the processing chamber 1 via the oxide film forming feed pipe 6.
An oxide film is actively formed on the surface of the silicon substrate 2 inside.
そして、この酸化膜形成時の雰囲気はオゾンの充満され
た雰囲気であって不純物が存在せず、従って、ここに形
成される酸化膜はムラが無く、また不純物を含まないも
のとなる。かくして第２工程Ｂの終了後、オゾンを窒素
ガスで置換し、次の清浄化処理に備える。The atmosphere during the formation of this oxide film is an atmosphere filled with ozone and does not contain any impurities. Therefore, the oxide film formed here is uniform and does not contain impurities. After completing the second step B, ozone is replaced with nitrogen gas to prepare for the next cleaning process.
（発明の効果）
以上説明したように、本発明方法に依れば、第１工程と
第２工程とを同一装置で連続になし得て、作業性が向上
し、更に設備が簡素化されるのであり、何よりも従来と
比較した場合、シリコン基板表面の清浄度が著しく向上
するという効果がある。(Effects of the Invention) As explained above, according to the method of the present invention, the first step and the second step can be carried out consecutively using the same equipment, improving work efficiency and further simplifying the equipment. Above all, when compared with the conventional method, the cleanliness of the silicon substrate surface is significantly improved.
すなわち、下記表は、従来法に依るシリコン基板表面と
、本発明を用いたシリコン基板表面の不純物を、全屈元
素を指標として、原子吸光光度法にて比較したものであ
る。表より明らかなように本発明を使用することでシリ
コン基板表面の不純物はナトリウムについては１／１０
、アルミニウムについては１／１００にまで減少してい
る。That is, the table below compares the impurities on the silicon substrate surface according to the conventional method and the silicon substrate surface using the present invention by atomic absorption spectrophotometry using the total bending element as an index. As is clear from the table, by using the present invention, impurities on the silicon substrate surface are reduced to 1/10 of sodium.
, aluminum has decreased to 1/100.
このように本発明において、シリコン基板上の汚染、お
よび化学変化をなくすことができる。In this way, in the present invention, contamination and chemical changes on the silicon substrate can be eliminated.
（以下余白） 上ヒ（咬表 ［ｘｌＯ”原子／ｃｍ２］(Margin below) Upper hemisphere (bite table) [xlO” atoms/cm2]
第１図は本発明方法のフローチャート、第２図は本発明
装置の一実施例を示す断面図である。
Ａ・・・第１工程 Ｂ・・・第２工程１・・
・処理槽 ２・・・シリコン基板３・・・
ウェーハキャリア
４・・・酸化膜除去ガス送給管
５・・・不活性ガス送給管
６・・・酸化膜形成ガス送給管
７・・・排気管
特許出願人 九州電子金属株式会社FIG. 1 is a flowchart of the method of the present invention, and FIG. 2 is a sectional view showing an embodiment of the apparatus of the present invention. A... 1st process B... 2nd process 1...
・Processing tank 2...Silicon substrate 3...
Wafer carrier 4... Oxide film removal gas feed pipe 5... Inert gas feed pipe 6... Oxide film forming gas feed pipe 7... Exhaust pipe Patent applicant Kyushu Electronic Metals Co., Ltd.
Claims (3)
処理槽において、前記シリコン基板表面の酸化膜及び表
面シリコン層を気相反応により除去した後、再び気相反
応によりシリコン基板表面にシリコン酸化膜を形成する
ことを特徴とするシリコン基板表面の清浄化方法。(1) After removing the oxide film and surface silicon layer on the surface of the silicon substrate by a gas phase reaction in a processing tank in which the silicon substrate can be taken in and out and kept airtight, silicon oxidation is applied to the surface of the silicon substrate again by a gas phase reaction. A method for cleaning the surface of a silicon substrate, the method comprising forming a film.
処理槽において、前記処理槽内に酸化膜除去ガスを送り
込んで前記シリコン基板表面の酸化膜及び表面シリコン
層を除去し、次いで前記酸化膜除去ガスを一旦不活性ガ
スで置換し、しかる後、酸化膜形成ガスを前記処理槽内
に送り込んで前記シリコン基板表面にシリコン酸化膜を
形成することを特徴とするシリコン基板表面の清浄化方
法。(2) In a processing tank in which the silicon substrate can be taken in and out and kept airtight, an oxide film removal gas is sent into the processing tank to remove the oxide film and surface silicon layer on the surface of the silicon substrate, and then the oxide film is removed. A method for cleaning the surface of a silicon substrate, comprising once replacing the removal gas with an inert gas, and then sending an oxide film forming gas into the processing tank to form a silicon oxide film on the surface of the silicon substrate.
処理槽に、酸化膜除去ガス送給管、不活性ガス送給管及
び酸化膜形成ガス送給管並びに排気管を具備させたこと
を特徴とするシリコン基板表面の清浄化装置。(3) The processing tank that allows silicon substrates to be taken out and taken out and kept airtight is equipped with an oxide film removal gas supply pipe, an inert gas supply pipe, an oxide film formation gas supply pipe, and an exhaust pipe. Features: Cleaning device for silicon substrate surfaces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5279488A JPH01226159A (en) | 1988-03-07 | 1988-03-07 | Method and apparatus for cleaning silicon substrate surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5279488A JPH01226159A (en) | 1988-03-07 | 1988-03-07 | Method and apparatus for cleaning silicon substrate surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01226159A true JPH01226159A (en) | 1989-09-08 |
Family
ID=12924743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5279488A Pending JPH01226159A (en) | 1988-03-07 | 1988-03-07 | Method and apparatus for cleaning silicon substrate surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01226159A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102217031A (en) * | 2008-09-15 | 2011-10-12 | 吉布尔.施密德有限责任公司 | Method for the treatment of substrates, substrate and treatment device for carrying out said method |
-
1988
- 1988-03-07 JP JP5279488A patent/JPH01226159A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102217031A (en) * | 2008-09-15 | 2011-10-12 | 吉布尔.施密德有限责任公司 | Method for the treatment of substrates, substrate and treatment device for carrying out said method |
| JP2012502491A (en) * | 2008-09-15 | 2012-01-26 | ゲブリューダー シュミット ゲゼルシャフト ミット ベシュレンクテル ハフツング | Method for processing substrate, substrate and processing apparatus for performing the method |
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