JPH01225382A - Pressure sensitive element - Google Patents
Pressure sensitive elementInfo
- Publication number
- JPH01225382A JPH01225382A JP63051893A JP5189388A JPH01225382A JP H01225382 A JPH01225382 A JP H01225382A JP 63051893 A JP63051893 A JP 63051893A JP 5189388 A JP5189388 A JP 5189388A JP H01225382 A JPH01225382 A JP H01225382A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- sensitive
- whiskers
- parts
- sensitive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 239000011787 zinc oxide Substances 0.000 claims abstract description 13
- 230000035945 sensitivity Effects 0.000 abstract description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 229910052725 zinc Inorganic materials 0.000 abstract description 2
- 239000011701 zinc Substances 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052767 actinium Inorganic materials 0.000 description 2
- QQINRWTZWGJFDB-UHFFFAOYSA-N actinium atom Chemical compound [Ac] QQINRWTZWGJFDB-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000003763 resistance to breakage Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- -1 /L/vidium Chemical compound 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 208000032544 Cicatrix Diseases 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017344 Fe2 O3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910008649 Tl2O3 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- RYXHOMYVWAEKHL-UHFFFAOYSA-N astatine atom Chemical compound [At] RYXHOMYVWAEKHL-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000036772 blood pressure Effects 0.000 description 1
- ZKIBBIKDPHAFLN-UHFFFAOYSA-N boronium Chemical compound [H][B+]([H])([H])[H] ZKIBBIKDPHAFLN-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- KYCIUIVANPKXLW-UHFFFAOYSA-N dimethyl-(2-phenoxyethyl)-(thiophen-2-ylmethyl)azanium Chemical compound C=1C=CSC=1C[N+](C)(C)CCOC1=CC=CC=C1 KYCIUIVANPKXLW-UHFFFAOYSA-N 0.000 description 1
- 229910052730 francium Inorganic materials 0.000 description 1
- KLMCZVJOEAUDNE-UHFFFAOYSA-N francium atom Chemical compound [Fr] KLMCZVJOEAUDNE-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- QTQRFJQXXUPYDI-UHFFFAOYSA-N oxo(oxothallanyloxy)thallane Chemical compound O=[Tl]O[Tl]=O QTQRFJQXXUPYDI-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 230000037387 scars Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、荷重、圧力、歪などの機械量を電気量へ変換
する感圧素子に関する。さらに詳しくは、テトラボッド
状酸化亜鉛ウィスカーを用いた高感度の画期的な感圧素
子に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a pressure sensitive element that converts mechanical quantities such as load, pressure, strain, etc. into electrical quantities. More specifically, the present invention relates to a highly sensitive and innovative pressure-sensitive element using tetrabod-like zinc oxide whiskers.
本発明の応用範囲は広く、種々の圧力計9重量計、加速
度計、気圧計、血圧針、加速度計、はとんど変化が不要
で電気接点のない優れたスイッチ。The present invention has a wide range of applications, including various pressure gauges, weight gauges, accelerometers, barometers, blood pressure needles, accelerometers, and is an excellent switch that does not require any changes and has no electrical contacts.
ディジタイザ−1それにマイクロホンやピックアップな
ど、あらゆる感圧素子として応用できる。It can be applied to digitizers, microphones, pickups, and other pressure-sensitive devices.
従来の技術 従来より感圧素子には以下のものがあった。Conventional technology Conventionally, there have been the following types of pressure sensitive elements.
まず、金属抵抗線を受感素子とした金属抵抗歪ゲージで
ある。次に平行平板電極系で、圧力(荷重)がかかった
場合に電極間距離が小さくなることを利用して、静電容
量の変化で圧力の大きさを評価する平行平板−容量形の
ものがあった。First, it is a metal resistance strain gauge that uses a metal resistance wire as a sensing element. Next is the parallel plate electrode system, which uses the fact that the distance between the electrodes becomes smaller when pressure (load) is applied to evaluate the magnitude of pressure by changes in capacitance. there were.
その他、半導体の各種特性を利用した、半導体ピエゾ抵
抗歪ゲージ、感圧ダイオード(p−n接合ダイオード、
ツェナーダイオード、エサキダイオード、金属−半導体
障壁ダイオード)、感圧トランジスタなどがあった。In addition, semiconductor piezoresistive strain gauges, pressure-sensitive diodes (p-n junction diodes,
These included Zener diodes, Esaki diodes, metal-semiconductor barrier diodes), and pressure-sensitive transistors.
発明が解決しようとする課題 前記の金属抵抗歪ゲージ、平行平板−容量形。Problems that the invention aims to solve The above-mentioned metal resistance strain gauge is a parallel plate capacitive type.
半導体ピエゾ抵抗歪ゲージは、特に感度が小さいため比
較的大きな増幅器が必要となシ、一方、残りの半導体を
利用した素子は、製造的に高度な半導体技術を駆使して
作成する必要から自ずと製造歩留まシが低く高価となシ
、特性的にも耐衝撃性や信頼性に問題があった。また、
従来技術では、高感度で、しかも電圧(バイアス)一つ
で感度と感圧範囲が調整でき、2次元、S次元的に任意
な感圧部形状をとることが容易で、さらに、量産性に富
んで安価な感圧素子は無かった。Semiconductor piezoresistive strain gauges require relatively large amplifiers due to their particularly low sensitivity.On the other hand, devices using other semiconductors are naturally difficult to manufacture because they need to be created using advanced semiconductor technology. It had a low yield, was expensive, and had problems with impact resistance and reliability. Also,
Conventional technology has high sensitivity, the sensitivity and pressure sensitive range can be adjusted with a single voltage (bias), it is easy to take any shape of the pressure sensitive part in two dimensions and S dimensions, and it is also easy to mass produce. There were no plentiful and inexpensive pressure-sensitive elements.
課題を解決するための手段
本発明は、核部と、この核部から異なる:軸方向に伸び
た針状結晶部からなる酸化亜鉛ウィスカーを集合して受
感部として感圧素子を構成する。Means for Solving the Problems In the present invention, a pressure-sensitive element is constructed by assembling zinc oxide whiskers consisting of a core and needle-like crystal parts different from the core and extending in the axial direction as a sensing part.
ここで、針状結晶部の基部の径が0.7〜17μmであ
υ、前記針状結晶の基部から先端までの長さが3〜20
0μmである場合に特に極立った効果が得られる。Here, the diameter of the base of the needle crystal part is 0.7 to 17 μm, and the length from the base to the tip of the needle crystal is 3 to 20 μm.
Particularly remarkable effects can be obtained when the thickness is 0 μm.
作 用
本発明の感圧素子は、テトラボッド状酸化亜鉛ウィスカ
ー集合体を受感部にしておシ、酸化亜鉛ウィスカー(ひ
げ状結晶)同志の接触界面の効果と酸化亜鉛結晶の圧電
効果があいまって高感度の感圧素子が得られているもの
と考えられる。また、テトラボッド状ウィスカーの集合
体は、極めて疎な集合状態を作り、また、等制約に等方
的となるため、いずれの方向からの圧力に対しても、直
接強い応力の働く針状結晶が存在し、そのため高感度が
得られる。Function The pressure-sensitive element of the present invention uses an aggregate of tetrabod-like zinc oxide whiskers as the sensing part, and the effect of the contact interface between the zinc oxide whiskers (whiskers-like crystals) and the piezoelectric effect of the zinc oxide crystals combine. It is considered that a pressure-sensitive element with high sensitivity has been obtained. In addition, an aggregate of tetrabod-like whiskers forms an extremely sparse aggregated state and is isotropic under equal constraints, so that the needle-like crystals that directly exert strong stress will react to pressure from any direction. Therefore, high sensitivity can be obtained.
tた、テトラボッド状酸化亜鉛ウィスカーは本来大きな
弾力性があるため、その集合体は耐衝撃性が極めて高く
、従来の半導体を使った感圧素子の欠点を完全に克服す
ることとなり、信頼性の高い感圧素子が提供されること
となった。In addition, since tetrabod-shaped zinc oxide whiskers are inherently highly elastic, their aggregates have extremely high impact resistance, completely overcoming the drawbacks of conventional pressure-sensitive elements using semiconductors, and improving reliability. A high pressure sensitive element has now been provided.
tた、テトラボッド状酸化亜鉛ウィスカーの製造は、例
えば表面に酸化皮膜を有する金属亜鉛粉末を酸素を含む
雰囲気下で加熱処理するだけで簡単に得られるため、製
造歩留りが高く、安価な感圧素子が提供できる。In addition, tetrabod-shaped zinc oxide whiskers can be easily produced by, for example, heating metallic zinc powder with an oxide film on the surface in an oxygen-containing atmosphere, resulting in a high production yield and an inexpensive pressure-sensitive element. can be provided.
実施例 以下に実施例を用いて具体的に説明する。Example This will be specifically explained below using examples.
実施例1
金属亜鉛粉末を水共存下で、乳鉢式捕潰機で慣漬処理し
た後、水中に3日間放置し、しかる後乾燥してアルミナ
磁器製るつぼに入れ、1000℃の炉内へ入れて1時間
熱処理して酸化亜鉛ウィスカーを得た。その代表的な電
子顕微鏡写真を図に示す。Example 1 Metallic zinc powder was soaked in a mortar-type crusher in the presence of water, then left in water for 3 days, then dried, placed in an alumina porcelain crucible, and placed in a furnace at 1000°C. After heat treatment for 1 hour, zinc oxide whiskers were obtained. A typical electron micrograph is shown in the figure.
このウィスカーの針状結晶部の基部の径は平均8μmで
、基部から先端までの長さが平均10コμmであった。The diameter of the base of the needle-like crystal part of this whisker was 8 μm on average, and the length from the base to the tip was 10 μm on average.
大部分が異なる4軸方向に針状結晶が伸びたテトラボッ
ド状を示していたが、一部にはテトラボッド状ウィスカ
ーが壊れたと考えられる、1軸方向、2軸方向、3軸方
向に伸びたウィスカーが混入していた。Most of the specimens showed a tetrabod shape with needle-like crystals extending in four different axes, but some of them were thought to be broken tetrabod-like whiskers, with whiskers extending in one, two, and three axes. was mixed in.
このウィスカーを少量平行平板電極間に挟み、プレス圧
(有効電極部に対して)8KPでプレスして成形し、厚
さ約200μmの受感素子を得た。A small amount of this whisker was sandwiched between parallel plate electrodes and pressed and molded at a pressing pressure (relative to the effective electrode portion) of 8 KP to obtain a sensing element with a thickness of approximately 200 μm.
このとき有効電極径は28flφであった。電極材質は
、硬質クロムメツキした鉄である。At this time, the effective electrode diameter was 28flφ. The electrode material is hard chromed iron.
この受感素子を平行平板電極に挟んだまま、電極間に直
流のバイアス電圧をかけながら圧力−電流特性を評価し
た。その結果を第2図に示す。さらに、同一試料の抵抗
値変化をディジタルマルチメータ(ナシツナ/L/vP
−266OA)で測定したところ、0710Kpで抵抗
値が3桁以上変化した。With this sensing element sandwiched between parallel plate electrodes, the pressure-current characteristics were evaluated while applying a DC bias voltage between the electrodes. The results are shown in FIG. Furthermore, the change in resistance value of the same sample was measured using a digital multimeter (Nashituna/L/vP).
-266OA), the resistance value changed by more than three orders of magnitude at 0710Kp.
実施例2
実施例1と同様の試験をプレーナ形5の電極構成で実施
したところ、高感度の結果が得られた。Example 2 When a test similar to Example 1 was conducted using a planar type 5 electrode configuration, highly sensitive results were obtained.
実施例3
実施例1と同一のテトラボッド状酸化亜鉛ウィスカーを
、一般的なバリスタの焼結手法により焼結し、銀ペース
トを焼き付けてサンドインチ状電極を構成し、圧力−電
流特性を評価したところ、高感度の感圧素子であること
がわかった。Example 3 The same tetrabod-shaped zinc oxide whiskers as in Example 1 were sintered using a general varistor sintering method, silver paste was baked on to form a sandwich-shaped electrode, and the pressure-current characteristics were evaluated. It turned out to be a highly sensitive pressure-sensitive element.
実施例4
基部の径の平均が0.7μmよυ小さく、基部から先端
までの長さが3μmよシ小さな微細なテトラボッド状つ
4スカーを用いて、実施例1と同様の評価をしたところ
、この大きさから急に感度が悪くなったが、感圧性はけ
つきシしていた。Example 4 The same evaluation as in Example 1 was conducted using fine tetrabod-like 4 scars with an average diameter of the base as small as 0.7 μm and a length from the base to the tip as small as 3 μm. Due to this size, the sensitivity suddenly deteriorated, but the pressure sensitivity was excellent.
比較例
一般試薬(関東化学社製、)の酸化亜鉛粉末(粒状、平
均粒径約1μm)を用いて実施例1と同様の評価を実施
したが、感圧性は全く認められなかった。結果を第3図
に示す。Comparative Example The same evaluation as in Example 1 was carried out using zinc oxide powder (granular, average particle diameter of about 1 μm) of General Reagent (manufactured by Kanto Kagaku Co., Ltd.), but no pressure sensitivity was observed. The results are shown in Figure 3.
以上の実施例では、テトラボッド状ウィスカーの寸法が
比較的揃った例で示したが、あえて分布させて、適切な
感圧素子を得ることができるのは当然である。In the above embodiments, the dimensions of the tetrabod-like whiskers are relatively uniform, but it goes without saying that an appropriate pressure-sensitive element can be obtained by intentionally distributing the whiskers.
電極材料としては、他に、アlレミニウム、亜鉛。Other electrode materials include aluminum and zinc.
金、銀、銅、鉄、ニッケIv、クロム、コバルト。Gold, silver, copper, iron, nickel IV, chromium, cobalt.
リチウム、ベリリウム、ナトリウム、マグネシウム、チ
タン、バナジウム、マンガン、ガリウム。Lithium, beryllium, sodium, magnesium, titanium, vanadium, manganese, gallium.
スズ、アンチモン、インジウノ1.カドミウム、パラジ
ウム、ロジウム、/I/テニウム、テクネチウム。Tin, antimony, indium 1. Cadmium, palladium, rhodium, /I/thenium, technetium.
モリブデン、ニオブ、ジルコニウム、イツトリウム、ス
トロンチウム、/L/ビジウム、スカンジウム。Molybdenum, niobium, zirconium, yttrium, strontium, /L/vidium, scandium.
カリウム、カルシウム、アスタチン、ボロニウム。Potassium, calcium, astatine, boronium.
ビスマス、鉛、タリウム、水銀、白金、イリジウム、オ
スミウム、レニウム、タングステン、タンタル、ハフニ
ウム、バリウム、セシウム、フランシウム、ラジウム、
ランタン、およびランタン系元素、アクチニウム、およ
びアクチニウム系元素、などの単体あるいは複数の合金
あるいは混合物を用いることができる。Bismuth, lead, thallium, mercury, platinum, iridium, osmium, rhenium, tungsten, tantalum, hafnium, barium, cesium, francium, radium,
Lanthanum, a lanthanum-based element, actinium, an actinium-based element, and the like can be used alone, or an alloy or a mixture of a plurality of them can be used.
また、焼結には、バリスタや磁器コンデンサに一般ニ用
いらレル、B i 203 、 Co O+ M n
O、T i O2tSb203. Cr2O3,Fe2
O3,、PbO,ZrO2,s、to2゜D7203.
Y2O3,5n203.SrO,A6203.MnO□
。In addition, for sintering, metals commonly used for varistors and ceramic capacitors, B i 203, Co O+ M n
O, T i O2tSb203. Cr2O3, Fe2
O3,,PbO,ZrO2,s,to2°D7203.
Y2O3,5n203. SrO, A6203. MnO□
.
Cu2O,Tl2O3,Co3O4,La2O3,Pr
6o1.。Cu2O, Tl2O3, Co3O4, La2O3, Pr
6o1. .
BaOや前記電極材料の単体やその酸化物を一種類また
は、複数種類、適当量添加することができる。BaO, a single substance of the electrode material, or its oxide can be added in an appropriate amount in one or more types.
その他、焼結する場合あるいはしない場合においても無
機質や、有機質を適当量添加して、特性を安定化するこ
とが可能である。特に、各種材料をウィスカー中にドー
プすることにより、抵抗値を大きく変えることができ、
適切な設計上の設定に有用である。In addition, even when sintering or not, it is possible to stabilize the properties by adding an appropriate amount of inorganic or organic matter. In particular, by doping various materials into the whisker, the resistance value can be greatly changed.
Useful for proper design settings.
電極系は、サンドイッチ形、プレーナ形、くシ形、積層
形等いずれでもよい。The electrode system may be of any type, such as sandwich type, planar type, comb type, and laminated type.
電極面積も、実施例では2B111φの例で示したが、
構成上、小面積から限シなく大面積まで適用でき、また
、任意の形状はもとより、任意の3次元的凹凸をもった
感圧素子が容易に得られる。The electrode area was also shown as an example of 2B111φ in the example, but
Due to its structure, it can be applied to any area ranging from a small area to a large area without limitation, and a pressure sensitive element having an arbitrary shape as well as an arbitrary three-dimensional unevenness can be easily obtained.
さらに、テトフポッド状針状結晶の基部から先端までの
長さが3〜200μmの範囲のウィスカーが高感度で安
定性の高い感圧特性を示すが、長さの範囲はこれに限定
するものではない。Furthermore, whiskers with a length ranging from 3 to 200 μm from the base to the tip of the tetofpod-like needle crystals exhibit high sensitivity and highly stable pressure-sensitive characteristics, but the length range is not limited to this. .
とりわけ基部から先端までの長さが、60〜150μm
のテトラボッド状ウィスカーが、特性面、ウィスカーの
壊れにくさ、ハンドリングのし易さ、コスト面から最も
好ましい。In particular, the length from the base to the tip is 60 to 150 μm.
Tetrabod-like whiskers are most preferable from the viewpoint of characteristics, whisker resistance to breakage, ease of handling, and cost.
一方、テトラボッド状針状結晶部の基部の径が0.7〜
14μmの範囲のウィスカーが高感度で安定性の高い感
圧特性を示すが、径の大きさの範囲はこれに限定するも
のではない。とりわけ基部の 。On the other hand, the diameter of the base of the tetrabod-like needle crystal part is 0.7~
Whiskers in the range of 14 μm exhibit high sensitivity and stable pressure-sensitive characteristics, but the diameter size range is not limited to this. Especially at the base.
径が2〜10μmのテトラボッド状ウィスカーが、特性
面、ウィスカーの壊れにくさ、ハンドリングのし易さ、
コスト等の面から最も好ましい。Tetrabod-shaped whiskers with a diameter of 2 to 10 μm are characterized by their characteristics, whisker resistance to breakage, ease of handling,
This is the most preferable in terms of cost and the like.
受感部の厚さは、感度や、感圧範囲を考えて設計される
。また、受感部の厚さは成形プレス圧に依存するが、こ
れは、テトラボッド状ウィスカーの大きさ等を考慮して
、テトラボッド状ウィスカーが完全に壊れない範囲で設
定される。The thickness of the sensitive part is designed taking into consideration the sensitivity and pressure sensitive range. Further, the thickness of the sensing portion depends on the molding press pressure, but this is set within a range that does not completely break the tetrabod-like whiskers, taking into consideration the size of the tetrabod-like whiskers.
さらに、感圧素子の感度と感圧範囲は、バイアス電圧の
大きさだけで容易に大きく変え得る特長をもっているこ
とは本発明の感圧素子の特筆すべき点の1つである。Furthermore, one of the noteworthy features of the pressure-sensitive element of the present invention is that the sensitivity and pressure-sensitive range of the pressure-sensitive element can be easily and largely changed only by the magnitude of the bias voltage.
発明の効果
本発明は、高感度でしかも電圧(バイアス)一つで、感
度と、感圧範囲を容易に調整できる感圧素子を提供する
とともに、2次元、3次元的に任意な感圧部形状をとる
ことが容易であり、しかも量産性に富み安価である点で
、産業性が極めて大なるものがある。Effects of the Invention The present invention provides a pressure-sensitive element that is highly sensitive and can easily adjust the sensitivity and pressure-sensitive range with a single voltage (bias), and also provides an arbitrary pressure-sensitive element in two or three dimensions. It is easy to take a shape, can be mass-produced, and is inexpensive, making it extremely industrially viable.
第1図はテトラボッド状酸化亜鉛ウィスカーの電子顕微
鏡写真、第2図は同ウィスカー集合体の圧力−電流特性
図、第3図は酸化亜鉛粉末の圧カー電流特性図である。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図
1専崗
第2図
全圧力 (にう)
第3図
・全圧力(勺)
手続補正書(方式)
昭和63年6 月 を日
特許庁長官殿 違
1事件の表示
昭和63年特許願第51893 号
2発明の名称
感圧素子
3補正をする者
事件との関係 特 許 出 願 人
住 所 大阪府門真市大字門真1006番地名 称
(582)松下電器産業株式会社゛ 代表者
谷 井 昭 雄4代理人 〒571
住 所 大阪府門真市大字門真1006番地松下電器
産業株式会社内
7、補正の内容
明細書第10頁第16行末尾の[ウィスカーのJの次に
「結晶の構造を示すjを挿入します。FIG. 1 is an electron micrograph of tetrabod-like zinc oxide whiskers, FIG. 2 is a pressure-current characteristic diagram of the same whisker aggregate, and FIG. 3 is a pressure-current characteristic diagram of zinc oxide powder. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 1: Figure 2: Total pressure (Niu) Figure 3: Total pressure (Niu) Procedural amendment (method) June 1985 To the Commissioner of the Japan Patent Office Indication of case No. 1 Patent application No. 1988 51893 No. 2 Name of the invention Pressure-sensitive element 3 Relationship to the amended case Patent application Address 1006 Oaza Kadoma, Kadoma City, Osaka Name
(582) Matsushita Electric Industrial Co., Ltd. Representative
Akio Tanii 4 Agent 571 Address 7, Matsushita Electric Industrial Co., Ltd., 1006 Kadoma, Kadoma City, Osaka Prefecture. Insert j to indicate structure.
Claims (2)
状結晶部からなる酸化亜鉛ウィスカーを集合して受感部
とした感圧素子。(1) A pressure-sensitive element in which zinc oxide whiskers consisting of a core and needle-shaped crystal parts extending from the core in different axial directions are assembled to form a sensing part.
.7〜14μmであり、前記針状結晶の基部から先端ま
での長さが3〜200μmである請求項1記載の感圧素
子。(2) The diameter of the base of the needle-like crystal part of the zinc oxide whisker is 0
.. 2. The pressure-sensitive element according to claim 1, wherein the needle crystal has a length of 7 to 14 μm and a length from the base to the tip of the needle crystal is 3 to 200 μm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63051893A JP2553613B2 (en) | 1988-03-04 | 1988-03-04 | Pressure sensitive element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63051893A JP2553613B2 (en) | 1988-03-04 | 1988-03-04 | Pressure sensitive element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01225382A true JPH01225382A (en) | 1989-09-08 |
JP2553613B2 JP2553613B2 (en) | 1996-11-13 |
Family
ID=12899561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63051893A Expired - Lifetime JP2553613B2 (en) | 1988-03-04 | 1988-03-04 | Pressure sensitive element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2553613B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999057345A1 (en) * | 1998-04-30 | 1999-11-11 | Asahi Kasei Kogyo Kabushiki Kaisha | Functional element for electric, electronic or optical device and method for manufacturing the same |
US6810575B1 (en) | 1998-04-30 | 2004-11-02 | Asahi Kasai Chemicals Corporation | Functional element for electric, electronic or optical device and method for manufacturing the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008125848A (en) * | 2006-11-21 | 2008-06-05 | Okumura Yu-Ki Co Ltd | Pachinko machine |
-
1988
- 1988-03-04 JP JP63051893A patent/JP2553613B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999057345A1 (en) * | 1998-04-30 | 1999-11-11 | Asahi Kasei Kogyo Kabushiki Kaisha | Functional element for electric, electronic or optical device and method for manufacturing the same |
GB2352562B (en) * | 1998-04-30 | 2003-10-08 | Asahi Chemical Ind | Functional element for use in an electric, an electronic or an optical device and method for producing the same |
US6810575B1 (en) | 1998-04-30 | 2004-11-02 | Asahi Kasai Chemicals Corporation | Functional element for electric, electronic or optical device and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JP2553613B2 (en) | 1996-11-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH06318743A (en) | Humidity sensitive actuator | |
JP2591031B2 (en) | Photoconductive element | |
US3044968A (en) | Positive temperature coefficient thermistor materials | |
CN101759431B (en) | Zinc oxide piezoresistor material with low electric potential gradient and preparation method thereof | |
JPH01225382A (en) | Pressure sensitive element | |
GB1563934A (en) | Dielectric substrate with metallization containing nickel oxide | |
ES334466A1 (en) | Electric circuit elements and methods of manufacturing such elements | |
US3936790A (en) | Temperature sensitive resistor having a critical transition temperature of about 140°C | |
US3305816A (en) | Ternary alloy strain gauge | |
JPH0230561B2 (en) | ||
JP2547499Y2 (en) | Piezoelectric bimorph actuator | |
JP3757794B2 (en) | Semiconductor porcelain for thermistor and chip type thermistor using the same | |
JP4231653B2 (en) | Manufacturing method of laminated piezoelectric actuator | |
JPS59196503A (en) | Electrostrictive porcelain composition | |
JP6540746B2 (en) | Mechanical quantity sensor material and mechanical quantity sensor element | |
JP5725612B2 (en) | Critical temperature thermistor and thermistor element for thermistor | |
JPH0434101B2 (en) | ||
JP2004077304A (en) | Piezo-electric element and knocking sensor using the same | |
JPS6227028B2 (en) | ||
JPS6241401B2 (en) | ||
JPS5917206A (en) | Ceramic resistance material | |
GB661147A (en) | Improvements in or relating to electrical contact elements | |
JPH0717441B2 (en) | Porcelain composition | |
JPS5861601A (en) | Voltage nonlinear resistor | |
JPS5811721B2 (en) | Kanshitsusoshi |