JPH01225178A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPH01225178A JPH01225178A JP63051018A JP5101888A JPH01225178A JP H01225178 A JPH01225178 A JP H01225178A JP 63051018 A JP63051018 A JP 63051018A JP 5101888 A JP5101888 A JP 5101888A JP H01225178 A JPH01225178 A JP H01225178A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- emitting diode
- compound semiconductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 150000001875 compounds Chemical class 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 3
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 241000272201 Columbiformes Species 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はシリコン（Ｓｉ ）基板上に形成された発光
ダイオードに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to a light emitting diode formed on a silicon (Si 2 ) substrate.
第２図は例えば文献Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ
Ｌｅｔｔｅｒ４８巻２３号ページ１６１７−１６１９（
１９８６）に示された従来のＳｉ基板上の発光ダイオー
ドを示す断面図であり、図において（１）はｎ−８ｉ基
板、（２）はこのｎ−８ｉ基板（１）の主面上に形成さ
れたｎ形ガリウムヒ素（ｎ−ＧａＡｓ）バッファ層、（
３）はこのｎ−ＧａＡｓバッファ層（２）上に形成され
たｎ形アルミニウムガリウムヒ素（ｎ−ＡｇＯ−４Ｇａ
ｏ−ｓ Ａｓ ）層、（４１はこのｎ−ＩＪ６．ｓ Ｇ
ａ（１，６Ａｓ層（３）上に形成され、これとｐ−ｎ接
合を形成するｐ形アルミニウムガリウムヒ素（ｐ−Ａ４
１ｏ、５ｓＧａｏ、５５Ａｓ ）層である。Figure 2 is based on the literature Applied Physics, for example.
Letter Volume 48 No. 23 Pages 1617-1619 (
1986) is a cross-sectional view showing a conventional light emitting diode on a Si substrate, in which (1) is an n-8i substrate and (2) is a light emitting diode formed on the main surface of this n-8i substrate (1). n-type gallium arsenide (n-GaAs) buffer layer, (
3) is an n-type aluminum gallium arsenide (n-AgO-4Ga) layer formed on this n-GaAs buffer layer (2).
o-s As ) layer, (41 is this n-IJ6.s G
a (p-type aluminum gallium arsenide (p-A4) formed on the 1,6As layer (3) and forming a p-n junction with it
1o, 5sGao, 55As) layer.
また（５）はこのｐ−Ａｌｏ−ａｓＧａｏ４５Ａｓ層（
４）上の一部に形成されたｐ形ガリウムヒ素（ｐ−Ｇａ
Ａｓ） 領域、（６）はこのｐ−ＧａＡｓ領域（５）上
に形成されたｐ電極、（７）は上記ｎ−８ｉ基板（１）
の裏面１こ形成されたｎ電極である。In addition, (5) is this p-Alo-asGao45As layer (
4) P-type gallium arsenide (p-Ga
As) region, (6) is the p electrode formed on this p-GaAs region (5), and (7) is the above n-8i substrate (1).
An n-electrode is formed on the back surface of the .
従来の発光ダイオードは上記のように構成され、この発
光ダイオードに順バイアスして電流を流すと、ｎ −Ａ
ｇ３．４ Ｇａ６．＠ Ａｓ 層（３）から１）−Ａｇ
ｏ−ｓｓＧａｏ、５ｓＡｓ層（４）に電子が注入される
。この注入された電子とｐ−Ａｇｏ、ａｓＧａｏ−ｓｓ
Ａｓ層（４）内の正孔とが再結合し発光スル。A conventional light emitting diode is constructed as described above, and when forward biased current flows through this light emitting diode, n - A
g3.4 Ga6. @As layer (3) to 1)-Ag
Electrons are injected into the o-ssGao, 5sAs layer (4). This injected electron and p-Ago, asGao-ss
The holes in the As layer (4) recombine and emit light.
従って発光波長はｐ−ＡＩｔｏ−ｓｓＧａｏ、５ＢＡｓ
層（４）のバンドギャップのエネルギーで決まる。Therefore, the emission wavelength is p-AIto-ssGao, 5BAs
It is determined by the energy of the band gap of layer (4).
ところが、Ｓｔ基板上に化合物半導体層を形成する場合
に、Ｓ＋と化合物半導体の熱膨張係数が異なリ、化合物
半導体の方が約２倍大きい。従って化合物半導体の結晶
成長温度（６００℃〜ＳＯＯ℃）から室温に戻した時バ
イメタル効果でウェーハは反り、ウェーハ表面は凹面と
なる。すなわち化合物半導体層には引張り応力が働く。However, when forming a compound semiconductor layer on an St substrate, the coefficient of thermal expansion of S+ and the compound semiconductor is different, and the coefficient of thermal expansion of the compound semiconductor is about twice as large. Therefore, when the crystal growth temperature of a compound semiconductor (600° C. to SOO° C.) is returned to room temperature, the wafer warps due to the bimetallic effect and the wafer surface becomes concave. That is, tensile stress acts on the compound semiconductor layer.
さらに化合物半導体は剪開性が強いためこの引張り応力
でこの層にクラックが発生しやすい。このクラックの問
題のため、Ｓｉ基板上に形成できる化合物半導体層の厚
みに制限があり、この厚みが５μｍを越えると非常にク
ラックが発生しやす（なる。Furthermore, since compound semiconductors have strong shearability, cracks are likely to occur in this layer due to this tensile stress. Because of this problem of cracking, there is a limit to the thickness of a compound semiconductor layer that can be formed on a Si substrate, and if this thickness exceeds 5 μm, cracks are extremely likely to occur.
この厚みの制限のため第２図に示す発光ダイオードの構
造における各層の厚みは、ｎ−ＧａＡｓバッファ層＋２
１は０．２目ｍ 、 ｎ−Ａ４１ｏ、４Ｇａｏ、ａＡｓ
Ｍ（３１は１μｍ１ｐ−Ａｇｏ、ａｓＧａｏ、ａｓ
Ａｓ ）＠ （４１は３μｍであり全体として４．２μ
ｍである。Due to this thickness limitation, the thickness of each layer in the structure of the light emitting diode shown in FIG.
1 is 0.2 m, n-A41o, 4Gao, aAs
M (31 is 1 μm 1p-Ago, asGao, as
As) @ (41 is 3μm and the total is 4.2μ
It is m.
上記のような従来の発光ダイオードでは、ｐ−Ａ１１ｏ
、３ｓＧａｏ−Ａ５ＫＳ 層（４） （７）厚みを充分
ニ大キくトルコトができないため、この層のシート抵抗
を充分に低くすることができず、電流はｐ−電極（６）
の近傍のみを流れるいわゆる電流集中現象が起り、発光
は主としてｐ−電極（６］の真下で起り、発光領域は電
極の下に隠れてしまう。その結果、入力パワーに対する
外部に取り出す光出力の割合、すなわち外部に子効率が
低くなる問題があった。In the conventional light emitting diode as mentioned above, p-A11o
, 3sGao-A5KS layer (4) (7) Since the thickness cannot be made large enough, the sheet resistance of this layer cannot be made low enough, and the current flows through the p-electrode (6).
A so-called current concentration phenomenon occurs that flows only in the vicinity of the p-electrode (6), and light emission mainly occurs directly under the p-electrode (6), and the light-emitting region is hidden under the electrode.As a result, the ratio of the optical output extracted to the outside relative to the input power decreases. In other words, there was a problem that the external child efficiency was low.
この発明は、かかる問題点を解決するためになされたも
ので、電流集中現象をなくして、外部量子効率の高い発
光ダイオードをＳｉ基板上に形成できるようにし、安価
で高効率のＳｉ基板上の発光ダイオードを得ることを目
的としている。This invention was made in order to solve such problems, and it eliminates the current concentration phenomenon, makes it possible to form a light emitting diode with high external quantum efficiency on a Si substrate, and makes it possible to form a light emitting diode with high external quantum efficiency on a Si substrate. The aim is to obtain light emitting diodes.
この発明に係る発光ダイオードは、Ｓｉ基板上のｐｎ化
合物半導体層上に、この化合物半導体よりバンドギャッ
プの小さい半導体層を介して透明導電膜を形成したもの
である。In the light emitting diode according to the present invention, a transparent conductive film is formed on a pn compound semiconductor layer on a Si substrate via a semiconductor layer having a smaller band gap than the compound semiconductor.
この発明においては、Ｓｉ基板上のｐｎ化合物半導体発
光ダイオードは、この化合物半導体よりバンドギャップ
の小さい半導体層を介して透明導電膜が形成されている
ので、透明導電膜とｐ形化合物半導体層との接触抵抗を
下げることができ、さらにｐ層全体のシート抵抗を下−
ｇｆることができるため、電流集中現象が生じず、効率
の高い発光ダイオードが得られる。In this invention, in a pn compound semiconductor light emitting diode on a Si substrate, a transparent conductive film is formed through a semiconductor layer having a smaller band gap than the compound semiconductor, so that the transparent conductive film and the p-type compound semiconductor layer are connected to each other. The contact resistance can be lowered, and the sheet resistance of the entire p layer can also be lowered.
gf, the current concentration phenomenon does not occur and a highly efficient light emitting diode can be obtained.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は上記実施例による発光ダイオードを示す断面図
であり、図において、（υ乃至（４）は前記従来の発光
ダイオードと同一のものであるため説明を省略する。東
は前記ｐ−Ａｇｏ−ａ ５Ｇａｏ、ｍ ｌｌＡｓ層（４
）上に形成され、これよりバンドギャップの小さいｐ形
インジウムガリウムヒ素（ｐ−１ｎＧａＡｓ） Ｄ、σ
νはこのｐ−１ｎＧａＡｓ層上に形成された透明導電膜
であり、例えばインジウムスズ酸化物（Ｉｎｄｉｕｍ
Ｔｉｎ ０ｘｉｄｅ）ＩＴＯ（５ｎ０２＋Ｉｎ１０３
）である。また（６目よ前記透明導電股上に形成された
ｐｆｉ極、（７）は前記ｎ−８ｔ基板（１］の裏面に形
成されたｎ電極である、前記電流集中現象を避けるため
には９層のシート抵抗値としてｌΩ７口以下にする必要
がある。FIG. 1 is a cross-sectional view showing the light emitting diode according to the above embodiment. -a 5Gao, m llAs layer (4
) with a smaller band gap than p-type indium gallium arsenide (p-1nGaAs) D, σ
ν is a transparent conductive film formed on this p-1nGaAs layer, and is made of, for example, indium tin oxide (Indium Tin oxide).
Tin Oxide) ITO (5n02+In103
). In addition, (6) is the PFI electrode formed on the transparent conductive crotch, and (7) is the N electrode formed on the back surface of the N-8T substrate (1). It is necessary to set the sheet resistance value to 1Ω or less.
ｐ−Ａｅｏ４＠Ｇａｎ、ａｓＡａ ％（４１の厚さを３
μｍとしてこの低いシート抵抗値を実現するためにはこ
のｐ鳩のキャリア餉度を１０ ”／ｃｍ”以上と高濃度
にする６装がある。しかし通常の結晶成長や拡散によっ
てこれを達成することは極めて困難である。p-Aeo4@Gan, asAa% (thickness of 41 is 3
In order to achieve this low sheet resistance value in terms of μm, there are six methods that increase the carrier concentration of this p pigeon to a high concentration of 10"/cm" or more. However, it is extremely difficult to achieve this through normal crystal growth or diffusion.
一方ｎ形のＡｔＧａＡｓの移動度はｐ形に比べ１桁以上
間いので、ｐｎを反転した構造すなわちｐ−８１基板上
に順次ｐ−ＡｌＧａＡｓ、 ｎ−ＡｔＧａＡｓを形成し
てｎ ｏｎ ｐ 形の発光ダイオードを作ればｎ形のド
ーピング濃度として１０”／ｃｍ”でよく電流集中現象
は避けらするように考えられるが、実線はｐ−５ｉ基板
とｐ−ＡｔＧａＡｓ”Ｊ’ｉＬ面近傍ｌζおいてＳ蓋基
板より化合物半導体Ａ＃ＧａＡｓにＳｔが自然にドープ
されｎ形の鳩が形成されるためこの構造は実現困難であ
る。On the other hand, the mobility of n-type AtGaAs is more than an order of magnitude higher than that of p-type, so p-AlGaAs and n-AtGaAs are successively formed on a p-81 substrate, which is an inverted p-n structure, to achieve n-on-p type light emission. If a diode is made, the n-type doping concentration of 10"/cm" seems to be enough to avoid the current concentration phenomenon, but the solid line shows the S This structure is difficult to realize because St is naturally doped into the compound semiconductor A#GaAs from the lid substrate, forming an n-type dove.
従ってＳｉ＆板上に化合物半導体の発光ダイオードを形
成するためには、例えばＩＴＯＩ ５ｎ０１＋Ｉｎ２０
３）のような透明導電膜を上側に形成してｐｍのシート
抵抗を下げるのが有効である。なぜかと云えば、ＩＴＯ
の抵抗率は通常ｐ−１０−’Ω・ｃｍであるので、ＩＰ
Ｏの厚みが１μｍの場合、シート抵抗はｌΩ／口となり
、この値は′ＬＵ流集中現象を避けるのに充分低い値で
あるからである。ところが、バンドギャップの大きいｐ
−ＡｊＧａＡｓのような半導体に直接ＩＴＯを形成して
も接触抵抗が高く、ＩＴＯからｐ−ＡｔｌＧａＡｓ層α
Ｄを形成すればこの接触抵抗を下げることがでため、外
部鍵子効率を下げてしまう。しかし、このＩ−の厚さを
１００Å以下と極めで薄くすれば約９０％の光は透過し
実際に使用する上で何ら同Ｅｎはなも１゜
また、Ｓｉ基板は邸伝導率が化合物半導体基板より高い
ため、放熱がよく、より縄出力の発光ダイオードが得ら
１やすい。Therefore, in order to form a compound semiconductor light emitting diode on a Si&plate, for example, ITOI 5n01+In20
3) It is effective to form a transparent conductive film on the upper side to lower the pm sheet resistance. The reason is that ITO
Since the resistivity of is usually p-10-'Ω・cm, IP
When the thickness of O is 1 .mu.m, the sheet resistance is 1.OMEGA./hole, which is a sufficiently low value to avoid the LU flow concentration phenomenon. However, p with a large bandgap
- Even if ITO is formed directly on a semiconductor such as AjGaAs, the contact resistance is high, and the p-AtlGaAs layer α from ITO is
If D is formed, this contact resistance can be lowered, and the efficiency of the external key element will be lowered. However, if the thickness of this I- is made extremely thin to 100 Å or less, about 90% of the light will pass through, and in actual use, the same En will be 1°. Since it is higher than the substrate, heat dissipation is good and it is easier to obtain a light emitting diode with higher output power.
なお、上記実施例ではｎ−５ｉ基板上のｐｎｎ化合物半
体体してＡ６ＧａＡｓを用いた場合を示したが、Ａ＃Ｇ
ａ１ｎＰやＧａＡｓＰであ咳てもよく、上記実施例と同
様の効果がある。In addition, in the above example, a case was shown in which A6GaAs was used as a pnn compound half body on an n-5i substrate, but A#G
A1nP or GaAsP may also be used, and the same effect as in the above embodiment can be obtained.
また、上記実施例ではバンドギャップのエネルギーが小
さい半導体層として１ｎＧａＡｓ 層συを設けた場合
についてホしたが、別やＧｅさら１こはＩｎＡｓＳｂな
どＩＴＯとの接触抵抗が低いいかなる半導体材料でもよ
く、上記実施例と同様の効果がある。Further, in the above embodiment, a case was described in which a 1nGaAs layer συ was provided as a semiconductor layer with a small bandgap energy, but in other cases, the Ge layer 1 may be any semiconductor material that has a low contact resistance with ITO, such as InAsSb. There are effects similar to those of the embodiment.
この発明は以上説明したとおり、Ｓｉ基板上の化合物半
導体発光ダイオードにこの化合物半導体よりバンドギャ
ップの小さい半導体層を介して透明導電膜を形成したの
で電流集中現象がなく高効率の発光ダイオードを化合物
半導体より安価なＳｉ基板上に形成することができる。As explained above, in this invention, a transparent conductive film is formed on a compound semiconductor light emitting diode on a Si substrate via a semiconductor layer with a smaller band gap than the compound semiconductor, so that there is no current concentration phenomenon and a highly efficient light emitting diode is made using a compound semiconductor. It can be formed on a cheaper Si substrate.
また、Ｓｉ基板は熱伝導率が化合物半導体より高いため
放熱がよく、まり高出力の発光ダイオードが得られる効
果がある。Furthermore, since the Si substrate has a higher thermal conductivity than a compound semiconductor, it has good heat dissipation and has the effect of providing a light emitting diode with a higher output.
【図面の簡単な説明】
第１図はこの発明の一実施例によるＳｉ基板上の発光ダ
イオードを示す断面図、第２図は従来のＳｉ基板上の発
光ダイオードを示す断面図である。
図１こおいて（υはｎ−８ｉ基板、（３）はｎ形化合物
半導体層、（４）はｐ形化合物半導体層、０はバンドギ
ャップの小さい半導体層、時は透明導電膜である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view showing a light emitting diode on a Si substrate according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional light emitting diode on a Si substrate. In FIG. 1, (υ is an n-8i substrate, (3) is an n-type compound semiconductor layer, (4) is a p-type compound semiconductor layer, 0 is a semiconductor layer with a small band gap, and sometimes is a transparent conductive film.
Claims (1)
物半導体層、このｎ形化合物半導体層上に設けられこれ
とｐｎ接合を形成するｐ形化合物半導体層、このｐ形化
合物半導体層上に設けられこのｐ形化合物半導体よりバ
ンドギャップの小さい半導体層、およびこのバンドギャ
ップの小さい半導体層上に設けられた透明導電膜を備え
た発光ダイオード。an n-type silicon substrate, an n-type compound semiconductor layer provided on this substrate, a p-type compound semiconductor layer provided on this n-type compound semiconductor layer and forming a pn junction therewith, and a p-type compound semiconductor layer provided on this p-type compound semiconductor layer. A light emitting diode comprising a semiconductor layer having a smaller bandgap than that of the p-type compound semiconductor, and a transparent conductive film provided on the semiconductor layer having the smaller bandgap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63051018A JPH01225178A (en) | 1988-03-03 | 1988-03-03 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63051018A JPH01225178A (en) | 1988-03-03 | 1988-03-03 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01225178A true JPH01225178A (en) | 1989-09-08 |
Family
ID=12875051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63051018A Pending JPH01225178A (en) | 1988-03-03 | 1988-03-03 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01225178A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10256602A (en) * | 1997-03-12 | 1998-09-25 | Sharp Corp | Semiconductor light emitting device |
| JP2003174197A (en) * | 2001-09-27 | 2003-06-20 | Shin Etsu Handotai Co Ltd | Light emitting element and method of manufacturing the same |
| JP2004071896A (en) * | 2002-08-07 | 2004-03-04 | Shin Etsu Handotai Co Ltd | Manufacturing method of light emitting device, and light emitting device |
| JP2004146539A (en) * | 2002-10-23 | 2004-05-20 | Shin Etsu Handotai Co Ltd | Light emitting element and method of manufacturing the same |
| US6995401B2 (en) | 2002-10-23 | 2006-02-07 | Shin-Etsu Handotai Co., Ltd. | Light emitting device and method of fabricating the same |
-
1988
- 1988-03-03 JP JP63051018A patent/JPH01225178A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10256602A (en) * | 1997-03-12 | 1998-09-25 | Sharp Corp | Semiconductor light emitting device |
| JP2003174197A (en) * | 2001-09-27 | 2003-06-20 | Shin Etsu Handotai Co Ltd | Light emitting element and method of manufacturing the same |
| US6787383B2 (en) | 2001-09-27 | 2004-09-07 | Shin-Etsu Hanotai Co., Ltd. | Light-emitting device and method for manufacturing the same |
| JP2004071896A (en) * | 2002-08-07 | 2004-03-04 | Shin Etsu Handotai Co Ltd | Manufacturing method of light emitting device, and light emitting device |
| US7553685B2 (en) | 2002-08-07 | 2009-06-30 | Shin-Etsu Handotai Co., Ltd. | Method of fabricating light-emitting device and light-emitting device |
| JP2004146539A (en) * | 2002-10-23 | 2004-05-20 | Shin Etsu Handotai Co Ltd | Light emitting element and method of manufacturing the same |
| US6995401B2 (en) | 2002-10-23 | 2006-02-07 | Shin-Etsu Handotai Co., Ltd. | Light emitting device and method of fabricating the same |
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