JPH01222092A - Method for galvanizing steel strip - Google Patents
Method for galvanizing steel stripInfo
- Publication number
- JPH01222092A JPH01222092A JP4694388A JP4694388A JPH01222092A JP H01222092 A JPH01222092 A JP H01222092A JP 4694388 A JP4694388 A JP 4694388A JP 4694388 A JP4694388 A JP 4694388A JP H01222092 A JPH01222092 A JP H01222092A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- current density
- cells
- steel strip
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000831 Steel Inorganic materials 0.000 title claims abstract description 25
- 239000010959 steel Substances 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims description 20
- 238000005246 galvanizing Methods 0.000 title abstract 8
- 238000007747 plating Methods 0.000 claims description 145
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 239000000126 substance Substances 0.000 claims description 25
- 238000009713 electroplating Methods 0.000 claims description 21
- 238000012545 processing Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract description 3
- 238000007796 conventional method Methods 0.000 description 7
- 229910019142 PO4 Inorganic materials 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 6
- 239000010452 phosphate Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は複数のめっきセルを順次配設して鋼ストリップ
に電気Ｚｒ）めっきする方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for electroplating steel strip with Zr) by sequentially arranging a plurality of plating cells.
［従来技術］
この種の電気Ｚｎめつき方法においては、その付着量が
非常に重要である。その電気めっき付着量は（電流密度
）×くめつき時間）によって決まる。一般にめっきセル
を複数個配列して鋼ストリップの電気Ｚｎめつきを行う
のような連続電気めっきラインにおいては、Ｔｏｔａｌ
電流制御が行われ、各めっきセルに均一に電流を流し、
各めっきセルでの適正な電流密度を均一に保持している
。[Prior Art] In this type of electric Zn plating method, the amount of Zn deposited is very important. The amount of electroplating deposited is determined by (current density) x plating time). Generally speaking, in a continuous electroplating line where multiple plating cells are arranged to perform electrolytic Zn plating on steel strips, the total
Current control is performed to uniformly flow current to each plating cell,
Appropriate current density is maintained uniformly in each plating cell.
［発明が解決しようとする課題］
しかしながら、上述した連続電気めっきラインにおいて
は、操業中にライン入り側でのルーツ＜−を利用しての
鋼ストリップの溶接や、検査を行う場合があり、又その
出側においてもルーバーを利用しての鋼ストリップの分
割によるコイルへの巻き取りを行う場合がある。この期
間はめつきセルでのライン速度が調節されて各めっきセ
ルの電流密度は同一に変化する。めっき皮膜の特性の一
つであるめっき密着性については初期段階の鋼スｌ−リ
ップ表面のめっき層の形成が非常に重要であるが、ライ
ン速度の変化に対応して電流密度が変化するので安定し
ためつき密着性の皮膜を得ることが困難である。[Problems to be Solved by the Invention] However, in the above-mentioned continuous electroplating line, during operation, steel strips may be welded or inspected using the roots <- on the entry side of the line, or Also on the exit side, the steel strip may be divided into coils using louvers and wound into coils. During this period, the line speed in the plating cells is adjusted so that the current density in each plating cell changes equally. Regarding plating adhesion, which is one of the characteristics of a plating film, the formation of a plating layer on the surface of the steel slip in the initial stage is very important, but since the current density changes in response to changes in line speed, It is difficult to obtain a film with stable adhesiveness.
まためっき皮膜の特性の一つである化成処理性は最終段
階の鋼ストリツプ表面のめつき層の形成が非常に重要で
あるが、ライン速度の変化に対応して電流密度の変化す
るので安定しためつき化成処理性の皮膜を得ることが困
難である。In addition, the formation of a plating layer on the surface of the steel strip in the final stage is very important for chemical conversion treatment, which is one of the characteristics of a plating film, but it is not stable because the current density changes in response to changes in line speed. It is difficult to obtain a film that is resistant to chemical conversion treatment.
この場合特にｐｂ系の不溶性電極の使用においては、め
っき浴に溶出しているＰｂ２＋が低流密度の場合に、め
っき皮膜中に入りやすく、そのためめっき皮膜の化成処
理性を低下させると云われている。In this case, especially when using a Pb-based insoluble electrode, it is said that Pb2+ eluted into the plating bath easily enters the plating film when the flow density is low, thereby reducing the chemical conversion treatability of the plating film. There is.
本発明はこのような従来技術の問題点を解決し、めっき
密着性、化成処理性に優れためつき皮膜を形成できる鋼
ストリップの電気Ｚｎめっき方法を提供することを目的
とする。It is an object of the present invention to solve the problems of the prior art and to provide a method for electrolytic Zn plating of steel strip, which can form a matted film with excellent plating adhesion and chemical conversion treatment properties.
［課題を解決するための手段及び作用］上記目的を達成
するために、本発明では、下記の手段を用いる。[Means and effects for solving the problem] In order to achieve the above object, the present invention uses the following means.
（１）複数のめつきセルを順次配設して鋼ストリップに
電気Ｚｎめっきする方法において、前記めっきセルを初
期段階、中間段階、最終段階のセルに大別し、その初期
段階のめつきセルの電流密度をめっき密着性に適した所
定の電流密度に固定し、電気めっき操業中のライン速度
の変化に対応する電流密度の変化をその他のめつきセル
で対応するものである。(1) In a method of electroplating a steel strip with Zn by sequentially arranging a plurality of plating cells, the plating cells are roughly divided into initial stage, intermediate stage, and final stage cells, and the plating cells at the initial stage are The current density is fixed at a predetermined current density suitable for plating adhesion, and changes in current density corresponding to changes in line speed during electroplating operation are handled in other plating cells.
（２複数のめつきセルを順次配設して鋼ストリップに電
気Ｚｎめっきする方法において、前記めっきセルを初期
段階、中間段階、最終段階のセルに大別し、その最終段
階のめつきセルの電流密度をめっき化成処理性に適した
所定の電流密度に固定し、電気めっき操業中のライン速
度の変化に対応する電流密度の変化をその他のめつきセ
ルで対応するものである。(2) In a method of electroplating a steel strip by sequentially arranging a plurality of plating cells, the plating cells are roughly divided into initial stage, intermediate stage, and final stage cells, and the final stage plating cells are The current density is fixed at a predetermined current density suitable for plating chemical conversion treatment, and changes in current density corresponding to changes in line speed during electroplating operation are handled by other plating cells.
Ｂ） 複数のめ２きセルを順次配設して鋼ストリップに
電気Ｚｎめっきする方法において、前記めっきセルを初
期段階、中間段階、最終段階のセルに大別し、その初期
段階のめっきセルの電流密度をめっき密着性に適した所
定の電流密度に固定するとともに、最終段階のめっきセ
ルの電流密度をめっき化成処理性に適した所定の電流密
度に固定し、電気めっき操業中のライン速度の変化に対
応する電流密度の変化をその他のめっきセルで対応する
ものである。B) In a method of electrolytically plating a steel strip by sequentially arranging a plurality of plating cells, the plating cells are roughly divided into initial stage, intermediate stage, and final stage cells, and the plating cells at the initial stage are The current density is fixed at a predetermined current density suitable for plating adhesion, and the current density of the final stage plating cell is fixed at a predetermined current density suitable for plating chemical conversion processing, and the line speed during electroplating operation is controlled. The other plating cells respond to the change in current density corresponding to the change.
めっき密着性に適しためっき層を得るためには初期段階
のめっきセルの電流密度をめっき密着性に適した所定の
電流密度に固定することが必要である。In order to obtain a plating layer suitable for plating adhesion, it is necessary to fix the current density of the plating cell in the initial stage to a predetermined current density suitable for plating adhesion.
ここにおいて初期段階のめっきセルの電流密度に限定し
たのは、初期段階のめっきセルでは鋼ストリップに直接
にＺｎめっきするので、その付着の状態がそのままその
後のめっき付着に影響を与える。その後の付着はＺｎめ
っきの上にＺｎめっきすることになる。めっき密着性に
適した所定の電流密度はＺｎめっきの場合１０〜４０Ａ
／ｄｍ２であることが好ましい。ＩＯＡ／ｄｍ２未満で
は電解効率が悪く、実操業上好ましくない、４０Ａ／ｄ
ｍ２を超えた場合には密着性が悪くなることによる。め
っき化成処理性に適しためつき層を得るためには最終段
階のめつきセルの電流密度をめっき化成処理性に適した
所定の電流密度に固定することが必要である。ここにお
いて最終段階のめつきセルの電流密度に限定したのは、
最終段階のめつきセルでは鋼ストリップめっき層の表層
部が形成されるので、その付着の状態がそのままその後
の化成処理工程に影響を与える。めっき化成処理性に適
した所定の電流密度はＺｎめっきの場合は６０〜１２０
Ａ／ｄｍ２である。６０Ａ／ｄｆｆ１２未満では化成処
理性が悪くなり、１２０Ａ／ｄｍ２を超えた場合にはそ
の効果が横ばえとなり、それ以上の効果が期待できな、
い。Here, the current density is limited to the plating cell at the initial stage because Zn is directly plated on the steel strip in the plating cell at the initial stage, so the state of Zn deposition directly affects the subsequent plating deposition. Subsequent deposition will result in Zn plating on top of Zn plating. The predetermined current density suitable for plating adhesion is 10 to 40 A for Zn plating.
/dm2 is preferable. If it is less than IOA/dm2, the electrolysis efficiency is poor and it is not preferable for actual operation, 40A/d
This is because if the thickness exceeds m2, the adhesion deteriorates. In order to obtain a plating layer suitable for chemical conversion plating, it is necessary to fix the current density of the plating cell in the final stage to a predetermined current density suitable for chemical conversion plating. Here, the current density of the plating cell in the final stage is limited to:
Since the surface layer of the steel strip plating layer is formed in the plating cell at the final stage, the state of its adhesion directly affects the subsequent chemical conversion treatment process. The predetermined current density suitable for plating chemical conversion treatment is 60 to 120 for Zn plating.
A/dm2. If it is less than 60A/dff12, the chemical conversion treatment properties will be poor, and if it exceeds 120A/dm2, the effect will level out and no further effect can be expected.
stomach.
［発明の実施例］ 以下に本発明について図を参照して説明する。[Embodiments of the invention] The present invention will be explained below with reference to the drawings.
第１図は複数のめつきセルＡを順次配設して鋼ストリッ
プ１に電気Ｚｎめっきする方法を示す模式図である。こ
こにおいて、前記めっきセルのうち最初のめっきセルＡ
１の電流密度をめっき密着性に適した所定の電流密度に
固定し、電気めっき操業中のライン速度の変化に対応す
る電流密度の変化をその他のめつきセルＡ２〜ＡＩＯで
対応して鋼ストリップの電気Ｚｎめっきする。めっきセ
ルＡ１〜Ａ１ｏにはそれぞれ二組の一対の陽極３が鋼ス
トリップ１にたいして一定の間隔をおいて配置されてい
る。めっきセルの入り側と出側にはそれぞれコンダクタ
−ロール２が配置されている。そして帯電した鋼ストリ
ップはめっき液を介して陽極との間で電解反応が行われ
われる。めっきセルにはそれぞれ整流器４を備え、それ
によって電流を調節出来るようになっている。５はその
回路を示す、これらの回路は図示していないＴｏｔａｌ
電流制の回路に接続されている。ここにおいて、本発明
では最初のめっきセルＡ、の電流密度をめっき密着性に
適した所定の電流密度に固定するものである。めっきセ
ルＡ１ではめっき密着性に適した１０〜４０Ａ／ｄＩ１
１２の低電流密度が付与される。FIG. 1 is a schematic diagram showing a method of electroplating a steel strip 1 with Zn by sequentially arranging a plurality of plating cells A. Here, the first plating cell A among the plating cells
1 is fixed at a predetermined current density suitable for plating adhesion, and changes in current density corresponding to changes in line speed during electroplating operation are applied to other plating cells A2 to AIO to control the steel strip. Electrolytic Zn plating. In each of the plating cells A1 to A1o, two pairs of anodes 3 are arranged with respect to the steel strip 1 at regular intervals. Conductor rolls 2 are arranged at the entrance and exit sides of the plating cell, respectively. Then, an electrolytic reaction occurs between the charged steel strip and the anode through the plating solution. Each plating cell is equipped with a rectifier 4 by which the current can be adjusted. 5 shows the circuit, these circuits are not shown in the figure.
Connected to a current-controlled circuit. Here, in the present invention, the current density of the first plating cell A is fixed at a predetermined current density suitable for plating adhesion. In plating cell A1, 10 to 40 A/dI1 suitable for plating adhesion.
A low current density of 12 is applied.
又、化成処理性に優れた皮膜を得るにはめつきセルのう
ち最後のめつきセルＡＩＯを化成処理性に適した所定の
電流密度に固定し、電気めっき操業中のライン速度の変
化に対応する電流密度の変化をその他のめっきセルＡ１
〜Ａ９で対応する。In addition, in order to obtain a film with excellent chemical conversion processability, the last plating cell AIO of the plating cells is fixed at a predetermined current density suitable for chemical conversion processability, and the change in line speed during electroplating operation is adjusted. Other plating cell A1 changes in current density
- Correspond with A9.
化成処理性に適した電流密度は６０〜１２ＯＡ／ｄＩＩ
１２である。Current density suitable for chemical conversion treatment is 60-12OA/dII
It is 12.
又、本発明においては電気めっき操業中のライン速度の
変化があっても最初のめつきセルＡ１と最後のめっきセ
ルＡｌｏの電流密度を所定の値に固定することによって
化成処理性と密着性の優れためっき皮膜を得ることが出
来る。Furthermore, in the present invention, even if the line speed changes during electroplating operation, the current density of the first plating cell A1 and the last plating cell Alo is fixed at a predetermined value, thereby improving chemical conversion treatment properties and adhesion. Excellent plating film can be obtained.
即ち、本発明は、めっき皮膜の形成過程を大別して３段
階とし、めっき初期段階のめつきセルではめっき密着性
に適した１０〜４０Ａ／ｄｍ”の低電流密度でめっきし
、めっき最終段階のめつきセルではめっき化成処理性に
適した６０〜１２０Ａ ／ ｄａ２の高電流密度でめっ
きする。所定の付着量に必要な電流はＴｏｔａｌ電流制
御によって行われるので、ライン速度の変化を生じた場
合には中間段階のめつきセルの電流密度に対応させ、そ
こには初期段階のめっきセルと最終段階のめつきセルに
給電する電流をＴ ｏ ｔ ａ １電流から差し引いた
電流を流すものである。That is, in the present invention, the process of forming a plating film is roughly divided into three stages. In the plating cell in the initial stage of plating, plating is performed at a low current density of 10 to 40 A/dm" suitable for plating adhesion, and in the final stage of plating, In the plating cell, plating is performed at a high current density of 60 to 120 A/da2, which is suitable for plating chemical conversion treatment.The current required for a predetermined deposition amount is controlled by total current control, so if the line speed changes, is made to correspond to the current density of the plating cell in the intermediate stage, and a current obtained by subtracting the current to be supplied to the plating cell in the initial stage and the plating cell in the final stage from the T o ta 1 current is passed therethrough.
第２図は化成処理性としてのリン酸皮膜付着量と電流密
度との関係を示す、６０〜１２０Ａ／ｄｍ２の高電流密
度ではめっき浴でのＰｂ２＋に影響されることなく化成
処理性として優れたリン酸皮膜付着量を得ることが出来
る。Figure 2 shows the relationship between the amount of phosphoric acid film deposited and the current density as a chemical conversion treatment property. At a high current density of 60 to 120 A/dm2, the chemical conversion treatment property was excellent without being affected by Pb2+ in the plating bath. The amount of phosphoric acid film deposited can be obtained.
次に、本発明の方法による実験結果について説明する。Next, experimental results obtained using the method of the present invention will be explained.
（実験例１）
第１表に示しためつき条件により、めっき初期段階を最
初のめっきセルの１槽とし、ライン速度を６０ｍ／分〜
２００ｍ／分に変え、形成されたそれぞれのめっき皮膜
のめつき密着性を試験した。なお、従来技術の方法によ
る場合を比較例とした。この結果を第２表に示す。(Experiment Example 1) According to the plating conditions shown in Table 1, the initial stage of plating is set to one tank of the first plating cell, and the line speed is 60 m/min ~
The speed was changed to 200 m/min, and the plating adhesion of each of the formed plating films was tested. Note that a case using a conventional method was used as a comparative example. The results are shown in Table 2.
第１表
第２表
上表において、ＤＫは電流密度、Ｏは良好、Δはやや不
良、×は不良を示す。In the upper table of Table 1 and Table 2, DK indicates current density, O indicates good, Δ indicates slightly poor, and × indicates poor.
第２表によれば、最初のめっきセルの電流密度を３０Ａ
／ｄｍ”の低電流密度にした本発明ではライン速度が変
化して平均電流密度が高くなってもめっき密着性はすべ
て良好であったのに対し、全めっきセルを同一の電流密
度でめっきした従来法においては５０Ａ／ｄｍ”の電流
密度でのめっき密着性はやや不良となる。According to Table 2, the current density of the first plating cell is 30A.
In the present invention, where the current density was as low as 1/dm'', the plating adhesion was all good even when the line speed was changed and the average current density increased, whereas all the plating cells were plated at the same current density. In the conventional method, plating adhesion at a current density of 50 A/dm'' is somewhat poor.
（実験例２）
第３表
第３表に示した条件により、Ｐｂ２”２〜２．５ｐｐｍ
を含むめっき浴でめっきした。めっき最終段階を最終め
っきセルの１槽とし、その電流密度を１００Ａ／ｄｍ２
にした。この際のライン速度は６０ｍ／分〜２００ｍ／
分に変え、形成されたそれぞれめっき皮膜にリン酸塩皮
膜を付着させ、化成処理性の試験をしな。なお、従来技
術の方法による場合をついても比較例とした。この結果
を第４表に示す。(Experiment Example 2) According to the conditions shown in Table 3, Pb2”2 to 2.5 ppm
Plated in a plating bath containing The final stage of plating is one tank of the final plating cell, and the current density is 100A/dm2.
I made it. The line speed at this time is 60m/min to 200m/min.
After that, a phosphate film was attached to each of the formed plating films and a chemical conversion treatment test was performed. Incidentally, a case using a conventional method was also taken as a comparative example. The results are shown in Table 4.
第４表
表において、ＤＫは電流密度、Ｏは良好、Δはやや不良
、×は不良を示す。In Table 4, DK indicates current density, O indicates good, Δ indicates slightly poor, and × indicates poor.
第４表から明らかなように従来方法による場合は平均電
流密度が５０Ａ／ｄｍ２以下ではリン酸塩皮膜付着量が
不良となるのに対して、本発明では平均電流密度が３０
Ａ／ｄＩ１１”でもリン酸塩皮膜付着量が良好である。As is clear from Table 4, in the case of the conventional method, the amount of phosphate film deposited is poor when the average current density is 50 A/dm2 or less, whereas in the present invention, the average current density is 30 A/dm2 or less.
Even at A/dI of 11", the amount of phosphate film deposited is good.
（実験例３）
第５表
めっき初期段階を最初のめっきセルの１槽とし、その電
流密度を３０−Ａ ／ ｄ１１２にし、めっき最終段階
を最終めっきセルの１槽とし、その電流密度を１００Ａ
／ｄｍ２にした。この際のライン速度は６０ｍ／分〜２
００ｍ／分に変え、形成されたそれぞれめっき皮膜にリ
ン酸塩皮膜を付着させ、密着性と化成処理性の試験をし
た。なお、従来技術の方法による場合を比較例とした。(Experimental Example 3) Table 5 The initial stage of plating is set as one tank of the first plating cell, and the current density is set to 30-A/d112, and the final stage of plating is set as one tank of the final plating cell, and the current density is set as 100A.
/dm2. The line speed at this time is 60 m/min ~ 2
00 m/min, a phosphate film was attached to each of the formed plating films, and adhesion and chemical conversion treatment properties were tested. Note that a case using a conventional method was used as a comparative example.
この結果を第６表に示す。The results are shown in Table 6.
第６表
上表において、ＤＫは電流密度、○は良好、Δはやや不
良、×は不良を示す。In the upper table of Table 6, DK indicates current density, ◯ indicates good, Δ indicates slightly poor, and × indicates poor.
第６表によれば、最終めっきセルの電流密度を１００Ａ
／ｄｍ”の高電流密度にした本発明のリン酸塩付着量は
すべて良好であったのに対し、全めっきセルを同一の電
流密度でめっきした従来法においては、５０Ａ／ｄａ”
以上の電流密度にしないとめっきリン酸塩皮膜付着量は
不良となる。According to Table 6, the current density of the final plating cell is 100A.
The phosphate deposits of the present invention using a high current density of 50 A/dm'' were all good, whereas the conventional method in which all plating cells were plated at the same current density was 50 A/dm''.
If the current density is not higher than this, the amount of plating phosphate film deposited will be poor.
この結果、電流密度を５０Ａ／ｄｍ２以上にすればＰｂ
２＋の影響も回避され、化成処理性のよいめっき皮膜を
形成させることができる。As a result, if the current density is set to 50 A/dm2 or higher, Pb
The influence of 2+ is also avoided, and a plating film with good chemical conversion treatment properties can be formed.
最初のめっきセルの電流密度を３０Ａ／ｄｍ２の低電流
密度にした本発明のめっき密着性はすべて良好であった
のに対し、全めっきセルを同一の電流密度でめっきした
従来法においては５０Ａ／ｄｍ２の電流密度でのめっき
密着性はやや不良となる。The plating adhesion of the present invention, in which the current density of the first plating cell was set to a low current density of 30 A/dm2, was all good, whereas in the conventional method in which all plating cells were plated at the same current density, the current density was 50 A/dm2. The plating adhesion at a current density of dm2 is somewhat poor.
以上のことから化成処理性と密着性とを同時に満足する
めっき皮膜を得た。As a result of the above, a plating film that satisfies both chemical conversion treatability and adhesion was obtained.
実施例では電気Ｚｎめっきについて述べたが、Ｚｎ−Ｎ
ｉ合金めっき等の場合にも本発明の方法が適用できる。In the examples, electrolytic Zn plating was described, but Zn-N
The method of the present invention can also be applied to i-alloy plating and the like.
［発明の効果］
本発明は、複数のめっきセル配設して電気めっきにより
所定の付着量を得る場合に、めっき操業中にライン速度
が変化してもめっき初期段階のめっきセルにおける電流
密度又はめっき最終段階のめっきセルにおける電流密度
、又はその両方が固定されているので、めっき皮膜の化
成処理性又は密着性又はその両方の優れたものを得るこ
とが出来るので、産業上優れた発明である。[Effects of the Invention] The present invention provides an advantage in that when a plurality of plating cells are arranged to obtain a predetermined deposition amount by electroplating, even if the line speed changes during plating operation, the current density or Since the current density or both in the plating cell at the final stage of plating is fixed, it is possible to obtain a plating film with excellent chemical conversion treatment properties and/or adhesion properties, which is an industrially excellent invention. .
第１図は本発明方法を説明するための模式図であり、第
２図は本発明方法によるリン酸皮膜付着量と電流密度の
関係を示す図である。
■１．・鋼ストリップ、２・・・コンダクタ−ロール、
３・・・陽極、４・・・整流器、
Ａｔ〜Ａｌｏ・・・めっきセル。FIG. 1 is a schematic diagram for explaining the method of the present invention, and FIG. 2 is a diagram showing the relationship between the amount of phosphoric acid film deposited and the current density according to the method of the present invention. ■1.・Steel strip, 2... conductor roll,
3... Anode, 4... Rectifier, At~Alo... Plating cell.
Claims (3)
電気Ｚｎめっきする方法において、前記めっきセルを初
期段階、中間段階、最終段階のセルに大別し、その初期
段階のめっきセルの電流密度をめつき密着性に適した所
定の電流密度に固定し、電気めっき操業中のライン速度
の変化に対応する電流密度の変化をその他のめっきセル
で対応することを特徴とする鋼ストリップの電気Ｚｎめ
っき方法。(1) In a method of electroplating a steel strip with Zn by sequentially arranging a plurality of plating cells, the plating cells are roughly divided into initial stage, intermediate stage, and final stage cells, and the current of the plating cell at the initial stage is Electroplating of steel strip characterized in that the density is fixed at a predetermined current density suitable for plating adhesion, and other plating cells respond to changes in current density corresponding to changes in line speed during electroplating operation. Zn plating method.
電気Ｚｎめっきする方法において、前記めっきセルを初
期段階、中間段階、最終段階のセルに大別し、その最終
段階のめっきセルの電流密度をめっき化成処理性に適し
た所定の電流密度に固定し、電気めっき操業中のライン
速度の変化に対応する電流密度の変化をその他のめっき
セルで対応することを特徴とする鋼ストリップの電気Ｚ
ｎめっき方法。(2) In a method of electroplating a steel strip with Zn by sequentially arranging a plurality of plating cells, the plating cells are roughly divided into initial stage, intermediate stage, and final stage cells, and the current of the final stage plating cell is A steel strip electricity supply system characterized in that the density is fixed at a predetermined current density suitable for plating chemical conversion treatment, and other plating cells respond to changes in current density corresponding to changes in line speed during electroplating operation. Z
n plating method.
電気Ｚｎめっきする方法において、前記めっきセルを初
期段階、中間段階、最終段階のセルに大別し、その初期
段階のめっきセルの電流密度をめっき密着性に適した所
定の電流密度に固定するとともに、最終段階のめっきセ
ルの電流密度をめっき化成処理性に適した所定の電流密
度に固定し、電気めっき操業中のライン速度の変化に対
応する電流密度の変化をその他のめっきセルで対応する
ことを特徴とする鋼ストリップの電気Ｚｎめっき方法。(3) In a method of electroplating a steel strip with Zn by sequentially arranging a plurality of plating cells, the plating cells are roughly divided into initial stage, intermediate stage, and final stage cells, and the current of the plating cell at the initial stage is The density is fixed at a predetermined current density suitable for plating adhesion, and the current density of the final stage plating cell is fixed at a predetermined current density suitable for plating chemical conversion processing, and the line speed is changed during electroplating operation. 1. A method for electrolytic Zn plating of steel strip, characterized in that changes in current density corresponding to the changes in current density are handled in other plating cells.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63046943A JP2591025B2 (en) | 1988-02-29 | 1988-02-29 | Electric Zn plating method for steel strip having excellent plating adhesion and / or chemical conversion treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63046943A JP2591025B2 (en) | 1988-02-29 | 1988-02-29 | Electric Zn plating method for steel strip having excellent plating adhesion and / or chemical conversion treatment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01222092A true JPH01222092A (en) | 1989-09-05 |
| JP2591025B2 JP2591025B2 (en) | 1997-03-19 |
Family
ID=12761386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63046943A Expired - Lifetime JP2591025B2 (en) | 1988-02-29 | 1988-02-29 | Electric Zn plating method for steel strip having excellent plating adhesion and / or chemical conversion treatment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2591025B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014114503A (en) * | 2012-11-15 | 2014-06-26 | Jfe Steel Corp | Zinc-based electrogalvanized steel sheet and method for producing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5867886A (en) * | 1981-10-19 | 1983-04-22 | Nippon Steel Corp | Steel article coated with iron-zinc alloy plating layer having concentration gradient and manufacture thereof |
| JPS61170595A (en) * | 1985-01-24 | 1986-08-01 | Nippon Steel Corp | Manufacture of galvanized steel sheet |
-
1988
- 1988-02-29 JP JP63046943A patent/JP2591025B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5867886A (en) * | 1981-10-19 | 1983-04-22 | Nippon Steel Corp | Steel article coated with iron-zinc alloy plating layer having concentration gradient and manufacture thereof |
| JPS61170595A (en) * | 1985-01-24 | 1986-08-01 | Nippon Steel Corp | Manufacture of galvanized steel sheet |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014114503A (en) * | 2012-11-15 | 2014-06-26 | Jfe Steel Corp | Zinc-based electrogalvanized steel sheet and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2591025B2 (en) | 1997-03-19 |
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