JPH01217611A - Constant voltage generating circuit - Google Patents

Constant voltage generating circuit

Info

Publication number
JPH01217611A
JPH01217611A JP63044775A JP4477588A JPH01217611A JP H01217611 A JPH01217611 A JP H01217611A JP 63044775 A JP63044775 A JP 63044775A JP 4477588 A JP4477588 A JP 4477588A JP H01217611 A JPH01217611 A JP H01217611A
Authority
JP
Japan
Prior art keywords
voltage
output
constant voltage
mos
fuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63044775A
Other languages
Japanese (ja)
Inventor
Yasuo Torimaru
鳥丸 安雄
Kazuhiro Yaekawa
八重川 和宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP63044775A priority Critical patent/JPH01217611A/en
Publication of JPH01217611A publication Critical patent/JPH01217611A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Control Of Electrical Variables (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To set the output voltage at a desired level with control applied to the voltage after its generation by connecting one of two ends of each of plural switch elements with which the switching actions are programmable to each connection point of a MOS transistor TR together with the other end of the switch element short-circuited with each other to obtain the constant voltage output at said short circuit part. CONSTITUTION:When a current is supplied from a power supply 1 via a high resistance 2, this current energizes a series circuit containing eight MOS TR7-14 via the programmable elements 15 and 19. Then the voltage of (8XVt) is obtained at an output terminal 20 when the threshold voltage of each MOS TR is set at Vt. If said obtained voltage is lower than a prescribed level, the fuse of the element 19 is cut by a laser trimming device for acquisition of the (9XVt) output. Furthermore the (10XVt) output is obtained with cut of the fuse of the element 18. As a result, the output voltage can be controlled within a range of (8XVt)-(12XVt).

Description

【発明の詳細な説明】 (イ)産業上の利用分野 この発明は、ICやI、SIのような半導体装置の内部
に構成される定電圧発生回路に関し、おもに定電圧源や
入力レベルを比較する基準電圧発生源として用いられる
Detailed Description of the Invention (a) Industrial Application Field This invention relates to constant voltage generation circuits configured inside semiconductor devices such as ICs, Is, and SIs, and is mainly used to compare constant voltage sources and input levels. It is used as a reference voltage generation source.

(ロ)従来の技術 従来のこの種の定電圧発生回路においては、第3図に示
すようにMOSトランジスタ103〜112を直列に接
続し、その両端に高抵抗102を介して電源101から
定電流を通電し、MOSトランジスタ103〜112(
この場合10個)の各しきい値電圧をVtとするとき、
出力端子113からtoxvtの電圧を得るようにして
いる。
(B) Prior art In this type of conventional constant voltage generation circuit, MOS transistors 103 to 112 are connected in series as shown in FIG. The MOS transistors 103 to 112 (
In this case, when each threshold voltage of 10 threshold voltages is Vt,
The voltage of toxvt is obtained from the output terminal 113.

(ハ)発明が解決しようとする課題 しかしながら、MOSトランジスタのしきい値電圧は個
々にバラツキを有し、必ずしも設計値と一致しないため
、この定電圧発生回路から所望の定電圧を精度よく出力
させることが難しいという問題点があった。
(c) Problems to be Solved by the Invention However, since the threshold voltages of MOS transistors vary individually and do not necessarily match the design value, it is necessary to accurately output a desired constant voltage from this constant voltage generation circuit. The problem was that it was difficult to do so.

この発明はこのような事情を考慮してなされたもので、
MoSトランジスタの個々のバラツキを製造後に修正し
、高精度の定電圧を得ることが可能な定電圧発生回路を
提供するものである。
This invention was made in consideration of these circumstances,
The present invention provides a constant voltage generation circuit capable of correcting individual variations in MoS transistors after manufacturing and obtaining a highly accurate constant voltage.

(ニ)課題を解決するためめ手段 この発明は、複数のMOSトランジスタの直列回路を高
抵抗を介して直流電源に接続し、その直列回路の両端に
生ずる電圧降下から定電圧を得るように構成した定電圧
発生回路において、開閉動作がプログラミング可能な複
数の開閉素子を備え、その開閉素子の一端がMOSトラ
ンジスタの各接続点にそれぞれ接続されるとともに他端
が相互に短絡され、その短絡部から定電圧出力を得るこ
とを特徴とする定電圧発生回路である。
(d) Means for Solving the Problems The present invention is configured such that a series circuit of a plurality of MOS transistors is connected to a DC power supply via a high resistance, and a constant voltage is obtained from the voltage drop occurring across the series circuit. The constant voltage generating circuit is equipped with a plurality of switching elements whose opening/closing operations can be programmed, and one end of each switching element is connected to each connection point of a MOS transistor, and the other ends are mutually short-circuited. This is a constant voltage generation circuit characterized by obtaining a constant voltage output.

(ホ)作用 回路の製造後に出力電圧を測定し、出力電圧の過不足に
対応して開閉素子の開閉動作をプログラミングすること
により、通電されるMOSトランジスタ数が加減される
ので、所望の出力電圧を高精度に得ることができる。
(e) By measuring the output voltage after manufacturing the working circuit and programming the opening/closing operation of the switching element according to the excess or deficiency of the output voltage, the number of MOS transistors to be energized can be adjusted, so the desired output voltage can be adjusted. can be obtained with high precision.

(へ)実施例 以下、図面に示す実施例に基づいて、この発明を詳述す
る。これによってこの発明が限定されるものではない。
(f) Examples The present invention will now be described in detail based on examples shown in the drawings. This invention is not limited by this.

第1図はこの発明の一実施例を示す電気回路図であり、
lは電源、2は高抵抗、3〜14は直列接続されたMO
Sトランジスタ、!5〜!9は一端がそれぞれMOSト
ランジスタ3〜7に接続され他端が出力端子20に接続
されたプログラミング可能素子である。この場合、この
プログラミング素子!5〜19には回路製造後にレーザ
トリミング装置にて溶断することが可能なポリシリコン
フユーズを使用している。
FIG. 1 is an electric circuit diagram showing an embodiment of the present invention.
1 is a power supply, 2 is a high resistance, and 3 to 14 are MOs connected in series.
S transistor! 5~! 9 is a programmable element whose one end is connected to each of the MOS transistors 3 to 7 and the other end is connected to the output terminal 20. In this case, this programming element! 5 to 19 use polysilicon fuses that can be cut by a laser trimming device after the circuit is manufactured.

このような構成において、電源lから高抵抗2を介して
電流が供給されると、その電流はプログラミング可能素
子15と19を介してMOSトランジスタ7〜14(8
個)の直列回路に通電され、MOSトランジスタの各し
きい値電圧をVtとすれば、出力端子20には5xvt
の電圧が得られる。この値が所望値よりも低い場合には
、プログラミング可能素子19のヒユーズをレーザトリ
ミング装置にて溶断してやれば、9xVtの出力が得ら
れる。さらにプログラミング可能素子18のヒユーズを
溶断すれば、出力はtoxvtとなる。
In such a configuration, when a current is supplied from the power supply l through the high resistance 2, the current flows through the programmable elements 15 and 19 to the MOS transistors 7 to 14 (8).
If the threshold voltage of each MOS transistor is Vt, then the output terminal 20 has a voltage of 5xvt.
voltage can be obtained. If this value is lower than the desired value, the fuse of programmable element 19 may be blown using a laser trimming device to obtain an output of 9xVt. Furthermore, if the fuse of programmable element 18 is blown, the output becomes toxvt.

このようにして、出力電圧を実測しながらプログラミン
グ可能素子19〜15のヒユーズを順次溶断することに
より、出力電圧がBxvt〜12×VLの範囲で調整が
可能となり、所望値に最も近い出力電圧に設定すること
ができる。
In this way, by sequentially blowing the fuses of programmable elements 19 to 15 while actually measuring the output voltage, the output voltage can be adjusted within the range of Bxvt to 12xVL, and the output voltage is the closest to the desired value. Can be set.

第2図はらの発明の他の実施例を示す電気回路図であり
、31は電源、32は高抵抗、33〜44は直列接続さ
れたMoSトランジスタ、45〜48は一端がそれぞれ
MoSトランジスタ33〜36に接続され他端が出力端
子60に接続されたトランスファーゲート、49〜52
はトランスファーゲート45〜48へのゲート信号ライ
ン、53〜56はEEFROM(又はEPROM)、5
7は書き込み信号ライン、58はクリア信号ライン、5
9は書き込み信号ライン57およびクリア信号ライン5
8に出力するコントロール回路である。
FIG. 2 is an electric circuit diagram showing another embodiment of Hara's invention, in which numeral 31 is a power supply, 32 is a high resistance, 33 to 44 are MoS transistors connected in series, and 45 to 48 are MoS transistors 33 to 48 connected at one end, respectively. transfer gates 49 to 52 connected to 36 and the other end connected to output terminal 60;
are gate signal lines to transfer gates 45 to 48, 53 to 56 are EEFROM (or EPROM), 5
7 is a write signal line, 58 is a clear signal line, 5
9 is a write signal line 57 and a clear signal line 5
This is a control circuit that outputs to 8.

このような構成において、E E P RO?1/I 
53〜56が信号ライン57から書き込み信号を受けて
トランスファーゲート45〜48がすべてON状態にあ
ると、電源31から抵抗32を介してMOSトランジス
タ36〜44(91ml)に通電が行われる。Mo9ト
ランジスタ33〜44の各しきい値電圧をVtとすると
、端子60からは9XVtの出力が得られる。ここで、
この出力電圧が所望値に達していない場合には、コント
ロール回路59によってE E F ROM 56をク
リアし、トランスファーゲート48をOFFにすると、
端子60からの出力電圧は10xVtとなる。このよう
に、出力電圧は、ON状態にあるトランスファーゲー)
4B−40を順次OFFすることにより9XVt〜12
xVtまでの範囲で調整が可能となり、所望値に最も近
い出力電圧を製造後に設定することが可能となる。なお
、第1図に示す実施例の出力電圧の調整は主に製造業者
において行われるが、第2図に示す実施例は使用者によ
っても容易に出力調整することができる。
In such a configuration, E E P RO? 1/I
When transfer gates 53 to 56 receive a write signal from signal line 57 and transfer gates 45 to 48 are all in the ON state, MOS transistors 36 to 44 (91 ml) are energized from power supply 31 via resistor 32. Assuming that each threshold voltage of the Mo9 transistors 33 to 44 is Vt, an output of 9XVt is obtained from the terminal 60. here,
If this output voltage has not reached the desired value, the control circuit 59 clears the EEF ROM 56 and turns off the transfer gate 48.
The output voltage from terminal 60 will be 10xVt. In this way, the output voltage is
By sequentially turning off 4B-40, 9XVt~12
Adjustment is possible within a range up to xVt, and the output voltage closest to the desired value can be set after manufacturing. The output voltage of the embodiment shown in FIG. 1 is mainly adjusted by the manufacturer, but the output voltage of the embodiment shown in FIG. 2 can also be easily adjusted by the user.

(ト)発明の効果 この発明によれば、定電圧発生回路の出力電圧を製造後
に調整して所望の値に設定することが可能となる。
(G) Effects of the Invention According to the present invention, it is possible to adjust the output voltage of the constant voltage generation circuit after manufacture and set it to a desired value.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例を示す電気回路図、第2図
はこの発明の他の実施例を示す電気回路図、第3図は従
来例を示す電気回路図である。 l・・・・・・電源、2・・・・・・高抵抗、3〜I4
・・・・・・MOSトランジスタ、15〜19・・・・
・・プログラミング可能素子、20・・・・・・出力端
子。 第 1 図
FIG. 1 is an electrical circuit diagram showing one embodiment of the present invention, FIG. 2 is an electrical circuit diagram showing another embodiment of the invention, and FIG. 3 is an electrical circuit diagram showing a conventional example. l...Power supply, 2...High resistance, 3~I4
...MOS transistor, 15-19...
...Programmable element, 20...Output terminal. Figure 1

Claims (1)

【特許請求の範囲】 1、複数のMOSトランジスタの直列回路を高抵抗を介
して直流電源に接続し、その直列回路の両端に生ずる電
圧降下から定電圧を得るように構成した定電圧発生回路
において、 開閉動作がプログラミング可能な複数の開閉素子を備え
、その開閉素子の一端がMOSトランジスタの各接続点
にそれぞれ接続されるとともに他端が相互に短絡され、
その短絡部から定電圧出力を得ることを特徴とする定電
圧発生回路。
[Claims] 1. In a constant voltage generation circuit configured to connect a series circuit of a plurality of MOS transistors to a DC power supply via a high resistance, and obtain a constant voltage from a voltage drop occurring across the series circuit. , comprising a plurality of switching elements whose opening/closing operations can be programmed, one end of the switching element being connected to each connection point of the MOS transistor, and the other ends thereof being short-circuited to each other,
A constant voltage generation circuit characterized in that a constant voltage output is obtained from the short circuit part.
JP63044775A 1988-02-26 1988-02-26 Constant voltage generating circuit Pending JPH01217611A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63044775A JPH01217611A (en) 1988-02-26 1988-02-26 Constant voltage generating circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63044775A JPH01217611A (en) 1988-02-26 1988-02-26 Constant voltage generating circuit

Publications (1)

Publication Number Publication Date
JPH01217611A true JPH01217611A (en) 1989-08-31

Family

ID=12700790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63044775A Pending JPH01217611A (en) 1988-02-26 1988-02-26 Constant voltage generating circuit

Country Status (1)

Country Link
JP (1) JPH01217611A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6144248A (en) * 1998-07-16 2000-11-07 Ricoh Company, Ltd. Reference voltage generating circuit having a temperature characteristic correction circuit providing low temperature sensitivity to a reference voltage
JP2010118650A (en) * 2008-10-16 2010-05-27 Semiconductor Energy Lab Co Ltd Semiconductor device and method of manufacturing the same
JP2013073341A (en) * 2011-09-27 2013-04-22 Mitsumi Electric Co Ltd Semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6144248A (en) * 1998-07-16 2000-11-07 Ricoh Company, Ltd. Reference voltage generating circuit having a temperature characteristic correction circuit providing low temperature sensitivity to a reference voltage
JP2010118650A (en) * 2008-10-16 2010-05-27 Semiconductor Energy Lab Co Ltd Semiconductor device and method of manufacturing the same
JP2013073341A (en) * 2011-09-27 2013-04-22 Mitsumi Electric Co Ltd Semiconductor integrated circuit

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