JPH01190729A - Formation of polyimide resin film - Google Patents
Formation of polyimide resin filmInfo
- Publication number
- JPH01190729A JPH01190729A JP1369888A JP1369888A JPH01190729A JP H01190729 A JPH01190729 A JP H01190729A JP 1369888 A JP1369888 A JP 1369888A JP 1369888 A JP1369888 A JP 1369888A JP H01190729 A JPH01190729 A JP H01190729A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- monomer
- polyimide resin
- temperature
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920001721 polyimide Polymers 0.000 title claims description 30
- 239000009719 polyimide resin Substances 0.000 title claims description 28
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000000178 monomer Substances 0.000 claims abstract description 38
- 238000001704 evaporation Methods 0.000 claims abstract description 14
- 150000004985 diamines Chemical class 0.000 claims abstract description 11
- 230000000379 polymerizing effect Effects 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 15
- 238000006116 polymerization reaction Methods 0.000 abstract description 12
- 230000008020 evaporation Effects 0.000 abstract description 10
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 23
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 12
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- YDSWCNNOKPMOTP-UHFFFAOYSA-N mellitic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(O)=O)=C(C(O)=O)C(C(O)=O)=C1C(O)=O YDSWCNNOKPMOTP-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Landscapes
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は例えば半導体素子或いは静電チャックの絶縁膜
、パッシベーション膜、ソフトエラー膜、プラスチック
コンデンサの誘電体膜等に用いるポリイミド樹脂被膜の
形成方法に関する。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a method of forming a polyimide resin film used for, for example, an insulating film, a passivation film, a soft error film, a dielectric film of a plastic capacitor, etc. of semiconductor devices or electrostatic chucks. Regarding.
（従来の技術）
従来、この種ポリイミド樹脂被膜の形成方法としては、
ポリイミド樹脂の原料モノマーを適当な溶媒に溶かして
これを基体上で重合させるいわゆる湿式法、ポリイミド
樹脂ポリマー自体を基体上に蒸着させるいわゆるポリマ
ー蒸着法或いはポリイミド樹脂の原料モノマーをプラズ
マ状態にしてプラズマ中の基体上で重合させるプラズマ
重合法等が知られている。(Prior art) Conventionally, the method for forming this type of polyimide resin film is as follows:
The so-called wet method involves dissolving the raw material monomer of the polyimide resin in a suitable solvent and polymerizing it on the substrate, the so-called polymer vapor deposition method in which the polyimide resin polymer itself is vapor-deposited onto the substrate, or the raw material monomer of the polyimide resin is brought into a plasma state and then placed in a plasma. A plasma polymerization method in which polymerization is performed on a substrate is known.
（発明か解決しようとする課題）
しかしながら、前記従来法は湿式法の場合は極めて薄い
膜が得られ難く、また基体に対するポリイミド樹脂被膜
の密着性が不十分で、しかも溶媒の添加、除去、回収等
の工程が入るために不純物の混入か起りやすいという不
都合を有し、またポリマー蒸着法の場合は解重合と共に
分解が起ったりして重合度が十分でないという不都合を
有し、またプラズマ重合法の場合は原料モノマー自体が
分解したりしてポリイミド樹脂の分子設計が困難で、し
かもポリイミド樹脂が架橋構造を含むために比較的剛直
な被膜しか得られないという不都合を有する。(Problem to be solved by the invention) However, in the conventional method, it is difficult to obtain an extremely thin film in the case of a wet method, and the adhesion of the polyimide resin film to the substrate is insufficient. In addition, in the case of polymer vapor deposition, decomposition occurs along with depolymerization, resulting in an insufficient degree of polymerization. If it is legal, the raw material monomer itself may decompose, making molecular design of the polyimide resin difficult, and furthermore, since the polyimide resin contains a crosslinked structure, only a relatively rigid film can be obtained.
そこで本出願人は先に特開昭８１−７８４６３号公報に
見られるように、例えばピロメリト酸二無水物のような
芳香族酸二無水物と、例えば４．４“−ジアミノジフェ
ニルエーテルのような芳香族ジアミンとを用いて真空中
で両モノマーを蒸発させて、これを基体上で重合させて
ポリイミド樹脂被膜を形成させる方法を提案して前記不
都合を解消した。Therefore, as seen in Japanese Patent Application Laid-open No. 81-78463, the present applicant has proposed that an aromatic acid dianhydride such as pyromellitic dianhydride and an aromatic acid dianhydride such as 4,4"-diaminodiphenyl ether, etc. The above-mentioned disadvantages were solved by proposing a method in which both monomers are evaporated in vacuum using a group diamine, and the monomers are polymerized on a substrate to form a polyimide resin film.
しかし上記両原料モノマーを真空中で蒸発させて基体上
で重合を行なう際は基体を２００℃以上の高温度に加熱
しなければ重合反応が十分に行なわれないため、基体が
例えばアクリル樹脂のように温度１００°Ｃ前後で熱劣
化を生じる材料から成る場合は、その基体上にポリイミ
ド樹脂被膜を形成することが出来ない問題があり、１０
０℃の温度下で重合反応を十分行なうことが出来て、基
体上にポリイミド樹脂被膜を形成する方法が求められて
いた。However, when the above-mentioned raw material monomers are evaporated in vacuum and polymerized on a substrate, the polymerization reaction cannot be carried out sufficiently unless the substrate is heated to a high temperature of 200°C or higher. If the substrate is made of a material that undergoes thermal deterioration at a temperature of around 100°C, there is a problem that a polyimide resin film cannot be formed on the substrate.
There has been a need for a method that allows a sufficient polymerization reaction to be carried out at a temperature of 0° C. and forms a polyimide resin film on a substrate.
本発明は、低温度下で重合を行なわせしめて基体上にポ
リイミド樹脂被膜を形成する方法を提供することを目的
とする。An object of the present invention is to provide a method for forming a polyimide resin film on a substrate by polymerizing at low temperature.
（課題を解決するための手段）
本発明は、真空中でポリイミド樹脂の原料モノマーを蒸
発させて、これを基体上で重合させて樹脂被膜を形成さ
せる方法において、前記ポリイミド樹脂の原料モノマー
がピロメリット酸ジチオ無水物と、ジアミンであること
を特徴とする。(Means for Solving the Problems) The present invention provides a method in which a raw material monomer of a polyimide resin is evaporated in a vacuum and then polymerized on a substrate to form a resin film. It is characterized by being a mellitic acid dithioanhydride and a diamine.
ここでポリイミド樹脂の一方の原料モノマーとしてはピ
ロメリット酸ジチオ無水物が好適であり、また他方の原
料モノマーに用いるジアミンとしては４．４゛−ジアミ
ノジフェニルエーテル、Ｐ−フェニレンジアミンが好適
である。また前記両原料モノマーを蒸発させて基体上で
重合させる際の真空度としては１×１０“２〜１×１０
’ Ｔｏｒｒ程度に設定する。Here, pyromellitic acid dithioanhydride is suitable as one raw material monomer of the polyimide resin, and 4.4'-diaminodiphenyl ether and P-phenylenediamine are suitable as the diamine used in the other raw material monomer. In addition, the degree of vacuum when evaporating the above-mentioned two raw material monomers and polymerizing them on the substrate is 1 x 10"2 to 1 x 10".
' Set to about Torr.
（実施例） 以下添附図面に従って本発明の実施例につき説明する。(Example) Embodiments of the present invention will be described below with reference to the accompanying drawings.
第１図は本発明方法を実施する装置の一例を示すもので
、（１）は処理室を示し、該処理室（１）内を外部の真
空ポンプその他の真空排気系（２）に接−３＝
続すると共に、該処理室（１）内に合成樹脂の蒸着被膜
を形成せしめるべき基体（３）を基体ホルダ（４）によ
って下向きに保持し、該基体（３）を該基体ホルダ（４
）の背面に設けられたヒータ（５）によって所望温度に
加熱できるようにし、かつ基体（３）の前面に設けられ
た膜厚モニター（６）によって基体（３）上に形成され
る被膜厚を測定するようにした。FIG. 1 shows an example of an apparatus for implementing the method of the present invention, in which (1) shows a processing chamber, and the inside of the processing chamber (1) is connected to an external vacuum pump or other evacuation system (2). 3 = Continuing, the substrate (3) on which a synthetic resin vapor-deposited film is to be formed in the processing chamber (1) is held downward by the substrate holder (4), and the substrate (3) is held downward by the substrate holder (4).
) can be heated to a desired temperature by a heater (5) provided on the back of the substrate (3), and a film thickness monitor (6) provided on the front of the substrate (3) can monitor the thickness of the coating formed on the substrate (3). I tried to measure it.
また該処理室（１）内下位に該基体（３）に対向させて
ポリイミド樹脂の原料モノマーａとしてのピロメリット
酸ジチオ無水物、及びモノマーｂとしてのジアミンを蒸
発させるだめのガラス製の蒸発用容器（７） （７）を
設け、該各蒸発用容器（７）をその近傍に設けられた水
晶振動のレートモニター（８）と、ヒータ（９）とによ
って前記原料モノマーａ及びｂの蒸発レートを常に一定
化させる所定温度にコントロール出来るようにした。In addition, a glass evaporator is placed in the lower part of the processing chamber (1) facing the substrate (3) for evaporating pyromellitic acid dithioanhydride as raw material monomer a of the polyimide resin and diamine as monomer b. Containers (7) (7) are provided, and the evaporation rate of the raw material monomers a and b is controlled by a crystal vibration rate monitor (8) and a heater (9) provided in the vicinity of each evaporation container (7). can be controlled to a predetermined temperature that keeps it constant.
図面中、（ＩＯは基体（３）と両蒸発用容器（７）との
間に介在されるシャッタ、（１１は両蒸発用容器（７）
間に設けた仕切板を示す。In the drawing, (IO is a shutter interposed between the base (3) and both evaporation containers (7), (11 is both evaporation containers (7)
The partition plate provided in between is shown.
次に前記装置を用いた縮合重合によるポリイー年− ミド樹脂被膜の形成の１例を示す。Next, polyE by condensation polymerization using the above equipment. An example of forming a mido resin film is shown.
まず、蒸発用容器（７） （７）の一方に原料モノマー
ａとしてピロメリト酸ジチオ無水物と、他方に原料モノ
マーｂ即ちジアミンとして４．４′−ジアミノジフェニ
ルエーテルとを充填し、シャッタ（ＩＯを閉じた状態で
処理室（１）内界囲気ガスの全圧を真空排気系（２）を
介して１ ｘ １Ｏ−５Ｔｏｒｒに設定する。 次いで
、レートモニター（８） （８）で蒸発用容器（７）
（７）からの各原料モノマーａ、ｂの蒸発レートを測定
しなからヒータ（９） （９）によってピロメリト酸ジ
チオ無水物を１７０℃±２℃に、また４、４°−ジアミ
ノジフェニルエーテルを１６０°Ｃ±２℃に加熱する。First, one of the evaporation containers (7) (7) is filled with pyromellitic acid dithioanhydride as raw material monomer a, and the other is filled with raw material monomer b, that is, 4,4'-diaminodiphenyl ether as diamine, and the shutter (IO is closed). In this state, the total pressure of the ambient gas inside the processing chamber (1) is set to 1 x 10-5 Torr via the vacuum evacuation system (2).Then, the rate monitor (8) )
After measuring the evaporation rate of each raw material monomer a and b from (7), pyromellitic acid dithioanhydride was heated to 170°C ± 2°C using a heater (9), and 4,4°-diaminodiphenyl ether was heated to 160°C. Heat to ±2°C.
次いで、原料モノマーａ、ｂが所要温度に達して所要の
蒸発レートが得られた後にシャッタｔｉｏを開け、基体
（３）上に該原料モノマーａ、ｂを６０人／分の析出速
度で厚さ ０．２１．Ｌｍに堆積させ、その後シャッタ
（１０を閉じて該基体（３）をヒータ（５）で温度８０
°Ｃ１１００°Ｃ，１２０°Ｃとした各温度下で加熱し
ながら所定時間保持して該基体（３）上でポリイミドの
重合反応を起こさせて該基体（３）上にポリイミド樹脂
被膜を形成させ、各温度と各熱処理時間とにおけるイミ
ド化率％（Ｉｍｊｄｊ−ｚａＬｉｏｎ ｒａｔｉｏ）を
調べた。その結果は第２図の通りである。Next, after the raw material monomers a and b reach the required temperature and the required evaporation rate is obtained, the shutter tio is opened and the raw material monomers a and b are deposited on the substrate (3) at a deposition rate of 60 people/min to a thickness. 0.21. After that, the shutter (10) is closed and the substrate (3) is heated to a temperature of 80°C using a heater (5).
The polymerization reaction of the polyimide is caused on the substrate (3) by heating at each temperature of 1100°C and 120°C for a predetermined period of time to form a polyimide resin coating on the substrate (3). The imidization ratio % (Imjdj-zaLion ratio) at each temperature and each heat treatment time was investigated. The results are shown in Figure 2.
尚、原料モノマーａＳｂは化学量論的に被膜が形成され
るように蒸発レートの調整によって１＝１のモル比で蒸
発するようにした。The raw material monomer aSb was evaporated at a molar ratio of 1=1 by adjusting the evaporation rate so that a film was formed stoichiometrically.
得られたポリイミド樹脂被膜は緻密且つ高純度で基体に
対する密着性も良好であり、また、電気絶縁性、耐薬品
性、耐熱性等の諸物性も従来の湿式法によるものに比べ
て何ら遜色は無かった。The obtained polyimide resin film is dense and highly pure, and has good adhesion to the substrate, and its physical properties such as electrical insulation, chemical resistance, and heat resistance are in no way inferior to those made by conventional wet methods. There wasn't.
また両原料モノマーａ、ｂを従来における温度２００℃
以上のような高温度ではなく、温度８０°Ｃないし１０
０℃のような低温度で重合させることが出来るので、熱
劣化温度か１００℃前後のアクリル樹脂等から成る基体
上にもポリイミド樹脂被膜を形成することか出来る。In addition, both raw material monomers a and b were heated at the conventional temperature of 200°C.
Rather than the high temperatures mentioned above, the temperature is between 80°C and 10°C.
Since polymerization can be carried out at a low temperature such as 0°C, a polyimide resin film can also be formed on a substrate made of acrylic resin or the like whose thermal deterioration temperature is around 100°C.
前記実施例と比較するために、従来法と同様の原料上ツ
マ−ａに芳香族酸二無水物としてピロメリット酸二無水
物と、原料モノマーｂに芳香族ジアミンとして４．４°
−ジアミノジフェニルエーテルとを用いて前記実施例と
同一装置および同一方法により基体（３）上に両モノマ
ーを厚さ ０．２ｇｍに堆積させ、基体（３）をヒータ
（５）で温度１５０℃、１８０℃、１９０℃、２００℃
とした各温度下で加熱しなから所定時間保持して基体（
３）上でポリイミドの重合反応を起こさせて基体（３）
上にポリイミド樹脂被膜を形成させ、各温度と各熱処理
時間とにおけるイミド化率％（Ｉｍｊｄｉｚａｔｉｏｎ
ｒａｔｉｏ）を調べた。その結果は第３図の通りであ
る。In order to compare with the above example, the same raw materials as in the conventional method were used; pyromellitic dianhydride was used as the aromatic acid dianhydride in the raw material a, and 4.4° was added as the aromatic diamine in the raw material monomer b.
-diaminodiphenyl ether to a thickness of 0.2 gm on the substrate (3) using the same equipment and the same method as in the previous example, and the substrate (3) was heated to a temperature of 150°C and 180°C using a heater (5). ℃, 190℃, 200℃
The substrate (
3) A polymerization reaction of polyimide is caused on the substrate (3).
A polyimide resin film was formed on the top, and the imidization rate (%) at each temperature and each heat treatment time was determined.
ratio) was investigated. The results are shown in Figure 3.
第２図および第３図に示すように原料モノマーとしてピ
ロメリット酸ジチオ無水物と、ジアミンとを用いた実施
例は、原料モノマーとして芳香族酸二無水物と、ジアミ
ンとを用いた比較例（従来法）に比して温度８０°Ｃな
いし１００℃のような低温度下において重合反応が十分
行なわれていることが確認された。As shown in FIGS. 2 and 3, the examples using pyromellitic acid dithioanhydride and diamine as raw material monomers are different from the comparative examples using aromatic acid dianhydride and diamine as raw material monomers. It was confirmed that the polymerization reaction was sufficiently carried out at a lower temperature of 80° C. to 100° C. compared to the conventional method.
（発明の効果）
このように本発明によるときは、真空中でポリイミド樹
脂の原料モノマーを蒸発させて、これを基体上で重合さ
せることによってポリイミド樹脂被膜を形成するために
、不純物やモノマー分解物を含まない純粋且つ均一なモ
ノマー蒸気が基体上に順次衝突して該基体上で重合する
こととなり、緻密で高純度且つ均一な膜厚のポリイミド
樹脂被膜を基体に対する良好な密着性をもって、しかも
極めて薄い膜を始め所望膜厚に容易に形成でき、また原
料モノマーとしてピロメリット酸ジチオ無水物と、ジア
ミンとを用いたから、原料モノマーの重合を８０℃ない
し１、００℃の温度下で行なうことが出来るので、従来
高温度重合のために被膜を形成することが出来なかった
熱劣化温度が１００℃前後の材料から成る基体上にもポ
リイミド樹脂被膜を形成することか出来る等の効果を有
する。(Effects of the Invention) According to the present invention, in order to form a polyimide resin film by evaporating the raw material monomer of polyimide resin in vacuum and polymerizing it on the substrate, impurities and monomer decomposition products are removed. The pure and uniform monomer vapor containing no monomer impinges on the substrate one after another and polymerizes on the substrate, forming a dense, highly pure, and uniformly thick polyimide resin coating with good adhesion to the substrate and extremely high adhesion. It can be easily formed to a desired thickness including a thin film, and since pyromellitic acid dithioanhydride and diamine are used as the raw material monomers, the polymerization of the raw material monomers can be carried out at a temperature of 80°C to 1,00°C. Therefore, it is possible to form a polyimide resin film even on a substrate made of a material whose thermal deterioration temperature is around 100° C., which previously could not be formed due to high temperature polymerization.
第１図は本発明ポリイミド樹脂被膜の形成刃法を実施す
るための装置の一例の載断面図、第２図は本発明実施例
におけるイミド化率を示す図、第３図は従来例における
イミド化率を示す図である。Figure 1 is a cross-sectional view of an example of an apparatus for carrying out the blade method for forming a polyimide resin film of the present invention, Figure 2 is a diagram showing the imidization rate in the example of the present invention, and Figure 3 is a diagram showing the imidization rate in the conventional example. FIG.
Claims (1)
これを基体上で重合させて樹脂被膜を形成させる方法に
おいて、前記ポリイミド樹脂の原料モノマーがピロメリ
ット酸ジチオ無水物と、ジアミンであることを特徴とす
るポリイミド樹脂被膜の形成方法。By evaporating the raw material monomer of polyimide resin in a vacuum,
A method for forming a polyimide resin film by polymerizing it on a substrate, wherein the raw material monomers of the polyimide resin are pyromellitic dithioanhydride and diamine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63013698A JPH0776416B2 (en) | 1988-01-26 | 1988-01-26 | Method for forming polyimide resin coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63013698A JPH0776416B2 (en) | 1988-01-26 | 1988-01-26 | Method for forming polyimide resin coating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01190729A true JPH01190729A (en) | 1989-07-31 |
| JPH0776416B2 JPH0776416B2 (en) | 1995-08-16 |
Family
ID=11840417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63013698A Expired - Lifetime JPH0776416B2 (en) | 1988-01-26 | 1988-01-26 | Method for forming polyimide resin coating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0776416B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006089681A (en) * | 2004-09-27 | 2006-04-06 | Ulvac Japan Ltd | Method for forming sulfonated polyimide resin film and apparatus for forming the same |
| JP2011124228A (en) * | 2009-12-14 | 2011-06-23 | Samsung Mobile Display Co Ltd | Manufacturing method of organic light-emitting device, and organic light-emitting device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6178463A (en) * | 1984-09-25 | 1986-04-22 | Ulvac Corp | Formation of synthetic resin film |
-
1988
- 1988-01-26 JP JP63013698A patent/JPH0776416B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6178463A (en) * | 1984-09-25 | 1986-04-22 | Ulvac Corp | Formation of synthetic resin film |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006089681A (en) * | 2004-09-27 | 2006-04-06 | Ulvac Japan Ltd | Method for forming sulfonated polyimide resin film and apparatus for forming the same |
| JP4732729B2 (en) * | 2004-09-27 | 2011-07-27 | 株式会社アルバック | Film formation method of sulfonated polyimide resin |
| JP2011124228A (en) * | 2009-12-14 | 2011-06-23 | Samsung Mobile Display Co Ltd | Manufacturing method of organic light-emitting device, and organic light-emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0776416B2 (en) | 1995-08-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4624867A (en) | Process for forming a synthetic resin film on a substrate and apparatus therefor | |
| JPS6178463A (en) | Formation of synthetic resin film | |
| JP2006225565A (en) | Method for forming organic piezo- and pyro-electric film membrane | |
| JP3231373B2 (en) | Apparatus and method for forming synthetic resin film | |
| JPH01190729A (en) | Formation of polyimide resin film | |
| JP2821907B2 (en) | Method of forming polyimide resin coating | |
| JPH0718000B2 (en) | Method for forming synthetic resin film | |
| JPH05247631A (en) | Method and device for forming synthetic-resin coating film | |
| Wang et al. | Piezoelectric and dielectric properties of aromatic polyureas synthesized by vapor deposition polymerization | |
| JPS60197730A (en) | Formation of polyimide film | |
| JPS63166961A (en) | Formation of polyimide resin coated film | |
| JPH0445259A (en) | Film forming device | |
| JPH06116409A (en) | Formation of synthetic resin coating film | |
| JP2821902B2 (en) | Method of forming low dielectric constant polyimide coating | |
| JPH08176803A (en) | Production of molecular-oriented organic film | |
| JPH0762236B2 (en) | Method for forming synthetic resin film | |
| JPS63166962A (en) | Formation of polyamide resin coated film | |
| JPH04341559A (en) | Production of synthetic resin coating film | |
| JP2002285320A (en) | Method for depositing organic high polymeric thin film | |
| JPH0260936A (en) | Production of polymer film | |
| JPH01313520A (en) | Preparation of thin film of polymer | |
| JP2001206947A (en) | Method of forming polyimide resin membrane | |
| JPS6362869A (en) | Formation of coated film of synthetic resin | |
| JPH07102087A (en) | Production of high-birefringence polyimide film | |
| JPH01116063A (en) | Manufacture of high polymer film |