JPH01188684A - Evacuation device for chemical dry etching - Google Patents
Evacuation device for chemical dry etchingInfo
- Publication number
- JPH01188684A JPH01188684A JP1039488A JP1039488A JPH01188684A JP H01188684 A JPH01188684 A JP H01188684A JP 1039488 A JP1039488 A JP 1039488A JP 1039488 A JP1039488 A JP 1039488A JP H01188684 A JPH01188684 A JP H01188684A
- Authority
- JP
- Japan
- Prior art keywords
- evacuation
- cooling trap
- dry etching
- main valve
- trap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000126 substance Substances 0.000 title claims abstract description 18
- 238000001312 dry etching Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000001816 cooling Methods 0.000 claims abstract description 20
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims 1
- 239000000843 powder Substances 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 239000003921 oil Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 5
- 239000003518 caustics Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000010687 lubricating oil Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 108010063955 thrombin receptor peptide (42-47) Proteins 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、反応性ガスを用いるタンタルのケミカルドラ
イエツチング用真空排気装置番ご関1−る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vacuum evacuation system for chemical dry etching of tantalum using a reactive gas.
従来のタンタルのケミカルドライエツチング用真空排気
装置は、第3図に示されるように、ブースターポンプ4
、油回転ポンプ7a、及び前記ブースターポンプ4の前
段にケミカルドライエツチングプロセスで生成された反
応生成物を捕捉するための冷却トラップ3により構成さ
れ、主バルブ2aの開閉によりプロセス前及びプロセス
中の真空排気を行っていた。A conventional vacuum evacuation device for chemical dry etching of tantalum has a booster pump 4 as shown in FIG.
, an oil rotary pump 7a, and a cooling trap 3 for capturing reaction products generated in the chemical dry etching process upstream of the booster pump 4. Vacuum is maintained before and during the process by opening and closing the main valve 2a. Exhaust air was being carried out.
前記ケミカルドライエツチングプロセスは、弗素系ガス
をプラズマ反応炉で、解離するととによって生成された
弗素ラジカルと、基板11に成膜された被エツチング物
質であるタンタルとの化学反応により、弗化タンタルと
してタンタルを取り込むことにより行われる。生成され
た弗化タンタルは、真空ポンプにより排気される。排気
された弗化タンタルは、排気系内で蓄積されると粉体に
なりやすい。この粉体が油回転ポンプ7aの潤滑油に紛
れ込み前記潤滑油の劣化を早めるため、冷却トラップ3
により前記弗化タンタルを捕捉していた。In the chemical dry etching process, a fluorine-based gas is dissociated in a plasma reactor, and tantalum fluoride is formed by a chemical reaction between the generated fluorine radicals and tantalum, which is a material to be etched, formed on the substrate 11. This is done by incorporating tantalum. The generated tantalum fluoride is evacuated by a vacuum pump. Exhausted tantalum fluoride tends to become powder if it accumulates in the exhaust system. Since this powder mixes into the lubricating oil of the oil rotary pump 7a and accelerates the deterioration of the lubricating oil, the cooling trap 3
The tantalum fluoride was captured.
しかし、前述の従来技術では、真空槽1内のプロセス前
の真空排気工程において、冷却トラップ3の摂氏0度以
下に冷却されているトラップ面に、大気中に含まれてい
る水蒸気や真空槽1内の器壁に吸着している水分が多量
に水着する。そのため、すてにトラップ面に捕捉されて
いる弗化タンタルと氷着した水との反応により生成され
た腐食性物質である弗酸か、真空排気系内の腐食を早め
たり、装置のメンテナンスにおいて作業者へ危険をおよ
ぼすという問題点を存していた。又、生成された弗酸は
、飽和蒸気圧か高いので排気系内で気化しやすく、排気
系の排気性能を不安定にし、エソヂングプロセスの品質
上に影響を及ぼすという問題点も有していた。However, in the above-mentioned conventional technology, in the vacuum evacuation step before the process in the vacuum chamber 1, water vapor contained in the atmosphere and the vacuum chamber 1 A large amount of water adsorbs to the inner vessel wall and becomes a swimsuit. Therefore, hydrofluoric acid, a corrosive substance produced by the reaction between tantalum fluoride trapped on the trap surface and frozen water, may accelerate corrosion within the vacuum pumping system and may be used during equipment maintenance. There was a problem in that it posed a danger to workers. In addition, the produced hydrofluoric acid has a high saturated vapor pressure, so it easily vaporizes in the exhaust system, making the exhaust performance of the exhaust system unstable and affecting the quality of the esodizing process. Ta.
そとで本発明は、このような問題点を解決する、もので
、その目的とする所は、冷却トラップで生成される弗酸
などの腐食性物質の生成を抑制する真空排気装置を提供
することにある。The present invention is intended to solve these problems, and its purpose is to provide a vacuum evacuation device that suppresses the production of corrosive substances such as hydrofluoric acid produced in cooling traps. There is a particular thing.
本発明のタンタルのケミカルドライエツチング用真空排
気装置は、反応性ガスを用いるケミカルドライエツチン
グにより生成された反応生成物を捕捉する冷却トラップ
を有する真空排気装置において、前記冷却トラップを回
避して真空排気を行うプロセス前用排気系と、エツチン
グプロセス中の真空排気を行うプロセス用排気系の排気
経路を併設してなることを特徴とする。The vacuum evacuation apparatus for chemical dry etching of tantalum of the present invention is a vacuum evacuation apparatus having a cooling trap for trapping reaction products generated by chemical dry etching using a reactive gas, in which evacuation is performed while avoiding the cooling trap. The present invention is characterized in that an exhaust route is provided for a pre-process exhaust system that performs evacuation and a process exhaust system that performs vacuum evacuation during the etching process.
本発明の上記の構成によれば、真空槽内のプロセス前に
行う真空排気工程において、大気中に存在する水蒸気や
、真空槽内の器壁に吸着していた水分を、プロセス前用
排気系を用いて排気することにより、冷却トラップで氷
着させることなく、充分除去することか出来るので、す
でに吸着している反応生成物と氷着した水の反応による
腐食性物質の生成を抑制する。According to the above configuration of the present invention, in the vacuum evacuation process performed before the process in the vacuum chamber, the pre-process exhaust system removes water vapor present in the atmosphere and moisture adsorbed on the walls of the vacuum chamber. By exhausting the water using a cooling trap, it is possible to sufficiently remove the water without causing ice formation, thereby suppressing the formation of corrosive substances due to the reaction between already adsorbed reaction products and frozen water.
以下に、本発明の真空排気装置の詳細を図示した実施例
に基づき説明する。EMBODIMENT OF THE INVENTION Below, the detail of the evacuation apparatus of this invention is demonstrated based on the Example which illustrated.
第1図は、本発明の真空排気装置の一実施例を示すもの
であって、ケミカルドライエツチングを行うための基板
11を設置する真空槽1に、油回転ポンプ7aと主バル
ブ2bから構成されるプロセス前用排気系と、ケミカル
トライエツチングプロセス時に用いられる主バルブ2a
、冷却トラップ3、ブースターポンプ4、粉体トラップ
5、油回転ポンプ7aから構成されるプロセス用排気系
か並設されている。FIG. 1 shows an embodiment of the vacuum evacuation system of the present invention, which includes a vacuum chamber 1 in which a substrate 11 for chemical dry etching is installed, an oil rotary pump 7a and a main valve 2b. A pre-process exhaust system and a main valve 2a used during the chemical tri-etching process.
, a cooling trap 3, a booster pump 4, a powder trap 5, and an oil rotary pump 7a.
新たな基板11を設置したあとの真空槽1内は、水蒸気
を含んだ大気か充滴している。この大気を所定の圧力ま
て粗引きするプロセス前の真空排気工程は、プロセス前
用排気経路の主バルブ2bを開き、油回転ポンプ7bを
用いて行う。本実施例では、圧力IPa程度まで真空排
気を行った後、主バルブ2bを閉じ、主バルブ2aを開
いてプロセス用排気経路に切り替え、更に圧力0IPa
程度まて真空排気をし、前述のケミカルトライエツチン
グプロセスを行った。After the new substrate 11 is installed, the inside of the vacuum chamber 1 is filled with air containing water vapor. A pre-process vacuum evacuation step in which the atmosphere is roughly pumped to a predetermined pressure is performed by opening the main valve 2b of the pre-process evacuation route and using the oil rotary pump 7b. In this example, after evacuation is performed to a pressure of about IPa, the main valve 2b is closed, the main valve 2a is opened to switch to the process exhaust path, and then the pressure is reduced to 0 IPa.
After evacuating to a certain degree, the chemical tri-etching process described above was performed.
第2図は、本発明の真空排気装置の別の一実施例を示す
ものであって、ケミカルトライエツチングプロセスを行
うための真空槽1と、真空槽1から主バルブ2bを介し
て油回転ポンプ7aと直結しているプロセス前用排気経
路と、ケミカルドライエツチングプロセス時に用いるブ
ースターポンプ4、油回転ポンプ7 a %反応性生物
を捕捉するための冷却トラップ3、粉体トラップ5、及
び主バルブ2a、補助バルブ6よりなるプロセス用排気
経路から構成されている。真空槽1内を大気から粗引き
するプロセス前の真空排気工程は、主バルブ2aと補助
パルプ6を閉めた状態で、主バルブ2bを開けるととに
より行い、水分の多い大気を冷却トラップ3、粉体トラ
ップ5を介することすく除去している。ここでもプロセ
ス前用排気経路を用いた粗引きは、圧力IPa程度まで
行い、その後プロセス用排気経路に切り替えケミカルド
ライエツチングプロセスを行った。その結果、ポンプ排
気性能は安定し、油回転ポンプの潤滑浦の劣化もなくな
った。FIG. 2 shows another embodiment of the vacuum evacuation apparatus of the present invention, which includes a vacuum chamber 1 for performing a chemical trietching process, and an oil rotary pump connected from the vacuum chamber 1 via a main valve 2b. 7a, a booster pump 4 used during the chemical dry etching process, an oil rotary pump 7a, a cooling trap 3 for trapping reactive organisms, a powder trap 5, and a main valve 2a. , an auxiliary valve 6, and a process exhaust path. The vacuum evacuation step before the process of roughly evacuation of the air inside the vacuum chamber 1 is performed by opening the main valve 2b with the main valve 2a and the auxiliary pulp 6 closed, and draining the moisture-rich air into the cooling trap 3, The powder is removed through the powder trap 5. Here too, rough evacuation using the pre-process exhaust path was carried out to a pressure of about IPa, and then the chemical dry etching process was performed by switching to the process exhaust path. As a result, the pump exhaust performance became stable and the oil rotary pump's lubrication wells did not deteriorate.
本発明のプロセス前用排気経路における真空ポンプは、
粗引き用真空ポンプのみならず、本引き用高真空ポンプ
を装備した真空排気装置であっても構わない。The vacuum pump in the pre-process exhaust path of the present invention is
A vacuum evacuation device equipped not only with a rough vacuum pump but also with a high vacuum pump for main vacuum pumping may be used.
以上述べた発明によれば、基板交換後の大気から粗引き
するプロセス前の真空排気工程において、水分の多量に
含まれた大気か冷却トラップ内を通過することかないの
て、冷却トラップに吸着している反応生成物と水分の反
応による腐食性物質の生成を抑制することか出来るとい
う効果ををする。よって、排気装置内の腐食や、装置メ
ンテナンス時の人体への危険を防止できると共に、排気
系の排気性能を安定することが出来る。又、冷却トラッ
プに吸着する水分量を減少させることにより、その分反
応生成物の捕捉量を多くすることか出来、油回転ポンプ
や潤滑油の劣化防止、及び冷却トラップの再生サイクル
時間延長の効果も有する。According to the invention described above, in the vacuum evacuation step before the rough evacuation process from the atmosphere after substrate replacement, the atmosphere containing a large amount of moisture does not pass through the cooling trap and is adsorbed to the cooling trap. This has the effect of suppressing the formation of corrosive substances due to the reaction between reaction products and moisture. Therefore, corrosion within the exhaust system and danger to the human body during equipment maintenance can be prevented, and the exhaust performance of the exhaust system can be stabilized. In addition, by reducing the amount of water adsorbed in the cooling trap, the amount of reaction products captured can be increased accordingly, which has the effect of preventing deterioration of the oil rotary pump and lubricating oil and extending the regeneration cycle time of the cooling trap. It also has
第1図は本発明のケミカルドライエツチングの真空排気
装置の一実施例を示す構成図。
第2図は本発明のケミカルドライエツチングの真空排気
装置の一実施例を示す構成図。
第3図は従来の真空排気装置を示す構成図。
1・・・真空槽
2a、2b・・主バルブ
3・・冷却トラップ
4・・・ブースターポンプ
5・・・粉体トラップ
6 ・補助バルブ
7a、7b・・・油回転ポンプ
以 上
出願人 セイコーエプソン株式゛会社
第 1 (2)
冗 2 M
第 3 図FIG. 1 is a configuration diagram showing an embodiment of a chemical dry etching vacuum evacuation apparatus according to the present invention. FIG. 2 is a configuration diagram showing an embodiment of the chemical dry etching vacuum evacuation apparatus of the present invention. FIG. 3 is a configuration diagram showing a conventional vacuum evacuation device. 1... Vacuum chambers 2a, 2b... Main valve 3... Cooling trap 4... Booster pump 5... Powder trap 6 - Auxiliary valves 7a, 7b... Oil rotary pump or above Applicant: Seiko Epson Co., Ltd. Company No. 1 (2) 2 M Figure 3
Claims (1)
グプロセスにより生成された反応生成物を捕捉する冷却
トラップを有する真空排気装置において、前記冷却トラ
ップを回避して真空排気を行うプロセス前用排気系と、
前記ケミカルエッチングプロセス中の真空排気を行うプ
ロセス用排気系の排気経路を並設してなることを特徴と
するのケミカルドライエッチング用真空排気装置。In a vacuum exhaust system having a cooling trap that captures reaction products generated by a tantalum chemical dry etching process using a reactive gas, a pre-process exhaust system that performs vacuum exhaust while avoiding the cooling trap;
A vacuum evacuation apparatus for chemical dry etching, characterized in that the evacuation routes of process evacuation systems for performing evacuation during the chemical etching process are arranged in parallel.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1039488A JPH01188684A (en) | 1988-01-20 | 1988-01-20 | Evacuation device for chemical dry etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1039488A JPH01188684A (en) | 1988-01-20 | 1988-01-20 | Evacuation device for chemical dry etching |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01188684A true JPH01188684A (en) | 1989-07-27 |
Family
ID=11748907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1039488A Pending JPH01188684A (en) | 1988-01-20 | 1988-01-20 | Evacuation device for chemical dry etching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01188684A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0433654U (en) * | 1990-07-09 | 1992-03-19 |
-
1988
- 1988-01-20 JP JP1039488A patent/JPH01188684A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0433654U (en) * | 1990-07-09 | 1992-03-19 |
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