JPH01186619A - Method and equipment for removing organic matter by decomposition - Google Patents

Method and equipment for removing organic matter by decomposition

Info

Publication number
JPH01186619A
JPH01186619A JP62250207A JP25020787A JPH01186619A JP H01186619 A JPH01186619 A JP H01186619A JP 62250207 A JP62250207 A JP 62250207A JP 25020787 A JP25020787 A JP 25020787A JP H01186619 A JPH01186619 A JP H01186619A
Authority
JP
Japan
Prior art keywords
ozone
organic matter
reaction chamber
decomposition
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62250207A
Other languages
Japanese (ja)
Inventor
Toru Nakanishi
徹 中西
Sho Katagiri
片桐 祥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HOUKOU SANGYO KK
Original Assignee
HOUKOU SANGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HOUKOU SANGYO KK filed Critical HOUKOU SANGYO KK
Priority to JP62250207A priority Critical patent/JPH01186619A/en
Publication of JPH01186619A publication Critical patent/JPH01186619A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To remove an organic matter by decomposition without wasting time and to avoid generation of residual ion, by decomposing a carrier of the organic matter by ozone or (ozone and ultraviolet rays) by heating and by judging the finish of removal of the organic matter by the CO2 density. CONSTITUTION:A carrier 13 of an organic matter to be removed by decomposition is placed in an airtight reaction chamber 4. At the same time with measuring the CO2 density of the reaction chamber 4, the organic matter is decomposed by ozone or (ozone and ultraviolet rays) by heating. The CO2 density coming below predetermined value tells the finish of removal of the organic matter. This is because an ozone density measuring equipment 8, a CO2 density measuring equipment 9, an ozone decomposition equipment 10 and an exhaust pump 11 are connected in series between the reaction chamber 4 and an ozone decomposition equipment 5. By this method, an organic matter can be removed without wasting time and generation of residual ion is avoided.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は有機物担体上の有機物を該担体から分解除去す
る方法及び装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method and apparatus for decomposing and removing organic substances on an organic substance carrier from the carrier.

〔従来の技術〕[Conventional technology]

f機物担体上から有機物をオゾン又は(オゾン及び紫外
線)にて分解除去する場合として、例えば、ダイオード
、トランジスタ、半導体IC等の半導体製品を作るにあ
たり、半導体ウェハに不純物を添加する場所や電極を設
ける場所等を形成するために、該ウェハ表面の酸化膜上
にホトレジスト(感光性有機物)膜を形成し、該ホトレ
ジスト上にパターン形成フィルムを配置し、その上から
露光して所定パターンを焼き付け、次いで現像処理し、
ホトレジストが無くなって露出した酸化膜部分をエツチ
ング処理で除去し、そのあと残ったホトレジストを加熱
下にオゾン又は(オゾン及び紫外線)にて除去する場合
を挙げることができる。
f When organic substances are decomposed and removed from organic material carriers using ozone or (ozone and ultraviolet rays), for example, when manufacturing semiconductor products such as diodes, transistors, and semiconductor ICs, it is possible to remove impurities from places and electrodes on semiconductor wafers. In order to form a location, etc., a photoresist (photosensitive organic substance) film is formed on the oxide film on the wafer surface, a pattern forming film is placed on the photoresist, and a predetermined pattern is printed by exposing it from above. Then, it is developed,
An example of this is the case where the exposed oxide film portion with no photoresist is removed by etching, and then the remaining photoresist is removed with ozone or (ozone and ultraviolet rays) under heating.

このようなホトレジスト除去操作においては、ホトレジ
ストの分解除去終了の判断は時間の測定により行われて
いる。すなわち、ホトレジスト膜の厚みは予め分かって
おり、その厚みのホトレジスト分解に要するおよその時
間も実験等で予め分かっているので、完全を期するため
、その厚みのホトレジストが分解されるに要するであろ
う時間より多めの時間、分解除去操作を継続するのであ
る。
In such a photoresist removal operation, the completion of decomposition and removal of the photoresist is determined by measuring time. In other words, the thickness of the photoresist film is known in advance, and the approximate time required for the photoresist of that thickness to decompose is also known in advance through experiments, so for completeness, we have calculated the time required for the photoresist of that thickness to be decomposed. The decomposition and removal operation is continued for a time longer than the waxing time.

〔発明が解しようとする問題点〕[Problem that the invention attempts to solve]

しかしながら、このような有機物分解除去に消費される
時間は、実際のホトレジスト分解に要する時間より長い
ので、それだけ半導体製品の生産性が低下し、製品の数
が増えると、それは顕著となる。
However, the time consumed for such decomposition and removal of organic matter is longer than the time required for actual photoresist decomposition, so the productivity of semiconductor products decreases, and this becomes more noticeable as the number of products increases.

残留ホトレジストをプラズマアッシャ−で燃やし、該燃
焼における色の変化を見て、ホトレジストの分解除去終
了を判断する方法も考えられるが、後にイオンが残留す
るという問題がある。
A method of burning the remaining photoresist with a plasma asher and observing a change in color during the burning to determine whether the photoresist has been decomposed and removed can be considered, but there is a problem in that ions remain afterwards.

そこで本発明は、有機物担体上の有機物をオゾン又は(
オゾン及び紫外線)にて分解除去する場合において、時
間の無駄なく、また、残留イオン発生のおそれなく、該
有機物を分解除去できる方法及び装置を提供しようとす
るものである。
Therefore, in the present invention, the organic matter on the organic matter carrier is removed by ozone or (
The purpose of the present invention is to provide a method and apparatus capable of decomposing and removing organic substances without wasting time and without fear of generating residual ions when decomposing and removing organic substances using ozone and ultraviolet rays.

〔問題点を解決するための手段〕[Means for solving problems]

すなわち本発明は、分解除去しようとする有機物を担っ
た有機物担体を密閉反応室内に配置し、該反応室CO2
濃度を測定しつつ該有機物をオゾン又は(オゾン及び紫
外線)により加熱下に分解し、前記CO11度が予め定
めた値より低下したことをもって該有機物の分解除去が
終了したと判断することを特徴とする有機物分解除去方
法、並びに加熱手段を有する密閉可能な反応室、前記反
応室に接続されたオゾン発生器及び前記反応室に接続さ
れたC Oz濃度測定装置を備えたことを特徴とする有
機物分解除去装置を提供するものである。
That is, in the present invention, an organic substance carrier carrying an organic substance to be decomposed and removed is placed in a closed reaction chamber, and CO2 in the reaction chamber is
The organic matter is decomposed under heating with ozone or (ozone and ultraviolet rays) while measuring the concentration, and it is determined that the decomposition and removal of the organic matter has been completed when the CO11 degree falls below a predetermined value. a method for decomposing and removing organic matter, comprising: a sealable reaction chamber having a heating means; an ozone generator connected to the reaction chamber; and a COz concentration measuring device connected to the reaction chamber. A removal device is provided.

〔実 施 例〕〔Example〕

以下、本発明の実施例方法及び該方法を実施する装置例
(第1図)を説明する。
Hereinafter, an example method of the present invention and an example of an apparatus (FIG. 1) for implementing the method will be described.

該装置例によると、酸素ガスボンベ1に流量計2、無声
放電によるオゾン発生器3、密閉可能な反応室4、オゾ
ン分解器5及び排気管6を順次配管接続しである。
According to this example of the apparatus, a flow meter 2, an ozone generator 3 using silent discharge, a sealable reaction chamber 4, an ozone decomposer 5, and an exhaust pipe 6 are connected to an oxygen gas cylinder 1 in sequence.

反応室4は図示しないヒータ加熱装置を有し、回転駆動
され得る物品支持台41を備えている。
The reaction chamber 4 has a heater heating device (not shown) and is equipped with an article support stand 41 that can be rotated.

この反応室には、必要に応じ、図示しない紫外線照射装
置を付設することができる。
This reaction chamber may be provided with an ultraviolet irradiation device (not shown), if necessary.

オゾン発生器3と反応室4との間には窒素ガスボンベ7
が接続されており、また、反応室4とオゾン分解器5と
の間にはオゾン濃度測定器8、CO□濃度測定器9、オ
ゾン分解器10及び排気用ポンプ11が順次配管接続さ
れている。
A nitrogen gas cylinder 7 is installed between the ozone generator 3 and the reaction chamber 4.
is connected, and between the reaction chamber 4 and the ozone decomposer 5, an ozone concentration measuring device 8, a CO□ concentration measuring device 9, an ozone decomposer 10, and an exhaust pump 11 are sequentially connected via piping. .

なお、一つの弁12を除いて他は図示されていないが、
配管の要所要所には装置運転に必要な弁が設けられる。
Note that except for one valve 12, the others are not shown,
Valves necessary for equipment operation are installed at important points in the piping.

前記CO□濃度測定器9の詳細は次のとおりである。The details of the CO□ concentration measuring device 9 are as follows.

(1)ベスト測器株式会社製、BNCO−200(2)
検出方法 JISによる非分散型赤外吸光法(3)測定
範囲 O〜約3000ppm(4)測定成分 CO。
(1) Manufactured by Best Sokki Co., Ltd., BNCO-200 (2)
Detection method: Non-dispersive infrared absorption method according to JIS (3) Measurement range: O to approximately 3000 ppm (4) Measurement component: CO.

(5)再現性  ±1% /FS (6)ドリフト ±3% /FS /H(7)他ガスの
干渉 特になし また、他の機器は次のとおりである。
(5) Reproducibility ±1% /FS (6) Drift ±3% /FS /H (7) Interference with other gases None In addition, other equipment is as follows.

(1)オゾン発生器3 クロリンエンジニアズ■製(2
) CO□濃度記録計 日本電子科学■製(図示しなイ
)   U−228−IP−00(3)オゾン濃度測定
器8 ダイレック■製MODL 1006− AHJ また、有機物分解除去処理条件は次のとおりである。
(1) Ozone generator 3 Manufactured by Chlorin Engineers (2
) CO□ concentration recorder manufactured by JEOL Ltd. (A not shown) U-228-IP-00 (3) Ozone concentration measuring device 8 manufactured by Dylec ■ MODL 1006-AHJ In addition, the organic matter decomposition and removal treatment conditions are as follows. It is.

(1)有機物担体  表面にSin、膜を有するシリコ
ンウェハ 直径5インチ(約 12.7cm) (2)有機物    ホトレジスト(東京応化工業■製
0FPR800)、 担体全面に厚み1.8μ (3)支持台41 のヒータ温度 約300°C (4)酸素ガス流量 約20017H (5)オゾン濃度  5〜7% (6)反応時間   3分 この条件での有機物分解除去手順は次のとおりである。
(1) Organic material carrier Silicon wafer with a Sin film on the surface, diameter 5 inches (about 12.7 cm) (2) Organic material photoresist (0FPR800 manufactured by Tokyo Ohka Kogyo ■), thickness 1.8μ on the entire surface of the carrier (3) Support stand 41 Heater temperature: about 300°C (4) Oxygen gas flow rate: about 20017H (5) Ozone concentration: 5 to 7% (6) Reaction time: 3 minutes The procedure for decomposing and removing organic matter under these conditions is as follows.

また、当該分解除去操作中のco、1度の変化状態は、
図示しない前記COt濃度記録計により第2図のとおり
現れる。
In addition, the state of change of co, 1 degree during the decomposition and removal operation is as follows:
It appears as shown in FIG. 2 by the COt concentration recorder (not shown).

■ 反応室4に酸素ガスを流し、CO□濃度測定器9の
零点を校正する。  。
(2) Flow oxygen gas into the reaction chamber 4 and calibrate the zero point of the CO□ concentration measuring device 9. .

■酸素ガス供給を止め、弁12を開き、CO□濃度測定
器9に大気を流し、スパンを校正する。
■ Stop the oxygen gas supply, open the valve 12, let the atmosphere flow through the CO□ concentration measuring device 9, and calibrate the span.

(大気のCO,濃度は約400ppmである。)■反応
室4に再び酸素を流し、再度、零点を確認する。
(The concentration of CO in the atmosphere is about 400 ppm.) - Flow oxygen into the reaction chamber 4 again and check the zero point again.

■オゾン発生器3を作動させ、反応室4にオゾンを流し
、再度、零点を確認する。また、オゾンを流しても測定
器9の指示に変化がないことを確認する。
- Operate the ozone generator 3, flow ozone into the reaction chamber 4, and check the zero point again. Also, confirm that there is no change in the indication on the measuring device 9 even if ozone is supplied.

■ 反応室4の支持台41上に有機物を担った担体13
を載置して該反応室を密閉し、支持台41を加熱すると
ともに該反応室にオゾンを流し、該反応室中のCO□濃
度を測定器9で測定しつつ、担体13上の有機物を分解
除去する。第2図から分かるように、有機物分解スター
ト時には約1600ppmのCO2が発生し、分解が進
むにつれてcote度が低下する。COt濃度が予め定
めた値(スレッショルド値)約200ppmより下回る
と、該有機物が完全に分解除去されたと判断する。
■ A carrier 13 carrying an organic substance is placed on a support stand 41 in the reaction chamber 4.
The support stage 41 is heated, ozone is flowed into the reaction chamber, and the organic matter on the carrier 13 is measured while the CO□ concentration in the reaction chamber is measured with the measuring device 9. Decompose and remove. As can be seen from FIG. 2, about 1600 ppm of CO2 is generated at the start of organic substance decomposition, and as the decomposition progresses, the degree of cote decreases. When the COt concentration falls below a predetermined value (threshold value) of about 200 ppm, it is determined that the organic matter has been completely decomposed and removed.

■ そのあと反応室4を窒素ガスにてパージし、測定器
9の指示が零になることを確認する。
(2) After that, purge the reaction chamber 4 with nitrogen gas and confirm that the reading on the measuring device 9 becomes zero.

■更に反応室にオゾンを流し、これによっても測定器9
の零点が実質上変わらないことを確認する。
■Furthermore, ozone is flowed into the reaction chamber, which also causes the measuring device 9 to
Verify that the zero point of is virtually unchanged.

■弁12を開き、測定器9に大気を流し、スパン値の再
現があることを確認する。
■Open the valve 12, let air flow through the measuring device 9, and confirm that the span value is reproduced.

第2図において部分XではCO□濃度が局部的に高くな
っているが、これは反応室内の支持台41を回転させて
、分解むらを補正した結果である。
In FIG. 2, the CO□ concentration is locally high in portion X, but this is the result of correcting uneven decomposition by rotating the support stand 41 in the reaction chamber.

前記各ステップにおいてはポンプ11が運転される。In each step, the pump 11 is operated.

このように実施例方法によると、有機物担体上の有機物
除去を確実に、速やかに行うことができる。
As described above, according to the method of the embodiment, the organic matter on the organic matter carrier can be removed reliably and quickly.

なお、本発明は前記実施例に限定されるものではない。Note that the present invention is not limited to the above embodiments.

例えば、CO□濃度のスレッショルド値は有機物の量、
種類等に応じて他の値に適当に定めることができる。ま
た、本発明は前記実施例分野だけでなく、有機物担体上
の有機物を分解しなければならない各種分野において採
用して有利である。
For example, the threshold value for CO□ concentration is the amount of organic matter,
It can be appropriately set to other values depending on the type, etc. Furthermore, the present invention is advantageously applicable not only to the field of the above-mentioned embodiments but also to various fields in which organic matter on an organic matter carrier must be decomposed.

〔発明の効果〕〔Effect of the invention〕

本発明によると、有機物担体上の有機物をオゾン又は(
オゾン及び紫外線)にて分解除去する場合において、時
間の無駄なく、また、残留イオン発生のおそれなく、該
有機物を分解除去できる方法及び装置を提供することが
できる効果がある。
According to the present invention, the organic substance on the organic substance carrier is removed by ozone or (
In the case of decomposing and removing organic matter using ozone and ultraviolet rays, it is possible to provide a method and apparatus that can decompose and remove the organic matter without wasting time and without fear of generating residual ions.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明方法を実施するための装置例の概略説明
図、第2図は゛第1図に示す装置を用いた本発明方法実
施例におけるC Oz濃度変化状態を表すグラフである
。 3・・・・・オゾン発生器、 4・・・・・反応室、 9・・・・・COt濃度測定器、 13・・・・有機物担体。
FIG. 1 is a schematic explanatory diagram of an example of an apparatus for carrying out the method of the present invention, and FIG. 2 is a graph showing changes in COz concentration in an example of the method of the present invention using the apparatus shown in FIG. 3...Ozone generator, 4...Reaction chamber, 9...COt concentration measuring device, 13...Organic substance carrier.

Claims (2)

【特許請求の範囲】[Claims] (1)分解除去しようとする有機物を担った有機物担体
を密閉反応室内に配置し、該反応室CO_2濃度を測定
しつつ該有機物をオゾン又は(オゾン及び紫外線)によ
り加熱下に分解し、前記CO_2濃度が予め定めた値よ
り低下したことをもって該有機物の分解除去が終了した
と判断することを特徴とする有機物分解除去方法。
(1) An organic substance carrier carrying an organic substance to be decomposed and removed is placed in a closed reaction chamber, and while measuring the CO_2 concentration in the reaction chamber, the organic substance is decomposed under heating with ozone or (ozone and ultraviolet rays), and the CO_2 A method for decomposing and removing organic matter, characterized in that it is determined that the decomposition and removal of the organic matter has been completed when the concentration has decreased below a predetermined value.
(2)加熱手段を有する密閉可能な反応室、前記反応室
に接続されたオゾン発生器及び前記反応室に接続された
CO_2濃度測定装置を備えたことを特徴とする有機物
分解除去装置。
(2) An organic matter decomposition and removal device comprising: a sealable reaction chamber having heating means; an ozone generator connected to the reaction chamber; and a CO_2 concentration measuring device connected to the reaction chamber.
JP62250207A 1987-10-03 1987-10-03 Method and equipment for removing organic matter by decomposition Pending JPH01186619A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62250207A JPH01186619A (en) 1987-10-03 1987-10-03 Method and equipment for removing organic matter by decomposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62250207A JPH01186619A (en) 1987-10-03 1987-10-03 Method and equipment for removing organic matter by decomposition

Publications (1)

Publication Number Publication Date
JPH01186619A true JPH01186619A (en) 1989-07-26

Family

ID=17204414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62250207A Pending JPH01186619A (en) 1987-10-03 1987-10-03 Method and equipment for removing organic matter by decomposition

Country Status (1)

Country Link
JP (1) JPH01186619A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10975182B2 (en) 2011-12-23 2021-04-13 Japan Polyethylene Corporation Polar group-containing olefin copolymer, multinary polar olefin copolymer, olefin resin composition, and adhesive material, laminate, and other application products using same
US11342162B2 (en) 2017-09-15 2022-05-24 SCREEN Holdings Co., Ltd. Resist removing method and resist removing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10975182B2 (en) 2011-12-23 2021-04-13 Japan Polyethylene Corporation Polar group-containing olefin copolymer, multinary polar olefin copolymer, olefin resin composition, and adhesive material, laminate, and other application products using same
US11342162B2 (en) 2017-09-15 2022-05-24 SCREEN Holdings Co., Ltd. Resist removing method and resist removing apparatus

Similar Documents

Publication Publication Date Title
US6277767B1 (en) Method for cleaning semiconductor device
US6171104B1 (en) Oxidation treatment method and apparatus
JP2008294453A (en) Method and equipment for processing substrate, and computer-readable recording medium
JP2009272558A (en) Method for manufacturing semiconductor device, semiconductor device, and semiconductor manufacturing device
JPH01186619A (en) Method and equipment for removing organic matter by decomposition
US20080096392A1 (en) Ashing system
US20060128160A1 (en) Photoresist strip using solvent vapor
JPH09171999A (en) Plasma cleaning treatment method
JPH09263944A (en) Film forming device
JP2768760B2 (en) Resist ashing device
EP0197286A2 (en) A dry development method for a resist film
JPH05217968A (en) Surface processing of semiconductor substrate
US20020009899A1 (en) Method and device for manufacturing semiconductor devices including insulation oxide layers
JPS6127635A (en) High efficiency dry type removing device of photoresist
JP3849123B2 (en) Accelerated test method and accelerated test apparatus
KR20240045602A (en) Substrate processing system and substrate processing method using the same
JPH0327517A (en) Detection device of resist peeling end point
JPS63271933A (en) Ashing method
JP2979490B2 (en) Gas detector in semiconductor manufacturing process
JP3460855B2 (en) Cleaning method and cleaning device
JP2000323455A (en) Ashing apparatus
JPH02105416A (en) Method and apparatus for cleaning and oxidation of surface of solid body
JPH02295114A (en) Method and apparatus for ion implantation
JPH0484415A (en) Method of resist ashing
JPH01233727A (en) Surface treatment and apparatus therefor

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040907

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20050111