JPH01184821A - Wafer replacing method - Google Patents
Wafer replacing methodInfo
- Publication number
- JPH01184821A JPH01184821A JP63004729A JP472988A JPH01184821A JP H01184821 A JPH01184821 A JP H01184821A JP 63004729 A JP63004729 A JP 63004729A JP 472988 A JP472988 A JP 472988A JP H01184821 A JPH01184821 A JP H01184821A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cassette
- chamber
- constant temperature
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- 235000012431 wafers Nutrition 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000011109 contamination Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はウェハー交換方法に係り、特に半導体集積回路
素子を製造する半導体製造装置に異物による汚染が発生
しないようにするのに好適なウェハー交換方法に関する
ものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a wafer exchange method, and in particular to a wafer exchange method suitable for preventing contamination by foreign matter from occurring in semiconductor manufacturing equipment for manufacturing semiconductor integrated circuit elements. It is about the method.
第3図に従来の縮小投影露光装置の概略図を示す。水銀
ランプ1より発生した単色光2(例えば、波長436n
mのg線)は、コンデンサレンズ3を経てレチクル4を
照射する。レチクル像は縮小レンズ5により縮小され、
ウェハー6に投影される。一方、ウェハー6はXYステ
ージ7上でステップ・アンド・リピート動作により一定
間隔で移動し、レチクル縮小像が転写されてゆく。FIG. 3 shows a schematic diagram of a conventional reduction projection exposure apparatus. Monochromatic light 2 generated from a mercury lamp 1 (for example, wavelength 436n)
g-line) illuminates the reticle 4 through the condenser lens 3. The reticle image is reduced by a reduction lens 5,
It is projected onto the wafer 6. On the other hand, the wafer 6 is moved at regular intervals on the XY stage 7 by a step-and-repeat operation, and the reticle reduced image is transferred.
ウェハー6は、ロードカセット8内に複数枚収納され、
m送アーム9によりXYステージ7上に移送される。次
に、露光の終了したウェハー6は、同じく搬送アーム9
によりアンロードカセット10に排出される。縮小投影
露光装置は、一般に温度がコントロールされた恒温チャ
ンバー11内に収納されて使用される。A plurality of wafers 6 are stored in a load cassette 8,
It is transferred onto the XY stage 7 by the m-transfer arm 9. Next, the exposed wafer 6 is transferred to the transfer arm 9.
is discharged to the unload cassette 10. The reduction projection exposure apparatus is generally used while being housed in a constant temperature chamber 11 whose temperature is controlled.
ロードカセット8内のウェハー6は、すべて露光される
と、新しいウェハー6の入ったカセットに交換される。When all of the wafers 6 in the load cassette 8 have been exposed, they are replaced with a cassette containing new wafers 6.
この交換作業は、恒温チャンバー11の前面のガラス戸
12を開けて行われる。This replacement work is performed by opening the glass door 12 at the front of the constant temperature chamber 11.
ところが、交換の際にガラス戸12を開けることにより
外気が恒温チャンバー11内に流入する。However, by opening the glass door 12 during replacement, outside air flows into the constant temperature chamber 11.
また、オペレータの身体の一部が恒温チャンバー11内
に入ることになり、外気に含まれる異物(ごみ)やオペ
レータの身体に付着していた異物が恒温チャンバー11
内に浸入して装置を汚染させていた。In addition, part of the operator's body enters the constant temperature chamber 11, and foreign matter (dust) contained in the outside air and foreign matter attached to the operator's body enter the constant temperature chamber 11.
had entered the equipment and contaminated the equipment.
上記従来技術は、恒温チャンバーを常時清浄に保ってお
くという配慮がなされておらず、特に縮小投影露光装置
においては、レチクルに付着した異物は、IC回路パタ
ーンに致命的なダメージを与え、歩留りの低下や不良を
増大させていた。The above conventional technology does not take into consideration keeping the constant temperature chamber clean at all times, and especially in reduction projection exposure equipment, foreign matter adhering to the reticle can cause fatal damage to the IC circuit pattern and reduce the yield. This resulted in an increase in deterioration and defects.
本発明の目的は、ウェハーカセット交換時に極力外気を
恒温チャンバー内に流入させないようにできるウェハー
交換方法を提供することにある。An object of the present invention is to provide a wafer exchange method that can prevent outside air from flowing into a constant temperature chamber as much as possible when exchanging a wafer cassette.
上記目的は、恒温チャンバーの一部に開口部を設け、こ
の開口部に開閉可能な扉を取りつけ、この扉を開けるこ
とによりウェハーを複数枚収納したカセットを上記開口
部を通して上記恒温チャンバー内外に出し入れするよう
にして達成するようにした。The above purpose is to provide an opening in a part of the constant temperature chamber, attach a door that can be opened and closed to this opening, and by opening this door, a cassette containing a plurality of wafers can be taken in and out of the constant temperature chamber through the opening. I tried to achieve it by doing so.
ウェハーカセットをロード側、アンロード側にそれぞれ
カセット台上に乗せ、このカセット台をエアーシリンダ
等により恒温チャンバー外に人手を介さず自動的に取り
出すようにしたので、恒温チャンバー内を異物で汚染す
ることが少なくなる。The wafer cassettes are placed on cassette stands on the load side and unload side, and the cassette stands are automatically taken out of the constant temperature chamber using an air cylinder, etc., without human intervention, which prevents contamination of the inside of the constant temperature chamber with foreign matter. There will be fewer things.
以下本発明を第1図、第2図に示した実施例を用いて詳
細に説明する。The present invention will be explained in detail below using the embodiments shown in FIGS. 1 and 2.
第1図は本発明のウェハー交換方法の一実施例を説明す
るための構成図である。恒温チャンバー11の壁面の一
部にロードカセット8、アンロードカセットlOを出し
入れできるだけの大きさの開口部20を設け、装置が稼
動中はふた21でふさいでおく。FIG. 1 is a block diagram for explaining an embodiment of the wafer exchanging method of the present invention. An opening 20 large enough to take in and take out the load cassette 8 and unload cassette 1O is provided in a part of the wall surface of the constant temperature chamber 11, and is covered with a lid 21 while the apparatus is in operation.
ウェハーカセットを交換するときは、まず、ふた21を
図示の如く下方に回転する。続いてスイッチ(図示せず
)を操作することにより電磁弁23が作動し、エアーシ
リンダ24に圧縮空気を流入してロッド25を移動し始
める。ロッド25の先端には、ウェハーカセットを乗せ
であるウェハー台26が連結しである。これによりウェ
ハーカセットは、恒温チャンバー11の開口部20を通
して恒温チャンバー11の外部に取り出される。When exchanging the wafer cassette, first rotate the lid 21 downward as shown. Subsequently, by operating a switch (not shown), the solenoid valve 23 is activated, compressed air flows into the air cylinder 24, and the rod 25 begins to move. A wafer stand 26 on which a wafer cassette is placed is connected to the tip of the rod 25. Thereby, the wafer cassette is taken out of the constant temperature chamber 11 through the opening 20 of the constant temperature chamber 11.
以上の実施例は、ウェハーカセット単位でウェハーを取
り扱うバッチ式システムとなっているが。The above embodiment is a batch system that handles wafers in wafer cassette units.
近年自動化をはかるインライン式システムが考えられて
いる。本実施例をインライン式システムと 7して使用
する方法を第2図を用いて説明する。この場合は、ウェ
ハーカセットは取り外しておく。In recent years, inline systems aiming at automation have been considered. A method of using this embodiment as an inline system will be explained with reference to FIG. In this case, remove the wafer cassette.
ホトレジスト塗布装置30によってホトレジストを塗布
されたウェハー31は、搬送ベルト32によって搬入ア
ーム33まで移送された後、第1図に示すエアーシリン
ダ24により恒温チャンバー11内に搬入される1次に
、露光の終了したウェハーは、排出アーム34により恒
温チャンバー11外に取り出された後、排出ベルト35
で現像機36へと移送される。The wafer 31 coated with photoresist by the photoresist coating device 30 is transferred to the carry-in arm 33 by the conveyor belt 32, and then carried into the constant temperature chamber 11 by the air cylinder 24 shown in FIG. The finished wafer is taken out of the constant temperature chamber 11 by the ejection arm 34, and then transferred to the ejection belt 35.
Then, the image is transferred to the developing machine 36.
以上説明した本発明によれば、恒温チャンバーのガラス
戸を開けることなく、最小開口部を通してカセットを交
換できるので、異物が恒温チャンバー内に浸入すること
が少なく、常に恒温チャンバー内を清浄に保つことがで
き、しかも、カセットの交換は恒温チャンバー外で容易
に行うことができるので作業性が向上し、また、インラ
インによる自動化対応も容易にできるという効果がある
。According to the present invention described above, cassettes can be exchanged through the smallest opening without opening the glass door of the constant temperature chamber, so foreign objects are less likely to enter the constant temperature chamber, and the inside of the constant temperature chamber can always be kept clean. In addition, cassettes can be easily replaced outside the thermostatic chamber, improving work efficiency, and can also be easily automated in-line.
第1図は本発明のウェハー交換方法の一実施例を説明す
るための縮小投影露光装置の一例を示す構成図、第2図
は本発明の詳細な説明するための構成図、第3図は従来
の縮小投影露光装置の概略図である。
6・・・ウェハー、8・・・ロードカセット、10・・
・アンロードカセット、11・・・恒温チャンバー、2
0・・・開口部、21・・・ふた、24・・・エアーシ
リンダ、25・・・ロッド、26・・・ウェハー台、3
2・・・搬送ベルト、33・・・搬入アーム、34・・
・排出アーム、35・・・排出ベルト。
ff11図
第2図
第3図FIG. 1 is a block diagram showing an example of a reduction projection exposure apparatus for explaining an embodiment of the wafer exchanging method of the present invention, FIG. 2 is a block diagram for explaining the present invention in detail, and FIG. 1 is a schematic diagram of a conventional reduction projection exposure apparatus. 6...Wafer, 8...Load cassette, 10...
・Unload cassette, 11... constant temperature chamber, 2
0... Opening, 21... Lid, 24... Air cylinder, 25... Rod, 26... Wafer stand, 3
2...Transport belt, 33...Carry-in arm, 34...
・Ejection arm, 35...Ejection belt. ff11Figure 2Figure 3
Claims (1)
恒温チャンバー内に収納して所定温度下で作業を進める
半導体製造装置において、前記恒温チャンバーの一部に
開口部を設け、該開口部に開閉可能な扉を取りつけ、該
扉を開けることにより前記ウェハーを複数枚収納したカ
セットを前記開口部を通して前記恒温チャンバー内外に
出し入れすることを特徴とするウェハー交換方法。 2、前記カセットを取り外して前記ウェハーを枚葉式に
前記恒温チャンバー内外に出し入れする特許請求の範囲
第1項記載のウェハー交換方法。[Scope of Claims] 1. In a semiconductor manufacturing apparatus in which a device for forming a circuit pattern on a semiconductor wafer is housed in a constant temperature chamber and work is carried out at a predetermined temperature, an opening is provided in a part of the constant temperature chamber; A wafer exchange method characterized in that a door that can be opened and closed is attached to the opening, and by opening the door, a cassette containing a plurality of wafers is taken in and out of the thermostatic chamber through the opening. 2. The wafer exchange method according to claim 1, wherein the cassette is removed and the wafers are taken in and out of the thermostatic chamber in a single wafer manner.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63004729A JPH01184821A (en) | 1988-01-14 | 1988-01-14 | Wafer replacing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63004729A JPH01184821A (en) | 1988-01-14 | 1988-01-14 | Wafer replacing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01184821A true JPH01184821A (en) | 1989-07-24 |
Family
ID=11591986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63004729A Pending JPH01184821A (en) | 1988-01-14 | 1988-01-14 | Wafer replacing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01184821A (en) |
-
1988
- 1988-01-14 JP JP63004729A patent/JPH01184821A/en active Pending
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