JPH01183439A - Production of humidity sensor - Google Patents
Production of humidity sensorInfo
- Publication number
- JPH01183439A JPH01183439A JP451988A JP451988A JPH01183439A JP H01183439 A JPH01183439 A JP H01183439A JP 451988 A JP451988 A JP 451988A JP 451988 A JP451988 A JP 451988A JP H01183439 A JPH01183439 A JP H01183439A
- Authority
- JP
- Japan
- Prior art keywords
- sol
- humidity
- sensor
- film
- sintered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- -1 silicon alkoxide Chemical class 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 5
- 238000001035 drying Methods 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 239000006229 carbon black Substances 0.000 abstract description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 4
- 230000003301 hydrolyzing effect Effects 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000007062 hydrolysis Effects 0.000 description 4
- 238000006460 hydrolysis reaction Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Landscapes
- Glass Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、湿度を素子の電気的特性の変化として検出す
る湿度センナの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a humidity sensor that detects humidity as a change in the electrical characteristics of an element.
近年、湿度測定、湿度制御を必要とする分野が増加し、
湿度センサの重要性が認められるようになった。In recent years, the number of fields requiring humidity measurement and humidity control has increased.
The importance of humidity sensors is now recognized.
湿度を素子の電気的特性の変化として検出する湿度セン
ナには、電解質系、高分子系、金M系。Humidity sensors that detect humidity as changes in the electrical characteristics of elements include electrolyte-based, polymer-based, and gold M-based sensors.
セラミックス系等があり、それぞれいろいろな系が研究
されているが、現在実用化されているものは、高分子系
およびセラミックス系の湿度センナである。いずれも、
水の吸脱着により、素子の抵抗値又は静電容量が変化す
る性質を利用したものである。There are ceramic-based humidity sensors, and various systems are being researched, but the ones currently in practical use are polymer-based and ceramic-based humidity sensors. both,
This takes advantage of the property that the resistance value or capacitance of the element changes due to adsorption and desorption of water.
しかし、従来の湿度センナは、高湿度、低湿度で精度が
悪く、高温高湿の環境で長期間使用すると劣化してしま
うという欠点があった。特に、抵抗値検出型の湿度セン
ナは低湿度での精度が悪く、高温高湿中での劣化は高分
子系湿度上ンサに顕著に現れる傾向がある。セラミック
ス系湿度センサには、一定時間ごとに素子を数100℃
に加熱し、劣化した特性を回復させる、加熱り7レツシ
エという機構を設けた製品がある。この場合、加熱リフ
レッシュにより経時変化は小さくできるが、素子が高温
になるため、可燃性のガスや粉塵の存在する所では爆発
や火災の危険があり使用できない。この様K、満足すべ
き特性を持つ湿度センサは、現状では皆無であると言っ
ても過言ではない。However, conventional humidity sensors have the disadvantage that they have poor accuracy in high humidity and low humidity, and deteriorate when used for long periods in high temperature and high humidity environments. In particular, resistance value detection type humidity sensors have poor accuracy at low humidity, and deterioration under high temperature and high humidity tends to be noticeable in polymer humidity sensors. For ceramic humidity sensors, the element is heated to several hundred degrees Celsius at regular intervals.
There is a product equipped with a mechanism called Heating 7 Ressie, which restores deteriorated properties by heating the product. In this case, aging can be reduced by heating and refreshing, but since the element becomes high temperature, it cannot be used in places where flammable gas or dust is present due to the risk of explosion or fire. It is no exaggeration to say that there are currently no humidity sensors with such satisfactory characteristics.
そこで本発明はこの様な問題点を解決するもので、その
目的とするところは、高精度で量産性の高い湿度センサ
の製造方法を提供するところにある。The present invention is intended to solve these problems, and its purpose is to provide a method for manufacturing a humidity sensor with high precision and high mass productivity.
本発明の湿度センサの製造方法は、シリコンアルフキシ
トを、シリコンアルコキシドと水のモルで加水分解を行
ったゾルに、炭素粒子を分散させ、該ゾルを絶縁基板上
に皮膜状にゲル化させ、乾燥、焼結することを特徴とす
る。The method for manufacturing a humidity sensor of the present invention includes dispersing carbon particles in a sol obtained by hydrolyzing silicon alkoxide with moles of silicon alkoxide and water, and gelling the sol into a film on an insulating substrate. It is characterized by drying and sintering.
シリコンアルフキシトを加水分解したゾルに、炭素粒子
を分散させ、該ゾルを絶縁基板上に皮膜状にゲル化させ
、乾燥、焼結することにより、湿度センナを得ることが
できる。(当社N125959シリコンアルフキシトに
は4個のアルキル基が結合しており、加水分解は、アル
キル基1個につき水分子1個が反応するので1.シリコ
ンアルコキシドを完全に加水分解するためには、シリコ
ンアルフキシト1モルに対し水は4モル必要であり、る
ような水の量で加水分解される。しかし、シリコンアル
コキシドを完全に加水分解してしまうと、焼結時にゲル
の収縮が大きく、基板から剥離してしまうことがあった
。種々の実験の結果、加水分解に用いる水の量を減らす
ことにより、焼結時のゲルの収縮が小さくなり、基板と
焼結膜の密着性が良くなることが判明した。しかし、あ
まり水の量を減らすと加水分解が不完全なため、焼結膜
の機械的強震が低下するため、加水分解に用いる実施例
1゜
テトラエトキシシラン(f91(00,I!、)4)
50明で均一なゾルが得られた。このゾルにカーボンブ
ラック1[L8tを加え、30分間攪拌し、カーボンブ
ラックを分散させたところ、黒色で均一なゾルが得られ
た。このゾルをガラス基板上に皮膜状にゲル化させ、6
0℃で1日乾燥した後、450℃で1時間焼結したとこ
ろ、ガラス基板上に焼結膜が得られた。得られた焼結膜
に電極を付け、第1図に示す湿度センナを製作した。第
1図において、1は焼結膜、2は電極、3はリード線、
4は基板である。本湿度センナの感湿特性を第2図に示
す。第2図より、相対湿度に対する抵抗値の対数の直線
性が良く、また、低湿度でも測定しやすい抵抗値である
ため、高精度な湿度センサとして使用できることがわか
る。A humidity sensor can be obtained by dispersing carbon particles in a sol obtained by hydrolyzing silicon alphoxide, gelling the sol into a film on an insulating substrate, drying and sintering. (Our N125959 silicon alkoxide has four alkyl groups bonded to it, and during hydrolysis, one water molecule reacts with each alkyl group. 1. In order to completely hydrolyze silicon alkoxide, 4 moles of water are required for 1 mole of silicon alkoxide, and it can be hydrolyzed with such an amount of water.However, if silicon alkoxide is completely hydrolyzed, the gel will shrink significantly during sintering. The gel sometimes peeled off from the substrate.As a result of various experiments, reducing the amount of water used for hydrolysis reduces the shrinkage of the gel during sintering and improves the adhesion between the substrate and the sintered film. However, if the amount of water is reduced too much, the hydrolysis will be incomplete and the mechanical strength of the sintered film will decrease. !,)4)
A uniform sol with a brightness of 50% was obtained. Carbon black 1 [L8t] was added to this sol and stirred for 30 minutes to disperse the carbon black, resulting in a black and uniform sol. This sol was gelled into a film on a glass substrate, and 6
After drying at 0°C for 1 day, sintering was performed at 450°C for 1 hour, and a sintered film was obtained on the glass substrate. Electrodes were attached to the obtained sintered film to produce the humidity sensor shown in FIG. In Fig. 1, 1 is a sintered film, 2 is an electrode, 3 is a lead wire,
4 is a substrate. The humidity sensitivity characteristics of this humidity sensor are shown in Figure 2. From FIG. 2, it can be seen that the linearity of the logarithm of the resistance value with respect to relative humidity is good, and the resistance value is easy to measure even at low humidity, so that it can be used as a highly accurate humidity sensor.
実施例λ
加水分解したところ、透明で均一なゾルが得られた。こ
のゾルにカーボンブラックS、4tを加え、50分間攪
拌し、カーボンブラックを分散させたところ、黒色で均
一なゾルが得られた。このゾルをアルミナ基板上に皮膜
状にゲル化させ、60℃で1日乾燥した後、400℃で
5時間焼結したところ、アルミナ基板上に焼結膜が得ら
れた。得られた焼結膜に電極を付け、第1図に示す湿度
センサを製作した。本湿度センナの感湿特性を第3図に
示す。Example λ Upon hydrolysis, a transparent and uniform sol was obtained. When 4t of carbon black S was added to this sol and stirred for 50 minutes to disperse the carbon black, a black and uniform sol was obtained. This sol was gelled into a film on an alumina substrate, dried at 60°C for one day, and then sintered at 400°C for 5 hours, resulting in a sintered film on the alumina substrate. Electrodes were attached to the obtained sintered film, and the humidity sensor shown in FIG. 1 was manufactured. The humidity sensitivity characteristics of this humidity sensor are shown in Figure 3.
実施例五
を加え、1時間攪拌し、テトラエトキシシフンt加水分
解したところ、透明で均一なゾルが得られた。このゾル
に活性炭21.6 fを加え、30分間攪拌し、カーボ
ンブラックを分散させたところ、黒色で均一なゾルが得
られた。このゾルをアルミナ基板上に皮膜状にゲル化さ
せ、60℃で1日乾燥した後、500℃で30分間焼結
したところ、アルミナ基板上に焼結膜が得られた。得ら
れた焼結膜に電極を付け、第1図に示す湿度センナを製
作した。本湿度センサの感湿特性を第4図に示す、この
様に、本湿度センサは特性が良く、さらに製造方法が単
純なため、量産性も優れている。Example 5 was added and stirred for 1 hour to hydrolyze tetraethoxysilane, yielding a transparent and uniform sol. When 21.6 f of activated carbon was added to this sol and stirred for 30 minutes to disperse carbon black, a black and uniform sol was obtained. This sol was gelled into a film on an alumina substrate, dried at 60°C for one day, and then sintered at 500°C for 30 minutes, resulting in a sintered film on the alumina substrate. Electrodes were attached to the obtained sintered film to produce the humidity sensor shown in FIG. The humidity sensitivity characteristics of this humidity sensor are shown in FIG. 4. As shown, this humidity sensor has good characteristics, and furthermore, since the manufacturing method is simple, it is also excellent in mass production.
以上述べたよ5に本発明の湿度センサの製造方法は、シ
リコンアルコキシドを、シリコンアルフるよ5な水の量
で加水分解を行ったゾルに、炭素粒子を分散させ、該ゾ
ルを絶縁基板上に皮膜状にゲル化させ、乾燥、焼結する
ので、相対湿度に対する抵抗値の対数の直線性が良く、
また、低湿度でも測定しやすい抵抗値であるため、高精
度な湿度センサとして使用できる。さらに、製造方法が
単純なため、量産性も優れている。したがりて、湿度計
測、湿度制御を必要とする分野に広く応用することがで
きる。As described above, the method for manufacturing a humidity sensor of the present invention involves dispersing carbon particles in a sol obtained by hydrolyzing silicon alkoxide with a similar amount of water, and dispersing the sol on an insulating substrate. Since it is gelled into a film, dried and sintered, the logarithm of the resistance value against relative humidity has good linearity.
Furthermore, since the resistance value is easy to measure even at low humidity, it can be used as a highly accurate humidity sensor. Furthermore, since the manufacturing method is simple, mass productivity is excellent. Therefore, it can be widely applied to fields requiring humidity measurement and humidity control.
第1図は、本発明の湿度センナの構成例を示す斜視図。
1・・・・・・・・・焼結膜
2・・・・・・・・・電 極
3・・・・・・・・・リード線
4・・・・・・・・・基 板
第2図、第3図、第4図は、本発明の湿度センサの感湿
特性図。
以上
出願人 セイコーエプソン株式会社
代理人 弁−士最上務(他1名)
Q 150 100
相ガラt4<9
第2図
O与0 1o0
軸討羞L(%)
第3図FIG. 1 is a perspective view showing an example of the configuration of a humidity sensor according to the present invention. 1... Sintered film 2... Electrode 3... Lead wire 4... Substrate 2nd 3 and 4 are humidity sensitivity characteristic diagrams of the humidity sensor of the present invention. Applicant Seiko Epson Co., Ltd. Agent Mogami Ben-shi (and 1 other person) Q 150 100 Aigara t4<9 Figure 2 Oy0 1o0 L (%) Figure 3
Claims (1)
ル基)を、シリコンアルコキシビと水(H_2O)のモ
ル比が{H_2O/Si(OR)_4}=0.5〜2で
あるような水の量で加水分解を行ったゾルに、炭素粒子
を分散させ、該ゾルを絶縁基板上に皮膜状にゲル化させ
、乾燥、焼結することを特徴とする湿度センサの製造方
法。Silicon alkoxide (Si(OR)_4, R: alkyl group) is mixed with an amount of water such that the molar ratio of silicon alkoxide and water (H_2O) is {H_2O/Si(OR)_4}=0.5 to 2. A method for manufacturing a humidity sensor, which comprises dispersing carbon particles in a sol that has been hydrolyzed in step 1, gelling the sol into a film on an insulating substrate, drying, and sintering the sol.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP451988A JPH01183439A (en) | 1988-01-12 | 1988-01-12 | Production of humidity sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP451988A JPH01183439A (en) | 1988-01-12 | 1988-01-12 | Production of humidity sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01183439A true JPH01183439A (en) | 1989-07-21 |
Family
ID=11586298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP451988A Pending JPH01183439A (en) | 1988-01-12 | 1988-01-12 | Production of humidity sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01183439A (en) |
-
1988
- 1988-01-12 JP JP451988A patent/JPH01183439A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR940002635B1 (en) | Humidity sensor | |
US3644795A (en) | Gas detecting element and method of making it | |
JPH01183439A (en) | Production of humidity sensor | |
JPS5814043B2 (en) | humidity sensor element | |
JPH01202640A (en) | Manufacture of humidity sensor | |
JP2676469B2 (en) | Method for manufacturing NTC thermistor | |
JP2707246B2 (en) | Humidity sensor | |
JPH02260503A (en) | Humidity sensor | |
JPS63293458A (en) | Method for aging humidity sensor | |
JPH02260505A (en) | Humidity sensor | |
JPH02260506A (en) | Humidity sensor | |
JPS63293457A (en) | Humidity sensor | |
JPH02232901A (en) | Humidity sensor | |
JPH04279852A (en) | Humidity sensor | |
JPH02260504A (en) | Humidity sensor | |
JPH02298001A (en) | Humidity sensor element | |
JPS5840801A (en) | Humidity sensor element | |
JPH01180442A (en) | Production of humidity sensor | |
JPH01274055A (en) | Humidity detector | |
JPS63292052A (en) | Alarm for excessive drying | |
JPH03242543A (en) | Moisture sensor | |
JPS61245049A (en) | Humidity sensor | |
JPS5853734B2 (en) | Kanenseigaskenchi Soshinoseizouhouhou | |
JPH03242545A (en) | Moisture sensor | |
JPH0161175B2 (en) |