JPH03242543A - Moisture sensor - Google Patents
Moisture sensorInfo
- Publication number
- JPH03242543A JPH03242543A JP3875490A JP3875490A JPH03242543A JP H03242543 A JPH03242543 A JP H03242543A JP 3875490 A JP3875490 A JP 3875490A JP 3875490 A JP3875490 A JP 3875490A JP H03242543 A JPH03242543 A JP H03242543A
- Authority
- JP
- Japan
- Prior art keywords
- oxide particles
- copper oxide
- dispersed
- silica
- stirred
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000005751 Copper oxide Substances 0.000 claims abstract description 13
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 abstract description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 235000011187 glycerol Nutrition 0.000 abstract description 2
- 238000003618 dip coating Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910018879 Pt—Pd Inorganic materials 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000026041 response to humidity Effects 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、温度に対応して素子の電気的特性が変化する
ことにより湿度を検出する湿度センサに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a humidity sensor that detects humidity by changing the electrical characteristics of an element in response to temperature.
［従来の技術］
近年、湿度計測、湿度制御を必要とする分野が増加し、
湿度センサの重要性が認められるようになった。[Conventional technology] In recent years, the number of fields requiring humidity measurement and humidity control has increased.
The importance of humidity sensors is now recognized.
湿度に対応して素子の電気的特性が変化することにより
湿度を検出する湿度センサには、電解質系、金属系、高
分子系、セラミックス系等があり、それぞれいろいろな
系が研究されているが、現在実用化されているものは、
高分子系およびセラミックス系の湿度センサである。い
ずれも、素子に対する水の吸脱着により、素子の抵抗値
または静電容量が変化する性質を利用したものである。Humidity sensors that detect humidity by changing the electrical characteristics of the element in response to humidity include electrolyte-based, metal-based, polymer-based, ceramic-based, etc., and various systems are being researched. , those currently in practical use are:
These are polymer-based and ceramic-based humidity sensors. All of these utilize the property that the resistance value or capacitance of the element changes due to adsorption and desorption of water to the element.
［Ｎ明が解決しようとする課題］
しかし、従来の湿度センサは、抵抗値が高いため、精度
の良い温度計を製造するためには、高度な回路技術およ
び実装技術を必要とした。[Problems that Nmei attempts to solve] However, since conventional humidity sensors have a high resistance value, advanced circuit technology and packaging technology are required to manufacture a thermometer with high accuracy.
そこで本発明はこのような問題点を解決するもので、そ
の目的とするところは、抵抗値の低い湿度センサを提供
するところにある。The present invention is intended to solve these problems, and its purpose is to provide a humidity sensor with a low resistance value.
［課題を解決するための手段］
本発明の湿度センサは、酸化銅粒子を分散させたシリカ
膜を感温膜として用いることを特徴とする特
シリカ膜に酸化銅粒子を分散させることにより、 ２
図より、本発明の湿度センサは、抵抗値が低く、抵抗値
の低い温度センサを得ることができる。 使いや
すいことがわかる。[Means for Solving the Problems] The humidity sensor of the present invention is characterized in that a silica film in which copper oxide particles are dispersed is used as a temperature-sensitive film.By dispersing copper oxide particles in a special silica film, 2.
From the figure, the humidity sensor of the present invention has a low resistance value, and a temperature sensor with a low resistance value can be obtained. You will find it easy to use.
［実施例］
テトラエトキシシラン（Ｓ １（ＯＣａＨｓ）４） ５
０ｍｌにエタノール２５ｍ１．０．０２Ｎ塩酸４ｍｌを
加え、１時間攪拌することによりテトラエトキシシラン
を加水分解した後、グリセリン１０ｍ１、微粉末シリカ
１３．５ｇを加え、３０分間攪拌し、さらに酸化銅粒子
２３ｇを加え、３０分間攪拌することにより、酸化銅粒
子を分散させたシリカゾルを作製した。Ｐｔ−Ｐｄ櫛形
電極をスクリーン印刷により形成したアルミナ基板上に
、このゾルをデイツプコーティングし、１００ ’Ｃで
１０分間乾燥し、４５０°Ｃで３０分間焼結し、酸化銅
粒子を分散させたシリカ膜を形成した。[Example] Tetraethoxysilane (S 1 (OCaHs) 4) 5
After adding 25 ml of ethanol and 4 ml of 0.02N hydrochloric acid to 0 ml and stirring for 1 hour to hydrolyze tetraethoxysilane, 10 ml of glycerin and 13.5 g of finely powdered silica were added and stirred for 30 minutes, followed by 23 g of copper oxide particles. was added and stirred for 30 minutes to produce a silica sol in which copper oxide particles were dispersed. This sol was dip-coated on an alumina substrate on which Pt-Pd comb-shaped electrodes were formed by screen printing, dried at 100'C for 10 minutes, and sintered at 450°C for 30 minutes to disperse copper oxide particles. A silica film was formed.
このようにして製作した湿度センサの斜視図を第１図に
示す、第１図において、１は基板、２は電極、３は酸化
銅粒子を分散させたシリカ膜である０本捏度センサの感
温特性を第２図に示す。第［発明の効果］
以上述べたように本発明の湿度センサは、酸化銅粒子を
分散させたシリカ膜を感湿膜として用いるので、抵抗値
が低いため、高度な回路技術および実装技術は必要なく
、使いやすい。したがって、底コスト、高精度な温度セ
ンサとして、湿度計測、湿度制御を必要とする分野に広
く応用することができる。A perspective view of the humidity sensor manufactured in this way is shown in Figure 1. In Figure 1, 1 is a substrate, 2 is an electrode, and 3 is a silica film in which copper oxide particles are dispersed. The temperature-sensitive characteristics are shown in Figure 2. [Effects of the Invention] As described above, the humidity sensor of the present invention uses a silica film in which copper oxide particles are dispersed as a humidity sensitive film, so the resistance value is low, so advanced circuit technology and mounting technology are not required. Easy to use. Therefore, it can be widely applied as a low-cost, highly accurate temperature sensor to fields requiring humidity measurement and humidity control.
第１図は本発明の湿度センサの斜視図。
１・・・基板
２・・・電極
３・・・酸化銅粒子を分散させたシリカ膜第２図は、本
発明の湿度センサの感湿特性図。
以上FIG. 1 is a perspective view of the humidity sensor of the present invention. 1...Substrate 2...Electrode 3...Silica film in which copper oxide particles are dispersed FIG. 2 is a diagram showing the humidity sensitivity characteristics of the humidity sensor of the present invention. that's all
Claims (1)
ことを特徴とする湿度センサ。A humidity sensor characterized in that a silica film in which copper oxide particles are dispersed is used as a moisture-sensitive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3875490A JPH03242543A (en) | 1990-02-20 | 1990-02-20 | Moisture sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3875490A JPH03242543A (en) | 1990-02-20 | 1990-02-20 | Moisture sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03242543A true JPH03242543A (en) | 1991-10-29 |
Family
ID=12534080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3875490A Pending JPH03242543A (en) | 1990-02-20 | 1990-02-20 | Moisture sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03242543A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100385037C (en) * | 2005-11-22 | 2008-04-30 | 浙江大学 | Method for preparing nano copper oxide on surface of SiO2 |
-
1990
- 1990-02-20 JP JP3875490A patent/JPH03242543A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100385037C (en) * | 2005-11-22 | 2008-04-30 | 浙江大学 | Method for preparing nano copper oxide on surface of SiO2 |
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