JPH01183148A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPH01183148A JPH01183148A JP63008751A JP875188A JPH01183148A JP H01183148 A JPH01183148 A JP H01183148A JP 63008751 A JP63008751 A JP 63008751A JP 875188 A JP875188 A JP 875188A JP H01183148 A JPH01183148 A JP H01183148A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- signal
- test
- integrated circuit
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000012790 confirmation Methods 0.000 claims abstract description 4
- 238000001514 detection method Methods 0.000 claims description 10
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 9
- 238000012360 testing method Methods 0.000 abstract description 46
- 230000004913 activation Effects 0.000 abstract description 21
- 238000007689 inspection Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000009849 deactivation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路に関し、特に半導体集積回路の
動作確認回路(以下テスト回路と称す)の構成に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit, and particularly to the configuration of an operation check circuit (hereinafter referred to as a test circuit) for a semiconductor integrated circuit.
従来、半導体集積回路は回路機能のテストを実施する際
、故障検出率の向上1機能確認用テストパターン短縮の
ためにテストのための特別な条件(以下テストモードと
称す)を設定する方法が用いられることがあるが、この
場合、専用のテスト端子を使用したり、入力端子の論理
の組合せによりテスト回路活性化信号を発生する等のテ
ストモード設定する回路構成となっていた。Conventionally, when testing the circuit functions of semiconductor integrated circuits, a method has been used to set special test conditions (hereinafter referred to as test modes) in order to improve the failure detection rate and shorten the test pattern for function confirmation. However, in this case, the circuit configuration is such that a test mode is set, such as by using a dedicated test terminal or by generating a test circuit activation signal based on a logic combination of input terminals.
上述した従来の半導体集積回路は、テストモードを設定
する場合、専用のテスト端子を使用したり、入力端子の
論理の組合せによりテスト活性化信号を発生しテストモ
ードを設定する構成となっているので、実動作とは無関
係な専用テスト端子を配置しなければならない、あるい
は複雑な入力条件を外部から設定しなければならない等
の欠点がある。In the conventional semiconductor integrated circuit described above, when setting a test mode, a dedicated test terminal is used or a test activation signal is generated by a logic combination of input terminals to set the test mode. However, there are drawbacks such as the need to arrange dedicated test terminals unrelated to actual operation, or the need to set complicated input conditions from the outside.
本発明の半導体集積回路は、電源電圧検出回路と電源電
圧検出回路からの制御信号を受けて活性化、非活性化す
る動作確認信号発生回路を有している。The semiconductor integrated circuit of the present invention includes a power supply voltage detection circuit and an operation confirmation signal generation circuit that is activated or deactivated in response to a control signal from the power supply voltage detection circuit.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例のブロック図である。FIG. 1 is a block diagram of one embodiment of the present invention.
本実施例における半導体集積回路は電源電圧検出回路1
.テスト回路活性化信号発生回路3および内部回路5に
より構成されている。電源電圧検出回路1は電源ライン
のレベル検出を行ない、制御信号2を介してテスト回路
活性化信号発生回路3に接続され、テスト回路活性化信
号発生回路3の活性/非活性を制御する。テスト回路活
性化信号発生回路3から発生されるテスト回路活性化信
号4はテストモードの設定/解除を制御するための信号
で、内部回路5に入力され、テストモード設定時には入
力・出力信号により内部回路のテストを実行できる。The semiconductor integrated circuit in this embodiment is a power supply voltage detection circuit 1.
.. It is composed of a test circuit activation signal generation circuit 3 and an internal circuit 5. A power supply voltage detection circuit 1 detects the level of a power supply line, is connected to a test circuit activation signal generation circuit 3 via a control signal 2, and controls activation/deactivation of the test circuit activation signal generation circuit 3. The test circuit activation signal 4 generated from the test circuit activation signal generation circuit 3 is a signal for controlling the setting/cancellation of the test mode, and is input to the internal circuit 5, and when the test mode is set, the internal circuit is Can perform circuit tests.
次に第2図により本実施例の動作について説明する。Next, the operation of this embodiment will be explained with reference to FIG.
第2図は電源電圧とテスト回路活性化信号のタイミング
を示したものである。本実施例では半導体集積回路の電
源電圧として+5v電源を使用し、+5Vの電源電圧が
供給されている期間はテスト回路活性化信号4は非活性
(+i L ++レベル)の状態を保持し、半導体集積
回路は通常の動作を行う。FIG. 2 shows the timing of the power supply voltage and the test circuit activation signal. In this embodiment, a +5V power supply is used as the power supply voltage of the semiconductor integrated circuit, and the test circuit activation signal 4 remains inactive (+i L ++ level) while the +5V power supply voltage is supplied. The integrated circuit performs normal operation.
電源電圧が上昇し、予め設定された電圧値、−例として
7■とした場合印加する電源電圧が7vに達し、一定期
間7■以上の状態を保持し、その後5vに低下すると電
源電圧検出回路1より出力される制御信号2を受けてテ
スト回路活性化信号発生回路3が動作し、テスト回路活
性化信号4が活性化(“L II→II HI+レベル
)する。この状態ではテスト回路活性化信号4は通常モ
ードで“L”レベルに対して“H”レベルを保持してい
るため、この信号を利用して内部回路5の動作モード条
件の設定が可能となる。When the power supply voltage rises and is set to a preset voltage value - for example 7■, the applied power supply voltage reaches 7V, maintains a state of 7■ or higher for a certain period of time, and then decreases to 5V, the power supply voltage detection circuit The test circuit activation signal generation circuit 3 operates in response to the control signal 2 output from the test circuit activation signal 1, and the test circuit activation signal 4 is activated (“L II → II HI+ level”). In this state, the test circuit is activated. Since the signal 4 holds the "H" level compared to the "L" level in the normal mode, the operating mode conditions of the internal circuit 5 can be set using this signal.
次に電源電圧が再度上昇し、7Vを越え一定期間保持後
、再び5Vに低下すると電源電圧検出回路1より制御信
号2が発生し、この信号によりテスト回路活性化信号発
生回路3が動作し、テスト回路活性化信号4が非活性化
(”H”→“L”レベル)する。テスト回路活性化信号
4が′L”レベルになると内部回路5に対して設定され
ていたテストモードは解除され、通常の動作モードに戻
る。Next, the power supply voltage rises again, exceeds 7V, is maintained for a certain period of time, and then falls to 5V again.The power supply voltage detection circuit 1 generates a control signal 2, and this signal causes the test circuit activation signal generation circuit 3 to operate. The test circuit activation signal 4 is deactivated (from "H" to "L" level). When the test circuit activation signal 4 becomes 'L' level, the test mode set for the internal circuit 5 is canceled and the normal operation mode returns.
以上述べた動作モードとテストモードの切換えは電源電
圧を5v→7v→5■とパルス的に変化することにより
周期的に実行することができる。The above-mentioned switching between the operation mode and the test mode can be performed periodically by changing the power supply voltage in a pulse manner from 5V to 7V to 5V.
以上説明したように本発明は半導体集積回路に電源電圧
検出回路を設け、印加電源電圧のレベルによりテストモ
ードの設定・解除を行うことができる。このため、テス
トモードの設定・解除を制御するための専用テスト端子
が必要ないため半導体集積回路のパッケージ端子数を最
小限に抑えることができること、あるいは半導体集積回
路の単体検査において入力端子に複雑な条件を設定する
必要がないため、検査効率の向上を図ることができる効
果がある。さらに電源電圧をパルス的に動作電圧以上に
上昇することによりテストモードの設定を行うため、テ
ストモード設定後は電源電圧を高いレベルに保持する必
要がなく、このためテストモードにおいて、電源電圧を
動作条件内で変化したテストが可能となる。As described above, according to the present invention, a semiconductor integrated circuit is provided with a power supply voltage detection circuit, and the test mode can be set or canceled depending on the level of the applied power supply voltage. Therefore, there is no need for a dedicated test terminal to control the setting/cancellation of the test mode, so the number of package terminals for semiconductor integrated circuits can be minimized. Since there is no need to set conditions, there is an effect that the inspection efficiency can be improved. Furthermore, since the test mode is set by increasing the power supply voltage in a pulse manner above the operating voltage, there is no need to maintain the power supply voltage at a high level after setting the test mode. Tests that vary within conditions are possible.
第1図は本発明の半導体集積回路のブロック図、第2図
はタイミング図である。
■・・・・・・電源電圧検出回路、2・・・・・・制御
信号、3・・・・・・テスト回路活性化信号発生回路、
4・・・・・・テスト回路活性化信号、5・・・・・・
内部回路。
代理人 弁理士 内 原 音FIG. 1 is a block diagram of a semiconductor integrated circuit according to the present invention, and FIG. 2 is a timing diagram. ■...Power supply voltage detection circuit, 2...Control signal, 3...Test circuit activation signal generation circuit,
4...Test circuit activation signal, 5...
internal circuit. Agent Patent Attorney Oto Uchihara
Claims (1)
圧を検出する回路と、電源電圧検出回路からの制御信号
を受けて内部回路の一部もしくは全部を特定の動作状態
に切り換える動作確認信号発生回路とを含むことを特徴
とする半導体集積回路。In a semiconductor integrated circuit, there is a circuit that detects the voltage applied to the power supply terminal, and an operation confirmation signal generation circuit that receives a control signal from the power supply voltage detection circuit and switches part or all of the internal circuit to a specific operating state. A semiconductor integrated circuit characterized by comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63008751A JPH01183148A (en) | 1988-01-18 | 1988-01-18 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63008751A JPH01183148A (en) | 1988-01-18 | 1988-01-18 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01183148A true JPH01183148A (en) | 1989-07-20 |
Family
ID=11701632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63008751A Pending JPH01183148A (en) | 1988-01-18 | 1988-01-18 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01183148A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03261878A (en) * | 1990-03-12 | 1991-11-21 | Canon Inc | Electronic equipment |
JPH06102309A (en) * | 1992-08-04 | 1994-04-15 | Internatl Business Mach Corp <Ibm> | Circuit and method for test detection and interruption for bicmos integrated circuit |
JP2009266877A (en) * | 2008-04-22 | 2009-11-12 | Toppan Printing Co Ltd | Circuit and method of evaluating semiconductor |
-
1988
- 1988-01-18 JP JP63008751A patent/JPH01183148A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03261878A (en) * | 1990-03-12 | 1991-11-21 | Canon Inc | Electronic equipment |
JPH06102309A (en) * | 1992-08-04 | 1994-04-15 | Internatl Business Mach Corp <Ibm> | Circuit and method for test detection and interruption for bicmos integrated circuit |
JP2009266877A (en) * | 2008-04-22 | 2009-11-12 | Toppan Printing Co Ltd | Circuit and method of evaluating semiconductor |
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