JPH01181551A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH01181551A JPH01181551A JP410388A JP410388A JPH01181551A JP H01181551 A JPH01181551 A JP H01181551A JP 410388 A JP410388 A JP 410388A JP 410388 A JP410388 A JP 410388A JP H01181551 A JPH01181551 A JP H01181551A
- Authority
- JP
- Japan
- Prior art keywords
- terminals
- external
- external terminals
- flame
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 8
- 239000001257 hydrogen Substances 0.000 claims abstract description 8
- 230000001603 reducing effect Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 abstract description 12
- 239000002699 waste material Substances 0.000 abstract description 10
- 238000007747 plating Methods 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 101150034459 Parpbp gene Proteins 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特に外部端子間の半田くず
等による端子間ショート防止に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and more particularly to prevention of short circuit between external terminals due to solder waste or the like.
従来この種の半導体装置の外゛部端子は、複数個連らな
ったフレーム状態で外部端子を半田メツキを行ない、特
性選別後半導体装置を個々に切断、外部端子成形加工を
行なっていた。Conventionally, the external terminals of this type of semiconductor device were made by soldering a plurality of external terminals in a frame, and after selecting the characteristics, the semiconductor devices were individually cut and external terminals were formed.
上述した従来の半導体装置は、外部端子加工時に半田メ
ツキ時に付着した半田くず、端子加工時に発生するパリ
等が外部端子間に付着し、端子間をショートさせてしま
うという欠点がある。The above-mentioned conventional semiconductor device has a drawback in that solder waste adhering during soldering during external terminal processing, pari generated during terminal processing, etc. adhere between the external terminals, causing a short circuit between the terminals.
本発明の半導体装置は最終外形時において外部端子と、
水素トーチのような還元作用をもつ炎を出すノズルを有
している。この炎により外部端子の一部又は全体を加熱
する。The semiconductor device of the present invention has an external terminal in the final external shape,
It has a nozzle that emits a reducing flame similar to a hydrogen torch. This flame heats part or all of the external terminal.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例である半導体装置１１の外部
端子１２を水素トーチノズル１３より出る炎で外部端子
１２を矢印の方向に移動させ端子間に付着した半田くず
を溶かして端子間ショートをなくする。FIG. 1 shows an embodiment of the present invention in which the external terminals 12 of a semiconductor device 11 are moved in the direction of the arrow using flame emitted from a hydrogen torch nozzle 13 to melt the solder waste adhering between the terminals and short-circuit the terminals. Eliminate.
第２図は従来の半導体装置である外部端子２２０間に半
田くず２３が付着し端子間シＢ−トを起す。FIG. 2 shows a conventional semiconductor device in which solder waste 23 adheres between external terminals 220, causing a seat B between the terminals.
以上説明したように本発明は、水素トーチのような還元
効果をもった炎で端子間を次々に移動することによって
端子間に付着した半田くず等を溶かし端子間を正常にで
きる効果がある。As explained above, the present invention has the effect of melting solder waste etc. adhering between the terminals by moving between the terminals one after another with a flame having a reducing effect such as a hydrogen torch, thereby making the space between the terminals normal.
また、この炎によって外部端子の半田メツキを変質させ
るおそれもあるが、炎の移動速度を調整することにより
熱容量の大きい外部端子は変質させず、熱容量の小さい
端子間の半田くず等のみを溶かすことができる。In addition, there is a risk that this flame may alter the solder plating of the external terminals, but by adjusting the speed of movement of the flame, it is possible to prevent external terminals with large heat capacity from altering, and melt only the solder waste between terminals with small heat capacity. Can be done.
さらに、炎を水素トーチのように還元効果のなるものに
することによって、その後の半田付性の劣化を起すこと
もない。Furthermore, by using a flame that has a reducing effect like a hydrogen torch, subsequent deterioration of solderability will not occur.
第１図は本発明の一実施例図、第２図は従来技術の斜視
図である。
１１．２１・・・・・・半導体装置、１２．２２・・・
・・・外部端子、１３・・・・・・水素トーチノズル、
２３・・・・・・端子間に付着した半田くず。
代理人 弁理士 内 原 音
芥 ／ｒ！ＭFIG. 1 is a diagram showing an embodiment of the present invention, and FIG. 2 is a perspective view of a conventional technique. 11.21... Semiconductor device, 12.22...
...External terminal, 13...Hydrogen torch nozzle,
23...Solder waste stuck between the terminals. Agent Patent Attorney Uchihara Otoka /r! M
Claims (1)
ーチのような還元効果をもった炎によって加熱すること
を特徴とする半導体装置の製法。A method for manufacturing a semiconductor device, which comprises heating a part or the entire external terminal in a final external mold state using a flame having a reducing effect such as a hydrogen torch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP410388A JPH01181551A (en) | 1988-01-11 | 1988-01-11 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP410388A JPH01181551A (en) | 1988-01-11 | 1988-01-11 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01181551A true JPH01181551A (en) | 1989-07-19 |
Family
ID=11575456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP410388A Pending JPH01181551A (en) | 1988-01-11 | 1988-01-11 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01181551A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03114653A (en) * | 1989-09-27 | 1991-05-15 | Taiyo Yuden Co Ltd | Method for removing flux |
| US5075255A (en) * | 1991-02-27 | 1991-12-24 | Motorola, Inc. | Method of removing contaminants from a plated article with a clean burning hydrogen flame |
-
1988
- 1988-01-11 JP JP410388A patent/JPH01181551A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03114653A (en) * | 1989-09-27 | 1991-05-15 | Taiyo Yuden Co Ltd | Method for removing flux |
| US5075255A (en) * | 1991-02-27 | 1991-12-24 | Motorola, Inc. | Method of removing contaminants from a plated article with a clean burning hydrogen flame |
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