JPH01181481A - Photo coupler - Google Patents
Photo couplerInfo
- Publication number
- JPH01181481A JPH01181481A JP63002924A JP292488A JPH01181481A JP H01181481 A JPH01181481 A JP H01181481A JP 63002924 A JP63002924 A JP 63002924A JP 292488 A JP292488 A JP 292488A JP H01181481 A JPH01181481 A JP H01181481A
- Authority
- JP
- Japan
- Prior art keywords
- base
- photo
- diode
- inverse
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 10
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、ＡＣ高電流出力の光結合素子に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to an AC high current output optical coupling device.
〈従来の技術〉
近年、光結合素子は、機器の高機能化や、電子化が進む
につれて、これまでにない機能が要求されつつある。例
えば、電話機では通話回線は極性が力に反転し、又、通
話電流もＭＡＸ １２０ ｍＡと比較的高電流の為、こ
の機器に使用される光結合素子は、ＡＣ高電流出力タイ
プが必要であった０従来から、第６図のようなフォトト
ライアックタイプ、第７図のよりなＦＥＴを用いた双方
向リニア出力タイプが知られている。図において、１１
は発光ダイオード、１２はフォトトライアック、１３は
ジャンジョン型ＦＥＴである。<Prior Art> In recent years, optical coupling devices are required to have unprecedented functions as devices become more sophisticated and become more electronic. For example, in a telephone, the polarity of the telephone line is reversed to power, and the telephone current is relatively high at MAX 120 mA, so the optical coupling element used in this device must be of the AC high current output type. Conventionally, a phototriac type as shown in FIG. 6 and a bidirectional linear output type using a linear FET as shown in FIG. 7 have been known. In the figure, 11
1 is a light emitting diode, 12 is a phototriac, and 13 is a junction FET.
〈発明が解決しようとする問題点〉
しかし、トライアックタイプの場合は、−度、オン状態
になると、出力電流が小さくなるまでオフ状態とならな
い為、動作上、電話機には不向きである。又、リニア出
力タイプは、出力電流が数ｌＯＯμ〜数ｍＡと低電流で
ある欠点があった。′本発明は上記点に鑑みてなされ、
トライアックタイプのような動作上の不都合がなく、か
つ高電流出力がとれる光結合素子を提供することを目的
とする。<Problems to be Solved by the Invention> However, the triac type is unsuitable for use in telephones because once it is turned on, it does not turn off until the output current becomes small. Furthermore, the linear output type has the disadvantage that the output current is low, ranging from several lOOμ to several mA. 'The present invention has been made in view of the above points,
It is an object of the present invention to provide an optical coupling element that does not have operational disadvantages like a triac type and can provide a high current output.
く問題点を解決するための手段〉
本発明では、受光素子としてプレーナ型のフォトトラン
ジスタを用い、ｐ型拡散抵抗をベース抵抗として内蔵し
、このフォトトランジスタを逆直列に接続して構成する
。Means for Solving the Problems> In the present invention, a planar phototransistor is used as a light receiving element, a p-type diffused resistor is built in as a base resistor, and the phototransistors are connected in anti-series.
く作 用〉
上記において、ｐ型ベース抵抗が一方のフォトトランジ
スタの逆バイアス時、逆方向に導通するダイオードの機
能を果し、ＡＣ出力動作が可能となる。しかもトランジ
スタ構成であることによって高電流の出力が得られ、ま
たトライアックと異なり入力電流がオフになると直ちに
出力電流もオフすることができる。Function> In the above, the p-type base resistor functions as a diode that conducts in the reverse direction when one of the phototransistors is reverse biased, thereby enabling AC output operation. Moreover, the transistor configuration allows a high current output to be obtained, and unlike a triac, the output current can also be turned off immediately when the input current is turned off.
〈実施例〉 第１図に本発明一実施例における回路図を示す。<Example> FIG. 1 shows a circuit diagram in one embodiment of the present invention.
１は赤外発光ダイオード等からなる発光素子、２は受光
素子を構成するフォトトランジスタで、ここではダーリ
ントン接続したものを用いている。Reference numeral 1 denotes a light emitting element such as an infrared light emitting diode, and 2 a phototransistor constituting a light receiving element, which is connected in a Darlington manner here.
各ダーリントンフォトトランジスタ２ａ、２ａはそれぞ
れプレーナ型の１チツプで形成され、これを逆直列に接
続している。Each Darlington phototransistor 2a, 2a is formed of a single planar chip, which are connected in anti-series.
第２図にダーリントンフォトトランジスタ２ａのチップ
内構成を示す。Ｂｌ （ベース）、Ｅｌ（エミッタ）、
Ｂｚ （ベース）、Ｅ２ （エミッタ）、Ｃ（コレ
クタ）は第１図の符号と対応するものであり、Ｂ２
（ベース）を形成するｐ 型拡散領域内にＢ２ （ベー
ス）とＥ２（エミッタ）間のｐ型拡散抵抗ＲＢＥを形成
している。第２図に明らかなように、このｐ型拡散ベー
ス抵抗ＲＢＥが逆バイアスにより逆方向ダイオードの役
目を果すこととなる０第１図ではＤでこのダイオードを
示している。FIG. 2 shows the internal structure of the Darlington phototransistor 2a. Bl (base), El (emitter),
Bz (base), E2 (emitter), and C (collector) correspond to the symbols in Figure 1, and B2
A p-type diffusion resistor RBE between B2 (base) and E2 (emitter) is formed within the p-type diffusion region forming the (base). As is clear from FIG. 2, this p-type diffused base resistor RBE acts as a reverse diode when reverse biased. This diode is indicated by D in FIG.
第３図は上記実施例のＶ−Ｉ特性図であり、Ｖ３４（−
縦軸）は端子Ｔ３ ・１４間の出力電圧、Ｉ” ３ ＞
Ｉｆ （横軸）は同出力電流、パラメータのＩＦは端子
Ｔｌ −Ｔ２からの入力電流を示している。本図より明
らかなように、１００ｍＡ等十分高電流でのＡＣ出力動
作が可能であり、また入力電流■１がオフとなると直ち
に出力電流■３−４もオフすることができる。FIG. 3 is a VI characteristic diagram of the above embodiment, and shows V34(-
The vertical axis) is the output voltage between terminals T3 and 14, I”3>
If (horizontal axis) indicates the same output current, and the parameter IF indicates the input current from the terminal Tl-T2. As is clear from the figure, AC output operation is possible at a sufficiently high current such as 100 mA, and when input current (1) is turned off, output current (3-4) can also be turned off immediately.
なお、ｐ型拡散ベース抵抗ＲＢＥの付加により、出力電
流■３−４を若干低下するものの、暗電流を低・減し、
またライズタイムｔｒ、フォールタイムｔｆの改善によ
り応答特性を向上できる利点がある。Note that by adding the p-type diffused base resistor RBE, although the output current (3-4) is slightly lowered, the dark current is reduced.
Furthermore, there is an advantage that response characteristics can be improved by improving rise time tr and fall time tf.
以上の実施例ではダーリントン接続したフォトトランジ
スタを用いたが、出力電流はやや低下するが第４図のよ
うに、シングルフォトトランジスタ２ａ’、２ａ’を逆
直列に接続することによって構成してもよい。ＲＢＥは
前記実施例と同様のｐ型拡散抵抗によるベース抵抗であ
り、Ｄは逆バイアス時に生じるダイオードを示している
。In the above embodiment, Darlington-connected phototransistors were used, but it may also be configured by connecting single phototransistors 2a', 2a' in anti-series as shown in FIG. 4, although the output current will be slightly lower. . RBE is a base resistance formed by a p-type diffused resistor similar to the previous embodiment, and D indicates a diode generated during reverse bias.
また、第５図に示すように発光素子として赤外発光ダイ
オード１．１を逆並列に接続し、ＡＣ人・出力構成の光
結合素子も可能であることはいうまでもない。Furthermore, as shown in FIG. 5, infrared light emitting diodes 1.1 can be connected in antiparallel as light emitting elements to form an optical coupling element having an AC output configuration.
〈発明の効果〉
上述のように本発明によれば、ダイオ−トスタンク等の
部品が不要で、簡便にＡＣ高電流出力の制御が行える有
用な光結合素子が提供できる０<Effects of the Invention> As described above, according to the present invention, it is possible to provide a useful optical coupling element that does not require parts such as a diode tank and can easily control AC high current output.
第１図は本発明の一実施例を示す回路構成図、第２図は
チップ構成図、第３図はＶ−Ｉ特性図、第４図は他の実
施例を示す回路構成図、第５図はさらに他の実施例を示
す回路構成図、第６図は従来例を示す回路構成図、第７
図は他の従来例を示す回路図である。
１・・・発光素子、 ２・・・受光素子、 ２ａ＋
２ａ。
２ａ’ 、２ａ’・・・フォトトランジスタ’ Ｒ
ＢＥ ・・・ｐ型拡散ベース抵抗、 Ｄ・・・ダイオー
ド。
代理人 弁理士 杉 山 毅 至（他１名）第１図
Ｖ３−４Ｃｌ／）
第３図
２ａ″FIG. 1 is a circuit configuration diagram showing one embodiment of the present invention, FIG. 2 is a chip configuration diagram, FIG. 3 is a V-I characteristic diagram, FIG. 4 is a circuit diagram showing another embodiment, and FIG. The figures are circuit configuration diagrams showing still another embodiment, FIG. 6 is a circuit configuration diagram showing a conventional example, and FIG. 7 is a circuit configuration diagram showing a conventional example.
The figure is a circuit diagram showing another conventional example. 1... Light emitting element, 2... Light receiving element, 2a+
2a. 2a', 2a'...phototransistor' R
BE: p-type diffused base resistance, D: diode. Agent Patent attorney Takeshi Sugiyama (and 1 other person) Figure 1 V3-4Cl/) Figure 3 2a''
Claims (1)
レーナ型のフォトトランジスタを用い、前記フォトトラ
ンジスタのｐ型拡散抵抗をベース抵抗として内蔵し、該
ベース抵抗内蔵の２個のフォトトランジスタを逆直列に
接続してなることを特徴とする光結合素子。1. A light-emitting element and a light-receiving element are provided, a planar phototransistor is used as the light-receiving element, a p-type diffused resistor of the phototransistor is built in as a base resistor, and two phototransistors with built-in base resistors are connected in reverse series. An optical coupling element characterized by being connected to.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP292488A JP2596957B2 (en) | 1988-01-08 | 1988-01-08 | Optical coupling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP292488A JP2596957B2 (en) | 1988-01-08 | 1988-01-08 | Optical coupling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01181481A true JPH01181481A (en) | 1989-07-19 |
| JP2596957B2 JP2596957B2 (en) | 1997-04-02 |
Family
ID=11542891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP292488A Expired - Fee Related JP2596957B2 (en) | 1988-01-08 | 1988-01-08 | Optical coupling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2596957B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011511613A (en) * | 2008-02-02 | 2011-04-07 | ジャック、ラッセル | Bipolar power controller |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004129340A (en) * | 2002-09-30 | 2004-04-22 | Mitsumi Electric Co Ltd | Power supply and electronic component |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5450287A (en) * | 1977-09-28 | 1979-04-20 | Toshiba Corp | Insulation output circuit |
| JPS5830169A (en) * | 1981-08-14 | 1983-02-22 | Fujitsu Ltd | Semiconductor electronic circuit |
| JPS58159384A (en) * | 1982-03-17 | 1983-09-21 | Toshiba Corp | Darlington photo-transistor |
| JPS61242071A (en) * | 1985-04-19 | 1986-10-28 | Matsushita Electronics Corp | Composite type transistor |
-
1988
- 1988-01-08 JP JP292488A patent/JP2596957B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5450287A (en) * | 1977-09-28 | 1979-04-20 | Toshiba Corp | Insulation output circuit |
| JPS5830169A (en) * | 1981-08-14 | 1983-02-22 | Fujitsu Ltd | Semiconductor electronic circuit |
| JPS58159384A (en) * | 1982-03-17 | 1983-09-21 | Toshiba Corp | Darlington photo-transistor |
| JPS61242071A (en) * | 1985-04-19 | 1986-10-28 | Matsushita Electronics Corp | Composite type transistor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011511613A (en) * | 2008-02-02 | 2011-04-07 | ジャック、ラッセル | Bipolar power controller |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2596957B2 (en) | 1997-04-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |