JPH01178506A - Modification of polymer - Google Patents
Modification of polymerInfo
- Publication number
- JPH01178506A JPH01178506A JP63000682A JP68288A JPH01178506A JP H01178506 A JPH01178506 A JP H01178506A JP 63000682 A JP63000682 A JP 63000682A JP 68288 A JP68288 A JP 68288A JP H01178506 A JPH01178506 A JP H01178506A
- Authority
- JP
- Japan
- Prior art keywords
- polymer
- ion implantation
- implanted
- ion
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 33
- 238000012986 modification Methods 0.000 title claims description 3
- 230000004048 modification Effects 0.000 title claims description 3
- 238000005468 ion implantation Methods 0.000 claims abstract description 20
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 12
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 5
- 230000000737 periodic effect Effects 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229920003986 novolac Polymers 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 abstract description 4
- 229910052785 arsenic Inorganic materials 0.000 abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 238000005481 NMR spectroscopy Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000002513 implantation Methods 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical group C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- -1 phosphorus ions Chemical class 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000005384 cross polarization magic-angle spinning Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 241000282326 Felis catus Species 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000001460 carbon-13 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/087—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and being incorporated in an organic bonding material
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
Abstract
Description
【発明の詳細な説明】
〔１既 要〕
高分子へのイオン打込みによるその導電性制御を行なう
高分子改質に関し、
従来はイオン打込み元素と高分子との関係がはっきりせ
ず、本発明者が見い出したイオン打込み元素と高分子と
の関係に基づいて、導電性を制御して高分子に与える高
分子改質方法を提供することを目的とし、
共役系を有する高分子に元素周期律表でＶｂ族元素（Ｎ
、 Ａｓ 、 Ｐ 、 Ｓｂ 、 Ｂｉ）の少な
くとも一種類をイオン打込みすることによって高分子の
導電性を制御性良（向上させるように構成する。[Detailed Description of the Invention] [1 Required] Regarding polymer modification in which conductivity is controlled by ion implantation into a polymer, the relationship between the ion implantation element and the polymer has not been clear until now, and the present inventors Based on the relationship between ion implantation elements and polymers discovered by and Vb group element (N
, As, P, Sb, Bi) is ion-implanted to improve the controllability of the conductivity of the polymer.
本発明は、高分子の改質方法に関し、より詳しく述べる
ならば、高分子へのイオン打込みによるその導電性制御
を行なう高分子改質に関する。The present invention relates to a method for modifying a polymer, and more specifically, to a method for modifying a polymer in which conductivity is controlled by implanting ions into the polymer.
高分子の一部には、金属的または半導体的な導電性を示
す導電性高分子があり、その研究・開発がさかんになさ
れている。Some polymers include conductive polymers that exhibit metallic or semiconductor-like conductivity, and research and development of these polymers is being actively conducted.
例えば、ポリフェニレンサルファイド（Ｐ Ｐ Ｓ）、
ポリビニルクロライド（ＰＶＣ）あるいはノボラック樹
脂ベースのフォトレジスト（例えば、フジ・ハント社商
品： ＨＰＲ２０４）の高分子にアルゴン（Ａｒ）、酸
素（０□）等のイオンをイオン打込み（イオン注入）す
ると、導電性が増すことが知られている（例えば、渡邊
、村井、吉日、石谷、石田、台木；日本化学会予稿集、
１９８７年１０月）およびＴ、Ｖｅｎｋａｔｅｓａｎ、
Ｓ、Ｒ，Ｆｏｒｒｅｓｔ、 Ｍ、Ｌ、Ｋａｐｌａｎ＋Ｃ
，Ａ。For example, polyphenylene sulfide (PPS),
When ions such as argon (Ar) and oxygen (0□) are implanted into the polymer of polyvinyl chloride (PVC) or novolac resin-based photoresist (for example, Fuji Hunt product: HPR204), conductivity is achieved. (e.g., Watanabe, Murai, Yoshihichi, Ishitani, Ishida, Daiki; Proceedings of the Chemical Society of Japan,
(October 1987) and Venkatesan, T.
S, R, Forrest, M, L, Kaplan+C
,A.
Ｍｕｒｒａｙ＋ Ｐ、Ｈ，５ｃｌｕ＋＋ｉｄｔ：Ｊ、Ａ
ｐｐｌ、Ｐｈｙｓ、５４ （６） 、 Ｊｕｎｅ１９８
３、 ｐｐ、３１５０〜３１５３参照）。さらに、ナト
リウム（Ｎａ）、アルミニウム（Ａｌ）、ボロン（Ｂ）
、ヨウ素（■）、臭素（Ｂｒ）などをポリアセチレンに
打込むと不純物ドーピング効果が得られることも知られ
ている（例えば、高分子学会高分子表面研究会編二「高
分子表面技術」、および）１．Ｍａｚｕｒｅｋ。Murray+ P, H, 5clu++idt: J, A
ppl, Phys, 54 (6), June 198
3, pp. 3150-3153). Furthermore, sodium (Na), aluminum (Al), boron (B)
It is also known that an impurity doping effect can be obtained by implanting , iodine (■), bromine (Br), etc. into polyacetylene (for example, ``Polymer Surface Technology'' edited by the Polymer Surface Study Group of the Japanese Society of Polymer Science and Technology), and )1. Mazurek.
Ｄ、Ｒ，Ｄａｙ、Ｅ、ＶｂＭａｂｙ、Ｊ、Ｓ、＾ｂｅｌ
；Ｓ、Ｄ’：５ｅｎｔｕｒｉａ、Ｍ、Ｓ。D, R, Day, E, VbMaby, J, S, ^bel
;S, D': 5 enturia, M, S.
Ｄｒｅｓｓｅｌｈａｕｓ ａｎｄ Ｇ、Ｄｒｅｓｓｅｌ
ｈａｕｓ：Ｊ、Ｐｏ１ｙ、Ｓｃｉ、Ｐｏ１ｙ。Dresselhaus and G, Dressel
haus: J, Poly, Sci, Poly.
Ｐｈｙｓ、Ｅｄ、Ｖｏｌ、２１．５３７ ５５Ｈ１５８
３）参照）。Phys, Ed, Vol, 21.537 55H158
3)).
しかしながら、どうしてイオン打込みで不純物ドーピン
グ効果が生じるのかは、今のところ、明確になっていな
い。ただ、導電性高分子の研究から、導電性はイオン注
入による炭化を含めて共役系を発達させることあるいは
長く続く共役系を有することにより与えられることは知
られている。However, it is not yet clear why ion implantation produces an impurity doping effect. However, from research on conductive polymers, it is known that conductivity can be achieved by developing a conjugated system, including carbonization through ion implantation, or by having a long-lasting conjugated system.
Ｎａなとの従来のイオン打込みではドーパントとしての
性質が不明確であってドーパント効果を予想することが
できないなどのように、イオン打込み（イオン注入）元
素と高分子との関係ははっきりしていない。In conventional ion implantation with Na, the properties of the dopant are unclear and the dopant effect cannot be predicted, so the relationship between the ion implantation (ion implantation) element and the polymer is not clear. .
本発明の目的は、本発明者が見い出したイオン打込み元
素と高分子との関係に基づいて、導電性を制御して高分
子に与えることになる高分子改質方法を提供することで
ある。An object of the present invention is to provide a method for modifying a polymer by controlling electrical conductivity based on the relationship between the ion implantation element and the polymer discovered by the inventor.
上述の目的が、高分子に元素周期律表でｖｂ族元素（Ｎ
、Ｐ、Ａｓ、ＳｂおよびＢｉ）の少なくとも一種類をイ
オン打込みすることによって該高分子の導電性を制御性
良く向上させることを特徴とする高分子の改質方法によ
って達成される。The above purpose is to add group VB elements (N
, P, As, Sb, and Bi) by ion-implanting at least one of them to improve the conductivity of the polymer with good controllability.
ｖｂ族元素のＰ（リン）を高分子へイオン打込みすると
、高分子の共役系（その中でもアロマティク部（すなわ
ち、ベンゼン環）に次にアロマティク部）に優先的に作
用して、Ｐのドーズ量が小さいときには複数個のベンゼ
ン環を結ぶために２次元および３次元結合での導電性向
上する。Ｐの場合でそのイオン打込み量（ドーズ量）が
１×１０”個／Ｊを越えると、Ｐは共役系以外のところ
へも多く入っていくので導電性制御がうまくできない。When P (phosphorus), a VB group element, is ion-implanted into a polymer, it acts preferentially on the conjugated system of the polymer (among them, the aromatic part (i.e., benzene ring) and then the aromatic part), and the P When the dose is small, the conductivity in two-dimensional and three-dimensional bonds improves because a plurality of benzene rings are connected. In the case of P, if the ion implantation amount (dose) exceeds 1 x 10'' ions/J, a large amount of P will enter areas other than the conjugated system, making it difficult to control the conductivity well.
以下、添付図面を参照して、本発明の実施態様例および
比較例を含む実験でもって本発明をより詳しく説明する
。Hereinafter, the present invention will be explained in more detail through experiments including embodiment examples and comparative examples of the present invention with reference to the accompanying drawings.
まず、半導体基板（シリコンウェハ）を用意して、この
表面にＳｉＯ□層（厚さ４００ｎｍ）を形成し、その上
にノボラック樹脂ベースのポジ型フォトレジストである
ＨＰＲ２０４を塗布し、１１０℃で２０分のベークを経
て、レジスト膜（高分子膜）を厚さ４００ｎＩｌｌで形
成した。このようにして高分子膜を有するサンプルを作
った。First, a semiconductor substrate (silicon wafer) is prepared, a SiO□ layer (thickness 400 nm) is formed on its surface, and HPR204, which is a novolac resin-based positive photoresist, is applied on top of it. After baking for several minutes, a resist film (polymer film) was formed to a thickness of 400 nm. In this way, a sample with a polymer membrane was produced.
イオン打込みを行なう前に、サンプルのレジスト膜を試
料として核磁気共鳴分析（ＮＭＲ分析）を行なって、第
３図に示すレジスト膜のＣＰ／ＭＡＳ” Ｃ−ＮＭＲス
ペクトルが得られた。Before performing ion implantation, nuclear magnetic resonance analysis (NMR analysis) was performed using the sample resist film as a sample, and the CP/MAS'' C-NMR spectrum of the resist film shown in FIG. 3 was obtained.
次に、作成したサンプルをイオン注入装置内に入れて、
レジスト膜にＰ” （リンイオン）を１×１０１６個
／ ｃａｌおよびｌＸｌ０”個／ ｃｄのドーズ縫で７
０ＫｅＶの加速エネルギーにて打込んだ。イオン打込み
によってレジスト膜は、いわゆる、炭化されて変質膜と
なっており、その表面抵抗を４端針法で測定した。そし
て、この変質膜を試料としてＮＭＲ分析を行ない、第１
図および第２図に示すレジスト膜（変質膜）のＣＰ／Ｍ
ＡＳ １３Ｃ−ＮＭＲスペクトルが得られた。Next, put the prepared sample into the ion implanter,
P" (phosphorus ions) are sewn onto the resist film at a dose of 1 x 1016/cal and lXl0"/cd.
It was implanted with an acceleration energy of 0 KeV. As a result of the ion implantation, the resist film was so-called carbonized into a deteriorated film, and its surface resistance was measured by the four-point needle method. Then, NMR analysis was performed using this altered film as a sample, and the first
CP/M of the resist film (altered film) shown in the figure and Fig. 2
An AS 13C-NMR spectrum was obtained.
比較例として、作成したサンプルのレジスト膜にＡｒ”
（アルゴンイオン）をｌＸｌ０１６個／ｃＸＩＩ、７０
ＫｅＶの加速エネルギーにて打込んだ。同様に炭化され
たレジスト膜（変質膜）の表面抵抗を４端針法で測定し
、ＮＭＲ分析を行なって第４図に示すレジスト膜（変質
膜）のＣＰ／ＭＡＳ ”Ｃ−ＮＭＲスペクトルが得られ
た。As a comparative example, Ar” was applied to the resist film of the prepared sample.
(argon ions) lXl016/cXII, 70
It was implanted with KeV acceleration energy. Similarly, the surface resistance of the carbonized resist film (altered film) was measured using the four-point needle method, and NMR analysis was performed to obtain the CP/MAS ``C-NMR spectrum of the resist film (altered film) shown in Figure 4. It was done.
これらの実験から、イオン打込みされたレジスト膜（変
質膜）の表面抵抗は、抵抗の絶対値はバラツキが大きい
ために特定できないが（サンプルロットにより１０Ω−
ｃｆｆｉ〜ｌＯ３Ω−ｃｍの範囲）、ＰとＡｒとの比較
ではＰ打込みのほうがＡｒ打込みに比べて１０〜５０％
低い抵抗値であった。さらに、Ａｓ（ヒ素）のイオン打
込みの場合には、Ｐ ”ｐ Ａ ｒよりもかなり重い元
素であり炭化具合も違ってくるために簡単には比較でき
ないが、表面抵抗はＰ打込みの場合と同程度の抵抗値で
あった。From these experiments, the surface resistance of the ion-implanted resist film (altered film) cannot be determined because the absolute value of the resistance varies widely (10 Ω- depending on the sample lot).
cffi~lO3Ω-cm), when comparing P and Ar, P implantation is 10 to 50% better than Ar implantation.
The resistance value was low. Furthermore, in the case of As (arsenic) ion implantation, the surface resistance is the same as that of P implantation, although it cannot be easily compared because it is a much heavier element than P''pAr and the degree of carbonization is different. The resistance value was about.
第１図〜第４図のＮＭＲスペクトル図からみて、ＳＰ２
／ＳＰ’の値が下の表に示すごとくイオン打込み前のと
きから、ＰのｌＸｌ０Ｉ６個／ ｃａｔ打込みのときへ
と減少し、さらに打込み量が増えると増大する。From the NMR spectrum diagrams in Figures 1 to 4, SP2
As shown in the table below, the value of /SP' decreases from before ion implantation to when 6 lXl0I/cat of P is implanted, and then increases as the implantation amount increases.
このことから、ＳＦ３がまず変化を受けてから次にＳＦ
３が変化を受けるわけであって、Ｐ（リンイオン）はベ
ンゼン環へ先に入るものと考えられる。これは、イオン
打込み前（第３図）のベンゼン環のＮＭＲシグナルがシ
フトしていることから判断できる。From this, it follows that SF3 undergoes the change first, then SF3
3 undergoes a change, and it is thought that P (phosphorus ion) enters the benzene ring first. This can be determined from the fact that the NMR signal of the benzene ring before ion implantation (FIG. 3) is shifted.
上述の実験ではＰ（リン）で行なったが、Ｐ以外のＶｂ
族の元素は化学的性質がＰと類似しているので、Ｎ、Ａ
ｓ 、Ｓｂ 、Ｂｉについても同様な振舞となり同
様な結果が得られることになる。In the above experiment, P (phosphorus) was used, but Vb other than P
Group elements have chemical properties similar to P, so N, A
Similar behavior will occur for s, Sb, and Bi, and similar results will be obtained.
従来のＮａなどの高分子へのイオン打込みではそのドー
パントとしての性質・作用が不明瞭であって高分子のど
こへ入るのかが不明のためドーパント効果を制御するこ
とはできなかった。本発明によれば、■、族元素のＰを
イオン打込みするときにはアロマチック部へ比較的優先
的に作用するのでドーズ量に応じたドーパント効果が期
待できる。したがって、■５族のイオン打込み元素は制
ｊ’ｆｌ性の良いドーパントとみなすことができて、高
分子に電気的特性を制御しつつ与えることができる。In conventional ion implantation into polymers such as Na, the properties and effects of the dopant as a dopant are unclear, and it is unclear where in the polymer the ions enter into the polymer, making it impossible to control the dopant effect. According to the present invention, when ion-implanting P, which is a group element, it acts relatively preferentially on the aromatic portion, so a dopant effect depending on the dose can be expected. Therefore, the ion-implanted elements of Group 5 can be regarded as dopants with good j'fl control properties, and can be imparted to polymers while controlling their electrical properties.
第１図は、リンをｌＸｌｏｌｂ個／−打込んだレジスト
膜のＮＭＲスペクトルであり、
第２図は、リンを１×１０′７個／ ｃｒＡ打込んだレ
ジスト膜のＮＭＲスペクトルであり、
第３図は、イオン打込み前のレジスト膜のＮＭＲスペク
トルであり、および、
第４図は、アルゴンをｌＸｌ０１６個／ Ｃｌ１１打込
んだレジスト膜のＮＭＲスペクトルである。Fig. 1 is an NMR spectrum of a resist film implanted with lXlolb/- phosphorus, Fig. 2 is an NMR spectrum of a resist film implanted with 1 x 10'7/crA of phosphorus, The figure shows the NMR spectrum of the resist film before ion implantation, and FIG. 4 shows the NMR spectrum of the resist film implanted with 1X1016/Cl11 argon.
Claims (1)
種類をイオン打込みすることによって該高分子の導電性
を制御性良く向上させることを特徴とする高分子の改質
方法。 ２、前記高分子は共役系を有していることを特徴とする
特許請求の範囲第１項記載の方法。 ３、前記共役系はベンゼン環であることを特徴とする特
許請求の範囲第２項記載の方法。 ４、前記高分子はノボラック樹脂であることを特徴とす
る特許請求の範囲第３項記載の方法。 ５、リンのイオン打込み量が１×１０＾１＾７個／ｃｍ
＾２以下であることを特徴とする特許請求の範囲第１項
記載の方法。[Scope of Claims] 1. Modification of a polymer characterized by improving the conductivity of the polymer with good controllability by ion-implanting at least one element of Group Vb in the Periodic Table of Elements into the polymer. quality method. 2. The method according to claim 1, wherein the polymer has a conjugated system. 3. The method according to claim 2, wherein the conjugated system is a benzene ring. 4. The method according to claim 3, wherein the polymer is a novolac resin. 5. Phosphorus ion implantation amount is 1 x 10^1^7 pieces/cm
2. The method according to claim 1, wherein: ^2 or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63000682A JPH01178506A (en) | 1988-01-07 | 1988-01-07 | Modification of polymer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63000682A JPH01178506A (en) | 1988-01-07 | 1988-01-07 | Modification of polymer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01178506A true JPH01178506A (en) | 1989-07-14 |
Family
ID=11480529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63000682A Pending JPH01178506A (en) | 1988-01-07 | 1988-01-07 | Modification of polymer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01178506A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008050473A1 (en) | 2006-10-18 | 2008-05-02 | Meiji Dairies Corporation | Food with depression |
-
1988
- 1988-01-07 JP JP63000682A patent/JPH01178506A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008050473A1 (en) | 2006-10-18 | 2008-05-02 | Meiji Dairies Corporation | Food with depression |
| EP3205214A1 (en) | 2006-10-18 | 2017-08-16 | Meiji Co., Ltd | Food with depression |
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