JPH01177470A - Vacuum surface treating device - Google Patents

Abstract

PURPOSE:To improve treatment efficiency, by a method wherein at least two or more process chambers, having respective discharge systems and partitioned by respective partition valves, are situated in juxtaposition, and two or more chambers for inputting and outputting a base plate are situated in juxtaposition at each chamber through the medium of a second partition valve. CONSTITUTION:Two spatter chambers SP1 and SP2 with which a process chamber is formed are partitioned from each other by a partition valve V forming a first partition valve. Two each of chambers C1, C2, C3, and C4 for inputting and outputting a base plate are coupled to the spatter chambers SP1 and SP2, respectively, through partition valves V1-V4 each forming a second partition valve. The spatter chambers SP1 and SP2 and the chambers C1-C4 for inputting and outputting a base plate are connected to discharge systems P1-P6, respectively. Base plate conveying mechanisms T1 and T2 are situated to the spatter chambers SP1 and SP2, respectively, base plate inputting and outputting mechanism M1-M4 are mounted to the chambers C1-C4, respectively, in a manner to extend at right angles with the base plate conveying mechanisms, and base plate inputting and outputting mechanisms MC1-MC4 are mounted to the chambers C1-C4, respectively.

Description

Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a vacuum surface treatment apparatus configured to be able to process substrates continuously, and this type of apparatus is particularly suitable for continuous sputtering equipment and It can be advantageously used in continuous etching equipment and the like.

[Prior Art] For example, as shown in FIG. 2 of the accompanying drawings, a conventional continuous sputtering apparatus has a plurality of (four in the illustrated example) process chambers A1 to A4 arranged side by side, and Room A
1 into the preparation chamber C for substrates to be processed via the isolation valve B.
It is known that the last process chamber A4 is provided with a chamber E for taking out processed substrates via an isolation valve D.

In an apparatus with this structure, a cassette containing a substrate to be processed (for example, an SI wafer, etc.) is set in the loading chamber C, an empty cassette is set in the unloading chamber E, and the loading chamber C and unloading chamber E are evacuated. After that, isolation valves B and D are opened, and the substrates to be processed are successively sent one by one from the cassette set in the preparation chamber C to the first process chamber A1, and the required processing is carried out in each process chamber A1 to A4. (sputtering, etching, etc.). The substrates that have been subjected to the necessary processing are sequentially stored in empty cassettes set in the take-out chamber E through the isolation valve D. After all the substrates set in the preparation chamber C are processed in this way, each of the preparation chamber C and the unloading chamber E and the process chamber AI
, A4, and the isolation valves B and D are closed, and the preparation chamber C and the unloading chamber E are opened to the atmosphere, and the empty cassette is removed from the preparation chamber C, and the cassette containing the processed substrate is removed from the unloading chamber E. Collect each cassette.

Although the above-mentioned example is of a so-called double-sided load lock type, a continuous sputtering apparatus of a one-sided load lock type is also known, in which the same vacuum chamber is used for loading and unloading of substrates.

[Problems to be Solved by the Invention] Incidentally, in the conventionally known vacuum surface treatment apparatus as described above, for example, in the case of a double-sided load lock system, there is one loading chamber and one unloading chamber. Processing in each process chamber has to be stopped while the chamber is being evacuated and opened to the atmosphere, which poses a problem in that substrate processing efficiency cannot be increased.

Another problem is that when you have multiple process chambers, even if you try to use only one of the multiple process chambers, if the other process chambers are being vented for maintenance, etc. In other words, each process chamber cannot be used independently.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a vacuum surface treatment apparatus that can solve the above-mentioned problems and avoid a decrease in processing efficiency, and also allows a plurality of process chambers to be used independently.

[Means for Solving the Problems] In order to achieve the above object, the vacuum surface treatment apparatus according to the present invention has at least two or more process chambers each having an exhaust system, and a second process chamber between each process chamber. In addition to installing one isolation valve, at least two or more substrate loading/unloading units each having an exhaust system are placed in parallel in each process chamber, and a second isolation valve is installed between the process chamber and each substrate loading/unloading unit. It is characterized by the fact that it is equipped with an isolation valve.

[Function] The vacuum surface treatment apparatus according to the present invention configured as described above has the following effects:
A series mode that allows processing of substrates, removal of processed substrates, and setting of substrates to be processed simultaneously, and a series mode in which each process chamber is used independently to perform different processes or the same process independently and in parallel. It can be used in both parallel mode and parallel mode.

When used in series mode, it is possible to perform, for example, two-layer deposition of different materials or RF cleaning and single-layer deposition simultaneously, and when used in parallel mode, it is possible to perform simultaneous deposition of the same material or A single layer of different materials can be formed.

[Example] Hereinafter, an example of the present invention will be described with reference to FIG. 1 of the accompanying drawings.

FIG. 1 illustrates the case where the present invention is implemented as a sputtering apparatus equipped with two process chambers. , SF3 are separated by a partition pulp V forming a first isolation valve. As shown in the figure, each sputtering chamber SPI, SF3 has two partition valves V1, C2 for loading/unloading substrates; C3, C4 forming a second isolation valve, respectively.
2, ■3, and are connected via V4. In addition, each sputtering chamber SP1, SF3 and each substrate loading/unloading letter C
1, C2; C3, C4 are connected to exhaust systems P1 to P6, respectively. Further, each sputtering chamber SP1, SF2 has a substrate transfer mechanism 'I' which may be a belt conveyor, for example.
``lT2 is provided in a straight line, and the substrate transfer mechanisms T1, T2 are orthogonal to each substrate loading/unloading mechanism C1, C2; C3, C4, which can similarly consist of a belt conveyor. Loading/unloading R structure ML M2, M
3 and M4 are provided, and each of these board loading/unloading mechanisms is in line with similar board loading/unloading mechanisms MCI to MC4 provided in each board loading/unloading character C1, C2; C3, C4, respectively. Arranged.

Note that one sputtering zone in each sputtering chamber is provided as shown by a circle.

The operation of the illustrated apparatus constructed in this way will be explained.

First, to explain the operation when using the device in series mode, the substrate loading/unloading chambers CI and C2 function as substrate loading chambers, and the substrate loading/unloading chambers C3 and C4 function as substrate unloading chambers. do. A cassette (not shown) containing a substrate to be processed is set in the board loading/unloading character C1, and an empty cassette (not shown) for storing the processed substrate is set in the board loading/unloading character C3. (not shown), and exhaust the air for both board loading and unloading using exhaust systems P1 and P3. After exhausting the air, open the partition valves Vl and V3 and load the board.
A single substrate is sent from a cassette set in the take-out C1 to a sputter zone in the sputtering chamber SPI by the substrate loading/unloading mechanism MC1, the substrate loading/unloading mechanism M1, and the substrate transfer mechanism T1, and the required sputtering is performed. . After sputtering is completed, the partition valve (1) between the sputtering chambers is opened and the first substrate is transferred to the sputtering chamber SP2, and the partition valve V is closed to perform sputtering processing in the sputtering chamber SP2. on the other hand,
The second substrate is carried into the sputtering chamber SPI from the substrate loading/unloading station C1, and is subjected to sputtering treatment in the same manner. After the -th substrate is sputtered in the sputtering chamber SP2, the partition valve (3) is opened and the substrate is taken into the substrate loading/unloading station C3.

While processing a predetermined number of substrates in this way, a cassette (not shown) containing the substrates to be processed is set at the board loading/unloading mark C2, and An empty cassette (not shown) for storing processed substrates is set in C4, and exhaust system P2 is installed.
, P4, these two board loading/unloading characters are evacuated. As a result, the board loading/unloading character C1
, immediately use the substrate loading/unloading character C2, the sputtering chamber SPI, SF3, and the substrate loading/unloading character C4 as soon as the processing using the sputtering chamber SPI, SF3 and the substrate loading/unloading character C3 is completed. The process starts. By repeating this cycle of operation, substrates can be processed substantially continuously. In addition, from substrate loading/unloading C1 or C2, sputtering chamber SPI
Partition valve V1 or V2 every time a board is carried into
It can also be operated to close.

Therefore, in the series mode, it is possible to perform, for example, two-layer film formation of different materials or simultaneous implementation of RF cleaning and single-layer film formation.

Next, to explain the case where the apparatus is used in parallel operation mode, the two process chambers SPI and SF3 are used independently, and the subordinate chambers are used for substrate loading/unloading C1 and C.
2 function as a substrate loading chamber and a substrate unloading chamber, respectively. Similarly, the substrate loading/unloading characters C3 and C4 function as a substrate loading chamber and a substrate unloading chamber, respectively. In this case, since processes are performed completely independently in the two process chambers SP1 and SF3, approximately twice the processing capacity can be obtained in the -machine. Therefore, in the parallel mode, it is possible to simultaneously form a film of the same material or to form a single layer of different materials.

By the way, in the illustrated embodiment, an apparatus equipped with two sputtering chambers has been illustrated, but it is of course possible to provide three or more process chambers, and in the illustrated embodiment, the substrate loading and unloading characters are used for each process. Two are provided for each room, but it is also possible to install more in parallel if necessary. Furthermore, the present invention is not limited to the illustrated sputtering apparatus, but can be applied to any surface treatment apparatus that uses vacuum, such as RIF', plasma CVD, etc. other than sputtering.

[Effects of the Invention] As explained above, in the vacuum surface processing apparatus of the present invention, each process chamber is provided with at least two or more substrate loading/unloading positions, so that the substrate loading/unloading positions are Even if there is a period of exhaustion or exposure to the atmosphere, by using the series operation mode, the process can be performed continuously without interruption, and the processing efficiency can be increased by at least 20 to 30% compared to conventional equipment.

Also, depending on the number of process chambers installed, by using it in parallel operation mode, one unit can double or triple the number of process chambers...
It is possible to obtain the processing power of...

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing an embodiment of the present invention, and FIG. 2 is a schematic diagram showing an example of a conventional continuous sputtering apparatus. In the figure, SPl, SP2: Process chambers C1 to C4: Character V for loading or unloading substrates
:First isolation valve ■1~v4 :Second isolation valve P1~P6 :Exhaust system

Claims (1)

[Claims] At least two or more process chambers each having an exhaust system are connected, a first isolation valve is installed between each process chamber, and each process chamber has at least two or more exhaust systems for loading and unloading substrates. A vacuum surface processing apparatus characterized in that chambers are arranged in parallel, and a second isolation valve is installed between the process chamber and each substrate loading/unloading chamber.