JPH01177371A - Horizontal plasma cvd device for producing amorphous silicon photosensitive body - Google Patents
Horizontal plasma cvd device for producing amorphous silicon photosensitive bodyInfo
- Publication number
- JPH01177371A JPH01177371A JP72988A JP72988A JPH01177371A JP H01177371 A JPH01177371 A JP H01177371A JP 72988 A JP72988 A JP 72988A JP 72988 A JP72988 A JP 72988A JP H01177371 A JPH01177371 A JP H01177371A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- amorphous silicon
- plasma cvd
- gas
- cylindrical electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 16
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 108091008695 photoreceptors Proteins 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 abstract description 22
- 239000000843 powder Substances 0.000 abstract description 8
- 239000000376 reactant Substances 0.000 abstract description 4
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 32
- 239000012495 reaction gas Substances 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、非晶質ケイ素感光体製造用横型プラズマＣＶ
Ｄ装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a horizontal plasma CV for manufacturing an amorphous silicon photoreceptor.
Regarding D device.
従来の技術
従来、非晶質ケイ素感光体の製造は、真空槽内に、回転
可能な感光体ドラム保持部材と、その周りに設けた円筒
状電極とを配設した縦型のプラズマＣＶＤ装置を用い、
その電極の一方の側面に設けた反応ガス導入口より反応
ガスを導入して、グロー放電分解させることにより、感
光体ドラム保持部材上に保持された導電性基板上に非晶
質ケイ素感光層を形成させることによって行われている
。Conventional technology Conventionally, amorphous silicon photoreceptors have been manufactured using a vertical plasma CVD apparatus in which a rotatable photoreceptor drum holding member and a cylindrical electrode provided around it are disposed in a vacuum chamber. use,
A reactive gas is introduced through a reactive gas inlet provided on one side of the electrode and decomposed by glow discharge, thereby forming an amorphous silicon photosensitive layer on a conductive substrate held on a photosensitive drum holding member. This is done by forming
第３図は従来の縦型の容量結合型プラズマＣＶＤ装置の
一例を示す。１は密閉反応槽でおり、その中に、モータ
８により回転する円筒状の導電性基板６を電極とし載置
し、一方、複数のガス噴出孔３を設けた剛性の金属より
なる中空対向電極２４を、ドラム状導電性基板に対向し
てそれを取り囲むように設置する。その外側は金属より
なるシールド板２５で覆っている。原料ガスは、ボンベ
２６からガス導入管１２により導入し、グロー放電を起
こさせて導電性基板６上に膜を堆積形成させる。１０は
ＲＦ電源でおり、２７は排気系である。FIG. 3 shows an example of a conventional vertical capacitively coupled plasma CVD apparatus. Reference numeral 1 denotes a closed reaction tank, in which a cylindrical conductive substrate 6 rotated by a motor 8 is placed as an electrode, and a hollow counter electrode made of a rigid metal is provided with a plurality of gas ejection holes 3. 24 is placed opposite to and surrounding the drum-shaped conductive substrate. The outside thereof is covered with a shield plate 25 made of metal. The raw material gas is introduced from the cylinder 26 through the gas introduction pipe 12, causing glow discharge to deposit a film on the conductive substrate 6. 10 is an RF power source, and 27 is an exhaust system.
一方、横型のプラズマＣＶＤ装置としては、第４図に示
すものが知られている（実開昭５８−４５３５９号公報
）。この装置は、感光体ドラム保持部材５の下部に対向
電極２８を設け、下部から反応ガスを導入し、上部から
排気する構造を有している。On the other hand, as a horizontal plasma CVD apparatus, the one shown in FIG. 4 is known (Japanese Utility Model Publication No. 58-45359). This device has a structure in which a counter electrode 28 is provided at the lower part of the photoreceptor drum holding member 5, and a reaction gas is introduced from the lower part and exhausted from the upper part.
発明が解決しようとする課題
非晶質ケイ素感光層を形成するために従来使用されてい
るプラズマＣＶＤ載置は、放電により形成される微粉末
が落下して付着しないようにするために、上記のように
縦型のものとしているが、そのため、量産化の点で問題
がある。即ち、量産化のために導電性基板を積み重ねる
と高さが高くなり、取扱操作が困難になると共に、高さ
の点でもスペース上制約が生じ、量産化にも限度がある
。Problems to be Solved by the Invention Plasma CVD mounting conventionally used to form an amorphous silicon photosensitive layer requires the above-mentioned methods to prevent fine powder formed by discharge from falling and adhering. However, this poses a problem in terms of mass production. That is, when conductive substrates are piled up for mass production, the height increases, making handling difficult, and space constraints also occur in terms of height, which limits mass production.
一方、横型のプラズマＣＶＤ装置を非晶質ケイ素感光層
の製造に使用すると、放電により生じた微粉末が落下し
て付着しないようにするために、感光体ドラム保持部材
の下半分に於いてグロー放電が起るように構成する必要
があった。そのため、生産効率の点で不満足なものであ
った。On the other hand, when a horizontal plasma CVD apparatus is used to manufacture an amorphous silicon photosensitive layer, in order to prevent fine powder generated by discharge from falling and adhering, a glow is placed on the lower half of the photoreceptor drum holding member. It was necessary to configure it so that discharge would occur. Therefore, the production efficiency was unsatisfactory.
本発明は、従来の技術における上記のような問題点に鑑
みてなされたものでおる。The present invention has been made in view of the above-mentioned problems in the conventional technology.
したがって本発明の目的は、操作が簡単でかつ効率よく
行われ、量産化が可能な、非晶質ケイ素感光層を有する
電子写真感光体を製造するためのプラズマＣＶＤ装置を
提供することにおる。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a plasma CVD apparatus for manufacturing an electrophotographic photoreceptor having an amorphous silicon photosensitive layer, which is easy to operate, can be efficiently performed, and can be mass-produced.
課題を解決するための手段
本発明者等は、検討の結果、プラズマＣＶＤ装置によっ
て非晶質ケイ素感光層を形成する場合、微粉末は反応ガ
スの流れの下流部で発生し、上流部では膜状の付着物が
形成されて微粉末にはならないという事実に着目し、本
発明を完成するに至った。Means for Solving the Problems As a result of studies, the present inventors have found that when forming an amorphous silicon photosensitive layer using a plasma CVD apparatus, fine powder is generated in the downstream part of the flow of reaction gas, and the film is formed in the upstream part. The present invention was completed by paying attention to the fact that the powder does not become a fine powder because of the formation of deposits.
本発明の非晶質ケイ素感光体製造用横型プラズマＣＶＤ
装置は、密閉反応槽内に、高周波電源に接続された円筒
状電極をその円筒軸が水平になるように設け、該円状筒
電極の筒内に感光体ドラム保持部材を回転可能に配設し
、該円筒状電極には、その最上部側面に、ガス噴出部を
設け、最下部側面にガス排出部を設けてなることを特徴
とする。Horizontal plasma CVD for manufacturing amorphous silicon photoreceptor of the present invention
The apparatus includes a cylindrical electrode connected to a high-frequency power source in a closed reaction tank, with the cylindrical axis thereof being horizontal, and a photoreceptor drum holding member rotatably disposed within the cylinder of the cylindrical cylindrical electrode. The cylindrical electrode is characterized in that the uppermost side surface thereof is provided with a gas ejection portion, and the lowermost side surface thereof is provided with a gas discharge portion.
本発明を実施例に対応する第１図によって説明する。本
発明のプラズマＣＶＤ装置は、真空に排気される密閉反
応槽１の内部に、円筒状電極２が、その円筒軸が水平に
なるように設けられている。The invention will be explained with reference to FIG. 1, which corresponds to an embodiment. In the plasma CVD apparatus of the present invention, a cylindrical electrode 2 is provided inside a closed reaction tank 1 that is evacuated to a vacuum so that its cylindrical axis is horizontal.
円筒状電極は、高周波電源に連接されていて、その最上
部の側面には、複数のガス噴出孔３が、又、最下部の側
面にはガス排出口４が直線状にに設けられている。この
円筒状電極の内部には、回転可能な二個の感光体ドラム
保持部材５ａ及び５ｂが、平行に並べて配設されている
（第２図）。尚、該二個の感光体ドラム保持部材は、反
応ガス噴出口及び反応ガス排出口を結ぶ直線に対して、
左右両側に対照的な位置に配置されているのが好ましい
。The cylindrical electrode is connected to a high-frequency power source, and has a plurality of gas ejection holes 3 on its top side surface, and a linear gas discharge port 4 on its bottom side surface. . Inside this cylindrical electrode, two rotatable photosensitive drum holding members 5a and 5b are arranged in parallel (FIG. 2). Note that the two photoreceptor drum holding members are aligned with respect to the straight line connecting the reaction gas outlet and the reaction gas outlet.
Preferably, they are arranged in symmetrical positions on both the left and right sides.
これら感光体ドラム保持部材の一端は、それ等を回転さ
せるための駆動部材に連結されている。One end of these photosensitive drum holding members is connected to a driving member for rotating them.
作用
本発明のプラズマＣＶＤ装置においては、感光体ドラム
保持部材にホルダーを介して導電性基板６を単数或いは
複数個載置し、密閉反応槽を排気して真空に保ち、反応
ガス噴出部から反応ガス、例えばシランガスを導入する
。感光体ドラム保持部材は、その一端に取り付けられて
いる駆動部材によって回転させる。円筒状電極２は、高
周波電源に接続されているから、円筒状電極とアースさ
れている感光体ドラム保持部材上の導電性基板６との間
で、グロー放電が行われ、反応ガスが分解される。この
場合、導電性基板は周囲が円筒状電極に囲まれているた
めに、効率よく放電分解反応が行われる。又、反応ガス
は円筒状電極の最上部の側面から導入されるから、放電
によって形成される微粉末が、導電性基板上に落下して
付着することもない。Operation In the plasma CVD apparatus of the present invention, one or more conductive substrates 6 are mounted on the photosensitive drum holding member via a holder, the closed reaction tank is evacuated and kept in vacuum, and the reaction is carried out from the reaction gas injection part. A gas, for example silane gas, is introduced. The photosensitive drum holding member is rotated by a driving member attached to one end thereof. Since the cylindrical electrode 2 is connected to a high frequency power source, glow discharge occurs between the cylindrical electrode and the grounded conductive substrate 6 on the photosensitive drum holding member, and the reaction gas is decomposed. Ru. In this case, since the conductive substrate is surrounded by the cylindrical electrode, the discharge decomposition reaction is efficiently carried out. Furthermore, since the reactive gas is introduced from the top side of the cylindrical electrode, fine powder formed by discharge does not fall and adhere to the conductive substrate.
実施例 以下、図面によって本発明を説明する。Example The present invention will be explained below with reference to the drawings.
第１図は、本発明のプラズマＣＶＤ装置の一実施例の縦
断面図であり、第２図はその横断面図である。FIG. 1 is a longitudinal cross-sectional view of one embodiment of the plasma CVD apparatus of the present invention, and FIG. 2 is a cross-sectional view thereof.
１は、真空に排気するための排気管１１を有する密閉反
応槽であり、基体７上に取り付けられている。この密閉
反応槽の内部には、円筒状Ｎ極２が、支持枠２０上にそ
の円筒軸が水平になるように取り付けられている。この
円筒状電極は高周波電源１０に接続されてあり、そして
その最上部の側面には複数のガス噴出孔３が縦一列に設
けられている。1 is a closed reaction tank having an exhaust pipe 11 for evacuation, and is mounted on the base 7. Inside this closed reaction tank, a cylindrical N pole 2 is mounted on a support frame 20 so that its cylindrical axis is horizontal. This cylindrical electrode is connected to a high frequency power source 10, and a plurality of gas ejection holes 3 are provided in a vertical line on the uppermost side surface.
ガス噴出孔の外側には、ガス反応ガスを導入するための
ガス導入管１２と連通ずるガス流路筒１３が取り付けら
れている。一方、円筒状電極の最下部の側面には、反応
ガスを排出するためのガス排出口４が直線状に設けられ
ている。A gas passage tube 13 is attached to the outside of the gas ejection hole and communicates with a gas introduction pipe 12 for introducing a gas reaction gas. On the other hand, a gas outlet 4 for discharging the reaction gas is provided in a straight line on the lowermost side surface of the cylindrical electrode.
この円筒状電極の内部には、例えばアルミニウム基板等
の導電性基板６を支持するための二個の感光体ドラム保
持部材５ａ及び５ｂが左右対称な位置に配設されている
。即ちガス噴出孔３とガス排出口４とを結ぶ直線を対称
軸として、左右両側に設けられている。これ等の感光体
ドラム保持部材は、それぞれ内部に加熱部材１４ａ及び
１４ｂを備えており、そして回転可能に構成されている
。即ち、各感光体ドラム保持部材の一端にはフランジ１
６が形成されており、それぞれの支持板１７に適当な手
段によって固定されている。各支持板１７は、モータ８
及び伝導手段９に連結されたそれぞれの回転軸１８によ
って回転自在に保持されている。尚、各回転軸１８の周
りは、密閉反応槽１内が真空状態に維持されるように周
知の密封手段、例えば磁気シールによってシールされて
いる。又、感光体ドラム保持部材の他端は、支柱２１に
取り付けられた接合部材２２によって回転可能に支持さ
れている。Inside this cylindrical electrode, two photosensitive drum holding members 5a and 5b for supporting a conductive substrate 6, such as an aluminum substrate, are arranged in symmetrical positions. That is, they are provided on both the left and right sides with the straight line connecting the gas ejection hole 3 and the gas discharge port 4 as an axis of symmetry. These photosensitive drum holding members each include heating members 14a and 14b inside and are configured to be rotatable. That is, a flange 1 is provided at one end of each photoreceptor drum holding member.
6 are formed and fixed to each support plate 17 by suitable means. Each support plate 17 supports a motor 8
and rotatably held by respective rotating shafts 18 connected to the transmission means 9. The area around each rotating shaft 18 is sealed by a well-known sealing means, such as a magnetic seal, so that the inside of the closed reaction tank 1 is maintained in a vacuum state. Further, the other end of the photosensitive drum holding member is rotatably supported by a joining member 22 attached to a support column 21.
上記のプラズマＣＶＤ装置を用いて電子写真感光体を製
造するには、感光体ドラム保持部材５ａ及び５ｂに導電
性基板６をホールダ−１９を介して複数個（図面におい
ては３個）載置し、密閉反応槽１内を真空に排気し、一
方、例えばシランガスをボンベから、ガス導入管１２に
よってガス流路筒１３に導入し、ガス噴出孔３より円筒
状電極２内に噴出させる。感光体ドラム保持部材は、モ
ータ８及び伝導手段９よりなる駆動部材によって回転さ
せるが、回転方向は、同一方向であってもよいし、互い
に反対方向でおってもよい。円筒状電極２には、高周波
電源１０によって所定の電圧が印加されているため、円
筒状電極と、接地電圧に維持された導電性基板６との間
でグロー放電が起こり、シランガスを分解して導電性基
板上に非晶質ケイ素膜が形成する。反応ガスは、排出口
４から排出され、排気管１１より密閉反応槽外に排出さ
れる。To manufacture an electrophotographic photoreceptor using the plasma CVD apparatus described above, a plurality of conductive substrates 6 (three in the drawing) are placed on the photoreceptor drum holding members 5a and 5b via holders 19. The inside of the closed reaction tank 1 is evacuated, and on the other hand, for example, silane gas is introduced from a cylinder into the gas flow pipe 13 through the gas introduction pipe 12 and is ejected into the cylindrical electrode 2 from the gas injection hole 3. The photoreceptor drum holding member is rotated by a driving member consisting of a motor 8 and a transmission means 9, and the rotation directions may be in the same direction or in opposite directions. Since a predetermined voltage is applied to the cylindrical electrode 2 by the high-frequency power source 10, a glow discharge occurs between the cylindrical electrode and the conductive substrate 6 maintained at the ground voltage, decomposing the silane gas. An amorphous silicon film is formed on the conductive substrate. The reaction gas is discharged from the discharge port 4 and then discharged from the exhaust pipe 11 to the outside of the closed reaction tank.
上記の場合、二つの感光体ドラム保持部材５ａ及び５ｂ
は、ガス噴出孔３とガス排出口４とを結ぶ線に対して、
互いに対称の位置に配置されているから、反応ガスは、
両者の周りを同一の状態で掻き乱されることなく通過し
、したがって、両者の上に載置されている導電性基板上
に形成される非晶質ケイ素膜は、互いに同じ条件で形成
されることになるので、製品にばらつきの生じることが
ないという利点がめる。In the above case, the two photoreceptor drum holding members 5a and 5b
is relative to the line connecting the gas nozzle 3 and the gas discharge port 4,
Because they are arranged in symmetrical positions, the reactant gases are
It passes around both in the same state without being disturbed, and therefore the amorphous silicon film formed on the conductive substrate placed on both is formed under the same conditions. Therefore, there is an advantage that there will be no variation in products.
尚、上記実施例においては、二つの感光体ドラム保持部
材を設けた場合について説明をしたが、単一の感光体ド
ラム保持部材を設けるように構成してもよい。In the above embodiment, the case where two photoreceptor drum holding members are provided has been described, but the structure may be such that a single photoreceptor drum holding member is provided.
発明の効果
本発明のプラズマＣＶＤ装置は、上記の構成を有するか
ら、非晶質ケイ素感光層を有する電子写真感光体の製造
を、簡単にかつ効率よく行なうことができ、量産化する
のに適している。Effects of the Invention Since the plasma CVD apparatus of the present invention has the above configuration, it is possible to easily and efficiently manufacture an electrophotographic photoreceptor having an amorphous silicon photosensitive layer, and is suitable for mass production. ing.
又、本発明において、２個の感光体ドラム保持部材を水
平方向の対称な位置に配設した場合には、製品間にばら
つきのないものが得られる。Furthermore, in the present invention, when the two photosensitive drum holding members are arranged at symmetrical positions in the horizontal direction, products with no variation between products can be obtained.
第１図及び第２図は本発明の一実施例であって、第１図
は第２図Ａ−Ａ線の断面図、第２図は第１図Ｂ−Ｂ線の
断面図、第３図は従来の非晶質ケイ素感光体製造用プラ
ズマＣＶＤ装置の構成図、第４図は従来の横型プラズマ
ＣＶＤ装置の断面図でおる。
１・・・密閉反応槽、２・・・円筒状電極、３・・・ガ
ス噴出孔、４・・・ガス排出口、５ａ、５ｂ・・・感光
体ドラム保持部材、６・・・導電性基板、８・・・モー
タ、９・・・伝導手段、１０・・・高周波電源、１２・
・・ガス導入管、１３・・・ガス流路筒。
第３図
第４図1 and 2 show one embodiment of the present invention, in which FIG. 1 is a cross-sectional view taken along the line A-A in FIG. 2, FIG. 2 is a cross-sectional view taken along the line B-B in FIG. The figure is a block diagram of a conventional plasma CVD apparatus for manufacturing an amorphous silicon photoreceptor, and FIG. 4 is a sectional view of a conventional horizontal plasma CVD apparatus. DESCRIPTION OF SYMBOLS 1... Sealed reaction tank, 2... Cylindrical electrode, 3... Gas blowout hole, 4... Gas discharge port, 5a, 5b... Photosensitive drum holding member, 6... Conductive Substrate, 8... Motor, 9... Conduction means, 10... High frequency power supply, 12.
...Gas introduction pipe, 13...Gas flow pipe. Figure 3 Figure 4
Claims (1)
電極をその円筒軸が水平になるように設け、該円状筒電
極の筒内に感光体ドラム保持部材を水平方向に回転可能
に配設し、該円筒状電極の最上部側面に、ガス噴出部を
設け、最下部側面にガス排出部を設けてなることを特徴
とする非晶質ケイ素感光体製造用横型プラズマＣＶＤ装
置。(1) A cylindrical electrode connected to a high-frequency power source is installed in a closed reaction tank so that its cylindrical axis is horizontal, and a photoreceptor drum holding member can be rotated horizontally within the cylinder of the cylindrical electrode. 1. A horizontal plasma CVD apparatus for manufacturing an amorphous silicon photoreceptor, characterized in that the cylindrical electrode is provided with a gas ejection part on the uppermost side surface and a gas discharge part on the lowermost side surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP72988A JPH01177371A (en) | 1988-01-07 | 1988-01-07 | Horizontal plasma cvd device for producing amorphous silicon photosensitive body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP72988A JPH01177371A (en) | 1988-01-07 | 1988-01-07 | Horizontal plasma cvd device for producing amorphous silicon photosensitive body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01177371A true JPH01177371A (en) | 1989-07-13 |
Family
ID=11481820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP72988A Pending JPH01177371A (en) | 1988-01-07 | 1988-01-07 | Horizontal plasma cvd device for producing amorphous silicon photosensitive body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01177371A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009019260A (en) * | 2007-07-13 | 2009-01-29 | Ookouchi Kinzoku Kk | Manufacturing apparatus for cutting tool having diamond like carbon coating |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62146262A (en) * | 1985-12-20 | 1987-06-30 | Fuji Electric Co Ltd | Apparatus for producing electrophotographic sensitive body |
| JPS62146263A (en) * | 1985-12-20 | 1987-06-30 | Fuji Electric Co Ltd | Apparatus for producing electrophotographic sensitive body |
-
1988
- 1988-01-07 JP JP72988A patent/JPH01177371A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62146262A (en) * | 1985-12-20 | 1987-06-30 | Fuji Electric Co Ltd | Apparatus for producing electrophotographic sensitive body |
| JPS62146263A (en) * | 1985-12-20 | 1987-06-30 | Fuji Electric Co Ltd | Apparatus for producing electrophotographic sensitive body |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009019260A (en) * | 2007-07-13 | 2009-01-29 | Ookouchi Kinzoku Kk | Manufacturing apparatus for cutting tool having diamond like carbon coating |
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