JPH0117262B2 - - Google Patents
Info
- Publication number
- JPH0117262B2 JPH0117262B2 JP58204677A JP20467783A JPH0117262B2 JP H0117262 B2 JPH0117262 B2 JP H0117262B2 JP 58204677 A JP58204677 A JP 58204677A JP 20467783 A JP20467783 A JP 20467783A JP H0117262 B2 JPH0117262 B2 JP H0117262B2
- Authority
- JP
- Japan
- Prior art keywords
- formula
- semiconductor device
- aromatic
- resin
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 125000003118 aryl group Chemical group 0.000 claims description 18
- 229920000642 polymer Polymers 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000004697 Polyetherimide Substances 0.000 claims description 12
- 229920001601 polyetherimide Polymers 0.000 claims description 12
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 150000004984 aromatic diamines Chemical class 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 2
- OYRLVVDVIBISKW-UHFFFAOYSA-N 4,5-dinitroisoindole-1,3-dione Chemical compound [O-][N+](=O)C1=CC=C2C(=O)NC(=O)C2=C1[N+]([O-])=O OYRLVVDVIBISKW-UHFFFAOYSA-N 0.000 description 2
- MQAHXEQUBNDFGI-UHFFFAOYSA-N 5-[4-[2-[4-[(1,3-dioxo-2-benzofuran-5-yl)oxy]phenyl]propan-2-yl]phenoxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC2=CC=C(C=C2)C(C)(C=2C=CC(OC=3C=C4C(=O)OC(=O)C4=CC=3)=CC=2)C)=C1 MQAHXEQUBNDFGI-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- -1 ether acid anhydride Chemical class 0.000 description 2
- 238000006068 polycondensation reaction Methods 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- XLHUBROMZOAQMV-UHFFFAOYSA-N 1,4-benzosemiquinone Chemical group [O]C1=CC=C(O)C=C1 XLHUBROMZOAQMV-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- RLYCRLGLCUXUPO-UHFFFAOYSA-N 2,6-diaminotoluene Chemical compound CC1=C(N)C=CC=C1N RLYCRLGLCUXUPO-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- RXNYJUSEXLAVNQ-UHFFFAOYSA-N 4,4'-Dihydroxybenzophenone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1 RXNYJUSEXLAVNQ-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- VWGKEVWFBOUAND-UHFFFAOYSA-N 4,4'-thiodiphenol Chemical compound C1=CC(O)=CC=C1SC1=CC=C(O)C=C1 VWGKEVWFBOUAND-UHFFFAOYSA-N 0.000 description 1
- NZGQHKSLKRFZFL-UHFFFAOYSA-N 4-(4-hydroxyphenoxy)phenol Chemical compound C1=CC(O)=CC=C1OC1=CC=C(O)C=C1 NZGQHKSLKRFZFL-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- LDFYRFKAYFZVNH-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 LDFYRFKAYFZVNH-UHFFFAOYSA-N 0.000 description 1
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 1
- ZOFTWRZAZQVHGM-UHFFFAOYSA-N 4-[4-[4-(4-hydroxyphenoxy)phenyl]sulfonylphenoxy]phenol Chemical compound C1=CC(O)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(O)=CC=3)=CC=2)C=C1 ZOFTWRZAZQVHGM-UHFFFAOYSA-N 0.000 description 1
- PJCCVNKHRXIAHZ-UHFFFAOYSA-N 4-[4-[[4-(4-aminophenoxy)phenyl]methyl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1CC(C=C1)=CC=C1OC1=CC=C(N)C=C1 PJCCVNKHRXIAHZ-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 229920002614 Polyether block amide Polymers 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- ZLSMCQSGRWNEGX-UHFFFAOYSA-N bis(4-aminophenyl)methanone Chemical compound C1=CC(N)=CC=C1C(=O)C1=CC=C(N)C=C1 ZLSMCQSGRWNEGX-UHFFFAOYSA-N 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- CNHDIAIOKMXOLK-UHFFFAOYSA-N toluquinol Chemical compound CC1=CC(O)=CC=C1O CNHDIAIOKMXOLK-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、半導体素子の表面を特定のポリイミ
ド重合体で保護コートした樹脂封止型半導体装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a resin-sealed semiconductor device in which the surface of a semiconductor element is protectively coated with a specific polyimide polymer.
従来から素子の表面をポリイミド重合体で保護
コートした半導体装置は知られていた。しかしな
がら、芳香族ポリイミド系重合体は一般に有機溶
剤に不溶であるため、コーテイングする際には、
その前駆体であるポリアミド酸の溶液をコートし
た後、溶剤除去とともに、加熱閉環反応を起こさ
せる。したがつて、処理温度は高温を必要とする
が、高温処理は作業性という点から以外にも、高
温ではボンデイング部に好ましからざるAu―Al
の合金が生成し、半導体装置の耐湿性が低下しや
すいという点からも好ましくない。
2. Description of the Related Art Semiconductor devices in which the surface of an element is protectively coated with a polyimide polymer have been known. However, aromatic polyimide polymers are generally insoluble in organic solvents, so when coating them,
After coating with a solution of polyamic acid, which is its precursor, the solvent is removed and a ring-closing reaction is caused by heating. Therefore, a high processing temperature is required, but high-temperature processing not only improves workability, but high temperatures also create undesirable Au-Al in the bonding area.
It is also unfavorable because an alloy of
本発明は、上記の欠点に鑑み、低温処理可能な
耐熱性ポリイミドすなわち、溶剤可溶型の芳香族
ポリイミド重合体でコートした半導体装置を提供
することを目的とする。
In view of the above drawbacks, it is an object of the present invention to provide a semiconductor device coated with a heat-resistant polyimide that can be processed at low temperatures, that is, a solvent-soluble aromatic polyimide polymer.
本発明は、素子表面が、一般式（）
〔但し、Ar及びＲは、二価の芳香族残基を示
す。〕で表わされるくり返し単位を有する芳香族
ポリエーテルイミド重合体でコートされているこ
とを特徴とする樹脂封止型半導体装置にある。
In the present invention, the element surface has the general formula () [However, Ar and R represent divalent aromatic residues. ] A resin-sealed semiconductor device characterized by being coated with an aromatic polyetherimide polymer having repeating units represented by the following.
本発明において、芳香族ポリエーテルイミド重
合体からなるコート膜の厚さは、１〜300μmの範
囲から選ばれる。特に、半導体装置がメモリであ
り、α線によるソフトエラーを防止するため、保
護コートする場合には、30〜100μmが選ばれる。 In the present invention, the thickness of the coating film made of aromatic polyetherimide polymer is selected from the range of 1 to 300 μm. In particular, when the semiconductor device is a memory and a protective coating is applied to prevent soft errors caused by alpha rays, a thickness of 30 to 100 μm is selected.
本発明において用いられる芳香族ポリエーテル
アミド重合体は、一般式（）で示される芳香族
ジアミンのジニトロフタルイミドと一般式（）
のアルカリ金属ジフエノキシドとの重縮合
あるいは、一般式（）のビス（エーテル酸無
水物）と一般式（）の芳香族ジアミンとの重縮
合によつて
得られる（ただし、上記式（）〜（）におい
て、Ar及びＲは二価の芳香族残基であり、Ｍは
アルカリ金属をあらわす）。 The aromatic polyetheramide polymer used in the present invention is composed of dinitrophthalimide of an aromatic diamine represented by the general formula () and the aromatic diamine dinitrophthalimide represented by the general formula ().
Polycondensation of with alkali metal diphenooxide Alternatively, by polycondensation of the bis(ether acid anhydride) of the general formula () and the aromatic diamine of the general formula () (However, in the above formulas () to (), Ar and R are divalent aromatic residues, and M represents an alkali metal).
本発明において用いられる芳香族ポリエーテル
イミドの製造に用いられる二価フエノールの具体
例をあげると、２，２―ビス（４―ヒドロキシフ
エニル）プロパン、４，4′―ジヒドロキシジフエ
ニルエーテル、ハイドロキノン、カテコール、ビ
ス（４―ヒドロキシフエニル）メタン、４，4′―
ジヒドロキシジフエニルスルホン、４，4′―ジヒ
ドロキシベンゾフエノン、４，4′―ジヒドロキシ
ジフエニルスルフイド、２，２―ビス（４―ヒド
ロキシフエニル）―１，１，１，３，３，３―ヘ
キサフルオロプロパン、２，５―ジヒドロキシト
ルエン、４，4′―ジヒドロキシ―３，3′―ジメチ
ルジフエニル、３，3′，５，5′―テトラメチル―
４，4′―ジヒドロキシジフエニル、ビス〔４―
（４―ヒドロキシフエノキシ）フエニル〕スルホ
ン、ビス〔４―（４―ヒドロキシフエノキシ）フ
エニル〕エーテル、４，4′―（Ｐ―ヒドロキシフ
エノキシ）ベンゾフエノンなどがあげられる。 Specific examples of dihydric phenols used in the production of aromatic polyetherimide used in the present invention include 2,2-bis(4-hydroxyphenyl)propane, 4,4'-dihydroxydiphenyl ether, and hydroquinone. , catechol, bis(4-hydroxyphenyl)methane, 4,4'-
Dihydroxydiphenyl sulfone, 4,4'-dihydroxybenzophenone, 4,4'-dihydroxydiphenyl sulfide, 2,2-bis(4-hydroxyphenyl)-1,1,1,3,3, 3-hexafluoropropane, 2,5-dihydroxytoluene, 4,4'-dihydroxy-3,3'-dimethyldiphenyl, 3,3',5,5'-tetramethyl-
4,4'-dihydroxydiphenyl, bis[4-
Examples include (4-hydroxyphenoxy)phenyl]sulfone, bis[4-(4-hydroxyphenoxy)phenyl]ether, and 4,4'-(P-hydroxyphenoxy)benzophenone.
また、本発明に用いられる芳香族ポリエーテル
イミドの製造に用いられる芳香族ジアミンの例を
あげると、ｍ―フエニレンジアミン、ｐ―フエニ
レンジアミン、４，4′―ジアミノジフエニルプロ
パン、４，4′―ジアミノフエニルスルフイド、
４，4′―ジアミノジフエニルスルホン、４，4′―
ジアミノジフエニルエーテル、１，５―ジアミノ
ナフタリン、２，４―ジアミノトルエン、２，６
―ジアミノトルエン、４，4′―ジアミノジフエニ
ルメタン、４，4′―ジアミノベンゾフエノン、ビ
ス〔４―（４―アミノフエノキシ）フエニル〕ス
ルホン、２，２―ビス〔４―（４―アミノフエノ
キシ）フエニル〕プロパン、２，２―ビス〔４―
（４―アミノフエノキシ）フエニル〕１，１，１，
３，３，３―ヘキサフルオロプロパン、４，4′―
（ｐ―アミノフエノキシ）ベンゾフエノン、ビス
〔４（４―アミノフエノキシ）フエニル〕メタン、
ビス〔４（４―アミノフエノキシ）フエニル〕エ
ーテルなどがあげられる。 In addition, examples of aromatic diamines used in the production of aromatic polyetherimide used in the present invention include m-phenylene diamine, p-phenylene diamine, 4,4'-diaminodiphenylpropane, 4, 4′-diaminophenyl sulfide,
4,4'-diaminodiphenylsulfone, 4,4'-
Diaminodiphenyl ether, 1,5-diaminonaphthalene, 2,4-diaminotoluene, 2,6
-Diaminotoluene, 4,4'-diaminodiphenylmethane, 4,4'-diaminobenzophenone, bis[4-(4-aminophenoxy)phenyl]sulfone, 2,2-bis[4-(4-aminophenoxy)] phenyl]propane, 2,2-bis[4-
(4-aminophenoxy)phenyl]1,1,1,
3,3,3-hexafluoropropane, 4,4'-
(p-aminophenoxy)benzophenone, bis[4(4-aminophenoxy)phenyl]methane,
Examples include bis[4(4-aminophenoxy)phenyl]ether.
前記芳香族ポリエーテルイミド重合体は、ジメ
チルホルムアミド、ジメチルアセトアミド、Ｎ―
メチルピロリドン、ジメチルスルホキシド等に溶
解して、ワニスの形態にし、これを素子に塗布し
て100〜200℃の温度条件にて製膜することができ
る。その後、たとえば、エポキシ樹脂、ジアリル
フタレート樹脂、フエノール樹脂、不飽和ポリエ
ステル樹脂、シリコーン樹脂などで封止される。 The aromatic polyetherimide polymer includes dimethylformamide, dimethylacetamide, N-
It can be dissolved in methylpyrrolidone, dimethylsulfoxide, etc. to form a varnish, and coated on an element to form a film at a temperature of 100 to 200°C. Thereafter, it is sealed with, for example, epoxy resin, diallyl phthalate resin, phenolic resin, unsaturated polyester resin, silicone resin, or the like.
実施例 １
52重量部の２，２―ビス〔４―（３，４―ジカ
ルボキシフエノキシ）フエニル〕プロパン二無水
物、41重量部の２，２―ビス〔４―アミノフエノ
キシ）フエニル〕プロパン、1000重量部のＮ―メ
チルピロリドン及び300重量部のトルエンの混合
物を室温で約１時間撹拌した後、150℃で約１時
間還流した。この際、生成する水を共沸により留
去した。更にトルエン200部を加えて、トルエン
を留去しながら180℃まで昇温した後、冷却した。
このようにして得られた芳香族ポリエーテルイミ
ド重合体をＮ―メチルピロリドン15％溶液に調製
した。これをMOS型LSIに塗布し、100℃、30
分、150℃、１時間、200℃、２時間加熱して厚さ
約40μmの膜を素子表面に形成した。
Example 1 52 parts by weight of 2,2-bis[4-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride, 41 parts by weight of 2,2-bis[4-aminophenoxy)phenyl]propane , 1000 parts by weight of N-methylpyrrolidone, and 300 parts by weight of toluene were stirred at room temperature for about 1 hour, and then refluxed at 150° C. for about 1 hour. At this time, the water produced was distilled off azeotropically. Furthermore, 200 parts of toluene was added, and the temperature was raised to 180° C. while distilling off toluene, and then cooled.
The aromatic polyetherimide polymer thus obtained was prepared into a 15% N-methylpyrrolidone solution. Apply this to a MOS type LSI and heat it at 100℃ for 30 minutes.
A film with a thickness of about 40 μm was formed on the surface of the device by heating at 150° C. for 1 hour and at 200° C. for 2 hours.
その後、エポキシ樹脂でトランスフア成形し封
止した。この半導体装置の80℃、90％RH、1000
時間後の故障率は0/90と優れていた。 Thereafter, it was transfer molded and sealed with epoxy resin. 80℃, 90%RH, 1000 for this semiconductor device
The failure rate after hours was excellent at 0/90.
実施例 ２
0.1モルの２，２―ビス〔４―（３，４―ジカ
ルボキシフエノキシ）フエニル〕プロパン二無水
物と、0.1モルのメタフエニレンジアミンとより
実施例１と同様にして芳香族ポリエーテルイミド
重合体を得た。同様にして固形分15％のワニスを
調製し、MOS型LSIに塗布した。この半導体装
置の80℃、90％の耐湿性は良好であつた。Example 2 Aromatic production in the same manner as in Example 1 with 0.1 mol of 2,2-bis[4-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride and 0.1 mol of metaphenylenediamine A group polyetherimide polymer was obtained. A varnish with a solid content of 15% was prepared in the same manner and applied to a MOS LSI. This semiconductor device had good moisture resistance at 80°C and 90%.
実施例 ３
43.6部のビス〔４―（４―ヒドロキシフエノキ
シ）フエニル〕スルホン、８部の水酸化ナトリウ
ムを50部の水に溶解したNaOH水溶液、30部の
ジメチルスルホキシド及び100部のベンゼンから
なる混合物を撹拌しながら加熱し、水分をベンゼ
ンと共沸することにより除去した。次に45.8部の
１，３―ジ〔４―ニトロフタルイミノ〕ベンゼン
及び300部のジメチルスルホキシドを加えた。120
℃で２時間反応させた後、反応混合物をメタノー
ルに注ぎ、重合体を沈でんさせた。得られた粉末
を乾燥後、ジメチルホルムアミドに溶解し、
MOS型に塗布し、80℃、30分、150℃、１時間、
180℃、２時間加熱した後、エポキシ樹脂で封止
した。この半導体装置の耐湿性は良好であつた。Example 3 From 43.6 parts of bis[4-(4-hydroxyphenoxy)phenyl]sulfone, 8 parts of an aqueous NaOH solution of sodium hydroxide dissolved in 50 parts of water, 30 parts of dimethyl sulfoxide and 100 parts of benzene. The mixture was heated with stirring, and water was removed by azeotroping with benzene. Then 45.8 parts of 1,3-di[4-nitrophthalimino]benzene and 300 parts of dimethyl sulfoxide were added. 120
After reacting for 2 hours at °C, the reaction mixture was poured into methanol to precipitate the polymer. After drying the obtained powder, it was dissolved in dimethylformamide,
Apply to MOS mold, 80℃, 30 minutes, 150℃, 1 hour,
After heating at 180°C for 2 hours, it was sealed with epoxy resin. This semiconductor device had good moisture resistance.
Claims (1)
す〕で表されるくり返し単位を有する芳香族ポリ
エーテルイミド重合体でコートされていることを
特徴とする樹脂封止型半導体装置。 ２ 芳香族ポリエーテルイミド重合体が、一般式
（） 〔但し、式中Arは、【式】 【式】【式】 【式】 【式】 【式】 【式】 【式】 【式】 【式】 【式】 【式】 【式】 【式】よりなる群から選択 した基を示し、ＸはSO2，CO，【式】 【式】またはCH2 を示す〕で表されるくり返し単位を有する重合体
である特許請求の範囲第１項記載の樹脂封止型半
導体装置。 ３ 芳香族ポリエーテルイミド重合体が、一般式
（） 〔但し、式中、Ｒは、メタフエニレン、パラフ
エニレン、【式】 【式】 【式】及び （但し、ＺはSO2，CO，【式】 【式】Ｏ，またはCH2を示す）からなる群 から選択され、ＸはＯ，SO2またはCOである〕
で表されるくり返し単位を有する重合体である特
許請求の範囲第１項記載の樹脂封止型半導体装
置。 ４ 芳香族ポリエーテルイミド重合体層の厚さが
１〜300μmであることを特徴とする特許請求の範
囲第１項、第２項または第３項記載の樹脂封止型
半導体装置。 ５ 半導体装置がメモリであり、芳香族ポリエー
テルイミド重合体層の厚さが30〜100μmであるこ
とを特徴とする特許請求の範囲第４項記載の樹脂
封止型半導体装置。[Claims] 1. The semiconductor element surface has the general formula () A resin-sealed semiconductor device characterized by being coated with an aromatic polyetherimide polymer having a repeating unit represented by [where Ar and R represent divalent aromatic residues]. 2 The aromatic polyetherimide polymer has the general formula () [However, Ar in the formula is [Formula] [Formula] [Formula] [Formula] [Formula] [Formula] [Formula] [Formula] [Formula] [Formula] [Formula] [Formula] [Formula] [Formula] [Formula] A polymer having a repeating unit represented by SO 2 , CO, [Formula] [Formula] or CH 2 ], wherein X is a group selected from the group consisting of Resin-sealed semiconductor device. 3 The aromatic polyetherimide polymer has the general formula () [However, in the formula, R is metaphenylene, paraphenylene, [formula] [formula] [formula] and (However, Z is selected from the group consisting of SO 2 , CO, O, or CH 2 , and X is O, SO 2 or CO.)
The resin-sealed semiconductor device according to claim 1, which is a polymer having repeating units represented by: 4. The resin-sealed semiconductor device according to claim 1, 2, or 3, wherein the aromatic polyetherimide polymer layer has a thickness of 1 to 300 μm. 5. The resin-sealed semiconductor device according to claim 4, wherein the semiconductor device is a memory, and the aromatic polyetherimide polymer layer has a thickness of 30 to 100 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58204677A JPS6097647A (en) | 1983-11-02 | 1983-11-02 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58204677A JPS6097647A (en) | 1983-11-02 | 1983-11-02 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6097647A JPS6097647A (en) | 1985-05-31 |
| JPH0117262B2 true JPH0117262B2 (en) | 1989-03-29 |
Family
ID=16494465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58204677A Granted JPS6097647A (en) | 1983-11-02 | 1983-11-02 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6097647A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2567375B2 (en) * | 1986-02-13 | 1996-12-25 | 三井東圧化学株式会社 | Colorless polyimide film |
| JP2007106891A (en) * | 2005-10-13 | 2007-04-26 | Kaneka Corp | New polyimide resin |
| JP2007112890A (en) * | 2005-10-20 | 2007-05-10 | Kaneka Corp | New polyimide resin |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5069197A (en) * | 1973-06-22 | 1975-06-09 | ||
| JPS57114257A (en) * | 1981-01-07 | 1982-07-16 | Hitachi Ltd | Semiconductor device |
-
1983
- 1983-11-02 JP JP58204677A patent/JPS6097647A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5069197A (en) * | 1973-06-22 | 1975-06-09 | ||
| JPS57114257A (en) * | 1981-01-07 | 1982-07-16 | Hitachi Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6097647A (en) | 1985-05-31 |
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