JPH01172590A - Method and device for full plating - Google Patents

Method and device for full plating

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Publication number
JPH01172590A
JPH01172590A JP33043187A JP33043187A JPH01172590A JP H01172590 A JPH01172590 A JP H01172590A JP 33043187 A JP33043187 A JP 33043187A JP 33043187 A JP33043187 A JP 33043187A JP H01172590 A JPH01172590 A JP H01172590A
Authority
JP
Japan
Prior art keywords
plated
plating
anode
holding jig
shielding plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP33043187A
Other languages
Japanese (ja)
Other versions
JPH0314911B2 (en
Inventor
Tetsuya Hojo
徹也 北城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP33043187A priority Critical patent/JPH01172590A/en
Publication of JPH01172590A publication Critical patent/JPH01172590A/en
Publication of JPH0314911B2 publication Critical patent/JPH0314911B2/ja
Granted legal-status Critical Current

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Abstract

PURPOSE:To fully plate a material in uniform thickness by providing a shielding plate having an opening for an anode at regular intervals on both sides of a conveyance passage in a plating bath, intermittently conveying the material to be plated between the shielding plates, and stopping the material for specified time when the center of the material reaches the position corresponding to the opening. CONSTITUTION:The electrode in the plating bath 2 is energized, a conveyor means 4 is driven, and short-sized materials 1 to be plated are sent in at regular intervals. The oblong vertical materials 1 are held at regular intervals on an endless cathode contact 7 moving along a holding jig 5 in a conveyance part 6 above the holding jig 5 provided on the periphery of the means 4. The intermittently moving material 1 is stopped by the means 4 for a specified time, when the center of the material 1 reaches the position corresponding to the openings 9 and 9 for an anode. When the material 1 is stopped, a plating film is more thickly formed on the center of the materials 1 corresponding to the anodes 11 and 11 than on the part close to the side edge unlike the case when the material 1 passes between the shielding plates 10 and 10. As a result, a plating film is formed in almost uniform thickness on the center of the material 1 and on the part close to the side edge.

Description

【発明の詳細な説明】 イ 発明の目的 a 産業上の利用分野 本発明は、例えばICリードフレーム・プリント基板の
如き板状物や、あるいは棒状物のような被メッキ物に、
半田・錫−銀・銅その他の全屈を全面メッキするための
方法、およびそのための装置に関するものである。
Detailed Description of the Invention A. Purpose of the Invention a. Industrial Field of Application The present invention is applicable to plate-like objects such as IC lead frames and printed circuit boards, or objects to be plated such as rod-like objects.
The present invention relates to a method for fully plating solder, tin-silver, copper, and other materials, and an apparatus therefor.

b 従来の技術 上記の如き板状物や棒状物等の被メッキ物へ全面メッキ
を施す従来手段としては、う・7キング法が一般的であ
る。これは、例えば「メッキマニアル」 (友野理平著
、株式会社オーム社、昭和46年10月25日発行)の
第57頁乃至第78頁に記載の如く、引掛は周部をもつ
ラック(治具)に、板状や棒状の被メッキ物を陰極部に
接触させながら引掛は吊して、メッキ液中で電解処理す
るものである。また特にICリードフレームへの内装全
面メッキや樹脂モールド後の外装メッキ、あるいはプリ
ント基板へ全面銅メッキ等をする場合には、量産のため
ランク1つに多数枚を引掛けて処理されることが一般的
である。
b. Prior Art As a conventional method for applying full-surface plating to objects to be plated such as plate-like objects and rod-like objects as described above, the 7-king method is generally used. For example, as described on pages 57 to 78 of "Plating Manual" (written by Rihei Tomono, Ohmsha Co., Ltd., published October 25, 1972), the hook is a rack with a peripheral part ( The plate-shaped or rod-shaped object to be plated is suspended from the hook while being in contact with the cathode part, and electrolytically treated in the plating solution. In addition, especially when performing full interior plating on IC lead frames, exterior plating after resin molding, or full copper plating on printed circuit boards, it is often necessary to process a large number of sheets in one rank due to mass production. Common.

C発明が解決しようとする問題点 板状物や棒状物等の被メッキ物への全面メッキを、上記
従来のラッキング法により行った場合には、次の如き問
題点がある。
C. Problems to be Solved by the Invention When the entire surface of an object to be plated, such as a plate-like object or a rod-like object, is plated by the above-mentioned conventional racking method, the following problems arise.

1)メッキにおけるいわゆるエツジ現象により、被メッ
キ物の側部寄りほどメッキが付きやすい。
1) Due to the so-called edge phenomenon in plating, plating tends to stick closer to the side of the object to be plated.

したがって、ランクに引掛けた多、数枚の被メッキ物を
全体的に見た場合、その中で側部寄りに引掛けた被メッ
キ物はどメッキ厚が大きく、中央部寄りに引掛けたもの
ほどメッキ厚が小さくなる。また被メッキ物単体を見た
場合にも、上記全体的な差程ではないが、やはりその側
縁寄り部分はどメッキ厚が大きく、中央部寄りほどメッ
キ厚が小さくなっている。この現象は、陽極との間に遮
蔽板を設けたとしても、その隙間部分においてやはりメ
ッキn=wに差が生じる。このメッキ厚のバラツキは、
特に高精度を要求されるICリードフレームやプリント
基板では側底許容されず、不合格と八ってしまう場合が
多い。
Therefore, if you look at the overall number of objects to be plated that are hooked on the rank, those that are hooked closer to the sides will have a thicker plating, and the ones that are hooked closer to the center will be more likely to be plated. The plating thickness becomes smaller. Furthermore, when looking at a single object to be plated, although it is not the same overall difference as described above, the thickness of the plating is larger near the side edges, and the thickness of the plating becomes smaller closer to the center. Even if a shielding plate is provided between the anode and the anode, this phenomenon still causes a difference in plating n=w in the gap between the shielding plate and the anode. This variation in plating thickness is
In particular, IC lead frames and printed circuit boards that require high precision cannot tolerate the side bottom, and are often rejected.

11)被メッキ物の長さ・幅等によって、ランクの大き
さ・陰極接点の位置・形状等を変える必要があり、専用
のラックまたは接点を用意し、それを交換する手間がか
かった。また被メッキ物であるICリードフレームやプ
リント基板を、ラックに多数枚自動ラフキングすること
は難しい。さらに処理槽の構造から、液交換・撹拌が難
しく低電流密度になっしまい、メッキの高速化が不可能
または困難であった。
11) It was necessary to change the size of the rank, the position and shape of the cathode contact, etc. depending on the length and width of the object to be plated, and it took time and effort to prepare a dedicated rack or contact and replace it. Furthermore, it is difficult to automatically rough-size a large number of IC lead frames and printed circuit boards to be plated onto a rack. Furthermore, the structure of the processing tank makes it difficult to exchange and stir the liquid, resulting in a low current density, making it impossible or difficult to increase the speed of plating.

本発明は、上記従来の全面メッキ手段が持つ問題点を解
決しようとするものである。即ち本発明の目的は、被メ
ッキ物へのメッキ膜厚が均一になるとともに、専用ラッ
クが不要で治具による被メッキ物保持の自動化が可能と
なり、かつ高速メッキ処理を図れるような、全面メッキ
方法および装置を提供することにある。
The present invention aims to solve the problems of the conventional full-surface plating means described above. In other words, the purpose of the present invention is to provide full-surface plating that makes the thickness of the plating film uniform on the object to be plated, eliminates the need for a dedicated rack, enables automation of holding the object with a jig, and enables high-speed plating processing. An object of the present invention is to provide a method and apparatus.

口 発明の構成 a 問題点を解決するだめの手段 まず第1に本発明の全面メッキ方法は、短尺の被メッキ
物(1)を、メッキ[(21内の搬送手段(4)上に設
けた保持治具(5)上側の搬送部分(6)へ等間隔で送
り込み、無端状陰極接点(7)に接触させながら横長垂
直状に保持し、該被メッキ物(1)を、上記保持部分(
6)両側に一定間隔で陽極用開口部(9) (9)を持
つ遮蔽板QO) (10)と、各陽極用開口部f9) 
(9)外側で被メッキ物(1)の両側面に平行状の陽極
0υOI)とが設けられた用送路(8)を通過させ、か
つ該被メッキ物(1)の長手方向中央部が、遮蔽板QO
I QO)の陽極用開口部(9)(9)位置にきたとき
、移動を一定時間停止する間欠搬送させるようにしたも
のである。
Arrangement of the Invention (a) Means for Solving the Problems First of all, the entire surface plating method of the present invention is characterized in that a short object to be plated (1) is plated [(21) provided on a conveying means (4). The holding jig (5) is fed into the upper conveying part (6) at equal intervals and held in a horizontally long vertical shape while contacting the endless cathode contact (7), and the object to be plated (1) is transferred to the holding part (6) on the upper side.
6) Shielding plate QO) (10) with anode openings (9) (9) at regular intervals on both sides and each anode opening f9)
(9) The object to be plated (1) is passed through a feeding path (8) provided with parallel anodes (0υOI) on both sides of the object (1) on the outside, and the central part in the longitudinal direction of the object (1) to be plated is , shielding plate QO
When the anode opening (9) (9) of the IQO) is reached, the movement is stopped for a certain period of time, and the conveyance is carried out intermittently.

また第2に本発明の全面メッキ装置は、メッキ槽(2)
内に、内部を水平状に移動可能な無端状搬送手段(4)
を設け、該搬送手段(4)外周に、被メッキ物(1)を
横長垂直状で保持可能な保持治具(5)を連続状に設け
、陰極接点(7)を無端状として、上記保持治具(5)
上側にある搬送部分(6)内を共に移動可能に設け、搬
送部分(6)両側に、その移動方向に一定間隔で陽極用
開口部(9) (9)をもつ遮蔽板αωQOIと、各陽
極用開口部(9) (9)外側に被メッキ物(1)両側
面へ平行状の陽極αDOυとを設け、かつ上記搬送手段
(4)を、被メッキ物(1)の長手方向中央部が遮蔽板
00)θωの陽極用開口部(9)(9)位置にきたとき
、一定時間停止する間欠運動可能に設けてなるものであ
る。
Secondly, the entire surface plating apparatus of the present invention has a plating tank (2).
Endless conveyance means (4) that can move horizontally inside the interior.
A holding jig (5) capable of holding the object to be plated (1) in a horizontally long and vertical shape is continuously provided on the outer periphery of the conveying means (4), and the cathode contact (7) is endless. Jig (5)
A shielding plate αωQOI is provided movably in the upper conveying part (6) and has anode openings (9) (9) on both sides of the conveying part (6) at regular intervals in the direction of movement, and each anode. opening (9) (9) Parallel anodes αDOυ are provided on both sides of the object to be plated (1) on the outside, and the conveying means (4) is The shielding plate 00) is provided so as to be able to move intermittently and stop for a certain period of time when it reaches the anode opening (9) (9) position of θω.

上記構成をもう少し詳説する。The above configuration will be explained in more detail.

端無状搬送手段(4)は例えばローラチェン式の無端状
のものとし、メッキ槽(2)内の前後に設けた横軸で回
転するホイル(転)により、水平状に移行させて鍛送路
(8)を形成しである。そして該搬送手段(4)は、被
メッキ物(1)の長手方向中央部が遮蔽板001 GO
)の陽極用開口部(9)(9)位置にきたとき、一定時
間停止する間欠運動可能なものとしておく。またその間
欠運動は、被メッキ物(1)全面のメッキ膜厚分布を所
望の状態に調節するため、被メッキ物(1)が遮蔽板Q
O) QO)間を通過する時間と、陽極用開口部(9)
(9)で−時停止する時間とを、適正に調節可能として
おく。
The endless conveying means (4) is, for example, a roller chain-type endless conveyor, and forging is carried out horizontally by wheels (rollers) that rotate on horizontal shafts provided at the front and rear of the plating tank (2). A path (8) is formed. The transport means (4) has a shielding plate 001 GO at the longitudinal center of the object to be plated (1).
) The anode opening (9) is designed to be able to move intermittently, stopping for a certain period of time when it reaches the (9) position. In addition, the intermittent movement adjusts the plating film thickness distribution over the entire surface of the object to be plated (1) to a desired state, so that the object to be plated (1)
O) QO) and the opening for the anode (9)
In (9), the time to stop at - can be appropriately adjusted.

被メッキ物(1)の保持治具(5)は、被メッキ物(1
1を横長垂直状に保持可能な枠型状で、上記搬送手段(
4)外周に連続状に設けである。
The holding jig (5) for the object to be plated (1) holds the object to be plated (1).
The conveying means (
4) Continuously provided on the outer periphery.

無端状陰極接点(7)は、例えばチェン式の無端状とし
、上記保持治具(5)上側の搬送部分(6)内を共に移
動可能としておく。
The endless cathode contact (7) is, for example, chain-type endless, and is movable together within the transport portion (6) above the holding jig (5).

遮蔽板QO) QO)は上記の如く、搬送路(8)を間
にして両側に並設しであるが、該両側遮蔽板00OIに
は緊送方向即ち搬送路(8)に沿って一定間隔に、陽極
用開口部(9) (9)を形成しである。該開口部(9
)(9)の一定間隔は、少なくとも被メッキ物(1)の
横幅より大きいものにしておけばよい。
As mentioned above, the shielding plates QO) QO) are arranged in parallel on both sides with the conveyance path (8) in between, and the shielding plates 00OI on both sides are provided with constant intervals along the conveyance direction, that is, the conveyance path (8). Anode openings (9) (9) are formed therein. The opening (9
) (9) may be set to be larger than at least the width of the object to be plated (1).

陽極aυQl)は、上記遮蔽板0〔aωの各両開口部(
9) (9)外側に、被メッキ物(1)の両側面と平行
状に設けであるが、例えば図示例の如くチップ状にして
チタン裂のアノードケース内に収容したもの、あるいは
板状としてもよい。
The anode aυQl) is connected to each opening (
(9) It is provided on the outside parallel to both side surfaces of the object to be plated (1), for example, as shown in the figure, it may be made into a chip and housed in a titanium-split anode case, or it may be made into a plate. Good too.

なお、また被メッキ物(11の種類によっては、メッキ
膜厚がそれほど均一性を要求されぬものもあるので、そ
の場合のために搬送手段(4)は、連続移動も可能にし
ておけばよい。
Furthermore, depending on the type of the object to be plated (11), the plating film thickness may not be required to be so uniform, so the conveying means (4) may be capable of continuous movement for that case. .

図において、(3)は接点剥離槽であり、例えば第1図
・第3図で示す如くメッキ槽(2)の下部に配置し、か
つ該剥離槽(3)内には、電解剥離液としてメッキ液ま
たは光沢剤等を除いたメッキ液の一部の成分を利用した
剥離液を入れておくのがよい。
In the figure, (3) is a contact stripping tank, which is placed at the bottom of the plating tank (2) as shown in Figures 1 and 3, and inside the stripping tank (3), an electrolytic stripping solution It is preferable to include a plating solution or a stripping solution that uses some components of the plating solution excluding brighteners and the like.

また上記無端状陰極接点(7)は、メッキ槽(2)の前
寄り位置で搬送手段(4)と保持治具(5)がリターン
時に、第1図で示す如く、該陰極接点(7)だけさらに
前方へ進めて保持治具(5)から分離させ、前壁0濁か
らメッキ槽(2)外へ導びき、かつロール07)を介し
て剥離槽(3)の液中を通過させ、その後に後壁αaか
ら再びメッキ槽(2)内へ戻る如く、循環移動可能にし
ておくことが望ましい。
Further, when the conveying means (4) and the holding jig (5) are returned to the front position of the plating tank (2), the endless cathode contact (7) is inserted into the cathode contact (7) as shown in FIG. further forward to separate it from the holding jig (5), lead it out of the plating tank (2) through the front wall, and pass it through the liquid in the stripping tank (3) via rolls 07). After that, it is desirable to be able to circulate it so that it returns to the plating tank (2) from the rear wall αa.

αつaつは液切り板、Q6) asは遮蔽板間における
メッキ液撹拌用の循環パイプである。
α is a liquid draining plate, and Q6) as is a circulation pipe for stirring the plating solution between the shielding plates.

b  作      用 本発明の作動状態は次の如くである。b for work The operating state of the present invention is as follows.

メッキ液を入れたメッキ槽(2)内の電極に通電すると
ともに、間欠運動可能な搬送手段(4)を駆動させてお
き、短尺の被メッキ物(1)を等間隔で順次に送り込む
。被メッキ物(1)は、搬送手段(4)外周に設けた保
持治具(5)の上側にある搬送部分(6)内で、該保持
治具(5)とともに移動する無端状の陰極接点(7)上
に、横長垂直状で等間隔に保持される。
Electrodes in a plating bath (2) containing a plating solution are energized, and a conveying means (4) capable of intermittent movement is driven to sequentially feed short objects to be plated (1) at equal intervals. The object to be plated (1) is an endless cathode contact that moves together with the holding jig (5) within the conveyance section (6) above the holding jig (5) provided on the outer periphery of the conveyance means (4). (7) They are held horizontally and vertically at equal intervals on the top.

搬送手段(4)の移動により、保持治具(5)上側の搬
送部分(6)内の被メッキ物(1)はメッキ槽(2)の
後部から前部に向けて水平状の搬送路(8)上を搬送さ
れるが、その際無端状陰極接点(7)も、上記の如く被
メッキ物(1)に接触しながら保持治具(5)と共に移
動している。
By moving the conveying means (4), the object to be plated (1) in the conveying part (6) on the upper side of the holding jig (5) is moved along a horizontal conveying path ( 8) The endless cathode contact (7) is also moved together with the holding jig (5) while coming into contact with the object to be plated (1) as described above.

被メッキ物(1)が移動する搬送路(8)両側には、−
定間隔で陽極用開口部(9) (9)をもつ遮蔽板GO
) (10)と、各陽極用開口部f9) (9)外側に
平行状に陽極aυ0υが設けである。被メッキ物(1)
には、該搬送路(81kを移動中にメッキ膜が形成され
るが、遮蔽板θl00)間を通過時にはエツジ現象によ
り、被メッキ物(1)の側縁寄り部分はどメッキが析出
し易いので、その部分のメッキ膜が厚くなりがちである
There are -
Shielding plate GO with anode openings (9) (9) at regular intervals
) (10) and each anode opening f9) (9) Anodes aυ0υ are provided in parallel on the outside. Item to be plated (1)
A plating film is formed while moving through the conveyance path (81k), but when passing between the shielding plates θl00, edge plating tends to precipitate on the side edges of the object (1) due to the edge phenomenon. Therefore, the plating film in that area tends to be thick.

しかし本発明では搬送手段(4)が、搬送されてきた被
メッキ物(1)の中央部が上記陽極用開口部(9)(9
)に対応する位置に来た時点で、間欠移動で一定時間停
止するようにしである。そのため該停止時中には、上記
遮蔽板0100間を通過時とは逆に、陽極αυαυと対
応する位置の被メッキ物(1)中央部で、側縁寄り部分
よりもメッキが析出し易く、メッキ膜が厚く形成される
However, in the present invention, the conveying means (4) is arranged so that the central part of the object to be plated (1) that has been conveyed is connected to the anode opening (9) (9).
), the robot will move intermittently and stop for a certain period of time. Therefore, during the stoppage, plating is more likely to precipitate at the center of the object to be plated (1) at the position corresponding to the anode αυαυ than at the side edges, contrary to when it passes between the shielding plates 0100. A thick plating film is formed.

それゆえ、被メッキ物(1)が上記の如くメッキ槽(2
)内を移動中に、何箇所かの陽極用開口部(9) f9
)を一定時間停止しながら通過することにより、被メッ
キ物+1)中央部にはメッキ膜形成が充分に繰り返され
る。その結果、該被メッキ物(1)がメッキ槽(2)内
を移動し終わる段階では、被メッキ物(1)上のメッキ
膜は、中央部も側縁寄り部分もほぼ均一な、膜厚に形成
されることになる。
Therefore, the object to be plated (1) is in the plating tank (2) as described above.
) while moving through the anode openings (9) f9
) while stopping for a certain period of time, the formation of a plating film is sufficiently repeated on the central part of the object to be plated +1). As a result, at the stage when the object to be plated (1) has finished moving in the plating tank (2), the plating film on the object to be plated (1) has a substantially uniform thickness both in the center and near the side edges. will be formed.

さらに本発明では陽極0υ0υを、撤送路(8)両側の
陽極用開口部(9) (9)外側に、保持治具(5)内
の被メッキ物(1)両側面と平行状に設けである。その
ため陽極000υと陰極接点(7)との極間距離が短い
場合にも、被メッキ物(1)と陽極αυ0υとの最短距
離は、被メッキ物(1)の各部の高さにおいて近似する
。そのため被メッキ物(1)の高さ方向のメッキ膜厚も
、均一化し易(なっている。
Furthermore, in the present invention, anodes 0υ0υ are provided outside the anode openings (9) (9) on both sides of the withdrawal path (8) in parallel with both side surfaces of the object to be plated (1) in the holding jig (5). It is. Therefore, even when the distance between the anode 000υ and the cathode contact (7) is short, the shortest distance between the object to be plated (1) and the anode αυ0υ is approximated by the height of each part of the object to be plated (1). Therefore, the thickness of the plating film in the height direction of the object to be plated (1) can also be easily made uniform.

なお、無端状陰極接点(7)および接点剥離N(3)を
、上記の如く第1図・第3図で示すような構成にしであ
る場合には、上記作動状態中に陰極接点(7)は、メッ
キ槽(2)前部寄りで搬送手段(4)がリターン時に搬
送手段(4)や保持治具(5)から分離し、メッキ槽(
2)外に出て接点剥離[f31内を通過し、メッキ槽(
2)へ戻るという循環移動をする。この接点剥離yM(
31内の通過により、陰極接点(7)に電着のメッキは
、該剥離[(3)内の電解剥離液にて剥離される。
In addition, when the endless cathode contact (7) and the contact peeling N (3) are configured as shown in FIGS. 1 and 3 as described above, the cathode contact (7) The transport means (4) near the front of the plating tank (2) separates from the transport means (4) and the holding jig (5) when returning, and the plating tank (
2) Go outside and peel off the contact [pass through f31, plating tank (
Make a circular movement by returning to 2). This contact peeling yM(
31, the electrodeposited plating on the cathode contact (7) is removed by the electrolytic stripping solution in (3).

その際、剥離槽(3)内を通過するのは単に陰極接点(
7)だけで、搬送手段(4)や保持治具(5)はメッキ
槽(2)内だけの移動であるから、メッキ液の持ち出し
・持ち込み量はきわめて少なくな、ている。また該剥離
槽(3)内の剥離液は、メソき液またはメッキ液を成分
とする電解剥離液としである。そのためメッキ液が、陰
極接点(7)により該剥離M! (31へ持ち込まれた
としも、メッキ液と同質の電解剥離液は変質しないし、
逆に剥離液のメッキM(2)への持ち込みも何ら問題と
ならない。また陰極接点(7)を電解剥離後に水洗する
必要もなくなっている。
At that time, what passes through the stripping tank (3) is simply the cathode contact (
7), and the conveying means (4) and holding jig (5) are moved only within the plating tank (2), so the amount of plating solution taken out and brought in is extremely small. Further, the stripping solution in the stripping tank (3) is an electrolytic stripping solution containing a meso-plating solution or a plating solution as a component. Therefore, the plating solution is applied to the peeling M! by the cathode contact (7). (Even if it is brought to 31, the electrolytic stripping solution, which is the same as the plating solution, will not change in quality,
On the other hand, there is no problem if the stripping solution is brought into the plating M(2). Furthermore, it is no longer necessary to wash the cathode contact (7) with water after electrolytic stripping.

C実   施   例 本発明の効果を確認するため、実施例としての第1図な
いし第5図で示す全面メッキ装置を用いて、次の条件で
実験を行った。メッキ液9:1半田スロツトレフトKB
浴(西独マックスシュレータ−社製)、電流密度5A 
/ dm2.浴温20C1設定膜厚値7μm、極間距離
40〜50mm、被メッキ物ICリードフレーム(Di
p28ピン220×45mm、F1at84ピン188
X55mm)、遮蔽板長さ600mm、時間3.5分(
内容停止時間35秒、各移動時間52.5秒)とし、膜
厚測定機蛍光X線膜厚測定機(セイコー社製5FT−1
58型)で被メッキ物(1)各部の膜厚を測定した。そ
れを、従来のラッキング法により同じ条件でメ・ツキし
たものと比較すると以下の表のようになる。
C. Example In order to confirm the effects of the present invention, experiments were conducted under the following conditions using the full surface plating apparatus shown in FIGS. 1 to 5 as an example. Plating solution 9:1 solder slot left KB
Bath (manufactured by Max Schroeter, West Germany), current density 5A
/dm2. Bath temperature 20C, set film thickness value 7 μm, distance between electrodes 40 to 50 mm, IC lead frame to be plated (Di
p28 pin 220 x 45mm, F1at84 pin 188
x55mm), shielding plate length 600mm, time 3.5 minutes (
(Stop time: 35 seconds, each movement time: 52.5 seconds), film thickness measuring machine: Fluorescent X-ray film thickness measuring machine (Seiko 5FT-1)
The film thickness of each part of the object to be plated (1) was measured using a model 58. The table below compares this with that of the conventional racking method under the same conditions.

上表で明らかな如く、本発明により全面メ・ツキした場
合には、最大膜厚と最小FAPf−との差が従来のラッ
キング法によるものと比べて、きわめて小さくなること
分かる。
As is clear from the table above, when the entire surface is plated according to the present invention, the difference between the maximum film thickness and the minimum FAPf- becomes extremely small compared to when the conventional racking method is used.

ハ 発明の効果 以上で明らかな如く、本発明の全面メ・ツキ方法および
装置は、次の如き効果を奏する。
C. Effects of the Invention As is clear from the above, the entire surface plating method and apparatus of the present invention has the following effects.

a 被メッキ物のメッキ膜厚を均一にできる。a. The thickness of the plating film on the object to be plated can be made uniform.

即ち、従来行われていたラッキング法では、エツジ現象
により、被メ・ツキ物の側縁寄りほどメッキが析出し易
<、膜厚が中央部よりも厚くムリ、このメッキ厚のバラ
ツキは、特に高精度を要求されるICリードフレームや
プリント基板では許容されず、不合格となる場合が多か
った。しかし本発明では、上記の如くメッキ槽内の散送
路両側に、等間隔で陽極用開口部を持つ遮蔽板を設け、
その間を被メッキ物の中央部が開口部に対応する位置に
きた際に、一定時間停止するよう間欠搬送させである。
In other words, in the conventional racking method, due to the edge phenomenon, plating tends to precipitate closer to the side edges of the object to be plated. This was not acceptable for IC lead frames and printed circuit boards that required high precision, and the test was often rejected. However, in the present invention, as described above, shielding plates having anode openings are provided at equal intervals on both sides of the dispersion path in the plating tank,
The object to be plated is transported intermittently between the two, stopping for a certain period of time when the center of the object comes to a position corresponding to the opening.

それゆえ、被メッキ物の中央部にもメッキが析出し易く
、側縁部寄りと同様なメッキ膜厚となる。さらに本発明
では陽極を、黴送路両側の陽極用開口部外側に、保持治
具内の被メッキ物両側面と平行状に設けであるので、陽
極と陰極との極間距離が短い場合にも、被メッキ物と陽
極との最短距離は、被メッキ物・の高さの各位置で近似
する。それゆえ、被メッキ物・の高さ方向の各位置で、
メッキ11が均一化し易くなっている。したがって本発
明では、被メッキ物の全面にわたって、はぼ均一なメッ
キ膜厚を形成できるものである。
Therefore, plating is likely to precipitate also in the center of the object to be plated, resulting in a plating film thickness similar to that near the side edges. Furthermore, in the present invention, the anodes are provided outside the anode openings on both sides of the mold feeding path, parallel to both sides of the object to be plated in the holding jig, so that when the distance between the anode and the cathode is short, Also, the shortest distance between the object to be plated and the anode is approximated at each height of the object to be plated. Therefore, at each position in the height direction of the object to be plated,
The plating 11 can be easily made uniform. Therefore, in the present invention, it is possible to form a plating film with a substantially uniform thickness over the entire surface of the object to be plated.

b 被メッキ物の長さ・幅その他の形状によって、ラン
クの大きさ・陰極接点の位置・形状等を変えなくてもよ
いし、また高速メッキ処理ができる。
b. It is not necessary to change the size of the rank, the position and shape of the cathode contact, etc. depending on the length, width, and other shapes of the object to be plated, and high-speed plating processing can be performed.

即ち、従来のラッキング法では、被メッキ物の長さ・幅
等に応じた専用のランクおよび接点を用息し、かつ被メ
ッキ物に応じてそれを交換する手間がかかり、作業性が
よくなかった。メッキ槽の構造上から、液の高速撹拌が
難しく低電流密度になっていた。
In other words, the conventional racking method requires special ranks and contacts depending on the length and width of the object to be plated, and it takes time and effort to replace them depending on the object to be plated, resulting in poor workability. Ta. Due to the structure of the plating tank, it was difficult to stir the liquid at high speed, resulting in a low current density.

これに対して本発明では、間欠移動している保持治具へ
は、被メッキ物を投入して自動的に係合・保持可能で、
被メッキ物の長さ・幅等に関係なく行える。またメッキ
槽内を、被メッキ物の長手方向くIM送方向)に平行状
に、全体的に撹拌できるので、高速撹拌・高電流密度が
可能となり、メッキの高速化を図ることができる。
In contrast, in the present invention, the object to be plated can be thrown into the holding jig that is intermittently moving and automatically engaged and held.
This can be done regardless of the length, width, etc. of the object to be plated. Furthermore, since the inside of the plating tank can be stirred as a whole parallel to the longitudinal direction of the object to be plated (IM feeding direction), high-speed stirring and high current density are possible, and high-speed plating can be achieved.

Cなお図示例のメッキ装置のように、無端状陰極接点の
みをメッキ槽の後部から出し、メッキ液またはメッキ液
を成分とする電解剥離液中を通過する如く循環移動させ
た場合には、メッキ槽と接点・治具剥離槽との間の移動
時に、メッキ液の持ち出し持ち込みをきわめて少なくで
きる。
C. In addition, as in the plating apparatus shown in the figure, when only the endless cathode contact is taken out from the rear of the plating tank and circulated through the plating solution or an electrolytic stripping solution containing the plating solution as a component, the plating When moving between the tank and the contact/jig stripping tank, the amount of plating solution carried out can be extremely reduced.

即ち、従来のラフキング法では、処理液が被メッキ物と
ラックの両方に付着して移動する。そのため、隣接の処
理槽との間で処理液の汲み出し・持ち込みが多く、非経
済的であるとともにメッキの品質を悪くし、かつ処理時
間も長くしている。
That is, in the conventional rough king method, the processing liquid adheres to both the object to be plated and the rack and moves. As a result, the processing liquid is frequently pumped out and brought in between adjacent processing tanks, which is uneconomical, deteriorates the quality of plating, and lengthens the processing time.

それに対して図示例のメッキ装置では、メッキ槽から次
槽への移動は単に陰極接点だけであり、搬送手段や治具
はメッキ槽内だけでの循環移動である。そのためメッキ
液の持ち出し・持ち込みの量はきわめて少ない。また陰
極接点によるメッキ液の持ち出し・持ち込みも、接点剥
離槽内の剥離液を、メッキ液またはメッキ液を成分とす
る電解剥離液としであると、陰極接点によりメッキ液が
持ち込まれても、メッキ液と電解剥離液とが同質のため
変質がない。したがって陰極接点を電解剥離後に水洗す
る必要がないし、経済的であるとともに、メッキの品質
が良くなり、かつ処理時間も短縮できることになる。
In contrast, in the illustrated plating apparatus, only the cathode contact is moved from one plating tank to the next, and the conveyance means and jigs are circulated only within the plating tank. Therefore, the amount of plating solution taken out and brought in is extremely small. In addition, if the stripping solution in the contact stripping tank is a plating solution or an electrolytic stripping solution containing plating solution as a component, even if the plating solution is brought in by the cathode contact, the plating solution will not be removed. There is no deterioration because the liquid and electrolytic stripper are of the same quality. Therefore, there is no need to wash the cathode contact with water after electrolytic stripping, which is economical, improves the quality of plating, and shortens processing time.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の実施例を示すもので、第1図はメッキ装置
の要部の縦断正面図、第2図は遮蔽板と陽極用開口部と
陽極との位置関係を示す一部の斜視図、第3図は第1図
のlll−l11断面図、第4図は被メ・ツキ物が移動
時の遮蔽板との位置関係を示す概略平面図、第5図は被
メッキ物が一旦停止時の陽極用開口部との位置関係を示
す概略平面図である。 図面符号 (1)−被メッキ物  (2)−メッキ槽(4)−黴送
手段   (5)−保持治具(6)−搬送部分   (
7)−陰極接点(8)−用送路    (9)−開口部
00)−遮蔽板    QD−陽極
The figures show an embodiment of the present invention; FIG. 1 is a longitudinal sectional front view of the main parts of the plating apparatus, and FIG. 2 is a partial perspective view showing the positional relationship between the shielding plate, the anode opening, and the anode. , Fig. 3 is a sectional view taken along line lll-l11 in Fig. 1, Fig. 4 is a schematic plan view showing the positional relationship with the shield plate when the object to be plated is moving, and Fig. 5 is a schematic plan view when the object to be plated is temporarily stopped. FIG. 3 is a schematic plan view showing the positional relationship with the anode opening at the time. Drawing code (1) - Item to be plated (2) - Plating tank (4) - Mold conveying means (5) - Holding jig (6) - Conveying part (
7) - Cathode contact (8) - Feed path (9) - Opening 00) - Shielding plate QD - Anode

Claims (1)

【特許請求の範囲】 [1]短尺の被メッキ物(1)を、メッキ槽(2)内の
搬送手段(4)上に設けた保持治具(5)上側の搬送部
分(6)へ等間隔で送り込み、無端状陰極接点(7)に
接触させながら横長垂直状に保持し、該被メッキ物(1
)を、上記保持部分(6)両側に一定間隔で陽極用開口
部(9)(9)を持つ遮蔽板(10)(10)と、各陽
極用開口部(9)(9)外側で被メッキ物(1)の両側
面に平行状の陽極(11)(11)とが設けられた搬送
路(8)を通過させ、かつ該被メッキ物(1)の長手方
向中央部が、遮蔽板(10)(10)の陽極用開口部(
9)(9)位置にきたとき、移動を一定時間停止する間
欠搬送させるようにしたことを特徴とする、全面メッキ
方法。 [2]メッキ槽(2)内に、内部を水平状に移動可能な
無端状搬送手段(4)を設け、該搬送手段(4)外周に
、被メッキ物(1)を横長垂直状で保持可能な保持治具
(5)を連続状に設け、陰極接点(7)を無端状として
、上記保持治具(5)上側にある搬送部分(6)内を共
に移動可能に設け、搬送部分(6)両側に、その移動方
向に一定間隔で陽極用開口部(9)(9)をもつ遮蔽板
(10)(10)と、各陽極用開口部(9)(9)外側
に被メッキ物(1)両側面へ平行状の陽極(11)(1
1)とを設け、かつ上記搬送手段(4)を、被メッキ物
(1)の長手方向中央部が遮蔽板(10)(10)の陽
極用開口部(9)(9)位置にきたとき、一定時間停止
する間欠運動可能に設けたことを特徴とする、全面メッ
キ装置。
[Scope of Claims] [1] A short object to be plated (1) is transferred to the upper transport portion (6) of the holding jig (5) provided on the transport means (4) in the plating tank (2), etc. The object to be plated (1
), a shielding plate (10) (10) having anode openings (9) (9) at regular intervals on both sides of the holding part (6), and a shielding plate (10) (10) having anode openings (9) (9) covered on the outside of each anode opening (9) (9). The object to be plated (1) is passed through a conveyance path (8) in which parallel anodes (11) (11) are provided on both sides, and the central part in the longitudinal direction of the object to be plated (1) is connected to a shielding plate. (10) (10) Anode opening (
9) A full surface plating method characterized by intermittent conveyance in which movement is stopped for a certain period of time when the position (9) is reached. [2] In the plating tank (2), an endless conveying means (4) that can move horizontally inside is provided, and the object to be plated (1) is held in a horizontally long vertical shape on the outer periphery of the conveying means (4). The holding jig (5) is provided in a continuous manner, the cathode contact (7) is endless, and the holding jig (5) is provided so as to be movable together in the conveying part (6) above the holding jig (5). 6) A shielding plate (10) (10) having anode openings (9) (9) on both sides at regular intervals in the direction of movement, and an object to be plated on the outside of each anode opening (9) (9). (1) Parallel anodes on both sides (11) (1
1), and when the longitudinal center of the object to be plated (1) is at the anode opening (9) (9) position of the shielding plate (10) (10), the conveying means (4) is moved. A full-surface plating device characterized by being capable of intermittent motion that stops for a certain period of time.
JP33043187A 1987-12-25 1987-12-25 Method and device for full plating Granted JPH01172590A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33043187A JPH01172590A (en) 1987-12-25 1987-12-25 Method and device for full plating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33043187A JPH01172590A (en) 1987-12-25 1987-12-25 Method and device for full plating

Publications (2)

Publication Number Publication Date
JPH01172590A true JPH01172590A (en) 1989-07-07
JPH0314911B2 JPH0314911B2 (en) 1991-02-27

Family

ID=18232539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33043187A Granted JPH01172590A (en) 1987-12-25 1987-12-25 Method and device for full plating

Country Status (1)

Country Link
JP (1) JPH01172590A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06146100A (en) * 1992-11-11 1994-05-27 Sumitomo Metal Mining Co Ltd Partial plating peeling device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06146100A (en) * 1992-11-11 1994-05-27 Sumitomo Metal Mining Co Ltd Partial plating peeling device

Also Published As

Publication number Publication date
JPH0314911B2 (en) 1991-02-27

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