JPH01171337U - - Google Patents
Info
- Publication number
- JPH01171337U JPH01171337U JP6760688U JP6760688U JPH01171337U JP H01171337 U JPH01171337 U JP H01171337U JP 6760688 U JP6760688 U JP 6760688U JP 6760688 U JP6760688 U JP 6760688U JP H01171337 U JPH01171337 U JP H01171337U
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- diaphragm
- silicon diaphragm
- pressure
- strain gauge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 7
- 239000012530 fluid Substances 0.000 claims description 5
- 125000006850 spacer group Chemical group 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000009429 electrical wiring Methods 0.000 description 1
Description
第１図は本考案の一実施例の要部構成説明図、
第２図は第１図の動作説明図、第３図〜第６図は
従来より一般に使用されている従来例の構成説明
図で、第３図はトランスジユーサを圧力計として
構成した斜視図、第４図は第３図におけるＡ部の
拡大平面図に電気配線を施した図、第５図は第４
図のＡ―Ａ断面図、第６図は第４図を電気回路で
示した図である。
１０…基板、１１…ダイアフラム、１１１…シ
リコンのダイアフラムの固定部、１１２…流体、
１１３…凹部、１１４…室、１２…振動子形歪み
ゲージ、１３…磁石、１３１…ヨーク、１３２…
永久磁石、３０…振動抑制体、４０…シリコンの
基板、４１…導圧孔、４２…スペーサー、５０…
導圧接手、５１…連通孔。
FIG. 1 is an explanatory diagram of the main part configuration of an embodiment of the present invention,
Fig. 2 is an explanatory diagram of the operation of Fig. 1, Figs. 3 to 6 are explanatory diagrams of the configuration of a conventional example commonly used, and Fig. 3 is a perspective view of the transducer configured as a pressure gauge. , Fig. 4 is an enlarged plan view of section A in Fig. 3 with electrical wiring, and Fig. 5 is an enlarged plan view of section A in Fig. 3.
FIG. 6 is a sectional view taken along the line AA in the figure, and is a diagram showing FIG. 4 as an electric circuit. DESCRIPTION OF SYMBOLS 10... Substrate, 11... Diaphragm, 111... Silicon diaphragm fixing part, 112... Fluid,
113... Recessed portion, 114... Chamber, 12... Vibrator type strain gauge, 13... Magnet, 131... Yoke, 132...
Permanent magnet, 30... Vibration suppressor, 40... Silicon substrate, 41... Pressure conducting hole, 42... Spacer, 50...
Pressure conduction joint, 51...communication hole.
Claims (1)
形歪みゲージを具備する振動形差圧センサにおい
て、 所定の流体中に配置された前記シリコンダイア
フラムと該シリコンダイアフラムの固定部と、該
ダイアフラムとの間の前記流体の密度と粘度によ
り前記シリコンダイアフラムと該シリコンダイア
フラムの固定部とが前記振動子形歪みゲージと共
振しないように該ダイアフラムの少なくとも一面
に一面が近接して設けられた振動抑制体とを具備
したことを特徴とする振動形差圧センサ。 (2) シリコンダイアフラムに設けられた振動子
形歪みゲージを具備する振動形差圧センサにおい
て、 所定の流体中に配置された前記シリコンダイア
フラムと該シリコンダイアフラムの固定部と、該
シリコンダイアフラムと該シリコンダイアフラム
の固定部とで構成される凹部と、前記シリコンダ
イアフラムの固定部の一面に一面が固定され前記
凹部と室を構成するシリコン基板と、該シリコン
基板に設けられ前記室に圧力を導入する導圧孔と
、前記シリコン基板との間の前記流体の密度と粘
度により前記シリコンダイアフラムの固定部が前
記振動子形歪みゲージと共振しないように該導圧
孔の外部開口部に設けられたスペーサーを介して
前記シリコン基板に一面が近接して固定された導
圧接手と、該導圧接手に設けられ前記シリコン基
板の導圧孔に連通する連通孔とを具備したことを
特徴とする振動形差圧センサ。[Claims for Utility Model Registration] (1) A vibrating differential pressure sensor equipped with a vibrator type strain gauge provided on a silicon diaphragm, the silicon diaphragm disposed in a predetermined fluid and a fixing part of the silicon diaphragm. and one surface of the silicon diaphragm is provided in close proximity to at least one surface of the diaphragm so that the silicon diaphragm and the fixed portion of the silicon diaphragm do not resonate with the vibrator type strain gauge due to the density and viscosity of the fluid between the silicon diaphragm and the diaphragm. A vibrating differential pressure sensor comprising: a vibration suppressing body; (2) A vibrating differential pressure sensor equipped with a vibrator-type strain gauge provided on a silicon diaphragm, the silicon diaphragm and a fixing portion of the silicon diaphragm disposed in a predetermined fluid, and the silicon diaphragm and the silicon a recess formed by a fixed portion of the diaphragm; a silicon substrate having one surface fixed to one surface of the fixed portion of the silicon diaphragm and forming a chamber with the recess; and a conductor provided on the silicon substrate for introducing pressure into the chamber. A spacer is provided at the external opening of the pressure hole so that the fixed portion of the silicon diaphragm does not resonate with the vibrator type strain gauge due to the density and viscosity of the fluid between the pressure hole and the silicon substrate. A vibrating shape difference characterized by comprising: a pressure-conducting joint whose one side is fixed close to the silicon substrate via a pressure-conducting joint; and a communication hole provided in the pressure-conductive joint and communicating with the pressure-conducting hole of the silicon substrate. pressure sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6760688U JPH0628662Y2 (en) | 1988-05-23 | 1988-05-23 | Vibration type differential pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6760688U JPH0628662Y2 (en) | 1988-05-23 | 1988-05-23 | Vibration type differential pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01171337U true JPH01171337U (en) | 1989-12-05 |
| JPH0628662Y2 JPH0628662Y2 (en) | 1994-08-03 |
Family
ID=31292973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6760688U Expired - Lifetime JPH0628662Y2 (en) | 1988-05-23 | 1988-05-23 | Vibration type differential pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0628662Y2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2568269A2 (en) | 2011-08-25 | 2013-03-13 | Yokogawa Electric Corporation | Resonant pressure sensor and method of manufacturing the same |
| CN104422547A (en) * | 2013-08-19 | 2015-03-18 | 横河电机株式会社 | Resonant pressure sensor and manufacturing method therefor |
-
1988
- 1988-05-23 JP JP6760688U patent/JPH0628662Y2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2568269A2 (en) | 2011-08-25 | 2013-03-13 | Yokogawa Electric Corporation | Resonant pressure sensor and method of manufacturing the same |
| US9003889B2 (en) | 2011-08-25 | 2015-04-14 | Yokogawa Electric Corporation | Resonant pressure sensor and method of manufacturing the same |
| CN104422547A (en) * | 2013-08-19 | 2015-03-18 | 横河电机株式会社 | Resonant pressure sensor and manufacturing method therefor |
| EP2840373A3 (en) * | 2013-08-19 | 2015-04-08 | Yokogawa Electric Corporation | Resonant pressure sensor and manufacturing method therefor |
| US11243131B2 (en) | 2013-08-19 | 2022-02-08 | Yokogawa Electric Corporation | Resonant pressure sensor and manufacturing method therefor |
| US11835413B2 (en) | 2013-08-19 | 2023-12-05 | Yokogawa Electric Corporation | Resonant pressure sensor and manufacturing method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0628662Y2 (en) | 1994-08-03 |
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