JPH01169751A - Phase transition recording medium - Google Patents
Phase transition recording mediumInfo
- Publication number
- JPH01169751A JPH01169751A JP62326238A JP32623887A JPH01169751A JP H01169751 A JPH01169751 A JP H01169751A JP 62326238 A JP62326238 A JP 62326238A JP 32623887 A JP32623887 A JP 32623887A JP H01169751 A JPH01169751 A JP H01169751A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- recording medium
- layer
- recording layer
- phase transition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007704 transition Effects 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 3
- 229910052804 chromium Inorganic materials 0.000 claims abstract 2
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract 2
- 229910052697 platinum Inorganic materials 0.000 claims abstract 2
- 229910052715 tantalum Inorganic materials 0.000 claims abstract 2
- 229910052720 vanadium Inorganic materials 0.000 claims abstract 2
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract description 2
- 229910000838 Al alloy Inorganic materials 0.000 abstract 1
- 229910016877 AlxM1-x Inorganic materials 0.000 abstract 1
- 229910005900 GeTe Inorganic materials 0.000 abstract 1
- 229910003069 TeO2 Inorganic materials 0.000 abstract 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 241000283986 Lepus Species 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は相変化記録媒体に関する。詳しくは記録層とし
て相変化形の記録層を用いた光記録媒体に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a phase change recording medium. Specifically, the present invention relates to an optical recording medium using a phase change type recording layer as a recording layer.
（従来の技術とその課題）
相変化記録媒体はレーザービームによる加熱−アモルフ
ァス）効果を用いて情報を記録し、各結晶相の光反射率
の違いから情報を読み出すことができる。(Prior art and its problems) Phase change recording media record information using a heating effect by a laser beam (amorphous), and can read information from the difference in light reflectance of each crystalline phase.
相変化記録媒体には書き込み可能型（ライトワンス型）
と書き換え可能型（イレーザブル型）の両方があり、近
年進歩の著しい記録媒体である。Phase change recording media are writable (write-once type)
There are both rewritable and erasable types, and it is a recording medium that has made significant progress in recent years.
相変化記録媒体のキャリアレベル（ＣＬ）は記録状態と
消去状態の光反射率のコントラストが違うほど大きくな
る。コントラストを上げる為に記録層を薄くシ、その下
に反射層を設は光のｊ−２１
／ ２ ） ＝、ん
干渉効果を強く出すには反射層の光反射率を高くする必
要があるが、反射率の高い物質（例えば、Ａｔ＋ ＋
Ａｇ＋ Ｃｕ ｔ Ａ １等）を用いると、−般に熱伝
導度が大きく感度の低下をもたらす。The carrier level (CL) of a phase change recording medium increases as the contrast between the light reflectance in the recorded state and the erased state differs. In order to increase the contrast, the recording layer is made thinner, and a reflective layer is placed below it.In order to produce a strong interference effect, it is necessary to increase the light reflectance of the reflective layer. , materials with high reflectance (e.g., At++
When Ag+ Cut A 1, etc.) is used, the thermal conductivity is generally large, resulting in a decrease in sensitivity.
（課題を解決する為の手段）
本発明者等は上述の欠点を克服した高コントラスト、高
感度の相変化記録媒体を提供することを目的に鋭意検討
した結果、本発明に到達したものである。(Means for Solving the Problems) The present inventors have arrived at the present invention as a result of intensive studies aimed at providing a phase change recording medium with high contrast and high sensitivity that overcomes the above-mentioned drawbacks. .
すなわち本発明の要旨は、基板上に設けられ媒体におい
て、記録層に反射層を設けてなシ、該反射層をＡ Ｉｘ
Ｍ＋−ｘ （Ｍ Ｆ！、Ｔａ ＋ Ｔｔ ＋ Ｚｒ ＋
Ｖ ｒＰ ｔ ＋ Ｍｏ ＊ Ｃｒから選ばれる少な
くとも１種の元素、Ｘは０．θ／〜０．７！の数）によ
って形成したことを特徴とする相変化記録媒体に存する
。That is, the gist of the present invention is that in a medium provided on a substrate, a recording layer is not provided with a reflective layer, and the reflective layer is
M+-x (MF!, Ta + Tt + Zr +
At least one element selected from V rP t + Mo * Cr, X is 0. θ/~0.7! The present invention relates to a phase change recording medium characterized in that the phase change recording medium is formed by
（発明の構成） 以下、本発明を更に詳細に説明する。(Structure of the invention) The present invention will be explained in more detail below.
本発明による相変化形光記録媒体は、真空蒸着やスパッ
タリングなど通常の薄膜形成装置によシ作成される。The phase change optical recording medium according to the present invention is produced using a conventional thin film forming apparatus such as vacuum evaporation or sputtering.
基板としては、通常、ＰＭＭＡ＋Ｐｃ（ポリカーボネー
ト）のような低熱伝導性材料が該基板への熱の散逸を防
ぐ目的からみて望ましいが、ガラス基板など熱伝導性の
良いものを用いる場合は、基板上に感光性樹脂などの有
機物膜を形成する事により、熱の散逸を防ぐ事ができる
。For the substrate, it is usually desirable to use a low thermal conductivity material such as PMMA+Pc (polycarbonate) in order to prevent heat dissipation to the substrate, but when using a material with good thermal conductivity such as a glass substrate, it is preferable to By forming an organic film such as photosensitive resin, heat dissipation can be prevented.
基板の厚みは／〜２問程度が一般的であり、通常約へ２
鰭程度である。The thickness of the board is generally about 2 to 2, and is usually about 2 to 2.
It is about the size of a fin.
本発明においては基板上に記録層、反射層を順次設ける
。記録層としてはＧ ｅ Ｔ ｅ系、 ＩｎＳｂ系、
Ｔｃ０２系等が用いられる。記録層の膜厚は記録前、
記録後Ｑ屈折率、及び反射層の屈折率から最もコントラ
ストがとれるように最適化されるが、通常２０ＯＡ−ｔ
００＾である。本発明においては反射層としてＴａ ｌ
Ｔｔ ＃ Ｚｒ ｌ Ｖ ｒＰ Ｌ ＋ Ｍｏ ＋
Ｃｒから選ばれる一棟以上の元素を含有するＡ１合金を
用いる。添加金稙の含有廿は７〜７５８１％（原子％）
、さらに好ましくはコル１ＯａＬチである。好ましい６
ｊ加金属は上記のい範囲で選ばれるが、３θθ人〜！θ
θ八程度が好ましい。干渉効果をさらに強める為記録層
に接してその片面、または両面に高屈折率の誘電体を設
けることも効果的である。誘電体としては例えば、Ｚｎ
Ｓ ＋ Ｔａ２ｅｓ ＋ Ｓ ｔ ０２ ＋ Ｓ ｒ
ＯｒＺｒＯ２ｒ ５ｉｓＮ＋ ＋ ＡＩＮ等が用いられ
る。In the present invention, a recording layer and a reflective layer are sequentially provided on a substrate. The recording layer is G e Te system, InSb system,
Tc02 series etc. are used. The film thickness of the recording layer is before recording,
It is optimized to obtain the best contrast from the Q refractive index after recording and the refractive index of the reflective layer, but usually 20OA-t.
It is 00^. In the present invention, Ta l is used as the reflective layer.
Tt # Zr l V rP L + Mo +
An A1 alloy containing one or more elements selected from Cr is used. Additive metal content is 7-7581% (atomic%)
, more preferably Col1OaL. Preferable 6
The additive metal is selected within the above range, but 3θθ people ~! θ
A value of about θ8 is preferable. In order to further enhance the interference effect, it is also effective to provide a dielectric material with a high refractive index on one or both surfaces of the recording layer in contact with it. As the dielectric material, for example, Zn
S + Ta2es + S t 02 + S r
OrZrO2r 5isN+ + AIN etc. are used.
尚、誘電体を記録層の片面または両面に設ける場合は記
録層の膜厚は誘電体を含めた全体の干渉効果によって決
定される。Note that when a dielectric material is provided on one or both sides of the recording layer, the thickness of the recording layer is determined by the overall interference effect including the dielectric material.
（実施例）
以下、実施例に基づいて本発明を具体的に説明するが本
発明はその要旨を越えない限シ以下の実施例に限定され
ない。(Examples) Hereinafter, the present invention will be specifically explained based on Examples, but the present invention is not limited to the following Examples as long as the gist thereof is not exceeded.
実施例／
基板にはポリカーボネートのディスクを用いその上に［
１？スパツタリング法によｆ）、５ｉＯｚ層を／θＯ０
Ａ成験した。その上に記録層としてＧｃメタ−ゲット上
Ｔｅ、Ｂｉチ、プを配位してスパッタリングによシ形成
した。成膜速度は記録層の組成はＧｅ５ｏＴｅ＋ｏＢｉ
３であった。次に反 や削屑として、ＡＩメタ−ゲット
上Ｔａチップを配して３００ＡのＡＩとＴａ の合金を
成膜した。Example/ A polycarbonate disk is used as the substrate, and [
1? f), 5iOz layer /θO0 by sputtering method
I got an A. Thereon, a recording layer was formed by sputtering with Te, Bi, and Ti chips coordinated on the Gc metal get. The composition of the recording layer is Ge5oTe+oBi.
It was 3. Next, a Ta chip was placed on the AI metalget as scraps to form a 300A alloy of AI and Ta.
反射層中の′ｒａ量はＴａチップ数によって調整した。The amount of 'ra in the reflective layer was adjusted by the number of Ta chips.
また比較例としてＡＩのみの反射層を持つ同様のディス
クを作成した。Further, as a comparative example, a similar disc having a reflective layer made only of AI was prepared.
以上のように作成したディスクに／ｒ００Ｈ＞ｔｎ。/r00H>tn on the disk created as above.
Ｑ、ｊＭＩＩｚ ｄｕｔＹ ｊ ’％の条件で記録を
行なったところ、第１図のような結果を得た。なお、最
適記録パワーは二次歪Ｃ２とキャリアレベルＣの比Ｃ２
／ Ｃが最小になる記録パワーとした。When recording was carried out under the conditions of Q, jMIIz dutY j '%, the results shown in FIG. 1 were obtained. Note that the optimum recording power is the ratio C2 of the second-order distortion C2 and the carrier level C.
/C was set to the minimum recording power.
第１図から明らかなようにＡＩにＴ；Ｉを少量添加する
ことによシキャリアレベルを低下させずに感度を上げる
ことが可能である。As is clear from FIG. 1, by adding a small amount of T;I to AI, it is possible to increase the sensitivity without reducing the carrier level.
同様な効果はＡＩとＴａ以外にＡＩとＴ ｔ ｒ Ｚ
ｒ ＋Ｖ ｒ Ｐ ｔ ＋ Ｍｏ ＋ Ｃｒ等との合金
を用いた場合においても認められた。In addition to AI and Ta, similar effects can be found in AI and T r Z
This was also observed when alloys such as r + V r P t + Mo + Cr were used.
（発明の効果）
本発明による相変化記録媒体はＣ／Ｎ比、感度共に良好
な特性を示す。(Effects of the Invention) The phase change recording medium according to the invention exhibits good characteristics in both C/N ratio and sensitivity.
ど 図ｒ（＋ｒ ）ｔｎ１単す＝ ｔｉｔ第１図は反Ｉ
Ｊ−Ｊ膜中のＴ２１含有量と最適記録パワー及び、キャ
リアレベルの相関を示したものである。Do Figure r (+r ) tn1 unit = tit Figure 1 is anti-I
This figure shows the correlation between the T21 content in the JJ film, the optimum recording power, and the carrier level.
出 願 人 三菱化成工業株式会社 代 理 人 弁理士 長谷用 − （ほか７名）Sender: Mitsubishi Chemical Industries, Ltd. Representative Patent Attorney Hase - (7 others)
Claims (1)
化させて光反射率を変えることにより記録を行なう相変
化記録媒体において、記録層に反射層を設けてなり、該
反射層をＡｌ＿ｘＭ＿１＿−＿ｘ（ＭはＴａ、Ｔｉ、Ｚ
ｒ、Ｖ、Ｐｔ、Ｍｏ、Ｃｒから選ばれる少なくとも１種
の元素、ｘは０．０１〜０．１５の数）によって形成し
たことを特徴とする相変化記録媒体。(1) In a phase change recording medium in which recording is performed by thermally changing the crystal state of a recording layer provided on a substrate to change the optical reflectance, the recording layer is provided with a reflective layer, and the reflective layer Al_xM_1_-_x (M is Ta, Ti, Z
1. A phase change recording medium comprising at least one element selected from r, V, Pt, Mo, and Cr, where x is a number from 0.01 to 0.15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62326238A JPH087880B2 (en) | 1987-12-23 | 1987-12-23 | Phase change recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62326238A JPH087880B2 (en) | 1987-12-23 | 1987-12-23 | Phase change recording medium |
Related Child Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10300614A Division JPH11316978A (en) | 1998-10-22 | 1998-10-22 | Phase transition recording medium |
| JP10300612A Division JP3137093B2 (en) | 1998-10-22 | 1998-10-22 | Phase change recording medium |
| JP10300613A Division JPH11316977A (en) | 1998-10-22 | 1998-10-22 | Phase transition recording medium |
| JP10300611A Division JPH11316975A (en) | 1998-10-22 | 1998-10-22 | Phase transition recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01169751A true JPH01169751A (en) | 1989-07-05 |
| JPH087880B2 JPH087880B2 (en) | 1996-01-29 |
Family
ID=18185534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62326238A Expired - Lifetime JPH087880B2 (en) | 1987-12-23 | 1987-12-23 | Phase change recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH087880B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0254442A (en) * | 1988-08-19 | 1990-02-23 | Matsushita Electric Ind Co Ltd | Information carrier disk |
| JPH02267752A (en) * | 1989-04-07 | 1990-11-01 | Fuji Photo Film Co Ltd | Optical recording medium |
| JPH0414634A (en) * | 1990-05-07 | 1992-01-20 | Mitsubishi Kasei Corp | Reproduction exclusive optical disk |
| JPH0417670A (en) * | 1990-05-11 | 1992-01-22 | Kobe Steel Ltd | Smelted material of sputtering target for optical medium |
| JPH10142625A (en) * | 1996-11-07 | 1998-05-29 | Vacuum Metallurgical Co Ltd | Manufacture of liquid crystal display conductive part, and sputtering target used for manufacture thereof |
| US5976641A (en) * | 1991-03-07 | 1999-11-02 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
-
1987
- 1987-12-23 JP JP62326238A patent/JPH087880B2/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0254442A (en) * | 1988-08-19 | 1990-02-23 | Matsushita Electric Ind Co Ltd | Information carrier disk |
| JPH02267752A (en) * | 1989-04-07 | 1990-11-01 | Fuji Photo Film Co Ltd | Optical recording medium |
| JPH0414634A (en) * | 1990-05-07 | 1992-01-20 | Mitsubishi Kasei Corp | Reproduction exclusive optical disk |
| JPH0417670A (en) * | 1990-05-11 | 1992-01-22 | Kobe Steel Ltd | Smelted material of sputtering target for optical medium |
| US5976641A (en) * | 1991-03-07 | 1999-11-02 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
| US6206985B1 (en) | 1991-03-07 | 2001-03-27 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
| JPH10142625A (en) * | 1996-11-07 | 1998-05-29 | Vacuum Metallurgical Co Ltd | Manufacture of liquid crystal display conductive part, and sputtering target used for manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH087880B2 (en) | 1996-01-29 |
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