JPH01167272A - Thin film head substrate made of alumina base ceramic - Google Patents
Thin film head substrate made of alumina base ceramicInfo
- Publication number
- JPH01167272A JPH01167272A JP62327749A JP32774987A JPH01167272A JP H01167272 A JPH01167272 A JP H01167272A JP 62327749 A JP62327749 A JP 62327749A JP 32774987 A JP32774987 A JP 32774987A JP H01167272 A JPH01167272 A JP H01167272A
- Authority
- JP
- Japan
- Prior art keywords
- head substrate
- thin film
- film head
- cutting
- properties
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 24
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 239000010409 thin film Substances 0.000 title claims abstract description 13
- 239000000919 ceramic Substances 0.000 title claims description 21
- 239000000203 mixture Substances 0.000 claims abstract description 11
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims abstract description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 3
- FOZHTJJTSSSURD-UHFFFAOYSA-J titanium(4+);dicarbonate Chemical compound [Ti+4].[O-]C([O-])=O.[O-]C([O-])=O FOZHTJJTSSSURD-UHFFFAOYSA-J 0.000 claims abstract 2
- 238000005520 cutting process Methods 0.000 abstract description 21
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 10
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 239000000843 powder Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 7
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 238000001513 hot isostatic pressing Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、すぐれた切断加工性と鏡面研磨性を有する
アルミナ基セラミックスで製造された薄膜ヘッド基板に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film head substrate manufactured from alumina-based ceramics having excellent cutting workability and mirror polishability.
コンピュータ部記憶装置の読取り装置に組込まれている
薄膜ヘッドの構成部材の１つに基板かある。A substrate is one of the components of a thin film head incorporated in a reading device of a computer storage device.
この基板は、例えば直径： １００ｍｍＸ厚さ：５ｒ
ｎｍの寸法をもった円板状のアルミナ基セラミックス素
材を通常の粉末冶金法によって製造し、この素材を、例
えば横：４＋ｎｍＸ縦：６ｍｍＸ厚さ：２ｍｍのチップ
にダイヤモンド砥石を用いて切断加工し、このチップの
表面を鏡面研磨することによって製造されている。This board is, for example, diameter: 100mm x thickness: 5r.
A disc-shaped alumina-based ceramic material with dimensions of nm is manufactured by a normal powder metallurgy method, and this material is cut into a chip of, for example, width: 4 + nm x length: 6 mm x thickness: 2 mm using a diamond grindstone. , is manufactured by mirror polishing the surface of this chip.
また、この基板を構成するアルミナ基セラミックスの代
表的なものとして、特公昭８１．−５０９０６号公報記
載のものがあり、このアルミナ基セラミックスは、重量
％（以下％は重量％を示す）で、ＴｉＯ：１．５〜７．
５％、
Ｔ ｉ Ｃ： ２８．５〜４７．５％、を含有し、さら
に、
ＭｇＯ，ＮｉＯ，Ｃｒ２Ｏ３，およびＺ ｒ Ｏ２のう
ちの１種または２種以上＝０．５〜５％、を含有し、残
りか酸化アルミニウム（以下Ａρ２０３で示す）と不可
避不純物からなる組成をもつものである。In addition, as a representative alumina-based ceramic that constitutes this substrate, the special public patent publication 1981. -50906, and this alumina-based ceramic has a TiO content of 1.5 to 7.
5%, TiC: 28.5 to 47.5%, and further contains one or more of MgO, NiO, Cr2O3, and ZrO2 = 0.5 to 5%. The remainder consists of aluminum oxide (hereinafter referred to as Aρ203) and unavoidable impurities.
一方、近年、この種薄膜ヘッドの製造分野においても生
産性並びに性能の向上が強く要求されており、特にこれ
の構造部材である基板の製造に際して、その製造上多く
の時間を必要とする切断加工の短縮化と、鏡面研磨後の
表面粗さの向上が要望されている。On the other hand, in recent years, there has been a strong demand for improvements in productivity and performance in the field of manufacturing this type of thin film head, and in particular, when manufacturing the substrate, which is a structural member of this type, the cutting process that requires a lot of time is required. It is desired to shorten the time and improve the surface roughness after mirror polishing.
そこで、本発明者等は、上述のような観点から、上記の
特公昭６１−５０９０８号公報に記載される従来アルミ
ナ基セラミックス製薄膜ヘッド基板に着目し、これの切
断加工性と鏡面研磨性の一段の向上をはかるべく研究を
行なった結果、上記の従来アルミナ基セラミックスでは
、主成分がＴｉＯとＴｉＣとＡｇ２Ｏ３（ＭｇＯ１Ｎｉ
Ｏ１Ｃｒ ＯおよびＺ ｒ Ｏ２は焼結助剤）からな
２ ３ ′
す、かつそれぞれの硬さが、ビッカース硬さでＴ １０
２ ＋約１０００、ＴｉＣ＋約３０００、そしてＡｇ２
Ｏ３・約２０００であるように、硬度のあるものが混在
する組織をもつことに原因して、切断加工に際しては、
相対的に切断抵抗か高くなって、切断加工に長時間を要
するようになり、また鏡面研磨に際しても、相対的に軟
質のＴ ｚ Ｏ２部分が深く、硬質のＴｉＣやＡｇ２Ｏ
３の部分が浅く研磨される傾向となるため表面粘さの向
上が難しいと推察されるが、基板を構成するアルミナ基
セラミックスを、
炭窒化チタン（以下、ＴｉＣ０で示す）：２５〜４０％
、
を含有し、さらに、
酸化マグネシウム（以下、ＭｇＯで示す）、酸化イツト
リウム（以下、Ｙ２Ｏ３で示す）、および酸化ジルコニ
ウム（以下、Ｚ ｒ Ｏ２で示す）のうちの１種または
２種以上：０．５〜５％、を含有し、残りが八ρ２０３
と不可避不純物からなる組成をもつもので構成すると、
主成分がＴｉＣ０とＡ １１２０ ｇからなり、ビッカ
ース硬さでＴｉＣ０は約２０００〜２８００、Ａｇ２Ｏ
３は上記のように約２０００であるように相対的に同じ
硬さをもつ成分で構成されるようになることから、切断
加工性と鏡面研磨性が著しく向上するようになり、さら
にＴｉＣ０には磁気的性質を安定化させるほか、粒成長
を促進して切断加工性を一段と向上させる作用があると
いう知見を得たのである。Therefore, from the above-mentioned viewpoint, the present inventors focused on the conventional thin film head substrate made of alumina-based ceramics described in the above-mentioned Japanese Patent Publication No. 61-50908, and investigated its cutting workability and mirror polishability. As a result of research aimed at further improvement, we found that the main components of the above conventional alumina-based ceramics are TiO, TiC, and Ag2O3 (MgO1Ni).
O1CrO and ZrO2 are sintering aids), and each has a hardness of T10 in terms of Vickers hardness.
2 + about 1000, TiC + about 3000, and Ag2
Due to the structure having a mixture of hard materials such as O3・approximately 2000, during cutting,
The cutting resistance becomes relatively high, and the cutting process takes a long time.Also, during mirror polishing, the relatively soft T z O2 part is deep and hard TiC or Ag2O
It is presumed that it is difficult to improve the surface viscosity because the part 3 tends to be polished shallowly, but the alumina-based ceramic that makes up the substrate is made of titanium carbonitride (hereinafter referred to as TiC0): 25 to 40%.
, and further contains one or more of magnesium oxide (hereinafter referred to as MgO), yttrium oxide (hereinafter referred to as Y2O3), and zirconium oxide (hereinafter referred to as ZrO2): 0 Contains .5 to 5%, and the rest is 8ρ203
If it is composed of a material with a composition consisting of and unavoidable impurities,
The main components are TiC0 and A (1120 g), and the Vickers hardness of TiC0 is approximately 2000-2800, Ag2O
Since TiC0 is composed of components having relatively the same hardness, such as approximately 2000 as mentioned above, the cutting workability and mirror polishability are significantly improved. They found that in addition to stabilizing magnetic properties, it also promotes grain growth and further improves cutting workability.
この発明は上記知見にもとづいてなされたものであって
、
ＴｉＣ０：２５〜４０％、
を含有し、さらに、
ＭｇＯ，ＹＯおよびＺ ｒ Ｏ２のうちの１２ ３’
種または２種以上＝０．５〜５％、
を含有し、残りがＡｇ２Ｏ３と不可避不純物からなる組
成を有するアルミナ基セラミックスで構成された薄膜ヘ
ッド基板に特徴を有するものである。This invention was made based on the above knowledge, and contains TiC0: 25 to 40%, and further contains 123' or two or more of MgO, YO, and ZrO2 = 0.5 The thin film head substrate is made of an alumina-based ceramic having a composition of ~5%, with the remainder consisting of Ag2O3 and unavoidable impurities.
つぎに、この発明の基板を構成するアルミナ基セラミッ
クスの成分組成を上記の通りに限定した理由を説明する
。Next, the reason why the component composition of the alumina-based ceramic constituting the substrate of the present invention is limited as described above will be explained.
（ａ）ＴｉＣＯ
ＴｉＣＯには、上記のようにＡｇ２Ｏ３との関係で、切
断加工性と鏡面研磨性を向上させるほか、粒成長を促進
して一段の切断加工性の向上に寄与する作用があり、さ
らに磁気的性質を安定化する作用があるが、その含有量
が２５％未満では前記作用に所望の効果が得られず、一
方その含有量が４０％を越えると、基板の化学的性質が
不安定になることから、その含有量を２５〜４０％と定
めた。(a) TiCO As mentioned above, in relation to Ag2O3, TiCO not only improves cutting workability and mirror polishability, but also promotes grain growth and contributes to further improvement of cutting workability. Furthermore, it has the effect of stabilizing the magnetic properties, but if its content is less than 25%, the desired effect cannot be obtained, while if its content exceeds 40%, the chemical properties of the substrate will be impaired. The content was set at 25 to 40% for stability.
（ｂ） ＭｇＯ，Ｙ ＯおよびＺ ｒ Ｏ２２３″
これらの成分は、焼結助剤として働き、焼結性を向上さ
せてセラミックスの強度を向上させる作用があるが、そ
の含有量か０．５％未満では前記作用に所望の効果が得
られず、一方その含有量が５％を越えると、粒が異常成
長し易く、かつボアが生成し易くなることから、その含
有量を０．５〜５％と定めた。(b) MgO, Y O and Z r O223'' These components act as sintering aids and have the effect of improving sinterability and strength of ceramics, but their content is 0.5%. If the content is less than 5%, the desired effect cannot be obtained, while if the content exceeds 5%, grains tend to grow abnormally and bores are likely to be formed. %.
また、この発明のアルミナ基セラミックスは、原料粉末
として、ＴｉＣ０粉末、ＭｇＯ粉末、Ｙ Ｏ粉末、Ｚｒ
Ｏ粉末、およびＡｇ２Ｏ３粉末を用い、これら原料粉末
を所定の配合組成に配合し、通常の条件で混合し、圧粉
体にプレス成形した後、この圧粉体を、真空中で室温か
ら１２００℃まで昇温し、この時点で雰囲気を１気圧以
下の不活性ガスに切換えて１７５０〜１８５０℃の焼結
温度まで昇温し、この温度に１〜５時間保持の条件で焼
結し、ついでこの焼結体に、不活性ガス雰囲気中、圧力
＝１００〜２０００気圧、温度： １３５０〜１６００
℃の条件で熱間静水圧プレス（ＨＩ Ｐ）処理を施すこ
とによって製造することができる。In addition, the alumina-based ceramics of the present invention uses TiC0 powder, MgO powder, YO powder, Zr
Using O powder and Ag2O3 powder, these raw material powders are blended into a predetermined composition, mixed under normal conditions, press-molded into a green compact, and then heated from room temperature to 1200°C in vacuum. At this point, the atmosphere was changed to an inert gas of 1 atm or less, and the temperature was raised to a sintering temperature of 1750 to 1850°C. Sintering was carried out by maintaining this temperature for 1 to 5 hours. To the sintered body, in an inert gas atmosphere, pressure = 100 to 2000 atm, temperature: 1350 to 1600
It can be manufactured by hot isostatic pressing (HIP) treatment at ℃.
つぎに、この発明の薄膜ヘッド基板を実施例により具体
的に説明する。Next, the thin film head substrate of the present invention will be specifically explained using examples.
原料粉末として、平均粒径：１μｓを有するＴｉＣ０粉
末、同０．８ｕｆＩｌのＡΩ２０３粉末、同１１Ｅｒｌ
のＭｇＯ粉末、同１μｍのＹ２Ｏ３粉末およびＺ ｒ
Ｏ２粉末を用い、これら原料粉末をそれぞれ第１表に示
される配合組成に配合し、ボールミルで７２時間粉砕混
合した後、圧粉体にプレス成形し、この圧粉体に、真空
中で１２００℃まで昇温した後、雰囲気を１気圧のＡｒ
雰囲気に切換えて焼結温度である１７５０〜１８５０℃
の範囲内の所定温度に昇温し、同じ雰囲気中で前記焼結
温度に３時間保持の条件での焼結を施し、引続いてこの
結果の焼結体に、Ａｒガス雰囲気中、温度： １５００
℃、圧カニ １５００気圧、保持時間：１時間の条件で
ＨＩＰ処理を施すことにより実質的に配合組成と同一の
組成を有し、かつ寸法が直径： １１０ｍｍＸ厚さ・
５＋＋＋ｍの本発明アルミナ基セラミックス製薄膜ヘッ
ド基板素材（以下本発明セラミックス基板素材という）
１〜１５をそれぞれ製造した。As raw material powders, TiC0 powder with an average particle size of 1 μs, AΩ203 powder with an average particle size of 0.8ufIl, and 11Erl
MgO powder of 1 μm, Y2O3 powder of 1 μm and Z r
Using O2 powder, these raw material powders were blended into the composition shown in Table 1, pulverized and mixed in a ball mill for 72 hours, and then press-molded into a green compact. After increasing the temperature to 1 atm Ar
Switch to the atmosphere and set the sintering temperature to 1750-1850℃
The temperature was raised to a predetermined temperature within the range of , and sintered in the same atmosphere under the conditions of maintaining the sintering temperature for 3 hours, and then the resulting sintered body was heated in an Ar gas atmosphere at the temperature: 1500
By performing HIP treatment under the conditions of ℃, pressure crab 1500 atm, holding time: 1 hour, it has substantially the same composition as the blended composition, and the dimensions are diameter: 110 mm x thickness.
5+++m thin film head substrate material made of alumina-based ceramics of the present invention (hereinafter referred to as the ceramic substrate material of the present invention)
1 to 15 were produced, respectively.
また、比較の目的で、上記の原料粉末に加えて、平均粒
径：１茸のＴ ｔ Ｏ２粉末と同１μｓのＴｉＣ粉末を
用い、かつ第１表に示される配合組成とする以外は、実
質的に同一の条件で従来アルミナ基セラミックス製薄膜
ヘッド基板素材（以下従来セラミックス基板累月という
）１〜３をそれぞれ製造した。In addition, for the purpose of comparison, in addition to the above raw material powder, T t O2 powder with an average particle size of 1 mushroom and TiC powder with an average particle size of 1 μs were used, and the composition was as shown in Table 1. Conventional alumina-based ceramic thin film head substrate materials (hereinafter referred to as conventional ceramic substrate materials) 1 to 3 were manufactured under identical conditions.
つぎに、この結果得られた各種のセラミックス基板累月
（ごついて、切断加工性を評価する目的で、切断荷重＋
１ｋｇ、回転数＋ ６００Ｏｒ、ｐ、ｍ、、砥 石 ：
直径１００ｍｍＸ厚み０．５ｍｍの寸法を有する４００
ｍｅｓｈのダイヤモンド砥石、切断距離： １１０ｍ
ｍ、
の条件で定圧切断加工を行ない、切断に要した時間を測
定し、また鏡面研磨性を評価する目的で、粗加工：ダイ
ヤモンド１７０番のレジンボンド砥石使用、
中仕上げ加工・ダイヤモンド１０００番の砥粒を用い、
面圧： １５０ｇ／ｃ♂で２時間加工、仕上げ加工：
６０００番および１５０００番のダイヤモンド砥粒を
用い、いずれの場合も面圧： １５０ｇ／Ｃ♂で１時間
加工、
の条件で面加工を行ない、面粗度を測定した。なお面粗
度は、非接触３次元微細形状測定器を用い、スタイラス
先端径・ ０．５ｕｍＲのダイヤモンド使用、触針荷重
： ２０ｍｇの条件で行なった。これらの結果を第１表
に示した。Next, for the purpose of evaluating the various ceramic substrates obtained as a result (cutting load +
1kg, rotation speed + 600Or, p, m, whetstone:
400 with dimensions of 100mm diameter x 0.5mm thickness
Mesh diamond grindstone, cutting distance: 110m
A constant pressure cutting process was carried out under the conditions of , to measure the time required for cutting, and for the purpose of evaluating the mirror polishability, rough processing: using a diamond No. 170 resin bond grindstone, semi-finishing using a diamond No. 1000 grindstone. Using abrasive grains,
Surface pressure: 2 hours processing at 150g/c♂, finishing processing:
Surface roughness was measured using No. 6000 and No. 15000 diamond abrasive grains under the following conditions: surface pressure: 150 g/C♂ for 1 hour. The surface roughness was measured using a non-contact three-dimensional micro-shape measuring device, using a diamond stylus with a tip diameter of 0.5 umR, and a stylus load of 20 mg. These results are shown in Table 1.
第１表に示される結果から、本発明セラミックス基板素
拐１〜１５は、従来セラミックス基板累月１〜３に比し
て、切断時間か短かく、かつ面粗度が小さいので、−段
とすぐれた切断加工性と鏡面研磨性をもつことが明らか
である。From the results shown in Table 1, the ceramic substrates 1 to 15 of the present invention have a shorter cutting time and lower surface roughness than conventional ceramic substrates 1 to 3. It is clear that it has excellent cutting workability and mirror polishability.
上述のように、この発明の薄膜ヘッド基板は、切断加工
性と鏡面研磨性にすぐれたアルミナ基セラミックスで構
成されているので、その製造工程における切断加工の短
縮化に寄与し、かつ−段とすぐれた鏡面が得られるので
、性能向上もはかれるなど工業上有用な特性を有するの
である。As mentioned above, the thin film head substrate of the present invention is made of alumina-based ceramics with excellent cutting workability and mirror polishing properties, so it contributes to shortening the cutting process in the manufacturing process, and - Since an excellent mirror surface can be obtained, it has industrially useful properties such as improved performance.
Claims (1)
コニウムのうちの１種または２種以上：０．５〜５％、 を含有し、残りが酸化アルミニウムと不可避不純物から
なる組成（以上重量％）を有するアルミナ基セラミック
スで構成されたことを特徴とするアルミナ基セラミック
ス製薄膜ヘッド基板。(1) Contains titanium carbonate: 25-40%, one or more of magnesium oxide, yttrium oxide, and zirconium oxide: 0.5-5%, and the rest is aluminum oxide and unavoidable impurities. An alumina-based ceramic thin film head substrate characterized in that it is made of an alumina-based ceramic having a composition (the above weight %).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62327749A JP2513260B2 (en) | 1987-12-24 | 1987-12-24 | Alumina-based ceramic thin film head substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62327749A JP2513260B2 (en) | 1987-12-24 | 1987-12-24 | Alumina-based ceramic thin film head substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01167272A true JPH01167272A (en) | 1989-06-30 |
| JP2513260B2 JP2513260B2 (en) | 1996-07-03 |
Family
ID=18202552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62327749A Expired - Lifetime JP2513260B2 (en) | 1987-12-24 | 1987-12-24 | Alumina-based ceramic thin film head substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2513260B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006243044A (en) * | 2005-02-28 | 2006-09-14 | Central Res Inst Of Electric Power Ind | Multifunctional material having mirror finished surface |
| US8110516B2 (en) * | 2008-11-28 | 2012-02-07 | Tdk Corporation | Sintered body and production method thereof |
| US8173563B2 (en) * | 2008-11-28 | 2012-05-08 | Tdk Corporation | Sintered body and production method thereof |
-
1987
- 1987-12-24 JP JP62327749A patent/JP2513260B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006243044A (en) * | 2005-02-28 | 2006-09-14 | Central Res Inst Of Electric Power Ind | Multifunctional material having mirror finished surface |
| US8110516B2 (en) * | 2008-11-28 | 2012-02-07 | Tdk Corporation | Sintered body and production method thereof |
| US8173563B2 (en) * | 2008-11-28 | 2012-05-08 | Tdk Corporation | Sintered body and production method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2513260B2 (en) | 1996-07-03 |
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