JPH01163738A - Material for resist - Google Patents
Material for resistInfo
- Publication number
- JPH01163738A JPH01163738A JP32014687A JP32014687A JPH01163738A JP H01163738 A JPH01163738 A JP H01163738A JP 32014687 A JP32014687 A JP 32014687A JP 32014687 A JP32014687 A JP 32014687A JP H01163738 A JPH01163738 A JP H01163738A
- Authority
- JP
- Japan
- Prior art keywords
- molecular weight
- copolymer
- resist material
- methylstyrene
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 27
- 229920001577 copolymer Polymers 0.000 claims abstract description 33
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229920006158 high molecular weight polymer Polymers 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 abstract description 18
- 229920000642 polymer Polymers 0.000 abstract description 5
- 238000000059 patterning Methods 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
- G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
- G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
本発明はレジスト材料に係り、特に高感度且つ耐ドライ
エツチング性の優れたレジスト材料に関し、
高感度で耐ドライエツチング性を有し、しかも１、５
ｔｎａ以上の厚さに塗布しても現像時にクラック（割れ
）を生じない良好なレジスト材料を提供することを目的
とし、α−メチルスチレン・α−クロロアクリル酸メチ
ル共重合体高分子量ポリマーに、α−メチルスチレン・
α−クロロアクリル酸メチル共重合体低分子量ポリマー
を２ないし２０重量％混合してなることを構成とする。[Detailed Description of the Invention] [Summary] The present invention relates to a resist material, and particularly to a resist material having high sensitivity and excellent dry etching resistance.
The aim is to provide a good resist material that does not cause cracks during development even when applied to a thickness greater than tna. -Methylstyrene・
It is composed of a mixture of 2 to 20% by weight of a low molecular weight α-methyl chloroacrylate copolymer.
本発明はレジスト材料に係り、特に高感度且つ耐ドライ
エツチング性の優れたポジレジスト材料に関するもので
ある。The present invention relates to resist materials, and more particularly to positive resist materials with high sensitivity and excellent dry etching resistance.
ＩＣ，ＬＳＩ等の半導体装置を高集積化するにはレジス
トパターンの微細加工を行なうことが必須の要求であり
、サブミクロンオーダーの微細加工ができる電子ビーム
、Ｘ線、紫外線などの短波長高エネルギ線を使用したり
ソグラフィ技術が実用化されるようになってきた。電子
ビームを利用した微細加工においても、レジスト材料は
その精度を左右する最も重要な要素である。Microfabrication of resist patterns is an essential requirement for achieving high integration of semiconductor devices such as ICs and LSIs, and short-wavelength, high-energy rays such as electron beams, X-rays, and ultraviolet rays that can perform microfabrication on the submicron order are essential. The use of lines and lithography techniques have come into practical use. Even in microfabrication using electron beams, the resist material is the most important element that affects the accuracy.
微細加工の精度を向上させるためには後工程において良
好な性質を有すべく、高感度でしかも耐ドライエツチン
グ性を有するレジスト材料が要求される。In order to improve the accuracy of microfabrication, a resist material is required that has high sensitivity and dry etching resistance so as to have good properties in subsequent processes.
本発明者らは先に高感度でしかも耐ドライエツチング性
の優れたポジレジスト材料としてα−メチルスチレン・
α−クロロアクリル酸メチル、（ｌ≧３ 、ｍ＜７ 、
ｊ！＋ｍ＝１０ 、Ｍｗ≧３万）を開発した。しかしな
がら、例えば約１．５μ以上に厚く該レジスト材料を塗
布すると現像時にクラックが入りやすいという問題があ
った。The present inventors previously discovered α-methylstyrene as a positive resist material with high sensitivity and excellent dry etching resistance.
α-methyl chloroacrylate, (l≧3, m<7,
j! +m=10, Mw≧30,000). However, if the resist material is applied thickly, for example, about 1.5 μm or more, there is a problem that cracks are likely to occur during development.
本発明は高感度で耐ドライエツチング性を有し、しかも
１．５μ以上の厚さに塗布しても現像時にクランク（割
れ）を生じない良好なレジスト材料を提供することを目
的とする。An object of the present invention is to provide a good resist material which has high sensitivity and dry etching resistance, and which does not crack during development even when coated to a thickness of 1.5 microns or more.
上記問題点は本発明によればα−メチルスチレン・α−
クロロアクリル酸メチル共重合体高分子量ポリマーに、
（ｌ≧３２ｍ ＜ ７ 、ｌ ＋ ｍ ＝１０ ＋ Ｍ
ｗ≧３万）α−メチルスチレン・α−クロロアクリル酸
メチル共重合体低分子量ポリマーを２ないし２０重重量
混合してなることを特徴とするレジスト材料によって解
決される。According to the present invention, the above problem can be solved by using α-methylstyrene/α-
Methyl chloroacrylate copolymer high molecular weight polymer, (l≧32m<7, l+m=10+M
w≧30,000) The problem is solved by a resist material comprising a mixture of 2 to 20 by weight of a low molecular weight α-methylstyrene/α-methyl chloroacrylate copolymer.
本発明では高分子量が３万以上であり、前記低分子量が
５千以上３万未満であることがガラス転移温度が高分子
量ポリマーよりも４０〜５０℃低く、可塑化効果がある
ため好ましい。In the present invention, it is preferable that the high molecular weight is 30,000 or more, and the low molecular weight is 5,000 to 30,000, since the glass transition temperature is 40 to 50° C. lower than that of the high molecular weight polymer and there is a plasticizing effect.
本発明によれば前記α−メチルスチレン・α−クロロア
クリル酸メチル共重合体高分子量ポリマーに、該共重合
体高分子量ポリマーと同じ構造を有するα−メチルスチ
レン・α−クロロアクリル酸メチル共重合体低分子量ポ
リマーを２ないし２０重量％混合させることによってバ
ターニング特性を変えずしかも低ガラス転移温で可塑化
効果があるため現像時のクラック発生の低減がはかられ
、１．５μ以上の厚膜に対しても強い現像条件で現像す
ることができ１． Ｏｔｎａ膜厚時と同等な感度が得ら
れるものである。According to the present invention, in the α-methylstyrene/α-methyl chloroacrylate copolymer high molecular weight polymer, an α-methylstyrene/α-methyl chloroacrylate copolymer having the same structure as the copolymer high molecular weight polymer is added. By mixing 2 to 20% by weight of a molecular weight polymer, it does not change the buttering properties and has a plasticizing effect at a low glass transition temperature, which reduces the occurrence of cracks during development, resulting in a thick film of 1.5μ or more. It can be developed under strong development conditions even for 1. Sensitivity equivalent to that obtained with Otna film thickness can be obtained.
上記低分子量ポリマーが２重量％未満ではクランクが発
生し、２０重量％を超えると、若干高感度化はするが解
像性が悪くなり耐熱性も低下する。If the amount of the low molecular weight polymer is less than 2% by weight, cranking will occur, and if it exceeds 20% by weight, the sensitivity will be slightly increased but the resolution will deteriorate and the heat resistance will also decrease.
以下本発明の実施例を従来のレジストを使用した比較例
と共に説明する。Examples of the present invention will be described below along with comparative examples using conventional resists.
裏腹炎上
分子量（Ｍｗ）３万のα−メチルスチレン・α−クロロ
アクリル酸メチル共重合体（以下単に共重合体と記す）
に対し、分子量２万のα−メチルスチレン・α−クロロ
アクリル酸メチル共重合体を３重量％混合して、モノク
ロルベンゼン溶液とした。基板上に該溶液を２．０μの
厚さにスピンコード法により塗布した後、１８０℃の温
度で２０分間プリベークし、その後、２０ｋＶで電子ビ
ーム（ＥＢ）露光し、キシレンを用いて室温で約５分間
浸漬（ｄｉｐ）現像を行なった。その結果、感度Ｄ０は
１７μＣ／−であり、０．８ ｔｍラインアンドスペー
ス解像した。現像過程においてレジスト材料にはクラッ
クの発生はなかった。α-methylstyrene/α-methyl chloroacrylate copolymer (hereinafter simply referred to as copolymer) with a flame molecular weight (Mw) of 30,000
To this, 3% by weight of α-methylstyrene/α-methyl chloroacrylate copolymer having a molecular weight of 20,000 was mixed to prepare a monochlorobenzene solution. After applying the solution to a thickness of 2.0 μm on the substrate by a spin-coating method, it was prebaked at a temperature of 180° C. for 20 minutes, then exposed to an electron beam (EB) at 20 kV, and exposed to xylene at room temperature. Dip development was performed for 5 minutes. As a result, the sensitivity D0 was 17 μC/-, and 0.8 tm line and space resolution was achieved. No cracks occurred in the resist material during the development process.
１施１
分子量３万の上記共重合体に対し、分子量２万のα−メ
チルスチレン・α−クロロアクリル酸メチル共重合体を
２０重量％混合して、モノクロルベンゼン溶液とした。1 Application 1 The above copolymer having a molecular weight of 30,000 was mixed with 20% by weight of α-methylstyrene/α-methyl chloroacrylate copolymer having a molecular weight of 20,000 to prepare a monochlorobenzene solution.
基板上に該溶液を２．０卿の厚さにスピンコード法によ
り塗布した後、１８０℃の温度で２０分間プリベークし
、その後、２０ｋＶで電子ビーム（ＥＢ）露光し、実施
例１と同様現像を行なった。その結果、感度Ｄ”は１５
μＣ／ｄであり、０．８ Ｉｎｎラインアンドスペース
解像した。After applying the solution to a thickness of 2.0 μm on the substrate by a spin code method, it was prebaked at a temperature of 180° C. for 20 minutes, then exposed to electron beam (EB) at 20 kV, and developed in the same manner as in Example 1. I did it. As a result, the sensitivity D" is 15
μC/d and 0.8 Inn line and space resolution.
現像過程においてレジスト材料には実施例１と同様クラ
ンクの発生はなかった。Similar to Example 1, no cranking occurred in the resist material during the development process.
裏上斑主
分子１３万の上記共重合体に対し、分子量１万のα−メ
チルスチレン・α−クロロアクリル酸メチル共重合体を
３重量％混合して、モノクロルベンゼン溶液とした。基
板上に該溶液を２．０−の厚さにスピンコード法により
塗布した後、１８０℃の温度で２０分間プリベークし、
その後、２０ｋＶで電子ビーム（ＥＢ）露光し、上記実
施例と同様に現像を行なった。その結果、感度Ｄ″は１
７μＣ／ｃＪＡであり、０．８ ｔｓラインアンドスペ
ース解像した。現像過程においてレジスト材料には上記
実施例と同様にクラックの発生はなかった。Mottling on the back To the above copolymer having a main molecular weight of 130,000, 3% by weight of α-methylstyrene/α-methyl chloroacrylate copolymer having a molecular weight of 10,000 was mixed to prepare a monochlorobenzene solution. After applying the solution on the substrate to a thickness of 2.0 - by a spin code method, prebaking at a temperature of 180 ° C. for 20 minutes,
Thereafter, electron beam (EB) exposure was performed at 20 kV, and development was performed in the same manner as in the above example. As a result, the sensitivity D″ is 1
7 μC/cJA and 0.8 ts line and space resolution. During the development process, no cracks were generated in the resist material as in the above examples.
実施■↓
分子量３万の上記共重合体に対し、分子量５千のα−メ
チルスチレン・α−クロロアクリル酸メチル共重合体を
３重量％混合して、モノクロルベンゼン溶液とした。基
板上に該溶液を２． Ｏｎの厚さにスピンコード法によ
り塗布した後、１８０℃の温度で２０分間プリベークし
、その後、２０ｋＶで電子ビーム（Ｅ Ｂ）露光し、上
記と同様に現像を行なった。その結果、感度Ｄ＠は１７
μＣ／ｃｄであり、０．８μラインアンドスペース解像
した。現像過程においてレジスト材料にはクランクの発
生はなかった。Implementation ↓ 3% by weight of α-methylstyrene/α-methyl chloroacrylate copolymer with a molecular weight of 5,000 was mixed with the above copolymer having a molecular weight of 30,000 to prepare a monochlorobenzene solution. 2. Apply the solution on the substrate. After coating the film to a thickness of 100 nm by a spin code method, it was prebaked at a temperature of 180° C. for 20 minutes, then exposed to an electron beam (EB) at 20 kV, and developed in the same manner as above. As a result, the sensitivity D@ is 17
μC/cd, with 0.8μ line and space resolution. No cranking occurred in the resist material during the development process.
スｍ
分子量５．６万の上記共重合体に対し、分子量１万のα
−メチルスチレン・α−クロロアクリル酸メチル共重合
体を１０重量％混合してモノクロルベンゼン溶液とした
。基板上に該溶液を２． Ｏｎの厚さにスピンコード法
により塗布した後、１８０℃、２０分プリベークし、そ
の後、２０ｋＶで露光し、実施例１と同様に現像を行な
った。その結果、感度Ｄ０は１９μｃ／ａＪであり、０
．８μラインアンドスペース解像した。現像過程におい
てレジスト材料には上記実施例と同様にクランクの発生
はなかった。For the above copolymer with a molecular weight of 56,000, α with a molecular weight of 10,000
-Methylstyrene/α-methyl chloroacrylate copolymer was mixed at 10% by weight to prepare a monochlorobenzene solution. 2. Apply the solution on the substrate. After applying the film to a thickness of 100 nm using a spin code method, it was prebaked at 180° C. for 20 minutes, then exposed at 20 kV, and developed in the same manner as in Example 1. As a result, the sensitivity D0 was 19 μc/aJ, and 0
．． 8μ line and space resolution. During the development process, no cranking occurred in the resist material as in the above example.
実１１１１
分子量８，７万の上記共重合体に対し、分子量５千のα
−メチルスチレン・α−クロロアクリル酸メチル共重合
体を５重量％混合してモノクロルベンゼン溶液とした。Fruit 1111 For the above copolymer with a molecular weight of 8,7000, α with a molecular weight of 5,000
-Methylstyrene/α-methyl chloroacrylate copolymer was mixed in an amount of 5% by weight to prepare a monochlorobenzene solution.
基板上に該溶液を２． Ｏｔｓ厚にスピンコード法によ
り塗布後、１８０℃、２０分プリベークし、その後、２
０ｋＶでＥＢ露光し、実施例１と同様に現像を行なった
。感度Ｄ°は２８μＣ／ｃｄであり、０．８ ｕｎライ
ンアンドスペース解像した。現像過程においてレジスト
材料には上記実施例と同様にクラックの発生はなかった
。2. Apply the solution on the substrate. After applying it to Ots thickness by spin code method, pre-baking at 180℃ for 20 minutes, then 2
EB exposure was performed at 0 kV, and development was performed in the same manner as in Example 1. The sensitivity D° was 28 μC/cd, and 0.8 un line and space resolution was achieved. During the development process, no cracks were generated in the resist material as in the above examples.
実施土工
分子量３万の上記共重合体に対し、分子量１万のα−メ
チルスチレン・α−クロロアクリル酸メチル共重合体を
３０重量％混合してモノクロルベンゼン溶液とした。基
板上に該溶液を１．５ ｎ厚にスピンコードし、その後
１８０℃、２０分ブリベータ、そして２０ｋＶで（ＥＢ
）露光し、実施例１と同様に現像を行なった。その結果
、感度Ｄ”１６μＣ／ｃｄであるが、０．９ｐラインア
ンドスペースが解像限界であった。またパターニング後
１４０℃、２０分ポストベークを行なった結果、パター
ンだれか生じた。A monochlorobenzene solution was prepared by mixing 30% by weight of α-methylstyrene/α-methyl chloroacrylate copolymer with a molecular weight of 10,000 to the above copolymer having a molecular weight of 30,000. The solution was spin-coded onto a substrate to a thickness of 1.5 nm, followed by EB at 180 °C for 20 min, and at 20 kV (EB
) The film was exposed to light and developed in the same manner as in Example 1. As a result, the sensitivity D" was 16 .mu.C/cd, but the resolution limit was 0.9p line and space. Also, as a result of post-baking at 140.degree. C. for 20 minutes after patterning, some pattern was generated.
皇豊廻１
実施例１〜６の各々のレジスト材料を１．５−の厚さに
スピンコード法により基板に塗布し上記と同じ条件で評
価した結果、Ｄ’は１７μＣ／ｃｊ、０．６−ラインア
ンドスペース解像し、クラック発生もなかった。Koho-mawari 1 Each of the resist materials of Examples 1 to 6 was coated on a substrate to a thickness of 1.5 - by the spin code method and evaluated under the same conditions as above. As a result, D' was 17 μC/cj, 0.6 - Line and space resolution was achieved and no cracks occurred.
止較旦上
従来のレジスト材料である分子量３万のα−メチルスチ
レン・α−クロロアクリル酸メチル共重合体をモノクロ
ルベンゼン溶液として１．０−の厚さにスピンコードし
１８０℃、２０分プリベークした後、Ｅ、Ｂ、露光（２
０ｋＶ）Ｌ、、キシレン５分（室温）ｄｉｐ現像した。First, a conventional resist material, α-methylstyrene/α-methyl chloroacrylate copolymer with a molecular weight of 30,000, was spin-coded as a monochlorobenzene solution to a thickness of 1.0 mm, and prebaked at 180°C for 20 minutes. After that, E, B, exposure (2
Dip development was carried out in xylene for 5 minutes (room temperature).
Ｄ’１７μＣ／ｃｄであり、また０、 ３ ｔｎｓライ
ンアンドスペースが解像した。厚さが１．０−と薄いた
めクラック発生はなかった。D' was 17 μC/cd, and 0.3 tns line and space was resolved. Since the thickness was as thin as 1.0, no cracks occurred.
止較■１
前記レジスト材料を１．５−の厚さにスピンコート、前
記同条件でプリベーク、ＥＢ露光、現像した。Ｄ”１７
．ｃｒｃ／ｃ＋４であり、０．６−ラインアンドスペー
ス解像したが、クランクが発生していた。Comparison (1) The above resist material was spin-coated to a thickness of 1.5 mm, prebaked, exposed to EB, and developed under the same conditions as above. D”17
．． CRC/C+4, and 0.6-line and space resolution was performed, but cranks were observed.
またこの後１４０℃、２０分ポストベークしたがクラッ
クは発生しているもののパターンだれを生じなかった。Further, after this, post-baking was carried out at 140° C. for 20 minutes, but although cracks were generated, the pattern did not sag.
此ｌ■１１
前記レジスト材料を２．０趨の厚さにスピンコード、前
記同条件でプリベークＥＢ露光、現像した。11 The above resist material was subjected to spin code, pre-baked EB exposure and development under the same conditions as above to a thickness of 2.0 mm.
Ｄ＠１７μＣ／−であり、０．８−ラインアンドスペー
スが解像したが、クラックが多数発生していた。D@17μC/-, and 0.8-line and space was resolved, but many cracks were generated.
止較炭↓
分子量５．６万の上記共重合体を２．０声厚にスピンコ
ード、前記同条件でプリベーク、ＥＢ露光、現像した。The copolymer having a molecular weight of 56,000 was spin-coded to a thickness of 2.0, prebaked under the same conditions as described above, exposed to EB, and developed.
感度Ｄ０３０μＣ／ｃ＋Ｊであり、０．８趨ラインアン
ドスペースが解像したが、クランクが多数発生した。The sensitivity was D030μC/c+J, and 0.8 lines and spaces were resolved, but many cranks occurred.
止較聞工
分子量８．７万の上記共重合体を２． Ｏｎ厚にスピン
コード、前記同条件でプリベーク、ＥＢ露光、現像した
。感度Ｄ”２８／！ｊｃ／ｃｄであり、０．８趨ライン
アンドスペースが解像したもののクラックが多数発生し
た。2. The above copolymer with a molecular weight of 87,000 at a molecular weight of 87,000. Prebaking, EB exposure, and development were performed under the same conditions as described above using a spin code to give an ON thickness. The sensitivity D was 28/!jc/cd, and although 0.8 line and space was resolved, many cracks occurred.
以上説明したように本発明によれば高分子量共重合体と
同種共重合体の低ガラス転移温度の低分子量ポリマーを
混合することによって１．５−以上の厚膜に対しても感
度を落すことなく、しかもクランクなくパターニングで
きる。これはＩＣ工程上、スルーブツト、歩留りを向上
させる。As explained above, according to the present invention, by mixing a high molecular weight copolymer with a low molecular weight polymer having a low glass transition temperature of the same type of copolymer, the sensitivity can be reduced even for thick films of 1.5- or more. Moreover, patterning can be done without cranking. This improves throughput and yield in the IC process.
また同系列共重合体混合は、相溶性もよく、バターニン
グ特性も類似なので解像性も落ちない。Furthermore, since the same series of copolymers have good compatibility and similar buttering properties, resolution does not deteriorate.
Claims (1)
共重合体高分子量ポリマーに、α−メチルスチレン・α
−クロロアクリル酸メチル共重合体低分子量ポリマーを
２ないし２０重量％混合してなることを特徴とするレジ
スト材料。 ２、前記高分子量が３万以上であり、前記低分子量が５
千以上３万未満であることを特徴とする特許請求の範囲
第１項記載のレジスト材料。[Claims] 1. α-methylstyrene/α-methyl chloroacrylate copolymer High molecular weight polymer, α-methylstyrene/α
- A resist material comprising 2 to 20% by weight of a low molecular weight methyl chloroacrylate copolymer. 2. The high molecular weight is 30,000 or more, and the low molecular weight is 50,000 or more.
The resist material according to claim 1, wherein the resist material has a molecular weight of 1,000 or more and less than 30,000.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62320146A JP2584806B2 (en) | 1987-12-19 | 1987-12-19 | Resist material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62320146A JP2584806B2 (en) | 1987-12-19 | 1987-12-19 | Resist material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01163738A true JPH01163738A (en) | 1989-06-28 |
| JP2584806B2 JP2584806B2 (en) | 1997-02-26 |
Family
ID=18118221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62320146A Expired - Lifetime JP2584806B2 (en) | 1987-12-19 | 1987-12-19 | Resist material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2584806B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1130863A (en) * | 1997-07-09 | 1999-02-02 | Nec Corp | Resist material and resist pattern forming method using the same |
| US20190056664A1 (en) * | 2016-01-29 | 2019-02-21 | Zeon Corporation | Polymer, positive resist composition, and method of forming resist pattern |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5441719A (en) * | 1977-09-08 | 1979-04-03 | Cho Lsi Gijutsu Kenkyu Kumiai | Radiation sensitive material |
| JPS60257445A (en) * | 1984-06-01 | 1985-12-19 | Kuraray Co Ltd | Positive type rediation resist material |
| JPS6279446A (en) * | 1985-10-03 | 1987-04-11 | Kuraray Co Ltd | Crosslinkable copolymer and positive type resist composed of its copolymer |
-
1987
- 1987-12-19 JP JP62320146A patent/JP2584806B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5441719A (en) * | 1977-09-08 | 1979-04-03 | Cho Lsi Gijutsu Kenkyu Kumiai | Radiation sensitive material |
| JPS60257445A (en) * | 1984-06-01 | 1985-12-19 | Kuraray Co Ltd | Positive type rediation resist material |
| JPS6279446A (en) * | 1985-10-03 | 1987-04-11 | Kuraray Co Ltd | Crosslinkable copolymer and positive type resist composed of its copolymer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1130863A (en) * | 1997-07-09 | 1999-02-02 | Nec Corp | Resist material and resist pattern forming method using the same |
| US20190056664A1 (en) * | 2016-01-29 | 2019-02-21 | Zeon Corporation | Polymer, positive resist composition, and method of forming resist pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2584806B2 (en) | 1997-02-26 |
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